CN109891573B - 静电夹持的边缘环 - Google Patents

静电夹持的边缘环 Download PDF

Info

Publication number
CN109891573B
CN109891573B CN201780065764.0A CN201780065764A CN109891573B CN 109891573 B CN109891573 B CN 109891573B CN 201780065764 A CN201780065764 A CN 201780065764A CN 109891573 B CN109891573 B CN 109891573B
Authority
CN
China
Prior art keywords
ring
edge
elastomeric
edge ring
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780065764.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN109891573A (zh
Inventor
克里斯托弗·金博尔
基思·加夫
王峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN202410348616.1A priority Critical patent/CN118248613A/zh
Publication of CN109891573A publication Critical patent/CN109891573A/zh
Application granted granted Critical
Publication of CN109891573B publication Critical patent/CN109891573B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Magnetic Record Carriers (AREA)
  • Iron Core Of Rotating Electric Machines (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CN201780065764.0A 2016-11-03 2017-10-19 静电夹持的边缘环 Active CN109891573B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410348616.1A CN118248613A (zh) 2016-11-03 2017-10-19 静电夹持的边缘环

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/343,010 US9922857B1 (en) 2016-11-03 2016-11-03 Electrostatically clamped edge ring
US15/343,010 2016-11-03
PCT/US2017/057450 WO2018085054A2 (en) 2016-11-03 2017-10-19 Electrostatically clamped edge ring

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202410348616.1A Division CN118248613A (zh) 2016-11-03 2017-10-19 静电夹持的边缘环

Publications (2)

Publication Number Publication Date
CN109891573A CN109891573A (zh) 2019-06-14
CN109891573B true CN109891573B (zh) 2024-04-16

Family

ID=61598561

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201780065764.0A Active CN109891573B (zh) 2016-11-03 2017-10-19 静电夹持的边缘环
CN202410348616.1A Pending CN118248613A (zh) 2016-11-03 2017-10-19 静电夹持的边缘环

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202410348616.1A Pending CN118248613A (zh) 2016-11-03 2017-10-19 静电夹持的边缘环

Country Status (6)

Country Link
US (3) US9922857B1 (https=)
JP (2) JP7200101B2 (https=)
KR (3) KR20190067928A (https=)
CN (2) CN109891573B (https=)
TW (2) TWI870995B (https=)
WO (1) WO2018085054A2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
JP6861579B2 (ja) * 2017-06-02 2021-04-21 東京エレクトロン株式会社 プラズマ処理装置、静電吸着方法および静電吸着プログラム
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
US11201079B2 (en) * 2018-05-30 2021-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer chuck
CN113439330A (zh) * 2019-02-12 2021-09-24 朗姆研究公司 具有陶瓷单体的静电卡盘
JP7340938B2 (ja) * 2019-02-25 2023-09-08 東京エレクトロン株式会社 載置台及び基板処理装置
JP2021027152A (ja) * 2019-08-05 2021-02-22 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
CN114556514B (zh) * 2019-10-10 2025-07-29 株式会社日立高新技术 试样支架、膜间距离调整机构以及带电粒子束装置
KR102697630B1 (ko) 2019-10-15 2024-08-23 삼성전자주식회사 식각 장치
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
JP7361588B2 (ja) * 2019-12-16 2023-10-16 東京エレクトロン株式会社 エッジリング及び基板処理装置
JP7308767B2 (ja) * 2020-01-08 2023-07-14 東京エレクトロン株式会社 載置台およびプラズマ処理装置
JP7667165B2 (ja) * 2020-02-04 2025-04-22 ラム リサーチ コーポレーション 基板処理用の静電エッジリング取り付けシステム
US11551916B2 (en) * 2020-03-20 2023-01-10 Applied Materials, Inc. Sheath and temperature control of a process kit in a substrate processing chamber
JP7454976B2 (ja) * 2020-03-24 2024-03-25 東京エレクトロン株式会社 基板支持台、プラズマ処理システム及びエッジリングの交換方法
JP7754833B2 (ja) * 2020-04-02 2025-10-15 ラム リサーチ コーポレーション 一体型シールを備える冷却エッジリング
US11728203B2 (en) 2020-10-13 2023-08-15 Canon Kabushiki Kaisha Chuck assembly, planarization process, apparatus and method of manufacturing an article
KR102744850B1 (ko) * 2022-08-10 2024-12-19 솔믹스 주식회사 포커스 링 및 이를 포함하는 플라즈마 식각장치
JPWO2024071073A1 (https=) * 2022-09-30 2024-04-04
KR102806976B1 (ko) * 2023-02-14 2025-05-15 주식회사 에프엑스티 채널이 형성된 탄화규소 링 및 그 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029610A1 (en) * 1997-01-02 2003-02-13 Cvc Products, Inc. Thermally conductive chuck for vacuum processor
JP2011508422A (ja) * 2007-12-19 2011-03-10 ラム リサーチ コーポレーション プラズマ処理装置用の複合シャワーヘッド電極組立体
CN104616957A (zh) * 2013-11-01 2015-05-13 松下知识产权经营株式会社 等离子处理装置以及等离子处理方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
DE69929055T2 (de) * 1998-05-01 2006-07-20 Duramed Pharmaceuticals Inc., Cincinnati Verfahren zur spritzgussherstellung von vorrichtungen mit kontrollierter wirkstofffreisetzung und damit hergestellte vorrichtung
JP4151749B2 (ja) 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
CN101303998B (zh) * 2003-04-24 2011-02-02 东京毅力科创株式会社 等离子体处理装置、聚焦环和基座
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP4402526B2 (ja) * 2004-06-22 2010-01-20 シンクレイヤ株式会社 電気機器の筐体
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
JP4753888B2 (ja) * 2007-01-15 2011-08-24 東京エレクトロン株式会社 基板保持機構及びプラズマ処理装置
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
JP5642531B2 (ja) 2010-12-22 2014-12-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
JP6689020B2 (ja) 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
JP2015201593A (ja) * 2014-04-10 2015-11-12 カヤバ工業株式会社 シール構造
JP6375679B2 (ja) 2014-04-24 2018-08-22 富士通株式会社 サーバ情報管理装置，サーバ情報管理プログラム，及びサーバ情報管理方法
KR102401501B1 (ko) * 2014-12-19 2022-05-23 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 챔버를 위한 에지 링
US10280121B2 (en) 2015-03-31 2019-05-07 Hokuriku Seikei Industrial Co., Ltd. Silicon carbide member for plasma processing apparatus
JP2017126727A (ja) * 2016-01-15 2017-07-20 東京エレクトロン株式会社 載置台の構造及び半導体処理装置
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
JP7667165B2 (ja) * 2020-02-04 2025-04-22 ラム リサーチ コーポレーション 基板処理用の静電エッジリング取り付けシステム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029610A1 (en) * 1997-01-02 2003-02-13 Cvc Products, Inc. Thermally conductive chuck for vacuum processor
JP2011508422A (ja) * 2007-12-19 2011-03-10 ラム リサーチ コーポレーション プラズマ処理装置用の複合シャワーヘッド電極組立体
CN104616957A (zh) * 2013-11-01 2015-05-13 松下知识产权经营株式会社 等离子处理装置以及等离子处理方法

Also Published As

Publication number Publication date
US9922857B1 (en) 2018-03-20
CN109891573A (zh) 2019-06-14
KR102840767B1 (ko) 2025-07-30
TWI816646B (zh) 2023-10-01
JP2023036780A (ja) 2023-03-14
US11935776B2 (en) 2024-03-19
TW201826316A (zh) 2018-07-16
TWI870995B (zh) 2025-01-21
JP7200101B2 (ja) 2023-01-06
CN118248613A (zh) 2024-06-25
KR20190067928A (ko) 2019-06-17
US20210166965A1 (en) 2021-06-03
KR20250120443A (ko) 2025-08-08
US10923380B2 (en) 2021-02-16
WO2018085054A2 (en) 2018-05-11
WO2018085054A3 (en) 2018-07-26
TW202349431A (zh) 2023-12-16
JP7455182B2 (ja) 2024-03-25
KR20230065355A (ko) 2023-05-11
JP2019534571A (ja) 2019-11-28
US20180166312A1 (en) 2018-06-14

Similar Documents

Publication Publication Date Title
CN109891573B (zh) 静电夹持的边缘环
US11551916B2 (en) Sheath and temperature control of a process kit in a substrate processing chamber
US12300473B2 (en) Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
JP7586617B2 (ja) 載置台
KR100893956B1 (ko) 반도체 처리용 포커스링 및 플라즈마 처리 장치
US20210066052A1 (en) Plasma processing apparatus
US11894255B2 (en) Sheath and temperature control of process kit
KR20170116195A (ko) 분리가능한 고 저항률 가스 분배 플레이트를 갖는 샤워헤드
CN110246740B (zh) 被处理体的载置装置和处理装置
CN101807509A (zh) 等离子体处理装置和聚焦环
JP7145041B2 (ja) 基板支持器、プラズマ処理装置、及びフォーカスリング
WO2019244631A1 (ja) 載置台及び基板処理装置
CN108475633A (zh) 等离子体处理装置
US12283465B2 (en) Plasma processing apparatus and plasma processing method
CN111354672A (zh) 静电卡盘及等离子体加工装置
KR20220134686A (ko) 기판 프로세싱을 위한 정전 에지 링 장착 시스템
JP2023002987A (ja) 基板支持器、プラズマ処理装置、及びエッジリング

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant