CN109887891B - 封装结构及其形成方法 - Google Patents

封装结构及其形成方法 Download PDF

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Publication number
CN109887891B
CN109887891B CN201910174141.8A CN201910174141A CN109887891B CN 109887891 B CN109887891 B CN 109887891B CN 201910174141 A CN201910174141 A CN 201910174141A CN 109887891 B CN109887891 B CN 109887891B
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cover plate
chip
layer
substrate
plate layer
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CN109887891A (zh
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刘者
黄柏荣
王宏杰
陈传兴
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Suzhou Tongfu Chaowei Semiconductor Co ltd
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Suzhou Tongfu Chaowei Semiconductor Co ltd
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Priority to US16/809,580 priority patent/US11450732B2/en
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Abstract

一种封装结构及其形成方法，封装结构包括：基板；位于基板部分表面的芯片；位于芯片顶部表面的金属导热层；位于芯片周围的基板的表面的电容结构，且电容结构和所述芯片相互分立；盖板结构，盖板结构包括第一盖板层和与第一盖板层连接的第二盖板层，第一盖板层中具有贯穿第一盖板层的第一开口，第二盖板层位于第一盖板层的底部且与第一盖板层垂直，第二盖板层环绕第一开口，第一盖板层位于电容结构上，所述芯片位于第一开口中，第二盖板层位于电容结构和芯片之间且与基板固定。所述封装结构的性能得到提高。

Description

封装结构及其形成方法
技术领域
本发明涉及半导体制造领域，尤其涉及一种封装结构及其形成方法。
背景技术
BGA(ball grid Array)封装产品是一种重要的电子封装产品。BGA(ball gridArray)封装产品的组成部分包括：带有芯片的基板，基板底部具有焊球。带有芯片的基板需要和母板通过焊球焊接在一起。所述BGA封装产品还包括散热盖，所述散热盖用于为BGA封装产品在工作的过程中产生的热量散发至外界环境。
然而，现有的BGA封装产品的性能较差。
发明内容
本发明解决的问题是提供一种封装结构及其形成方法，以提高封装结构的性能。
为解决上述问题，本发明提供一种封装结构，包括：基板；位于所述基板部分表面的芯片；位于所述芯片顶部表面的金属导热层；位于芯片周围的基板的表面的电容结构，且所述电容结构和所述芯片相互分立；盖板结构，所述盖板结构包括第一盖板层和与第一盖板层连接的第二盖板层，第一盖板层中具有贯穿第一盖板层的第一开口，第二盖板层位于第一盖板层的底部且与第一盖板层垂直，第二盖板层环绕第一开口，第一盖板层位于电容结构上，所述芯片位于第一开口中，第二盖板层位于所述电容结构和芯片之间且与基板固定。
可选的，所述盖板结构的材料为玻璃、橡胶、塑料或树脂。
可选的，所述盖板结构的材料为金属；所述盖板结构的表面还具有绝缘隔离层。
可选的，所述芯片投影至所述基板表面的形状呈矩形或正方形，所述芯片投影至所述基板的形状具有第一芯片边以及第二芯片边，第一芯片边与第二芯片边垂直；所述第一盖板层投影至所述基板表面的形状呈矩形环或方形环，所述第一盖板层投影至所述基板表面的形状具有内环和外环，所述内环具有第一盖板内边和第二盖板内边，第一盖板内边与第二盖板内边垂直，所述外环具有第一盖板外边和第二盖板外边，第一盖板外边与第二盖板外边垂直；所述电容结构投影在所述基板表面的形状呈矩形或正方形，所述电容结构投影在所述基板表面的形状具有第一电容边和第二电容边；第一电容边、第一盖板外边、第一盖板内边和第一芯片边彼此平行，第二电容边、第二盖板外边、第二盖板内边和第二芯片边彼此平行；所述第一盖板内边的尺寸等于第一芯片边的尺寸与2倍的第一最大位置误差之和；所述第二盖板内边的尺寸等于第二芯片边的尺寸与2倍的第二最大位置误差之和；第一盖板外边的尺寸等于第一芯片边的尺寸、第一电容边的尺寸与2倍的第一最大位置误差之和；第一电容边的尺寸等于第二芯片边的尺寸、第二电容边的尺寸与2倍的第二最大位置误差之和；所述第一最大位置误差为0.03mm～0.05mm，所述第二最大位置误差为0.03mm～0.05mm。
可选的，第一盖板层至电容结构顶部表面之间的距离大于第三最大位置误差，第三最大位置误差为0.05mm～0.1mm。
可选的，所述第一盖板层的上表面低于所述金属导热层的上表面。
可选的，还包括：位于所述第二盖板层底部和基板之间的封胶层。
可选的，所述封胶层的宽度小于第一最大位置误差，所述第一最大位置误差为0.03mm～0.05mm。
本发明还提供一种封装结构的形成方法，包括：提供基板，所述基板的部分表面具有芯片，所述基板的表面还具有位于芯片周围的电容结构，所述电容结构和所述芯片相互分立；提供盖板结构，所述盖板结构包括第一盖板层和与第一盖板层连接的第二盖板层，第一盖板层中具有贯穿第一盖板层的第一开口，第二盖板层位于第一盖板层的底部且与第一盖板层垂直，第二盖板层环绕第一开口；将所述盖板结构置于基板上，第一盖板层位于电容结构上，所述芯片位于第一开口中，第二盖板层位于所述电容结构和芯片之间且与基板固定；将所述盖板结构置于基板上后，在所述芯片的顶部表面形成金属导热层；形成所述金属导热层后，进行高温回流焊，所述高温回流焊采用的温度大于所述金属导热层的熔点。
可选的，所述高温回流焊包括第一高温回流焊工艺和第二高温回流焊工艺；所述封装结构的形成方法还包括：提供散热盖，将所述散热盖置于所述基板上，所述散热盖围成的空间容纳所述芯片、金属导热层、电容结构和盖板结构；将所述散热盖置于所述基板上后，采用第一高温回流焊工艺将散热盖、芯片与金属导热层焊接在一起；进行第一高温回流焊工艺后，采用第二高温回流焊工艺将焊球焊接在基板底部。
与现有技术相比，本发明的技术方案具有以下优点：
本发明技术方案提供的封装结构中，包括盖板结构，所述盖板结构包括第一盖板层和与第一盖板层连接的第二盖板层，第一盖板层中具有贯穿第一盖板层的第一开口，第二盖板层位于第一盖板层的底部且与第一盖板层垂直，第二盖板层环绕第一开口，第一盖板层位于电容结构上，所述芯片位于第一开口中，第二盖板层位于所述电容结构和芯片之间且与基板固定。第一盖板层将电容结构的顶部保护，第二盖板层将电容结构朝向芯片一侧的侧面保护。且由于第一盖板层和第二盖板层均呈环状结构，且各电容结构上的第一盖板层连接在一起，各电容结构侧部的第二盖板层连接在一起，这样盖板结构在高温回流焊中不容易发生变形，即使盖板结构在高温回流焊中有一定的变形，也可以将电容结构和金属导热层完全隔离开。因此盖板结构在高温回流焊中不会暴露出电容结构，避免金属导热层的材料喷溅在电容结构的表面。综上，提高了封装结构的性能。
附图说明
图1是一种封装结构的结构示意图；
图2至图14是本发明一实施例中封装结构形成过程的结构示意图。
具体实施方式
正如背景技术所述，现有的封装结构的性能较差。
一种封装结构，请参考图1，包括：基板100；位于所述基板100部分表面的芯片110；位于所述芯片110顶部表面的金属导热层120；位于基板100表面的若干分立的电容结构130，电容结构130和芯片110相互分立；位于所述基板100上的散热盖140，所述散热盖140围成的空间容纳所述芯片110、金属导热层120和电容结构130；位于所述基板100底部的焊球150。
需要采用高温回流焊工艺将散热盖140与金属导热层120焊接在一起，在焊接散热盖140与金属导热层120的过程中，金属导热层120发生喷溅，金属导热层120的材料容易喷溅在电容结构130的表面。需要采用高温回流焊工艺将焊球150与基板100的底部连接在一起，焊球150的材料一般为锡，所述金属导热层120的材料一般为铟，锡的熔点大于铟的熔点。因此，在将焊球150焊接至基板100的底部时采用的高温回流焊中，金属导热层120承受不了高温回流焊的温度，导致金属导热层120的材料发生喷溅，金属导热层120的材料容易喷溅在电容结构130的表面。金属导热层120的材料容易喷溅在电容结构130的表面，会导致电容结构130表面的焊锡短路失效。
为了避免金属导热层120的材料直接喷溅在电容结构130的表面，一种方法为：在进行上述的高温回流焊工艺之前，在电容结构130的表面覆盖胶层，所述胶层的材料包括UV固化胶。然而胶层也容易在高温回流焊工艺中对电容结构的保护失效，具体表现在：在高温回流焊工艺中，电容结构130底部残余的气体和助焊剂会膨胀，造成胶层的保护失效，胶层发生形变而暴露出电容结构130，金属导热层120的材料还是会喷溅在电容结构130表面。即使胶层采用耐高温的材料，也无法避免此问题。
在此基础上，本发明提供一种封装结构，包括：基板；位于所述基板部分表面的芯片；位于所述芯片顶部表面的金属导热层；位于芯片周围的基板的表面的电容结构，且所述电容结构和所述芯片相互分立；盖板结构，所述盖板结构包括第一盖板层和与第一盖板层连接的第二盖板层，第一盖板层中具有贯穿第一盖板层的第一开口，第二盖板层位于第一盖板层的底部且与第一盖板层垂直，第二盖板层环绕第一开口，第一盖板层位于电容结构上，所述芯片位于第一开口中，第二盖板层位于所述电容结构和芯片之间且与基板固定。所述封装结构的性能得到提高。
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施例做详细的说明。
图2至图14是本发明一实施例中封装结构形成过程的结构示意图。
结合参考图2和图3，图3为图2的俯视图，图2为沿图3中切割线A-A1的剖面图，提供基板200，所述基板200的部分表面具有芯片210，所述基板200的表面还具有位于芯片210周围的电容结构230，所述电容结构230和所述芯片210相互分立。
所述芯片210和所述电容结构230位于所述基板200的同一侧表面。
所述电容结构230的个数为若干个。
参考图4，提供盖板结构300，所述盖板结构300包括第一盖板层310和与第一盖板层310连接的第二盖板层320，第一盖板层310中具有贯穿第一盖板层310的第一开口301，第二盖板层320位于第一盖板层310的底部且与第一盖板层310垂直，第二盖板层320环绕第一开口301。
在一个实施例中，所述盖板结构300的材料为玻璃、橡胶或树脂。
在另一个实施例中，所述盖板结构300的材料为金属，所述盖板结构300的表面还具有绝缘隔离层(未图示)。
所述绝缘隔离层的作用包括：避免电容结构230表面的焊锡与盖板结构300接触导致短路。
所述绝缘隔离层的材料包括阳极氧化膜、化学气相沉积镀层、物理气相沉积镀层或油墨。在一个具体的实施例中，所述绝缘隔离层的材料为氮化铬。
当盖板结构300的材料为金属时，所述阳极氧化膜是采用阳极氧化工艺氧化盖板结构300表面而形成的。
结合参考图5和图6，图5为在图2基础上的示意图，图6为在图3基础上的示意图，且图5为沿图6中切割线A-A1的剖面图，在芯片210和电容结构230之间的基板200表面形成封胶层240，所述封胶层240呈环状结构，所述封胶层240分别与芯片210和电容结构230相互分立。
所述封胶层240的材料包括硅胶。
结合参考图7和图8，图7为在图5基础上的示意图，图8为在图6基础上的示意图，且图7为沿图8中切割线A-A1的剖面图，将所述盖板结构300置于基板200上，第一盖板层310位于电容结构230上，所述芯片210位于第一开口301中，第二盖板层320位于所述电容结构230和芯片210之间且与基板200固定。
具体的，将所述第二盖板层320放置于封胶层240上，所述封胶层240将第二盖板层320与位于电容结构230和芯片210之间的基板200固定。
所述第二盖板层320垂直于基板200的表面。
所述第二盖板层320环绕所述芯片210。
所述盖板结构300与电容结构分立，且盖板结构300与所述芯片分立。
结合参考图9和图10，图9为在图7基础上的示意图，图10为在图8基础上的示意图，将所述盖板结构300置于基板200上后，在所述芯片210的顶部表面形成金属导热层250。
所述金属导热层250的作用包括：将芯片210在工作时产生的热量传导至散热盖。
所述金属导热层250的材料为铟、铟合金、锡合金或银合金，选择这些材料的好处包括：业界导热性能优越的散热材料为铟、铟合金、錫合金或银合金。
所述金属导热层250的材料为铟、铟合金、锡合金或银合金。
所述芯片210的顶部表面具有第一镀金层，形成金属导热层250后，金属导热层250位于第一镀金层上，且金属导热层250与第一镀金层接触。
结合参考图11和图12，图11为在图9基础上的示意图，图12为在图10基础上的示意图，图11为沿图12中切割线A-A1的剖面图，在基板200的边缘区域的表面形成连接胶层260。
所述连接胶层260包围所述电容结构230和芯片210。
所述连接胶层260并不连续。
参考图13，图13为在图11基础上的示意图，提供散热盖270，将所述散热盖270置于所述基板200上，所述散热盖270围成的空间容纳所述芯片210、金属导热层250、电容结构230和盖板结构300。
所述散热盖270包括侧盖和顶盖，所述侧盖与所述顶盖连接，所述侧盖位于所述基板200的边缘区域上且位于芯片210和电容结构230的侧部，所述顶盖位于所述侧盖、电容结构230、芯片210和金属导热层250上。
所述散热盖270用于将封装结构内部的热量散发至外界环境中。
所述顶盖与金属导热层250接触。
所述侧盖位于所述连接胶层260上，所述连接胶层260将侧盖与基板200的边缘区域固定。
所述散热盖270朝向金属导热层的区域表面具有第二镀金层，金属导热层和第二镀金层接触，具体的，顶盖朝向金属导热层的区域表面具有第二镀金层。
所述散热盖270和基板200的边缘区域并不是完全封死的，而是在部分区域留有一些小开口(即封装结构的排气口)，这样利于高温回炉焊中残留在金属导热层250中的助焊剂挥发排出至外界环境。
参考图14，将所述散热盖270置于所述基板200上后，采用第一高温回流焊工艺将散热盖270、芯片210与金属导热层250焊接在一起；进行第一高温回流焊工艺后，采用第二高温回流焊工艺将焊球280焊接在基板200底部。
第一高温回流焊工艺的温度大于所述金属导热层的熔点，第二高温回流焊工艺的温度大于第一高温回流焊工艺的温度。
所述焊球280的材料为锡、锡银合金、锡银铜合金、锡铅合金或含金合金。
所述焊球280的材料选择锡、锡银合金或锡银铜合金的好处包括：绿色环保，可靠性好。所述焊球280的材料选择锡铅合金的好处是：浸润性好，工艺温度低。
第一高温回流焊工艺后，所述第一盖板层310的上表面低于所述金属导热层250的上表面。
本实施例还提供采用一种上述方法形成的封装结构，请参考图14，包括：基板200；位于所述基板200部分表面的芯片210；位于所述芯片210顶部表面的金属导热层250；位于芯片210周围的基板200的表面的电容结构230，且所述电容结构230和所述芯片210相互分立；盖板结构300，所述盖板结构300包括第一盖板层310和与第一盖板层310连接的第二盖板层320，第一盖板层310中具有贯穿第一盖板层310的第一开口301，第二盖板层320位于第一盖板层310的底部且与第一盖板层310垂直，第二盖板层320环绕第一开口301，第一盖板层310位于电容结构230上，所述芯片210位于第一开口301中，第二盖板层320位于所述电容结构230和芯片210之间且与基板200固定。
在一个实施例中。所述盖板结构300的材料为玻璃、橡胶、塑料或树脂。
在另一个实施例中，所述盖板结构300的材料为金属，如不锈钢，所述盖板结构300的表面还具有绝缘隔离层。
所述绝缘隔离层的材料包括阳极氧化膜、化学气相沉积镀层、物理气相沉积镀层或油墨。在一个具体的实施例中，所述绝缘隔离层的材料为氮化铬。
所述芯片210投影至所述基板200表面的形状呈矩形或正方形，所述芯片210投影至所述基板200的形状具有第一芯片边以及第二芯片边，第一芯片边与第二芯片边垂直。
所述第一盖板层310投影至所述基板200表面的形状呈矩形环或方形环，所述第一盖板层投影至所述基板表面的形状具有内环和外环，所述外环包围所述内环，所述内环具有第一盖板内边和第二盖板内边，第一盖板内边与第二盖板内边垂直，所述外环具有第一盖板外边和第二盖板外边，第一盖板外边与第二盖板外边垂直。
所述电容结构230投影在所述基板200表面的形状呈矩形或正方形，所述电容结构230投影在所述基板200表面的形状具有第一电容边和第二电容边。
第一电容边、第一盖板外边、第一盖板内边和第一芯片边彼此平行，第二电容边、第二盖板外边、第二盖板内边和第二芯片边彼此平行。
所述第一盖板内边的尺寸等于第一芯片边的尺寸与2倍的第一最大位置误差之和；所述第二盖板内边的尺寸等于第二芯片边的尺寸与2倍的第二最大位置误差之和；第一盖板外边的尺寸等于第一芯片边的尺寸、第一电容边的尺寸与2倍的第一最大位置误差之和；第一电容边的尺寸等于第二芯片边的尺寸、第二电容边的尺寸与2倍的第二最大位置误差之和。
所述第二最大位置误差为0.03mm～0.05mm。
当芯片210投影至所述基板200表面的形状呈矩形时，第一盖板层310投影至所述基板200表面的形状呈矩形环。当芯片210投影至所述基板200表面的形状正方形时，第一盖板层310投影至所述基板200表面的形状呈方形环。
需要说明的是，在其他实施例中，芯片210投影至所述基板200表面的形状呈椭圆形，第一盖板层310投影至所述基板200表面的形状呈椭圆环；在其他实施例中，芯片210投影至所述基板200表面的形状呈圆形，第一盖板层310投影至所述基板200表面的形状呈圆环。
第一盖板层310至电容结构230顶部表面之间的距离大于第三最大位置误差，第三最大位置误差为0.05mm～0.1mm。第一盖板层310至电容结构230顶部表面之间的距离指的是：第一盖板层310的顶部表面至电容结构230顶部表面之间的距离。
所述第一盖板层310的上表面低于所述金属导热层250的上表面。
所述封装结构还包括：位于所述第二盖板层320底部和基板200之间的封胶层240。
所述封胶层240的宽度小于第一最大位置误差。
所述第一最大位置误差为0.03mm～0.05mm。
所述金属导热层250的材料包括铟、铟合金、锡合金或银合金。
所述封装结构还包括：位于所述金属导热层250和芯片210之间的第一镀金层；位于所述基板200上的散热盖270，所述散热盖270围成的空间容纳所述芯片210、金属导热层250、电容结构230和盖板结构300，所述散热盖270朝向金属导热层的区域表面具有第二镀金层，金属导热层和第二镀金层接触；位于基板底部的焊球280。
本实施例中，所述封装结构为BGA(ball grid Array)结构。
需说明的是，当金属导热层250选用除铟外其他导电性或易喷溅材料时，本发明设置的盖板结构300也适用于对电容结构的防护。
当金属导热层250的材料为在高温下容易流动的材料时，即使金属导热层250在高温回流焊中会流动，那么金属导热层250的材料也仅会流动至第二盖板层320和芯片210之间的槽中，盖板结构能够将金属导热层250流动至第二盖板层320和芯片210之间的槽的材料和电容结构隔离。
需要说明的是，若电容结构表面的焊锡点和盖板结构接触，那么电容结构表面的焊锡点在高温回流焊工艺中就容易沿着盖板结构表面流动，导致电容结构表面的焊锡点之间连接在一起。本实施例中，第一盖板层310和电容结构230是不接触的，第二盖板层320和电容结构230也是不接触的，这样电容结构表面相互分立的焊锡点在高温回流焊工艺中也不容易连接在一起。
虽然本发明披露如上，但本发明并非限定于此。任何本领域技术人员，在不脱离本发明的精神和范围内，均可作各种更动与修改，因此本发明的保护范围应当以权利要求所限定的范围为准。

Claims (8)

1.一种封装结构，其特征在于，包括：
基板；
位于所述基板部分表面的芯片；
位于所述芯片顶部表面的金属导热层；
位于芯片周围的基板的表面的电容结构，且所述电容结构和所述芯片相互分立；
盖板结构，所述盖板结构包括第一盖板层和与第一盖板层连接的第二盖板层，第一盖板层中具有贯穿第一盖板层的第一开口，第二盖板层位于第一盖板层的底部且与第一盖板层垂直，第二盖板层环绕第一开口，第一盖板层位于电容结构上，所述芯片位于第一开口中，第二盖板层位于所述电容结构和芯片之间且与基板固定，且与所述第二盖板层相对的位置不设置盖板层，以使所述电容结构与第二盖板层相对的一面开口；
散热盖，位于所述基板上，所述散热盖围成的空间容纳所述芯片、金属导热层、电容结构和盖板结构，所述散热盖和基板的边缘区域设置有排气口；
所述芯片投影至所述基板表面的形状呈矩形或正方形，所述芯片投影至所述基板的形状具有第一芯片边以及第二芯片边，第一芯片边与第二芯片边垂直；所述第一盖板层投影至所述基板表面的形状呈矩形环或方形环，所述第一盖板层投影至所述基板表面的形状具有内环和外环，所述内环具有第一盖板内边和第二盖板内边，第一盖板内边与第二盖板内边垂直，所述外环具有第一盖板外边和第二盖板外边，第一盖板外边与第二盖板外边垂直；所述电容结构投影在所述基板表面的形状呈矩形或正方形，所述电容结构投影在所述基板表面的形状具有第一电容边和第二电容边；第一电容边、第一盖板外边、第一盖板内边和第一芯片边彼此平行，第二电容边、第二盖板外边、第二盖板内边和第二芯片边彼此平行；
所述第一盖板内边的尺寸等于第一芯片边的尺寸与2倍的第一最大位置误差之和；所述第二盖板内边的尺寸等于第二芯片边的尺寸与2倍的第二最大位置误差之和；第一盖板外边的尺寸等于第一芯片边的尺寸、第一电容边的尺寸与2倍的第一最大位置误差之和；第一电容边的尺寸等于第二芯片边的尺寸、第二电容边的尺寸与2倍的第二最大位置误差之和；
所述第一最大位置误差为0.03mm～0.05mm，所述第二最大位置误差为0.03mm～0.05mm。
2.根据权利要求1所述的封装结构，其特征在于，所述盖板结构的材料为玻璃、橡胶、塑料或树脂。
3.根据权利要求1所述的封装结构，其特征在于，所述盖板结构的材料为金属；所述盖板结构的表面还具有绝缘隔离层。
4.根据权利要求1所述的封装结构，其特征在于，第一盖板层至电容结构顶部表面之间的距离大于第三最大位置误差，第三最大位置误差为0.05mm～0.1mm。
5.根据权利要求1所述的封装结构，其特征在于，所述第一盖板层的上表面低于所述金属导热层的上表面。
6.根据权利要求1所述的封装结构，其特征在于，还包括：位于所述第二盖板层底部和基板之间的封胶层。
7.根据权利要求6所述的封装结构，其特征在于，所述封胶层的宽度小于第一最大位置误差，所述第一最大位置误差为0.03mm～0.05mm。
8.一种封装结构的形成方法，其特征在于，包括：
提供基板，所述基板的部分表面具有芯片，所述基板的表面还具有位于芯片周围的电容结构，所述电容结构和所述芯片相互分立；
提供盖板结构，所述盖板结构包括第一盖板层和与第一盖板层连接的第二盖板层，第一盖板层中具有贯穿第一盖板层的第一开口，第二盖板层位于第一盖板层的底部且与第一盖板层垂直，第二盖板层环绕第一开口；
将所述盖板结构置于基板上，第一盖板层位于电容结构上，所述芯片位于第一开口中，第二盖板层位于所述电容结构和芯片之间且与基板固定，且与所述第二盖板层相对的位置不设置盖板层，以使所述电容结构与第二盖板层相对的一面开口；
将所述盖板结构置于基板上后，在所述芯片的顶部表面形成金属导热层；
形成所述金属导热层后，进行高温回流焊，所述高温回流焊采用的温度大于所述金属导热层的熔点；
所述高温回流焊包括第一高温回流焊工艺和第二高温回流焊工艺；所述封装结构的形成方法还包括：提供散热盖，所述散热盖围成的空间容纳所述芯片、金属导热层、电容结构和盖板结构，所述散热盖和基板的边缘区域设置有排气口，将所述散热盖置于所述基板上，所述散热盖围成的空间容纳所述芯片、金属导热层、电容结构和盖板结构；将所述散热盖置于所述基板上后，采用第一高温回流焊工艺将散热盖、芯片与金属导热层焊接在一起；进行第一高温回流焊工艺后，采用第二高温回流焊工艺将焊球焊接在基板底部。
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