CN109801926A - Thin film transistor substrate, preparation method thereof and display device - Google Patents
Thin film transistor substrate, preparation method thereof and display device Download PDFInfo
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- CN109801926A CN109801926A CN201910044064.4A CN201910044064A CN109801926A CN 109801926 A CN109801926 A CN 109801926A CN 201910044064 A CN201910044064 A CN 201910044064A CN 109801926 A CN109801926 A CN 109801926A
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- 239000010409 thin film Substances 0.000 title claims abstract description 76
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 67
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000011733 molybdenum Substances 0.000 claims abstract description 24
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 24
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002131 composite material Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 259
- 229920002120 photoresistant polymer Polymers 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000004411 aluminium Substances 0.000 claims description 25
- 230000000149 penetrating effect Effects 0.000 claims description 22
- 238000010276 construction Methods 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 14
- 238000009832 plasma treatment Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000002585 base Substances 0.000 description 24
- 230000036647 reaction Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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Landscapes
- Thin Film Transistor (AREA)
Abstract
The invention relates to a thin film transistor substrate, a preparation method thereof and a display device. According to the preparation method, the reflection electrode with the composite structure of the molybdenum film, the aluminum film and the molybdenum nitride film is formed, so that the diffusion of aluminum to the thin film transistor can be effectively blocked, the oxidation of aluminum is effectively prevented, the battery reaction caused by etching of the aluminum electrode is avoided, and the product yield can be improved; the preparation method has simple steps and can realize quantitative production.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of thin film transistor base plate and preparation method thereof, display
Device.
Background technique
Liquid crystal display panel has the characteristics that low power consumption and external form are thin, is widely used in various electronic products.
The Land use systems of light source are divided, liquid crystal display panel can be divided into penetration, reflective and semi-penetration semi-reflective.Penetration liquid crystal
Display is using backlight module as its light source, and reflective liquid-crystal display is using external environment light as its light source；And
Semi-penetrated semi-reflected liquid crystal display is to use backlight module and external environment light as its light source simultaneously, thus not by the external world
Light influences, and has cost-saved.
However, illustrative semi-penetrated semi-reflected liquid crystal display is during the preparation process, reflecting electrode is in etching process
In be easy to cause cell reaction, electrode stability is poor, reduces yield.
Summary of the invention
Based on this, it is necessary to which during the preparation process for semi-penetrated semi-reflected liquid crystal display, reflecting electrode is etching
The problem of be easy to causeing cell reaction in the process, reducing electrode stability and product yield provides a kind of thin film transistor base plate
And preparation method thereof, display device.
In order to achieve the object of the present invention, the present invention adopts the following technical scheme:
A kind of preparation method of thin film transistor base plate, comprising:
Substrate is provided, the substrate includes echo area and penetrating region；
Thin film transistor (TFT) is formed on the substrate, and the thin film transistor (TFT) is formed with an aperture, the thin film transistor (TFT)
Covering echo area and penetrating region, the aperture are located at echo area；
The two sides of the aperture on the thin film transistor (TFT) form the first photoresist layer and the second photoresist layer；
Patterned process is carried out to first photoresist layer and second photoresist layer, makes first photoresist layer and described
Second photoresist layer is formed simultaneously with multiple non-through holes and convex block, carries out curing process to the convex block, forms the convex block
There are a curved surfaces；
Through electrode is formed on the region that second photoresist layer corresponds to penetrating region, in first photoresist layer, described
Second photoresist layer and the thin film transistor (TFT), which correspond to, forms reflecting electrode on the region of echo area, the reflecting electrode is molybdenum
The composite construction of film, aluminium film and molybdenum nitride film.
In one of the embodiments, the composite construction be the molybdenum film, the aluminium film and the molybdenum nitride film according to
Secondary first photoresist layer, second photoresist layer and the thin film transistor (TFT) of being deposited on corresponds to folding on the region of echo area
Layer structure.
In one of the embodiments, the molybdenum film with a thickness of 200 angstroms~300 angstroms, the aluminium film with a thickness of 2500
Angstrom~4000 angstroms, the molybdenum nitride film with a thickness of 400 angstroms~500 angstroms.
Patterned process is carried out to first photoresist layer and the second photoresist layer in one of the embodiments, is made described
The step of first photoresist layer and second photoresist layer are formed simultaneously with multiple non-through holes and convex block, specifically:
Using half-penetration type mask plate, make first photoresist layer and second photoresist layer simultaneously by a patterning processes
It is formed with multiple non-through holes and convex block.
The half-penetration type mask plate includes lightproof area and semi-transparent region, the shading in one of the embodiments,
Region corresponds to the convex block, and the semi-transparent region corresponds to the non-through hole.
Through electrode is formed on the region that second photoresist layer corresponds to penetrating region in one of the embodiments,
First photoresist layer, second photoresist layer and the thin film transistor (TFT) correspond to and form reflecting electrode on the region of echo area
The step of before, further includes:
Plasma treatment is carried out on the surface of first photoresist layer and second photoresist layer, forms plasma treatment
Layer.
In one of the embodiments, the step of the pixel region of the substrate forms thin film transistor (TFT), comprising:
Grid layer is formed on the substrate, and the grid layer is located at echo area；
Gate insulating layer is formed on the grid layer and the substrate；
Semiconductor layer is formed in the region that the gate insulating layer corresponds to grid layer；
Metal layer, metal layer exposed portion gate insulator are formed on the semiconductor layer and the gate insulating layer
Layer, the metal layer have a channel region, and the channel region portions run through the semiconductor layer；
Protective layer is formed on the metal layer, the channel region and the part of grid pole insulating layer；
Wherein, the aperture runs through the protective layer, exposed portion metal layer.
In one of the embodiments, the metal layer include the first source/drain and the second source/drain, first source/
Drain electrode and second source/drain are located at the two sides of the channel region.
A kind of thin film transistor base plate prepared by preparation method as described above, comprising:
Substrate, the substrate include echo area and penetrating region；
Thin film transistor (TFT) is formed on the substrate, and echo area and penetrating region are covered, and the thin film transistor (TFT) has one to open
Hole, the aperture are located at echo area；
First photoresist layer and the second photoresist layer are formed in the two sides of aperture on the thin film transistor (TFT), first photoresist
Layer and second photoresist layer have multiple non-through holes and convex block simultaneously, and the convex block is formed with a curved surfaces；
Through electrode is formed in second photoresist layer and corresponds on the region of penetrating region；
It is corresponding anti-to be formed in first photoresist layer, second photoresist layer and the thin film transistor (TFT) for reflecting electrode
It penetrates on the region in area, the reflecting electrode has the composite construction of molybdenum film, aluminium film and molybdenum nitride film.
A kind of display device, comprising:
Backlight module and display panel；
Wherein, the display panel includes thin film transistor base plate as described above.
Above-mentioned preparation method can quantify to produce, and have the composite construction of molybdenum film, aluminium film and molybdenum nitride film by preparing
Reflecting electrode, can effectively stop diffusion of the aluminium to thin film transistor (TFT), effectively prevent the oxidation of aluminium, aluminium electrode is avoided to etch
Shi Zaocheng cell reaction, so as to improve product yield.
Above-mentioned thin film transistor base plate, including substrate, thin film transistor (TFT), the first photoresist layer, the second photoresist layer, through electrode
And reflecting electrode；Thin film transistor base plate at least has the advantage that molybdenum film, aluminium film and the molybdenum nitride by reflecting electrode
The composite construction of film can effectively stop diffusion of the aluminium to thin film transistor (TFT), effectively prevent the oxidation of aluminium, aluminium electrode is avoided to lose
Cell reaction is caused when quarter, thus thin film transistor base plate stability with higher and product yield.
Above-mentioned display device has the advantages of thin film transistor base plate, stability with higher and product yield, mentions
The experience of high user.
Detailed description of the invention
Fig. 1 is the flow chart of the preparation method of thin film transistor base plate in an embodiment；
Fig. 2 is the specific flow chart of step S102 in Fig. 1 preparation method；
Fig. 3 is the schematic diagram of the section structure of step S102 production process in Fig. 1 preparation method；
Fig. 4 is the schematic diagram of the section structure of step S104 production process in Fig. 1 preparation method；
Fig. 5 is the schematic diagram of the section structure of step S104 production process in Fig. 1 preparation method；
Fig. 6 is the schematic diagram of the section structure of step S105 production process in Fig. 1 preparation method；
Fig. 7 is the schematic diagram of the section structure of thin film transistor base plate in an embodiment；
Fig. 8 is the schematic diagram of the section structure of thin film transistor base plate in another embodiment.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give optional embodiment of the invention.But the invention can be realized in many different forms, however it is not limited to herein
Described embodiment.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more saturating
It is thorough comprehensive.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
Body embodiment purpose, it is not intended that in limitation the present invention.
It is the flow diagram of the preparation method of the thin film transistor base plate in the present embodiment referring to Fig. 1, Fig. 1.The preparation
Method is comprising steps of S101, S102, S103, S104 and S105.It is specific as follows:
Step S101, provides substrate, and substrate includes echo area and penetrating region.
Wherein, substrate 110 can select glass or transparent organic material.In one embodiment, glass substrate can be
It is no alkali borosilicate glass physical characteristic with higher, preferable corrosion resistance, higher without alkali borosilicate ultra-thin glass
Thermal stability and lower density and higher elasticity modulus.Substrate 110 includes echo area and penetrating region.
Step S102, forms thin film transistor (TFT) on substrate, and thin film transistor (TFT) is formed with an aperture, thin film transistor (TFT) covering
Echo area and penetrating region, aperture are located at echo area.Wherein, aperture is substantially outermost one far from base in thin film transistor (TFT)
Through hole.
In one embodiment, referring to fig. 2, step S102 includes S1021, S1022, S1023, S1024 and S1025.
Step S1021, forms grid layer on substrate, and grid layer is located at echo area.
Step S1022 forms gate insulating layer on grid layer and substrate.
Step S1023 forms semiconductor layer in the region that gate insulating layer corresponds to grid layer.
Step S1024 forms metal layer, metal layer exposed portion gate insulator on semiconductor layer and gate insulating layer
Layer, metal layer have a channel region, and channel region portions run through semiconductor layer.
Step S1025 forms protective layer on metal layer and part of grid pole insulating layer.Wherein, aperture runs through protective layer, dew
Partial metal layers out.
Specifically, it please assist refering to Fig. 3.
Wherein, grid layer 120 is arranged on substrate 110.The material of grid layer 120 can select metal, including but unlimited
In at least one of molybdenum, titanium, aluminium and copper, to guarantee good electric conductivity.Wherein it is possible to pass through rf magnetron sputtering, heat
Evaporation, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique form grid layer 120；The thickness of grid layer 120
Degree can be selected and be adjusted according to practical situations and properties of product, be not further limited herein.
Wherein, gate insulating layer 130 is arranged on substrate 110, and covers grid layer 120 and substrate 110.Gate insulating layer
130 material includes but is not limited at least one of silica, silicon nitride.The thickness of gate insulating layer 130 can be according to reality
Border applicable cases and properties of product are selected and are adjusted, and are not further limited herein.Gate insulating layer 130 can lead to
It crosses rf magnetron sputtering, thermal evaporation, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique and is formed in substrate
On 110.
Wherein, semiconductor layer is formed in the region of the corresponding grid layer 120 of gate insulating layer 130.In one embodiment, half
Conductor layer includes the active layer 140 formed on gate insulating layer 130 and the doped layer 150 formed on active layer 140.It is active
Layer 140 is arranged on gate insulating layer 130, is located at 120 top of grid layer；Doped layer 150 is arranged on active layer 140.It is active
Layer 140 can select amorphous silicon usually as conductive medium, material.The thickness of active layer 140 can be according to practical application
Situation and properties of product are selected and are adjusted, and are not further limited herein.Doped layer 150 can be in amorphous silicon layer
Middle carry out n-type doping, be also possible in amorphous silicon layer carry out p-type doping, optionally, doped layer 150 be in amorphous silicon layer into
Row n-type doping, meanwhile, it is N-type heavy doping.
There is channel region 150a, channel region 150a to run through doped layer 150, further, channel region at the middle part of doped layer 150
150a can also partially be through to active layer 140.Wherein, through that can be realized by photoetching or lithographic method, partially run through
All etch away active layer 140, it will be understood that for the specific thickness of " part ", can according to practical condition and
Properties of product make a choice and adjust.In one embodiment, can using etching technics to active layer 140 and doped layer 150 into
Row patterned process, and channel region 150a is formed by etching technics.
Wherein, metal layer 160 is arranged on gate insulating layer 130 and doped layer 150,160 exposed portion grid of metal layer
Insulating layer, channel region 150a run through metal layer 160.Metal layer 160 can select metal material, including but not limited to molybdenum, titanium, aluminium
At least one of with copper, to guarantee good electric conductivity.Metal layer 160 includes the first source/drain and the second source/drain,
First source/drain and the second source/drain are located at the two sides of channel region 150a.It include source in first source/drain and the second source/drain
Pole and drain electrode, specifically can be the first source/drain is source electrode, and the second source/drain is drain electrode；Being also possible to the second source/drain is
Source electrode, the first source/drain are drain electrode.
Wherein, protective layer 170 is arranged on metal layer 160, channel region 150a and part of grid pole insulating layer, film crystal
The aperture of pipe runs through protective layer 170, and protective layer 170 is made to be formed with pass through aperture 170a with exposed portion metal layer 160, through hole
170a is located at echo area.Protective layer 170 can be used for protecting overlay area from polluting and damaging, and improve the use of thin film transistor (TFT)
Service life, material can be, but not limited to select one or more in silicon nitride and silica.
The two sides of step S103, the aperture on thin film transistor (TFT) form the first photoresist layer and the second photoresist layer.
Wherein, the first photoresist layer and the second photoresist layer are transparent organic photoresist layer, can be using the transparent organic of routine
Material is not limited herein.
Step S104 carries out patterned process to the first photoresist layer and the second photoresist layer, makes the first photoresist layer and the second light
Resistance layer is formed simultaneously with multiple non-through holes and convex block, carries out curing process to convex block, convex block is made to be formed with a curved surfaces.
Wherein, patterned process is carried out to the first photoresist layer and the second photoresist layer, makes the first photoresist layer and the second photoresist layer
The step of being formed simultaneously with multiple non-through holes and convex block, specifically: half-penetration type mask plate is utilized, is made by a patterning processes
First photoresist layer and the second photoresist layer are formed simultaneously with multiple non-through holes and convex block.In one embodiment, half-penetration type is utilized
Mask plate makes the first photoresist layer and the second photoresist layer be formed simultaneously with multiple non-through holes and convex block by a patterning processes,
It is specifically as follows: development is exposed to the first photoresist layer and the second photoresist layer using half-penetration type mask plate, it is complete to form photoresist
Retain region and photoresist partly retains region.Photoresist is fully retained region and corresponds to convex block, and photoresist half retains region and corresponds to non-through hole.
Non-through hole refers to that the depth of penetration is the hole of 20%-80%, and the exposure depth by controlling half-penetration type mask plate controls non-through
The depth of penetration in hole.
It please assist refering to Fig. 4, the first photoresist layer 180 and the second photoresist layer 190 are respectively formed on protective layer 170, and first
Photoresist layer 180 is located at the side of through hole 170a, and the second photoresist layer 190 is located at the other side of through hole 170a.First photoresist layer
180 and second photoresist layer 190 be respectively formed on multiple non-through hole F1 and convex block T1.Half-penetration type mask plate 20 includes lightproof area
21 and semi-transparent region 22, the corresponding convex block T1 of lightproof area 21, the corresponding non-through hole F1 in semi-transparent region 22.
By using half-penetration type mask plate, the number exposed using mask plate is effectively reduced, so that it is multiple to reduce process
Miscellaneous degree reduces processing cost while shortening process time, improves production capacity.
Wherein, the step of curing process being carried out to convex block, convex block is made to be formed with a curved surfaces, specifically: utilize a heat
Processing curing process solidifies convex block, and convex block is made to be formed with a curved surfaces (please assist refering to Fig. 5).Heat treatment for solidification system
Journey can use the modes such as the hot wind of oven or the heat transfer of hot plate.
Step S105 forms through electrode on the region that the second photoresist layer corresponds to penetrating region, in the first photoresist layer, second
Photoresist layer and thin film transistor (TFT) correspond to and form reflecting electrode on the region of echo area, reflecting electrode have molybdenum film, aluminium film and
The composite construction of molybdenum nitride film.
It please assist refering to Fig. 6, through electrode 200 is correspondingly arranged at penetrating region B, and reflecting electrode 210 is correspondingly arranged at reflection
Area A.Specifically, through electrode 200 is arranged on the region of the corresponding penetrating region of the second photoresist layer 190, covers the second photoresist layer 190
Part non-through hole and convex block with arcwall face, through electrode 200 be transparent electrode；Reflecting electrode 210 is arranged first
Photoresist layer 180, the second photoresist layer 190 and thin film transistor (TFT) correspond on the region of echo area, cover the non-of the first photoresist layer 180
Through hole and convex block with arcwall face, covering the exposed region of thin film transistor (TFT), (exposed region is greater than or equal to film crystal
The aperture of pipe), and cover the part non-through hole of the second photoresist layer 190 and the convex block with arcwall face.Reflecting electrode as a result,
210 are in contact with through electrode 200, and reflecting electrode 210 also passes through the metal layer of the aperture of thin film transistor (TFT) and thin film transistor (TFT)
160 are in contact.
Wherein, reflecting electrode 210 has the composite construction of molybdenum (Mo) film, aluminium (Al) film and molybdenum nitride (MoN) film, can
Effectively stop diffusion of the Al to thin film transistor (TFT), prevent the oxidation of Al, and Al electrode is avoided to cause cell reaction in etching.Tool
Body, which is that molybdenum film, aluminium film and molybdenum nitride film are sequentially deposited at the first photoresist layer, the second photoresist layer and film
Transistor corresponds to the laminated construction on the region of echo area, can effectively stop diffusion of the Al to thin film transistor (TFT) by molybdenum film,
The oxidation that Al can be effectively prevented by molybdenum nitride film can lost by the combination of molybdenum film and molybdenum nitride film to avoid Al electrode
Cell reaction is caused when quarter, so as to improve product yield.
The depositional mode of molybdenum film, aluminium film and molybdenum nitride film can be made a choice according to practical condition and properties of product and
Adjustment, is not limited herein.Optionally, the thickness of composite construction may is that molybdenum film with a thickness of 200 angstroms~300 angstroms, aluminium film
With a thickness of 2500 angstroms~4000 angstroms, molybdenum nitride film with a thickness of 400 angstroms~500 angstroms, to effectively avoid Al electrode in etching
Cause cell reaction.
In one embodiment, in order to further increase the electrode performance of through electrode and reflecting electrode, step S105 it
Before, further include step S106, carries out plasma treatment on the surface of the first photoresist layer and the second photoresist layer, form plasma treatment
Layer.Plasma treatment layer is covered on the surface of the first photoresist layer and the second photoresist layer as a result,.Using plasma technology to the first light
The surface of resistance layer and the second photoresist layer carries out plasma treatment, can improve the chemistry of the first photoresist layer and the second photoresist layer surface
Component and wetting property guarantee that reliably adherency is imitated between the first photoresist layer and the second photoresist layer and through electrode and reflecting electrode
Fruit, and can reduce the surface roughness and square resistance of through electrode and reflecting electrode, improve electrical property.
It should be noted that the formation process of above layers may include rf magnetron sputtering, thermal evaporation, vacuum electron beam
Evaporation and plasma reinforced chemical vapour deposition technique.It is appreciated that the formation process can according to practical situations with
And properties of product are selected and are adjusted, and are not further limited herein.The thickness of above layers can also be according to actually answering
It is selected and is adjusted with situation and properties of product, be not further limited herein.
Preparation method provided by the embodiment, the preparation method step is simple, can quantify to produce, prepare under at least having
The thin film transistor base plate of column advantage: by the composite construction of reflecting electrode, expansion of the Al to thin film transistor (TFT) can effectively be stopped
It dissipates, effectively prevent the oxidation of Al, avoid Al electrode from causing cell reaction in etching, so as to improve product yield；Meanwhile
By using half-penetration type mask plate, effectively reduces and contracted using the number of mask plate exposure to reduce complex procedures degree
Processing cost is reduced while short process time, improves production capacity；Furthermore by plasma technology to the first photoresist layer and
The surface of two photoresist layers carries out plasma treatment, can improve the chemical constituent and leaching of the first photoresist layer and the second photoresist layer surface
Lubricant nature energy guarantees reliable adhesiving effect between the first photoresist layer and the second photoresist layer and through electrode and reflecting electrode, and
It can reduce the surface roughness and square resistance of through electrode and reflecting electrode, improve electrical property.
A kind of thin film transistor base plate is present embodiments provided, which uses aforementioned film transistor base
The preparation method embodiment of plate is manufactured.
In the present embodiment, thin film transistor base plate include substrate, thin film transistor (TFT), the first photoresist layer, the second photoresist layer,
Through electrode and reflecting electrode.
Wherein, substrate has echo area and penetrating region；Thin film transistor (TFT) is formed on substrate, is covered echo area and is penetrated
Area, thin film transistor (TFT) have an aperture, and aperture is located at echo area；First photoresist layer and the second photoresist layer, are formed in film crystal
The two sides of aperture on pipe, the first photoresist layer and the second photoresist layer have multiple non-through holes and convex block simultaneously, and convex block is formed with one
Curved surfaces；Through electrode is formed in the second photoresist layer and corresponds on the region of penetrating region；Reflecting electrode be formed in the first photoresist layer,
Second photoresist layer and thin film transistor (TFT) correspond on the region of echo area, and reflecting electrode has molybdenum film, aluminium film and molybdenum nitride film
Composite construction.
In one embodiment, referring to Fig. 7, thin film transistor base plate includes substrate 110, grid layer 120, gate insulating layer
130, active layer 140, doped layer 150, metal layer 160, protective layer 170, the first photoresist layer 180, the second photoresist layer 190, penetrate
Electrode 200 and reflecting electrode 210.Wherein, grid layer 120, gate insulating layer 130, active layer 140, doped layer 150, metal
Layer 160 and protective layer 170 constitute thin film transistor (TFT).
In another embodiment, referring to Fig. 8, thin film transistor base plate further includes being covered on the first photoresist layer 180 and
The plasma treatment layer 220 on two photoresist layers, 190 surface, to guarantee the first photoresist layer 180 and the second photoresist layer 190 and penetrate electricity
Reliable adhesiving effect between pole 200 and reflecting electrode 210 reduces the surface roughness of through electrode 200 and reflecting electrode 210
And square resistance, improve electrical property.
In the present embodiment, substrate 110, grid layer 120, gate insulating layer 130, active layer 140, doped layer 150, metal
Layer 160, protective layer 170, the first photoresist layer 180, the second photoresist layer 190, through electrode 200, reflecting electrode 210 and plasma
The associated description of process layer 220 is not further carried out repeats herein referring to a upper embodiment.
Thin film transistor base plate provided by the embodiment, including substrate, thin film transistor (TFT), the first photoresist layer, the second photoresist layer,
Through electrode and reflecting electrode can also include plasma treatment layer；Thin film transistor base plate at least has the advantage that logical
Diffusion of the Al to thin film transistor (TFT) can effectively be stopped by crossing molybdenum film, and the oxidation of Al can be effectively prevented by molybdenum nitride film, pass through
The combination of molybdenum film and molybdenum nitride film can cause cell reaction in etching to avoid Al electrode, so that the stability of electrode is improved,
Improve product yield；By plasma treatment layer, guarantee the first photoresist layer and the second photoresist layer and through electrode and reflecting electrode
Between reliable adhesiving effect, reduce through electrode and reflecting electrode surface roughness and square resistance, improve electrical property.
The present embodiment additionally provides display device, including backlight module and display panel；The display panel includes above-mentioned reality
Apply the thin film transistor base plate in example.Wherein, the light of backlight module by the through electrode of penetrating region as light source, together
When, external environment light is by the reflection for the reflecting electrode being located in the echo area and as light source, so that display device is not by outer
Boundary's light influences；Due to the molybdenum film of reflecting electrode, the composite construction of aluminium film and molybdenum nitride film, so that the display of display device is imitated
Fruit and product yield are improved, to improve the experience of user.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of preparation method of thin film transistor base plate characterized by comprising
Substrate is provided, the substrate includes echo area and penetrating region；
Thin film transistor (TFT) is formed on the substrate, and the thin film transistor (TFT) is formed with an aperture, the thin film transistor (TFT) covering
Echo area and penetrating region, the aperture are located at echo area；
The two sides of the aperture on the thin film transistor (TFT) form the first photoresist layer and the second photoresist layer；
Patterned process is carried out to first photoresist layer and second photoresist layer, makes first photoresist layer and described second
Photoresist layer is formed simultaneously with multiple non-through holes and convex block, carries out curing process to the convex block, the convex block is made to be formed with one
Curved surfaces；
Through electrode is formed on the region that second photoresist layer corresponds to penetrating region, in first photoresist layer, described second
Photoresist layer and the thin film transistor (TFT), which correspond to, forms reflecting electrode on the region of echo area, the reflecting electrode have molybdenum film,
The composite construction of aluminium film and molybdenum nitride film.
2. preparation method as described in claim 1, which is characterized in that the composite construction be the molybdenum film, the aluminium film and
The molybdenum nitride film is sequentially deposited at the corresponding reflection of first photoresist layer, second photoresist layer and the thin film transistor (TFT)
Laminated construction on the region in area.
3. preparation method according to claim 2, which is characterized in that the molybdenum film with a thickness of 200 angstroms~300 angstroms, institute
State aluminium film with a thickness of 2500 angstroms~4000 angstroms, the molybdenum nitride film with a thickness of 400 angstroms~500 angstroms.
4. the preparation method as described in claim any one of 1-3, which is characterized in that first photoresist layer and the second photoresist layer
Patterned process is carried out, first photoresist layer and second photoresist layer is made to be formed simultaneously with multiple non-through holes and convex block
Step, specifically:
Using half-penetration type mask plate, it is formed simultaneously first photoresist layer and second photoresist layer by a patterning processes
There are multiple non-through holes and convex block.
5. the preparation method according to claim 4, which is characterized in that the half-penetration type mask plate includes lightproof area and half
Transmission region, the lightproof area correspond to the convex block, and the semi-transparent region corresponds to the non-through hole.
6. preparation method according to claim 1-3, which is characterized in that penetrated in second photoresist layer correspondence
Through electrode is formed on the region in area, it is corresponding in first photoresist layer, second photoresist layer and the thin film transistor (TFT)
Before the step of forming reflecting electrode on the region of echo area, further includes:
Plasma treatment is carried out on the surface of first photoresist layer and second photoresist layer, forms plasma treatment layer.
7. preparation method according to claim 1-3, which is characterized in that formed in the pixel region of the substrate
The step of thin film transistor (TFT), comprising:
Grid layer is formed on the substrate, and the grid layer is located at echo area；
Gate insulating layer is formed on the grid layer and the substrate；
Semiconductor layer is formed in the region that the gate insulating layer corresponds to grid layer；
Form metal layer on the semiconductor layer and the gate insulating layer, metal layer exposed portion gate insulating layer,
The metal layer has a channel region, and the channel region portions run through the semiconductor layer；
Protective layer is formed on the metal layer, the channel region and the part of grid pole insulating layer；
Wherein, the aperture runs through the protective layer, exposed portion metal layer.
8. preparation method according to claim 7, which is characterized in that the metal layer includes the first source/drain and second
Source/drain, first source/drain and second source/drain are located at the two sides of the channel region.
9. a kind of thin film transistor base plate prepared by preparation method according to claims 1-8, which is characterized in that packet
It includes:
Substrate, the substrate include echo area and penetrating region；
Thin film transistor (TFT) is formed on the substrate, and echo area and penetrating region are covered, and the thin film transistor (TFT) has an aperture,
The aperture is located at echo area；
First photoresist layer and the second photoresist layer, are formed in the two sides of aperture on the thin film transistor (TFT), first photoresist layer and
Second photoresist layer has multiple non-through holes and convex block simultaneously, and the convex block is formed with a curved surfaces；
Through electrode is formed in second photoresist layer and corresponds on the region of penetrating region；
Reflecting electrode is formed in first photoresist layer, second photoresist layer and the thin film transistor (TFT) and corresponds to echo area
Region on, the reflecting electrode have molybdenum film, aluminium film and molybdenum nitride film composite construction.
10. a kind of display device characterized by comprising
Backlight module and display panel；
Wherein, the display panel includes thin film transistor base plate as claimed in claim 9.
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| CN109801926B (en) | 2022-01-21 |
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