CN102403271A - Method for manufacturing film transistor substrate and transflective liquid crystal display - Google Patents
Method for manufacturing film transistor substrate and transflective liquid crystal display Download PDFInfo
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- CN102403271A CN102403271A CN2011103999841A CN201110399984A CN102403271A CN 102403271 A CN102403271 A CN 102403271A CN 2011103999841 A CN2011103999841 A CN 2011103999841A CN 201110399984 A CN201110399984 A CN 201110399984A CN 102403271 A CN102403271 A CN 102403271A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 title claims abstract description 17
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000007711 solidification Methods 0.000 claims description 12
- 230000008023 solidification Effects 0.000 claims description 12
- 238000010992 reflux Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000035515 penetration Effects 0.000 abstract description 3
- 238000001723 curing Methods 0.000 abstract 1
- 238000001029 thermal curing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 238000003384 imaging method Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention relates to a method for manufacturing a film transistor substrate, which comprises the following steps of: providing a substrate, wherein the substrate defines a plurality of pixel regions, each pixel region forms a film transistor therein and includes a penetration area and a reflection area; forming a photoresist layer on the film transistor; only using a light cover to expose the photoresist layer, and developing the exposed photoresist layer to form a through opening, a plurality of through holes and bumps, wherein the through opening is located in the penetration area, the through holes and the bumps are arranged in order and are located in the reflection area, and the through opening is greater in size than the through hole; curing the bumps by a thermocuring process to form an arc surface; and forming a reflection electrode on the arc surface.
Description
Technical field
The invention relates to a kind of semi-penetrated semi-reflected liquid crystal display manufacturing method of film transistor base plate, particularly relevant for a kind of semi-penetrated semi-reflected liquid crystal display manufacturing method of film transistor base plate.
Background technology
Display panels has low power consumption and the thin characteristics of external form; Be widely used in the various electronic products; Like products such as hand-held computer, digital camera, mobile phones; Generally speaking, display panels is divided into penetration, reflective and semi-penetration semi-reflective, and penetrating LCD is to utilize module backlight as its light source; Reflective liquid-crystal display is to utilize external environment light as its light source, and semi-penetrated semi-reflected liquid crystal display is to use module backlight and external environment light as its light source simultaneously.
Prior art can be known, when making the thin film transistor base plate of semi-penetrated semi-reflected liquid crystal display, can use eight road light shields to make thin film transistor base plate.With reference to Figure 1A, utilize five road light shields that one thin-film transistor 22 and a through electrode 23 are formed on the substrate 21, wherein substrate 21 definition have a penetrating region 24 and an echo area 25.With reference to Figure 1B, organic photoresistance 26 is coated on thin-film transistor 22 and the through electrode 23.With reference to figure 1C, utilize the 6th road light shield 27, and the organic photoresistance 26 that uses higher exposure 28 will be positioned at penetrating region 24 exposes to the sun and wears.With reference to figure 1D, after developing, form one and run through opening 29 in penetrating region 24.With reference to figure 1E, utilize the 7th road light shield 30, and use low exposure 31 will be positioned at organic photoresistance 26 exposures of echo area 25.With reference to figure 1F, after developing, form a plurality of non-through holes 32 and a plurality of projections 33 in echo area 25.With reference to figure 1G, the hot blast that re-uses baking box is cured (curing) with projection 33, because of the hot reflux characteristic of organic photoresistance 26, and forms curved surfaces 34.With reference to figure 1H, form a reflective metal film, utilize the 8th road light shield then, again reflective metal film is patterned to a reflecting electrode 35, and reflecting electrode 35 is formed on the curved surfaces 34 in the echo area 25, so to accomplish thin film transistor base plate 41.
From the above in order to produce the thin film transistor base plate of semi-penetrated semi-reflected liquid crystal display the time; This processing procedure can use eight road light shields; And every increase by one light shield manufacture time and cost also can increase, and just can reduce display panels production time and cost otherwise reduce the light shield number.
Therefore, just having to provide a kind of manufacturing method of film transistor base plate, can solve aforesaid problem.
Summary of the invention
The present invention provides a kind of manufacturing method of film transistor base plate, and its step comprises: a substrate is provided, and its definition has a plurality of pixel regions, and each pixel region is formed with a thin-film transistor, and each pixel region comprises a penetrating region and an echo area; Form a photoresist layer on this thin-film transistor; Only use a light shield; This photoresist layer makes public; And the photoresist layer after this exposure of developing, so that being formed with one simultaneously, this photoresist layer runs through opening, a plurality of through hole and projection (bump pattern), wherein this runs through opening and is positioned at this penetrating region; Those through holes and projection are arranged in regular turn and are positioned at this echo area, and this runs through the size of the size of opening greater than this through hole; Utilize the heat treatment for solidification processing procedure that those projections are cured, make those projections be formed with a curved surfaces; And form a reflecting electrode in this curved surfaces.
The membrane according to the invention transistor base can be known; The present invention only needs one light shield exposure imaging processing procedure and a heat treatment for solidification processing procedure just can photoresist layer is formed with the echo area of curved surfaces and not have the residual penetrating region of photoresistance, that is the present invention only uses seven road light shields to make the thin film transistor base plate of the semi-penetrated semi-reflected liquid crystal display in tool double liquid-crystal box gap (dual cell gap).Need twice light shield exposure imaging processing procedure and a heat treatment for solidification processing procedure could organic photoresistance be formed with curved surfaces compared to prior art, that is prior art need use eight road light shields to make thin film transistor base plate.Therefore, the present invention can significantly reduce the production cost of thin film transistor base plate really, and improves its output.
In order to let above and other objects of the present invention, characteristic and the advantage can be more obvious, hereinafter will cooperate appended diagram, elaborate as follows.
Description of drawings
Figure 1A is the generalized section of the manufacturing method of film transistor base plate of prior art to Fig. 1 H;
Fig. 2 A is the generalized section of the manufacturing method of film transistor base plate of one embodiment of the invention to Fig. 2 F;
Fig. 3 is an experimental result picture of the present invention, and it shows that control hot plate heating time is 0,50,80,110 second, and through hole changes with the backfill that runs through opening; And
Fig. 4 is the generalized section of manufacturing approach of the semi-penetrated semi-reflected liquid crystal display of one embodiment of the invention.
Embodiment
Please refer to Fig. 2 A to Fig. 2 F, it shows the manufacturing method of film transistor base plate of one embodiment of the invention.
With reference to figure 2A, a substrate 121 is provided, its definition has a plurality of pixel regions, and each pixel region comprises a penetrating region 124 and an echo area 125.Utilize five road light shields that one thin-film transistor 122 and a through electrode 123 are formed on the pixel region of substrate 121.Through electrode 123 is electrically connected at thin-film transistor 122, and thin-film transistor 122 comprises a grid, a gate insulator, semi-conductor layer, one source pole, a drain electrode and a protective layer usually.With reference to figure 2B, on thin-film transistor on the substrate 121 122 and through electrode 123, form (for example coating or deposition manufacture process) photoresist layer 126 (for example organic photoresistance of eurymeric photoresist layer).With reference to figure 2C, above photoresist layer 126, utilize the 6th road light shield 127, and the photoresist layer 126 that uses higher exposure 128 will be positioned at echo area 125 and penetrating region 124 exposes to the sun simultaneously and wears.With reference to figure 2D; When a part of light beam is allowed to the non-barrier region 137 through the 6th road light shield 127, this situation can influence each other with part photoresist layer 126, after the photoresist layer 126 that has partly made public is developed; Exposed portion is removed and in echo area 125, is formed with a plurality of through holes 133 and projection 138 in regular turn; And through hole 133 partly can expose thin-film transistor 122, and penetrating region 124 is formed with one simultaneously and runs through opening 129, that is this runs through opening 129 and is positioned at this penetrating region 124; Those through holes 133 and projection 138 are arranged in regular turn and are positioned at this echo area 125, and this runs through the size of the size of opening 129 greater than this through hole 133.
With reference to figure 2E, utilize heat treatment for solidification processing procedure (the for example heat conduction of the hot blast of baking box or hot plate) that projection 138 is cured, reinvented forming curved surfaces 134 because of hot reflux (heat reflow) characteristic of photoresistance.In other words; Photoresist layer 126 produces the hot reflux phenomenon; Let less through hole 133 backfills of size (line-spacing); And the echo areas 125 that produce arc convex in projection 138 surface, size (line-spacing) is bigger runs through the penetrating region 124 that opening 129 then can be kept the former state of wearing that exposes to the sun, and only runs through opening 129 new sizes and is slightly less than life size.
According to experimental example of the present invention: 1. purpose: utilize hot plate (Hot Plate; HP) control of time; Make those through holes 133 produce the backfill phenomenon; With the projection curved surfaces of making echo area 125, and then confirm only to need one light shield exposure imaging processing procedure and a heat treatment for solidification processing procedure just can photoresist layer 126 be formed with curved surfaces 134.2. method: control hot plate heating time is 0,50,80,110 second (sec), and hot plate temperature then remains on 135 degree (135 ℃) Celsius, observes through hole 133 and changes with the backfill that runs through opening 129.3. result: as shown in Figure 3.4. conclusion: when 135 ℃ of hot plate temperatures and hot plate are equal to or greater than 110 sec heating time; The backfill state that caves in of the projection 138 of echo area 125 and through hole 133 is accord with expectation (that is outward appearance presents fringe); And the contact hole 139 of penetrating region 124 and run through opening 129 though change in size is also arranged; But do not have the photoresistance residual phenomena, so the present invention only needs really one light shield exposure imaging processing procedure and a heat treatment for solidification processing procedure just can photoresist layer 126 be formed with curved surfaces 134.
With reference to figure 2F, form a reflective metal film, utilize the 7th road light shield then, again reflective metal film is patterned to a reflecting electrode 135, and reflecting electrode 135 is formed on the curved surfaces 134 in the echo area, so to accomplish thin film transistor base plate.
The membrane according to the invention transistor base can be known; The present invention only needs one light shield exposure imaging processing procedure and a heat treatment for solidification processing procedure just can photoresist layer is formed with the echo area of curved surfaces and not have the residual penetrating region of photoresistance, that is the present invention only uses seven road light shields to make the thin film transistor base plate of the semi-penetrated semi-reflected liquid crystal display in tool double liquid-crystal box gap (dual cell gap).Need twice light shield exposure imaging processing procedure and a heat treatment for solidification processing procedure could organic photoresistance be formed with curved surfaces compared to prior art, that is prior art need use eight road light shields to make thin film transistor base plate.Therefore, the present invention can significantly reduce the production cost of thin film transistor base plate really, and improves its output.
Please refer to Fig. 4, it shows the manufacturing approach of the semi-penetrated semi-reflected liquid crystal display of one embodiment of the invention.One colored filter substrate 140 and this thin film transistor base plate 141 of the present invention are provided.Dispose a liquid crystal layer 142 between this colored filter substrate 140 and thin film transistor base plate 141, so to accomplish a liquid crystal panel 143.Dispose a module 144 backlight in these liquid crystal panel 143 belows, so to accomplish a semi-penetrated semi-reflected liquid crystal display 150.In other words; In the present embodiment; Liquid crystal panel 143 mainly comprises thin film transistor base plate 141, one liquid crystal layers 142 of the present invention and a colored optical filtering substrates 140, and liquid crystal layer 142 is disposed between semi-penetration, semi-reflective thin film transistor base plate 141 and the colored optical filtering substrates 140.Semi-penetrated semi-reflected liquid crystal display 150 mainly comprises liquid crystal panel 143 and module backlight 144; Module 144 backlight is positioned at liquid crystal panel 143 belows; The light 152 of module 144 wherein backlight through the through electrode 123 that is positioned at penetrating region 124 as light source, and external environment light 154 by the reflection of the reflecting electrode that is positioned at echo area 125 135 as light source.
In sum, be only notebook invention for presenting the execution mode or the embodiment of the technological means that adopted of dealing with problems, be not the scope that is used for limiting patent working of the present invention.Be that patent claim context all and of the present invention conforms to, or change and modification, be all claim of the present invention and contain according to the equalization that claim of the present invention is done.
Claims (10)
1. a manufacturing method of film transistor base plate is characterized in that, comprises the following step:
One substrate is provided, and its definition has a plurality of pixel regions, and each pixel region is formed with a thin-film transistor, and each pixel region comprises a penetrating region and an echo area;
Form a photoresist layer on this thin-film transistor;
Only use a light shield; This photoresist layer makes public; And the photoresist layer after this exposure of developing, so that being formed with one simultaneously, this photoresist layer runs through opening, a plurality of through hole and projection, wherein this runs through opening and is positioned at this penetrating region; Those through holes and projection are arranged in regular turn and are positioned at this echo area, and this runs through the size of the size of opening greater than this through hole; And
Utilize a heat treatment for solidification processing procedure that those projections are cured, make those projections be formed with a curved surfaces.
2. manufacturing method of film transistor base plate as claimed in claim 1; It is characterized in that; This heat treatment for solidification processing procedure makes this photoresist layer produce the hot reflux phenomenon, lets those less through hole backfills of size, larger-size this run through opening and then can keep former exposing to the sun and wear state.
3. manufacturing method of film transistor base plate as claimed in claim 1 is characterized in that, also comprises the following step: form a reflecting electrode in this curved surfaces.
4. manufacturing method of film transistor base plate as claimed in claim 1 is characterized in that, the hot blast that this heat treatment for solidification processing procedure is a baking box or the heat conduction of a hot plate.
5. manufacturing method of film transistor base plate as claimed in claim 1 is characterized in that, this photoresist layer is by a coating or a deposition manufacture process and being formed on this thin-film transistor.
6. manufacturing method of film transistor base plate as claimed in claim 1 is characterized in that, this photoresist layer is an organic photoresistance.
7. manufacturing method of film transistor base plate as claimed in claim 1 is characterized in that, those through holes partly expose this thin-film transistor.
8. the manufacturing approach of a semi-penetrated semi-reflected liquid crystal display is characterized in that, comprises the following step:
One colored filter substrate and this thin film transistor base plate as claimed in claim 2 are provided;
Dispose a liquid crystal layer between this colored filter substrate and thin film transistor base plate, so to accomplish a liquid crystal panel;
Dispose a module backlight in this liquid crystal panel below; Wherein the light of this module backlight is through this penetrating region and as light source; And external environment light by the reflection of the reflecting electrode that is positioned at this echo area as light source, so to accomplish a semi-penetrated semi-reflected liquid crystal display.
9. the manufacturing approach of semi-penetrated semi-reflected liquid crystal display as claimed in claim 8 is characterized in that, the hot blast that this heat treatment for solidification processing procedure is a baking box or the heat conduction of a hot plate.
10. the manufacturing approach of semi-penetrated semi-reflected liquid crystal display as claimed in claim 8 is characterized in that, those through holes partly expose this thin-film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103999841A CN102403271A (en) | 2011-12-06 | 2011-12-06 | Method for manufacturing film transistor substrate and transflective liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103999841A CN102403271A (en) | 2011-12-06 | 2011-12-06 | Method for manufacturing film transistor substrate and transflective liquid crystal display |
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| CN102403271A true CN102403271A (en) | 2012-04-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801926A (en) * | 2019-01-17 | 2019-05-24 | 惠科股份有限公司 | Thin film transistor substrate, preparation method thereof and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506758A (en) * | 2002-12-12 | 2004-06-23 | ������������ʽ���� | Substrate for electro-optical device, method for manufacturing the same, application thereof, and mask |
| CN101131539A (en) * | 2007-02-15 | 2008-02-27 | 友达光电股份有限公司 | Liquid crystal display panel, light reflection structure of liquid crystal display and manufacturing method thereof |
| US20090322976A1 (en) * | 2005-06-30 | 2009-12-31 | Hyun-Seok Hong | Array substrate for transflective liquid crystal display device and fabrication method thereof |
| CN101840892A (en) * | 2010-04-16 | 2010-09-22 | 华映视讯（吴江）有限公司 | Thin film transistor base plate of reflecting type liquid crystal display panel and preparation method thereof |
-
2011
- 2011-12-06 CN CN2011103999841A patent/CN102403271A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506758A (en) * | 2002-12-12 | 2004-06-23 | ������������ʽ���� | Substrate for electro-optical device, method for manufacturing the same, application thereof, and mask |
| US20090322976A1 (en) * | 2005-06-30 | 2009-12-31 | Hyun-Seok Hong | Array substrate for transflective liquid crystal display device and fabrication method thereof |
| CN101131539A (en) * | 2007-02-15 | 2008-02-27 | 友达光电股份有限公司 | Liquid crystal display panel, light reflection structure of liquid crystal display and manufacturing method thereof |
| CN101840892A (en) * | 2010-04-16 | 2010-09-22 | 华映视讯（吴江）有限公司 | Thin film transistor base plate of reflecting type liquid crystal display panel and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801926A (en) * | 2019-01-17 | 2019-05-24 | 惠科股份有限公司 | Thin film transistor substrate, preparation method thereof and display device |
| CN109801926B (en) * | 2019-01-17 | 2022-01-21 | 惠科股份有限公司 | Thin film transistor substrate, preparation method thereof and display device |
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Application publication date: 20120404 |