CN203445123U - Thin-film transistor drive backplane and display panel - Google Patents
Thin-film transistor drive backplane and display panel Download PDFInfo
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- CN203445123U CN203445123U CN201320613088.5U CN201320613088U CN203445123U CN 203445123 U CN203445123 U CN 203445123U CN 201320613088 U CN201320613088 U CN 201320613088U CN 203445123 U CN203445123 U CN 203445123U
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Abstract
The utility model relates to the field of display technology, in particular to a thin-film transistor drive backplane and a display panel. The thin-film transistor drive backplane comprises a backplane substrate with a plurality of active devices disposed inside and an electrode layer disposed on the backplane substrate. A source electrode, a drain electrode and a pixel electrode disposed integrally with the drain electrode are formed on the electrode layer. The thin-film transistor drive backplane adopts the design in which the source electrode, the drain electrode and the pixel electrode disposed integrally with the drain electrode in the same electrode layer, and the drain electrode and the pixel electrode are formed integrally, so that the reliability of the structure can be higher; the source electrode, the drain electrode and the pixel electrode can be simultaneously formed through one patterning process; and the number of patterning process can be effectively reduced, manufacturing steps are simplified and manufacturing costs are saved.
Description
Technical field
The utility model relates to Display Technique field, relates in particular to a kind of thin-film transistor and drives backboard, display floater.
Background technology
Along with the raising of people's living standard, people are also more and more higher to the requirement of display quality, and liquid crystal display (LCD) is very ripe, and mobile phone, camera, computer, TV etc. are the figure of visible LCD all.People, to showing the wilderness demand of product, have objectively promoted the development of Display Technique, and new Display Technique constantly occurs.Active matrix organic light-emitting diode (AMOLED) panel (AMOLED) is called as Display Technique of future generation, comprises that Samsung, LG, Philip all attach great importance to this new Display Technique.Except Samsung and LG, Philip, take development large scale active matrix organic light-emitting diode (AMOLED) panel product as main direction at present, Samsung SDI, Youda etc. is all to take small-medium size as developing direction.Because active matrix organic light-emitting diode (AMOLED) panel is no matter on image quality, usefulness and cost, congenital performance is all a lot of compared with TFT LCD advantage.But existing active matrix organic light-emitting diode (AMOLED) panel, especially for driving the thin-film transistor of panel video picture to drive backboard, its manufacture craft is mainly by forming figure as required in devices such as thin-film transistors on composition technique each thin layer within it, this just need to carry out repeatedly composition technique, conventionally need seven above composition techniques just can complete, and the required fund of each composition technique is very expensive; Therefore, for the making that drives backboard for thin-film transistor, the number of times that reduces composition technique is a difficult problem for its development of restriction.
Therefore, for the problems referred to above, the utility model proposes a kind of new thin-film transistor and drive backboard, display floater.
Utility model content
The purpose of this utility model is to provide a kind of thin-film transistor and drives backboard, display floater; This thin-film transistor drives backboard by source electrode, drain electrode and is with drain electrode the design realization simplification making step that the pixel electrode being wholely set is in same electrode layer together, saves the object of cost of manufacture.
The purpose of this utility model is achieved through the following technical solutions: a kind of thin-film transistor drives backboard, comprises and is provided with the backboard matrix of a plurality of active device structures and is arranged on the electrode layer on this backboard matrix; On this electrode layer, be formed with source electrode, drain electrode and be with drain electrode the pixel electrode being wholely set.
Further, described backboard matrix comprises underlay substrate, sets gradually and have semiconductor layer, the gate insulation layer of a plurality of active channels, the grid layer with a plurality of grids, isolated protective layer and interlevel dielectric layer on this underlay substrate; In described isolated protective layer and interlevel dielectric layer, be provided with a plurality of contact holes.
Further, described in each, active device includes described active channel and described grid; Described active channel comprises source contact area, drain contact region and is arranged on the raceway groove bonding pad between described source contact area and drain contact region, and described grid correspondence is arranged on described raceway groove bonding pad.
Further, described in each, described in source contact area and each, on drain contact region, be equipped with described contact hole, this contact hole runs through described interlevel dielectric layer and described isolated protective layer.
Further, described drain electrode is stretched into described contact hole and is connected with described drain contact region; Described source electrode stretches into described contact hole and is connected with described source contact area.
Further, between described underlay substrate and described semiconductor layer, be also provided with resilient coating.
Further, described electrode layer is provided with pixel defining layer.
Further, described pixel defining layer is provided with insulated column.
Further, comprise and drive backboard as the thin-film transistor as described in arbitrary in above-mentioned.
The utility model compared with prior art has advantages of following:
Thin-film transistor of the present utility model drives backboard adopt source electrode, drain electrode and be with drain electrode the design that the pixel electrode being wholely set is in same electrode layer together, and described drain electrode and pixel electrode are integrally formed, and can make the reliability of its structure higher; And source electrode, drain electrode and pixel electrode can be formed by a composition technique simultaneously; Can effectively reduce composition technique number of times, simplify making step, save cost of manufacture.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Fig. 1 is the step block diagram of the manufacture method described in the utility model;
Fig. 2 is the step schematic diagram one (main cutaway view) of manufacture method described in the utility model;
Fig. 3 is the step schematic diagram two (main cutaway view) of manufacture method described in the utility model;
Fig. 4 is the step schematic diagram three (main cutaway view) of manufacture method described in the utility model;
Fig. 5 is the step schematic diagram four (main cutaway view) of manufacture method described in the utility model;
Fig. 6 is the step schematic diagram five (main cutaway view) of manufacture method described in the utility model;
Fig. 7 is the step schematic diagram six (main cutaway view) of manufacture method described in the utility model.
Embodiment
Embodiment mono-:
Shown in Figure 1, the present embodiment provides a kind of thin-film transistor to drive the manufacture method of backboard, comprises the steps:
The described backboard matrix of concrete making specifically comprises the steps:
Shown in Figure 2, described underlay substrate 101 is carried out to clean, resilient coating 102 is set on described underlay substrate by plasma enhanced chemical vapor deposition method; Wherein, described underlay substrate consists of the good transparent material of the light transmittances such as glass, transparent plastic; Described resilient coating is set gradually and is formed by silica material layer and silicon nitride material, or the composite bed of silica material layer and silicon nitride material makes, and silica material layer thickness is 50-100 nanometer, and silicon nitride material layer thickness is 100-300 nanometer; The composite bed of described silica material layer and silicon nitride material refers to composite material bed of material when producing by a manufacturing process with silica material layer and this bi-material layer of silicon nitride material.
By plasma enhanced chemical vapor deposition method, on described resilient coating, amorphous silicon membrane is set; Wherein, described amorphous silicon membrane thickness is 40-50 nanometer; Described underlay substrate is sent in high temperature reaction stove, described amorphous silicon membrane is carried out to dehydrogenation processing; To reach the object that reduces hydrogen content in amorphous silicon membrane, generally the content of hydrogen is controlled in 2%; Described amorphous silicon membrane is carried out to quasi-molecule laser annealing processing, make described amorphous silicon membrane change polysilicon membrane, this polysilicon membrane is described semiconductor layer.
Shown in Figure 3, by this composition technique of mask lithography technique, described semiconductor layer is made to a plurality of active channels 103; Described active channel comprises 104, drain contact region, source contact area 105 and is arranged on the raceway groove bonding pad 106 between described source contact area and drain contact region.The technique of mask lithography described in the utility model comprises the operations such as photoresist coating, mask plate setting, exposure, development, etching, photoresist lift off.
Shown in Figure 3, described gate insulation layer 107 is set on described semiconductor layer by plasma enhanced chemical vapor deposition method; This gate insulation layer is the composite bed of silica material layer and silicon nitride material, and wherein, silica material layer thickness is 50-100 nanometer, and silicon nitride material layer thickness is 40-80 nanometer; This gate insulation layer, for intercepting grid and the active channel of each thin-film transistor structure, makes both when work, the signal of telecommunication can not occur and crosstalks.
Described grid layer is set on described gate insulation layer by magnetron sputtering technique; This grid layer a kind of metal in molybdenum, tungsten, titanium, chromium etc. is made, or combination in any forms alloy and makes in above-mentioned each element.
This composition technique by mask lithography technique is made a plurality of described grids 108 by described grid layer; So far a plurality of complete described active device structures that comprises described active channel and described grid has been formed on described underlay substrate;
By ion implantation technology, described active channel is carried out to dopant injection; In injection process, the described grid by being positioned at described raceway groove bonding pad top, as mask, is realized autoregistration; Described dopant is injected respectively to the described semiconductor layer that is arranged in described source contact area and place, drain contact region; Formation has described source contact area and the drain contact region of described dopant.
By activating process by the described dopant activation in described source contact area and drain contact region; So that the described dopant of the ionic forms after activation has higher locomotivity, make it automatically to fill up suitable position at the described semiconductor layer that is arranged in described source contact area and drain contact region, in order to repair the lattice defect in it.Described dopant can be divided into P type dopant and N-type dopant according to its composition difference; Corresponding different described dopant can make described active channel have different characteristics, that is to say, thin-film transistor of the present utility model drives in backboard can comprise N-type thin-film transistor and/or these two kinds of thin-film transistors of P type thin-film transistor, and every kind of described thin-film transistor includes described active channel, grid, is connected to the source electrode on described source contact area and is connected to the drain electrode on described drain contact region.
Shown in Figure 4, described isolated protective layer 109 is set on described grid layer; Specifically:
Layer of metal film is set on described grid layer by magnetron sputtering technique; This metallic film adopts the metal material that is easy to oxidation to make, for example aluminium; Illustrating of the metallic film that the material of take is below aluminium;
The described metallic film that is aluminium by material by oxidation technology is oxidized to this nonmetal film of alumina metals film, and this nonmetal film is described isolated protective layer; To play the effect of the described grid of each thin-film transistor structure in described backboard matrix being carried out to insulation blocking, to improve the stability of each thin-film transistor structure; Described oxidation technology can be selected a kind of in high-temperature oxygen stove oxidation processes or two kinds of oxidation technologies of oxygen gas plasma oxidation processes; Wherein, the reaction temperature of described high temperature oxygen steam stove oxidation processes is between 260 degrees Celsius to 320 degrees Celsius; Be preferably 300 degrees Celsius.
Shown in Figure 5, interlevel dielectric layer 110 is set on described isolated protective layer by plasma enhanced chemical vapor deposition method; This interlevel dielectric layer is the composite bed of silica material layer and silicon nitride material;
This composition technique by mask lithography technique forms a plurality of described contact holes 111 in described interlevel dielectric layer; This contact hole runs through described interlevel dielectric layer and described isolated protective layer, until the described source contact area of described active channel and described drain contact region; So far, described backboard matrix completes.
Described backboard matrix is carried out to the high temperature anneal, because resilient coating described in described backboard matrix, gate insulation layer and interlevel dielectric layer are made by silicon nitride material, therefore, the high temperature anneal can make the hydrogen diffusion (hydrogenation) in these three layers, to play the effect of repairing hydrogen dangling bonds in silicon nitride material.
By magnetron sputtering technique, on the described interlevel dielectric layer of described backboard matrix, electrode layer is set; Described electrode layer material be in the metal materials such as aluminium, titanium, silver or oxide transparent electrode material any one, or the alloy that aluminium described in above-mentioned, titanium, any several metals of silver form is made; Wherein, described oxide transparent electrode material can be the materials such as tin indium oxide, indium zinc oxide, indium oxide gallium zinc.In the utility model when described thin-film transistor drives backboard as manufacturing the end during emission type display panel, described electrode layer can be selected oxide transparent electrode material, the display floater negative electrode that light is made via metal material is reflected downwards, and see through the electrode layer of being made by oxide transparent electrode material, from display floater bottom surface, launch; Otherwise, when described thin-film transistor drives backboard as manufacture top emission type display panel, described electrode layer can be selected metal material, makes light through the upwards reflection of described electrode layer, and see through the display floater negative electrode of being made by oxide transparent electrode material, from display floater end face, launch; No matter be top emission type display panel or end emission type display panel, its operation principle and structure all belong to prior art, no longer too much repeat herein.
Mask lithography technique described in the utility model, thermal anneal process, plasma enhanced chemical vapor deposition method, activating process, ion implantation technology, the high temperature anneal, quasi-molecule laser annealing processing, magnetron sputtering technique, dehydrogenation processing and oxidation technology are all common process; Therefore, the utility model no longer specifically repeats above-mentioned each technique.
Manufacture method of the present utility model adopts by composition technique described electrode layer is made to a plurality of described source electrodes, drain electrode and is the design of the pixel electrode being wholely set with drain electrode; Make described source electrode, drain electrode and pixel electrode be in same electrode layer together; By needing in existing method, by source electrode, drain electrode and the pixel electrode of twice composition technique formation, be reduced to and only need a composition technique to complete; Greatly reduce the thickness that thin-film transistor drives backboard, simplified making step, saved cost of manufacture.
It should be noted that, all source electrodes in the utility model embodiment and drain electrode do not distinguish, and that is to say, source electrode also can be named drain electrode, and correspondingly, now drain electrode also can be source electrode.
Embodiment bis-:
It is to be made by the manufacture method described in embodiment mono-that thin-film transistor in the present embodiment drives backboard, and therefore, in embodiment mono-, disclosed technology contents is not repeated in this description, and the disclosed content of embodiment mono-also belongs to the disclosed content of the present embodiment.
Shown in Figure 7, the present embodiment provides a kind of thin-film transistor to drive backboard, by as above-mentioned described in thin-film transistor drive the manufacture method of backboard to make; This thin-film transistor drives backboard to comprise and is provided with the backboard matrix of a plurality of active device structures and is arranged on the electrode layer on this backboard matrix; On this electrode layer, be formed with a plurality of source electrodes, drain electrode and be with drain electrode the pixel electrode being wholely set.
The matrix of backboard described in the present embodiment comprises underlay substrate, sets gradually and have semiconductor layer, the gate insulation layer of a plurality of active channels, the grid layer with a plurality of grids, isolated protective layer and interlevel dielectric layer on this underlay substrate; In described interlevel dielectric layer and isolated protective layer, be provided with a plurality of contact holes.In the present embodiment, by a composition technique, described electrode layer is made to the pattern with described source electrode, drain electrode and pixel electrode; Described pixel electrode is arranged on described interlevel dielectric layer, and this pixel electrode one side and described drain electrode upper end are connected as a single entity.
The described grid that in the present embodiment, active device structures includes active channel described in one of them and is arranged on this active channel top described in each.
Active channel described in the present embodiment comprises source contact area, drain contact region and is arranged on the raceway groove bonding pad between described source contact area and drain contact region, and wherein, described grid correspondence is arranged on described raceway groove bonding pad.
Source contact area and be equipped with described contact hole on drain contact region described in each described in each in the present embodiment, this contact hole runs through described interlevel dielectric layer and described isolated protective layer.
The lower end that drains described in the present embodiment is stretched into described contact hole and is connected with described drain contact region; Described source electrode lower end is stretched into described contact hole and is connected with described source contact area.
Between underlay substrate described in the present embodiment and described semiconductor layer, be also provided with resilient coating; Described electrode layer is provided with pixel defining layer; This pixel defining layer is provided with the notch corresponding with described pixel electrode 117; So that the organic electro luminescent layer conducting of pixel electrode and active matrix organic light-emitting diode (AMOLED) panel (AMOLED, Active Matrix/Organic Light Emitting Diode); Described in the present embodiment, pixel defining layer is provided with insulated column.
The utility model is not construed as limiting the graphic scale in Fig. 7, that is to say that thin-film transistor demonstrated in Figure 7 drives backboard only as signal, limits the parameters such as its concrete specification and ratio and it goes without doing.
Embodiment tri-:
Display floater in the present embodiment is improved on the basis of the driving of thin-film transistor described in embodiment bis-backboard, and therefore, in embodiment bis-, disclosed technology contents is not repeated in this description, and the disclosed content of embodiment bis-also belongs to the disclosed content of the present embodiment.
The present embodiment provides a kind of display floater, comprises and drives backboard as the thin-film transistor described in above-mentioned.
Display floater described in the present embodiment can be active matrix organic light-emitting diode (AMOLED) panel, can be also active-matrix liquid crystal display; And this display floater is top emission type display panel; Described top emission type display panel refers to: thin-film transistor drives the electrode layer that backboard is made by employing metal material will form the upwards reflection of light of image, and penetrates by the end face of display floater; Top emission type display panel described in the present embodiment, its concrete structure and principle belong to prior art, no longer too much repeat herein.
Specifically, because thin-film transistor drives backboard only to need the required high reflectance of cremasteric reflex light, do not need it to there is high permeability, its aperture opening ratio is not required yet; Therefore, thin-film transistor drives the pixel electrode on backboard also can employing to make with source electrode and drain same metal material or oxide transparent electrode material; This is just for pixel electrode, source electrode and the drain electrode once forming in same electrode layer provides precondition; And in existing thin-film transistor driving backboard, often adopt source electrode and drain electrode to form layer of metal electrode layer by a composition technique; On this metal electrode layer, by composition technique setting for the second time, there is again the layer of transparent electrode layer of pixel electrode; This has not only increased thin-film transistor and has driven back plate thickness, and needs twice composition technique to make respectively, makes making step complicated, and has increased cost of manufacture; Therefore, thin-film transistor of the present utility model drives backboard and display floater all adopt source electrode, drain electrode and are with drain electrode the design that the pixel electrode being wholely set is in same electrode layer together, described drain electrode and pixel electrode are integrally formed, and can make the reliability of its structure higher; And source electrode, drain electrode and pixel electrode can be formed by a composition technique simultaneously; Can effectively reduce composition technique number of times, simplify making step, save cost of manufacture.
Claims (9)
1. thin-film transistor drives a backboard, it is characterized in that, comprises and is provided with the backboard matrix of a plurality of active device structures and is arranged on the electrode layer on this backboard matrix; On this electrode layer, be formed with source electrode, drain electrode and be with drain electrode the pixel electrode being wholely set.
2. thin-film transistor drives backboard as claimed in claim 1, it is characterized in that: described backboard matrix comprises underlay substrate, on this underlay substrate, set gradually and there is semiconductor layer, the gate insulation layer of a plurality of active channels, the grid layer with a plurality of grids, isolated protective layer and interlevel dielectric layer; In described isolated protective layer and interlevel dielectric layer, be provided with a plurality of contact holes.
3. thin-film transistor drives backboard as claimed in claim 2, it is characterized in that: described in each, active device includes described active channel and described grid; Described active channel comprises source contact area, drain contact region and is arranged on the raceway groove bonding pad between described source contact area and drain contact region, and described grid correspondence is arranged on described raceway groove bonding pad.
4. thin-film transistor drives backboard as claimed in claim 3, it is characterized in that: source contact area and be equipped with described contact hole on drain contact region described in each described in each, this contact hole runs through described interlevel dielectric layer and described isolated protective layer.
5. thin-film transistor drives backboard as claimed in claim 4, it is characterized in that: described drain electrode is stretched into described contact hole and is connected with described drain contact region; Described source electrode stretches into described contact hole and is connected with described source contact area.
6. thin-film transistor drives backboard as claimed in claim 5, it is characterized in that: between described underlay substrate and described semiconductor layer, be also provided with resilient coating.
7. thin-film transistor drives backboard as claimed in claim 6, it is characterized in that: described electrode layer is provided with pixel defining layer.
8. thin-film transistor drives backboard as claimed in claim 7, it is characterized in that: described pixel defining layer is provided with insulated column.
9. a display floater, is characterized in that: comprise and drive backboard as the thin-film transistor as described in arbitrary in claim 1-8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320613088.5U CN203445123U (en) | 2013-09-27 | 2013-09-27 | Thin-film transistor drive backplane and display panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320613088.5U CN203445123U (en) | 2013-09-27 | 2013-09-27 | Thin-film transistor drive backplane and display panel |
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| CN203445123U true CN203445123U (en) | 2014-02-19 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015043084A1 (en) * | 2013-09-27 | 2015-04-02 | 京东方科技集团股份有限公司 | Thin film transistor driving backplane, manufacturing method therefor, and display panel |
| WO2018120309A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市华星光电技术有限公司 | Array substrate of oled display device and manufacturing method thereof |
-
2013
- 2013-09-27 CN CN201320613088.5U patent/CN203445123U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015043084A1 (en) * | 2013-09-27 | 2015-04-02 | 京东方科技集团股份有限公司 | Thin film transistor driving backplane, manufacturing method therefor, and display panel |
| US9543415B2 (en) | 2013-09-27 | 2017-01-10 | Boe Technology Group Co., Ltd. | Thin film transistor driving backplane and manufacturing method thereof, and display panel |
| WO2018120309A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市华星光电技术有限公司 | Array substrate of oled display device and manufacturing method thereof |
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