CN109732223A - The device of wafer cutting - Google Patents
The device of wafer cutting Download PDFInfo
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- CN109732223A CN109732223A CN201910093481.8A CN201910093481A CN109732223A CN 109732223 A CN109732223 A CN 109732223A CN 201910093481 A CN201910093481 A CN 201910093481A CN 109732223 A CN109732223 A CN 109732223A
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- laser
- wafer
- spot
- reflecting mirror
- cylindrical lens
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Abstract
The invention discloses a kind of devices of wafer cutting, the device includes: laser, beam expanding lens, first reflecting mirror, second reflecting mirror, ellipse light spot orthopedic systems, third reflecting mirror, optical diffraction shaping eyeglass, focus lamp and pumping dirt equipment, the laser beam that the laser generates is after beam expanding lens expands, parallel laser light beam after being expanded, the parallel laser light beam is after the first reflecting mirror and the second reflecting mirror successively reflect, it is projected in ellipse light spot orthopedic systems, parallel laser light beam is changed into elliptical spot by ellipse light spot orthopedic systems, elliptical spot is after the reflection of third reflecting mirror, it is projected to optical diffraction shaping eyeglass, elliptical spot is shaped as N number of shaping hot spot for meeting prerequisite by optical diffraction shaping eyeglass, and it is transmitted to focus lamp, focus lamp is used to N number of shaping hot spot focusing to wafer, With cutting crystal wafer piece, dirt equipment is taken out for the residue and dust generated during cutting crystal wafer piece to be discharged, improves cutting matter quality.
Description
Technical field
The present invention relates to the devices that laser process equipment technical field more particularly to a kind of wafer are cut.
Background technique
Wafer is the basic material for making semiconductor chip, and the most important raw material of semiconductor integrated circuit is silicon, therefore right
The wafer for answering semiconductor chip is Silicon Wafer.The cutting of Silicon Wafer is an essential procedure in wafer production.
The method of laser cutting Silicon Wafer includes the full blanking method of laser, the peak value function after being focused using ultraviolet laser at present
Rate, the optical system for customization of arranging in pairs or groups achieve the effect that cut entirely from front penetration type cutting crystal wafer chip.Due to existing laser
The light beam for the laser that the full incision technology of silicon wafer uses is Gaussian beam, is cut using the full incision technology of existing laser silicon wafer
It is easy to produce a large amount of return when silicon wafer to melt substance and invest cutting inner wall, seriously affects the expansion UF membrane of wafer.
Summary of the invention
The main purpose of the present invention is to provide a kind of devices of wafer cutting, for solving existing wafer cutting skill
It is easy to produce a large amount of return when art cutting crystal wafer piece to melt substance and invest cutting inner wall, seriously affects the expansion UF membrane of wafer, influences
The technical issues of cut quality.
To achieve the above object, the present invention provides a kind of device of wafer cutting, and described device includes: laser, expands
Shu Jing, it the first reflecting mirror, the second reflecting mirror, ellipse light spot orthopedic systems, third reflecting mirror, optical diffraction shaping eyeglass, focuses
Mirror and pumping dirt equipment；
The laser is for providing laser beam, and the laser beam is after the beam expanding lens expands, after being expanded
Parallel laser light beam, the parallel laser light beam is projected to after first reflecting mirror and the second reflecting mirror successively reflect
In the ellipse light spot orthopedic systems；
The ellipse light spot orthopedic systems are used to the parallel laser light beam being changed into elliptical spot；
The elliptical spot is projected to the optical diffraction shaping eyeglass after third reflecting mirror reflection；
The optical diffraction shaping eyeglass is used to the elliptical spot being shaped as N number of shaping light for meeting prerequisite
Spot, and it is transmitted to the focus lamp；
The focus lamp is used to N number of shaping hot spot focusing to the wafer, to cut the wafer；
The pumping dirt equipment is for being discharged the residue and dust generated during cutting the wafer.
Optionally, the ellipse light spot orthopedic systems include: convex cylindrical lens and recessed cylindrical lens, the convex cylindrical lens
Optical axis and the optical axis of the recessed cylindrical lens be located along the same line, and the parallel laser light beam sequentially passes through the pillar
Face lens and the recessed cylindrical lens.
Optionally, the eyeglass focal length ratio of the convex cylindrical lens and recessed cylindrical lens meets following condition:
Wherein, f1For the focal length of convex cylindrical lens, f2For the focal length of recessed cylindrical lens.
Optionally, described device further includes image monitoring, the image monitoring be used for the wafer into
Row positioning.
Optionally, the laser is ultraviolet nanosecond laser, and the average output power of the ultraviolet nanosecond laser is small
In 12 watts, repetition rate is 10 kHz~40 kHz, and pulse width is 30 nanoseconds~70 nanoseconds.
Optionally, described device further includes motion stage, be provided on the motion stage can coaxial rotating vacuum inhale
Attached component, the vacuum suction component is for fixing the wafer.
Optionally, described device further includes motor；
The motor is for driving the motion stage to move along preset direction.
Optionally, the suction opening for taking out dirt equipment is arranged towards the position that the residue and dust project.
Optionally, the optical axis of the optical diffraction shaping eyeglass, the focus lamp and the image monitoring is respectively positioned on
On same straight line.
From the wafer of above-mentioned offer cut device it is found that in a first aspect, the device have ellipse light spot orthopedic systems,
Spot shaping in laser is elliptical spot by ellipse light spot orthopedic systems, and the hot spot of laser is in Gaussian Profile, warp before shaping
After ellipse light spot orthopedic systems are shaped as ellipse light spot, in the case where the scanning speed of laser and constant output frequency, increase
Big laser beam overlap ratio, increases the depth of laser cutting, meanwhile, optical diffraction shaping eyeglass is further by ellipse light spot shaping
Ellipse light spot after system shaping is converted into the small light spot of multiple identical energies, increases effectively hot spot distribution length, thus into
One step increases laser cutting-in；The pumping dirt equipment of second aspect, device setting arranges the residue generated in cutting process and dust
Out, cut quality is improved.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those skilled in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of the device of wafer cutting provided in an embodiment of the present invention；
Fig. 2 is ellipse light spot Duplication schematic illustration；
Fig. 3 is the dimensions schematic diagram of two cylindrical lenses of ellipse light spot orthopedic systems；
Fig. 4 is the dimensions schematic diagram of vertical more luminous point DOE eyeglasses；
Fig. 5 is vertical more luminous point DOE incision principle schematic diagrames；
Fig. 6 is cutting surfaces effect picture.
Specific embodiment
In order to make the invention's purpose, features and advantages of the invention more obvious and easy to understand, below in conjunction with the present invention
Attached drawing in embodiment, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described reality
Applying example is only a part of the embodiment of the present invention, and not all embodiments.Based on the embodiments of the present invention, those skilled in the art
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Melt substance since existing wafer cutting technique is easy to produce a large amount of return in cutting crystal wafer piece and invest in cutting
The technical issues of wall seriously affects the expansion UF membrane of wafer, influences cut quality.In order to solve the above-mentioned technical problem, of the invention
It is proposed a kind of device of wafer cutting.
Referring to Fig. 1, for a kind of structural schematic diagram of the device of wafer cutting provided in an embodiment of the present invention.The device
It include: laser 1, beam expanding lens 2, the first reflecting mirror 3, the second reflecting mirror 4, ellipse light spot orthopedic systems 5, third reflecting mirror 6, light
It learns diffraction shaping eyeglass 7, focus lamp 8 and takes out dirt equipment 9；
Specifically, laser 1 is for providing laser beam, for laser beam after beam expanding lens 2 expands, what is expanded is parallel
It is whole to be projected to ellipse light spot after the first reflecting mirror 3 and the second reflecting mirror 4 successively reflect for laser beam, the parallel laser light beam
In shape system 5.
Wherein, laser 1 generate laser be Gaussian beam, Gaussian beam present Gaussian spot central light strength compared with
Height, surrounding light intensity gradually decrease.Laser beam before entering ellipse light spot orthopedic systems 5 is carried out beam-expanding collimation by beam expanding lens 2,
Spot shaping effect is optimized, focal beam spot diameter is reduced.
Ellipse light spot orthopedic systems 5 are used to the parallel laser light beam being changed into elliptical spot, elliptical spot warp
After third reflecting mirror 6 reflects, it is projected to optical diffraction shaping eyeglass 7.Wherein, ellipse light spot orthopedic systems 5 are whole by Gaussian spot
Shape is the elliptical spot with identical aspect ratio.
Optical diffraction shaping eyeglass 7 is used to elliptical spot being shaped as N number of shaping hot spot for meeting prerequisite, and passes
Transport to focus lamp 8.Wherein, laser shaping is that N number of size for being distributed is identical in vertical direction by optical diffraction shaping eyeglass 7, energy
Consistent elliptical spot is measured, and N number of laser beam is transmitted to focus lamp 8.
Focus lamp 8 is used to N number of shaping hot spot focusing to wafer 10, and with cutting crystal wafer piece 10, focus lamp 8 will be N number of
Elliptical spot focuses to wafer, and the position that N number of elliptical spot focuses in wafer, the material of wafer is vaporized, complete
It is separated at cutting.
Dirt equipment 9 is taken out for the residue and dust generated during cutting crystal wafer piece to be discharged.
Wherein, cutting crystal wafer piece during, the cutting position of wafer can generate residue and dust, take out dirt equipment
9 remove the residue of generation and dust, improve cut quality.
Wherein, the suction opening for taking out dirt equipment 9 is arranged towards the position that residue and dust project, to facilitate pumping dirt equipment 9 will
Residue and dust discharge.
It should be noted that taking out dirt equipment is the dust type and distribution generated according to ultraviolet laser and wafer effect
Region is made in conjunction with hydrodynamics special designing.The pumping dirt equipment can be eliminated to be acted in process laser and wafer
The flue dust of generation is to the absorption of laser intensity and the uniformity of Laser beam energy distribution, to optimizing incision effect and cutting effect
Rate.
Optionally, wafer 10 is silicon wafer.
As shown in Fig. 2, Fig. 2 is ellipse light spot Duplication schematic illustration, can effectively be drawn in the direction x using elliptical spot
Long spot size is keeping scanning speed and output frequency unanimous circumstances, is increasing laser beam overlap ratio, cut to increase laser
It is deep, while the energy density of unit hot spot is reduced, optimize spot energy distribution gradient, to reduce laser to the hot shadow of material
It rings.
Further, ellipse light spot orthopedic systems 5 include convex cylindrical lens 501 and recessed cylindrical lens 502, convex cylindrical lens
501 and the optical axis of recessed cylindrical lens 502 be located along the same line, and parallel laser light beam sequentially passes through 501 He of convex cylindrical lens
Recessed cylindrical lens 502.
Wherein, the eyeglass focal length ratio of convex cylindrical lens 501 and recessed cylindrical lens 502 meets following condition:
Wherein, f1For the focal length of convex cylindrical lens 501, f2For the focal length of recessed cylindrical lens 502, f1And f2It is in X-direction
Focal length.The eyeglass focal length ratio of convex cylindrical lens 501 and recessed cylindrical lens 502 meets above-mentioned condition, can be by laser beam
Gaussian spot is changed into the elliptical spot with identical aspect ratio.
Wherein, the length-width ratio of elliptical spot is saturating by the focal length and convex cylindrical lens 501 of convex cylindrical lens 501 and recessed cylinder
The distance between mirror 502 determines.The focal length or convex cylindrical lens 501 of change convex cylindrical lens 501 and recessed cylindrical lens can be passed through
The distance between 502 change the length-width ratio of elliptical spot.
It should also be noted that, the angle for the elliptical spot that 5 shaping of ellipse light spot orthopedic systems goes out can be according to pillar face
Relative angle between lens 501 and recessed cylindrical lens 502 changes.
As shown in figure 3, Fig. 3 is the dimensions schematic diagram of two cylindrical lenses of ellipse light spot orthopedic systems, pillar face
Lens 501 and the bed-plate dimension of recessed cylindrical lens 502 are all the same, in embodiments of the present invention, convex cylindrical lens 501 and recessed cylinder
The bed-plate dimension of lens 502 is 20 millimeters * 20 millimeters, and 501 lens edge thickness of convex cylindrical lens is 4 millimeters, and center of lens is thick
Degree be 5 millimeters, recessed 502 edge thickness of cylindrical lens be 6.5 millimeters, lens center thickness be 5 millimeters, the two of above-mentioned dimensions
A cylindrical lens eyeglass focal length ratio meets prerequisite.
Optionally, optical diffraction shaping eyeglass 7 is vertical more luminous point diffraction optical element (Diffractive Optical
Elements, DOE) eyeglass 9, as shown in figure 4, Fig. 4 is the dimensions schematic diagram of vertical more luminous point DOE eyeglasses, vertical mostly light
Point DOE lens thickness is 5 millimeters, and basal diameter is 25.4 millimeters, and vertical more luminous point DOE eyeglasses will have been subjected to ellipse light spot shaping
The laser shaping that system 5 is shaped as ellipse light spot is that multiple sizes for being distributed are identical in vertical direction, the elliptical light of energy coincidence
Spot.
It should be noted that the distribution of the distance between vertical more luminous points can according to vertical more luminous point DOE lens prescriptions and
The focal length of focus lamp 8 changes.
As shown in figure 5, Fig. 5 is vertical more luminous point DOE incision principle schematic diagrames, can be incited somebody to action using vertical more luminous point DOE eyeglasses
Hot spot is converted into the small light spot of multiple identical energies of vertical distribution, effectively increases the distribution length of hot spot in vertical direction,
To significantly increase laser cutting-in.
Further, as shown in Figure 1, the device further includes motion stage 11, being provided on motion stage 11 coaxially to revolve
Turn vacuum suction component 12, the vacuum suction component is for fixing wafer 10.
Wherein, 12 360 deg rotating displaying of vacuum suction component, wafer 10 to be processed are fixed by vacuum suction component 12
On motion stage 11, wafer 10 can be accurately positioned by 12 coaxial rotating of vacuum suction component, improve wafer 10
Cutting accuracy, while using motion stage 11 to wafer 10 carry out loading and unloading.
Further, which further includes motor, and motor is for driving motion stage 11 to move along preset direction.
Wherein, motor is not shown in the device of Fig. 1, and motion stage 11 can move in X-direction or Y-direction, and motor drives
Dynamic motion stage 11 moves in X-direction or Y-direction, finds the cutting position of wafer, improves cutting accuracy.
Further, laser 1 be ultraviolet nanosecond laser, ultraviolet nanosecond laser average output power less than 12 watts,
Repetition rate is 10 kHz~40 kHz, and pulse width is 30 nanoseconds~70 nanoseconds.This kind of ultraviolet nanosecond laser has
The material of wafer can directly be gasified when acting on wafer, can reduce heat by higher single pulse energy (≤1100 μ J)
Influence area obtains preferable upper and lower surfaces and inner wall edge effect.
Further, which further includes image monitoring 13, and image monitoring 13 is used to carry out wafer 10
Positioning.
Wherein, image monitoring 13 can obtain the image including wafer placement location.Image monitoring 13 passes through
Image positions wafer, so that wafer is moved to cutting position, improves cutting accuracy.
Optionally, image monitoring 13 is coaxial CCD image monitoring.
Further, the optical axis of optical diffraction shaping eyeglass 7, focus lamp 8 and image monitoring 13 is respectively positioned on always
On line, so that elliptical spot is transmitted.
Further, focus lamp 8 is short focus focus lamp, so that focus lamp 8 is smaller at a distance from wafer.
Further, optical diffraction shaping eyeglass, the convex cylindrical lens and recessed cylindrical lens are by ultraviolet vitreous silica
Material is made.
In embodiments of the present invention, cutting is Si wafer using wafer sheet material, and motion stage 11 is X-Y motion ceramics
Silicon wafer to be processed is fixed on X-Y ceramic sports microscope carrier by microscope carrier through vacuum suction component, the light beam warp that laser issues
After beam expanding lens, widened parallel laser light beam is obtained, it is oval by vertically being injected after the first reflecting mirror and the reflection of the second reflecting mirror
In spot shaping system, ellipse light spot after outgoing is last whole through in third reflecting mirror vertical incidence vertically more luminous point DOE eyeglasses
Shape hot spot focuses on silicon wafer sample surfaces via short focus focus lamp, and instant vaporization material separates basis material, raw
At residue, dust via strength take out the discharge of dirt equipment, cut quality is further enhanced, coaxial CCD image control system
It accurately controls laser cutting position and cutting effect is monitored in real time.In cutting process, laser beam focus focus
Position is constant, and motor adds X-Y motion microscope carrier that silicon wafer is driven to carry out X and Y-direction movement, as shown in fig. 6, Fig. 6 is cutting surfaces
Effect picture, microscope carrier move back and forth in X-direction, complete the cutting processing to single Cutting Road, then move crystal grain step pitch in Y-direction,
It after the cutting for realizing different Cutting Roads, completes to cut the face A, after processing is completed to the face A, microscope carrier rotates 90 ° and arrives the face B, and use is identical
Processing method carries out cutting processing to the face B, is finally completed the laser cutting processing procedure to full wafer wafer.
Silicon wafer in the embodiment of the present invention with a thickness of 200 microns, particle size is 1000 microns × 1000 microns,
Having a size of 4 inches.
It should also be noted that, being 25~30 minutes using the time that the device completes the cutting of whole piece wafer.
The structure of the device cut from Fig. 1 wafer provided in an embodiment of the present invention is it is found that in a first aspect, the device has
Spot shaping in laser is elliptical spot, laser before shaping by ellipse light spot orthopedic systems, ellipse light spot orthopedic systems
Hot spot is in Gaussian Profile, after ellipse light spot orthopedic systems are shaped as ellipse light spot, in the scanning speed and output frequency of laser
In the case that rate is constant, laser beam overlap ratio is increased, increases the depth of laser cutting, meanwhile, optical diffraction shaping eyeglass is into one
Step ground converts the ellipse light spot after ellipse light spot orthopedic systems shaping to the small light spot of multiple identical energies of vertical distribution, has
Effect increases the distribution length of hot spot in vertical direction, to further increase laser cutting-in；Second aspect, device setting
Pumping dirt equipment the residue generated in cutting process and dust are discharged, improve cut quality.
The above are the descriptions of the device to a kind of wafer cutting provided by the present invention, for those skilled in the art
Member, thought according to an embodiment of the present invention, there will be changes in the specific implementation manner and application range, to sum up, this theory
Bright book content should not be construed as limiting the invention.
Claims (9)
1. a kind of device of wafer cutting, which is characterized in that described device include: laser, beam expanding lens, the first reflecting mirror,
Second reflecting mirror, ellipse light spot orthopedic systems, third reflecting mirror, optical diffraction shaping eyeglass, focus lamp and pumping dirt equipment；
For the laser for providing laser beam, the laser beam is flat after being expanded after the beam expanding lens expands
Row laser beam, the parallel laser light beam are projected to described after first reflecting mirror and the second reflecting mirror successively reflect
In ellipse light spot orthopedic systems；
The ellipse light spot orthopedic systems are used to the parallel laser light beam being changed into elliptical spot；
The elliptical spot is projected to the optical diffraction shaping eyeglass after third reflecting mirror reflection；
The optical diffraction shaping eyeglass is used to the elliptical spot being shaped as N number of shaping hot spot for meeting prerequisite,
And it is transmitted to the focus lamp；
The focus lamp is used to N number of shaping hot spot focusing to the wafer, to cut the wafer；
The pumping dirt equipment is for being discharged the residue and dust generated during cutting the wafer.
2. the apparatus according to claim 1, which is characterized in that the ellipse light spot orthopedic systems include: convex cylindrical lens
With recessed cylindrical lens, the optical axis of the optical axis of the convex cylindrical lens and the recessed cylindrical lens is located along the same line, and described
Parallel laser light beam sequentially passes through the convex cylindrical lens and the recessed cylindrical lens.
3. the apparatus of claim 2, which is characterized in that the eyeglass focal length of the convex cylindrical lens and recessed cylindrical lens
Ratio meets following condition:
Wherein, f1For the focal length of convex cylindrical lens, f2For the focal length of recessed cylindrical lens.
4. the apparatus according to claim 1, which is characterized in that described device further includes image monitoring, the image
Monitoring system is for positioning the wafer.
5. the apparatus according to claim 1, which is characterized in that the laser is ultraviolet nanosecond laser, described ultraviolet
For the average output power of nanosecond laser less than 12 watts, repetition rate is 10 kHz~40 kHz, and pulse width is received for 30
Second~70 nanoseconds.
6. the apparatus according to claim 1, which is characterized in that described device further includes motion stage, the motion stage
On be provided with can coaxial rotating vacuum suction component, the vacuum suction component is for fixing the wafer.
7. device according to claim 6, which is characterized in that described device further includes motor；
The motor is for driving the motion stage to move along preset direction.
8. the apparatus according to claim 1, which is characterized in that the suction opening for taking out dirt equipment is towards the residue and powder
The position setting that dirt projects.
9. according to claim 1 to device described in 8 any one, which is characterized in that the optical diffraction shaping eyeglass, described
The optical axis of focus lamp and the image monitoring is respectively positioned on same straight line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910093481.8A CN109732223A (en) | 2019-01-30 | 2019-01-30 | The device of wafer cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910093481.8A CN109732223A (en) | 2019-01-30 | 2019-01-30 | The device of wafer cutting |
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| CN109732223A true CN109732223A (en) | 2019-05-10 |
Family
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| CN201910093481.8A Pending CN109732223A (en) | 2019-01-30 | 2019-01-30 | The device of wafer cutting |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110977205A (en) * | 2019-12-20 | 2020-04-10 | 武汉华工激光工程有限责任公司 | Blind hole machining rotary cutting system and blind hole machining method |
| CN110977188A (en) * | 2019-11-03 | 2020-04-10 | 武汉光谷航天三江激光产业技术研究有限公司 | Multi-focus wafer internal cutting device based on spatial light modulator |
| CN111451646A (en) * | 2020-04-24 | 2020-07-28 | 苏州镭明激光科技有限公司 | Processing technology for laser invisible cutting of wafer |
| CN111940926A (en) * | 2020-08-18 | 2020-11-17 | 深圳中科光子科技有限公司 | Glass cover plate cutting equipment and cutting method thereof |
| CN112719635A (en) * | 2020-12-28 | 2021-04-30 | 武汉华工激光工程有限责任公司 | Method and device for cutting transparent brittle material |
| CN113523586A (en) * | 2020-04-16 | 2021-10-22 | 大族激光科技产业集团股份有限公司 | Laser cutting method, laser cutting device and storage medium |
| CN113878246A (en) * | 2021-10-28 | 2022-01-04 | 上海波刺自动化科技有限公司 | Laser processing head |
| CN114018900A (en) * | 2021-11-15 | 2022-02-08 | 中国工程物理研究院材料研究所 | Raman spectrometer |
| CN117277037A (en) * | 2023-11-21 | 2023-12-22 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooling-free laser and output method |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110977188A (en) * | 2019-11-03 | 2020-04-10 | 武汉光谷航天三江激光产业技术研究有限公司 | Multi-focus wafer internal cutting device based on spatial light modulator |
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| CN113523586A (en) * | 2020-04-16 | 2021-10-22 | 大族激光科技产业集团股份有限公司 | Laser cutting method, laser cutting device and storage medium |
| CN113523586B (en) * | 2020-04-16 | 2022-12-30 | 大族激光科技产业集团股份有限公司 | Laser cutting method, laser cutting device and storage medium |
| CN111451646A (en) * | 2020-04-24 | 2020-07-28 | 苏州镭明激光科技有限公司 | Processing technology for laser invisible cutting of wafer |
| CN111940926A (en) * | 2020-08-18 | 2020-11-17 | 深圳中科光子科技有限公司 | Glass cover plate cutting equipment and cutting method thereof |
| CN112719635A (en) * | 2020-12-28 | 2021-04-30 | 武汉华工激光工程有限责任公司 | Method and device for cutting transparent brittle material |
| CN113878246A (en) * | 2021-10-28 | 2022-01-04 | 上海波刺自动化科技有限公司 | Laser processing head |
| CN114018900A (en) * | 2021-11-15 | 2022-02-08 | 中国工程物理研究院材料研究所 | Raman spectrometer |
| CN114018900B (en) * | 2021-11-15 | 2023-07-25 | 中国工程物理研究院材料研究所 | Raman spectrometer |
| CN117277037A (en) * | 2023-11-21 | 2023-12-22 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooling-free laser and output method |
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Application publication date: 20190510 |
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