CN104117775B - Crack generation method, cutting method using laser and crack generation device - Google Patents
Crack generation method, cutting method using laser and crack generation device Download PDFInfo
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- CN104117775B CN104117775B CN201410160380.5A CN201410160380A CN104117775B CN 104117775 B CN104117775 B CN 104117775B CN 201410160380 A CN201410160380 A CN 201410160380A CN 104117775 B CN104117775 B CN 104117775B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Abstract
The invention provides a crack generation method for generating microcracks according to a material of a to-be-processed object, a cutting method using a laser and a crack generation device. A first light pulse is radiated from a first laser source to the to-be-processed object, so that a first area in which the temporarily-increased light absorption rate is formed along a preset line preset in advance inside the to-be-processed object. The first light pulse has a preset first pulse width and light intensity which enables the material of the to-be-processed object to generate multiphoton absorption. Before the temporarily-increased light absorption rate of the first area is recovered, a second light pulse is radiated onto at least one part of the first area from a second laser source and is absorbed. Thus, cracks are formed in the to-be-processed object along the preset line preset in advance. The second light pulse has light intensity which prevents the material of the to-be-processed object from generation multiphoton absorption with respect to the material of the to-be-processed object and has a second pulse width larger than the first pulse width.
Description
Technical field
The present invention relates to crackle generation method, the cutting method using laser and crackle generating means, more particularly to energy
It is enough according to the material of workpiece to generate the crackle generation method of microcrack, using the cutting method and crackle of laser
Generating means.
Background technology
It is known to have following technology：If in the inside of transparent material, short light pulse of the optically focused from pulse width relative narrower
Source such as pulse width is femtosecond（fs）The light pulse of the femtosecond laser of level is washed off from the relatively wide long pulse of pulse width
Source such as pulse width is nanosecond（ns）Light pulse of nanosecond laser etc. of level forming focal point, and by near the focal point
Electric-field intensity is set to high condition, then can produce Multiphoton Absorbtion, and the energy of the light pulse can be injected to transparent material.
And, modification region can be formed in material using the energy of the injection, so in semiconductor material substrate, piezoelectric base
The inside of plate or glass substrate etc. continuously or discontinuously forms such modification region and for cutting.
In patent document 1, cutting technique having used above-mentioned technology, having used laser is disclosed.Patent document 1
Invention is configured to：Modification region is internally formed in workpiece using the femtosecond laser of initial irradiation, using next photograph
The femtosecond laser penetrated temporarily forms the higher region of absorptivity, further by the area illumination higher to the absorptivity
Nanosecond laser simultaneously makes it absorb to be heated, using the thermal expansion generated by the heating come with above-mentioned modification region for
Point is cut off.
Patent document 1：Japanese Unexamined Patent Publication 2013-022627 publications
Modification region refers to the region with the variations in refractive index of material, but in order to carry out the cutting of fine, preferably exists
Include fine crackle in the modification region.With regard to this point, in the cutting technique for having used laser disclosed in patent document 1
In, it is not intended to be configured to the modification Area generation crackle producing using the initially femtosecond laser of irradiation.In addition, without root
The light output of nanosecond laser is set as the idea of appropriate value according to the material of workpiece, so workpiece does not have into
For appropriate heated condition, therefore, the invention of patent document 1 does not become the invention for generating microcrack and performing cutting.
If not generating crackle, the starting point that cannot function as cutting when there is the thermal expansion after fully plays a role,
And the situation for being difficult to cut according to material.Even if in addition, assume to generate crackle, but also because generation microcrack can not be formed
Condition, so cut surface is coarse.Therefore, on this point of the cutting of fine is carried out for various materials exist more than improving
Ground.
On the other hand, in the case where microcrack is generated, for irradiation laser condition according to material it is different and not
Together, for example soda-lime glass is made to generate microcrack using femtosecond laser highly difficult.This is because the generation of microcrack and material
Temperature Distribution, the duration of temperature after interior absorption laser or the thermal expansion caused by these（That is, the thermal characteristics of material）
Relevant, the light pulse projected from femtosecond laser is by the light arteries and veins in relatively small energy injection to material in the extremely short time
, on this point of giving the condition of material heat, there is inappropriate situation according to material difference in punching.It is noted that, on
The microcrack stated also includes not becoming the crack of tiny holes degree.
In addition, from nanosecond laser light pulse compared with from the light pulse of femtosecond laser with larger energy, if
Electric-field intensity and is set to high condition at optically focused by ground identical with femtosecond laser, then can also produce Multiphoton Absorbtion, but for this
Need the device that larger high price is exported using laser.Even if in addition, in the case where assuming using such device, there is also
Big crackle, coarse cut surface, fragment generation, the yield rate reduction of chip more than needs is produced because the energy of pulse is excessive
The problems such as.
The content of the invention
The present invention is completed to solve above-mentioned problem, it is therefore intended that offer is a kind of can be according to workpiece
Material is generating crackle generation method, the cutting method using laser and the crackle generating means of microcrack.
To achieve these goals, the crackle generation method described in technical scheme 1 is following method：From first laser light
The first light pulse is irradiated in source to workpiece, so as in the inside of above-mentioned workpiece along set in advance predetermined linear
Into the first area that absorptivity is temporarily uprised, first light pulse has the first pulse width set in advance and makes above-mentioned
The material of workpiece produces the luminous intensity of Multiphoton Absorbtion, and the above-mentioned first area temporarily uprised in absorptivity
Absorptivity restore before, the second light pulse is irradiated at least a portion of above-mentioned first area from second laser light source and is made
It absorbs the second light pulse, and crackle, second light are generated in above-mentioned workpiece along above-mentioned preset lines set in advance
Pulse is set in advance with the material for above-mentioned workpiece not to make the material of above-mentioned workpiece produce light more
Luminous intensity and second pulse width wider than above-mentioned first pulse width that son absorbs.
In addition, the invention described in technical scheme 2 is following invention：In the invention described in technical scheme 1, from above-mentioned
Second laser light source irradiate above-mentioned second light pulse be instigate above-mentioned second light pulse and above-mentioned first light pulse in time and
Overlap to irradiate above-mentioned second light pulse at least one party spatially.
In addition, the invention described in technical scheme 3 is following invention：In sending out described in technical scheme 1 or technical scheme 2
In bright, above-mentioned second pulse width is set to and above-mentioned second laser light when can generate crackle in above-mentioned workpiece
The corresponding value of minimum pulse width in the pulse width in source.
In addition, the invention described in technical scheme 4 is following invention：Any one in technical scheme 1 to technical scheme 3
In described invention, the peak delay time set in advance of above-mentioned first light pulse of peakedness ratio of above-mentioned second light pulse.
In addition, the invention described in technical scheme 5 is following invention：Any one in technical scheme 1 to technical scheme 4
In described invention, based in the thermal coefficient of expansion of the material of above-mentioned workpiece, pyroconductivity and Young's modulus
At least one setting above-mentioned second pulse width.
In addition, the invention described in technical scheme 6 is following invention：Any one in technical scheme 1 to technical scheme 5
In described invention, it is with above-mentioned first light pulse of the inside optically focused of above-mentioned workpiece to irradiate above-mentioned first light pulse
Mode being irradiated, it is with above-mentioned second light of the inside optically focused of above-mentioned workpiece to irradiate above-mentioned second light pulse
The mode of pulse controls above-mentioned first light pulse and above-mentioned second smooth arteries and veins come what is be irradiated according to the direction for generating crackle
At least one in the size of the optically focused part of punching, shape and number.
In addition, the invention described in technical scheme 7 is following invention：In the invention described in technical scheme 6, above-mentioned
The shape of the above-mentioned optically focused part of two light pulses is elliptical shape, and the oval major axis is flat with above-mentioned preset lines set in advance
OK.
In addition, the invention described in technical scheme 8 is following invention：In the invention described in technical scheme 6, above-mentioned
The number of the above-mentioned optically focused part of two light pulses is multiple, and the straight line for linking the center of each optically focused part presets with above-mentioned
Preset lines it is parallel.
On the other hand, to achieve these goals, the cutting method of the utilization laser described in technical scheme 9 is such as lower section
Method：Using the crackle generation method described in any one in technical scheme 1 to technical scheme 8, and set in advance along above-mentioned
Fixed preset lines carry out the cutting of above-mentioned workpiece.
Also, to achieve these goals, the crackle generating means described in technical scheme 10 include：First laser light
Source, projects the light of pulse type；Second laser light source, projects the light of pulse type；Irradiation control unit, it is sharp from above-mentioned first according to making
Radiant controls above-mentioned first laser light source to the mode that workpiece irradiates the first light pulse, so that right in above-mentioned processing
As the first area that absorptivity is temporarily uprised that is internally formed of thing, first light pulse has the first pulse width set in advance
Degree and the material of workpiece is set to produce the luminous intensity of Multiphoton Absorbtion, also, according to temporarily uprising in absorptivity
Above-mentioned first area absorptivity restore before, make from second laser light source to shine at least a portion of above-mentioned first area
The mode for penetrating the second light pulse controls above-mentioned second laser light source, so as to generate crackle, second light in above-mentioned workpiece
Pulse is set in advance with the material for above-mentioned workpiece not to make the material of above-mentioned workpiece produce light more
Luminous intensity and second pulse width wider than the first pulse width that son absorbs；And mobile unit, make above-mentioned processing object
Thing and above-mentioned first laser light source and the movement of at least one party in above-mentioned second laser light source, so that along set in advance
Preset lines are irradiated from above-mentioned first light pulse of above-mentioned first laser light source and from the above-mentioned of above-mentioned second laser light source
Second light pulse.
According to the present invention, playing can provide the crackle that microcrack can be generated according to the material of workpiece life
Into the effect of method, the cutting method using laser and crackle generating means.Description of the drawings
Fig. 1 is the block diagram of an example of the structure for representing the crackle generating means involved by embodiment.
Fig. 2 is the process chart of the step of representing the crackle generation method involved by first embodiment.
Fig. 3 is to represent the light pulse from femtosecond laser involved by first embodiment and the light arteries and veins from nanosecond laser
The schematic diagram of the time relationship of punching.
Fig. 4 is to represent that the crackle involved by first embodiment generates the mould diagram of state.
Fig. 5 is represented the change of the absorptivity being mapped to from the illumination of femtosecond laser in the case of soda-lime glass
Figure.
Fig. 6 is represented the figure of the change of the absorptivity being mapped to from the illumination of femtosecond laser in the case of SiC.
Fig. 7 be represent the pulse width of the light pulse from nanosecond laser in the case where workpiece is SiC with
Crackle produces the figure of the relation between probability.
Fig. 8 is to represent thermal coefficient of expansion and between the minimum pulse width for cracking of the light pulse of nanosecond laser
Relation figure.
Fig. 9 is represented relative to the time delay of the light pulse from nanosecond laser of the light pulse from femtosecond laser
It is set to 0.25ns and by the figure of the change of the absorptivity being mapped to from the illumination of generating device of laser in the case of soda-lime glass.
Figure 10 be represent by relative to the light pulse from femtosecond laser from the delay of the light pulse of nanosecond laser when
Between be set to 0.05ns and by the change of the absorptivity being mapped to from the illumination of generating device of laser in the case of soda-lime glass
Figure.
Figure 11 is for illustrating between the focal beam spot of femtosecond laser and the focal beam spot of nanosecond laser and direction of check
Relation schematic diagram.
Figure 12 is for illustrating between the focal beam spot of femtosecond laser and the focal beam spot of nanosecond laser and direction of check
Relation schematic diagram.
Figure 13 is for illustrating between the focal beam spot of femtosecond laser and the focal beam spot of nanosecond laser and direction of check
Relation schematic diagram.
Figure 14 is for illustrating between the focal beam spot of femtosecond laser and the focal beam spot of nanosecond laser and direction of check
Relation schematic diagram.
Description of reference numerals：10 ... crackle generating means；12 ... generating device of laser；14 ... short-pulse light sources（Femtosecond swashs
Light）；16 ... long pulse light sources（Nanosecond laser）；18th, 24 ... 1/2 wavelength plates；20 ... speculums；22 ... delay loops；22a、
22b ... speculums；26…PBS；28 ... beam diameter adjusters；30 ... two tropism filters；32 ... collector lenses；34…XYZ
Coordinate table；36 ... CCD cameras；38 ... control units；40 ... workpieces；42 ... card for laser control unit；L ... laser；SL ... is in advance
The preset lines of setting；
Specific embodiment
Hereinafter, embodiments of the present invention are described in detail referring to the drawings, before this to the base of present embodiment
This idea is illustrated.
As described above, the cutting in order to carry out fine, preferably makes to include fine crackle in modification region.However,
In having used the cutting of laser, even if it is fine to be separately also difficult to generation using short-pulse laser or Long Pulse LASER
Crackle.
Therefore, in the present embodiment, weighed in time or spatially with Long Pulse LASER by making short-pulse laser
The light of the Long Pulse LASER to absorb the low optical power that can not be individually absorbed is irradiated foldedly.
That is, in the present embodiment, using the light advanced with from the relatively small short-pulse laser of energy
Temporarily to improve the absorptivity of material, the region that absorptivity has been uprised is set to absorb the side of the light from Long Pulse LASER
Method.Therefore, also can be absorbed even if Long Pulse LASER is the low optical power that can not be individually absorbed.
Thereby, it is possible to freely select the luminous power and pulse width of the Long Pulse LASER of absorption, Neng Gouwei according to material
Microcrack is generated according to material and by the luminous power and pulse width set of Long Pulse LASER it is appropriate condition.Namely
Say, can adjust by using Long Pulse LASER afterwards using short-pulse laser as being used to absorb " opportunity " of Long Pulse LASER
Appropriate heating state, thermal expansion condition are generating microcrack.Now, from Long Pulse LASER light pulse pulse width
Narrower crackle is thinner, thus can also using the minimum pulse width for cracking as the light pulse of Long Pulse LASER pulse width
Spend to be set.
[first embodiment]
With reference to Fig. 1, the structure of the crackle generating means 10 involved by present embodiment is illustrated.
Crackle generating means 10 include generating device of laser 12, beam diameter adjuster 28, two tropism filters 30, optically focused
Lens 32, XYZ coordinate platform 34, CCD camera 36 and control unit 38 and constitute.
The laser L projected from generating device of laser 12 passes through beam diameter adjuster 28, two tropism filters 30 and gathers
Optical lens 32, is irradiated to the workpiece 40 being maintained on XYZ coordinate platform 34.
Generating device of laser 12 includes short-pulse light source 14 as first laser light source, 1/2 wavelength plate 18, as second
The long pulse light source 16 of LASER Light Source, speculum 20, delay loop 22,1/2 wavelength plate 24, PBS（polarization beam
splitter：Polarization beam apparatus）26 and card for laser control unit 42 and constitute.
Generating device of laser 12 is configured to make short-pulse light source 14 and long pulse light source 16 separately vibrate,
Short-pulse light source 14 and long pulse light source 16 can also synchronously vibrated.In addition, generating device of laser 12 can adjust from
The peak value of the light pulse that short-pulse light source 14 is projected is closed with the relative position of the peak value of the light pulse projected from long pulse light source 16
System, additionally is able to make two light pulses in time or spatially or in time and with overlapping in space projects.It is above-mentioned same
Step or the control for overlapping are performed via card for laser control unit 42.
In the present embodiment, narrowly set from short relatively than the pulse width of the light pulse from long pulse light source 16
The pulse width of the light pulse of light-pulse generator 14, but for specific pulse width is not particularly limited.However, in order to easy
Understand, here as short-pulse light source 14 applies generation with femtosecond（fs）The femtosecond of the light pulse of the pulse width of level swashs
Light, as long pulse light source 16 nanosecond laser of the light pulse for producing the pulse width with nanosecond is applied, and with the party
Formula is illustrated for illustration.
Therefore, hereinafter, sometimes short-pulse light source 14 is referred to as into femtosecond laser 14, long pulse light source 16 is referred to as to swash nanosecond
Light 16.
In the present embodiment, as an example, will be from the pulse width set of the light pulse of femtosecond laser 14
More than 10fs, below 10ps.In the present embodiment, femtosecond laser 14 is used as the laser of initial irradiation, in processing object
The inside of thing 40, is temporarily forming for the absorptivity of nanosecond laser 16 region higher than non-modification region（Absorptivity increases
Region）.
On the other hand, in the present embodiment, as an example, by from the pulse width of the light pulse of nanosecond laser 16
Degree is set as more than 100ps, below 20ns.Then, nanosecond laser 16 is used as the laser of second irradiation, to using femtosecond
Laser 14 and the absorptivity that is internally formed in workpiece 40 increases region and carries out local heating.Additionally, as second
The laser of secondary irradiation, is to increase the absorbed ripple in region in the absorptivity for being formed as long as nanosecond laser 16 described above is like that
Section laser and be transparent or nearly transparent laser relative to non-modification region, then can also use arbitrary laser.
In the rear trip side of the direct of travel of the laser from femtosecond laser 14（Downstream）1/2 wavelength plate 18 is provided with,
The rear trip side of 1/2 wavelength plate 18 is provided with PBS26.From the just rectilinearly polarized light that femtosecond laser 14 is projected, by 1/2 wavelength
Plate 18 adjusts the direction of plane of polarization, and the P polarization light component of the only rectilinearly polarized light passes through PBS26, and from generating device of laser 12
Project.
Additionally, following by from the rear trip side of the direct of travel of the laser of light source output（That is downstream）Referred to as " swim afterwards
Side ", by the upstream side of the direct of travel of the laser projected from light source " upstream side " is referred to as.
In the rear trip side of nanosecond laser 16, speculum 20, the wavelength plate 24 of delay loop 22 and 1/2 are disposed with, and
Reflected by speculum 20 with the light projected from nanosecond laser 16, via the wavelength plate 24 of delay loop 22 and 1/2 PBS26 is incident to
Mode be positioned.From the just rectilinearly polarized light that nanosecond laser 16 is projected, the side of plane of polarization is adjusted by 1/2 wavelength plate 24
To the S-polarization light component of the only rectilinearly polarized light is reflected by PBS26, and is projected from generating device of laser 12.
Make from femtosecond laser 14 light transmission and export and by reflect from the light of nanosecond laser 16 and export it is above-mentioned
PBS26 also serves as the wave combining unit for carrying out closing ripple from the light of femtosecond laser 14 and from the light of nanosecond laser 16 playing work
With.
Delay loop 22 includes that configuration at a right angle 2 pieces are constituted for 1 group of speculum 22a and 22b, by with incidence
The optical axis optical path length that is moved parallel to the speculum to make nanosecond laser 16 of laser change, adjust from femtosecond laser
14 project light pulses and from nanosecond laser 16 project light pulse between temporal relation.
The adjustment result, as shown in figure 3, be set with time delay tD from femtosecond laser 14 light pulse and from
The light pulse of nanosecond laser 16 is projected as laser from PBS26.
Additionally, timing circuit 22 is not limited to the structure of the above, it is also possible to use Reflex Reflector（retro-
reflector）Deng.
Beam diameter adjuster 28 is configured with the rear trip side of PBS26, it is incident from femtosecond laser 14 and nanosecond laser 16
Light be adjusted to desired beam diameter and swim side injection backward.Can be expanded using light beam as beam diameter adjuster 28
Exhibition device, opening（Hole）Deng.
In the rear trip side of beam diameter adjuster 28, it is disposed with：It is configured to make from femtosecond laser 14 and nanosecond
The light of laser 16 this both sides reflects and makes two tropism filters 30, collector lens 32 and the XYZ coordinate platform of visible light-transmissive
34。
The light from femtosecond laser 14 and nanosecond laser 16 projected from beam diameter adjuster 28 is filtered by two tropisms
Device 30 reflects, and the workpiece 40 being maintained on XYZ coordinate platform 34 is incided via collector lens 32.
Here, with regard to each axle of XYZ coordinate platform 34, if X-axis and Y-axis are in for arranging adding on XYZ coordinate platform 34
In the setting face face of work object 40, Z axis are the normal direction of the setting face（With reference to Fig. 4）.
XYZ coordinate platform 34 is configured to be arranged on setting face with desired distance movement along X-axis, Y-axis and Z axis
On workpiece 40.
It is opposed to be provided with CCD camera 36 with the setting face of XYZ coordinate platform 34.CCD camera 36 possesses towards XYZ coordinate platform
34 setting face irradiates the visible light source of visible ray.Filtered by two tropisms according to the visible ray projected from the visible light source
Device 30 and collector lens 32 are irradiated to the workpiece 40 for being maintained at XYZ coordinate platform 34, anti-in the workpiece 40
The visible ray penetrated is incident to the mode of the imaging apparatus of CCD camera 36 again by two tropism filters 30, to CCD camera 36,
Two tropism filters 30, collector lens 32 and XYZ coordinate platform 34 are positioned.In the present embodiment, by collector lens
The focus of the visible ray of 32 optically focused is consistent with the focus of the femtosecond laser 14 by the optically focused of collector lens 32 and nanosecond laser 16.
XYZ coordinate platform 34 and CCD camera 36 are electrically connected with the control unit 38 of control XYZ coordinate platform 34 and CCD camera 36.
The control unit 38 includes that performing the CPU of the process actions such as various computings, control, differentiation and storage passes through the CPU
Data, input data in the ROM of the various control programs for performing etc., temporarily the process action of storage CPU etc.
Nonvolatile memory such as RAM and flash memory, SRAM etc. and constitute.In addition, control unit 38 with including input regulation refer to
Order either the input operation part (not shown) of the keyboard of data etc. or various switches etc., carry out with the defeated of XYZ coordinate platform 34
Enter the display part (not shown) of the various displays based on setting state, photographed images of CCD camera 36 etc.（For example, display）
Connection.
Next, the rule of the inside to the focus of the light projected from generating device of laser 12 to be set in workpiece 40
One example of the method that positioning is put is illustrated.
Control unit 38 is so that the XYZ coordinate platform 34 for keeping workpiece 40 is moved and using CCD camera 36 in Z-direction
Obtain the mode of camera data, control XYZ coordinate platform 34 and CCD camera 36.Control unit 38 is based on and is obtained using CCD camera 36
The camera data, obtain projecting from above-mentioned visible light source and the focal position of light by the optically focused of collector lens 32 with plus
The position of the XYZ coordinate platform 34 when the surface of work object 40 is consistent, and using the position as reference position.The reference position
Can be stored in advance in based on the storage part for being arranged at the RAM (not shown) of control unit 38 etc..Additionally, the reference position is in optically focused
Lens 32 are arranged in the case of the thickness identical of identical position and workpiece 40 and can divert.
The focus of the femtosecond laser 14 via collector lens 32, nanosecond laser 16 is being set in into workpiece 40
In the case of internal assigned position, the position of the Z-direction that said reference position is adjusted into XYZ coordinate platform 34 as benchmark is come
Set.
For example, wanting to be set in above-mentioned focus in the case of the position on x μm of the surface of workpiece 40, using
Family by above-mentioned input operation part (not shown), x μm of input as with the distance from the surface of workpiece 40 to focus
Related focal length information, and it is input into the refractive index of the material of workpiece 40.
Control unit 38 based on the reference position for being stored in RAM etc. moves XYZ coordinate platform 34, so that workpiece 40
Surface it is consistent with the focus from collector lens 32.Then, control unit 38 be based on by the focal length information of user input with
And x μm of the respective distances that the refractive index of the material of workpiece 40 is come in the refractive index of computing input, and based on the computing
As a result, make XYZ coordinate platform 34 from said reference position downwards（Z-direction, away from the direction of collector lens 32）Mobile regulation
Distance, so that becoming focal position towards internal x μm position from the surface of workpiece 40.
Next, the pulse width of light pulse and the method for adjustment of luminous power to projecting from generating device of laser 12 is carried out
Explanation.
The adjustment of the pulse width of nanosecond laser 16 for example can be carried out in the inside of the nanosecond laser 16 of Fig. 1.As one
Individual example, in the pulse width being adjusted to more than 1ns or so, can in advance nanosecond laser 16 resonator inside light path
Upper setting acousto-optical device（AOM：Acousto-Optic Modulator）, and according to the time span of the switch motion of the AOM come
Adjustment pulse width.Additionally, for example in the pulse width being adjusted to below 1ns or so, can be public using the grade of patent document 1 institute
The fiber stretcher opened.
In addition, fiber stretcher can be with its length adjustment pulse width, such as by by as from femtosecond laser 14
The narrower optical pulse propagation of pulse width as light pulse can expand the pulse width in fiber stretcher.
The adjustment of luminous power can be carried out using 1/2 wavelength plate 18 or 24 of Fig. 1 and PBS26.From femtosecond laser 14 with
And the laser that nanosecond laser 16 is projected is rectilinearly polarized light, by rotating 1/2 wavelength plate 18 or 24 side of plane of polarization is changed
To the amount of P polarization light component and S-polarization light component can be changed.
1/2 wavelength plate 18 is configured to be injected with P polarization light relative to PBS26 from the injection light of femtosecond laser 14.In addition,
1/2 wavelength plate 24 is configured to be injected with S-polarization light relative to PBS26 from the injection light of nanosecond laser 16.
PBS26 is through P polarization light component and reflects S-polarization light component, if so the laser projected from femtosecond laser 14 increases
Plus P polarization light component（Reduce S-polarization light component）, then increase from generating device of laser 12 to the luminous power of the outside light pulse projected
Plus, if reducing P polarization light component on the contrary（Increase S-polarization light component）Then the luminous power of light pulse is reduced.
On the other hand, if the laser projected from nanosecond laser 16 increases S-polarization light component（Reduce P polarization light component）Then from
Generating device of laser 12 to the luminous power of the outside light pulse projected increases, if reducing S-polarization light component on the contrary（Increase P polarization
Light component）Then reduce from generating device of laser 12 to the luminous power of the outside light pulse projected.
Wherein, elliptical polarization is being become for the polarized light state of light projected from femtosecond laser 14 or nanosecond laser 16
Light, circularly polarized light, and in the case of adjusting output as described above, in the light projected from femtosecond laser 14 or nanosecond laser 16
Extinction ratio deteriorate in the case of, can respectively 1/2 wavelength plate 18 or 1/2 wavelength plate 24 upstream side insert polarizer
Improve the extinction ratio.
Next, with reference to Fig. 2, illustrate the step of to making workpiece 40 generate the situation of crackle.Fig. 2 is shown with this
The operation of the crackle generation method involved by embodiment.
First, in operation S100, swashed from femtosecond laser 14 and nanosecond according to the setting of the material of workpiece 40
The parameter of the light pulse of light 16, herein refers to pulse width and luminous power.
It is set with from the parameter of the light pulse of femtosecond laser 14 and is internally formed light suction in workpiece 40
Yield increases the MIN energy required for region.Specifically, luminous power is set to exceed workpiece 40
The intrinsic absorption threshold value of material（The minimum luminous power of Multiphoton Absorbtion is produced in specific material）, pulse width is based on
The luminous power and required energy are setting.
On the other hand, the luminous power from the light pulse of nanosecond laser 16 is set to be less than absorption threshold value, pulse width
It is set in the case where region will be increased from the optical pulse irradiation of the nanosecond laser 16 to above-mentioned absorptivity, with life
Into the energy of microcrack.
Fig. 3 schematically show as more than set from the light pulse of femtosecond laser 14 and from nanosecond laser 16
Light pulse temporal relation.In the figure, the peak value from the light pulse of nanosecond laser 16 is set to than from winged
The peak delay time delay tD of the light pulse of second laser 14, but the setting of time delay tD carries out as needed, is not
It is required.Wherein, with regard to describing after the detailed content of time delay tD.
As an example, the parameter and time delay of the femtosecond laser 14 of the above and the light pulse of nanosecond laser 16
The setting value of tD can also be stored in advance in the storage parts such as the ROM (not shown) that is arranged at control unit 38 according to each material, and
Control unit 38 reads in the time set in advance.
Next, in operation S102, by making to maintain the XYZ coordinate platform 34 of workpiece 40 relative to carrying out self-excitation
The laser L relative movements of light generating apparatus 12, and make the light from femtosecond laser 14 and the light from nanosecond laser 16 exist
On time or overlap in space to workpiece 40 internal irradiation, along preset lines set in advance generate it is fine
Crackle.The irradiation of laser L can be carried out continuously, it is also possible to which interruption is carried out.In addition, along the laser of preset lines set in advance
The irradiation of L can also as needed change the depth inside workpiece 40 and carry out repeatedly（For example, 5 times）.From this
The control of the irradiation of the laser L of generating device of laser 12 controls XYZ coordinate platform 34 and controls card for laser control unit by control unit 38
42 performing.
Fig. 4 schematically shows the relation between above-mentioned laser L and crackle formation zone R.SL described in the figure is represented
Above-mentioned preset lines set in advance.Additionally, preset lines set in advance can be imaginary line, or in processing object
The actual line for drawing in the surface of thing 40.
Record is eliminated in fig. 2, but it is also possible to after the irradiation of above-mentioned laser L, cut along preset lines set in advance
Cut workpiece 40.The cutting can also be using being carried out based on the cut off operation of outside mechanical stress.
Wherein, in the present embodiment, make workpiece 40 relative relative to the laser L from generating device of laser 12
It is mobile, but be not limited thereto, it is also possible to the laser L from generating device of laser 12 is moved relative to workpiece 40 is relative
It is dynamic.
In addition, in the present embodiment, arrange other cut off operation to be cut, but it is also possible to above-mentioned patent text
Offer 1 identical, cut by laser irradiation.
Hereinafter, pair content related to the process chart shown in Fig. 2 is further described in detail.
For the example of the workpiece 40 that object is generated as the crackle involved by present embodiment, GaN is enumerated
（Gallium nitride）、SiC（Carborundum）, sapphire, the material such as glass.However, being not limited to as the material of workpiece 40
These materials, as long as absorptivity can be formed by femtosecond laser 14 and increase region and the absorptivity can be made to increase area
Domain absorbs nanosecond laser 16 and generates the material of microcrack, can apply any materials.
In addition, from generating device of laser 12（Femtosecond laser 14 and nanosecond laser 16）Laser L wavelength select phase
For the wavelength of the material transparent of workpiece 40.In the meaning, workpiece 40 is relative to from generating device of laser
The 12 just transparent transparent materials for projecting.
First, the irradiation to femtosecond laser 14 is illustrated.
In operation S102, in order to the absorptivity that is internally formed in workpiece 40 increases region, irradiate from winged
The light pulse of second laser 14, the light pulse has the sufficient energy for making that solid interior plasma or photoionization phenomenon are produced
Amount.In the present embodiment, the energy density of femtosecond laser 14 not necessarily needs to be set as modifying workpiece
Degree energy density（Form the energy of the degree in modification region）, it is set as causing solid interior plasma or light to send a telegraph
From the energy of the degree of phenomenon.
For the specific setting of femtosecond laser 14, as an example, enumerate using wavelength=1.04 μm, pulse
Width（Become with the luminous power in light pulse the 1/2 of peak value part time width specifying, it is same as below.Hereinafter, sometimes
The time width is referred to as into " half breadth ".）The laser of=500fs, using the optically focused of collector lens 32 of NA=0.65 into about 1.5
μm spot diameter example.In this case required energy（That is, solid interior plasma or photoionization phenomenon are caused
Degree energy）About 0.01 μ J.
If workpiece 40 will be mapped to from the injection illumination of femtosecond laser 14, produce by solid interior plasma
Or the self-absorption that photoionization causes（Snowslide absorbs）, the absorptivity of the irradiation portion of the femtosecond laser 14 in workpiece 40
Temporarily rise.
Fig. 5 is that the time dependent survey of absorptivity in the case of the light of femtosecond laser 14 is irradiated to soda-lime glass
Usual practice, in addition Fig. 6 is the time dependent measure that the absorptivity in the case of the light of femtosecond laser 14 is irradiated to SiC
Example.Measure is carried out by pump and probe method.
I.e., in FIG, using a half-reflecting mirror branch part after the light from femtosecond laser 14 is just projected（Should
The light for branching out is referred to as " detection light ".）And it is passed to delay loop（The delay loop different from delay loop 22）Afterwards, use
PBS（The PBS different from PBS26）Deng with the photosynthetic ripple from femtosecond laser 14 and being back to same paths, and femtosecond is swashed
Light 14 gives time delay（It is denoted as in Fig. 5 and Fig. 6 " elapsed time "）And workpiece 40 is irradiated to, obtain and pass through material
The absorptivity of the detection light of material is simultaneously made the figure of Fig. 5 or Fig. 6.Wherein, in the measure, vibrate nanosecond laser 16.
It can be seen from the measurement result shown in Fig. 5 or Fig. 6, for soda-lime glass, SiC, femtosecond is irradiated just
After laser 14（That is the vicinity in elapsed time 0）, absorptivity all steeply rises, relaxes afterwards.In addition, understanding the change of the absorptivity
Change, soda-lime glass terminates in 0.2ns or so, SiC terminates in 4ns or so.Therefore, it is possible to the absorptivity is changed when
Between regard the duration that the absorptivity caused by solid interior plasma or photoionization rises as.Hereinafter, sometimes will
The duration that the absorptivity rises is referred to as " absorptivity duration ".
Next, to determining to be said from the method for the pulse width of the light pulse of nanosecond laser 16 according to each material
It is bright.
From the pulse width of the light pulse of nanosecond laser 16（Time width）, being preferably set in principle can be efficient
Ground gives heat to the material of workpiece 40, and until the electron excitation → lattice vibration → thermal expansion caused by the light pulse
Continuous light is penetrated till scattered process is in progress.In consideration of it, it may be said that the pulse width of generally preferably nanosecond laser 16 is
More than 100ps.Hereinafter, the pulse width of the actual light pulse from nanosecond laser 16 obtained by experiment is illustrated.
Fig. 7 represents that determine workpiece 40 as SiC has irradiated under certain condition from femtosecond laser 14
Light after irradiated the pulse width of light pulse in the case of the light of nanosecond laser 16, from nanosecond laser 16 and split
Line produces the example of the relation between probability.It can be seen that be that 100ps Crack Nears produce probability saturation in pulse width,
For the pulse width after this, crackle produces probability almost becomes steady state value.
Although not shown, if but further widen pulse width, crackle produces probability and reduces, crackle it is irradiated from
The pulse width of the light pulse of nanosecond laser 16 is produced in the case of certain scope.Also, as shown in the drawing, pulse width is got over
Narrow crackle is finer.
Accordingly, as an example, will can be set to crack from the pulse width of the light pulse of nanosecond laser 16
Pulse width in the range of minimum pulse width.That is, in the case where the material of workpiece 40 is SiC, can by Fig. 7
Know that the pulse width for setting nanosecond laser 16 is about 100ps.
Table 1 is the one of the minimum pulse width for cracking obtained by experiment in the same manner as described above with regard to various materials
Individual example.Probability reduction is produced as the pulse width becomes more short crack, finally becomes not produce（With reference to Fig. 7）.Therefore, exist
The narrow region of the above-mentioned minimum pulse width of pulse width ratio also produces a certain amount of crackle, in this meaning, shown in table 1 most
Small pulse width is the general value with one fixed width estimated.
Table 1
| Material（Workpiece） | The minimum pulse width for cracking |
| Quartz glass | 100fs |
| SiC | 100ps |
| GaN | 100ps |
| Soda-lime glass | 10ns |
Experimental result according to table 1, if changing the pulse width of nanosecond laser 16 to certain material in advance and observing
The crackle produced in workpiece 40, and obtain the minimum pulse width for cracking, then carrying out and its material of the same race
When the crackle of material is generated, it is also possible to which the pulse width is set to into the pulse width of nanosecond laser 16.
In addition, as shown in figure 8, for multiple material, the thermal coefficient of expansion of material with can generate microcrack most
There is correlation between small pulse width, so can also be according to the thermal expansion system of the material of the workpiece 40 for being cut
Count to determine the pulse width of nanosecond laser 16.That is, it is also possible to predicted according to the physical characteristic of the material and determined
The pulse width.
For example, according to Fig. 8, as an example, it is also possible to be in 3 × 10-6～7 × 10-6 for thermal coefficient of expansion（1/
k）In the range of material, by the pulse width set of nanosecond laser 16 be more than 10ps below 1ns, be for thermal coefficient of expansion
7×10-6（1/k）Material above, is more than 1ns below 20ns by the pulse width set of nanosecond laser 16.
Wherein, experimental result, in addition to the thermal coefficient of expansion of the material of workpiece, workpiece
It has also been found that presence is related between the pyroconductivity or Young's modulus of material and the minimum pulse width that microcrack can be generated
Property.
Can also make as described above according to every kind of material set nanosecond laser 16 pulse width and luminous power it is pre-
It is first stored in being arranged in ROM (not shown) of control unit 38 etc..
Next, illustrating to operation S102 of Fig. 2.In operation S102, to by the light from femtosecond laser 14
Irradiation and the absorptivity that is formed locally in workpiece 40 increases region, increase the light in region in the absorptivity
Before absorptivity is restored, that is, within the absorptivity duration, the light from nanosecond laser 16 is irradiated.Nanosecond now swashs
The pulse width and luminous power of light 16 is the pulse width and luminous power set in operation S100.
It is preferred that making the light pulse projected from nanosecond laser 16 and the light pulse projected from femtosecond laser 14 in time or empty
Between it is upper or overlap in time and spatially（Overlap）.
Fig. 3 is shown with make the light pulse from femtosecond laser 14 overlapping in time with the light pulse from nanosecond laser 16
In the case of example.In figure 3, by from the peak value of the light pulse of nanosecond laser 16 relative to the light arteries and veins from femtosecond laser 14
The delay-time difference of the peak value of punching is defined as time delay tD.
In the example shown in Fig. 3, relative to the peak value of the light pulse from femtosecond laser 14, from nanosecond laser 16
The peak delay of light pulse time delay tD, but be first incident upon workpiece 40 is light arteries and veins from nanosecond laser 16
Punching.Therefore, it is overlapping in generation time in the light pulse from femtosecond laser 14 and between the light pulse of nanosecond laser 16.
Also it is shown with absorption threshold value in the lump in figure 3.As described above, in the present embodiment, by from femtosecond laser 14
The peak-settings of the luminous power of light pulse are more than the value for absorbing threshold value.In addition, by from the light of the light pulse of nanosecond laser 16
The peak-settings of power are less than absorption threshold value.
Soda-lime glass is shown in Fig. 9 and Figure 10 and changes absorptivity in the case of above-mentioned time delay tD
Change.Fig. 9 illustrates the change of the absorptivity in the case of tD=0.25ns, and Figure 10 illustrates that the light in the case of tD=0.05ns is inhaled
The change of yield.In Fig. 9 and Figure 10, in addition to femtosecond laser 14, go back irradiation energy and be about 1.2 μ J, pulse width about
For the nanosecond laser 16 of 0.1ns.In addition, the measure of this absorptivity is carried out using above-mentioned pump and probe method.
By clearly visible with the comparison of Fig. 5, in Fig. 10, absorptivity is raised, in addition the absorptivity duration
Significantly expand, on the other hand in fig .9, without obvious difference in the contrast with Fig. 5.Therefore, it can be said that Figure 10 is illustrated：
The absorptivity duration of the 0.2ns produced by the optical pulse irradiation from femtosecond laser 14 or so（With reference to Fig. 5）Interior photograph
A part for the energy of the light pulse from nanosecond laser 16 penetrated is processed object 40 and absorbs, by absorbing the energy by solid
The self-absorption that body internal plasma or photoionization cause further continues.
In addition it is shown that：Even from the longer situation of the pulse width of the light pulse of nanosecond laser 16（For example, as
One example, is the pulse width of 10ns or so）If an initial part for the light pulse is absorbed, light followed by
The remainder of pulse is also absorbed, and in other words, can absorb light pulse in the whole time of the pulse width universe of light pulse.
In the present embodiment, above-mentioned time delay will be obtained according to experiment etc. according to every kind of material of processing object 40
Based on tD.
However, the fact that according to the result from Fig. 5 and Figure 10, i.e. workpiece 40 irradiated from just
Start from after the light pulse of femtosecond laser 14 produce absorptivity increase, and if from nanosecond laser 16 light pulse most
A first part is processed object 40 and absorbs, then the remainder of the light pulse from nanosecond laser 16 followed by also by
The fact is absorbed, time delay tD independently can also for example be set as the light pulse from nanosecond laser 16 with material
Pulse width（Half breadth）About 1/2.If carrying out the setting of time delay tD like this, can save in advance according to every
Plant the time that material searches the absorptivity duration irradiated after femtosecond laser 14.
In addition, assuming to have irradiated workpiece 40 with time delay tD=0s the light pulse from femtosecond laser 14
In the case of the light pulse from nanosecond laser 16, it is impossible to enough first halfs for absorbing the light pulse from nanosecond laser 16,
So as to waste energy, but will not also produce such problem.Additionally, the 1/2 of so-called pulse width is the general value estimated, i.e.,
Somewhat expansion time delay tD is set also to absorb can light pulse, it is also possible to change into other fixations as needed
Value.
As previously discussed, by irradiating workpiece 40 from nanosecond laser（It is relative to workpiece 40
Bright laser）16 light pulse, the energy of the light pulse increases region in absorptivity（The region being excited）Absorbed, energy
The enough inside to workpiece 40 carries out local heating.As a result, in the present embodiment, fine splitting can be generated
Line.
In the present embodiment, do as described above, and along preset lines set in advance carry out femtosecond laser 14 and
The irradiation of nanosecond laser 16, can continuously or discontinuously form the crackle formation zone for including microcrack.After this,
Can also as needed, by being cut along the crackle formation zone based on the cut off operation of outside mechanical stress.
[second embodiment]
Present embodiment is the side in the generation direction that crackle can be further controlled on the basis of first embodiment
Formula.
It is usually, each in the thermal stress of light collecting part if irradiation positive round light beam in the case where crackle is formed using laser
Extend to the same sex, so crackle is produced in any direction.Semiconductor material is for example selected accordingly, with respect to as workpiece 40
Material, and carry out cutting such situation after the direction of regulation forms the connecting line of crackle, exist and produce not preferable shape
The possibility of crackle.Therefore, the necessity in the generation direction of control crackle is produced.
As the method in the generation direction of control crackle, it is known to which the light concentrating shape for making light beam has directionality（For example, will
The light concentrating shape of light beam is set to ellipse etc.）, or 2 focal beam spots are set and the method such as them is close to be irradiated
（For example, Japanese Unexamined Patent Publication 2011-056544 publications）.
However, ultra-short pulse laser is used in the above-mentioned methods, so can not be answered come additional sufficiently heat according to material
Power, therefore, it is merely able to using certain specific material.Further, since need to form oval or multiple focal beam spots, so laser
It is required can quantitative change it is big.If also, using with the sufficient pulse width for extra heat stress from nanosecond laser
Light pulse making generation Multiphoton Absorbtion, then the energy mutually greater than necessary with pulse, so crackle can become too much.
Even if in addition, in the case of the mixed pulses of the pulse using femtosecond laser and the pulse of nanosecond laser, when right
For Femtosecond Optical Pulses and nanosecond light pulse this both sides, when being set to ellipse or being set to multiple focal beam spots, Femtosecond Optical Pulses
Light energy more than one times is needed compared with the situation of single-spot, so not preferred for cheap and high speed processing.
Present embodiment is characterised by that being directed to the absorptivity produced by Femtosecond Optical Pulses increases the scope change in region
Must be more wider than the scope of the focal beam spot of the Femtosecond Optical Pulses（For by rule of thumb, it is femtosecond that absorptivity increases the area in region
More than 4 times of the area of the focal beam spot of light pulse）, and be irradiated with single-spot using Femtosecond Optical Pulses come needed for reducing
Energy, and only control nanosecond light pulse light concentrating shape, thus come carry out crackle generation direction control.
Hereinafter, present embodiment is further described in detail, first, with reference to Figure 11 and Figure 12, to swashing from nanosecond
Relation between the long axis direction and direction of check of the ellipse light spot that light 16 is projected is illustrated, and Figure 11 and Figure 12 is in Fig. 1
In from the surface relative to workpiece 40 it is vertical direction observation workpiece 40 inside obtained by figure.
Such as Figure 11（a）It is shown, if in the light that projects from femtosecond laser 14 of inside optically focused of workpiece 40, in the light
After processed object 40 absorbs, solid interior plasma is produced around the light collecting part and its.If making the solid interior
The light pulse that plasma absorption is projected from nanosecond laser 16, then the solid interior plasma with project from the nanosecond laser 16
Ellipse light spot overlap region be heated, anisotropically spread in the region thermal stress, in the major axis side of the ellipse light spot
To cracking.Therefore, such as Figure 11（b）It is shown, if irradiation for example has the oval from nanosecond laser of major axis in X-direction
16 light pulse, then crackle is in X-direction generation.
Therefore, if using with Figure 11（b）The nanosecond laser 16 of shown hot spot, and such as Figure 12（a）As shown in, one
The light pulse from femtosecond laser 14 and the edge X-direction scanning machining object of the light pulse from nanosecond laser 16 one are irradiated in side
Thing 40, then can with want cut line abreast crack, it is possible to obtain as present embodiment it is purpose,
Preferred state in the generation of microcrack corresponding with the material of workpiece 40.On the other hand, such as Figure 12（b）It is shown,
If carrying out along X-direction towards in the state of Y direction in the major axis for projecting the ellipse light spot in light from nanosecond laser 16
Scanning, then vertically crack, so not preferred with the line for wanting to cut.
As previously discussed, in the present embodiment, by the length of the light pulse from nanosecond laser 16 with ellipse light spot
Direction of principal axis is set as parallel with cutting preset lines.By such structure, can be according to the material of workpiece in preferred side
To generation microcrack, and can be cut in high-precision.
In addition, such as Figure 13（a）Or Figure 13（b）It is shown, it is also possible to set the cut surface of workpiece 40（Produced by cutting
Raw face, XZ faces）With the longer axis parallel of the light pulse from nanosecond laser 16 with ellipse light spot（Direction of check and cut surface
It is parallel）.Crackle also can be made towards in preferred direction at the aspect of cutting processing object 40 according to the structure.
Also, in addition to it will be set to the method for ellipse from the hot spot of the injection light of nanosecond laser 16, as shown in figure 14,
The hot spot of the injection light from nanosecond laser 16 can also be set to substantially positive round, and irradiate multiple（It is in fig. 14 2）Should
Hot spot.In this case direction of check has linked penetrating from nanosecond laser 16 as being indicated by arrows in Fig., become
Go out the direction of the straight line at the center of the hot spot of light.
As previously discussed, in the present embodiment, by the length of the light pulse from nanosecond laser 16 with ellipse light spot
Direction of principal axis is set as parallel with cut surface.Or, the light from nanosecond laser with multiple substantially circular hot spots will be linked
The direction setting of the line at the center of the hot spot of pulse is parallel with cutting preset lines.According to such structure, being capable of basis
The material of workpiece generates microcrack in preferred orientations, and can carry out the cutting of fine.
Claims (10)
1. a kind of crackle generation method, it is characterised in that
The first light pulse is irradiated to workpiece from first laser light source, so as in the inside of the workpiece along pre-
The preset lines for first setting form the first area that absorptivity is temporarily uprised, and first light pulse has the first arteries and veins set in advance
Rush width and make the luminous intensity of the material generation Multiphoton Absorbtion of the workpiece,
And before the absorptivity of the first area that absorptivity has temporarily been uprised restores, from second laser light source pair
At least a portion of the first area is irradiated the second light pulse and makes at least a portion absorb the second light pulse, along institute
State preset lines set in advance and generate crackle in the workpiece, second light pulse has for the workpiece
Material and the material for not making the workpiece set in advance produces the luminous intensity of Multiphoton Absorbtion and than described the
The second wide pulse width of one pulse width.
2. crackle generation method according to claim 1, it is characterised in that
It is to instigate second light pulse with first light pulse to irradiate second light pulse from the second laser light source
Overlap to irradiate second light pulse at least one party in time and spatially.
3. the crackle generation method according to claim 1 or claim 2, it is characterised in that
Second pulse width is set to and second laser light when can generate crackle in the workpiece
The corresponding value of minimum pulse width in the pulse width in source.
4. the crackle generation method according to claim 1 or claim 2, it is characterised in that
The peak delay time set in advance of the first light pulse described in the peakedness ratio of second light pulse.
5. the crackle generation method according to claim 1 or claim 2, it is characterised in that
Set based at least one of the thermal coefficient of expansion of the material of the workpiece, pyroconductivity and Young's modulus
Fixed second pulse width.
6. the crackle generation method according to claim 1 or claim 2, it is characterised in that
It is entering in the way of the first light pulse described in the inside optically focused in the workpiece to irradiate first light pulse
Row irradiation,
It is entering in the way of the second light pulse described in the inside optically focused in the workpiece to irradiate second light pulse
Row irradiation,
According to generate crackle direction come control the optically focused part of first light pulse and second light pulse size,
At least one in shape and number.
7. crackle generation method according to claim 6, it is characterised in that
The shape of the optically focused part of second light pulse is elliptical shape, and the oval major axis is set in advance with described
Preset lines are parallel.
8. crackle generation method according to claim 6, it is characterised in that
The number of the optically focused part of second light pulse is multiple, links straight line and the institute at the center of each optically focused part
State preset lines set in advance parallel.
9. a kind of cutting method of utilization laser, it is characterised in that
Usage right requires the crackle generation method in 1 to claim 8 described in any one,
And carry out the cutting of the workpiece along the preset lines set in advance.
10. a kind of crackle generating means, it is characterised in that include：
First laser light source, projects the light of pulse type；
Second laser light source, projects the light of pulse type；
Irradiation control unit, according to make from the first laser light source to workpiece irradiate the first light pulse mode control
The first laser light source, so that in the first area that absorptivity is temporarily uprised that is internally formed of the workpiece,
First light pulse has the first pulse width set in advance and makes the material of workpiece produce Multiphoton Absorbtion
Luminous intensity, also,
Before absorptivity according to the first area temporarily uprised in absorptivity restores, make from second laser light source
The second laser light source is controlled to the mode of at least a portion second light pulse of irradiation of the first area, so as to described
Processing object generates crackle, second light pulse there is the material for the workpiece and it is set in advance do not make it is described
The material of workpiece produces the luminous intensity and second pulse width wider than the first pulse width of Multiphoton Absorbtion；And
Mobile unit, makes at least in the workpiece and the first laser light source and the second laser light source
Fang Yidong so that along preset lines set in advance irradiate from the first laser light source first light pulse and
From second light pulse of the second laser light source.
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| JP2013090762A JP5836998B2 (en) | 2013-04-23 | 2013-04-23 | Crack generation method, laser cutting method and crack generation apparatus |
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| CN104117775B true CN104117775B (en) | 2017-04-12 |
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| JP6395613B2 (en) * | 2015-01-06 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
| WO2016193786A1 (en) * | 2015-06-01 | 2016-12-08 | Evana Technologies, Uab | Method of laser scribing of semiconductor workpiece using divided laser beams |
| EP3718148B1 (en) * | 2017-11-29 | 2022-11-16 | Nichia Corporation | Method for producing semiconductor light emitting element |
| US11482826B2 (en) * | 2018-01-12 | 2022-10-25 | Ricoh Company, Ltd. | Optical processing apparatus, optical processing method, and optically-processed product production method |
| CN107953027B (en) * | 2018-01-15 | 2019-09-20 | 哈尔滨工业大学 | A kind of femtosecond of pulse combined-nanosecond laser system of processing and processing method |
| JP7188886B2 (en) * | 2018-01-29 | 2022-12-13 | 浜松ホトニクス株式会社 | processing equipment |
| JP7123652B2 (en) * | 2018-06-20 | 2022-08-23 | 株式会社ディスコ | Laser processing equipment |
| JP2020112626A (en) * | 2019-01-09 | 2020-07-27 | 住友電気工業株式会社 | Wavelength conversion optical device and method of manufacturing the same |
| DE102019125103A1 (en) * | 2019-09-18 | 2021-03-18 | Bystronic Laser Ag | Processing device for laser processing of a workpiece, method for laser processing of a workpiece |
| CN113601027A (en) * | 2021-08-04 | 2021-11-05 | 广东工业大学 | Double-laser composite invisible cutting method and processing system |
| CN114101942A (en) * | 2021-11-29 | 2022-03-01 | 武汉锐科光纤激光技术股份有限公司 | Method, device and apparatus for controlling cutting of material, storage medium and electronic apparatus |
| CN114453770A (en) * | 2022-03-10 | 2022-05-10 | 浙江大学杭州国际科创中心 | Method for double-pulse femtosecond laser slicing of SiC substrate |
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| JP2003088975A (en) * | 2001-09-12 | 2003-03-25 | Hamamatsu Photonics Kk | Laser beam machining method |
| JP4209615B2 (en) * | 2001-12-28 | 2009-01-14 | 株式会社ニデック | Laser processing equipment |
| JP2005109323A (en) * | 2003-10-01 | 2005-04-21 | Tokyo Seimitsu Co Ltd | Laser beam dicing device |
| JP2006035710A (en) * | 2004-07-28 | 2006-02-09 | Cyber Laser Kk | Glass processing method using laser and device |
| JP4736633B2 (en) * | 2005-08-31 | 2011-07-27 | セイコーエプソン株式会社 | Laser irradiation device |
| TW200722218A (en) * | 2005-12-05 | 2007-06-16 | Foxsemicon Integrated Tech Inc | Laser cutting apparatus |
| WO2008127807A1 (en) * | 2007-03-09 | 2008-10-23 | University Of Virginia Patent Foundation | Systems and methods of laser texturing of material surfaces and their applications |
| JP5232375B2 (en) * | 2006-10-13 | 2013-07-10 | アイシン精機株式会社 | Method for separating semiconductor light emitting device |
| US9254536B2 (en) * | 2009-05-15 | 2016-02-09 | Paul Hoff | Method and apparatus for controlled laser ablation of material |
| JP5862088B2 (en) * | 2011-07-22 | 2016-02-16 | アイシン精機株式会社 | Laser cleaving method and laser cleaving apparatus |
| JP5967405B2 (en) * | 2012-01-17 | 2016-08-10 | アイシン精機株式会社 | Laser cleaving method and laser cleaving apparatus |
| JP5727433B2 (en) * | 2012-09-04 | 2015-06-03 | イムラ アメリカ インコーポレイテッド | Transparent material processing with ultrashort pulse laser |
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