CN114453770A - Method for double-pulse femtosecond laser slicing of SiC substrate - Google Patents
Method for double-pulse femtosecond laser slicing of SiC substrate Download PDFInfo
- Publication number
- CN114453770A CN114453770A CN202210238596.3A CN202210238596A CN114453770A CN 114453770 A CN114453770 A CN 114453770A CN 202210238596 A CN202210238596 A CN 202210238596A CN 114453770 A CN114453770 A CN 114453770A
- Authority
- CN
- China
- Prior art keywords
- pulse
- double
- femtosecond laser
- silicon carbide
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 64
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 64
- 230000003287 optical effect Effects 0.000 claims description 25
- 230000010287 polarization Effects 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 12
- 238000003698 laser cutting Methods 0.000 abstract description 7
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000035882 stress Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- -1 damage occurs Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Abstract
The invention discloses a method for stripping a double-pulse femtosecond laser slice of a SiC substrate, which adopts a rapid heating and cooling-stripping method to generate enough internal stress after low-energy femtosecond laser double-pulse cutting, further destroys an amorphous structure after laser cutting and reduces the required mechanical stress of external stripping. According to the invention, by means of double-pulse laser slicing, the thickness of a damage layer caused in the laser slicing process is greatly reduced, and a great deal of waste of materials is avoided; meanwhile, the 'fast heating and cooling' means is utilized, so that the external tension required by stripping after slicing is greatly reduced, and the slice can be stripped easily; the method has the advantages of low material loss, short processing time, low cost and little environmental pollution.
Description
Technical Field
The invention belongs to the technical field of semiconductors, relates to cutting of silicon carbide, and particularly relates to a method for double-pulse femtosecond laser slicing of a SiC substrate.
Background
With the development of science and technology, people have higher and higher requirements on electronic devices, and high temperature, high frequency, radiation resistance and high power are the most basic requirements. The third generation semiconductor material has the characteristics of wider forbidden band width, higher thermal conductivity, higher radiation resistance, higher electron saturation drift rate and the like, and has important application value in the fields of photoelectrons and microelectronics. While SiC is a typical representative of third generation semiconductors, it is very hard, second only to diamond (grade 10), on the 9.5 mohs scale, and not easily cut. The existing SiC cutting processing methods mainly comprise free mortar cutting, diamond wire saw cutting and femtosecond laser cutting.
The main defects of the traditional free mortar cutting and diamond wire saw cutting methods are large material loss and long processing time. Due to the limitation of the size of the wire saw, the method can only cut out wafers with larger thickness. In addition, the wafer surface roughness and warpage after dicing are large, and the thickness of the damaged layer exceeds 100 μm with a large amount of surface and sub-surface damage (brittle peeling, cracking, amorphization, phase transformation, dislocation propagation, etc.). To remove these damages, thinning, rough grinding, finish grinding, CMP and other processes are introduced subsequently, which increase the cost and pollute the environment, and the material loss exceeds 50% of the original value.
Patent document CN110549016A discloses a method for cutting silicon carbide by a single-pulse femtosecond laser, which breaks the SiC crystal structure at the laser focal plane by the multiphoton excitation principle of the femtosecond laser, thereby realizing precise cutting of the SiC crystal with a mohs hardness of 9.5. The method has the advantages of accurate cutting, material saving, simple process, no pollution, good repeatability and the like. However, the diced SiC wafers cannot be easily peeled off and still require a large external mechanical stress to be detached. Furthermore, the thickness of the laser-cut damage layer after cutting is close to 100 μm, and is still large. In addition, the laser single pulse energy required by the method is higher, and the cost pressure is higher.
Disclosure of Invention
The invention aims to solve the problems of large material loss, long processing time, high cost, serious environmental pollution and the like existing in the traditional slicing mode; and the defects of overlarge wafer stripping tension, overhigh required single pulse energy, overlarge slice damage thickness and the like in common femtosecond laser cutting, the SiC substrate double-pulse femtosecond laser slice stripping method combining the heating-cooling process is provided, and after low-energy femtosecond laser double-pulse cutting, a fast-heating cold-stripping method is adopted to generate enough internal stress, further destroy an amorphous structure after laser cutting, and reduce the size of the required mechanical stress of external stripping.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for double-pulse femtosecond laser slicing of a SiC substrate comprises the following steps:
1) cleaning the silicon carbide wafer, and fixing the silicon carbide wafer on processing equipment;
2) setting parameters of a femtosecond laser;
3) setting the light path of the double-pulse laser, firstly manufacturing the light path with optical path difference, then converging the light path to manufacture the double-pulse light path, and focusing the light path in the silicon carbide wafer;
4) moving the processing equipment, and accurately cutting the silicon carbide wafer by using double-pulse femtosecond laser;
5) and 4) heating the cut silicon carbide wafer in a protective atmosphere, taking out the silicon carbide wafer, quickly cooling the silicon carbide wafer, and dissociating the silicon carbide wafer by using a pulling device.
In the invention, a femtosecond laser with specific energy is utilized, a beam splitter and a reflector are combined, two optical paths with certain optical path difference are firstly manufactured, then the two optical paths with the optical path difference of picosecond level are converged together to manufacture a double-pulse optical path, and finally the double-pulse optical path is focused in a silicon carbide wafer to carry out single scanning. The thickness of the damaged layer after double-pulse laser cutting is much smaller than that of the single-pulse laser cutting because the "blackened" structure caused by the first pulse absorbs the energy of the second pulse. After the double-pulse laser cutting process is completed, the silicon carbide wafer is subjected to high-temperature treatment in an argon-filled environment, and is taken out and then is rapidly placed into water for cooling, so that sufficient internal stress is generated in the rapid temperature rise and fall process, the structure of a damaged layer is further damaged, and the size of external stress required by final peeling is reduced.
When the femtosecond laser interacts with a substance, valence electrons absorb the energy of multiphoton and are in an excited state to generate high-density plasma, and when the concentration of the plasma reaches 'critical density', a large amount of energy of the laser is absorbed by a crystal material, damage occurs, and chemical bonds of SiC are broken. The femtosecond laser has the advantages that: the time for which the electron-absorbed photon is excited is in the femtosecond range (during the pulse action) while the time for the electro-phonon coupling is in the picosecond range, so that the laser energy absorbed by the electron is not transferred to the ion, and the laser action time is over. The temperature of the electrons is high, but the temperature of the ions is very low throughout the process, which can be considered a non-thermal process, and thermal diffusion, thermal melting and ablation do not occur.
For a double-pulse femtosecond laser, the first pulse generates multiphoton excitation process, and the photon of the second pulse takes the electron excited by the first pulse as a free electron to generate avalanche ionization, so that the free electron is generated more effectively. Therefore, the double-pulse cutting efficiency is much higher than that of a single pulse, and as the energy of the photon of the second pulse is absorbed by the free electrons caused by the first pulse, the cut damaged blackened structure cannot extend excessively along the laser propagation direction, so that the thickness of a damaged layer is limited.
And the laser slicing process is finished only when the blackening damage area is distributed on the whole silicon carbide plane by matching with the movement of the processing table on the horizontal plane. After the working procedure is finished, the cut SiC wafer is subjected to rapid high-temperature heating treatment in an argon environment, then is rapidly taken out and put into water for quenching, and in the process of thermal expansion and cold contraction, the SiC wafer generates internal stress and further destroys the blackened amorphous structure. Finally, the wafer can be dissociated by a small force by using a tension device.
In a preferable scheme of the invention, in the step 1), the silicon carbide wafer is cleaned by carrying out ultrasonic cleaning on the silicon carbide wafer in alcohol.
As a preferred embodiment of the present invention, in step 2), the parameters of the femtosecond laser are: the wavelength is 780nm, the pulse width is 125-135fs, the pulse energy is 25-35 muJ, and the repetition frequency is 9.5-10.5 kHz.
As a preferred embodiment of the present invention, the parameters of the femtosecond laser are: wavelength of 750-800nm, pulse width of 130fs, pulse energy of 30 muJ, and repetition frequency of 10 kHz.
As a preferable aspect of the present invention, in step 3), the optical path is: converting the linear polarization laser pulse into s-polarized pulse and p-polarized pulse with the same energy by using a half-wave plate and a polarization beam splitter; introducing s and p polarization pulse optical paths into different routes, and forming an optical path difference of 1-10ps by controlling the distance traveled by the two optical paths; and finally, converging the laser beams by using a half-wave plate and a polarization beam splitter to finally form a single-strand double-pulse laser beam, and focusing the single-strand double-pulse laser beam on the SiC wafer on the processing table to the depth required by the slicing of the SiC wafer through a convex lens.
In a preferred embodiment of the present invention, the optical path difference is 5 ps.
As a preferable mode of the present invention, in the step 4), the moving speed of the processing device is 1.5 to 2.5 mm/s.
In a preferred embodiment of the present invention, in step 4), the moving speed of the processing device is 2 mm/s.
As a preferable mode of the present invention, in the step 5), the heat treatment is: preserving the heat for 4-6h at 480-550 ℃; taking out and then cooling by water.
In a preferred embodiment of the present invention, in step 5), the protective atmosphere is an argon atmosphere.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, by means of double-pulse laser slicing, the thickness of a damaged layer caused in the laser slicing process is greatly reduced, and a large amount of waste of materials is avoided; meanwhile, the external tension required by stripping after slicing is greatly reduced by means of 'quick heating and cooling', so that the slices can be stripped easily; the method has the advantages of low material loss, short processing time, low cost and little pollution to the environment.
Drawings
FIG. 1 shows SiC wafer fragments obtained by the method of the present invention.
FIG. 2 is an enlarged view of a SiC wafer lift-off cross-section according to the method of the present invention.
Fig. 3 is a raman spectrum of the SiC wafer before and after the double pulse femtosecond laser dicing.
Fig. 4 is a schematic diagram of the optical path of the double-pulse laser of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 4, the double-pulse laser optical path device adopted in the present invention is that a pulse emitted by a laser transmitter enters a half-wave plate and is converted into s-polarized pulse and p-polarized pulse with the same energy through a polarization beam splitter, wherein the s-polarized pulse is reflected by 2 mirrors and then vertically enters the half-wave plate (i.e. λ/2 plate in fig. 4) and another polarization beam splitter; the p-polarized pulse is reflected by the other 2 reflectors and then enters a half-wave plate, and is converged with the s-polarized pulse in the polarization beam splitter to form a single-strand double-pulse laser beam.
Examples
The embodiment provides a method for double-pulse femtosecond laser slicing of a SiC substrate, which comprises the following steps:
1) putting the SiC wafer in alcohol for ultrasonic cleaning, taking out surface stains, drying, and finally fixing on a laser processing table;
2) adjusting parameters of a femtosecond laser, wherein the parameters are adjusted to have the wavelength of 780nm, the pulse width of 130fs, the pulse energy of 30 muJ, the repetition frequency of 10kHz, and the moving speed of a laser processing platform of 2 mm/s;
3) a double-pulse laser is manufactured by using a double-pulse laser optical path device; firstly, converting linear polarization laser pulses into s-polarization pulses and p-polarization pulses with the same energy by using a half-wave plate and a polarization beam splitter; introducing two pulse optical paths into different routes, precisely controlling the distance traveled by the two optical paths to form an optical path difference of 5ps, finally converging the optical path difference by using a half-wave plate and a polarization beam splitter to finally form a single-stranded double-pulse laser beam, and focusing the single-stranded double-pulse laser beam on the depth required by the slicing of the SiC wafer on a processing table through a convex lens;
4) by moving the processing table, the nonlinear absorption of laser enables the silicon carbide to be converted into amorphous silicon and graphite, the damage of a crystal structure is realized, the whole plane of the SiC wafer at the depth is covered with a blackened damage area after cutting, and accurate cutting is realized;
5) and 4) after the step 4) is finished, placing the SiC wafer in a muffle furnace filled with argon, quickly heating to 500 ℃, preserving heat for 5 hours, taking out, and quickly putting into water for cooling. Finally, the wafer can be peeled off with a small force by means of the pulling device.
The SiC wafer fragment obtained after cutting by the method of the present invention is shown in FIG. 1, and the enlarged view of the peeling section of the SiC wafer is shown in FIG. 2.
Fig. 3 is a raman spectrum of a SiC wafer before and after double pulse femtosecond laser dicing, the wafer before dicing having a very sharp SiC raman peak, the SiC peak after dicing substantially disappeared, and instead, broadband raman signals of Si and C.
Therefore, the method greatly reduces the thickness of the damaged layer caused in the laser slicing process by a double-pulse laser slicing means, and avoids a great deal of waste of materials; meanwhile, the external tension required by stripping after slicing is greatly reduced by means of 'quick heating and cooling', so that the slices can be stripped easily; the method has the advantages of low material loss, short processing time, low cost and little pollution to the environment.
While the invention has been described with respect to a preferred embodiment, it will be understood by those skilled in the art that the foregoing and other changes, omissions and deviations in the form and detail thereof may be made without departing from the scope of this invention. Those skilled in the art can make various changes, modifications and equivalent arrangements, which are equivalent to the embodiments of the present invention, without departing from the spirit and scope of the present invention, and which may be made by utilizing the techniques disclosed above; meanwhile, any changes, modifications and variations of the above-described embodiments, which are equivalent to those of the technical spirit of the present invention, are within the scope of the technical solution of the present invention.
Claims (10)
1. A method for slicing a SiC substrate by using a double-pulse femtosecond laser is characterized by comprising the following steps of:
1) cleaning the silicon carbide wafer, and fixing the silicon carbide wafer on processing equipment;
2) setting parameters of a femtosecond laser;
3) setting the light path of the double-pulse laser, firstly manufacturing the light path with optical path difference, then converging the light path to manufacture the double-pulse light path, and focusing the light path in the silicon carbide wafer;
4) moving the processing equipment, and accurately cutting the silicon carbide wafer by using double-pulse femtosecond laser;
5) and 4) heating the cut silicon carbide wafer in a protective atmosphere, taking out the silicon carbide wafer, quickly cooling the silicon carbide wafer, and dissociating the silicon carbide wafer by using a pulling device.
2. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 1, wherein in the step 1), the silicon carbide wafer is cleaned by ultrasonic cleaning of the silicon carbide wafer in alcohol.
3. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 1, wherein in the step 2), the parameters of the femtosecond laser are as follows: the wavelength is 780nm, the pulse width is 125-135fs, the pulse energy is 25-35 muJ, and the repetition frequency is 9.5-10.5 kHz.
4. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 3, wherein the parameters of the femtosecond laser are as follows: wavelength of 750-800nm, pulse width of 130fs, pulse energy of 30 muJ, and repetition frequency of 10 kHz.
5. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 1, wherein in the step 3), the optical path is as follows: converting the linear polarization laser pulse into s-polarized pulse and p-polarized pulse with the same energy by using a half-wave plate and a polarization beam splitter; introducing s and p polarization pulse optical paths into different routes, and forming an optical path difference of 1-10ps by controlling the distance traveled by the two optical paths; and finally, converging the laser beams by using a half-wave plate and a polarization beam splitter to finally form a single-strand double-pulse laser beam, and focusing the single-strand double-pulse laser beam on the SiC wafer on the processing table to the depth required by the slicing of the SiC wafer through a convex lens.
6. The method of claim 5, wherein the optical path difference is 5 ps.
7. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 1, wherein in the step 4), the moving speed of the processing equipment is 1.5-2.5 mm/s.
8. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 7, wherein in the step 4), the moving speed of the processing equipment is 2 mm/s.
9. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 1, wherein in the step 5), the heating treatment is as follows: preserving the heat for 4-6h at 480-550 ℃; taking out and then cooling by water.
10. The method for double-pulse femtosecond laser dicing of the SiC substrate according to claim 1, wherein in the step 5), the protective atmosphere is an argon atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210238596.3A CN114453770A (en) | 2022-03-10 | 2022-03-10 | Method for double-pulse femtosecond laser slicing of SiC substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210238596.3A CN114453770A (en) | 2022-03-10 | 2022-03-10 | Method for double-pulse femtosecond laser slicing of SiC substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114453770A true CN114453770A (en) | 2022-05-10 |
Family
ID=81416908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210238596.3A Pending CN114453770A (en) | 2022-03-10 | 2022-03-10 | Method for double-pulse femtosecond laser slicing of SiC substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114453770A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114851352A (en) * | 2022-05-23 | 2022-08-05 | 松山湖材料实验室 | Resistance heating element and method of manufacturing the same |
| CN116435175A (en) * | 2023-05-19 | 2023-07-14 | 河北同光半导体股份有限公司 | Processing method applied to silicon carbide single crystal substrate |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1362728A (en) * | 2000-12-26 | 2002-08-07 | 株式会社半导体能源研究所 | Semiconductor device manufacture method |
| CN102133690A (en) * | 2010-01-21 | 2011-07-27 | 东芝机械株式会社 | Laser dicing device |
| JP2013171906A (en) * | 2012-02-20 | 2013-09-02 | Laser System:Kk | Laser dicing method and laser processing device |
| CN103878496A (en) * | 2014-04-15 | 2014-06-25 | 北京理工大学 | Method for efficiently processing high-quality micro hole with large ratio of pit-depth to pit-diameter through femtosecond laser |
| CN104117775A (en) * | 2013-04-23 | 2014-10-29 | 爱信精机株式会社 | Crack generation method, cutting method using laser and crack generation device |
| JP2017056469A (en) * | 2015-09-15 | 2017-03-23 | 浜松ホトニクス株式会社 | Laser processing method and laser processing device |
| CN108637489A (en) * | 2018-05-11 | 2018-10-12 | 北京卫星制造厂有限公司 | A method of carrying out milling microflute processing using ultrafast laser |
| CN109848547A (en) * | 2019-04-08 | 2019-06-07 | 北京理工大学 | The modified transparent material of femtosecond laser efficient stable is uniformly at silk method |
| CN110549016A (en) * | 2019-09-23 | 2019-12-10 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
| CN111069793A (en) * | 2019-12-31 | 2020-04-28 | 武汉大学 | Double-pulse laser invisible cutting method |
-
2022
- 2022-03-10 CN CN202210238596.3A patent/CN114453770A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1362728A (en) * | 2000-12-26 | 2002-08-07 | 株式会社半导体能源研究所 | Semiconductor device manufacture method |
| CN102133690A (en) * | 2010-01-21 | 2011-07-27 | 东芝机械株式会社 | Laser dicing device |
| JP2013171906A (en) * | 2012-02-20 | 2013-09-02 | Laser System:Kk | Laser dicing method and laser processing device |
| CN104117775A (en) * | 2013-04-23 | 2014-10-29 | 爱信精机株式会社 | Crack generation method, cutting method using laser and crack generation device |
| CN103878496A (en) * | 2014-04-15 | 2014-06-25 | 北京理工大学 | Method for efficiently processing high-quality micro hole with large ratio of pit-depth to pit-diameter through femtosecond laser |
| JP2017056469A (en) * | 2015-09-15 | 2017-03-23 | 浜松ホトニクス株式会社 | Laser processing method and laser processing device |
| CN108637489A (en) * | 2018-05-11 | 2018-10-12 | 北京卫星制造厂有限公司 | A method of carrying out milling microflute processing using ultrafast laser |
| CN109848547A (en) * | 2019-04-08 | 2019-06-07 | 北京理工大学 | The modified transparent material of femtosecond laser efficient stable is uniformly at silk method |
| CN110549016A (en) * | 2019-09-23 | 2019-12-10 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
| CN111069793A (en) * | 2019-12-31 | 2020-04-28 | 武汉大学 | Double-pulse laser invisible cutting method |
Non-Patent Citations (1)
| Title |
|---|
| EUNHO KIM, YASUHIKO SHIMOTSUMA, MASAAKI SAKAKURA, AND KIYOTAKA MIURA: "4H-SiC wafer slicing by using femtosecond laser double pulses", OPTICAL MATERIALS EXPRESS, vol. 7, no. 7, 1 July 2017 (2017-07-01), pages 2450 - 2460 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114851352A (en) * | 2022-05-23 | 2022-08-05 | 松山湖材料实验室 | Resistance heating element and method of manufacturing the same |
| CN114851352B (en) * | 2022-05-23 | 2023-11-28 | 松山湖材料实验室 | Resistance heating element and method for manufacturing same |
| CN116435175A (en) * | 2023-05-19 | 2023-07-14 | 河北同光半导体股份有限公司 | Processing method applied to silicon carbide single crystal substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI637433B (en) | Combined wafer production method with laser treatment and temperature-induced stresses | |
| JP4838531B2 (en) | Plate cutting method and laser processing apparatus | |
| US10304739B2 (en) | Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate | |
| CN114453770A (en) | Method for double-pulse femtosecond laser slicing of SiC substrate | |
| US7169687B2 (en) | Laser micromachining method | |
| US9040389B2 (en) | Singulation processes | |
| KR101552607B1 (en) | Wafer dicing using hybrid split-beam laser scribing process with plasma etch | |
| JP2001284292A (en) | Chip division method for semiconductor wafer | |
| US8748294B2 (en) | SOS substrate with reduced stress | |
| US20110227068A1 (en) | Method for manufacturing composite substrate comprising wide bandgap semiconductor layer | |
| US10916461B2 (en) | Method of laser scribing of semiconductor workpiece using divided laser beams | |
| KR20200085947A (en) | Uniform masking for wafer dicing using laser and plasma etch | |
| JP2006035710A (en) | Glass processing method using laser and device | |
| TW201523696A (en) | The generation of a crack initiation point or a crack guide for improved separation of a solid layer from a solid body | |
| KR101181719B1 (en) | Substrate Dicing Method by Nano Void Array Formation using Femtosecond Pulse Lasers | |
| JP2003046177A (en) | Method of manufacturing semiconductor laser | |
| KR101222489B1 (en) | Method for Wafer Dicing and Drilling through Anisotropic Etching after Local Amorphization using Laser Beam | |
| JP2012038932A (en) | Semiconductor wafer thinning method and bonded wafer manufacturing method | |
| US20060124617A1 (en) | High-power solid-state laser dicing apparatus for a gallium nitride wafer and dicing method thereof | |
| JP2020021968A (en) | Method of scribing semiconductor workpiece | |
| Qiao | Laser annealing on wafer | |
| JPS5844726A (en) | Gettering method | |
| Ohmura et al. | Modified-layer formation mechanism into silicon with permeable nanosecond laser | |
| Mayerhofer et al. | Laser micro-processing in solar cell production | |
| JP2012069748A (en) | Laser annealing method and laser annealing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |