CN104117775A - Crack generation method, cutting method using laser and crack generation device - Google Patents
Crack generation method, cutting method using laser and crack generation device Download PDFInfo
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- CN104117775A CN104117775A CN201410160380.5A CN201410160380A CN104117775A CN 104117775 A CN104117775 A CN 104117775A CN 201410160380 A CN201410160380 A CN 201410160380A CN 104117775 A CN104117775 A CN 104117775A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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Abstract
The invention provides a crack generation method for generating microcracks according to a material of a to-be-processed object, a cutting method using a laser and a crack generation device. A first light pulse is radiated from a first laser source to the to-be-processed object, so that a first area in which the temporarily-increased light absorption rate is formed along a preset line preset in advance inside the to-be-processed object. The first light pulse has a preset first pulse width and light intensity which enables the material of the to-be-processed object to generate multiphoton absorption. Before the temporarily-increased light absorption rate of the first area is recovered, a second light pulse is radiated onto at least one part of the first area from a second laser source and is absorbed. Thus, cracks are formed in the to-be-processed object along the preset line preset in advance. The second light pulse has light intensity which prevents the material of the to-be-processed object from generation multiphoton absorption with respect to the material of the to-be-processed object and has a second pulse width larger than the first pulse width.
Description
Technical field
The present invention relates to crackle generation method, utilize cutting method and the crackle generating apparatus of laser, relate in particular to and can generate the crackle generation method of microcrack, the cutting method of utilizing laser and crackle generating apparatus according to the material of workpiece.
Background technology
Known have a following technology: if in the inside of transparent material, optically focused from the such as pulse width of short-pulse light source of pulse width relative narrower be femtosecond (fs) level femtosecond laser light pulse or be that nanosecond (ns) light pulse etc. of nanosecond laser of level forms focal point from the relatively wide such as pulse width of long pulse light source of pulse width, and near the electric-field intensity this focal point is made as to high condition, can produce Multiphoton Absorbtion, can inject to transparent material the energy of this light pulse.And, utilize the energy of this injection can in material, form upgrading region, thus form continuously or discontinuously in the inside of semiconductor material substrate, piezoelectric substrate or glass substrate etc. such upgrading region and for cutting.
In patent documentation 1, disclose and used cutting technique above-mentioned technology, that used laser.The invention of patent documentation 1 is configured to: utilize the initial femtosecond laser irradiating to form upgrading region in the inside of workpiece, utilize the femtosecond laser next irradiating temporarily to form the region that absorptivity is higher, further, by the higher area illumination nanosecond laser of this absorptivity and make it absorb to heat, utilize the thermal expansion generating by this heating to cut off taking above-mentioned upgrading region as starting point.
Patent documentation 1: TOHKEMY 2013-022627 communique
Upgrading region refers to the region of the variations in refractive index of following material, but in order to carry out the cutting of fine, preferably in this upgrading region, comprises fine crackle.About this point, in the disclosed cutting technique that uses laser of patent documentation 1, do not have intention to be configured to the upgrading region producing utilizing the initial femtosecond laser irradiating and generate crackle.In addition, according to the material of workpiece, the light output of nanosecond laser is not set as to the idea of suitable value, so workpiece does not become suitable heated condition, therefore, the invention of patent documentation 1 does not become the invention that generates microcrack and carry out cutting.
If do not generate crackle, exist after thermal expansion time can not as cutting starting point play a role fully, and according to material be difficult to cutting situation.In addition, though hypotheses creation crackle, but also because can not form and generate the condition of microcrack, so cut surface is coarse.Therefore, in the cutting this point of carrying out fine for various materials, there is room for improvement.
On the other hand, in the situation that generating microcrack, different and different according to material for the condition of the laser irradiating, for example utilize femtosecond laser to make soda-lime glass generate microcrack very difficult.This be because the duration of the Temperature Distribution after the generation of microcrack and the interior absorbing laser of material, temperature or the thermal expansion that caused by these (, the thermal characteristics of material) relevant, the light pulse of penetrating from femtosecond laser be the extremely short time by relatively little energy injection to the light pulse in material, in the condition this point that gives material heat, exist according to material difference and inappropriate situation.Should illustrate, above-mentioned microcrack also comprises the crack that does not become small empty degree.
In addition, there is larger energy from the light pulse of nanosecond laser compared with light pulse from femtosecond laser, if with femtosecond laser optically focused and electric-field intensity is made as to high condition in the same manner, also can produce Multiphoton Absorbtion, but need to use the device of the high price that Laser output is larger for this reason.In addition, even use such device in hypothesis, also exist energy because of pulse excessive produces exceed that large crackle, the cut surface of needs is coarse, the problem such as the yield rate reduction of fragment generation, chip.
Summary of the invention
The present invention completes in order to solve above-mentioned problem, and object is to provide a kind of can generate the crackle generation method of microcrack, the cutting method of utilizing laser and crackle generating apparatus according to the material of workpiece.
To achieve these goals, the crackle generation method that technical scheme 1 is recorded is following method: from the first LASER Light Source, workpiece is irradiated to the first light pulse, thereby the inside at above-mentioned workpiece forms along predefined preset lines the first area that absorptivity temporarily uprises, this first light pulse has predefined the first pulse width and makes the luminous intensity of the material production Multiphoton Absorbtion of above-mentioned workpiece, and before the absorptivity of the above-mentioned first area temporarily having uprised at absorptivity restores, from the second LASER Light Source, at least a portion of above-mentioned first area is irradiated the second light pulse and made it absorb the second light pulse, come to generate crackle along above-mentioned predefined preset lines at above-mentioned workpiece, this second light pulse has for the material of above-mentioned workpiece and the luminous intensity of the predefined material production Multiphoton Absorbtion that does not make above-mentioned workpiece and second pulse width wider than above-mentioned the first pulse width.
In addition, the invention that technical scheme 2 is recorded is following invention: in the invention of recording in technical scheme 1, irradiating above-mentioned the second light pulse from above-mentioned the second LASER Light Source is to instigate above-mentioned the second light pulse and upper overlapping above-mentioned the second light pulse of irradiating of at least one party of above-mentioned the first light pulse in time and space.
In addition, the invention that technical scheme 3 is recorded is following invention: in the invention that technical scheme 1 or technical scheme 2 are recorded, above-mentioned the second pulse width is set to the corresponding value of minimum pulse width in the pulse width of above-mentioned the second LASER Light Source with can generate crackle in above-mentioned workpiece time.
In addition, the invention that technical scheme 4 is recorded is following invention: in the invention of recording in technical scheme 1 to any one in technical scheme 3, and the predefined time of peak delay of above-mentioned first light pulse of peakedness ratio of above-mentioned the second light pulse.
In addition, the invention that technical scheme 5 is recorded is following invention: in the invention of recording in technical scheme 1 to any one in technical scheme 4, at least one in thermal coefficient of expansion, pyroconductivity and the Young's modulus of the material based on above-mentioned workpiece set above-mentioned the second pulse width.
In addition, the invention that technical scheme 6 is recorded is following invention: in the invention of recording in technical scheme 1 to any one in technical scheme 5, irradiating above-mentioned the first light pulse is to irradiate in the mode of above-mentioned the first light pulse of inside optically focused at above-mentioned workpiece, irradiating above-mentioned the second light pulse is to irradiate in the mode of above-mentioned the second light pulse of inside optically focused at above-mentioned workpiece, control the size of the optically focused part of above-mentioned the first light pulse and above-mentioned the second light pulse according to the direction that generates crackle, at least one item in shape and number.
In addition, the invention that technical scheme 7 is recorded is following invention: in the invention of recording in technical scheme 6, the shape of the above-mentioned optically focused part of above-mentioned the second light pulse is elliptical shape, and this oval major axis is parallel with above-mentioned predefined preset lines.
In addition, the invention that technical scheme 8 is recorded is following invention: in the invention of recording in technical scheme 6, the number of the above-mentioned optically focused part of above-mentioned the second light pulse is multiple, and the straight line at center that links each optically focused part is parallel with above-mentioned predefined preset lines.
On the other hand, to achieve these goals, what technical scheme 9 was recorded utilizes the cutting method of laser is following method: the crackle generation method that operation technique scheme 1 is recorded to any one in technical scheme 8, and carry out the cutting of above-mentioned workpiece along above-mentioned predefined preset lines.
And to achieve these goals, the crackle generating apparatus that technical scheme 10 is recorded comprises: the first LASER Light Source, the light of ejaculation pulse type, the second LASER Light Source, the light of ejaculation pulse type, irradiate control module, according to above-mentioned the first LASER Light Source of mode control that makes from above-mentioned the first LASER Light Source, workpiece to be irradiated the first light pulse, to make forming in the inside of above-mentioned workpiece the first area that absorptivity temporarily uprises, this first light pulse has predefined the first pulse width and makes the luminous intensity of the material production Multiphoton Absorbtion of workpiece, and, before restoring according to the absorptivity of the above-mentioned first area temporarily having uprised at absorptivity, make from the second LASER Light Source, at least a portion of above-mentioned first area to be irradiated above-mentioned second LASER Light Source of mode control of the second light pulse, thereby generate crackle at above-mentioned workpiece, this second light pulse has for the material of above-mentioned workpiece and the luminous intensity of the predefined material production Multiphoton Absorbtion that does not make above-mentioned workpiece and wide the second pulse width than the first pulse width, and mobile unit, at least one party in above-mentioned workpiece and above-mentioned the first LASER Light Source and above-mentioned the second LASER Light Source is moved, irradiate from above-mentioned first light pulse of above-mentioned the first LASER Light Source and from above-mentioned second light pulse of above-mentioned the second LASER Light Source along predefined preset lines making.
According to the present invention, play the effect that can generate according to the material of workpiece the crackle generation method of microcrack, the cutting method of utilizing laser and crackle generating apparatus can be provided.Brief description of the drawings
Fig. 1 is the block diagram that represents an example of the structure of the related crackle generating apparatus of embodiment.
Fig. 2 is the process chart that represents the step of the related crackle generation method of the first embodiment.
Fig. 3 be represent the first embodiment related from the light pulse of femtosecond laser with from the schematic diagram of the time relationship of the light pulse of nanosecond laser.
Fig. 4 represents that the related crackle of the first embodiment generates the mould diagram of state.
Fig. 5 represents to be mapped to the figure of variation of the absorptivity in the situation of soda-lime glass from the illumination of femtosecond laser.
Fig. 6 represents to be mapped to the figure of variation of the absorptivity in the situation of SiC from the illumination of femtosecond laser.
Fig. 7 is the figure that is illustrated in the pulse width of the light pulse from nanosecond laser in the situation that workpiece is SiC and crackle and produces the relation between probability.
Fig. 8 represents thermal coefficient of expansion and the figure from the relation between the minimum pulse width cracking of the light pulse of nanosecond laser.
Fig. 9 represents to be made as 0.25ns the time delay of the light pulse from nanosecond laser of the light pulse with respect to from femtosecond laser and will to be mapped to the figure of variation of the absorptivity in the situation of soda-lime glass from the illumination of generating device of laser.
Figure 10 represents to be made as 0.05ns the time delay of the light pulse from nanosecond laser of the light pulse with respect to from femtosecond laser and will to be mapped to the figure of variation of the absorptivity in the situation of soda-lime glass from the illumination of generating device of laser.
Figure 11 is the schematic diagram of the relation between focal beam spot and the direction of check of focal beam spot for femtosecond laser is described and nanosecond laser.
Figure 12 is the schematic diagram of the relation between focal beam spot and the direction of check of focal beam spot for femtosecond laser is described and nanosecond laser.
Figure 13 is the schematic diagram of the relation between focal beam spot and the direction of check of focal beam spot for femtosecond laser is described and nanosecond laser.
Figure 14 is the schematic diagram of the relation between focal beam spot and the direction of check of focal beam spot for femtosecond laser is described and nanosecond laser.
Description of reference numerals: 10 ... crackle generating apparatus; 12 ... generating device of laser; 14 ... short-pulse light source (femtosecond laser); 16 ... long pulse light source (nanosecond laser); 18,24 ... 1/2 wavelength plate; 20 ... speculum; 22 ... delay loop; 22a, 22b ... speculum; 26 ... PBS; 28 ... beam diameter adjuster; 30 ... two tropism's filters; 32 ... collector lens; 34 ... XYZ coordinate platform; 36 ... CCD camera; 38 ... control part; 40 ... workpiece; 42 ... card for laser control unit; L ... laser; SL ... predefined preset lines;
Detailed description of the invention
Below, with reference to accompanying drawing, embodiments of the present invention are elaborated, before this basic idea of present embodiment are described.
As mentioned above, in order to carry out the cutting of fine, preferably make to comprise in upgrading region fine crackle.But, having used in the cutting of laser, even if use individually respectively short-pulse laser or Long Pulse LASER to be also difficult to generate fine crackle.
Therefore, in the present embodiment, by short-pulse laser and Long Pulse LASER are irradiated with overlapping in space in time or, absorb the light of the Long Pulse LASER of the low optical power that can not be absorbed separately.
That is to say, in the present embodiment, adopt and utilize in advance the light of the short-pulse laser relatively little from energy temporarily to improve the absorptivity of material, make this region that absorptivity has uprised absorb the method from the light of Long Pulse LASER.Therefore, even if being the low optical power that can not be absorbed separately, Long Pulse LASER also can be absorbed.
Thus, can freely select according to material luminous power and the pulse width of the Long Pulse LASER absorbing, can be in order to generate microcrack and the luminous power of Long Pulse LASER and pulse width to be set as to suitable condition according to material.That is to say, can be using short-pulse laser as " opportunity " for absorbing Long Pulse LASER, afterwards by utilizing the suitable heating state of Long Pulse LASER adjustment, thermal expansion situation to generate microcrack.Now, thinner from the narrower crackle of pulse width of the light pulse of Long Pulse LASER, so the pulse width of light pulse that also can be using the minimum pulse width cracking as Long Pulse LASER is set.
[the first embodiment]
With reference to Fig. 1, the structure of the related crackle generating apparatus 10 of present embodiment is described.
Crackle generating apparatus 10 comprises generating device of laser 12, beam diameter adjuster 28, two tropism's filters 30, collector lens 32, XYZ coordinate platform 34, CCD camera 36 and control part 38 and forms.
The laser L penetrating from generating device of laser 12, by beam diameter adjuster 28, two tropism's filters 30 and collector lens 32, is irradiated to the workpiece 40 being maintained on XYZ coordinate platform 34.
Generating device of laser 12 comprises as short-pulse light source 14,1/2 wavelength plate 18 of the first LASER Light Source, the long pulse light source 16 as the second LASER Light Source, speculum 20, delay loop 22,1/2 wavelength plate 24, PBS(polarization beam splitter: polarization beam apparatus) 26 and card for laser control unit 42 and forming.
Generating device of laser 12 is configured to and can makes the vibration individually respectively of short-pulse light source 14 and long pulse light source 16, also can make short-pulse light source 14 and long pulse light source 16 synchronously vibrate.In addition, generating device of laser 12 can regulate the relative position relation of the peak value of the light pulse of penetrating from short-pulse light source 14 and the peak value of the light pulse penetrated from long pulse light source 16, can make in addition two light pulses in time or on space or in time and overlap in space and penetrate.Above-mentioned synchronous or overlapping control is carried out via card for laser control unit 42.
In the present embodiment, recently from the pulse width of the light pulse of long pulse light source 16 relatively narrow set the pulse width from the light pulse of short-pulse light source 14, but be not particularly limited for concrete pulse width.But, for easy understanding, here applied the femtosecond laser of the light pulse that produces the pulse width with femtosecond (fs) level as short-pulse light source 14, apply the nanosecond laser that produces the light pulse of the pulse width with nanosecond as long pulse light source 16, and described as illustrating taking which.
Therefore, below, sometimes short-pulse light source 14 is called to femtosecond laser 14, long pulse light source 16 is called to nanosecond laser 16.
In the present embodiment, as an example, more than the pulse width of the light pulse from femtosecond laser 14 is set as to 10fs, below 10ps.In the present embodiment, use femtosecond laser 14 as the laser of initial irradiation, in the inside of workpiece 40, temporarily form for the absorptivity of nanosecond laser 16 region higher than non-upgrading region (absorptivity increase region).
On the other hand, in the present embodiment, as an example, more than the pulse width of the light pulse from nanosecond laser 16 is set as to 100ps, below 20ns.Then, use nanosecond laser 16 as the laser irradiating for the second time, the absorptivity forming in the inside of workpiece 40 using femtosecond laser 14 increases region and carries out local heat.In addition, as the laser irradiating for the second time, as long as nanosecond laser 16 described above is such, be to increase the laser of the absorbed wave band in region and be transparent or transparent laser almost with respect to non-upgrading region at the absorptivity forming, also can use laser arbitrarily.
Rear trip side (downstream) at the direct of travel of the laser from femtosecond laser 14 is provided with 1/2 wavelength plate 18, is provided with PBS26 in the rear trip side of this 1/2 wavelength plate 18.The only rectilinearly polarized light penetrating from femtosecond laser 14, adjusts the direction of plane of polarization by 1/2 wavelength plate 18, only the P polarized light component of this rectilinearly polarized light sees through PBS26, and penetrates from generating device of laser 12.
In addition, below by trip side (being downstream) from the direct of travel of the laser of light source output referred to as " swimming afterwards side ", by the upstream side of the direct of travel of the laser penetrating from light source referred to as " upstream side ".
In the rear trip side of nanosecond laser 16, be disposed with speculum 20, delay loop 22 and 1/2 wavelength plate 24, and be reflected mirror 20 with the light penetrating from nanosecond laser 16 and reflect, the mode that is incident to PBS26 via delay loop 22 and 1/2 wavelength plate 24 is positioned.The only rectilinearly polarized light penetrating from nanosecond laser 16, adjusts the direction of plane of polarization by 1/2 wavelength plate 24, only the S polarized light component of this rectilinearly polarized light is reflected by PBS26, and penetrates from generating device of laser 12.
Make from the light transmission of femtosecond laser 14 output and using the above-mentioned PBS26 reflecting from the light of nanosecond laser 16 and export also as playing a role by the light from femtosecond laser 14 with from the ripple unit that closes that the light of nanosecond laser 16 closes ripple.
Delay loop 22 comprises that rectangular 2 pieces of configuration is that speculum 22a and the 22b of 1 group forms, by with the optical axis of the laser of incident abreast mobile this speculum the optical path length of nanosecond laser 16 is changed, adjust the temporal relation between the light pulse of penetrating from femtosecond laser 14 and the light pulse of penetrating from nanosecond laser 16.
This adjustment result, as shown in Figure 3, is set with being penetrated from PBS26 as laser from the light pulse of femtosecond laser 14 and from the light pulse of nanosecond laser 16 of tD time delay.
In addition, timing circuit 22 is not limited to above structure, also can use Reflex Reflector (retro-reflector) etc.
Rear trip side at PBS26 disposes beam diameter adjuster 28, is adjusted to desirable beam diameter and swims backward side and penetrate from the light of femtosecond laser 14 and nanosecond laser 16 incidents.Can use optical beam expander, opening (hole) etc. as beam diameter adjuster 28.
In the rear trip side of beam diameter adjuster 28, be disposed with: be configured to and make from femtosecond laser 14 and nanosecond laser 16 these both sides' light reflection and two tropism's filters 30, collector lens 32 and the XYZ coordinate platform 34 that visible ray is seen through.
The light from femtosecond laser 14 and nanosecond laser 16 penetrating from beam diameter adjuster 28 is reflected by two tropism's filters 30, incides the workpiece 40 being maintained on XYZ coordinate platform 34 via collector lens 32.
Here about each axle of XYZ coordinate platform 34, establish X-axis and Y-axis in the installation surface face for the workpiece 40 on XYZ coordinate platform 34 is set, the normal direction (with reference to Fig. 4) that Z axis is this installation surface.
XYZ coordinate platform 34 is configured to and can be arranged on the workpiece 40 in installation surface with desirable distance moving along X-axis, Y-axis and Z axis.
Be provided with opposed to each other CCD camera 36 with the installation surface of XYZ coordinate platform 34.CCD camera 36 possesses the visible light source that irradiates visible ray towards the installation surface of XYZ coordinate platform 34.Be irradiated to by two tropism's filters 30 and collector lens 32 workpiece 40 that is maintained at XYZ coordinate platform 34 according to the visible ray penetrating from this visible light source, the visible ray reflecting at this workpiece 40 is incident to the mode of the imaging apparatus of CCD camera 36 again by two tropism's filters 30, CCD camera 36, two tropism's filters 30, collector lens 32 and XYZ coordinate platform 34 are positioned.In the present embodiment, the focus of the visible ray by collector lens 32 optically focused is with consistent by the femtosecond laser 14 of collector lens 32 optically focused and the focus of nanosecond laser 16.
XYZ coordinate platform 34 and CCD camera 36 are electrically connected with the control part 38 of controlling XYZ coordinate platform 34 and CCD camera 36.
This control part 38 comprise the CPU of the action such as processings of carrying out various computings, control, differentiation and store the ROM of the various control programs carried out by this CPU etc., temporarily store data in the processing action of CPU, input the RAM of data etc. and flash memory, the nonvolatile memory such as SRAM etc. forms.In addition, control part 38 with comprise input regulation instruction or data etc. keyboard or various switches etc. not shown input operation part, carry out for example, connecting taking input set condition, the photographed images of CCD camera 36 etc. of XYZ coordinate platform 34 as the not shown display part (, display) of main various demonstrations.
Next, to the focusing of the light penetrating from generating device of laser 12 is described at an example of the method for the assigned position of the inside of workpiece 40.
Control part 38, so that the XYZ coordinate platform 34 of maintenance workpiece 40 moves and utilizes CCD camera 36 to obtain the mode of camera data in Z-direction, is controlled XYZ coordinate platform 34 and CCD camera 36.Control part 38 this camera data based on utilizing CCD camera 36 to obtain, obtain penetrate from above-mentioned visible light source and by collector lens 32 optically focused the position of the focal position of light and the surface of the workpiece 40 XYZ coordinate platform 34 when consistent, and using this position as reference position.This reference position also can be pre-stored at the storage part based on being arranged at not shown RAM of control part 38 etc.In addition, this reference position is arranged on the thickness of identical position and workpiece 40 at collector lens 32 and can diverts identical.
In the case of by via collector lens 32 the focusing of femtosecond laser 14, nanosecond laser 16 in the assigned position of the inside of workpiece 40, adjust the position of the Z-direction of XYZ coordinate platform 34 using said reference position as benchmark and set.
For example, wanting above-mentioned focusing in the case of the position of the surperficial x μ m apart from workpiece 40, user is by above-mentioned not shown input operation part, input x μ m as with surface from the workpiece 40 focal length information to the Range-based of focus, and the refractive index of the material of input workpiece 40.
The reference position of control part 38 based on being stored in RAM etc. moved XYZ coordinate platform 34, so that the surface of workpiece 40 is with consistent from the focus of collector lens 32.Then, the refractive index of the material of the focal length information of control part 38 based on being inputted by user and workpiece 40 is carried out the respective distances of the x μ m in the refractive index of computing input, and based on this operation result, make XYZ coordinate platform 34 from said reference position (Z-direction downwards, away from the direction of collector lens 32) mobile predetermined distance, to make becoming focal position on the surface from workpiece 40 towards the position of inner x μ m.
Next, the method for adjustment of the pulse width to the light pulse of penetrating from generating device of laser 12 and luminous power describes.
The adjustment of the pulse width of nanosecond laser 16 for example can be carried out in the inside of the nanosecond laser of Fig. 1 16.As an example, when pulse width more than being adjusted into about 1ns, can be in advance in the light path of the resonator inside of nanosecond laser 16, acousto-optical device (AOM:Acousto-Optic Modulator) be set, and adjusts pulse width according to the time span of the switch motion of this AOM.In addition, for example when the pulse width below being adjusted into about 1ns, can use the disclosed fiber stretchers such as patent documentation 1.
In addition, fiber stretcher can be with its length adjustment pulse width, for example, pass through the optical pulse propagation narrower pulse width as the light pulse from femtosecond laser 14, in fiber stretcher, can expand this pulse width.
The adjustment of luminous power can with 1/2 wavelength plate 18 of Fig. 1 or 24 and PBS26 carry out.The laser penetrating from femtosecond laser 14 and nanosecond laser 16 is rectilinearly polarized light, by making 1/2 wavelength plate 18 or 24 rotations change the direction of plane of polarization, can change the amount of P polarized light component and S polarized light component.
1/2 wavelength plate 18 is configured to from the ejaculation light of femtosecond laser 14 and injects with P polarised light with respect to PBS26.In addition, 1/2 wavelength plate 24 is configured to from the ejaculation light of nanosecond laser 16 and injects with S polarised light with respect to PBS26.
PBS26 sees through P polarized light component and reflection S polarized light component, if so the laser penetrating from femtosecond laser 14 increases P polarized light component (reducing S polarized light component), the luminous power of the light pulse of penetrating from generating device of laser 12 to outside increases, if the luminous power of light pulse of the contrary P of minimizing polarized light component (increasing S polarized light component) reduces.
On the other hand, if the laser penetrating from nanosecond laser 16 increases S polarized light component (reducing P polarized light component), from generating device of laser 12 to outside, the luminous power of the light pulse of ejaculation increases, if reduce on the contrary S polarized light component (increasing P polarized light component), from generating device of laser 12 to outside, the luminous power of the light pulse of ejaculation reduces.
Wherein, becoming elliptically polarized light, circularly polarized light for the polarisation of light light state penetrating from femtosecond laser 14 or nanosecond laser 16, and adjust as described above in the situation of output, in the case of the extinction ratio of the light that penetrates from femtosecond laser 14 or nanosecond laser 16 worsens, can insert polarizer at the upstream side of 1/2 wavelength plate 18 or 1/2 wavelength plate 24 respectively and improve this extinction ratio.
Next,, with reference to Fig. 2, the step that makes workpiece 40 generate the situation of crackle is described.Fig. 2 is shown with the operation of the related crackle generation method of present embodiment.
First, in operation S100, set the parameter from the light pulse of femtosecond laser 14 and nanosecond laser 16 according to the material of workpiece 40, refer to pulse width and luminous power here.
Be set to have from the parameter of the light pulse of femtosecond laser 14 and form absorptivity in the inside of workpiece 40 and increase the needed MIN energy in region.Particularly, luminous power is set to the intrinsic absorption threshold value (producing the minimum luminous power of Multiphoton Absorbtion in specific material) of material that exceedes workpiece 40, and pulse width is set based on this luminous power and needed energy.
On the other hand, luminous power from the light pulse of nanosecond laser 16 is set to be less than absorption threshold value, pulse width is set in the case of the optical pulse irradiation from this nanosecond laser 16 is increased region to above-mentioned absorptivity, has the energy that generates microcrack.
Fig. 3 schematically show as above, set from the light pulse of femtosecond laser 14 with from the temporal relation of the light pulse of nanosecond laser 16.In the figure, be set to recently peak delay tD time delay from the light pulse of femtosecond laser 14 from the peak value of the light pulse of nanosecond laser 16, but time delay tD setting as required, optional.Wherein, about narration after the detailed content of tD time delay.
As an example, the parameter of above femtosecond laser 14 and the light pulse of nanosecond laser 16 and time delay tD setting value also can be arranged at the storage parts such as the not shown ROM of control part 38 according to each material is pre-stored, and control part 38 read in the predefined time.
Next, in operation S102, by the XYZ coordinate platform 34 that maintains workpiece 40 is relatively moved with respect to the laser L from generating device of laser 12, and make from the light of femtosecond laser 14 and from the light of nanosecond laser 16 in time or overlap in space to the internal irradiation of workpiece 40, come to generate microcrack along predefined preset lines.The irradiation of this laser L can be carried out continuously, also can be interrupted and carry out.In addition, also can change as required in the degree of depth of workpiece 40 inside and carry out repeatedly (for example, 5 times) along the irradiation of the laser L of predefined preset lines.Control from the irradiation of the laser L of this generating device of laser 12 is controlled XYZ coordinate platform 34 by control part 38 and controls card for laser control unit 42 and carry out.
Fig. 4 schematically shows the relation between above-mentioned laser L and crackle formation zone R.The SL that this figure records represents above-mentioned predefined preset lines.In addition, predefined preset lines can be imaginary line, can be also at the actual line drawing in the surface of workpiece 40.
In Fig. 2, omit record, but also can be after the irradiation of above-mentioned laser L, along predefined preset lines cutting processing object 40.This cutting also can be undertaken by the cut-out operation based on exterior mechanical stress.
Wherein, in the present embodiment, workpiece 40 is relatively moved with respect to the laser L from generating device of laser 12, but be not limited to this, also can make to relatively move with respect to workpiece 40 from the laser L of generating device of laser 12.
In addition, in the present embodiment, other cut-out operation is set and cuts, but also can be identical with above-mentioned patent documentation 1, cut by Ear Mucosa Treated by He Ne Laser Irradiation.
Below, the content relevant to the process chart shown in Fig. 2 is further elaborated.
For the example of the workpiece 40 as the related crackle formation object thing of present embodiment, enumerate GaN(gallium nitride), SiC(carborundum), the material such as sapphire, glass.But, be not limited to these materials as the material of workpiece 40, increase region and can make this absorptivity increase region absorption nanosecond laser 16 as long as forming absorptivity by femtosecond laser 14 material that generates microcrack, can apply any materials.
In addition, from generating device of laser 12(femtosecond laser 14 and nanosecond laser 16) the wavelength of laser L select the wavelength transparent with respect to the material of workpiece 40.In this meaning, workpiece 40 is with respect to the only transparent transparent material penetrating from generating device of laser 12.
First, the irradiation of femtosecond laser 14 is described.
In operation S102, for forming absorptivity, the inside at workpiece 40 increases region, irradiate the light pulse from femtosecond laser 14, this light pulse has the sufficient energy that solid interior plasma or photoionization phenomenon are produced.In the present embodiment, the energy density of femtosecond laser 14 not necessarily need to be set as workpiece to carry out the energy density (forming the energy of the degree in upgrading region) of the degree of upgrading, is set as the energy of the degree that causes solid interior plasma or photoionization phenomenon.
For the concrete setting of femtosecond laser 14, as an example, enumerate use wavelength=1.04 μ m, pulse width (time width that becomes 1/2 part of peak value with luminous power in light pulse specifies, below identical.Below, sometimes this time width is called to " half breadth ".The laser of)=500fs, utilizes collector lens 32 optically focused of NA=0.65 to become the example of the spot diameter of about 1.5 μ m.Needed energy in this situation (, causing the energy of the degree of solid interior plasma or photoionization phenomenon) is approximately 0.01 μ J.
If the ejaculation illumination from femtosecond laser 14 is mapped to workpiece 40, produce the self-absorption (snowslide absorption) being caused by solid interior plasma or photoionization, the absorptivity of the irradiation portion of the femtosecond laser 14 in workpiece 40 temporarily rises.
Fig. 5 is routine from the time dependent mensuration of the absorptivity in the situation of the light of femtosecond laser 14 to soda-lime glass irradiation, and Fig. 6 is the time dependent mensuration example from the absorptivity in the situation of the light of femtosecond laser 14 to SiC irradiation in addition.Measure and undertaken by pump probe method.
,, in Fig. 1, after just penetrating, the light from femtosecond laser 14 use a half-reflecting mirror branch part (this light branching out to be called to " detection light ".) and it is passed through after delay loop (delay loops different from delay loop 22), use the PBS(PBS different from PBS26) etc. with photosynthetic ripple from femtosecond laser 14 and be back to same paths, and femtosecond laser 14 is given time delay (in Fig. 5 and Fig. 6, being denoted as " elapsed time ") and is irradiated to workpiece 40, obtain permeable material detection light absorptivity and make Fig. 5 or the figure of Fig. 6.Wherein, in the time of this mensuration, do not make nanosecond laser 16 vibrate.
Known according to the measurement result shown in Fig. 5 or Fig. 6, for soda-lime glass, SiC, after just having irradiated femtosecond laser 14 (being near in elapsed time 0), absorptivity all sharply rises, and relaxes afterwards.In addition, the variation of known this absorptivity, soda-lime glass finishes in 0.2ns left and right, and SiC finishes in 4ns left and right.The time that therefore, this absorptivity can be changed is regarded the duration of the absorptivity rising being caused by solid interior plasma or photoionization as.The duration of sometimes this absorptivity being risen below, is called " absorptivity duration ".
Next, to describing from the method for the pulse width of the light pulse of nanosecond laser 16 according to each material decision.
From the pulse width (time width) of the light pulse of nanosecond laser 16, in principle, be preferably set to and can give heat to the material of workpiece 40 efficiently, and until the process progress lasting light of the electron excitation → lattice vibration → thermal diffusion being caused by this light pulse irradiate.Consider this point, the pulse width of general preferred nanosecond laser 16 is more than 100ps.The pulse width of the light pulse from nanosecond laser 16 of below, reality being obtained by experiment describes.
After what Fig. 7 represented to measure workpiece 40 as SiC irradiated the under certain condition light from femtosecond laser 14, irradiate from example in the situation of the light of nanosecond laser 16, produce the relation between probability from the pulse width of the light pulse of nanosecond laser 16 and crackle.As known in the figure, be that 100ps Crack Near generation probability is saturated in pulse width, for the pulse width after this, crackle produces probability almost becomes steady state value.
Though not shown, if further widen pulse width, crackle produces probability and reduces, crackle produces in certain scope in the situation that in the pulse width of the irradiated light pulse from nanosecond laser 16.And as shown in the drawing, the narrower crackle of pulse width is finer.
Therefore,, as an example, the pulse width of the light pulse from nanosecond laser 16 can be made as to the minimum pulse width in the scope of the pulse width cracking.That is, be SiC at the material of workpiece 40, the pulse width of establishing as shown in Figure 7 nanosecond laser 16 is about 100ps.
Table 1 is an example of the minimum pulse width cracking obtained by experiment in the same manner as described above about various materials.Produce probability minimizing along with this pulse width becomes more short crack, finally become and do not produce (with reference to Fig. 7).Therefore, the region narrow at the above-mentioned minimum pulse width of pulse width ratio also produces a certain amount of crackle, and in this meaning, the minimum pulse width shown in table 1 is the general value with certain width of estimating.
Table 1
| Material (workpiece) | The minimum pulse width cracking |
| Quartz glass | 100fs |
| SiC | 100ps |
| GaN | 100ps |
| Soda-lime glass | 10ns |
According to the experimental result shown in table 1, if in advance certain material is changed the pulse width of nanosecond laser 16 and observe the crackle producing in workpiece 40, and obtain the minimum pulse width cracking,, in the time carrying out generating with the crackle of its same material, also this pulse width can be made as to the pulse width of nanosecond laser 16.
In addition, as shown in Figure 8, for multiple material, at the thermal coefficient of expansion of material and can generate between the minimum pulse width of microcrack and have correlation, so also can decide according to the thermal coefficient of expansion of the material of the workpiece 40 cutting the pulse width of nanosecond laser 16.That is to say, also can predict and determine this pulse width according to the physical characteristic of this material.
For example, according to Fig. 8, as an example, also can be for thermal coefficient of expansion in 3 × 10-6～7 × 10-6(1/k) scope in material, the pulse width of nanosecond laser 16 is set as below the above 1ns of 10ps, 7 × 10-6(1/k for thermal coefficient of expansion) above material, the pulse width of nanosecond laser 16 is set as below the above 20ns of 1ns.
Wherein, experimental result, except the thermal coefficient of expansion of the material of workpiece, the pyroconductivity of the material of workpiece or Young's modulus and can generate between the minimum pulse width of microcrack and also find to exist correlation.
Also can make as described above the pulse width of the nanosecond laser 16 of setting according to every kind of material and luminous power pre-stored in the not shown ROM etc. that is arranged at control part 38.
Next, the operation S102 of Fig. 2 is described.In operation S102, the absorptivity that irradiation by from the light of femtosecond laser 14 is formed partly in workpiece 40 increases region, increase the absorptivity recovery in region at this absorptivity before, namely, within the absorptivity duration, irradiate the light from nanosecond laser 16.The pulse width of nanosecond laser 16 now and luminous power are pulse width and the luminous powers of setting in operation S100.
Preferably make the light pulse of penetrating from nanosecond laser 16 and the light pulse of penetrating from femtosecond laser 14 in time or space or in time and overlapping on space (overlapping).
Fig. 3 be shown with make from the light pulse of femtosecond laser 14 with from the light pulse of nanosecond laser 16 example in overlapping situation in time.In Fig. 3, the peak value of the light pulse from nanosecond laser 16 is defined as to tD time delay with respect to the delay-time difference of the peak value of the light pulse from femtosecond laser 14.
In the example shown in Fig. 3, with respect to the peak value of the light pulse from femtosecond laser 14, from the peak delay of the light pulse of nanosecond laser 16 tD time delay, but what be first incident upon workpiece 40 is the light pulse from nanosecond laser 16.Therefore, overlapping on generation time in the light pulse from femtosecond laser 14 and between from the light pulse of nanosecond laser 16.
In Fig. 3, be also shown with in the lump absorption threshold value.As mentioned above, in the present embodiment, the peak value of the luminous power of the light pulse from femtosecond laser 14 is set as exceeding the value that absorbs threshold value.In addition, the peak value of the luminous power of the light pulse from nanosecond laser 16 is set as being less than absorption threshold value.
Shown in Fig. 9 and Figure 10, changed the variation of the absorptivity in the situation of above-mentioned time delay of tD for soda-lime glass.Fig. 9 illustrates the variation of the absorptivity in the situation of tD=0.25ns, and Figure 10 illustrates the variation of the absorptivity in the situation of tD=0.05ns.In Fig. 9 and Figure 10, except femtosecond laser 14, go back irradiation energy and be about the nanosecond laser 16 that 1.2 μ J, pulse width are about 0.1ns.In addition, the mensuration of this absorptivity is carried out with above-mentioned pumping probe method.
More clearly visible by with Fig. 5, in Figure 10, absorptivity raises, the absorptivity duration also significantly expands in addition, on the other hand in Fig. 9, with the contrast of Fig. 5 in there is no obvious difference.Therefore, can say that Figure 10 illustrates: the processed object 40 of a part of the energy of the light pulse from nanosecond laser 16 of absorptivity duration (with reference to Fig. 5) internal radiation of the 0.2ns that produces at the optical pulse irradiation by from femtosecond laser 14 left and right absorbs, further continue by absorbing the self-absorption that this energy causes by solid interior plasma or photoionization.
In addition, illustrate: for example, even from the longer situation of the pulse width of the light pulse of nanosecond laser 16 (, as an example, the pulse width of 10ns left and right), if an initial part for this light pulse is absorbed, the remainder of following light pulse thereafter is also absorbed, and in other words, can absorb light pulse in the whole time of the pulse width universe of light pulse.
In the present embodiment, will wait and obtain above-mentioned time delay tD as basis according to experiment according to every kind of material of processing object 40.
But, according to the fact shown in the result from Fig. 5 and Figure 10,, from just workpiece 40 having been irradiated to the increase that starts to produce absorptivity after the light pulse from femtosecond laser 14, if and absorb from the processed object 40 of an initial part of the light pulse of nanosecond laser 16, the remainder of following the light pulse from nanosecond laser 16 thereafter is also absorbed such fact, and time delay, tD also can independently for example be set as from about 1/2 of the pulse width (half breadth) of the light pulse of nanosecond laser 16 with material.If carry out like this setting of tD time delay, can save in advance and search the time of having irradiated the absorptivity duration after femtosecond laser 14 according to every kind of material.
In addition, in the case of hypothesis with time delay tD=0s workpiece 40 has been irradiated from the light pulse of femtosecond laser 14 and the light pulse from nanosecond laser 16, can not absorb the first half from the light pulse of nanosecond laser 16, thereby waste energy, but can not produce such problem yet.In addition, 1/2 of so-called pulse width is the general value of estimating, also can make light pulse absorb even if expand to a certain degree time delay tD, also can change into as required other fixed value.
As previously discussed, by workpiece 40 being irradiated to the light pulse from nanosecond laser (being transparent laser with respect to workpiece 40) 16, the energy of this light pulse increases region (be excited region) at absorptivity and is absorbed, and can carry out local heat to the inside of workpiece 40.Consequently, in the present embodiment, can generate fine crackle.
In the present embodiment, do as described above, and carry out the irradiation of femtosecond laser 14 and nanosecond laser 16 along predefined preset lines, can form continuously or discontinuously the crackle formation zone that has comprised microcrack.After this, also can as required, cut along this crackle formation zone by the cut-out operation based on exterior mechanical stress.
[the second embodiment]
Present embodiment is on the basis of the first embodiment, can further control the mode of the generation direction of crackle.
In the situation that utilizing laser to form crackle, usually, isotropically expand in the thermal stress of light collecting part if irradiate just round light beam, so crackle produces in any direction.Therefore, about for example selecting semi-conducting material as workpiece 40, and cut such situation after the connecting line of the direction formation crackle specifying, exist and produce the not possibility of the crackle of preferable shape.Therefore, produce the necessity of the generation direction of controlling crackle.
As the method for generation direction of controlling crackle, known have make the optically focused shape of light beam (for example there is directionality, the optically focused shape of light beam is made as to ellipse etc.), or 2 focal beam spots are set and make the methods (for example, TOHKEMY 2011-056544 communique) such as they approach to irradiate.
But, in said method, use ultra-short pulse laser, so can not add sufficient thermal stress according to material, therefore, be merely able to apply certain specific material.In addition, because needs form oval or multiple focal beam spots, so institute's energy requirement of laser becomes large.And, there is the light pulse from nanosecond laser for the sufficient pulse width of extra heat stress if use, make to produce Multiphoton Absorbtion, energy that need to be larger compared with pulse, so that crackle can become is excessive.
In addition, even in the case of using the mixed pulses of the pulse of femtosecond laser and the pulse of nanosecond laser, when for Femtosecond Optical Pulses and these both sides of nanosecond light pulse, when being all made as ellipse or being made as multiple focal beam spot, the light energy of Femtosecond Optical Pulses needs more than one times compared with the situation of single-spot, so not preferred for cheap and processing at a high speed.
Present embodiment is characterised in that, the scope that is directed to the absorptivity increase region being produced by Femtosecond Optical Pulses becomes wider (by rule of thumb than the scope of the focal beam spot of this Femtosecond Optical Pulses, the area that absorptivity increases region is the more than 4 times of area of the focal beam spot of Femtosecond Optical Pulses), and utilize Femtosecond Optical Pulses to irradiate to reduce institute's energy requirement with single-spot, and only control the optically focused shape of nanosecond light pulse, carry out thus the control of the generation direction of crackle.
Below, present embodiment is further elaborated, first, with reference to Figure 11 and Figure 12, relation between long axis direction and direction of check to the ellipse light spot penetrating from nanosecond laser 16 describes, Figure 11 and Figure 12 be in Fig. 1 from the surface with respect to workpiece 40 vertical direction observe the figure of the inside gained of workpiece 40.
As shown in Figure 11 (a) shows, if the light penetrating from femtosecond laser 14 at the inside of workpiece 40 optically focused, after the processed object of this light 40 absorbs, this light collecting part with and around produce solid interior plasma.If the light pulse that this solid interior plasma absorption is penetrated from nanosecond laser 16, the overlapping region of this solid interior plasma and the ellipse light spot that penetrates from this nanosecond laser 16 is heated, anisotropically spread in this region thermal stress, crack at the long axis direction of this ellipse light spot.Therefore,, as shown in Figure 11 (b), if irradiate the oval light pulse from nanosecond laser 16 for example in X-direction with major axis, crackle produces in X-direction.
Therefore, if use the nanosecond laser 16 with the hot spot shown in Figure 11 (b), and as shown in Figure 12 (a), irradiate on one side from the light pulse of femtosecond laser 14 with from the light pulse one edge X-direction scanning machining object 40 of nanosecond laser 16, can with want cutting line parallel crack, so can obtain as the object of present embodiment, in the generation of the microcrack corresponding with the material of workpiece 40 preferred state.On the other hand, as shown in Figure 12 (b), if the major axis of the ellipse light spot in the ejaculation light from nanosecond laser 16 scans along X-direction under the state of Y direction, vertically crack with the line of wanting cutting, so not preferred.
As previously discussed, in the present embodiment, the long axis direction of the light pulse from nanosecond laser 16 with ellipse light spot is set as with to cut preset lines parallel.By such structure, can generate microcrack in preferred orientations according to the material of workpiece, and can carry out fine and cut.
In addition, as shown in Figure 13 (a) or Figure 13 (b), also the cut surface (face producing by cutting, XZ face) that can establish workpiece 40 and the major axis parallel (direction of check is parallel with cut surface) of the light pulse from nanosecond laser 16 with ellipse light spot.Also can aspect cutting processing object 40, make crackle towards in preferred direction according to this structure.
And, except the hot spot of the ejaculation light from nanosecond laser 16 is made as oval method, as shown in figure 14, also the hot spot of the ejaculation light from nanosecond laser 16 can be made as roughly just roundly, and irradiate multiple (being 2) this hot spot in Figure 14.Direction of check in this situation, as represented with arrow in the drawings, becomes the direction having linked from the straight line at the center of the hot spot of the ejaculation light of nanosecond laser 16.
As previously discussed, in the present embodiment, the long axis direction of the light pulse from nanosecond laser 16 with ellipse light spot is set as parallel with cut surface.Or, link is there is to the direction setting of multiple roughly lines that the center of the hot spot of the light pulse from nanosecond laser of positive circular light spot forms for parallel with cutting preset lines.According to such structure, can generate microcrack in preferred orientations according to the material of workpiece, and can carry out the cutting of fine.
Claims (10)
1. a crackle generation method, is characterized in that,
From the first LASER Light Source, workpiece is irradiated to the first light pulse, thereby the inside at described workpiece forms along predefined preset lines the first area that absorptivity temporarily uprises, this first light pulse has predefined the first pulse width and makes the luminous intensity of the material production Multiphoton Absorbtion of described workpiece
And before the absorptivity of the described first area temporarily having uprised at absorptivity restores, from the second LASER Light Source, at least a portion of described first area is irradiated the second light pulse and made this at least a portion absorb the second light pulse, come to generate crackle along described predefined preset lines at described workpiece, this second light pulse has for the material of described workpiece and the luminous intensity of the predefined material production Multiphoton Absorbtion that does not make described workpiece and second pulse width wider than described the first pulse width.
2. crackle generation method according to claim 1, is characterized in that,
Irradiating described the second light pulse from described the second LASER Light Source is to instigate described the second light pulse and upper overlapping described the second light pulse of irradiating of at least one party of described the first light pulse in time and space.
3. according to claim 1 or crackle generation method claimed in claim 2, it is characterized in that,
Described the second pulse width is set to the corresponding value of minimum pulse width in the pulse width of described the second LASER Light Source with can generate crackle in described workpiece time.
According to claim 1 to the crackle generation method described in any one in claim 3, it is characterized in that,
The predefined time of the peak delay of the first light pulse described in the peakedness ratio of described the second light pulse.
According to claim 1 to the crackle generation method described in any one in claim 4, it is characterized in that,
At least one in thermal coefficient of expansion, pyroconductivity and the Young's modulus of the material based on described workpiece set described the second pulse width.
According to claim 1 to the crackle generation method described in any one in claim 5, it is characterized in that,
Irradiating described the first light pulse is to irradiate in the mode of the first light pulse described in the inside optically focused at described workpiece,
Irradiating described the second light pulse is to irradiate in the mode of the second light pulse described in the inside optically focused at described workpiece,
According at least one that generates the direction of crackle and control in size, shape and the number of optically focused part of described the first light pulse and described the second light pulse.
7. crackle generation method according to claim 6, is characterized in that,
The shape of the described optically focused part of described the second light pulse is elliptical shape, and this oval major axis is parallel with described predefined preset lines.
8. crackle generation method according to claim 6, is characterized in that,
The number of the described optically focused part of described the second light pulse is multiple, and the straight line at center that links each optically focused part is parallel with described predefined preset lines.
9. a cutting method of utilizing laser, is characterized in that,
Right to use requires the 1 crackle generation method of recording to any one in claim 8,
And carry out the cutting of described workpiece along described predefined preset lines.
10. a crackle generating apparatus, is characterized in that, comprising:
The first LASER Light Source, the light of ejaculation pulse type;
The second LASER Light Source, the light of ejaculation pulse type;
Irradiate control module, according to making from described the first LASER Light Source, workpiece to be irradiated the first LASER Light Source described in the mode control of the first light pulse, to make forming in the inside of described workpiece the first area that absorptivity temporarily uprises, this first light pulse has predefined the first pulse width and makes the luminous intensity of the material production Multiphoton Absorbtion of workpiece, and
Before restoring according to the absorptivity of the described first area temporarily having uprised at absorptivity, make from the second LASER Light Source, at least a portion of described first area to be irradiated the second LASER Light Source described in the mode control of the second light pulse, thereby generate crackle at described processing object, this second light pulse has for the material of described workpiece and the luminous intensity of the predefined material production Multiphoton Absorbtion that does not make described workpiece and wide the second pulse width than the first pulse width; And
Mobile unit, at least one party in described workpiece and described the first LASER Light Source and described the second LASER Light Source is moved, irradiate from described first light pulse of described the first LASER Light Source and from described second light pulse of described the second LASER Light Source along predefined preset lines making.
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| CN115609163A (en) * | 2021-09-22 | 2023-01-17 | 西湖仪器(杭州)技术有限公司 | Silicon carbide ingot slicing method, device and application |
| CN114101942A (en) * | 2021-11-29 | 2022-03-01 | 武汉锐科光纤激光技术股份有限公司 | Method, device and apparatus for controlling cutting of material, storage medium and electronic apparatus |
| CN114453770A (en) * | 2022-03-10 | 2022-05-10 | 浙江大学杭州国际科创中心 | Method for double-pulse femtosecond laser slicing of SiC substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5836998B2 (en) | 2015-12-24 |
| CN104117775B (en) | 2017-04-12 |
| TW201511877A (en) | 2015-04-01 |
| JP2014213334A (en) | 2014-11-17 |
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