CN109728014B - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN109728014B
CN109728014B CN201811241434.5A CN201811241434A CN109728014B CN 109728014 B CN109728014 B CN 109728014B CN 201811241434 A CN201811241434 A CN 201811241434A CN 109728014 B CN109728014 B CN 109728014B
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pixel
imaging device
layer
phase difference
pixels
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Chinese (zh)
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CN109728014A (zh
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朝妻智彦
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
CN201811241434.5A 2013-07-03 2014-06-25 摄像装置 Active CN109728014B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013-139832 2013-07-03
JP2013139832A JP6103301B2 (ja) 2013-07-03 2013-07-03 固体撮像装置およびその製造方法、並びに電子機器
CN201480023244.XA CN105190891B (zh) 2013-07-03 2014-06-25 固态摄像装置及其制造方法与电子设备
PCT/JP2014/003401 WO2015001769A2 (en) 2013-07-03 2014-06-25 Solid-state image-capturing device and production method thereof, and electronic appliance

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CN201480023244.XA Division CN105190891B (zh) 2013-07-03 2014-06-25 固态摄像装置及其制造方法与电子设备

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CN109728014A CN109728014A (zh) 2019-05-07
CN109728014B true CN109728014B (zh) 2022-11-18

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CN201480023244.XA Active CN105190891B (zh) 2013-07-03 2014-06-25 固态摄像装置及其制造方法与电子设备

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US (4) US9978786B2 (enExample)
JP (1) JP6103301B2 (enExample)
KR (2) KR102383190B1 (enExample)
CN (2) CN109728014B (enExample)
TW (1) TWI654750B (enExample)
WO (1) WO2015001769A2 (enExample)

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JP7383876B2 (ja) * 2018-02-02 2023-11-21 株式会社ニコン 撮像素子、及び、撮像装置
KR102507207B1 (ko) * 2018-04-11 2023-03-09 에스케이하이닉스 주식회사 낮은 굴절률을 갖는 패싱 필터를 포함하는 이미지 센서
CN110739321B (zh) 2018-07-18 2025-06-17 索尼半导体解决方案公司 受光元件以及测距模块
KR102593949B1 (ko) * 2018-07-25 2023-10-27 삼성전자주식회사 이미지 센서
KR102638740B1 (ko) 2018-12-12 2024-02-22 삼성전자주식회사 3차원 반도체 메모리 소자
WO2020195825A1 (ja) * 2019-03-25 2020-10-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
KR102730016B1 (ko) * 2019-09-06 2024-11-14 에스케이하이닉스 주식회사 이미지 센싱 장치
TWI792016B (zh) * 2019-12-11 2023-02-11 神盾股份有限公司 指紋感測系統及其使用方法
JP7503399B2 (ja) * 2020-03-16 2024-06-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
JP2021175048A (ja) * 2020-04-22 2021-11-01 ソニーセミコンダクタソリューションズ株式会社 電子機器
US11276793B2 (en) * 2020-06-04 2022-03-15 Visera Technologies Company Limited Semiconductor device
CN116134619A (zh) * 2020-07-30 2023-05-16 松下知识产权经营株式会社 光检测器、固体摄像元件、以及光检测器的制造方法
US11495048B2 (en) 2020-08-17 2022-11-08 Au Optronics Corporation Fingerprint sensing module
KR20220128698A (ko) 2021-03-15 2022-09-22 에스케이하이닉스 주식회사 이미지 센싱 장치
KR20240037943A (ko) * 2021-08-06 2024-03-22 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
CN114040083A (zh) * 2021-11-30 2022-02-11 维沃移动通信有限公司 图像传感器、摄像模组以及电子设备
JP2023150251A (ja) * 2022-03-31 2023-10-16 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
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Also Published As

Publication number Publication date
TW201508905A (zh) 2015-03-01
JP6103301B2 (ja) 2017-03-29
JP2015015295A (ja) 2015-01-22
US9978786B2 (en) 2018-05-22
US12087787B2 (en) 2024-09-10
TWI654750B (zh) 2019-03-21
US20220102400A1 (en) 2022-03-31
KR20210043002A (ko) 2021-04-20
CN109728014A (zh) 2019-05-07
US20200279882A1 (en) 2020-09-03
CN105190891A (zh) 2015-12-23
WO2015001769A3 (en) 2015-03-05
CN105190891B (zh) 2019-05-10
KR102383190B1 (ko) 2022-04-08
US20160343753A1 (en) 2016-11-24
KR20160029727A (ko) 2016-03-15
US11211410B2 (en) 2021-12-28
US20180366501A1 (en) 2018-12-20
WO2015001769A2 (en) 2015-01-08
US10685998B2 (en) 2020-06-16

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