CN109704774B - 一种代替碳砖的高炉炉底炉缸高导热率浇注料的制备方法 - Google Patents
一种代替碳砖的高炉炉底炉缸高导热率浇注料的制备方法 Download PDFInfo
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Abstract
本发明公开了一种代替碳砖的高炉炉底炉缸高导热率浇注料的制备方法,包括主要原料为碳化硅,辅料为纯铝酸盐水泥、酚醛树脂粉、废电极颗粒和α‑Al2O3粉等,将碳化硅碾磨成颗粒(粒度0‑1mm,粒度1‑3mm以及粒度3‑5mm),废电极颗粒磨成颗粒(1‑3mm),纯铝酸盐水泥、酚醛树脂粉、和α‑Al2O3粉的粒度均小于300目。该种制备的浇注料硬度好,导热率高,机械性能强,相比于一般的碳砖材料,炉底高导热浇注料的原料来源广、成本低、性能优良,适合应用于高炉炉底、炉缸等恶劣的工作环境中。
Description
技术领域
本发明涉及一种制备方法,具体为一种代替碳砖的高炉炉底炉缸浇注料的制备方法,属于无机非金属材料的合成技术领域。
背景技术
伴随着钢铁的限量生产,环境污染得到了有效改善,然而高炉长期非持续性运作导致的严重的炉底侵蚀、炉缸烧穿、高炉寿命明显缩短也成为困扰我国钢铁冶炼行业的技术难题。
高炉作为大型的高温冶炼容器,炉内高温及时的热传导十分重要,配备高性能的导热材料才能使其稳定运行。目前,应用较多炉底、炉缸的耐火材料多选用碳砖,这是由于碳砖中的石墨具有高导热性、低热膨胀性,以及与炉渣的不润湿性。各大钢铁厂季度停炉停产使得高炉以往的长期连续作业生产被打破。反复的停炉点火导致的热应力不稳定和炉震加速了碳砖膨胀开裂与粉化,严重加剧了铁水对碳砖的侵蚀。当炭砖侵蚀一定厚度时,温度分布不均匀,炉底和炉缸侧壁温度梯度非常大,炭砖热面完全接近铁水温度,而冷面最低温度也已接近700℃,若不及时采取措施,极易发生炉缸烧穿。
因此,针对上述问题提出一种代替碳砖的高炉炉底炉缸浇注料的制备方法。相比于导热性较差和易脆裂粉化的碳砖,本发明制备的以碳化硅为主料的浇注料具有更好的高温导热率和抗震强度,高温下的耐压强度也完全符合高炉炉底炉缸用料的要求,并且原料来源广,成本更低,制备工艺简单方便,优势非常明显。
发明内容
本发明的目的就在于为了解决上述问题而提供一种代替碳砖的高炉炉底炉缸浇注料的制备方法。
本发明通过以下技术方案来实现上述目的,一种代替碳砖的高炉炉底炉缸浇注料的制备方法,所述制备方法包括如下步骤:
(1)原料选取,主要原料为碳化硅,纯铝酸盐水泥、酚醛树脂粉、废电极颗粒和α-Al2O3粉等;
(2)将碳化硅碾磨成颗粒,废电极碾磨成颗粒,纯铝酸盐水泥、酚醛树脂粉和α-Al2O3粉粒度研磨至均小于300目;
(3)主要原料中分别取碳化硅的质量分数为65-70%备用,辅料中分别取纯铝酸盐水泥的质量分数为3-8%、酚醛树脂粉的质量分数为10-15%、α-Al2O3粉的质量分数为3-8%以及废电极颗粒的质量分数为8-15%备用;
(4)碳化硅颗粒、废电极颗粒、酚醛树脂粉、三氧化二铝微粉、纯铝酸盐水泥放进搅拌机内室温混合5分钟,并加入6-8%的水进行均匀搅拌混合,待混合完成后进行浇注,放置12-24小时即可得到凝固的炉底高导热浇注料。
优选的,所述碳化硅碾磨成颗粒为粒度0-1mm,40%;粒度1-3mm,20%;粒度3-5mm,40%。废电极碾磨成颗粒为粒度1-3mm,纯铝酸盐水泥、酚醛树脂粉、α-Al2O3粉的粒度均小于300目
优选的,所述的一种代替碳砖的高炉炉底炉缸浇注料的制备方法,其特征在于:在室温下先将原料混匀5分钟,之后配水6-8%搅拌均匀,浇筑后经过12-24小时凝固。
优选的,所述碳化硅选用六方晶体的黑色碳化硅,且碳化硅、废电极颗粒、酚醛树脂粉、三氧化二铝微粉、以及纯铝酸盐水泥等制备原料来源广、成本低。
本发明的有益效果是:该制备的炉底高导热浇注料硬度高,导热性好,机械性能强,相比于一般的炉底碳砖,碳化硅浇注料原料来源广、成本低、性能优良,适合应用于高炉炉底、炉缸等恶劣工作环境中。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一:
一种代替碳砖的高炉炉底炉缸浇注料的制备方法,所述制备方法如下:
所述制备方法包括如下步骤:
(1)原料选取,主要原料为碳化硅,辅料为废电极、酚醛树脂粉、三氧化二铝微粉、纯铝酸盐水泥;
(2)将碳化硅碾磨成颗粒,废电极碾磨成颗粒,酚醛树脂粉、三氧化二铝微粉以及纯铝酸盐水泥的粒度分别碾磨成颗粒;
(3)主要原料中分别取碳化硅的质量分数为68%备用,辅料中分别取纯铝酸盐水泥的质量分数为5%、酚醛树脂粉的质量分数为12%、α-Al2O3粉的质量分数为5%以及废电极颗粒的质量分数为10%备用;
(4)碳化硅、废电极、酚醛树脂粉、三氧化二铝微粉以及纯铝酸盐水泥放进搅拌机内室温混合,并加入适量的水进行均匀搅拌混合,待混合完成后进行浇注,放置待其凝固即可;
进一步,所述碳化硅碾磨成颗粒为粒度0-1mm,40%;粒度1-3mm,20%;粒度3-5mm,40%。废电极碾磨成颗粒为粒度1-3mm,纯铝酸盐水泥、酚醛树脂粉、α-Al2O3粉的粒度均小于300目。
进一步,所述在室温下先将原料混匀5分钟,之后配水7%搅拌均匀,浇筑后经过24小时凝固。
进一步,所述碳化硅选用六方晶体的黑色碳化硅,且碳化硅、废电极、酚醛树脂粉、三氧化二铝微粉、纯铝酸盐水泥制备原料来源广、成本低。
上述制备方法碳化硅浇注料导热系数为18W/(m*K),抗压强度为38MPa,耐磨性好,机械性能强。
实施例二:
一种代替碳砖的高炉炉底炉缸浇注料的制备方法,所述制备方法如下:
所述制备方法包括如下步骤:
(1)原料选取,主要原料为碳化硅,辅料为废电极、酚醛树脂粉、三氧化二铝微粉、纯铝酸盐水泥;
(2)将碳化硅碾磨成颗粒,废电极碾磨成颗粒,酚醛树脂粉、三氧化二铝微粉以及纯铝酸盐水泥的粒度分别碾磨成颗粒;
(3)主要原料中分别取碳化硅的质量分数为70%备用,辅料中分别取纯铝酸盐水泥的质量分数为4%、酚醛树脂粉的质量分数为10%、α-Al2O3粉的质量分数为8%以及废电极颗粒的质量分数为8%备用;
(4)碳化硅、废电极、酚醛树脂粉、三氧化二铝微粉以及纯铝酸盐水泥放进搅拌机内室温混合,并加入适量的水进行均匀搅拌混合,待混合完成后进行浇注,放置待其凝固即可;
进一步,所述碳化硅碾磨成颗粒为粒度0-1mm,40%;粒度1-3mm,20%;粒度3-5mm,40%。废电极碾磨成颗粒为粒度1-3mm,纯铝酸盐水泥、酚醛树脂粉、α-Al2O3粉的粒度均小于300目。
进一步,所述在室温下先将原料混匀5分钟,之后配水7%搅拌均匀,浇筑后经过24小时凝固。
进一步,所述碳化硅选用六方晶体的黑色碳化硅,且碳化硅、废电极、酚醛树脂粉、三氧化二铝微粉、纯铝酸盐水泥制备原料来源广、成本低。
上述制备方法碳化硅浇注料导热系数为20W/(m*K),抗压强度为40MPa,耐磨性好,机械性能强。
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何标记视为限制所涉及的权利要求。
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。
Claims (7)
1.一种代替碳砖的高炉炉底炉缸浇注料的制备方法,其特征在于:所述制备方法包括如下步骤:
(1)原料选取:主要原料为碳化硅颗粒,辅料为纯铝酸盐水泥、酚醛树脂粉、废电极颗粒、α-Al2O3粉;
(2)将碳化硅碾磨成颗粒,废电极碾磨成颗粒,纯铝酸盐水泥、酚醛树脂粉、及α-Al2O3粉的粒度分别碾磨成颗粒;
(3)主要原料中分别取碳化硅的质量分数为65-70%备用,辅料中分别取纯铝酸盐水泥的质量分数为3-8%、酚醛树脂粉的质量分数为10-15%、α-Al2O3粉的质量分数为3-8%以及废电极颗粒的质量分数为8-15%备用;
(4)碳化硅颗粒、废电极颗粒、酚醛树脂粉、三氧化二铝微粉、纯铝酸盐水泥放进搅拌机内室温混合2-15分钟,并加入质量分数6-8%的水进行均匀搅拌混合,待混合完成后进行浇注,放置12-24小时即可得到凝固的浇注料。
2.根据权利要求1所述的一种代替碳砖的高炉炉底炉缸浇注料的制备方法,其特征在于:所述碳化硅碾磨成颗粒为粒度0-1mm,质量分数40%,粒度1-3mm,质量分数20%,粒度3-5mm,质量分数40%。
3.根据权利要求1所述的一种代替碳砖的高炉炉底炉缸浇注料的制备方法,其特征在于:废电极碾磨成颗粒为粒度1-3mm。
4.根据权利要求1所述的一种代替碳砖的高炉炉底炉缸浇注料的制备方法,其特征在于:纯铝酸盐水泥、酚醛树脂粉、α-Al2O3粉的粒度均小于300目。
5.根据权利要求1所述的一种代替碳砖的高炉炉底炉缸浇注料的制备方法,其特征在于:在室温下先将原料混匀5分钟,之后配水6-8%搅拌均匀,浇筑后经过12-24小时凝固。
6.根据权利要求1所述的一种代替碳砖的高炉炉底炉缸浇注料的制备方法,其特征在于:所述碳化硅选用六方晶体的黑色碳化硅。
7.根据权利要求1所述方法制备的代替碳砖的高炉炉底炉缸浇注料,其特征在于:制得的浇注料的导热系数为15W-25W/(m·K),抗压强度为30MPa-50MPa。
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