CN109698118B - 芯片的制造方法 - Google Patents

芯片的制造方法 Download PDF

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Publication number
CN109698118B
CN109698118B CN201811200560.6A CN201811200560A CN109698118B CN 109698118 B CN109698118 B CN 109698118B CN 201811200560 A CN201811200560 A CN 201811200560A CN 109698118 B CN109698118 B CN 109698118B
Authority
CN
China
Prior art keywords
workpiece
modified layer
laser processing
dividing
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811200560.6A
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English (en)
Chinese (zh)
Other versions
CN109698118A (zh
Inventor
淀良彰
赵金艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN109698118A publication Critical patent/CN109698118A/zh
Application granted granted Critical
Publication of CN109698118B publication Critical patent/CN109698118B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201811200560.6A 2017-10-24 2018-10-16 芯片的制造方法 Active CN109698118B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017205349A JP6991656B2 (ja) 2017-10-24 2017-10-24 チップの製造方法
JP2017-205349 2017-10-24

Publications (2)

Publication Number Publication Date
CN109698118A CN109698118A (zh) 2019-04-30
CN109698118B true CN109698118B (zh) 2024-02-20

Family

ID=66229725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811200560.6A Active CN109698118B (zh) 2017-10-24 2018-10-16 芯片的制造方法

Country Status (4)

Country Link
JP (1) JP6991656B2 (https=)
KR (1) KR102588040B1 (https=)
CN (1) CN109698118B (https=)
TW (1) TWI774865B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7334065B2 (ja) * 2019-05-28 2023-08-28 株式会社ディスコ チップの製造方法
CN110271103A (zh) * 2019-06-20 2019-09-24 深圳市圆梦精密技术研究院 激光辅助旋转超声波加工机床及加工方法
JP7326053B2 (ja) * 2019-07-11 2023-08-15 株式会社ディスコ 被加工物の加工方法
JP7467208B2 (ja) * 2020-04-06 2024-04-15 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP7648375B2 (ja) * 2020-12-17 2025-03-18 株式会社ディスコ ウエーハの生成装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135964A (ja) * 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2012130952A (ja) * 2010-12-22 2012-07-12 Hamamatsu Photonics Kk レーザ加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
CN105789125A (zh) * 2015-01-09 2016-07-20 株式会社迪思科 晶片的加工方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP2003151918A (ja) * 2001-11-12 2003-05-23 Sony Corp ダイシングテーブルおよびこれを用いたダイシング装置
JP2004273899A (ja) * 2003-03-11 2004-09-30 Sony Corp ウェーハ保持用治具、同治具を用いた半導体製造装置
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP4769560B2 (ja) * 2005-12-06 2011-09-07 株式会社ディスコ ウエーハの分割方法
JP2010003817A (ja) * 2008-06-19 2010-01-07 Tokyo Seimitsu Co Ltd レーザーダイシング方法及びレーザーダイシング装置
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP6013859B2 (ja) * 2012-10-01 2016-10-25 株式会社ディスコ ウェーハの加工方法
US9812361B2 (en) * 2013-09-11 2017-11-07 Nxp B.V. Combination grinding after laser (GAL) and laser on-off function to increase die strength
JP6223804B2 (ja) * 2013-12-09 2017-11-01 株式会社ディスコ ウェーハ加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135964A (ja) * 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2012130952A (ja) * 2010-12-22 2012-07-12 Hamamatsu Photonics Kk レーザ加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
CN105789125A (zh) * 2015-01-09 2016-07-20 株式会社迪思科 晶片的加工方法

Also Published As

Publication number Publication date
KR102588040B1 (ko) 2023-10-11
JP6991656B2 (ja) 2022-01-12
TW201917784A (zh) 2019-05-01
JP2019079917A (ja) 2019-05-23
KR20190045840A (ko) 2019-05-03
CN109698118A (zh) 2019-04-30
TWI774865B (zh) 2022-08-21

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