CN109698059A - 线圈电子组件及其制造方法 - Google Patents

线圈电子组件及其制造方法 Download PDF

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CN109698059A
CN109698059A CN201811175648.7A CN201811175648A CN109698059A CN 109698059 A CN109698059 A CN 109698059A CN 201811175648 A CN201811175648 A CN 201811175648A CN 109698059 A CN109698059 A CN 109698059A
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曺廷昊
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Samsung Electro Mechanics Co Ltd
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Abstract

本公开提供一种线圈电子组件及其制造方法，所述线圈电子组件包括：主体，包括多个绝缘层和设置在所述多个绝缘层上的线圈图案；以及外电极，形成在所述主体的外表面上并且连接到所述线圈图案。所述多个绝缘层包括Ni‑Cu‑Zn基铁氧体，并且基于摩尔比，所述Ni‑Cu‑Zn基铁氧体具有从5％至15％的范围内的Ni含量、从5％至10％的范围内的Cu含量以及从28％至35％的范围内的Zn含量。

Description

线圈电子组件及其制造方法
本申请要求于2017年10月24日提交到韩国知识产权局的第10-2017-0138342号韩国专利申请的优先权的权益，所述韩国专利申请的公开内容通过引用被全部包含于此。
技术领域
本公开涉及一种线圈电子组件及其制造方法。
背景技术
电感器(一种线圈电子组件)是可与电阻器和电容器一起被用于电子电路中的组件，并且被用作用于消除噪声或形成LC谐振电路的组件。在这种情况下，电感器可根据线圈的形式被分为诸如多层电感器、绕组电感器、薄膜电感器等的各种形式。
多层电感器通过如下方法实现电感：在利用磁性物质作为主要材料形成的绝缘片上利用导电膏形成线圈图案并且堆叠线圈图案以在多层烧结体中形成线圈。代表性的磁性物质是Ni-Cu-Zn基铁氧体。已知的是：Ni-Cu-Zn基铁氧体的可获得的最大的磁导率为1200的水平。然而，在内电极和所述铁氧体被同时烧结的情况下，所述铁氧体应该在相对低的温度下被烧结。结果，难以充分实现Ni-Cu-Zn基铁氧体的理论磁导率。
近来，对从1KHz至300KHz的低频噪声的规定已经变得严格。这样的趋势在汽车部件领域等中愈演愈烈，并且可通过提高多层电感器的磁导率来应对这样的趋势。
为了确保高的磁导率，使用了Mn-Zn基铁氧体。然而，Mn-Zn基铁氧体根据温度在特性方面具有大的变化，并且可能不容易满足与金属的共烧条件。
发明内容
本公开的一方面可提供一种线圈电子组件，该线圈电子组件能够提高使用Ni-Cu-Zn基铁氧体的多层线圈电子组件的诸如磁导率等的特性。
根据本公开的一方面，一种线圈电子组件可包括：主体，包括多个绝缘层和设置在所述多个绝缘层上的线圈图案；以及外电极，形成在所述主体的外表面上并且连接到所述线圈图案，其中，所述多个绝缘层包括Ni-Cu-Zn基铁氧体，并且基于摩尔比，所述Ni-Cu-Zn基铁氧体具有5％至15％的Ni含量、5％至10％的Cu含量以及28％至35％的Zn含量。
所述Ni-Cu-Zn基铁氧体的晶粒的平均尺寸可以是10μm或更大。
所述Ni-Cu-Zn基铁氧体的晶粒的平均尺寸可以是从10μm至20μm。
所述Ni-Cu-Zn基铁氧体可具有1500或更高的磁导率。
所述Ni-Cu-Zn基铁氧体可在1％至5％的氧分压的环境下被烧结。
基于所述摩尔比，所述Ni-Cu-Zn基铁氧体中的铁(Fe)的含量可以是45％至55％。
所述Ni-Cu-Zn基铁氧体可不包含烧结制备组分。
所述Ni-Cu-Zn基铁氧体可不包含V、Bi或Si。
多个线圈图案可被堆叠。
所述线圈电子组件还可包括使所述多个线圈图案彼此连接的多个导电过孔。
所述线圈图案可包括银(Ag)。
根据本公开的另一方面，一种制造线圈电子组件的方法可包括以下步骤：形成包括多个绝缘层和设置在所述多个绝缘层上的线圈图案的主体；以及烧结所述主体，其中，所述多个绝缘层包括Ni-Cu-Zn基铁氧体，并且基于所述Ni-Cu-Zn基铁氧体的摩尔比，所述Ni-Cu-Zn基铁氧体具有从5％至15％的范围内的Ni含量、从5％至10％的范围内的Cu含量以及从28％至35％的范围内的Zn含量。
附图说明
通过下面结合附图进行的详细描述，本公开的以上和其他方面、特征及其他优点将被更加清楚地理解，在附图中：
图1是示意性示出根据本公开的示例性实施例的内部线圈图案被暴露的线圈电子组件的透视图；
图2示出了根据本公开的示例性实施例的图1的线圈电子组件中的线圈图案的形式；
图3示意性示出了图1的线圈电子组件中使用的绝缘层可具有的晶粒的形式；
图4是示出Ni-Cu-Zn基铁氧体在低氧分压环境条件下的烧结行为的示图；以及
图5和图6示出了通过测量在不同的氧分压下烧结的Ni-Cu-Zn基铁氧体的电感和RX交叉频率特性获得的结果。
具体实施方式
现在将在下文中参照附图详细地描述本公开的示例性实施例。
图1是示意性示出根据本公开的示例性实施例的内部线圈图案被暴露的线圈电子组件的透视图。图2示出了根据本公开的示例性实施例的图1的线圈电子组件中的线圈图案的形式。此外，图3示意性示出了图1的线圈电子组件中使用的绝缘层可具有的晶粒的形式。
参照图1和图2，根据本示例性实施例的线圈电子组件100可具有主要包括主体110、线圈部120和外电极130的结构。构成主体110的多个绝缘层111可包括Ni-Cu-Zn基铁氧体。在下文中，将描述构成线圈电子组件100的各个组件。
主体110可包括多个绝缘层111和设置在多个绝缘层111上的线圈部120。构成主体110的多个绝缘层111可以是Ni-Cu-Zn基铁氧体的烧结体。线圈部120可包括堆叠的多个线圈图案121，并且线圈图案121可根据堆叠方向形成螺旋线圈的形式。在这种情况下，形成在不同的高度的线圈图案121可通过导电过孔124彼此连接。此外，线圈部120可包括引线部123，引线部123从主体110向外引出以使设置在绝缘层的最上部分和最下部分上的线圈图案121连接到外电极130。引线部123可通过使用与线圈图案121的材料和工艺相同的材料和工艺形成。
线圈图案121可通过在多个绝缘层111上以预定厚度印刷包括导电金属的导电膏形成。形成线圈图案121的导电金属没有具体地限制，只要是具有优异的导电性的金属即可。例如，导电金属可以是银(Ag)、钯(Pd)、铝(Al)、镍(Ni)、钛(Ti)、金(Au)、铜(Cu)、铂(Pt)等中的一种金属或者其混合物。在线圈图案121包括具有低熔点的银(Ag)的情况下，由于需要降低包括在绝缘层111中的Ni-Cu-Zn基铁氧体的烧结温度，因此增大Ni-Cu-Zn基铁氧体的磁导率存在限制。根据本示例性实施例，即使在低温下烧结包括银(Ag)的线圈图案121的情况下，也可通过调节Ni-Cu-Zn基铁氧体的晶粒的成分和尺寸而获得高水平的磁导率。
外电极130可形成在主体110的外表面上以连接到线圈图案121，并且如图1所示，外电极130可连接到引线部123。外电极130可利用具有优异的导电性的金属(例如，镍(Ni)、铜(Cu)、锡(Sn)和银(Ag)中的一种或其合金)形成。
如上所述，根据本示例性实施例，绝缘层111可包括Ni-Cu-Zn基铁氧体。根据本公开，可在不增大烧结温度的同时通过将特定成分范围的Ni-Cu-Zn基铁氧体中的晶粒的尺寸调节为相对地大来实现大约1500或更高的高的磁导率。基于Ni-Cu-Zn基铁氧体的摩尔比，Ni-Cu-Zn基铁氧体可具有从5％至15％的范围内的Ni含量、从5％至10％的范围内的Cu含量以及从28％至35％的范围内的Zn含量。当Ni-Cu-Zn基铁氧体具有上面提及的成分范围时，确认的是：所述铁氧体的晶体生长在低氧分压条件下被加速。此外，基于Ni-Cu-Zn基铁氧体的摩尔比，铁(Fe)(Ni-Cu-Zn基铁氧体中的主要组分)可具有从45％至55％的范围内的含量。在满足本示例性实施例提出的成分范围和烧结条件的情况下，即使不单独地添加烧结制备组分，所述铁氧体的晶粒g也可由于优异的烧结性而形成为是大的。因此，Ni-Cu-Zn基铁氧体可不包含烧结制备组分。烧结制备组分的代表性示例可包括通常分别以V2O5、Bi2O3和SiO2的形式添加的钒(V)、铋(Bi)和硅(Si)组分。然而，当添加烧结制备组分时，磁导率会减小。考虑到这一点，根据本示例性实施例的Ni-Cu-Zn基铁氧体中不使用烧结制备组分。例如，根据本示例性实施例的Ni-Cu-Zn基铁氧体可不包含V、Bi或Si。
参照图3，随着晶粒生长的加速，Ni-Cu-Zn基铁氧体的晶粒g可形成为比常规的晶粒大。具体地，晶粒的平均尺寸可以为10μm或更大。更具体地，Ni-Cu-Zn基铁氧体的晶粒的平均尺寸可在10μm至20μm的范围内。这样的晶粒的平均尺寸明显大于常规的Ni-Cu-Zn基铁氧体的晶粒的尺寸，常规的Ni-Cu-Zn基铁氧体的晶粒的尺寸通常为大约1μm至2μm，并且即使当添加了液态烧结制备组分时，常规的Ni-Cu-Zn基铁氧体的晶粒的尺寸为大约4μm至5μm。这里，晶粒的尺寸可被定义为通过测量单独的晶粒的面积并且将该面积转换为具有相同面积的圆的直径而获得的当量圆直径。
当具有如上所述的成分范围的Ni-Cu-Zn基铁氧体在低氧分压条件下被烧结时，具有如上所述的成分范围的Ni-Cu-Zn基铁氧体的晶粒生长可被加速并且其晶粒的尺寸可被增大。这将参照图4至图6进行描述，图4是示出Ni-Cu-Zn基铁氧体在低氧分压环境条件下的烧结行为的示图。图5和图6示出了通过测量在不同的氧分压下烧结的Ni-Cu-Zn基铁氧体的电感和RX交叉频率特性获得的结果。这里，RX交叉频率是在Ni-Cu-Zn基铁氧体的电阻R和电感X彼此相等处的频率，并且总体上示出与材料的磁导率成反比的趋势。
参照图4，在Ni-Cu-Zn基铁氧体在低氧分压条件下烧结的情况下，空位V会出现在氧(负离子B)的位置处，并且诸如Zn、Ni、Cu等的正离子A可取代空位。因此，在低氧分压条件下离子的扩散驱动力增大，从而可在低的温度下确保高的烧结性。此外，参照图5和图6中的曲线，可确认的是，在在具有从大约1％至5％的范围内的氧分压的环境下烧结的Ni-Cu-Zn基铁氧体中，电感和磁导率增大。与本示例性实施例不同，当具有相同成分的Ni-Cu-Zn基铁氧体在较高的温度的环境(大约920℃)下被烧结时，晶粒的平均尺寸为0.5μm至1.5μm的水平，并且可能无法获得磁导率的期望水平。
另外，制造线圈电子组件的方法可包括以下步骤：形成包括多个绝缘层和设置在多个绝缘层上的线圈图案的主体；以及烧结主体，其中，多个绝缘层包括Ni-Cu-Zn基铁氧体，并且基于Ni-Cu-Zn基铁氧体的摩尔比，Ni-Cu-Zn基铁氧体具有从5％至15％的范围内的Ni含量、从5％至10％的范围内的Cu含量以及从28％至35％的范围内的Zn含量。
如上所述，当多层电感器使用具有通过如上所述的示例性实施例提出的成分范围和晶粒的平均尺寸的Ni-Cu-Zn基铁氧体实现时，由于可提高烧结性，因此与形成线圈图案的金属共烧可以是可行的，并且可获得高水平的磁导率。这样的多层电感器可有效地用作用于消除1MHz或更低的低频噪声的组件，并且可用于需要高的磁导率特性的各种应用。
如以上所阐述的，根据本公开的示例性实施例，当使用线圈电子组件时，可实现高水平的磁导率，并且可因此改善低频噪声特性等。
虽然以上已经示出和描述了示例性实施例，但是对于本领域技术人员将明显的是，在不脱离由所附权利要求限定的本发明的范围的情况下，可以进行修改和变型。

Claims (17)

1.一种线圈电子组件，包括：
主体，包括多个绝缘层和设置在所述多个绝缘层上的线圈图案；以及
外电极，形成在所述主体的外表面上并且连接到所述线圈图案，
其中，所述多个绝缘层包括Ni-Cu-Zn基铁氧体，并且
基于所述Ni-Cu-Zn基铁氧体的摩尔比，所述Ni-Cu-Zn基铁氧体具有从5％至15％的范围内的Ni含量、从5％至10％的范围内的Cu含量以及从28％至35％的范围内的Zn含量。
2.根据权利要求1所述的线圈电子组件，其中，所述Ni-Cu-Zn基铁氧体的晶粒的平均尺寸是10μm或更大。
3.根据权利要求2所述的线圈电子组件，其中，所述Ni-Cu-Zn基铁氧体的晶粒的所述平均尺寸在从10μm至20μm的范围内。
4.根据权利要求1所述的线圈电子组件，其中，所述Ni-Cu-Zn基铁氧体具有1500或更高的磁导率。
5.根据权利要求1所述的线圈电子组件，其中，所述Ni-Cu-Zn基铁氧体在具有从1％至5％的范围内的氧分压的环境下被烧结。
6.根据权利要求1所述的线圈电子组件，其中，基于所述Ni-Cu-Zn基铁氧体的所述摩尔比，所述Ni-Cu-Zn基铁氧体中铁的含量在从45％至55％的范围内。
7.根据权利要求1所述的线圈电子组件，其中，所述Ni-Cu-Zn基铁氧体不包含烧结制备组分。
8.根据权利要求1所述的线圈电子组件，其中，所述Ni-Cu-Zn基铁氧体不包含V、Bi或Si。
9.根据权利要求1所述的线圈电子组件，其中，所述线圈电子组件包括多个所述线圈图案，并且所述多个线圈图案被堆叠。
10.根据权利要求9所述的线圈电子组件，所述线圈电子组件还包括使所述多个线圈图案彼此电连接的多个导电过孔。
11.根据权利要求1所述的线圈电子组件，其中，所述线圈图案包括银。
12.一种制造线圈电子组件的方法，包括以下步骤：
形成包括多个绝缘层和设置在所述多个绝缘层上的线圈图案的主体；以及
烧结所述主体，
其中，所述多个绝缘层包括Ni-Cu-Zn基铁氧体，并且
基于所述Ni-Cu-Zn基铁氧体的摩尔比，所述Ni-Cu-Zn基铁氧体具有从5％至15％的范围内的Ni含量、从5％至10％的范围内的Cu含量以及从28％至35％的范围内的Zn含量。
13.根据权利要求12所述的方法，其中，烧结所述主体的步骤包括在具有从1％至5％的范围内的氧分压的环境下烧结所述主体。
14.根据权利要求12所述的方法，其中，所述主体不包含烧结制备组分。
15.根据权利要求12所述的方法，其中，烧结的所述主体的所述Ni-Cu-Zn基铁氧体的晶粒的平均尺寸为10μm或更大。
16.根据权利要求12所述的方法，其中，烧结的所述主体的所述Ni-Cu-Zn基铁氧体的晶粒的平均尺寸在从10μm至20μm的范围内。
17.根据权利要求12所述的方法，其中，基于所述Ni-Cu-Zn基铁氧体的所述摩尔比，所述Ni-Cu-Zn基铁氧体中铁的含量在从45％至55％的范围内。
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