CN109686830A - Flexible light emitting diode filament and combinations thereof - Google Patents
Flexible light emitting diode filament and combinations thereof Download PDFInfo
- Publication number
- CN109686830A CN109686830A CN201710969434.6A CN201710969434A CN109686830A CN 109686830 A CN109686830 A CN 109686830A CN 201710969434 A CN201710969434 A CN 201710969434A CN 109686830 A CN109686830 A CN 109686830A
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- Prior art keywords
- emitting diode
- light emitting
- led
- filament
- light
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- 230000009975 flexible effect Effects 0.000 title claims abstract description 91
- 238000000576 coating method Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 2
- 241001465382 Physalis alkekengi Species 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 abstract description 3
- 239000003292 glue Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- -1 polysiloxane Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229920006337 unsaturated polyester resin Polymers 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910003336 CuNi Inorganic materials 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- FCVHBUFELUXTLR-UHFFFAOYSA-N [Li].[AlH3] Chemical compound [Li].[AlH3] FCVHBUFELUXTLR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- LCDFWRDNEPDQBV-UHFFFAOYSA-N formaldehyde;phenol;urea Chemical compound O=C.NC(N)=O.OC1=CC=CC=C1 LCDFWRDNEPDQBV-UHFFFAOYSA-N 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- NCWQJOGVLLNWEO-UHFFFAOYSA-N methylsilicon Chemical compound [Si]C NCWQJOGVLLNWEO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of flexible light emitting diode filament comprising: a flexible base plate is that by substrate, peripheral coating ceramic insulating layer is constituted by metal layer, and the one or both ends of the flexible base plate have positive and negative electrode；Multiple light-emitting diode chip for backlight unit are set on the flexible base plate；And multiple conductive units, it is electrically connected one or more described light-emitting diode chip for backlight unit and the positive and negative electrode.The present invention also provides a kind of combination of flexible light emitting diode filament, is fitted closely and is formed by multiple flexible light emitting diode filaments.Flexible light emitting diode filament of the invention and combinations thereof has the advantage of bent, high cooling efficiency and complete cycle light, can be applied to more polynary lamps and lanterns and moulding, makes to generally acknowledge that the LED light lamp of environmental protection can be more popular at present.
Description
Technical field
The present invention relates to a kind of flexible light emitting diode (LED) filaments and combinations thereof, and especially one kind is with metal layer
By substrate, peripheral coating ceramic insulating layer is constituted, and has both rigidity, high-cooling property and flexible light emitting diode (LED) filament
And combinations thereof.
Background technique
Modern society is for dynamical pursuit Quick Extended to lighting area, and the tradition that power consumption is high and brightness is low is white
Vehement light bulb has been unable to satisfy modern life demand, and conventional bulb service life is shorter for the burden greatly of environment reality category one.With
Lighting engineering it is fast-developing, come into being using the headlamp of light emitting diode (LED).Light emitting diode (LED) lamp is not only
Power consumption is small, illumination is high and durable lasting, popular life is quickly popularized in, however, the irradiating angle of light emitting diode (LED) lamp
It is limited, can only generally irradiate 120 °, therefore, light emitting diode (LED) lamp only provides in the narrow angles of direct-view highlighted
Light source is spent, light weakens rapidly after deviateing the angle, and for space illumination, the utilization of light emitting diode (LED) lamp is quite
It is limited.
For play light emitting diode (LED) lamp advantage, and further solve light emitting diode (LED) lamp source irradiating angle
Problem develops light emitting diode (LED) filament lamp technology at present, is to concatenate more light-emitting diodes above an elongated substrate
(LED) chip is managed to be arranged lampshade as light-emitting filament, and in outside, it is possible to provide complete cycle radiant is closest to traditional tungsten wire
The light distribution of light bulb.Generally a light emitting diode (LED) filament can be divided into rigid filament and flexible filament according to substrate material difference, just
Property filament material is for example: sapphire, ceramics, glass and metal, flexible filament are with the laminating macromolecule material film of copper foil, example
Such as: bismaleimide-triazine (Bismaleimide-triazine, BT) resin, polyethylene (PE) resin or polyamides are sub-
Amine (PI) resin etc..
However, cost of material is high when rigid filament uses sapphire and ceramics as substrate material；Though and flexible filament
Advantage with soft flexible, but the component that resin is formed can cause heat dissipation effect to be deteriorated, and can not effectively dissipate high power group
The heat that part generates, and light emitting diode (LED) luminescence component is smaller, if the thermal energy locally generated can not effectively be emitted to outside,
It will lead to the rising of black box temperature, cause light emitting diode (LED) luminous efficiency to reduce, brightness reduces, in some instances it may even be possible to overheat
It damages, light emitting diode (LED) lamp is made to be unable to reach the service life length that should theoretically have.
In view of this, current Lighting Industry, which needs one kind, can have both the preferable radiating efficiency of rigid filament and flexible filament
Complete cycle light-emitting diode (LED) filament of flexibility characteristic, to promote general use of light emitting diode (LED) lamp in Lighting Industry
Property.
Summary of the invention
The main purpose of the present invention is to provide a kind of flexible light emitting diode (LED) filaments comprising: one is flexible
Substrate, the flexible base plate are that by substrate, peripheral coating ceramic insulating layer is constituted by metal layer, the flexible base plate
One or both ends have positive and negative electrode；Multiple light emitting diode (LED) chips, the light-emitting diode chip for backlight unit (LED) is to set
It is placed on the flexible base plate；And multiple conductive units, the conductive unit are arranged in the multiple light-emitting diodes tube core
Between piece (LED), it is electrically connected between the light-emitting diode chip for backlight unit (LED) and the positive and negative electrode.
In a preferred embodiment, a fluorescence coating is further included, the fluorescence coating is at least partly covered in described flexible
The light-emitting diode chip for backlight unit and the multiple conductive unit on property substrate.
In a preferred embodiment, the metal layer has multiple perforations, the inner circumferential side wall surface coating ceramic of the perforation
Insulating layer.
In a preferred embodiment, the ceramic insulating layer with a thickness of 10 μm to 400 μm.
In a preferred embodiment, the positive and negative electrode is to be formed in the flexible base plate using metallization to have setting
The both ends of the side of the multiple light emitting diode (LED) chip, and it is parallel with the multiple light emitting diode (LED) chip.
In a preferred embodiment, light emitting diode (LED) chip can be formal dress type light emitting diode (LED) chip
Or flip chip type light emitting diode (LED) chip.
In a preferred embodiment, described pliability light emitting diode (LED) filament is bent to form U-shaped structure, makes described
Flexible base plate is located at the inside of the U-shaped structure without the side that the multiple light emitting diode (LED) chip is arranged, it is described can
Flexible substrate have the side that the multiple light-emitting diode chip for backlight unit (LED) is set be located at the U-shaped structure outside and it is described just
Negative electrode is located at the endpoint of the U-shaped structure.
The present invention also provides a kind of flexible light emitting diode (LED) filament combination comprising multiple as described above
Flexible light emitting diode (LED) filament, wherein being with flexible base between the multiple pliability light emitting diode (LED) filament
The face of non-setting light emitting diode (LED) chip of plate fits closely.
Flexible light emitting diode (LED) filament of the invention and combinations thereof has flexible and high cooling efficiency and complete cycle
The advantage of light.Therefore, in Lighting Industry, present invention can apply to more polynary lamps and lanterns and moulding, make to generally acknowledge environmental protection at present
Light emitting diode (LED) lamp can be more popular.
Detailed description of the invention
Fig. 1 is light emitting diode (LED) filament diagrammatic cross-section of the first state sample implementation of the invention.
Fig. 2 is light emitting diode (LED) filament schematic top plan view of the first state sample implementation of the invention.
Fig. 3 is light emitting diode (LED) filament diagrammatic cross-section of the second state sample implementation of the invention.
Fig. 4 is light emitting diode (LED) filament schematic top plan view of the second state sample implementation of the invention.
Fig. 5 is light emitting diode (LED) filament diagrammatic cross-section of third state sample implementation of the present invention.
Fig. 6 is light emitting diode (LED) filament schematic top plan view of third state sample implementation of the present invention.
Fig. 7 is light emitting diode (LED) filament diagrammatic cross-section of the 4th state sample implementation of the invention.
Fig. 8 is light emitting diode (LED) filament combination diagrammatic cross-section of the 5th state sample implementation of the invention.
100 flexible light emitting diode (LED) filaments
10 flexible base plates
11 metal layers
12 ceramic insulating layers
13 electrodes
131 positive electrodes
132 negative electrodes
14 light emitting diodes (LED) chip
15 conductive units
16 fluorescence coatings
200 flexible light emitting diode (LED) filaments
20 flexible base plates
21 metal layers
22 ceramic insulating layers
23 electrodes
231 positive electrodes
232 negative electrodes
24 light emitting diodes (LED) chip
25 conductive units
26 fluorescence coatings
300 flexible light emitting diode (LED) filaments
30 flexible base plates
31 metal layers
32 ceramic insulating layers
33 electrodes
331 positive electrodes
332 negative electrodes
34 light emitting diodes (LED) chip
35 conductive units
36 fluorescence coatings
37 perforations
400 folding type pliability light emitting diode (LED) filaments
500 flexible light emitting diode (LED) filament combinations
58 metal clips
Specific embodiment
Detailed description for the present invention and technology contents, now just cooperation schema is described as follows.Furthermore the figure in the present invention
Formula, for convenience of explanation, ratio may not be drawn according to actual ratio, the model that the schemas such as this and its ratio are not intended to limit the invention
It encloses, chats in advance herein bright.
" containing or comprising " referred to herein means to be not excluded for one or more other assemblies, step, operation and/or element
Presence or be added to component, step, operation and/or the element." about or close " or " substantially " mean to have close
In the number value or range for allowing specification error, to avoid by any unreasonable third party, illegal or inequitable use is reason
The accurate or absolute figure that the solution present invention discloses." one " mean the object grammar object be one or more than one (that is, be at least
One).
It is to be illustrated for a wherein preferable state sample implementation of the invention below:
Fig. 1 and Fig. 2 is please referred to, is a state sample implementation of flexible light emitting diode (LED) filament of the invention respectively
Diagrammatic cross-section and schematic top plan view.The present invention is a kind of flexible light emitting diode (LED) filament 100 comprising: one is flexible
Property substrate 10, the flexible base plate 10 is that by substrate, peripheral coating ceramic insulating layer 12 is constituted by metal layer 11, described
The one or both ends of flexible base plate 10 have positive and negative electrode 131,132；Multiple light emitting diode (LED) chips 14, the hair
Optical diode (LED) chip 14 is set on the flexible base plate 10；And multiple conductive units 15, the conductive unit 15
Be arranged between the multiple light emitting diode (LED) chip 14, with the light emitting diode (LED) chip 14 and it is described just
It is electrically connected between negative electrode 131,132.
" pliability " as described herein refers to that an object is able to achieve the characteristic of deflection or bending, that is, has soft speciality.In
In one state sample implementation, flexible light emitting diode (LED) filament of the invention is a linear structure.In another state sample implementation,
Flexible light emitting diode (LED) filament of the invention is a warp architecture with curvature.Again in another state sample implementation, this
Flexible light emitting diode (LED) filament of invention is one 180 ° of curved collapsed configurations.In another state sample implementation, this hair
Bright flexible light emitting diode (LED) filament is a spiral-shaped structure.However, the aforementioned sheet for bending pattern or not bending pattern
The aspect that flexible light emitting diode (LED) filament is merely illustrative of implementation is invented, what is be not intended to limit the invention is flexible
The flexure form of property light emitting diode (LED) filament.
" fluorescence coating 16 " as described herein refers to that a transparent glue material is wherein dispersed with fluorescent powder.The major function of fluorescence coating
As: (1) light that can make light emitting diode (LED) chip issued by fluorescence coating after change light color；(2) by shining
Diode (LED) chip light emitting or external light source excite fluorescent powder, and integral fluorescence layer is made to generate luminescence generated by light effect, that is, make
For the indirect light source of flexible light emitting diode (LED) filament；(3) light emitting diode (LED) chip and conductive unit, drop are protected
Suboxides efficiency promotes flexible light emitting diode (LED) filament service life.The specific example of the transparent glue material is such as: phenol
Urea formaldehyde, epoxy resin, silica gel, polyurethane resin, unsaturated polyester resin, acrylic resin, polyolefin/mercaptan, ethylene
Base ether resin etc., preferably epoxy resin, silica gel, methyl silicon resin, phenyl polysiloxane, methyl phenyl silicone resin or modified silicon tree
Rouge not limits in the present invention.Fluorescence coating, which can be covered only, has light emitting diode in flexible light emitting diode (LED) filament
(LED) face (i.e. die bond face) of chip, i.e. single-side coating；Fluorescence coating can also cover the side in die bond face and die bond face, only reveal
Non- die bond face and electrode out, i.e. three faces cover glue；Fluorescence coating can also be covered completely in flexible light emitting diode (LED) filament, only
Expose electrode, i.e., covers glue on four sides.In a preferable state sample implementation, the fluorescence coating 16 is at least partly covered in the flexible base
The light emitting diode (LED) chip 14 and the multiple conductive unit 15 on plate 10.
" metal layer 11 " as described herein can be aluminium, copper, silver, gold, titanium, platinum, zinc, the combination of nickel and aforementioned metal and aforementioned
Group composed by the alloy of metal, however, the present invention is not limited thereto.In a preferable state sample implementation, the metal layer 11 be aluminium,
Aluminium alloy, copper or copper alloy, such as the copper alloy include ormolu, copper-tin alloy, albronze, cupro silicon or cupro-nickel
Alloy etc., but not limited to this etc.；The aluminium alloy includes alusil alloy, aldray, aluminium copper, almag, aluminium manganese
Alloy, alumin(i)um zinc alloy or aluminium lithium alloy, but not limited to this etc..
" electrode 13 " as described herein is generally divided into positive and negative electrode 131,132, and the electrode 13 is to be located at the pliability
The one or both ends of substrate 10 are electrically connected using between the conductive unit 15 and the light emitting diode (LED) chip 14.Institute
Stating electrode 13 can be general electrode material, such as: aluminum bronze (AlCu), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride
(WN), the alloy of golden (Au), silver-colored (Ag), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), platinum (Pt), palladium (Pd) or aforementioned metal
However, the present invention is not limited thereto etc..In a preferable state sample implementation, the electrode 13 be formed in using metallization it is described flexible
Property 10 both ends of substrate be parallel to the face of the light emitting diode (LED) chip 14, the metallization include plating, chemical plating,
Immerse general methods metal being formed on ceramics such as plating.Known light emitting diode (LED) filament is will just using adhesive agent
Negative electrode is fixed on the both ends of light emitting diode (LED) substrate material, and the adhesive agent is mostly resinae adhesive agent (such as epoxy
Resin etc.), poor thermal conductivity after solidification, when causing light emitting diode (LED) filament conductive luminous, substrate material can not effectively dissipate
Heat, even if light emitting diode (LED) filament uses high thermal conductivity material, heat dissipation is hindered by the adhesive agent of poor heat conductivity, can not be effective
Loss thermal energy causes the radiating efficiency of Integral luminous diode (LED) filament to reduce；In comparison, the present invention uses metal-plated
Method forms the mode of positive and negative electrode, is that the metal material (i.e. electrode) for keeping thermal conductivity good and the good ceramic material of thermal conductivity are (i.e. ceramic
Insulating layer) directly link, exempt the adhesive agent using other poor thermal conductivities, Integral luminous diode (LED) lamp can be substantially improved
The radiating efficiency of silk.
" ceramic insulating layer 12 " as described herein can be general ceramic material, and it includes various metal oxides, carbonization
Object, nitride, boride, silicide or its etc. combination, example such as silicon carbide (SiC), silicon nitride (Si3N4), aluminium nitride
(AIN), aluminium oxide (Al2O3), titanium carbide (TiC), titanium boride (TiB2) or boron carbide (B4C) etc., and these are not limited to, and with
Aluminium oxide (Al2O3), silicon nitride (Si3N4), aluminium nitride (AIN) are preferable, therefore three has good thermal conductivity and heat is swollen
Swollen coefficient is small.The forming method of the ceramic insulating layer 12 can be general ceramics and metal composite method, include coating, anode
Oxidation, differential arc oxidation, plasma-based electrolytic oxidation, magnetron sputtering or sol-gel method, and it is not limited to these.In a state sample implementation
In, the ceramic insulating layer 12 with a thickness of 10~400 μm, preferably 20~200 μm, more preferably 30~50 μm, for example, 10 μm,
20μm、30μm、40μm、50μm、60μm、70μm、80μm、90μm、100μm、110μm、120μm、130μm、140μm、150μm、
160 μm, 170 μm, 180 μm, 190 μm, 200 μm, 225 μm, 250 μm, 275 μm, 300 μm, 325 μm, 350 μm, 375 μm or 400 μ
M is less susceptible to fragmentation between the ceramic insulating layer of this thickness and has pliability, can bear the strength of substrate punching press when processing.This
Outside, ceramic insulating layer can pass through mirror surface treatment, have reflectivity.
It is as described herein that " light emitting diode (Light Emitting Diode, LED) chip 14 " can be any type
Light emitting diode (LED) chip, be electrically connected using between the conductive unit 15 and the electrode 13.Preferably implement state in one
In sample, light emitting diode (LED) chip 14 be formal dress type light emitting diode (LED) chip (or " horizontal chip ") or
Flip chip type light emitting diode (LED) chip (or " flip (Flip chip ").
" conductive unit 15 " as described herein refers to any material or group that electric current can be allowed to pass through, have circuit conducting function
Part is electrically connected one or more described light emitting diode (LED) chips 14 and the positive and negative electrode 131,132.It is described to lead
The form that electric unit 15 is arranged, which includes that plating, chemical plating, immersion plating etc. are general, is formed in the method on ceramics for conductive metal, or
Using the common conductives metallic circuit linking method such as routing, do not limited in the present invention, it is described to lead in a state sample implementation
Electric unit 15 is to be set to 12 surface of ceramic insulating layer；It is described to lead in another state sample implementation (as shown in Figures 3 and 4)
Electric unit 25 is set on the ceramic insulating layer 22.The material of the conductive unit 15 can be copper (Cu), titanium (Ti), titanium tungsten
Alloy (TiW), corronil (CuNi), palladium (Pd), golden (Au), silver-colored (Ag), gold-tin alloy (AuSn), tin (Sn), aluminium (Al) etc.,
It is not limited in the present invention.
It is to be illustrated for another preferable state sample implementation of the invention below:
Also referring to Fig. 8 which shows an implementation of present invention pliability light emitting diode (LED) filament combination 500
The schematic diagram of aspect.
It is to provide a kind of flexible light emitting diode (LED) filament combination in this preferable state sample implementation comprising Duo Geru
Upper described flexible light emitting diode (LED) filament, wherein being between the multiple pliability light emitting diode (LED) filament
It is fitted closely with the face of non-setting light emitting diode (LED) chip 14 of flexible base plate 10.
" fitting closely " as described herein can be " bonding " or " non-bonding " mode.The bonding mode can be used general
General heat-curable glue or optic-solidified adhesive, such as: phenolic resin, epoxy resin, polyurethane resin, unsaturated polyester resin, third
Olefin(e) acid resinoid, polyolefin/mercaptan or vinyl ether resin etc., however, the present invention is not limited thereto etc.；Or use electrically conductive property
Colloid, such as: elargol, scolding tin glue or cast welding glue etc., however, the present invention is not limited thereto etc..The non-bonding mode, such as: metal
Folder, however, the present invention is not limited thereto etc..In a preferable state sample implementation, flexible light emitting diode (LED) filament combination 500 be with
Metal clip 58 fixes one end of two LED filaments, with up to fitting closely, the method can have preferable radiating efficiency, but this
Invention fits closely mode not limitation for described.
Hereinafter, it will further be described in detail and the embodiment description present invention.It should be understood, however, that these embodiments are only used
In help can the present invention easier to understand, range and is not intended to limit the present invention.
I. the first state sample implementation-flip chip type pliability light emitting diode (LED) filament
It referring to FIG. 1 and FIG. 2, is respectively the diagrammatic cross-section and schematic top plan view of the first state sample implementation of the invention.
Firstly, using the aluminium of a thin strip as metal layer 11, and 30 μm of oxygen is coated outside the metal layer 11
Change aluminium ceramics, make to coat a ceramic insulating layer 12 outside the metal layer 11 and be allowed to insulate, has been coated with ceramic insulating layer for aforementioned
One end of 12 metal layer 11 plates a positive electrode 131 using plating, and the other end plates a negative electrode 132, and further in institute
It states 12 surface of ceramic insulating layer and one metallic circuit layer is formed using as conductive unit 15 with plating mode, and the conductive unit 15
It is electrically connected with the positive electrode 131 and negative electrode 132, completes a flexible base plate 10.
It connects, configures multiple flip chip type light emitting diode (LED) chips 14, die bond mode on Yu Suoshu flexible base plate 10
Epoxy resin can be used, each light emitting diode (LED) chip 14 is all electrically connected with the conductive unit 15, i.e., described
Between multiple light emitting diode (LED) chips 14 and above-mentioned positive and negative electrode 131,132 is electrically connected with the conductive unit 15
It connects, and forms a serial circuit.
Finally, coating a fluorescence coating 16 in a manner of glue to cover on four sides outside the flexible base plate 10, make the fluorescence coating
16 completely cover the multiple light emitting diode (LED) chip and the conductive unit 15, only expose the positive and negative electrode 131,
132.Light can be made to switch to white light by blue light when the multiple LED chip transmitting light source passes through the fluorescence coating 16, and described glimmering
The fluorescent powder dispersed in photosphere 16 can be excited it is luminous, with complete a complete cycle radiant flip chip type pliability light emitting diode
(LED) filament 100.
II. the second state sample implementation-formal dress type pliability light emitting diode (LED) filament
It is respectively the diagrammatic cross-section and schematic top plan view of the second state sample implementation of the invention referring to Fig. 3 and Fig. 4.
Firstly, using the aluminium of a thin strip as metal layer 21, and 30 μm of oxygen is coated outside the metal layer 21
Change aluminium ceramics, make to coat a ceramic insulating layer 22 outside the metal layer 21 and be allowed to insulate, has been coated with ceramic insulating layer for aforementioned
One end of 22 metal layer 21 plates a positive electrode 231 using plating, and the other end plates a negative electrode 232, and it is flexible to complete one
Substrate 20.
It connects, configures multiple formal dress type light emitting diode (LED) chips 24, die bond mode on Yu Suoshu flexible base plate 20
It can be used elargol to promote heat-conducting effect, plain conductor be equipped between each light emitting diode (LED) chip 24 using as leading
Electric unit 25, the conductive unit 25 are electrically connected with positive electrode 231 above-mentioned or negative electrode 232, i.e., and the multiple luminous two
Between pole pipe (LED) chip 24 and positive and negative electrode above-mentioned 231,232 is with the conductive unit 25 electric connection, and forms one
Serial circuit.
Finally, coating a fluorescence coating 26 in a manner of glue to cover on four sides outside the flexible base plate 20, make the fluorescence coating
26 completely cover the multiple light emitting diode (LED) chip and the conductive unit 25, only expose the positive and negative electrode 231,
232.When light can be made to be switched to by blue light by the fluorescence coating 26 white for the multiple light emitting diode (LED) chip emission light source
Light, and the fluorescent powder dispersed in the fluorescence coating 26 can be excited it is luminous, with complete a complete cycle light formal dress type pliability shine two
Pole pipe (LED) filament 200.
III. third state sample implementation-perforation type pliability light emitting diode (LED) filament
It is respectively the diagrammatic cross-section and schematic top plan view of third state sample implementation of the present invention referring to Fig. 5 and Fig. 6.
Firstly, using the aluminium of a thin strip as metal layer 31, and punched on the metal layer 31, makes the metal
There are multiple perforations 37 on layer 31,30 μm of aluminium oxide ceramics is then coated outside the metal layer 31, the perforation 37
The wall surface of inner circumferential side is also coated with aluminium oxide ceramics, makes to coat a ceramic insulating layer 32 outside the whole metal layer 31 and is allowed to exhausted
Edge.One end of the aforementioned metal layer 31 for having been coated with ceramic insulating layer 32 is plated into a positive electrode 331 using plating, the other end plates
One negative electrode 332 completes a flexible base plate 30.
It connects, 37 two sides of perforation of Yu Suoshu flexible base plate 30 configure formal dress type light emitting diode (LED) chip 34, respectively
Plain conductor is equipped between a light emitting diode (LED) chip 34 so that as conductive unit 35, the conductive unit 35 is with before
The positive electrode 331 or negative electrode 332 stated are electrically connected, i.e., between each light emitting diode (LED) chip 34 and above-mentioned
Positive and negative electrode 331,332 forms a serial circuit with the conductive unit 35 electric connection.
Finally, coating a fluorescence coating 36 in a manner of glue to cover on four sides outside the flexible base plate 30, make the fluorescence coating
36 completely cover the light emitting diode (LED) chip and the conductive unit 35, only expose the positive and negative electrode 331,332.
When the light emitting diode (LED) chip emission light source can make light switch to white light, and institute by blue light by the fluorescence coating 36
State the fluorescent powder dispersed in fluorescence coating 36 can be excited it is luminous, with complete a complete cycle radiant perforation type pliability light-emitting diodes
Manage (LED) filament 300.
The advantage of perforation type pliability light emitting diode (LED) filament 300 is that light can pass through the perforation 37,
Keep the brightness in non-die bond face higher.
IV. four state sample implementations-folding type pliability light emitting diode (LED) filament
Referring to Fig. 7 which shows the diagrammatic cross-section of the 4th state sample implementation of the invention.
Using the first state sample implementation of a uncoated fluorescence coating, a fluorescence coating 16 is coated in its die bond face, makes the fluorescence
Layer 16 completely covers the multiple LED chip and the conductive unit 15, only exposes the positive and negative electrode 131,132, obtains one
Flexible light emitting diode (LED) filament of single-side coating.
Then, flexible light emitting diode (LED) filament of aforementioned single-side coating is subjected to 180 ° of foldings and is bent into U-shaped knot
Structure makes the flexible base plate be located at the interior of the U-shaped structure without the side that the multiple light emitting diode (LED) chip is arranged
Side, the flexible base plate have the side that the multiple light emitting diode (LED) chip is arranged to be located at the outer of the U-shaped structure
The inside of side, the U-shaped structure can fit closely, and complete the folding type pliability light emitting diode (LED) of a complete cycle radiant
Filament 400.
The advantage of folding type pliability light emitting diode (LED) filament 400 is the light emitting diode (LED) core
Piece be around being set to the outside of filament, can 360 ° of offer LED light sources, and glue is not covered in non-die bond face, and radiating efficiency is preferable.
V. the 5th state sample implementation-pliability light emitting diode (LED) filament combination
Referring to Fig. 8, for the diagrammatic cross-section of the 5th state sample implementation of the invention.
Using the first state sample implementation of two uncoated fluorescence coatings, distinctly coated in the side in its die bond face and die bond face glimmering
Photosphere 16 only exposes non-die bond face and positive and negative electrode 131,132, obtains the flexible light emitting diode that glue is covered in two three faces
(LED) filament.
Then, flexible light emitting diode (LED) filament die bond that glue is covered in aforementioned three face is faced outwardly, uses a metal clip
One end of 58 anchored filaments, the non-die bond face of flexible light emitting diode (LED) filament for making two three faces cover glue are closely pasted
It closes, completes flexible light emitting diode (LED) filament combination 500 of a complete cycle radiant.
The advantage of described pliability light emitting diode (LED) filament combination 500 is that the LED chip is to be set to filament
Outside, can 360 ° of offer LED light sources, and glue is not covered in non-die bond face, only using metal clip 58 as fixing component, radiating efficiency compared with
It is good.
In conclusion the present invention provides a kind of flexible light emitting diode (LED) filament and combinations thereof, have both rigidity and
Flexibility can cooperate different usage modes or lamps and lanterns to configure and be bent.The main material of flexible base plate is metal in the present invention
And ceramics, cost is relatively low and all has high cooling efficiency for the two, can solve known light emitting diode (LED) lamp heat dissipation problem and drop
Low cost of manufacture.The present invention provides the filament of a variety of complete cycle radiants, can be applied to light emitting diode (LED) light bulb, is illuminating
It in industry, can be applied to more polynary lamps and lanterns and moulding, make to generally acknowledge that light emitting diode (LED) lamp of environmental protection can be more general at present
And.
The above has been described in detail, only described above, is only a preferred embodiment of the invention,
When that cannot be limited the scope of implementation of the present invention with this, i.e. equivalent changes and modifications made according to the patent scope of the present invention,
It should still belong in patent covering scope of the invention.
Claims (8)
1. a kind of pliability light emitting diode filament characterized by comprising
One flexible base plate, the flexible base plate are that by substrate, peripheral coating ceramic insulating layer is constituted by metal layer, institute
The one or both ends for stating flexible base plate have positive and negative electrode；
Multiple light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit are set on the flexible base plate；And
Multiple conductive units, the conductive unit are arranged between the multiple light-emitting diode chip for backlight unit, with described luminous two
It is electrically connected between pole pipe chip and the positive and negative electrode.
2. pliability light emitting diode filament as described in claim 1, which is characterized in that it also include a fluorescence coating, it is described glimmering
Photosphere is at least partly covered in the light-emitting diode chip for backlight unit and the multiple conductive unit on the flexible base plate.
3. pliability light emitting diode filament as claimed in claim 2, which is characterized in that the metal layer has multiple pass through
Hole, the inner circumferential side wall surface coating ceramic insulating layer of the perforation.
4. pliability light emitting diode filament as claimed in claim 3, which is characterized in that the ceramic insulating layer with a thickness of
10 μm to 400 μm.
5. pliability light emitting diode filament as claimed in claim 4, which is characterized in that the positive and negative electrode is using metal
Plating method is formed in the both ends that the flexible base plate has the side that the multiple light-emitting diode chip for backlight unit is arranged, and with it is the multiple
Light-emitting diode chip for backlight unit is parallel.
6. such as the described in any item flexible light emitting diode filaments of Claims 1-4, which is characterized in that the light-emitting diodes
Tube chip is formal dress type light-emitting diode chip for backlight unit or flip chip type light-emitting diode chip for backlight unit.
7. such as the described in any item flexible light emitting diode filaments of Claims 1-4, which is characterized in that the flexible hair
Optical diode filament is bent to form U-shaped structure, makes the flexible base plate without the side that the multiple light-emitting diode chip for backlight unit is arranged
Face is located at the inside of the U-shaped structure, and the flexible base plate has the side that the multiple light-emitting diode chip for backlight unit is arranged to be located at
The outside of the U-shaped structure and the positive and negative electrode are located at the endpoint of the U-shaped structure.
8. a kind of combination of pliability light emitting diode filament, which is characterized in that including multiple such as any one of claim 1 to 7
The flexible light emitting diode filament between the multiple pliability light emitting diode filament is set so that flexible base plate is non-
The face for setting light-emitting diode chip for backlight unit fits closely.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710969434.6A CN109686830A (en) | 2017-10-18 | 2017-10-18 | Flexible light emitting diode filament and combinations thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710969434.6A CN109686830A (en) | 2017-10-18 | 2017-10-18 | Flexible light emitting diode filament and combinations thereof |
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| CN109686830A true CN109686830A (en) | 2019-04-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112212225A (en) * | 2019-07-10 | 2021-01-12 | 合信材料有限公司 | LED light-emitting structure, LED light-emitting component material belt, LED light-emitting component and LED bulb |
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