CN109655674B - Weak electrostatic field measuring device and method based on weak coupling micromechanical resonator - Google Patents
Weak electrostatic field measuring device and method based on weak coupling micromechanical resonator Download PDFInfo
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- CN109655674B CN109655674B CN201910144728.4A CN201910144728A CN109655674B CN 109655674 B CN109655674 B CN 109655674B CN 201910144728 A CN201910144728 A CN 201910144728A CN 109655674 B CN109655674 B CN 109655674B
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Abstract
The invention relates to a weak electrostatic field measuring device and method based on a weak coupling micromechanical resonator, and belongs to the field of micro-sensor technology (MEMS). The electric field intensity measuring chip comprises a plurality of resonators connected in series through a mechanical coupling beam, a voltage input electrode, a detection electrode and a driving electrode, wherein the resonators are weakly coupled through a bridge-shaped beam, the axial stress generated in the machining process can be released through the design of the bridge-shaped coupling beam, and the device is not influenced by residual stress. Output signals of the two resonators are detected by the two groups of detection electrodes and are led out for difference, so that the strength of the signals is enhanced, feed-through capacitance signal interference caused by potential difference between the driving electrodes and the detection electrodes is eliminated, and the stability and accuracy of the measurement signals are greatly improved. The large-scale comb array capacity is designed on the two sides of the resonator, and the comb array capacity can be used for sensing an electric field to be measured, so that the measurement sensitivity of the electric field strength to be measured is improved, and ultra-high precision electrostatic field measurement and the restraining force of environmental noise are guaranteed.
Description
Belongs to the field of:
the invention relates to a high-precision electrostatic field measuring method and device, and belongs to the field of electronic measuring instruments.
Background
An electric field meter is an electronic instrument that is capable of measuring the strength of an electric field. The detection and monitoring of the electric field intensity has important significance in the fields of scientific research and engineering technology, and particularly has wide and important application requirements in the fields of aerospace, power systems and the like.
Early researches on electric field measurement methods mainly focused on the electrical principle, the electric field sensor based on the charge induction principle is most commonly researched, and a measurement instrument called a field mill type electric field meter is the most typical electric field meter. The field grinding type electric field instrument mainly comprises two parts, namely a sensitive electrode arranged at the bottom and a flying shuttle structure arranged above the sensitive electrode, wherein the sensitive electrode is continuously and periodically shielded and exposed in a measuring electric field through a swinging flying shuttle during working, so that an alternating signal is formed at an electrode end, and the signal is processed to finally finish the measurement of the electric field. However, such an electrometer is bulky, generally with a resolution of about 50V/m, and requires a grounding member for its operation, and is therefore susceptible to distortion. The field-grinding type electric field meter is mostly used for measuring transient electric fields such as atmospheric electric fields and the like, and cannot meet the electrostatic field measurement work with small range and high precision.
The rapid development of optical sensing and measurement technology provides a new means for electric field measurement. One common method is to use a probe to induce and measure the charge signal in the electric field, convert the charge signal into an optical signal through a circuit and then receive and process the optical signal to realize insulation measurement; the other type is based on the crystal Pockels effect, which means that the electro-optic phase delay variation of the applied electric field intensity is measured according to the crystal. The latter is gradually becoming the mainstream method of optical measurement due to its advantage of higher precision. Although the resolution of such an electric field meter is higher than that of the above-described electric type, it is susceptible to environmental noise such as temperature, and thus it does not have a property of stable operation.
Micro electric field sensors based on Micro Electro Mechanical Systems (MEMS) technology are becoming a research hotspot of micro mechanical chips in recent years due to their advantages of small size, low power consumption, and the like. The modal localization mechanism reflects the change of the sensitive quantity through the amplitude ratio, but not the amplitude, so that the influence of environmental noise on measurement is effectively inhibited, and the device has extremely high measurement precision. Based on the inspired theory, the invention provides the series-type electric field meter with the plurality of weak coupling resonators based on the modal localization effect, a large-scale comb capacitor array is designed to be used for sensing an electric field to be measured and improving the measurement precision of the electric field, and the resonators based on the modal localization principle also have the required working stability. Compared with the two types of electric field meters, the invention can realize high-precision measurement of a small-range electrostatic field and has strong environment common-mode noise suppression capability.
The invention content is as follows:
the purpose of the invention is: based on the modal localization effect of the multi-degree-of-freedom weakly coupled resonator, the device and the method for measuring the intensity of the electrostatic field with high precision are provided, and the device and the method can realize the measurement of the 0.1V/m level weak electrostatic field.
The invention provides a weak electrostatic field measuring device based on a weak coupling micromechanical resonator, which comprises an electric field measuring chip and a signal processing circuit; the electric field measurement chip comprises at least two identical resonators, specifically comprises a first resonator 301, a resonator array 302 and a second resonator 303, wherein the number of the resonators in the resonator array 302 can be zero, namely the resonator array 302 can be empty; the first resonator 301, the resonator array 302 and the second resonator 303 are sequentially arranged in the horizontal direction, namely the resonance direction, in the vertical direction, two sides of each resonator are connected with a mechanical coupling beam 304 in the horizontal direction through a group of resonance beams, and each group of resonance beams is at least one vertical-direction straight beam which is parallel to each other; the two ends of the mechanical coupling beam 304 are respectively fixed on the fixed anchor points 305 through a short beam in the vertical direction, and the shape of the mechanical coupling beam 304 is similar to a bridge shape, so the mechanical coupling beam 304 and the short beams in the vertical direction at the two ends are collectively called as a bridge type coupling beam; the weak coupling between the resonators is realized in such a way that the rigidity of the bridge type coupling beam is far less than that of the resonance beam, so that the weak coupling between the resonators is realized; a comb tooth array 202 composed of a movable comb tooth array 312 and a fixed comb tooth array 313 is arranged on the left side of the first resonator 301 and used for sensitively applying the strength of an electric field and disturbing the weakly coupled resonator; an upper driving electrode 308 and a lower driving electrode 309 are arranged above and below the right side of the second resonator 303, and the resonators are driven to start oscillation together; a regulating electrode 314 is arranged at the right side of the second resonator 303 and used for regulating the vibration state of the resonator; all resonators are connected with the direct current drive electrode 315 at the bottom, and direct current voltage is provided by the direct current drive 315; the whole system uses the first resonator 301 and the second resonator 303 as signal output terminals, so that the first detection electrode 306 and the second detection electrode 307 are respectively arranged on the upper and lower sides of the right side of the first resonator 301 to form a differential detection electrode of the first resonator 301, and the third detection electrode 310 and the fourth detection electrode 311 are respectively arranged on the upper and lower sides of the left side of the second resonator 303 to form a differential detection electrode of the second resonator 303. The signals output from the first detection electrode 306, the second detection electrode 307, the third detection electrode 310, and the fourth detection electrode 311 are processed by the signal processing circuit 205 to obtain the final output signal of the electric field strength measurement chip.
Alternatively, each resonator may be connected to the horizontally oriented mechanical coupling beam 304 on one side by a set of resonator beams and directly fixed to the anchor point 305 on the other side.
Alternatively, the modified coupling beam 304 may be a plurality of horizontal straight beams separated from each other, wherein each straight beam connects two adjacent resonators to each other.
The working process is as follows: direct current is applied to the first resonator 301 and the second resonator 303 through the direct current drive 315, alternating voltage is applied to the resonators through the upper drive electrode 308 and the lower drive electrode 309 to perform alternating current drive, the weakly coupled resonators perform in-phase vibration or opposite-phase vibration at a first-order mode resonance frequency or a second-order mode resonance frequency, and the amplitude ratio of the first resonator 301 to the second resonator 303 is 1 or-1. When the electric field to be measured covers the movable comb array 312 and the fixed comb array 313, the electrostatic negative stiffness between the movable comb array 312 and the first resonator 301 is changed, and the electrostatic negative stiffness affects the stiffness of the first resonator 301, so that the amplitude ratio of the first resonator 301 and the second resonator 303 is changed, and the size of the electric field to be measured can be obtained by detecting the change of the amplitude ratio.
The invention provides a high-precision electric field intensity measuring method, which comprises the following steps:
the method comprises the following steps: applying a known electric field E to the movable comb array 312 and the fixed comb array 3131Obtaining a set of resonator amplitude ratios ui。
Step two: obtaining amplitude ratio u by linear fitting methodiFor known electric field E1The fitted curve of (1).
Step three: an unknown electric field E to be measured0Applied to the movable comb array 312 and the fixed comb array 313 to obtain an amplitude ratio u0。
Step four: the amplitude ratio u is compared0Substituted amplitude ratio uiFor known electric field E1Obtaining a corresponding electric field strength value, which is the unknown electric field E to be measured0。
The invention has the beneficial effects that: a high-precision electrostatic field meter based on modal localization effect is provided, the electric field intensity measuring chip comprises a plurality of resonators connected in series through a mechanical coupling beam, a voltage input electrode, a detection electrode and a driving electrode.
According to the invention, the plurality of resonators are weakly coupled through the bridge-shaped beam, and the design of the bridge-shaped coupling beam can release axial stress generated in the processing process, so that the device is not influenced by residual stress.
The output signals of the first resonator and the second resonator are detected by the two groups of detection electrodes and are led out and differentiated, the detection method can enhance the strength of the signals, more importantly, feed-through capacitance signal interference caused by potential difference between the driving electrode and the detection electrodes can be eliminated, and the stability and accuracy of the measurement signals can be greatly improved.
The large-scale broach array capacity has been designed to the syntonizer both sides, all can be used to the sensitive electric field that awaits measuring, through make full use of broach capacitor array just to the area, has increased the electric charge volume that the broach was saved, has promoted the measurement sensitivity to the electric field intensity that awaits measuring. When an electric field to be measured is applied to the upper part of the device, the movable comb array moves under the action of electrostatic force, and the electrostatic negative rigidity between the movable comb array and the resonator is changed, so that the energy distribution of a weakly coupled resonator system is influenced, the mode of the resonator is changed violently, the sensitivity of the electric field intensity measuring chip can be amplified by taking the amplitude ratio of the output resonator as an output dimension, and ultra-high-precision electrostatic field measurement and the suppression force of environmental noise are guaranteed.
The measuring device provided by the invention comprises two or more weakly coupled resonators which are connected together through a mechanical beam or static electricity, a plurality of groups of driving electrodes and detecting electrodes, and a large-scale fixed and movable comb tooth structure which is arranged on two sides of the resonators and is in electrostatic coupling. The bias voltage of the device is set, so that induced charges are generated on the movable comb tooth array, when the device is placed in an electrostatic field, the induced charges drive the movable comb tooth to move under the action of electrostatic force, the electrostatic negative stiffness between the comb tooth array and the resonator is changed, and the energy distribution of the resonator system is severely unbalanced, so that the amplitude ratio of the two resonators used as output is changed rapidly, and the high-resolution measurement of the electric field intensity can be realized by measuring the output amplitude ratio of the resonators. The design of the test circuit adopts a closed loop test scheme: the signal on the detection electrode is loaded on the alternating current driving electrode to form a closed loop after sequentially passing through a trans-impedance amplifier, a subtracter, a band-pass filter and a comparator; and respectively carrying out rectification filtering and division on the outputs of the two paths of subtracters to obtain a direct-current voltage signal reflecting the amplitude ratio of the No. 1 and No. 3 resonators. The closed-loop driving detection circuit can reduce the noise influence of the resonator and greatly improve the resolution.
Description of the drawings:
fig. 1 is an equivalent schematic diagram of a weakly coupled resonator array based on modal localization effects.
FIG. 2 is a schematic diagram of the operation of the high-precision electrostatic field meter of the modal localization effect of the present invention.
FIG. 3 is a schematic diagram of a high-precision electric field meter based on modal localization effects.
FIG. 4 is a schematic diagram of a detection method (three degrees of freedom is taken as an example) for implementing the present invention.
FIG. 5 is a graph of the amplitude versus electric field strength fit obtained by an embodiment of the present invention.
In the figure:
101-an equivalent mass model of a resonator, 102-an equivalent mass model of a resonator array, 103-an equivalent mass model of a resonator, 104-an equivalent stiffness model of a resonator, 105-a coupling beam model connecting the equivalent mass model of the resonator array and the equivalent mass model of the resonator array, 106-a coupling beam model connecting the equivalent mass model of the resonator array and the equivalent mass model of the resonator, and 107-an equivalent stiffness model of the resonator II.
201-chip of high-precision electrostatic field meter of the invention, 202-comb array, 203-multiple freedom degree weak coupling resonator (three degrees of freedom in the figure), 204-output signal of resonator, 205-signal processing circuit.
301-resonator I, 302-resonator array, 303-resonator II, 304-mechanical coupling beam, 305-fixed anchor point, 306-first detection electrode, 307-second detection electrode, 308-upper driving electrode, 309-lower driving electrode, 310-third detection electrode, 311-fourth detection electrode, 312-movable comb array, 313-fixed comb array, 314-adjusting electrode, and 315-direct current driving.
401-first detection electrode output, 402-second detection electrode output, 403-third detection electrode output, 404-fourth detection electrode output, 405-first signal trans-impedance amplifier, 406-second signal trans-impedance amplifier, 407-third signal trans-impedance amplifier, 408-fourth signal trans-impedance amplifier, 409-resonator one signal differential amplifier, 410-resonator two signal differential amplifier, 411-divider.
The specific implementation mode is as follows:
the electric field measurement chip in this embodiment is implemented in a three-degree-of-freedom resonator structure and detected by a detection circuit, and the detailed structure is as follows: the electric field measurement chip comprises three resonators, wherein a first resonator 301 is arranged on the left side, a resonator array 302 only containing a single resonator is arranged in the middle, and a second resonator 303 is arranged on the right side; in this embodiment, each resonator is connected to the mechanical coupling beam 304 in the horizontal direction through the two side resonator beams, so that weak coupling between the resonators can be realized; a positive direct-current voltage signal of 5V is provided for the resonator through the direct-current drive 315, an alternating-current frequency-sweeping signal of 10mV is provided for the resonator II through the upper drive electrode 308 and the lower drive electrode 309, and the resonator is driven to vibrate at the resonant frequency in an electrostatic force mode; applying an electric field to be measured on the movable comb teeth 312 and the fixed comb teeth 313; the first detection electrode output 401 and the second detection electrode output 402 are amplified and denoised by a first signal transimpedance amplifier 405 and a second signal transimpedance amplifier 406, and are sent to a first signal differential amplifier 409 of a resonator to obtain a differential signal; the third detection electrode output 403 and the fourth detection electrode output 404 are amplified and denoised by a third signal transimpedance amplifier 407 and a fourth signal transimpedance amplifier 408, and are sent to a second signal differential amplifier 410 of the resonator to obtain a differential signal; the divider 411 is used for dividing the two paths of differential signals to obtain an amplitude ratio output.
The working process is as follows: a positive direct-current voltage signal of 5V is provided for the resonator through the direct-current drive 315, an alternating-current frequency-sweeping signal of 10mV is provided for the resonator II through the upper drive electrode 308 and the lower drive electrode 309, the weakly coupled resonator does in-phase vibration or opposite-phase vibration at a first-order mode or second-order mode resonant frequency, and the amplitude ratio of the resonator I301 to the resonator II 303 is 1 or-1. When the electric field to be measured covers the movable comb array 312 and the fixed comb array 313, the electrostatic negative stiffness between the movable comb array 312 and the first resonator 301 can be changed, and the electrostatic negative stiffness under the coverage of the electric field is as follows:
wherein A represents the effective area of coincidence between adjacent plates of two capacitors; g0Representing the distance between the polar plates; v represents a voltage applied to the movable comb tooth array; f is the capacitance of the entire comb array; ε represents a vacuum dielectric constant. Each resonator has two resonance peaks, resonator one: x11And X12(ii) a And a second resonator: x21And X22. Selecting the first resonance peak of each resonator to calculate the amplitude ratio U-X11/X21At this time, the expression of the amplitude ratio of the first resonator 301 and the second resonator 303 is:
where k is the stiffness of the left side resonator one 301 and the right side resonator two 303, k2Is the stiffness, k, of the intermediate resonatorcThe coupling beam 304 between the resonators is stiff. In summary, the magnitude of the electric field to be measured can be obtained by combining the equations (2) and (3).
The electric field intensity measuring method based on the device comprises the following analysis processes:
in the first step, when an electric field E to be measured is applied, the first resonator 301 outputs two peak values X11And X12The second resonator 303 outputs two peak values X21And X22Selecting the first resonance peak value of each resonator to calculate the amplitude ratio U ═ X11/X21。
Second, the amplitude ratio U is substituted into equation (2) because K, K2、KCAll are known parameters, so the stiffness change Δ k of the resonator can be found.
And thirdly, substituting the obtained rigidity variation delta k into the formula (1) to obtain the value of the electric field E to be measured, which causes the rigidity variation.
In this embodiment, a method for measuring an electric field strength with high precision includes the following steps:
the method comprises the following steps: 14 electric field intensity values E with different sizes are applied to the movable comb tooth array 312 and the fixed comb tooth array 313iFrom divider 411, 10 different resonator amplitude ratios U are obtainedi。
Step two: obtaining different amplitude ratios U by a linear fitting methodiFor input electric field intensity EiAs shown in fig. 5.
Step three: an unknown electric field E to be measured0Applied to the movable comb array 312 and the fixed comb array 313, an amplitude ratio U is obtained from the divider 4110。
Step four: the amplitude ratio U is calculated0Substituting into the obtained fitting curve shown in fig. 5 to obtain a corresponding electric field strength value, which is the electric field E to be measured0。
Claims (4)
1. The weak electrostatic field measuring device based on the weak coupling micromechanical resonator is characterized by comprising an electric field measuring chip and a signal processing circuit; the electric field measurement chip comprises at least two identical resonators, specifically comprises a first resonator 301, a resonator array 302 and a second resonator 303, wherein the number of the resonators in the resonator array 302 is zero, namely the resonator array 302 can be empty; the first resonator 301, the resonator array 302 and the second resonator 303 are sequentially arranged in the horizontal direction, namely the resonance direction, in the vertical direction, two sides of each resonator are connected with a mechanical coupling beam 304 in the horizontal direction through a group of resonance beams, and each group of resonance beams is at least one vertical-direction straight beam which is parallel to each other; the two ends of the mechanical coupling beam 304 are respectively fixed on the fixed anchor points 305 through a short beam in the vertical direction, and the shape of the mechanical coupling beam 304 is similar to a bridge shape, so the mechanical coupling beam 304 and the short beams in the vertical direction at the two ends are collectively called as a bridge type coupling beam; the weak coupling between the resonators is realized in such a way that the rigidity of the bridge type coupling beam is far less than that of the resonance beam, so that the weak coupling between the resonators is realized; a comb tooth array 202 composed of a movable comb tooth array 312 and a fixed comb tooth array 313 is arranged on the left side of the first resonator 301 and used for sensitively applying the strength of an electric field and disturbing the weakly coupled resonator; an upper driving electrode 308 and a lower driving electrode 309 are arranged above and below the right side of the second resonator 303, and the resonators are driven to start oscillation together; a regulating electrode 314 is arranged at the right side of the second resonator 303 and used for regulating the vibration state of the resonator; all resonators are connected with the direct current drive electrode 315 at the bottom, and direct current voltage is provided by the direct current drive 315; the whole system uses the first resonator 301 and the second resonator 303 as signal output ends, so that the first detection electrode 306 and the second detection electrode 307 are respectively arranged above and below the right side of the first resonator 301 to form a differential detection electrode of the first resonator 301, and the third detection electrode 310 and the fourth detection electrode 311 are respectively arranged above and below the left side of the second resonator 303 to form a differential detection electrode of the second resonator 303; the signals output from the first detection electrode 306, the second detection electrode 307, the third detection electrode 310, and the fourth detection electrode 311 are processed by the signal processing circuit 205 to obtain the final output signal of the electric field strength measurement chip.
2. The weak electrostatic field measuring device based on the weak coupling micromechanical resonator as claimed in claim 1, wherein one side of the resonator is connected to the horizontal mechanical coupling beam 304 through a set of resonant beams, and the other side is directly fixed on the anchor point 305.
3. The weak electrostatic field measuring apparatus based on weak coupling micromechanical resonator according to claim 1, wherein the mechanical coupling beam 304 is a plurality of horizontal straight beams separated from each other, wherein each straight beam connects two adjacent resonators to each other.
4. A method for performing high-precision electric field strength measurement based on the apparatus of any of claims 1 to 3, comprising the steps of:
the method comprises the following steps: applying a known electric field E to the movable comb array 312 and the fixed comb array 3131Obtaining a set of resonator amplitude ratios ui；
Step two: obtaining amplitude ratio u by linear fitting methodiFor known electric field E1The fitting curve of (1);
step three: an unknown electric field E to be measured0Applied to the movable comb array 312 and the fixed comb array 313 to obtain an amplitude ratio u0；
Step four: the amplitude ratio u is compared0Substituted amplitude ratio uiFor known electric field E1Obtaining a corresponding electric field strength value, which is the unknown electric field E to be measured0。
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| CN112540239B (en) * | 2019-09-20 | 2022-03-18 | 中国科学院电子学研究所 | Multi-structure coupling-based miniature electric field sensor and preparation method thereof |
| AT523342B1 (en) * | 2019-12-18 | 2024-03-15 | Univ Wien Tech | sensor |
| CN111505334A (en) * | 2020-04-30 | 2020-08-07 | 东南大学 | Silicon micro-flow velocity meter with adjustable mechanical sensitivity and measuring range |
| CN113625064B (en) * | 2020-05-09 | 2023-06-27 | 中国科学院空天信息创新研究院 | Torque type miniature electric field sensor based on modal localization |
| CN111487435B (en) * | 2020-05-14 | 2022-03-11 | 东南大学 | Air flow velocity measuring device based on three working modes of weak coupling resonator group |
| CN112163358B (en) * | 2020-09-30 | 2023-09-26 | 中国科学院空天信息创新研究院 | Method and device for realizing reserve pool computing hardware based on coupling MEMS resonator |
| CN113030515B (en) * | 2021-03-11 | 2022-04-22 | 东南大学 | Device for directly measuring amplitude ratio of weak coupling resonator |
| CN114113814A (en) * | 2021-11-24 | 2022-03-01 | 北京中科飞龙传感技术有限责任公司 | Electrostatic force tuning type MEMS electric field sensor and detection method |
| CN114137325B (en) * | 2021-11-30 | 2022-09-27 | 中国人民解放军陆军工程大学 | Bionic circuit, system and method for non-contact electrostatic potential distribution test |
| CN114910714B (en) * | 2022-05-12 | 2024-02-02 | 东南大学 | High-sensitivity charge sensor based on singular point and use method thereof |
| CN117517803B (en) * | 2023-11-13 | 2024-05-07 | 北京信息科技大学 | Vertical modulation resonant electric field sensor and preparation method thereof |
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| CN101063630A (en) * | 2007-06-01 | 2007-10-31 | 中国计量学院 | Infrared detector structure based on micro-bridge resonator and manufacturing method |
| CN101685119B (en) * | 2008-09-24 | 2012-06-27 | 中国科学院电子学研究所 | Resonance miniature electric field sensor |
| CN104180919B (en) * | 2014-08-12 | 2017-05-17 | 南京理工大学 | High-precision temperature measuring system based on micro resonator |
| CN204256053U (en) * | 2014-12-18 | 2015-04-08 | 南京信息工程大学 | A kind of micro mechanical vibration formula electric-field sensor |
| CN106645999B (en) * | 2016-09-20 | 2023-01-24 | 西北工业大学 | Ultra-high sensitivity micromechanical resonant electrostatic meter |
| CN108344900B (en) * | 2018-01-11 | 2020-11-06 | 西北工业大学 | Large-range room temperature single-electron resolution electrometer based on modal localization effect |
| CN108375371B (en) * | 2018-01-11 | 2020-04-03 | 西北工业大学 | Four-degree-of-freedom weak coupling resonant accelerometer based on modal localization effect |
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