CN109642985A - 模式转换器及其制造方法 - Google Patents

模式转换器及其制造方法 Download PDF

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CN109642985A
CN109642985A CN201780043323.0A CN201780043323A CN109642985A CN 109642985 A CN109642985 A CN 109642985A CN 201780043323 A CN201780043323 A CN 201780043323A CN 109642985 A CN109642985 A CN 109642985A
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mode converter
layer
transmission line
isolated groove
buried oxide
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CN109642985B (zh
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J.德拉克
D.勒罗斯
H.尼克南
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Lockley Photonics Co Ltd
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    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/14—Mode converters
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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Abstract

本案提供一种光学模式转换器和由包括双绝缘体上硅层结构的晶片制造所述光学模式转换器的方法。所述方法包括：在DSOI层结构的装置层的部分上提供第一掩膜；向下蚀刻装置层的未遮掩部分至至少上掩埋氧化物层，由此提供腔；蚀刻第一隔离沟槽和第二隔离沟槽至模式转换器层，所述模式转换器层：在上掩埋氧化物层相对于装置层的相对侧上并且介于上掩埋氧化物层与下掩埋氧化物层之间，下掩埋氧化物层在衬底上方；其中第一隔离沟槽和第二隔离沟槽限定锥形波导；用绝缘材料填充第一隔离沟槽和第二隔离沟槽，由此光学隔离锥形波导与剩余的模式转换器层；和再生长装置层的所蚀刻区域。

Description

模式转换器及其制造方法
技术领域
本发明涉及模式转换器及其制造方法，并且具体地讲，涉及使用例如具有双绝缘体上硅层的衬底来制造的模式转换器。
背景技术
光子集成电路(PIC)中光学模式的尺寸通常比所连接的光纤线缆的光学模式小很多。举例来说，光纤线缆中光学模式可大约为13μm x 13μm。然而，PIC中光学模式通常可为几微米或更小。光学模式的这种失配可能会导致将PIC连接至光纤线缆时的联接损耗。
一般来说，增大PIC中光学模式的模式尺寸这一解决方案并不可行，因为所得的光学电路不太可能过大。
现有技术中已知的模式转换器将光纤线缆的光学模式转换成PIC中的光学模式(反之亦然)。一般来说，现有技术的模式转换器分为两类：
(1)涉及改良纤维剖面(例如，透镜或锥形纤维)和经由安装在纤维块上的纤维的与PIC的主动对准的转换器。
(2)通过使用用于被动对准的集成v形槽或经由独立纤维块的纤维附接，在PIC内提供锥形波导。
属于种类(1)的模式转换器通常要求非常精密的纤维对准公差，并且封装成本可能会很高，因为零件数目增多并且纤维块与PIC的精确主动对准也更费力。
然而，属于种类(2)的模式转换器通常导致PIC形貌的大幅改变，这是因为模式转换器的高度相比PIC上剩余的部件相对大。这一形貌的变化对于制造时使用的光刻工艺来说可能具有挑战性，因为导致PIC上的其他部件的尺寸控制变差。本发明旨在提供一种在不存在现有技术的形貌限制的情况下制造低损耗、被动对准的PIC的制造方法。
发明内容
本发明在最宽广范围内提供一种使用双绝缘体上硅结构制造整体式光学模式转换器的方法，其中模式转换器相对于晶片的上表面而掩埋。
在第一方面，本发明提供一种由包括双绝缘体上硅(DSOI)层结构的晶片制造光学模式转换器的方法，包括以下步骤：在DSOI层结构的装置层的部分上提供第一掩膜；向下蚀刻装置层的未遮掩部分至至少上掩埋氧化物层，由此提供腔；蚀刻第一隔离沟槽和第二隔离沟槽至模式转换器层，所述模式转换器层：在上掩埋氧化物层相对于装置层的相对侧上并且介于上掩埋氧化物层与下掩埋氧化物层之间，下掩埋氧化物层在衬底上方；其中第一隔离沟槽和第二隔离沟槽限定锥形波导；用绝缘材料填充第一隔离沟槽和第二隔离沟槽，由此光学隔离锥形波导与剩余的模式转换器层；和再生长装置层的所蚀刻区域。
有利地，这种方法改善装置和集成部件的尺寸公差。此外，装置层的厚度均匀性(使用预制DSOI晶片导致的高均匀性)并不受到模式转换器的制造的危害。
在第二方面，本发明提供一种在包括双绝缘体上硅(DSOI)层结构的晶片上形成的光学模式转换器，包括：衬底，其上方是下掩埋氧化物层；模式转换器层，其在下掩埋氧化物层上方，并且包括：锥形波导，其由安置于第一隔离沟槽和第二隔离沟槽中的绝缘体包覆；和块区域，其邻接绝缘体并且在其相对于锥形波导的侧面上，由与锥形波导相同的材料形成；上掩埋氧化物层，其在模式转换器层上方并且在锥形波导上方具有间隙；和装置层，其在上掩埋氧化物层上方；其中装置层包括限定肋形波导的两个所蚀刻部分，并且肋形波导的最高表面与装置层的最高表面共平面。
现在将提出本发明的任选特征。这些特征可单独或与本发明的任何方面结合地应用。
晶片可为双绝缘体上硅晶片。方法可包括从装置层的再生长区域蚀刻肋形波导的步骤。
向下蚀刻装置层的未遮掩部分至至少上掩埋氧化物层的步骤可包括：第一蚀刻步骤，从装置层的上表面蚀刻至上掩埋氧化物层的上表面；和第二蚀刻步骤，从上掩埋氧化物层的上表面蚀刻至模式转换器层的上表面。第二蚀刻步骤可包括并不去除腔中的所有掩埋氧化物。举例来说，掩埋氧化物的部分可保持在腔的相对侧。
方法还可在蚀刻未掩膜部分与蚀刻第一和第二隔离沟槽之间包括在以下各项上沉积氧化阻隔件的步骤：(i)第一掩膜，和(ii)腔，其中腔由侧壁和基座限定。填充第一隔离沟槽和第二隔离沟槽的步骤可包括热氧化模式转换器层，由此用氧化物填充第一隔离沟槽和第二隔离沟槽。
方法可包括在再生长装置层的蚀刻区域之后的以下步骤：平面化装置层的再生长区域，由此使其与装置层的未蚀刻区域的最高表面共平面。
第一锥形波导可被提供介于9μm与15μm之间的第一宽度和小于1μm的第二宽度。
所蚀刻腔的宽度可基本上比锥形波导的最宽宽度宽。
方法还可包括以下步骤：在模式转换器的第一端蚀刻v形槽接口，由此使得锥形波导的输入面悬挂v形槽接口，以便允许光纤线缆与锥形波导的被动对准。
方法还可包括抛光模式转换器的第一端的步骤，由此提供用于与光纤线缆主动对准的平面输入面。
安置于第一隔离沟槽和第二隔离沟槽内的绝缘体可为二氧化硅。第一隔离沟槽和第二隔离沟槽可分别具有介于0.4μm与1.0μm之间的宽度。
附图说明
现将参考附图以举例的方式来描述本发明的实施方案，在附图中：
图1A和2B示出根据本发明的模式转换器；
图2示出图1A和1B的模式转换器的俯视平面图；
图3A和3B示出模式转换器的横截面图；
图4示出连接至光纤线缆时模式转换器的横截面图；图5示出变体模式转换器；和
图6A至6N示出以上各附图的模式转换器的各个制造阶段。
具体实施方式
图1A示出根据本发明的模式转换器100的透视图。在本实施例中，模式转换器可经由v形槽21被动地连接至光纤线缆。v形槽实现光纤线缆与模式转换器的悬挂部分101的机械对准。
如图1B中更清楚所示，悬挂部分101包括在水平方向上渐缩的锥形波导102。锥形波导102可描述为大体三棱柱。锥形波导安置于模式转换器的模式转换器层5内，其上方是装置层4。装置层和模式转换器层由氧化物层2分隔开。装置层中为由两个通道17a和17b限定的肋形波导16，所述两个通道已被蚀刻至装置层的最高表面。通道被蚀刻以提供到达肋形波导的渐缩，由此使得宽度沿长度变窄。锥形波导102和肋形波导16的渐缩允许模式转换器将光纤线缆内的光学模式转换成光子集成电路内的光学模式。
因为锥形波导102定位于装置层4下方，所以可称为掩埋锥形波导。锥形波导和肋形波导的长度可调谐，由此实现其间的低损耗联接。
图2为图1A和1B中所示的模式转换器100的俯视平面图。这里可看出，肋形波导16(和锥形波导102)延伸到模式转换器的输入面22，所述输入面悬挂v形槽21。输入面可包括减反射涂层，所述涂层可进一步降低损耗。从本图还可易于看出，通道17a和17b(限定肋形波导)彼此成角度，由此提供在长度上渐缩的肋形波导。对于线性渐缩(即，锥角恒定)来说，模式转换器100的总体长度通常介于6到10mm的范围内，或者通过使用非线性渐缩设计而甚至更短。指出两个横截面：分别在图3A和3B中示出的A-A’和B-B’。
图3A示出沿A-A’的横截面。模式转换器通常包括第一氧化物层3，其上方是模式转换器层5。模式转换器层5由第二氧化物层2至少部分地封端。锥形波导102由隔离沟槽13a和13b至少部分地限定，所述隔离沟槽用以光学隔离锥形波导102与剩余的模式转换器层5。隔离沟槽可由例如二氧化硅形成。第二氧化物层2上方是装置层4，其之至少部分提供肋形波导16。
肋形波导16和锥形波导102在横截面A-A’所指示的位置具有宽度305，其部分地限定光学模式。由于两个波导在宽度上渐缩，在如图3B所示的横截面B-B’所指示的位置处的宽度306比宽度305窄。输入面22的宽度可介于9μm到15μm之间，而模式转换器末端的宽度可为大约1μm或更小。在一些实施例中，输入面的宽度为13μm，并且模式转换器末端的宽度为0.3μm。锥形波导渐缩的长度可为大约3.5mm。肋形波导的高度可介于1μm到5μm之间，如从第二氧化物层2的上表面测得。锥形波导102的高度可介于7μm到12μm之间，如从第一氧化物层3与第二氧化物层2之间测得。
图4示出连接至光纤线缆20时的模式转换器100。光纤线缆20位于v形槽内，并且其外部包覆18邻接v形槽的底层。因此，光纤线缆的内核19与模式转换器的输入面22对准，由此使得光可在损耗相对少的情况下穿过内核到达锥形波导102和肋形波导106。这种形式的对准称作被动对准，因为装置的结构实现内核18与输入面22的机械对准。
相反，图5示出利用主动对准的变体模式转换器。主动对准是如下过程：将光学信号从光纤线缆提供至模式转换器；测量光学信号随位置而变的损耗；以及校准纤维相对于模式转换器的位置，由此使得光学信号的损耗最小。
因此，如图5所示，提供大体平面的表面501，由此允许主动对准实现最大灵活性。锥形波导102可相对于所连接的光纤线缆在水平和竖直方向上移位。
图6A到6N示出如上所述的模式转换器100的各个制造阶段。
在第一步骤，提供晶片1，所述晶片1包括双绝缘体上硅(DSOI)层结构，如图6A所示。晶片包括衬底6，例如硅处理晶片，其上方是第一或下掩埋第二氧化物层3。第一掩埋氧化物层3上方是模式转换器层5，所述模式转换器层5向上延伸(即，远离衬底6)，以接触第二掩埋氧化物层2。第二掩埋氧化物层2(即，在相对于模式转换器层5的侧上)上方是装置层4。装置层4和模式转换器层5可由硅形成。第一和第二掩埋氧化物层可由二氧化硅形成。模式转换器层可介于7μm与12μm之间，在一些实施例中，高度为9.85μm(如从第一掩埋氧化物层3顶部到第二掩埋氧化物层2底部测得)。第一和第二掩埋氧化物层的厚度可介于0.3μm与1μm之间，在一些实施例中，厚度为0.4μm。掩埋氧化物层应将模式转换器层5与装置层4(氧化物已被去除处除外)和衬底6光学隔离。装置层的厚度通常介于1μm与5μm之间，并且在一些实施例中，厚度为3μm。取决于晶片的直径(200mm或150mm)，衬底6的厚度可为725μm或675μm。
在下一步骤，如图6B所示，将硬掩膜层7安置于装置层4上。硬掩膜层可为从硅装置层4热生长的二氧化硅层。硬掩膜为可在稍后的处理步骤中去除的牺牲层。硬掩膜层充当装置层4的有效蚀刻掩膜和保护层。因此，硬掩膜层应充分厚，例如300nm，如从装置层顶部至硬掩膜7顶部测得。
在图6C中，已使用光刻法图案化硬掩膜7，然后沿着装置层4的部分向下蚀刻，以便去除将制造锥形波导的晶片表面区中的硅。装置层中形成腔8。优选使用干式蚀刻技术来维持对所蚀刻特征的良好尺寸控制。
下一处理步骤在图6D中示出。在腔8内图案化并且蚀刻上或第二掩埋氧化物层2。最优化腔内掩埋氧化物区域的宽度10，以便改善腔8底部的平版印刷，并且提供装置层4中肋形波导部分的光学隔离。接下来，如图6E所示，在装置上方沉积氧化阻隔件11。优选地，使用阻隔件厚度低于200nm的低压化学气相沉积(LPCVD)技术来沉积氧化阻隔件，由此防止衬底上的过量应力。
在图6F中，使用光刻法图案化氧化阻隔件11和上或第二掩埋氧化物层2。随后，蚀刻模式转换器层5至掩埋氧化物层3的上表面，由此形成窄沟槽12a和12b，所述沟槽光学隔离锥形波导102。沟槽12a和12b沿其长度(在进入图6F的平面的方向上)彼此成角度，由此使得所述沟槽之间的距离随长度而变化。锥形波导的窄端通常设计为宽度小于0.5μm(如在沟槽12a和12b之间测得)，因为这有助于在装置层4中提供肋形波导16的低损耗联接。隔离沟槽12a和12b的宽度(如在水平跨越衬底6的方向上测得)应最小化(并且通常在0.4μm-1.0μm的范围内)，同时仍提供必要的光学隔离。
图6G示出后续步骤，其中隔离沟槽12a和12b已被填充以形成锥形波导包覆13a和13b。这可通过热氧化衬底6来实现，由此使得包覆由二氧化硅形成。氧化阻隔件11阻止表面的任何氧化，因此装置层4的厚度不受这一步骤影响。有利地，这意味着，这一层的精密控制的均匀性得以保留。然后去除氧化阻隔件11，例如通过使用磷酸等湿式化学蚀刻剂(因为这样不会蚀刻下面的二氧化硅7或硅4)，从而得到如图6H所示的装置。
接着，在腔8中再生装置层4，如图6I所示。当装置层4由硅形成时，使用选择的硅外延工艺。这种工艺仅在硅表面生长硅，因此氧化物层7上没有生长硅。再生工艺导致氧化物层7上方的过生长区域14。因此，如图6J所示，平面化再生长区域14，以提供与装置层4的原始表面高度匹配的再生长区域15。平面化可通过化学机械抛光工艺来执行。
在后续步骤中，如图6K所示，去除先前的硬掩膜7(例如使用氢氟酸等湿式化学蚀刻剂)，并且提供新的硬掩膜9。新的硬掩膜可通过热生长得到(因为可为氧化物掩膜)或可通过沉积得到。现在，装置的最高表面为大体平面的，并且应当理解，随后在装置层4中制造的集成光子电路的光子元件不因模式转换器100的存在而受到危害(相比现有技术方法)。
图6L示出下一制造步骤，其中使用光刻法图案化硬掩膜9，然后优选使用干式蚀刻工艺蚀刻，以维持良好尺寸公差。在这一步骤之后，蚀刻装置层4以制造肋形波导16，所述肋形波导16与模式转换器层5中的锥形波导102对准。肋形波导16通常由如上所述生成的两个通道17a和17b限定。结果在图6M(i)中示出。
硅光子电路领域的技术人员应当理解，现在可在经由肋形波导16连接至锥形波导102以达成从光子集成电路至光纤线缆的低损耗联接(反之亦然)的装置层中制造各种光子元件。
替代实施例在图6M(ii)中示出，其中图6C中蚀刻的腔8制作为比锥形波导102的宽度显著宽。氧化物隔离区域的宽度10通常为几微米宽，由此确保肋形波导16与模式转换器层5光学隔离。有利地，光致抗蚀剂在锥形波导区域中在腔8底部更均匀。这样一来实现了较好的尺寸控制。另外，宽腔不是锥形，但仍维持恒定宽度，这在平面化工艺期间可能有益。例如，已发现，在化学机械抛光期间，抛光率随腔宽而变化。
图6N示出模式转换器100的最后处理步骤，其中在晶片顶部生长或沉积包覆层，由此充当下游处理步骤的硬掩膜并且向光子集成电路提供钝化和保护。本领域的技术人员应当理解，可在装置层中制造包括(但不限于)多工器、解多工器和其他波长选择性器件的宽泛范围的被动光子元件。同样，增添掺杂、触点和金属化等其他下游工艺模块允许实现开关、二极管和调节剂等有源光子器件。
虽然已结合上述示例性实施方案描述了本发明，但是当给出本公开时，许多等效的修改和变型对于本领域的技术人员将显而易见。因此，以上列出的本发明的示例性实施方案被认为是说明性的而不是限制性的。在不背离本发明的精神和范围的情况下，可对所描述实施方案进行各种改变。
以上提及的所有参考文献通过引用并入本文。
特征列表
1 晶片
2 掩埋氧化物层
3 掩埋氧化物层
4 装置层
5 模式转换器层
6 衬底
7 氧化物层
8 装置层中的腔
9 新的氧化物层
10 氧化物隔离区域
11 氧化阻隔件
12a，12b 隔离沟槽
13a，13b 锥形波导包覆
14 过生长区域
15 再生长区域
16 肋形波导
17a，17b 第一和第二通道
18 光纤线缆包覆
19 光纤线缆内核
20 光纤线缆
21v 形槽
22 输入面
100 模式转换器
101 悬挂部分
102 锥形波导
305 第一锥形波导的宽度
306 第二锥形波导的宽度
602 干式蚀刻面
701 肋形波导的高度
702 装置层的高度

Claims (17)

1.一种由包括双绝缘体上硅(DSOI)层结构的晶片制造光学模式转换器的方法，包括以下步骤：
在所述DSOI层结构的装置层的部分上提供第一掩膜；
向下蚀刻所述装置层的未遮掩部分至至少上掩埋氧化物层，由此提供腔；
蚀刻第一隔离沟槽和第二隔离沟槽至模式转换器层，所述模式转换器层：
在所述上掩埋氧化物层相对于所述装置层的相对侧上并且介于所述上掩埋氧化物层与下掩埋氧化物层之间，所述下掩埋氧化物层在衬底上方；
其中所述第一隔离沟槽和所述第二隔离沟槽限定锥形波导；
用绝缘材料填充所述第一隔离沟槽和所述第二隔离沟槽，由此光学隔离所述锥形波导与剩余的模式转换器层；和
再生长所述装置层的所述所蚀刻区域。
2.如权利要求1所述的方法，还包括以下步骤：
从所述装置层的所述再生长区域蚀刻肋形波导。
3.如权利要求1或权利要求2所述的方法，其中向下蚀刻所述装置层的所述未遮掩部分至至少所述上掩埋氧化物层的步骤可包括：
第一蚀刻步骤，从所述装置层的上表面蚀刻至所述上掩埋氧化物层的上表面；和
第二蚀刻步骤，从所述上掩埋氧化物层的上表面蚀刻至所述模式转换器层的上表面。
4.如权利要求3所述的方法，其中所述第二蚀刻步骤并不去除所述腔中的所有所述掩埋氧化物层。
5.如任一前述权利要求所述的方法，还在蚀刻所述未掩膜部分与蚀刻所述第一和第二隔离沟槽之间包括以下步骤：
在以下各项上沉积氧化阻隔件：(i)所述第一掩膜，和(ii)所述腔，其中所述腔由侧壁和基座限定。
6.如权利要求5所述的方法，其中填充所述第一隔离沟槽和所述第二隔离沟槽的步骤包括：
热氧化所述模式转换器层，由此用氧化物填充所述第一隔离沟槽和所述第二隔离沟槽。
7.如任一前述权利要求所述的方法，还包括在再生长所述装置层的所述蚀刻区域之后的以下步骤：
平面化所述装置层的所述再生长区域，由此使其与所述装置层的所述未蚀刻区域的最高表面共平面。
8.如任一前述权利要求所述的方法，其中所述锥形波导被提供介于9μm与15μm之间的第一宽度和小于1μm的第二宽度。
9.如任一前述权利要求所述的方法，其中所述所蚀刻腔的宽度基本上比所述锥形波导的最宽宽度宽。
10.如任一前述权利要求所述的方法，还包括以下步骤：
在所述模式转换器的第一端蚀刻v形槽接口，由此使得所述锥形波导的输入面悬挂所述v形槽接口，以便允许光纤线缆与所述锥形波导的被动对准。
11.如权利要求1-9中任一项所述的方法，还包括以下步骤：
抛光所述模式转换器的第一端，由此提供用于与光纤线缆主动对准的平面输入面。
12.一种在包括双绝缘体上硅(DSOI)层结构的晶片上形成的光学模式转换器，包括：
衬底，其上方是下掩埋氧化物层；
模式转换器层，其在所述下掩埋氧化物层上方，并且包括：
锥形波导，其由安置于所述第一隔离沟槽和所述第二隔离沟槽中的绝缘体包覆；和
块区域，其邻接所述绝缘体并且在其相对于所述锥形波导的侧面上，由与所述锥形波导相同的材料形成；上掩埋氧化物层，其在所述模式转换器层上方并且在所述锥形波导上方具有间隙；和
装置层，其在所述上掩埋氧化物层上方；
其中所述装置层包括限定肋形波导的两个所蚀刻部分，并且所述肋形波导的最高表面与所述装置层的最高表面共平面。
13.如权利要求12所述的光学模式转换器，其中所述锥形波导具有介于9μm与15μm之间的第一宽度和小于1μm的第二宽度。
14.如权利要求12或权利要求13所述的光学模式转换器，还包括在所述模式转换器的第一端的v形槽接口，其中所述锥形波导的输入面悬挂所述v形槽接口，以便允许光纤线缆与所述锥形波导的被动对准。
15.如权利要求12或权利要求13所述的光学模式转换器，还包括所述模式转换器的抛光第一端，由此提供用于与光纤线缆主动对准的平面输入面。
16.如权利要求12至15中任一项所述的光学模式转换器，其中所述绝缘体为二氧化硅。
17.如权利要求12至16中任一项所述的光学模式转换器，其中所述第一隔离沟槽和所述第二隔离沟槽分别具有介于0.4μm与1.0μm之间的宽度。
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