CN109477936A - 集成结构以及其制造方法 - Google Patents
集成结构以及其制造方法 Download PDFInfo
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- CN109477936A CN109477936A CN201780042757.9A CN201780042757A CN109477936A CN 109477936 A CN109477936 A CN 109477936A CN 201780042757 A CN201780042757 A CN 201780042757A CN 109477936 A CN109477936 A CN 109477936A
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- Prior art keywords
- waveguide
- cmos
- silicon
- silicon wafer
- cavity
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 120
- 239000010703 silicon Substances 0.000 claims abstract description 120
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- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- -1 SiGeSn Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910005898 GeSn Inorganic materials 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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Classifications
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- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
- H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (3)
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US201662362012P | 2016-07-13 | 2016-07-13 | |
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PCT/EP2017/067767 WO2018011373A1 (en) | 2016-07-13 | 2017-07-13 | Integrated structure and manufacturing method thereof |
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CN109477936A true CN109477936A (zh) | 2019-03-15 |
CN109477936B CN109477936B (zh) | 2022-03-29 |
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CN201780042757.9A Active CN109477936B (zh) | 2016-07-13 | 2017-07-13 | 集成结构以及其制造方法 |
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CN201780043323.0A Active CN109642985B (zh) | 2016-07-13 | 2017-07-13 | 模式转换器及其制造方法 |
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CN (2) | CN109642985B (zh) |
GB (2) | GB2552263B (zh) |
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CN112987174A (zh) * | 2019-12-13 | 2021-06-18 | 台湾积体电路制造股份有限公司 | 半导体装置以及用于产生其布局图的方法及系统 |
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WO2018011587A1 (en) * | 2016-07-13 | 2018-01-18 | Rockley Photonics Limited | Mode converter and method of fabricating thereof |
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JP7207087B2 (ja) * | 2019-03-28 | 2023-01-18 | 住友大阪セメント株式会社 | 光導波路素子 |
GB2583348A (en) * | 2019-04-24 | 2020-10-28 | Univ Southampton | Photonic chip and method of manufacture |
GB2584681B (en) | 2019-06-11 | 2021-12-29 | Rockley Photonics Ltd | Interposer |
GB2585391B (en) * | 2019-08-23 | 2021-10-27 | Rockley Photonics Ltd | Method of fabricating an optoelectronic component |
US11239152B2 (en) | 2019-09-04 | 2022-02-01 | International Business Machines Corporation | Integrated circuit with optical tunnel |
US11169328B2 (en) * | 2019-09-20 | 2021-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photonic structure and method for forming the same |
KR20220127820A (ko) | 2019-12-11 | 2022-09-20 | 록클리 포토닉스 리미티드 | 광학 감지 모듈 |
WO2021116766A1 (en) | 2019-12-11 | 2021-06-17 | Rockley Photonics Limited | Optical sensing module |
CN111722321A (zh) * | 2020-01-19 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | 一种光膜转换器及其制备方法 |
KR20220127932A (ko) | 2020-01-29 | 2022-09-20 | 사이퀀텀, 코퍼레이션 | 저손실 고효율 포토닉 위상 시프터 |
CN211928243U (zh) * | 2020-03-02 | 2020-11-13 | 苏州旭创科技有限公司 | 一种半导体光耦合结构和硅光集成芯片 |
KR20220144410A (ko) * | 2020-03-03 | 2022-10-26 | 사이퀀텀, 코퍼레이션 | 광자 디바이스들을 위한 제작 방법 |
WO2022029486A1 (en) | 2020-08-03 | 2022-02-10 | Rockley Photonics Limited | Optical sensing module |
CN116472489A (zh) | 2020-08-03 | 2023-07-21 | 洛克利光子有限公司 | 光学感测模块 |
WO2022064273A1 (en) | 2020-09-28 | 2022-03-31 | Rockley Photonics Limited | Optical sensing module |
US11588062B2 (en) * | 2020-10-08 | 2023-02-21 | Globalfoundries U.S. Inc. | Photodetectors including a coupling region with multiple tapers |
GB2601809A (en) * | 2020-12-11 | 2022-06-15 | Rockley Photonics Ltd | Wafer with buried V-groove cavity for fiber coupling |
US11860414B2 (en) * | 2020-12-30 | 2024-01-02 | Globalfoundries U.S. Inc. | Edge couplers including a grooved membrane |
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US20190243070A1 (en) | 2019-08-08 |
GB2552264A9 (en) | 2020-12-23 |
CN109642985A (zh) | 2019-04-16 |
GB2552264A (en) | 2018-01-17 |
GB2552264B (en) | 2021-06-02 |
US20200258791A1 (en) | 2020-08-13 |
GB2552263A (en) | 2018-01-17 |
US11133225B2 (en) | 2021-09-28 |
WO2018011587A1 (en) | 2018-01-18 |
US20210335677A1 (en) | 2021-10-28 |
CN109477936B (zh) | 2022-03-29 |
WO2018011373A1 (en) | 2018-01-18 |
US10643903B2 (en) | 2020-05-05 |
US20190244866A1 (en) | 2019-08-08 |
GB201711258D0 (en) | 2017-08-30 |
GB201711282D0 (en) | 2017-08-30 |
US11037839B2 (en) | 2021-06-15 |
US20200243397A1 (en) | 2020-07-30 |
US11600532B2 (en) | 2023-03-07 |
CN109642985B (zh) | 2021-03-12 |
GB2552263B (en) | 2019-11-20 |
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