CN109642038B - 改性成型品的制造方法、成型品、隔膜和隔膜阀 - Google Patents
改性成型品的制造方法、成型品、隔膜和隔膜阀 Download PDFInfo
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- CN109642038B CN109642038B CN201780051212.4A CN201780051212A CN109642038B CN 109642038 B CN109642038 B CN 109642038B CN 201780051212 A CN201780051212 A CN 201780051212A CN 109642038 B CN109642038 B CN 109642038B
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- modified
- molded article
- diaphragm
- tetrafluoroethylene
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Abstract
本发明提供一种用于制造改性成型品的制造方法,该改性成型品能够实现不容易产生粉粒的隔膜。一种改性成型品的制造方法,其特征在于,其包括下述工序:将改性聚四氟乙烯成型来得到成型品的工序,该改性聚四氟乙烯包含四氟乙烯单元和基于能够与四氟乙烯共聚的改性单体的改性单体单元;以及在270℃~310℃对上述成型品照射30kGy以上且小于70kGy的放射线来得到改性成型品的工序。
Description
技术领域
本发明涉及改性成型品的制造方法、成型品、隔膜和隔膜阀。
背景技术
在半导体制造工厂中,在半导体制造中使用的腐蚀性高的化学药品等的供给中使用了隔膜阀。聚四氟乙烯(PTFE)和四氟乙烯/全氟烷基乙烯基醚共聚物(PFA)由于具有优异的耐化学药品性、非粘合性等而被用作隔膜阀的构成材料。但其出现了从隔膜阀产生粉粒、使半导体制造的成品率降低等问题。
在专利文献1中,现有的隔膜阀中的阀箱为PTFE制,但由于该阀箱通过切削加工而制成,因而会附着有毛刺等异物,据认为无法避免粉粒的产生。并且认为,通过至少使阀箱由PFA成型品构成,不会因切削加工而附着毛刺等异物,可避免粉粒的产生。
在专利文献2中,在隔膜的硬度与阀座的硬度不同的情况下,在将隔膜压抵至阀座时,据认为硬度低的部件容易被刮掉。并且认为,通过使隔膜的硬度与阀座的硬度大致相等,能够抑制隔膜阀内的粉粒的产生。另外,作为其一例,记载了使隔膜的材质为改性PTFE、使阀座的材质为PFA的情况。
现有技术文献
专利文献
专利文献1:日本特开平11-37329号公报
专利文献2:日本特开2012-26476号公报
专利文献3:日本特开平01-33810号公报
专利文献4:日本特开平10-316761号公报
专利文献5:日本特开2000-159914号公报
专利文献6:日本特开2013-27875号公报
专利文献7:日本特开2014-44401号公报
专利文献8:日本特开平09-278907号公报
发明内容
发明所要解决的课题
但是,随着半导体电路的微细化,要求进一步降低粉粒的技术。
鉴于上述现状,本发明的目的在于提供一种用于制造改性成型品的制造方法,该改性成型品能够实现不容易产生粉粒的隔膜。
本发明的目的还在于提供不容易产生粉粒的成型品、隔膜和隔膜阀。
用于解决课题的手段
本发明人对用于解决上述课题的手段进行了深入研究,结果查明,在使隔膜的材质为改性聚四氟乙烯(改性PTFE)、使阀座的材质为四氟乙烯/全氟烷基乙烯基醚共聚物(PFA)的情况下,尽管两者具有同等的硬度,但隔膜的磨耗仍大于阀座,产生了粉粒。发明人进一步进行了研究,结果发现,在特定条件下对改性PTFE进行放射线处理而得到的改性成型品即使在与PFA成型品反复抵接和分开的情况下,也不容易产生粉粒,从而完成了本发明。
另外,如专利文献3~8所述,对PTFE和PFA照射放射线而对它们进行改性的技术是广为人知的。但是,发明人同时还发现,为了得到不容易产生粉粒的改性PTFE的改性成型品,需要在与以往不同的条件下照射放射线。
即,本发明涉及一种改性成型品的制造方法,其特征在于,其包括下述工序:将改性聚四氟乙烯成型来得到成型品的工序,该改性聚四氟乙烯包含四氟乙烯单元和基于能够与四氟乙烯共聚的改性单体的改性单体单元;以及在270℃~310℃对上述成型品照射30kGy以上且小于70kGy的放射线来得到改性成型品的工序。
上述改性聚四氟乙烯中,上述改性单体单元相对于四氟乙烯单元和上述改性单体单元的合计优选为0.001质量%~1质量%。
上述改性聚四氟乙烯的二次熔点优选为320℃~329℃。
优选在得到上述成型品后进一步包括通过机械加工对上述成型品进行加工的工序。
优选在得到上述改性成型品后进一步包括通过机械加工对上述改性成型品进行加工的工序。
上述改性成型品优选为隔膜。
本发明还涉及一种成型品,其是改性聚四氟乙烯的成型品,其特征在于,上述改性聚四氟乙烯包含四氟乙烯单元、基于能够与四氟乙烯共聚的改性单体的改性单体单元以及叔碳,上述叔碳相对于四氟乙烯单元和上述改性单体单元的合计为0.035摩尔%~0.100摩尔%。
上述改性聚四氟乙烯中,上述改性单体单元相对于四氟乙烯单元和上述改性单体单元的合计优选为0.001质量%~1质量%。
本发明还涉及一种隔膜,其特征在于,其由上述成型品形成。
本发明还涉及一种隔膜,其特征在于,其是在270℃~310℃对改性聚四氟乙烯照射30kGy以上且小于70kGy的放射线而得到的。
本发明还涉及一种隔膜阀,其特征在于,其具备阀座以及上述隔膜。上述阀座优选由四氟乙烯/全氟烷基乙烯基醚共聚物构成。
发明效果
本发明的制造方法能够制造出可实现不容易产生粉粒的隔膜的改性成型品。
本发明的成型品不容易产生粉粒。
本发明的隔膜和隔膜阀不容易产生粉粒。
附图说明
图1是示出本发明的隔膜和隔膜阀的一个实施方式的截面示意图。
图2是用于说明粉粒产生试验的方法的示意图。
图3是实验例1中实施的粉粒产生试验后的PFA片的照片。可知在PFA片上附着有析出物。
具体实施方式
以下具体说明本发明。
本发明的制造方法包括将改性聚四氟乙烯(改性PTFE)成型来得到成型品的工序。在本说明书中,有时将该工序称为成型工序。
作为上述成型的方法,可以采用用于将上述改性PTFE成型的公知方法,可以举出例如压塑成型法、柱塞挤出成型法、等静压成型等。还可以举出涂布上述改性PTFE的水性分散液后进行干燥和烧制的方法,但由于其不容易制造出要求耐挠曲性的隔膜等成型品,因而在本发明中不优选该方法。
作为上述成型的方法,其中优选上述压塑成型法。即,上述成型工序优选包括下述工序:通过将上述改性PTFE的粉末填充到模具中并进行压缩来得到预成型品(preform)的工序;以及将上述预成型品加热至上述改性PTFE的一次熔点以上来得到上述成型品的工序。
对上述成型品的形状没有特别限定,可以举出例如膜、片、板、棒、块、圆筒、容器、管、风箱、密封垫、垫片等。另外,上述成型品也可以是通过压塑成型法得到的成型品(也称为块)。另外还可以通过成型为隔膜的形状而得到具有隔膜形状的成型品。
上述制造方法还优选在通过上述成型工序得到上述成型品后,进一步包括通过机械加工将上述成型品加工成所期望的形状的工序。上述改性PTFE即使加热至熔点以上,熔融粘度也非常高,不可能进行通常的用于热塑性树脂的挤出成型、注射成型。因此不容易由上述改性PTFE的粉末直接得到隔膜等具有复杂且微细的形状的成型品。但是,通过对预先成型的成型品进行机械加工,还能够容易地得到具有复杂且微细的形状的成型品。
作为上述机械加工的方法,可以举出切削加工。例如,在得到上述改性PTFE的块之后,可以通过切削加工从上述块削出膜,通过切削加工将上述膜加工成所期望的形状。
该加工工序中,还优选通过上述机械加工(优选通过上述切削加工)加工成隔膜的形状。
上述改性PTFE包含四氟乙烯(TFE)单元和基于能够与TFE共聚的改性单体的改性单体单元。与仅由TFE单元形成的均聚PTFE相比,上述改性PTFE具有耐蠕变性优异的优点,因此,上述制造方法可制造出能够适用于隔膜的改性成型品。
上述改性PTFE中,上述改性单体单元的含量相对于TFE单元和上述改性单体单元的合计为0.001~1质量%、更优选为0.01~1质量%、进一步优选为0.02~0.20质量%。上述改性单体单元的含量若过少,则耐蠕变性降低;该含量若过多,则拉伸强度、抗裂性降低,并且与大量使用昂贵的全氟乙烯基醚相比,耐蠕变性的改善效果小,在经济上不利。在本说明书中,上述改性单体单元是指改性PTFE的分子结构的一部分且是来自改性单体的部分。上述改性单体单元的含量可以通过日本专利第3177983号公报所记载的傅利叶转换型红外分光法(FT-IR)来求出。
上述改性PTFE具有非熔融加工性。上述非熔融加工性是指依据ASTM D-1238和D-2116,在高于结晶化熔点的温度下无法测定熔体流动速率的性质。
上述改性PTFE的标准比重[SSG]优选为2.13~2.23、更优选为2.13~2.19。上述SSG是作为非熔融加工性的PTFE的分子量的指标的在ASTM D4895-89中规定的SSG。
上述改性PTFE的一次熔点优选为332~348℃。上述一次熔点是对于没有经历过加热到300℃以上的温度的上述改性PTFE设差示扫描量热测定(DSC)的升温速度为10℃/分钟进行测定得到的值。
上述改性PTFE的二次熔点优选为320~329℃。上述二次熔点是对于加热到一次熔点以上的温度(例如360℃)的改性PTFE设差示扫描量热测定(DSC)的升温速度为10℃/分钟进行测定得到的值。
作为上述改性单体,只要能够与TFE共聚就没有特别限定,可以举出例如:六氟丙烯[HFP]等全氟烯烃;三氟氯乙烯[CTFE]等氟氯烯烃;三氟乙烯、偏二氟乙烯[VDF]等含氢氟代烯烃;全氟乙烯基醚;全氟烷基乙烯:乙烯等。另外,所使用的改性单体可以为1种,也可以为两种以上。
作为上述全氟乙烯基醚没有特别限定,可以举出例如下述通式(1)
CF2=CF-ORf (1)
(式中,Rf表示全氟有机基团)所表示的全氟不饱和化合物等。在本说明书中,上述“全氟有机基团”是指与碳原子结合的氢原子全部被氟原子取代而成的有机基团。上述全氟有机基团可以不具有醚氧。
作为上述全氟乙烯基醚,可以举出例如上述通式(1)中的Rf表示碳原子数为1~10的氟代烷基的全氟(烷基乙烯基醚)[PAVE]。上述氟代烷基的碳原子数优选为1~5。
作为上述PAVE中的氟代烷基,可以举出例如全氟甲基、全氟乙基、全氟丙基、全氟丁基、全氟戊基、全氟己基等,优选氟代烷基为全氟丙基的全氟(丙基乙烯基醚)[PPVE]。
作为上述全氟乙烯基醚,进一步可以举出下述化合物:上述通式(1)中的Rf是碳原子数为4~9的全氟(烷氧基烷基)的化合物;Rf是下式:
[化1]
(式中,m表示0或1~4的整数)所表示的基团的化合物;Rf是下式:
[化2]
(式中,n表示1~4的整数)所表示的基团的化合物;等等。
作为全氟烷基乙烯没有特别限定,可以举出例如(全氟丁基)乙烯(PFBE)、(全氟己基)乙烯等。
作为上述改性PTFE中的改性单体,优选为选自由HFP、CTFE、VDF、PAVE、PFBE和乙烯组成的组中的至少一种。更优选为PAVE,进一步优选为PPVE。
本发明的制造方法进一步包括在270~310℃对上述成型品照射30kGy以上且小于70kGy的放射线来得到改性成型品的工序。
本发明人发现,即使上述放射线的照射温度小于上述改性PTFE的二次熔点,也可得到改性效果。该温度小于270℃时,上述成型品的劣化进展、变脆,机械强度不充分。另外,该温度超过310℃时,接近熔点,具有上述成型品发生变形的问题。上述照射温度优选为280℃以上、优选为300℃以下。
对上述照射温度的调整没有特别限定,可以利用公知的方法进行。具体地说,可以举出将上述改性PTFE保持在维持规定温度的加热炉内的方法、载置于加热板上并对内置在加热板中的加热器通电或利用外部加热手段对加热板进行加热等方法。
上述放射线的辐射剂量优选为60kGy以下,优选为40kGy以上。
本发明的制造方法的特征还在于采用比较低温且比较低剂量的照射条件。因此,即使照射放射线,也几乎不会对上述成型品带来损害,上述成型品的尺寸也几乎不会变化。因此,上述成型品即使为隔膜等具有复杂且微细的形状的成型品,也不会破坏其形状及损害其机械物性。
另外,本发明的制造方法中,利用上述特征,即使在厚度小的成型品或具有复杂且微细的形状的成型品中也能够使用。在照射放射线时,聚合物的主链被切断、或聚合物彼此交联。现有的照射条件中,照射温度高,优先进行聚合物彼此的交联,因而即使照射高剂量的放射线,聚合物主链的切断所带来的影响也很小。但是,高照射温度容易使成型品的尺寸发生变化,在厚度特别小的成型品或具有复杂且微细的形状的成型品中难以采用该高照射温度。另一方面,若采用低照射温度,则不仅不容易通过照射得到改性效果,而且聚合物主链的切断所带来的影响增大,所得到的成型品可能会变脆。本发明人进行了深入研究,结果发现,通过如上所述使照射温度和辐射剂量处于极为有限的范围,即使在成型品具有很小的厚度的情况下、具有复杂且微细的形状的情况下,也能够制造出不容易产生粉粒的改性成型品。
上述成型品的厚度可以为3.0mm以下、可以为2.5mm以下、可以为2.0mm以下、可以为1.5mm以下、可以为1.0mm以下。对厚度的下限没有特别限定,考虑到耐挠曲性,下限可以为0.1mm。
也可以仅对上述成型品的一部分照射上述放射线。在上述成型品具有隔膜的形状的情况下,可以仅对与阀座接触的部分照射放射线。
作为放射线,可以举出电子射线、紫外线、γ射线、X射线、中子射线或高能离子等。其中,从透过力优异、剂量率高、适于工业生产的方面出发,优选电子射线。
作为照射放射线的方法没有特别限定,可以举出使用现有公知的放射线照射装置来进行的方法等。
作为放射线的照射环境没有特别限制,优选氧浓度为1000ppm以下,更优选为氧不存在下,进一步优选为真空中或者氮、氦或氩等惰性气体气氛中。
作为上述改性成型品的原料的改性PTFE的MIT值优选为700万次以上、更优选为1000万次以上。
上述MIT值可以依据ASTM D2176进行测定。具体地说,准备宽12.5mm、长130mm、厚0.25mm的试验片,安装于MIT试验机(型号12176、安田精机制作所社制造),在负荷1.25kg、左右弯折角度各135度、弯折次数175次/分钟的条件下弯曲试验片,该MIT值为直至试验片断裂为止的次数。
本发明的制造方法在得到上述改性成型品后还可以进一步包括通过机械加工将上述改性成型品加工成所期望的形状的工序。关于上述机械加工如上文所述。但是,由于本发明的制造方法中的照射条件也能够适用于厚度小的成型品和具有复杂且微细的形状的成型品,因而在照射放射线之前通过机械加工将上述成型品加工成所期望的形状更加方便。
通过上述的制造方法能够得到改性成型品。由上述的制造方法得到的改性成型品不容易产生粉粒,因而是有用的。上述改性成型品可以为隔膜。
本发明还涉及一种成型品,其是改性PTFE的成型品,其特征在于,上述改性PTFE包含TFE单元、基于能够与TFE共聚的改性单体的改性单体单元以及叔碳,上述叔碳相对于TFE单元和上述改性单体单元的合计为0.035~0.100摩尔%。由于上述成型品由包含特定量的上述叔碳的上述改性PTFE构成,因而不容易产生粉粒、具有良好的机械物性。
上述叔碳的含量可以如下计算出:对于上述成型品进行19F-NMR测定,求出下述A~C的峰强度(峰的积分值),按照下述计算式计算出叔碳的含量。
19F-NMR测定条件
测定装置:固体19F-NMR测定装置、BRUKER公司制造
测定条件:282MHz(设改性PTFE的CF2为-120ppm)
转速30kHz
峰强度A
为在化学位移-80(-74~-85)ppm观测到的峰也即来自作为改性单体的全氟烷基乙烯基醚(PAVE)的-O-CF* 2-和-CF* 3的5个C-F*的峰的强度
峰强度B
为在化学位移-120(-84~-150)ppm观测到的峰也即PAVE的5个C-F*和来自四氟乙烯(TFE)的4个C-F*重叠的峰的强度
峰强度C
为在化学位移-183(-178~-191)ppm观测到的峰也即来自叔碳-CF2CF*(-CF2-)CF2-的F*的峰的强度
计算式
叔碳的含量(摩尔%)=100×(峰强度C)÷{(峰强度A÷5)+[峰强度B-峰强度A]÷4+(峰强度C)}
在改性单体为PAVE以外的单体的情况下,也可以通过19F-NMR测定求出叔碳的含量。
包含上述叔碳的上述改性PTFE除了包含上述叔碳以外,可以与上述改性成型品的制造方法中使用的上述改性PTFE具有相同构成。
包含上述叔碳的上述改性PTFE可以通过在270~310℃对上述改性PTFE照射30kGy以上且小于70kGy的放射线来制造。即,包含上述叔碳的上述改性PTFE的上述成型品为上述的改性成型品,这也是本发明的优选方式之一。上述照射温度优选为280℃以上,优选为300℃以下。上述放射线的辐射剂量优选为60kGy以下,优选为40kGy以上。
由包含上述叔碳的上述改性PTFE构成的上述成型品的厚度可以为3.0mm以下、可以为2.5mm以下、可以为2.0mm以下、可以为1.5mm以下、可以为1.0mm以下。对厚度的下限没有特别限定,考虑到耐挠曲性,该下限可以为0.1mm。
本发明还涉及一种隔膜,其特征在于,其由上述成型品形成。由于上述隔膜由包含特定量的上述叔碳的上述改性PTFE构成,因而即使与半导体工厂所使用的腐蚀性高的化学药品等接触也不容易劣化,即使与阀座反复抵接也不容易产生粉粒。
本发明还涉及一种隔膜,其特征在于,其是在270~310℃对上述改性PTFE照射30kGy以上且小于70kGy的放射线而得到的。放射线照射前的上述改性PTFE与上述的改性成型品的制造方法中使用的上述改性PTFE具有相同构成。由于上述隔膜由在270~310℃照射了30kGy以上且小于70kGy的放射线的上述改性PTFE构成,因而具有良好的机械物性,即使与半导体工厂所使用的腐蚀性高的化学药品等接触也不容易劣化,即使与阀座反复抵接也不容易产生粉粒。
上述隔膜只要为仅对一部分照射上述放射线而得到的隔膜即可,并不限于对整体照射上述放射线而得到的隔膜。
上述照射温度优选为280℃以上,优选为300℃以下。
上述放射线的辐射剂量优选为60kGy以下,优选为40kGy以上。
上述隔膜的厚度可以为3.0mm以下、可以为2.5mm以下、可以为2.0mm以下、可以为1.5mm以下、可以为1.0mm以下。对厚度的下限没有特别限定,考虑到耐挠曲性,该下限可以为0.1mm。上述隔膜的厚度可以为上述隔膜的最薄部分的厚度。
上述隔膜的熔点优选为320~329℃。上述熔点为对于上述隔膜设差示扫描量热测定(DSC)的升温速度为10℃/分钟进行测定而得到的值。
本发明还涉及一种隔膜阀,其特征在于,其具备阀座和上述的隔膜。上述隔膜阀由于具有上述特征,因而能够用于在半导体制造中使用的腐蚀性高的化学药品等的供给,即使长期使用也不容易产生粉粒。上述隔膜阀优选具备设于阀主体的阀座、以及与上述阀座抵接或分开的上述隔膜。
图1是本发明的隔膜和隔膜阀的一个实施方式的截面示意图。图1所示的隔膜阀10处于闭阀状态。如图1所示,气缸14与主体(阀主体)13连接。另外,隔膜阀10具备隔膜11,隔膜11通过周边部被夹入主体13与气缸14之间而进行固定。另外,活塞杆15与隔膜11连接,通过活塞杆15上下运动,隔膜11也上下运动。
阀座16被设于主体13,通过使隔膜11与阀座16抵接,流入的流体被截断;通过使隔膜11与阀座16分开,流体进行供给。这样,隔膜阀10通过使隔膜11相对于阀座16抵接、分开来进行流体的流量的控制。并且,由于隔膜11为具备上述构成的隔膜,因而即使反复进行抵接和分开,也不容易产生粉粒。
与阀座16一体形成的主体13可以由金属、树脂等构成。作为上述树脂,可以举出PTFE、四氟乙烯/全氟烷基乙烯基醚共聚物(PFA)、聚苯硫醚(PPS)等。这些之中,出于成型容易、耐化学药品性也优异的原因,优选PFA。本发明的隔膜即使与由PFA构成的阀座反复抵接和分开,也不容易产生粉粒。上述PFA优选具有熔融加工性。
实施例
接着举出实验例对本发明进行说明,但本发明并不仅限于该实验例。
实验例的各数值通过以下的方法测定。
(改性PTFE的二次熔点)
求出使用差示扫描量热计[DSC]以10℃/分钟的速度升温时的熔解热曲线中的极大值所对应的温度作为该二次熔点。
(改性单体单元的含量)
通过红外分光分析法由特性吸收(在全氟(丙基乙烯基醚)(PPVE)的情况下为1040cm-1~890cm-1之间)求出该含量。
(MIT值)
依据ASTM D2176进行测定。具体地说,准备宽12.5mm、长130mm、厚0.25mm的电子射线未照射的试验片,安装于MIT试验机(型号12176、安田精机制作所社制造),在负荷1.25kg、左右弯折角度各135度、弯折次数175次/分钟的条件下弯曲试验片,测定直至试验片断裂为止的次数(MIT值)。
实验例1
使用与日本专利第3177983号公报所记载的实施例1同样地得到的改性PTFE粉末(包含相对于TFE单元和PPVE单元的合计为0.06质量%的PPVE单元,二次熔点为323℃)。将200g的上述粉末填充在50mmφ、高50mm的模具中,以15MPa的压力按压(両押),进行30分钟压力保持,得到预成型品。将该预成型品以升温速度90℃/小时升温后,在360℃保持4小时,以40℃/小时降温,得到成型品块。对该块进行切削加工,制作0.5mm厚的片和0.25mm厚的片。另外,由0.25mm厚度的片测定的MIT值的结果为1500万次。
将0.5mm厚的片切割成宽30mm、长220mm,得到试验片。
将所得到的试验片收纳在电子射线照射装置(NHV Corporation Co.制造)的电子射线照射容器中,之后加入氮气,使容器内为氮气气氛。将容器内的温度升温至280℃,温度稳定后,在电子射线加速电压为3000kV、辐射剂量的强度为20kGy/5min的条件下对试验片照射40kGy的电子射线。电子射线照射前后的试验片的尺寸变化为1%以下,未发生褶皱。
其他实验例
除了采用表1和表2所示的照射温度和照射量以外,与实验例1同样地得到了0.5mm厚的片。
(粉粒产生试验)
使用0.5mm厚的片实施试验。使用染色摩擦坚牢度试验机(安田精机制作所社制造),如图2所示,在片21上设置被固定于摩擦子22的前端的PFA片23,使两者相互往复摩擦。设负荷为500g、次数为2000次(30次/分钟)。将PFA片从摩擦子拆下,测定附着于PFA片的析出物(粉)的量。将结果列于表1和表2。
需要说明的是,在实验例5和实验例8中,在试验中样品发生破裂,因而中断试验。由实验例5和实验例8的结果可知,若放射线的照射量过大,则隔膜得不到通常被认为必要的机械物性。
(析出物的分析)
通过下述方法确定在实验例2中得到的PFA片上附着的析出物的成分。将附着有析出物的PFA片载置在热台上,加热至作为PFA的熔点的305℃以上且小于作为改性PTFE的熔点的323℃,利用偏光显微镜(奥林巴斯公司制造BX51)进行观察,结果发生了PFA片的熔融,但析出物未发生熔融。进一步加热至改性PTFE的熔点以上时,析出物发生了熔融。因此可知,附着于PFA片的析出物为改性PTFE的析出物。
(叔碳的含量)
通过对0.5mm厚的片进行19F-NMR测定而求出该含量。计算出方法如上所述。
[表1]
[表2]
实验例6 | 实验例7 | 实验例8 | |
照射温度(℃) | 300 | 300 | 300 |
照射量(kGy) | 40 | 60 | 100 |
叔碳量(摩尔%) | 0.088 | 0.096 | 0.110 |
析出物的量(g) | 0.0002 | 0.0001 | 无法测定 |
符号说明
10 隔膜阀
11 隔膜
13 主体
14 气缸
15 活塞杆
16 阀座
21 片(样品)
22 摩擦子
23 PFA片
Claims (11)
1.一种改性成型品的制造方法,其特征在于,其包括下述工序:
将改性聚四氟乙烯成型来得到成型品的工序,该改性聚四氟乙烯包含四氟乙烯单元和基于能够与四氟乙烯共聚的改性单体的改性单体单元;以及
在280℃~310℃对所述成型品照射30kGy以上且小于70kGy的放射线来得到改性成型品的工序;
所述改性聚四氟乙烯具有非熔融加工性,ASTM D4895-89中规定的标准比重为2.13~2.23。
2.如权利要求1所述的制造方法,其中,所述改性聚四氟乙烯中,所述改性单体单元相对于四氟乙烯单元和所述改性单体单元的合计为0.001质量%~1质量%。
3.如权利要求1或2所述的制造方法,其中,所述改性聚四氟乙烯的二次熔点为320℃~329℃。
4.如权利要求1或2所述的制造方法,其中,在得到所述成型品后,该制造方法进一步包括通过机械加工对所述成型品进行加工的工序。
5.如权利要求1或2所述的制造方法,其中,在得到所述改性成型品后,该制造方法进一步包括通过机械加工对所述改性成型品进行加工的工序。
6.如权利要求1或2所述的制造方法,其中,所述改性成型品为隔膜。
7.一种成型品,其是改性聚四氟乙烯的成型品,其特征在于,
所述改性聚四氟乙烯具有非熔融加工性,ASTM D4895-89中规定的标准比重为2.13~2.23,
所述改性聚四氟乙烯包含四氟乙烯单元、基于能够与四氟乙烯共聚的改性单体的改性单体单元以及叔碳,
所述叔碳相对于四氟乙烯单元和所述改性单体单元的合计为0.035摩尔%~0.100摩尔%。
8.如权利要求7所述的成型品,其中,所述改性聚四氟乙烯中,所述改性单体单元相对于四氟乙烯单元和所述改性单体单元的合计为0.001质量%~1质量%。
9.一种隔膜,其特征在于,其由权利要求7或8所述的成型品形成。
10.一种隔膜阀,其特征在于,其具备阀座以及权利要求9所述的隔膜。
11.如权利要求10所述的隔膜阀,其中,所述阀座由四氟乙烯/全氟烷基乙烯基醚共聚物构成。
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