CN109638137A - Flip LED chips and down straight aphototropism mode set - Google Patents
Flip LED chips and down straight aphototropism mode set Download PDFInfo
- Publication number
- CN109638137A CN109638137A CN201811320537.0A CN201811320537A CN109638137A CN 109638137 A CN109638137 A CN 109638137A CN 201811320537 A CN201811320537 A CN 201811320537A CN 109638137 A CN109638137 A CN 109638137A
- Authority
- CN
- China
- Prior art keywords
- substrate
- flip led
- led chip
- layer
- epitaxial wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005142 aphototropism Effects 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000009194 climbing Effects 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 9
- 239000000843 powder Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- SXHLTVKPNQVZGL-UHFFFAOYSA-N 1,2-dichloro-3-(3-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C(=C(Cl)C=CC=2)Cl)=C1 SXHLTVKPNQVZGL-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A kind of flip LED chips and down straight aphototropism mode set, including substrate, epitaxial wafer, the first reflecting layer and phosphor powder layer；First substrate includes the first surface and second surface being oppositely arranged, the epitaxial wafer is formed in the first surface of the substrate, electrode is provided on the epitaxial wafer, first reflecting layer is formed in the second surface of the substrate, the phosphor powder layer is formed on first reflecting layer, wherein, first reflecting layer is in slope climbing type structure from its central point to two sides close to a side surface of the substrate.By the way that one layer of reflecting layer is arranged on a sapphire substrate, it is capable of increasing the light-emitting angle of LED, so that LED chip may be directly applied in down straight aphototropism mode set, no longer needing to collocation optical lens to reduce processing procedure process reduces manufacturing cost.
Description
Technical Field
The invention relates to the technical field of display, in particular to a flip LED chip and a direct type backlight module.
Background
With the continuous development of chip technology, flip LED chips have attracted extensive attention from various LED manufacturers due to their advantages of superior heat dissipation, high light emitting efficiency, high stability, and high brightness.
The luminous light type of general flip-chip LED chip is approximate lambert type, and the light that LED sent mainly concentrates on the front view visual angle, and after the angle increased certain degree, the light of this angle reduced relatively, and LED's light spatial distribution leads to when LED is applied to the straight following formula backlight unit among the liquid crystal display panel in the limited angle, can appear the inhomogeneous phenomenon of picture light and shade. To improve this phenomenon, the flip-chip LED chip needs to be matched with a secondary optical lens to increase its light emitting angle, so as to meet the requirement of picture quality.
However, the requirement for the alignment accuracy between the LED and the secondary optical lens is high, which results in high requirement for the patch accuracy of the secondary optical lens, and the matching of the secondary optical lens not only increases the thickness of the backlight module, but also increases the manufacturing cost.
Disclosure of Invention
The invention provides a flip LED chip, which aims to solve the technical problem that when the existing flip LED chip is applied to a backlight module in a liquid crystal display panel, the brightness of a picture of the panel is uneven due to limited light-emitting angle space, and the display effect is further influenced.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention provides a flip LED chip, comprising: the device comprises a substrate, an epitaxial wafer, a first reflecting layer and a fluorescent powder layer; the first substrate comprises a first surface and a second surface which are oppositely arranged, the epitaxial wafer is formed on the first surface of the substrate, an electrode is arranged on the epitaxial wafer, the first reflecting layer is formed on the second surface of the substrate, the fluorescent powder layer is formed on the first reflecting layer, and the surface of one side, close to the substrate, of the first reflecting layer is of a climbing structure from the center point to the two sides of the first reflecting layer.
In at least one embodiment of the present invention, a side surface of the first reflective layer adjacent to the substrate has a convex conical structure.
In at least one embodiment of the present invention, the phosphor layer covers the epitaxial wafer and the reflective layer.
In at least one embodiment of the present invention, the flip LED chip further includes a package support, and the package support is fixedly connected to the electrode on the epitaxial wafer.
In at least one embodiment of the present invention, the package support has a second reflective layer disposed on an upper surface thereof.
In at least one embodiment of the invention, the package support is disposed parallel to the substrate.
In at least one embodiment of the present invention, transparent retaining walls are disposed around the package support.
In at least one embodiment of the present invention, the package support and the transparent wall around the package support form a containing cavity for containing the phosphor layer.
In at least one embodiment of the present invention, the first reflective layer is made of a silver material.
The invention also provides a direct type backlight module which comprises a PCB, a diffusion plate, a diffusion sheet, a brightness enhancement sheet and the inverted LED chips, wherein the inverted LED chips are distributed on the PCB at equal intervals.
The invention has the beneficial effects that: according to the flip LED chip provided by the invention, the reflection layer is arranged on the sapphire substrate, so that the light-emitting angle of the LED can be increased, the LED chip can be directly applied to a direct type backlight module, and an optical lens is not needed to be matched, so that the manufacturing procedures are reduced, and the manufacturing cost is reduced.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a flip LED chip according to the present invention;
FIG. 2 is a schematic diagram of a first reflective layer of the flip-chip LED chip of the present invention;
FIG. 3 is another schematic diagram of a flip-chip LED chip according to the present invention;
FIG. 4 is a schematic diagram of the light emitted from a flip-chip LED chip according to the present invention;
FIG. 5 is a schematic view of a direct-type backlight module according to the present invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
The invention aims at the technical problems that when the existing flip LED chip is applied to a backlight module in a liquid crystal display panel, the brightness of a picture of the panel is uneven due to limited light-emitting angle space, and the display effect is further influenced.
As shown in fig. 1, the present invention provides a flip-chip LED chip 10, comprising: substrate 11, first reflection layer 12, epitaxial wafer 13, phosphor layer 16, packaging support 15.
As shown in fig. 3, the substrate 11 is a sapphire substrate, the substrate 11 includes a first surface 111 and a second surface 112 that are oppositely disposed, the first surface 111 is a lower surface, the second surface 112 is an upper surface, the epitaxial wafer 13 is formed on the first surface 111 of the substrate 11, and the first reflective layer 12 is formed on the second surface 112 of the substrate 11.
The epitaxial wafer 13 is provided with an electrode, the packaging support 11 is connected with the electrode, and specifically, the positive electrode and the negative electrode on the epitaxial wafer 13 are welded with the corresponding positive electrode pin and the negative electrode pin on the packaging support 11.
The phosphor layer 16 is formed on the first reflective layer 12, and the phosphor layer 16 covers the epitaxial wafer 13, the substrate 11, and the exposed outer surface of the first reflective layer 12.
As shown in fig. 2, a side surface of the first reflective layer 12 close to the substrate 11 (i.e., a lower surface of the first reflective layer 12) is in a climbing structure along a central point thereof to two sides, and by adopting the slope design, light emitted from the PN junction on the epitaxial wafer 13 is reflected by the first reflective layer 12 and then emitted from a side of the epitaxial wafer 13, so that the light brightness directly above the chip is reduced and the distribution angle of light emission is increased.
In this embodiment, the lower surface of the first reflective layer 12 has an outward convex conical structure, the second surface 112 of the substrate 11 has an inward convex conical structure corresponding to the structure of the first reflective layer 12, and the substrate 11 can be patterned by a patterning process so that the second surface 112 is patterned.
Encapsulation support 15 is on a parallel with substrate 11 sets up, encapsulation support 15 is provided with transparent barricade 17 all around, transparent barricade 17 with encapsulation support 15 is perpendicular, encapsulation support 15 with transparent barricade 17 forms one and holds the cavity, holds phosphor layer 16, transparent barricade 17 can make light see through, and the angle of light-emitting of increase LED chip plays the effect of replacing secondary optical lens.
Further, a second reflection layer 18 is arranged on the package support 15, the second reflection layer covers the exposed upper surface (inner surface) of the package support except the exposed upper surface connected with the epitaxial wafer 13, and when light irradiates the package support 15, the second reflection layer 18 reflects the light back, so that the light emitting efficiency of the LED chip is improved.
The epitaxial wafer 13 may be prepared by MOCVD (Metal Organic Chemical Vapor Deposition) technology, and is formed by growing a gallium nitride structure film layer on the substrate 11.
The fluorescent powder layer 16 is prepared by using fluorescent powder and silica gel in a specific ratio, and the fluorescent powder layer 16 is formed by coating a fluorescent powder layer material on the surface of the first reflecting layer 12.
The first reflective layer 12 may be made of a silver material on the upper surface of the substrate 11 to form a silver mirror.
To protect the LED chips, a transparent cover plate may be disposed over the phosphor layer 16.
And after the epitaxial wafer 13 is packaged on the packaging support 15, the transparent plastic packaging adhesive around the packaging support 15 is used as the transparent retaining wall 17.
As shown in fig. 4, after light emitted from the PN junction on the epitaxial wafer 13 is reflected by the lower surface on the first reflective layer 12, the light is emitted from the side of the substrate 11 or the epitaxial wafer 13, and after the phosphor in the phosphor layer 16 is excited, a part of the light is emitted from the phosphor layer 16 above, and another part of the light is emitted from the retaining wall 17 at the side, which can reduce the luminance brightness right above the chip, and increase the distribution angle of the light, thereby avoiding the mura (uneven brightness) phenomenon occurring on the picture when the LED chip is applied to the direct-type backlight module, and increasing the light emitting angle without adding a secondary optical lens, reducing the manufacturing process, and further reducing the cost of the backlight module.
As shown in fig. 5, the present invention further provides a direct type backlight module including the flip LED chip. The direct type backlight module further comprises: the diffusion plate 30, the diffusion sheet 40, and the brightness enhancement sheet 50 are sequentially stacked on the optical film layers above the flip-chip LED chip 10, which is the prior art, and reference can be made to the prior art, and details are not repeated here.
The direct type backlight module further comprises a PCB (printed circuit board) 20, the flip LED chips 10 are distributed on the PCB 20 at equal intervals, the PCB 20 and the flip LED chips 10 form a light bar together to provide a light source for the backlight module, and the number and the set intervals of the flip LED chips are determined according to the luminous intensity and the luminous angle of the flip LED chips.
Has the advantages that: according to the flip LED chip provided by the invention, the reflection layer is arranged on the sapphire substrate, so that the light-emitting angle of the LED can be increased, the LED chip can be directly applied to a direct type backlight module, and an optical lens is not needed to be matched, so that the manufacturing procedures are reduced, and the manufacturing cost is reduced.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (10)
1. A flip LED chip, comprising:
a substrate comprising opposing first and second surfaces;
the epitaxial wafer is formed on the first surface of the substrate, and an electrode is arranged on the epitaxial wafer;
the first reflecting layer is formed on the second surface of the substrate;
a phosphor layer formed on the first reflective layer; wherein,
the first reflecting layer is in a climbing structure from the center point to two sides of the surface of one side close to the substrate.
2. The flip LED chip of claim 1, wherein a side surface of the first reflective layer adjacent to the substrate has a convex conical configuration.
3. The flip LED chip of claim 1, wherein the phosphor layer encapsulates the epitaxial wafer and the first reflective layer.
4. The flip LED chip of claim 1, further comprising a package support, wherein the package support is fixedly attached to the electrode on the epitaxial wafer.
5. The flip LED chip of claim 4, wherein the package support upper surface is provided with a second reflective layer.
6. The flip LED chip of claim 4, wherein the package support is disposed parallel to the substrate.
7. The flip LED chip of claim 6, wherein the package support is surrounded by transparent barriers.
8. The flip LED chip of claim 7, wherein the package support and the transparent wall around the package support form a cavity for accommodating the phosphor layer.
9. The flip LED chip of claim 1, wherein the first reflective layer is made of a silver material.
10. A direct type backlight module, comprising a PCB, a diffuser, a brightness enhancement sheet, and the above-mentioned flip LED chips of any of claims 1 to 9, wherein the flip LED chips are distributed on the PCB at equal intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811320537.0A CN109638137A (en) | 2018-11-07 | 2018-11-07 | Flip LED chips and down straight aphototropism mode set |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811320537.0A CN109638137A (en) | 2018-11-07 | 2018-11-07 | Flip LED chips and down straight aphototropism mode set |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109638137A true CN109638137A (en) | 2019-04-16 |
Family
ID=66067453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811320537.0A Pending CN109638137A (en) | 2018-11-07 | 2018-11-07 | Flip LED chips and down straight aphototropism mode set |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109638137A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112186090A (en) * | 2020-08-31 | 2021-01-05 | 深圳市聚飞光电股份有限公司 | LED packaging body, packaging method and light-emitting device |
| CN113299813A (en) * | 2021-05-13 | 2021-08-24 | Tcl华星光电技术有限公司 | LED packaging structure, LED packaging structure manufacturing method and display module |
| CN113871522A (en) * | 2021-12-02 | 2021-12-31 | 江西省兆驰光电有限公司 | Lamp bead module, backlight module and electronic equipment |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009032958A (en) * | 2007-07-27 | 2009-02-12 | Kyocera Corp | Light-emitting element and illuminator |
| CN101577300A (en) * | 2008-05-08 | 2009-11-11 | 先进开发光电股份有限公司 | Light-emitting diode (LED) and packaging method thereof |
| CN102509761A (en) * | 2012-01-04 | 2012-06-20 | 日月光半导体制造股份有限公司 | Chip package |
| TW201431136A (en) * | 2013-01-09 | 2014-08-01 | Koninkl Philips Nv | Shaped cavity in substrate of a chip scale package LED |
| CN104885235A (en) * | 2013-01-10 | 2015-09-02 | 皇家飞利浦有限公司 | LED with shaped growth substrate for side emission |
| CN204927333U (en) * | 2015-08-19 | 2015-12-30 | 芯亚科技股份有限公司 | Base plate of independent reflection cup |
| CN105684174A (en) * | 2013-11-07 | 2016-06-15 | 皇家飞利浦有限公司 | Substrate for LED with total-internal reflection layer surrounding LED |
| CN207651511U (en) * | 2017-12-22 | 2018-07-24 | 惠州雷通光电器件有限公司 | Flip LED chips and backlight module |
-
2018
- 2018-11-07 CN CN201811320537.0A patent/CN109638137A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009032958A (en) * | 2007-07-27 | 2009-02-12 | Kyocera Corp | Light-emitting element and illuminator |
| CN101577300A (en) * | 2008-05-08 | 2009-11-11 | 先进开发光电股份有限公司 | Light-emitting diode (LED) and packaging method thereof |
| CN102509761A (en) * | 2012-01-04 | 2012-06-20 | 日月光半导体制造股份有限公司 | Chip package |
| TW201431136A (en) * | 2013-01-09 | 2014-08-01 | Koninkl Philips Nv | Shaped cavity in substrate of a chip scale package LED |
| CN104885235A (en) * | 2013-01-10 | 2015-09-02 | 皇家飞利浦有限公司 | LED with shaped growth substrate for side emission |
| CN105684174A (en) * | 2013-11-07 | 2016-06-15 | 皇家飞利浦有限公司 | Substrate for LED with total-internal reflection layer surrounding LED |
| CN204927333U (en) * | 2015-08-19 | 2015-12-30 | 芯亚科技股份有限公司 | Base plate of independent reflection cup |
| CN207651511U (en) * | 2017-12-22 | 2018-07-24 | 惠州雷通光电器件有限公司 | Flip LED chips and backlight module |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112186090A (en) * | 2020-08-31 | 2021-01-05 | 深圳市聚飞光电股份有限公司 | LED packaging body, packaging method and light-emitting device |
| CN113299813A (en) * | 2021-05-13 | 2021-08-24 | Tcl华星光电技术有限公司 | LED packaging structure, LED packaging structure manufacturing method and display module |
| CN113299813B (en) * | 2021-05-13 | 2022-11-08 | Tcl华星光电技术有限公司 | LED packaging structure, LED packaging structure manufacturing method and display module |
| CN113871522A (en) * | 2021-12-02 | 2021-12-31 | 江西省兆驰光电有限公司 | Lamp bead module, backlight module and electronic equipment |
| CN113871522B (en) * | 2021-12-02 | 2022-03-22 | 江西省兆驰光电有限公司 | Lamp bead module, backlight module and electronic equipment |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190416 |
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| RJ01 | Rejection of invention patent application after publication |