CN207651511U - Flip LED chips and backlight module - Google Patents
Flip LED chips and backlight module Download PDFInfo
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- CN207651511U CN207651511U CN201721841367.1U CN201721841367U CN207651511U CN 207651511 U CN207651511 U CN 207651511U CN 201721841367 U CN201721841367 U CN 201721841367U CN 207651511 U CN207651511 U CN 207651511U
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Abstract
The utility model is related to a kind of flip LED chips and backlight modules.The flip LED chips include：Substrate, the first reflecting layer for being deposited on substrate bottom, the n type semiconductor layer for being deposited on the first reflecting layer lower surface, the interior active layer for being deposited on n type semiconductor layer lower surface, the p type semiconductor layer for being deposited on interior active layer lower surface, the ohmic contact layer for being deposited on p type semiconductor layer lower surface, the second reflecting layer for being deposited on ohmic contact layer lower surface, and be arranged and obtain P electrode and N electrode in the second reflecting layer lower surface；Multiple protrusions for reflection light and multiple through-holes for direct line are provided on first reflecting layer.Flip LED chips and backlight module provided by the utility model, it utilizes the protrusion and through-hole on the first reflecting layer, so that side and the top surface uniformly light-emitting of the flip LED chips, thus can be with uniform mixed light, to substantially improve the illumination effect of straight-down negative module between chip when above-mentioned flip LED chips are applied in straight-down negative module.
Description
Technical field
The utility model is related to chip fields, more particularly to a kind of flip LED chips and backlight module.
Background technology
With the continuous development of chip technology, flip LED chips are due to its superior heat dissipation characteristics, higher luminous efficiency
And the advantages that its low-voltage, high brightness, it is increasingly becoming the volume production target that current major LED manufacturers are pursued increasingly.
Shown in Figure 1 in traditional technology, the structure that flip LED chips use is followed successively by from top to bottom：Sapphire Substrate
101, N-GaN layers 102, interior active layer 103, P-GaN layers 104, ITO ohmic contact layers 105, reflecting layer 106, p-type welding electrode 107
With N-type welding electrode 108.Wherein, reflection of the light through reflecting layer 106 that interior active layer 103 is sent out downwards, is penetrated at the top of chip
Go out, so that the brightness of flip LED chips concentrates on the top of chip.
But when traditional flip LED chips are applied in straight-down negative module, adjacent two in straight-down negative module
Flip LED chips can not uniform mixed light and be difficult to obtain uniform Luminance Distribution, so as to cause the illumination effect of straight-down negative module
It is poor.
Utility model content
Based on this, it is necessary to can not be uniform for two flip LED chips adjacent in straight-down negative module in traditional technology
Mixed light and be difficult to obtain uniform Luminance Distribution problem, a kind of flip LED chips and backlight module are provided.
In a first aspect, the utility model provides a kind of flip LED chips, including：Substrate is deposited on the substrate bottom
First reflecting layer, the n type semiconductor layer for being deposited on first reflecting layer lower surface are deposited on the n type semiconductor layer following table
The interior active layer in face, is deposited on the p type semiconductor layer lower surface at the p type semiconductor layer for being deposited on the interior active layer lower surface
Ohmic contact layer, the second reflecting layer for being deposited on the ohmic contact layer lower surface, and be arranged under second reflecting layer
Surface obtains P electrode and N electrode；
Multiple protrusions for reflection light and multiple through-holes for direct line are provided on first reflecting layer.
The flip LED chips of above-mentioned offer, by the protrusion for reflection light being arranged on the first reflecting layer, in the future
Reflex to the side of flip LED chips again from the light reflected in the second reflecting layer, and by being arranged on the first reflecting layer
Through-hole for direct line so that flip LED can be directed to by the through-hole by coming from the light of the second reflecting layer reflection
The top of chip, so that the top and side of flip LED chips can shine.In this way, when above-mentioned flip LED chips are answered
When in straight-down negative module, four sides and top of adjacent two flip LED chips can shine, adjacent in this way
Two flip LED chips can be by the luminous carry out uniform mixed light of side, to substantially improve shining for straight-down negative module
Effect.On the other hand, the present embodiment is not necessarily to ensure the hair of straight-down negative module by increasing number of chips in straight-down negative module
The cost of straight-down negative module is greatly saved in light effect, in addition, the present embodiment at the top of LED chip without by increasing
Add optical lens to ensure the illumination effect of straight-down negative module, therefore, which further reduces the production cost of straight-down negative module,
And it is blocked up caused poor for applicability to avoid straight-down negative modular volume.
The multiple protrusion is distributed in array in one of the embodiments, is arranged one between two neighboring protrusion
Through-hole.
The cross-sectional shape of the protrusion includes in one of the embodiments,：In triangle, inverted trapezoidal and circle extremely
It is one few.
The cross-sectional shape of the multiple protrusion is identical in one of the embodiments,.
The spacing range between two neighboring protrusion is [6,8] μm, the diameter of the through-hole in one of the embodiments,
Ranging from [3,5] μm.
Second aspect, the utility model provide a kind of backlight module, including：Module bracket, flexible circuit board and multiple
Such as above-described embodiment any one of them flip LED chips；
The p-type welding electrode of the flip LED chips and N-type welding electrode, are electrically connected with the flexible circuit board, described
Flexible circuit board is arranged in the module bracket.
The one side of the direction of the flexible circuit board flip LED chips is coated with anti-in one of the embodiments,
Penetrate ink layer.
The backlight module further includes in one of the embodiments,：Substrate top surface in flip LED chips is set
Diaphragm；
The diaphragm includes：Quantum dot film after atomization process；The quantum dot film is coated in the upside-down mounting
The upper surface of the substrate of LED chip.
The diaphragm further includes in one of the embodiments,：The level in the quantum dot film upper surface is arranged to increase
Mating plate, the vertical brightening piece being arranged on the horizontal brightening piece, be arranged the anti-dazzling screen in the vertical brightening piece upper surface with
And the protective film in the anti-dazzling screen upper surface is set；
The lower surface of the anti-dazzling screen is white, and the upper surface of the anti-dazzling screen is black.
The multiple LED flip chip includes at least two flip LED chips groups in one of the embodiments,；
It is connected in series between flip LED chips in same group, is in parallel connect between any two flip LED chips group
It connects.
Flip LED chips and backlight module provided by the utility model, by the first reflecting layer of flip LED chips
The light for coming from the reflection of the second reflecting layer is reflexed to flip LED chips by the protrusion for reflection light being arranged again
Side, and by the way that the through-hole for direct line is arranged on the first reflecting layer so that come from the light of the second reflecting layer reflection
Line can be directed to the top of flip LED chips by the through-hole, so that the top and side of flip LED chips can be with
It shines.In this way, when above-mentioned flip LED chips are applied in straight-down negative module, four sides of adjacent two flip LED chips
Face and top can shine, adjacent in this way two flip LED chips can by the luminous carry out uniform mixed light of side, from
And substantially improve the illumination effect of straight-down negative module.On the other hand, the present embodiment is not necessarily to by being increased in straight-down negative module
Number of chips ensures the illumination effect of straight-down negative module, the cost of straight-down negative module is greatly saved, in addition, the present embodiment
Ensure the illumination effect of straight-down negative module without by increasing optical lens at the top of LED chip, therefore, further
The production cost of straight-down negative module is reduced, and it is blocked up caused poor for applicability to avoid straight-down negative modular volume.
Description of the drawings
Fig. 1 is flip LED chips structural schematic diagram in traditional technology；
Fig. 2 is the flip LED chips structural schematic diagram that the utility model one embodiment provides；
Fig. 2 a are that the flip LED chips that the utility model another embodiment provides shine schematic diagram；
Fig. 2 b are the through-hole amplification for the first reflecting layer of flip LED chips setting that the utility model another embodiment provides
Schematic diagram；
Fig. 3 is the cross-sectional view of protrusion and through-hole that the utility model another embodiment provides；
Fig. 4 is the cross-sectional view of protrusion and through-hole that the utility model another embodiment provides；
Fig. 5 is the structural schematic diagram for the backlight module that the utility model one embodiment provides；
Fig. 6 is the structural schematic diagram for the backlight module that the utility model another embodiment provides.
Reference sign：
101：Sapphire Substrate； 102：N-GaN layers； 103：Interior active layer；
104：P-GaN layers； 105：ITO ohmic contact layers； 106：Reflecting layer；
107：P-type welding electrode； 108：N-type welding electrode； 201：Substrate；
202：First reflecting layer； 203：N type semiconductor layer； 204：Interior active layer；
205：P type semiconductor layer； 206：Ohmic contact layer； 207：Second reflecting layer；
208：P-type welding electrode； 209：N-type welding electrode； 210:Reflection light；
211：Direct line； 221：Protrusion； 222：Through-hole；
501：Module bracket； 502：Flexible circuit board； 503：Flip LED chips；
531：P-type welding electrode； 532：N-type welding electrode； 521：High reflection ink layer；
504：Quantum dot film； 505：Horizontal brightening piece； 506：Vertical brightening piece；
507：Anti-dazzling screen； 508：Protective film.
Specific implementation mode
With the continuous development of chip technology, flip LED chips are in illumination, automobile, display screen and backlight etc. to brightness
It is required that the effect in high field is increasingly apparent.But the flip LED chips of traditional technology shown in FIG. 1, applied to straight
When in following formula module, in straight-down negative module two adjacent flip LED chips can not uniform mixed light and being difficult to obtain it is uniform bright
Degree distribution, the illumination effect so as to cause straight-down negative module are poor.Flip LED chips provided by the present application, it is intended to solve tradition
The technical problem as above of technology.
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, it by following embodiments and ties
Attached drawing is closed, the technical scheme in the embodiment of the utility model is described in further details.It should be appreciated that tool described herein
Body embodiment only to explain the utility model, is not used to limit the utility model.
Fig. 2 is the structural schematic diagram for the flip LED chips that the utility model one embodiment provides.As shown in Fig. 2, should
LED flip chip includes：Substrate 201, the first reflecting layer 202 for being deposited on 201 bottom of the substrate are deposited on described first instead
Penetrate the n type semiconductor layer 203 of 202 lower surface of layer, the interior active layer 204 for being deposited on 203 lower surface of the n type semiconductor layer, deposition
It is connect in the p type semiconductor layer 205 of 204 lower surface of interior active layer, ohm for being deposited on 205 lower surface of the p type semiconductor layer
Contact layer 206, the second reflecting layer 207 for being deposited on 206 lower surface of the ohmic contact layer, and be arranged in second reflecting layer
207 lower surfaces obtain P electrode 208 and N electrode 209；It is provided on first reflecting layer 202 multiple for reflection light 210
Protrusion 221 and multiple through-holes 222 for direct line 211.
Specifically, in the present embodiment, substrate 201 can be Sapphire Substrate, silicon substrate, silicon carbide substrates.First reflection
Layer 202 can be that the reflecting layer Ag or distributed bragg reflector mirror (Distributed Bragg Reflection, DBR) are anti-
Layer is penetrated, n type semiconductor layer 203 can be N-type GaN layer, and p type semiconductor layer 205 can be p-type GaN layer, ohmic contact layer 206
It can be tin indium oxide (Indium Tin Oxide, ITO) ohmic contact layer, can also be other transparent ohmic contact layers,
Second reflecting layer 207 can be the reflecting layer Ag, the reflecting layer Al or the reflecting layer DBR.Need the embodiment illustrated, above-mentioned each layer
Type specification be only a kind of example.
In the present embodiment, the first reflecting layer 202 can form protrusion 221 and through-hole 222 after patterned surface is roughened, such as
Shown in Fig. 2 b, Fig. 2 b are 222 enlarged diagrams of through-hole that the first reflecting layer of above-mentioned flip LED chips 202 is arranged.Optionally, on
The patterned surface roughening carried out to the first reflecting layer 202 is stated, can be using techniques such as photoetching, dry method (wet method) etchings, in fact
Now to the roughening effect of the periodic regular graphic structure of chip surface.
Optionally, the shape of 221 cross section of protrusion in first reflecting layer 202 can be irregular or regular square
Shape can also be that other irregular or regular shapes, the present embodiment do not limit the cross-sectional shape of protrusion 221
It is fixed, as long as the protrusion 221, which can reflect, comes from the light that above-mentioned second reflecting layer 207 is reflected.Optionally, above-mentioned logical
The shape in hole 222 can be trapezoidal hole, can also be the through-hole of diamond shape, can also be other shapes, the present embodiment is to logical
The shape in hole does not also limit, if its can by the light direct projection for coming from the second reflecting layer 207 or be transmitted through it is above-mentioned fall
Fill the top of LED chip.
Optionally, above-mentioned raised 221 can be with Arbitrary distribution with the position of through-hole 222, such as can be each two protrusion 221
Between one through-hole 222 in interval or every three protrusions 221 be spaced a through-hole 222, the present embodiment is to protrusion 221 and through-hole
The specific distribution of 222 position does not limit.
In conjunction with above-mentioned structure shown in Fig. 2, the reflection signal of light may refer to shown in Fig. 2 a, specially：Interior active layer
204 light sent out reach the first reflecting layer 202, the protrusion on the first reflecting layer 202 after the reflection in the second reflecting layer 207
221 reflex to received light 210 side of flip LED chips so that and the side of flip LED chips can shine,
In addition, the direct line 211 that the second reflecting layer 207 is reflected on the first reflecting layer 202 can be directed to upside-down mounting by through-hole 222
The top of LED chip, so that the top of flip LED chips can also shine.In this way, working as above-mentioned flip LED chips application
When in straight-down negative module, four sides and top of adjacent two flip LED chips can shine, and adjacent in this way two
A flip LED chips can be by the luminous carry out uniform mixed light of side, to substantially improve the luminous effect of straight-down negative module
Fruit.Optionally, the flip LED chips in the present embodiment can be upside-down mounting blue chip.
Flip LED chips provided in this embodiment, by the protrusion for reflection light being arranged on the first reflecting layer,
The light for coming from the reflection of the second reflecting layer is reflexed to the side of flip LED chips again, and by the first reflecting layer
Through-hole for direct line is set so that upside-down mounting can be directed to by the through-hole by coming from the light of the second reflecting layer reflection
The top of LED chip, so that the top and side of flip LED chips can shine.In this way, working as above-mentioned flip LED core
When piece is applied in straight-down negative module, four sides and top of adjacent two flip LED chips can shine, such phase
Two adjacent flip LED chips can be by the luminous carry out uniform mixed light of side, to substantially improve straight-down negative module
Illumination effect.On the other hand, the present embodiment is not necessarily to ensure straight-down negative module by increasing number of chips in straight-down negative module
Illumination effect, the cost of straight-down negative module is greatly saved, in addition, the present embodiment is without by the top of LED chip
Portion increases optical lens to ensure the illumination effect of straight-down negative module, and therefore, which further reduces the productions of straight-down negative module
Cost, and it is blocked up caused poor for applicability to avoid straight-down negative modular volume.
Fig. 3 is the cross-sectional view of protrusion and through-hole that another embodiment of the utility model provides.Shown in above-mentioned Fig. 2
On the basis of embodiment, in the present embodiment, multiple raised 221 on above-mentioned first reflecting layer 202 can be in that array is distributed, phase
A through-hole 222 can be set between adjacent two protrusions 221.Optionally, raised 221 cross-sectional shape includes：Triangle
At least one of shape, inverted trapezoidal and circle.
Specifically, in the present embodiment, on the first reflecting layer 202 two neighboring raised 221 between a through-hole is set
222, optionally, multiple raised 221 cross-sectional shapes on the first reflecting layer 202 may be the same or different, and first is anti-
The shape for penetrating multiple through-holes 222 of layer 202 may be the same or different, and the present embodiment does not limit this, shown in Fig. 3
The shape of protrusion 221 and the shape of through-hole 222 be only a kind of example.
It is each anti-from second from the point of view of light reflection angle when one through-hole 222 is set between two neighboring raised 221
It is by the protrusion 221 on the first reflecting layer 202 that the light for coming from the second reflecting layer 207 is anti-to penetrate the light that layer 207 reflects
It is mapped to the side of flip LED chips, so that the light that four offside reflections of flip LED chips go out is more uniform；Each from
222 direct projection of through-hole or be transmitted through above-mentioned upside-down mounting that the light that second reflecting layer 207 reflects passes through on the first reflecting layer 202
The top of LED chip, so that the brightness of flip LED chips top surface is more uniform.
Flip LED chips provided in this embodiment, by the way that a through-hole is arranged between two protrusions so that multiple protrusions
It is distributed in array, and it is in that array is distributed to make multiple through-holes also.In this way, the light that interior active layer is sent out is by the second reflection
The first reflecting layer can be reached after layer reflection, it can be with by received light in the protrusion of array distribution on the first reflecting layer
The side of flip LED chips is reflexed to, so that four lateral luminances of above-mentioned flip LED chips are more evenly distributed, in addition,
Remaining light that second reflecting layer is reflected on the first reflecting layer by through-hole direct projection or can be projected to flip LED chips
Top, and when multiple through-holes are distributed in array, so that the Luminance Distribution of the top surface of above-mentioned flip LED chips is more equal
It is even.
Fig. 4 is the cross-sectional view of protrusion and through-hole that another embodiment of the utility model provides；Implement as shown in Figure 4
On the basis of example, in the present embodiment, multiple raised 221 cross-sectional shapes on the first reflecting layer 202 are identical.Optionally, phase
Spacing range between adjacent two protrusions 221 is [6,8] μm, ranging from [3,5] μm of the diameter of the through-hole 222.
It should be noted that Fig. 4 only illustrates the protrusion 221 that a kind of cross-sectional shape is triangle, it is certain its can be with
For shapes such as round or inverted trapezoidals.
In the present embodiment, the cross-sectional shape of multiple protrusions on the first reflecting layer is identical, can to come from second
The light in reflecting layer is more uniformly reflected into four sides of flip LED chips, further, when between two neighboring protrusion
Spacing range be [6,8] um when, the light for coming from the second reflecting layer can be made further uniformly to be reflected into upside-down mounting
Four sides of LED chip.In addition, ranging from [3,5] um of the diameter of above-mentioned through-hole, can to come from the second reflection
The direct projection of the uniform light of layer or the top surface for being transmitted through flip LED chips, to be applied to directly by above-mentioned flip LED chips
When in following formula module, straight-down negative module even light mixing can be further improved, and it greatly improves straight-down negative modules
Illumination effect.
Fig. 5 is the structural schematic diagram for the backlight module that the utility model one embodiment provides.As shown in figure 5, the backlight
Module includes：Module bracket 501, flexible circuit board 502 and multiple flip LED chips as described in any of the above-described embodiment
503；The p-type welding electrode 531 of the flip LED chips 503 and N-type welding electrode 532, with 502 electricity of the flexible circuit board
Connection, the flexible circuit board 502 are arranged in the module bracket 501.
Specifically, in the present embodiment, module bracket 501 can be plastic stent frame, can also be that other can carry
The stand frame of flexible circuit board 502 is stated, flexible circuit board 502 can also be other printed wiring board, flip LED chips 503
Can be the flip LED chips of structure shown in any of the above-described embodiment.
In the present embodiment, flexible circuit board 502 can fix or removably be arranged in above-mentioned module bracket 501,
The size of above-mentioned flexible circuit board 502 can be designed according to actual product screen size size, above-mentioned flexible circuit board
502 upper surfaces are provided with circuit and welding electrode, and electricity is welded with the p-type of the more flip LED chips 503 in array distribution
Pole 531 and N-type welding electrode 532 are electrically connected.
Backlight module provided in this embodiment is and more by by the circuit being arranged in flexible circuit board and welding electrode
In array distribution flip LED chips p-type welding electrode and the electrical connection of N-type welding electrode, and by the knot after connection
Structure is arranged in module bracket so that comes from the light of four sides of flip LED chips in above-mentioned flexible circuit board enterprising one
Step reflection, and then the light after being reflected by flexible circuit board comes from the light of flip LED chips top surface between any two with it
Carry out uniform mixed light, meanwhile, between adjacent two flip LED chips can also by the luminous carry out uniform mixed light of side,
To substantially improve the illumination effect of backlight module；In addition, when backlight module is applied to terminal device such as TV or hand
When on machine, since module bracket can close light, when user is in viewing TV or mobile phone screen, it will not leak
The phenomenon of light.
Fig. 6 is the structural schematic diagram for the backlight module that another embodiment of the utility model provides.As shown in fig. 6, above-mentioned
On the basis of embodiment illustrated in fig. 5, in the present embodiment, the direction of above-mentioned flexible circuit board 502 flip LED chips 503
It is coated with reflecting ink layer 521 on one side.
Specifically, above-mentioned reflecting ink layer 521 can be the high reflection ink layer of white, can also be the anti-of other colors
Penetrate ink layer.
In the present embodiment, based on the structure of above-mentioned flip LED chips, the work of top surface and four sides in the first reflecting layer
It can be shone with lower, and in the present embodiment under the action of the reflecting ink layer of flexible circuit board, flip LED chips side
The light reflected will further be reflected on the reflecting ink layer, so that the light after reflection and the upside-down mounting
The light of LED chip top surface can carry out uniform mixed light two-by-two, that is to say, that the setting of reflecting ink layer can make upside-down mounting
Five face mixed lights of LED chip evenly, meanwhile, can also lead between two adjacent flip LED chips in backlight module
The luminous carry out uniform mixed light for crossing side, to substantially improve the illumination effect of backlight module.
Shown in above-mentioned Fig. 6, optionally, above-mentioned backlight module further includes：It is arranged in flip LED chips 503
The diaphragm of substrate top surface；The diaphragm includes：Quantum dot film 504 after atomization process；The quantum dot film 504
The upper surface of substrate coated in the flip LED chips 503.
In the present embodiment, quantum dot film is arranged by the substrate top surface in flip LED chips, in the quantum dot film
Quantum dot under the irradiation of flip LED chips, blue light that the feux rouges of generation and green light are sent out with flip LED chips at
White light, to promote the illumination effect of entire backlight module.In addition, when above-mentioned quantum dot film is after atomization process, the amount
Son point film also has the function of spreading light simultaneously so that the light reflected from flip LED chips can be in quantum dot film table
Face further scatters, to substantially improve the illumination effect of backlight module.
Shown in above-mentioned Fig. 6, optionally, above-mentioned diaphragm further includes：It is arranged in 504 upper table of the quantum dot film
The horizontal brightening piece 505 in face is arranged in the vertical brightening piece 506 of 505 upper surface of horizontal brightening piece, setting described vertical
The anti-dazzling screen 507 of 506 upper surface of brightening piece and protective film 508 in 507 upper surface of the anti-dazzling screen is set；The anti-dazzling screen
507 lower surface is white, and the upper surface of the anti-dazzling screen 507 is black.
Specifically, above-mentioned horizontal brightening piece 505 and vertical brightening piece 506 can also be integrated into one layer of composite membrane.
In the present embodiment, pass through the horizontal brightening piece being arranged on above-mentioned quantum dot film and vertical brightening piece, it is therefore an objective to
The brightness for improving the light reflected from flip LED chips, is mainly used in some high-end products high to brightness requirement.Into
One step, above-mentioned backlight module further includes anti-dazzling screen and protective film, and the upper surface of anti-dazzling screen is that black is used for shield lights, following table
Face is that white is used for further reflection light, to further improve the illumination effect of backlight module.
Shown in above-mentioned Fig. 6, optionally, the multiple LED flip chip 503 includes at least two flip LEDs
Chipset；It is connected in series between flip LED chips 503 in same group, for simultaneously between 503 groups of any two flip LED chips
Connection connection.
Specifically, above-mentioned multiple flip LED chips connection types can also be, the flip LED chips 503 in same group it
Between be connected in parallel, to be connected in series between 503 groups of wantonly one or two of flip LED chips.
In the present embodiment, above-mentioned flip LED chips can individually control some region by multigroup series-parallel system
Brightness, the picture signal that can be provided according to external equipment, according to parameters such as the color gray scales of image, each backlight area can be independent
Be adjusted to most bright or direct closing, thus also provide for it is a kind of can local dimming backlight formed local dimming, it is above-mentioned this
Electricity can be greatly lowered in connection type, improve the gray number for showing picture reduced value and image.
Backlight module provided in this embodiment, by by flexible circuit board towards above-mentioned multiple flip LED chips one
The reflecting ink layer that face Tu covers is strengthened and is further reflected the light for coming from flip LED chips offside reflection, and then passes through
Light after flexible circuit board reflection comes from the light of flip LED chips top surface with it and carries out uniform mixed light between any two, together
When, it can also be by the luminous carry out uniform mixed light of side, to substantially improve the back of the body between adjacent two flip LED chips
The illumination effect of optical mode group；In addition, using the quantum dot film being arranged in the substrate top surface of above-mentioned flip LED chips, and
The horizontal brightening piece and being arranged in above-mentioned quantum dot film upper surface is arranged in the vertical of above-mentioned horizontal brightening piece upper surface to add lustre to
Piece, and be arranged backlight module upper surface anti-dazzling screen and the protective film in anti-dazzling screen upper surface is set, to further changing
It has been apt to the illumination effect of backlight module.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of flip LED chips, which is characterized in that the flip LED chips include：Substrate is deposited on the substrate bottom
The first reflecting layer, be deposited on first reflecting layer lower surface n type semiconductor layer, be deposited under the n type semiconductor layer
The interior active layer on surface, is deposited on the p type semiconductor layer lower surface at the p type semiconductor layer for being deposited on the interior active layer lower surface
Ohmic contact layer, be deposited on the second reflecting layer of the ohmic contact layer lower surface, and be arranged in second reflecting layer
Lower surface obtains P electrode and N electrode；
It is provided on first reflecting layer multiple for the protrusion of reflection light and multiple through-holes for direct line.
2. flip LED chips according to claim 1, which is characterized in that the multiple protrusion is distributed in array, adjacent
One through-hole is set between two protrusions.
3. flip LED chips according to claim 2, which is characterized in that the cross-sectional shape of the protrusion includes：Triangle
At least one of shape, inverted trapezoidal and circle.
4. flip LED chips according to claim 3, which is characterized in that the cross-sectional shape of the multiple protrusion is identical.
5. flip LED chips according to claim 2, which is characterized in that it is two neighboring protrusion between spacing range be
[6,8] μm, ranging from [3,5] μm of the diameter of the through-hole.
6. a kind of backlight module, which is characterized in that including：Module bracket, flexible circuit board and multiple such as claim 1-5 appoint
Flip LED chips described in one；
The p-type welding electrode of the flip LED chips and N-type welding electrode, are electrically connected, the flexibility with the flexible circuit board
Wiring board is arranged in the module bracket.
7. backlight module according to claim 6, which is characterized in that the direction flip LED of the flexible circuit board
The one side of chip is coated with reflecting ink layer.
8. backlight module according to claim 7, which is characterized in that the backlight module further includes：It is arranged in flip LED
The diaphragm of the substrate top surface of chip；
The diaphragm includes：Quantum dot film after atomization process；The quantum dot film is coated in the flip LED core
The upper surface of the substrate of piece.
9. backlight module according to claim 8, which is characterized in that the diaphragm further includes：It is arranged in the quantum dot
The horizontal brightening piece of film upper surface, the vertical brightening piece being arranged on the horizontal brightening piece, setting vertically add lustre to described
The anti-dazzling screen of piece upper surface and protective film in the anti-dazzling screen upper surface is set；
The lower surface of the anti-dazzling screen is white, and the upper surface of the anti-dazzling screen is black.
10. backlight module according to claim 6, which is characterized in that the multiple LED flip chip includes at least two
Flip LED chips group；
It is connected in series between flip LED chips in same group, is to be connected in parallel between any two flip LED chips group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721841367.1U CN207651511U (en) | 2017-12-22 | 2017-12-22 | Flip LED chips and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721841367.1U CN207651511U (en) | 2017-12-22 | 2017-12-22 | Flip LED chips and backlight module |
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| Publication Number | Publication Date |
|---|---|
| CN207651511U true CN207651511U (en) | 2018-07-24 |
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ID=62878815
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721841367.1U Active CN207651511U (en) | 2017-12-22 | 2017-12-22 | Flip LED chips and backlight module |
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| Country | Link |
|---|---|
| CN (1) | CN207651511U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638137A (en) * | 2018-11-07 | 2019-04-16 | 惠州市华星光电技术有限公司 | Flip LED chips and down straight aphototropism mode set |
| CN111288369A (en) * | 2020-02-27 | 2020-06-16 | 东莞精旺电子有限公司 | CSP LED light source processing technology for intelligent surface automobile interior trim touch panel |
-
2017
- 2017-12-22 CN CN201721841367.1U patent/CN207651511U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638137A (en) * | 2018-11-07 | 2019-04-16 | 惠州市华星光电技术有限公司 | Flip LED chips and down straight aphototropism mode set |
| CN111288369A (en) * | 2020-02-27 | 2020-06-16 | 东莞精旺电子有限公司 | CSP LED light source processing technology for intelligent surface automobile interior trim touch panel |
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Effective date of registration: 20240712 Address after: 241000 Wei'er Second Road, East Zone, Economic and Technological Development Zone, Wuhu City, Anhui Province, China Patentee after: Anhui ruituo Electronics Co.,Ltd. Country or region after: China Address before: Buildings E and F of the factory building in Xiawei Village, Ruhu Town, Huicheng District, Huizhou City, Guangdong Province, 519000 Patentee before: HUIZHOU THORLED-OPTO Co.,Ltd. Country or region before: China |