CN110112140A - A kind of display panel and preparation method thereof - Google Patents
A kind of display panel and preparation method thereof Download PDFInfo
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- CN110112140A CN110112140A CN201910323645.1A CN201910323645A CN110112140A CN 110112140 A CN110112140 A CN 110112140A CN 201910323645 A CN201910323645 A CN 201910323645A CN 110112140 A CN110112140 A CN 110112140A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
Abstract
The invention discloses a kind of display panel and preparation method thereof, the display panel includes array substrate；The array substrate includes display surface；An at least metal routing layer；Anti-reflective layer, the metal routing layer are set to the side that the anti-reflective layer deviates from the display surface, and the anti-reflective layer is to cover an at least metal routing layer；Wherein, the anti-reflective layer is that the beneficial effects of the present invention are display panels of the invention and preparation method thereof by covering one layer of anti-reflective layer at the metal routing in array substrate for photovoltaic device, only have metal routing in array substrate slowing down environment light and reflects bring " dazzle " problem, anti-reflective layer of the invention uses photovoltaic device, the reflectivity of its reflectivity not only counnter attack film more common than industry is lower, and due to the characteristic of photovoltaic device itself, it can generate electricity under strong light action, it is supplied to display panel electric energy, enhance the cruising ability of display panel.
Description
Technical field
The present invention relates to diode displaying field, in particular to a kind of display panel and preparation method thereof.
Background technique
Continuous with Portable intelligent terminal device is popularized, and the frame of the display panel of intelligent terminal is increasingly
It is narrow, it might even be possible to accomplish comprehensive screen of almost Rimless.
Current display panel generally uses OLED (Organic Light-Emitting Diode, organic light-emitting diodes
Pipe) two kinds of display panel of display panel and LCD (Liquid Crystal Display, liquid crystal display), wherein organic electroluminescence is sent out
Optical diode (Organic Light Emitting Diode, OLED) display panel is with its fast response time, lucuriant in design, light
Thin the advantages that facilitating the up-and-coming youngster as display panel industry.
The structure different from of four side Rimless light-emitting-diode panels and conventional light emitting diodes panel, Conventional luminescent two
For pole pipe panel film transistor close to backlight side (inboard), color membrane substrates are placed on outside, four side Rimless light emitting diodes
Panel film transistor backboard is placed on outside, and color film backboard is placed on inboard.But this structural adjustment can bring the problems such as dazzle.It is former
Because be thin film transistor (TFT) side outwardly, there are many metal lines in thin film transistor (TFT) side, and metallic reflection rate is much higher than the anti-of color film backboard
Rate is penetrated, under strong light environment, the problems such as display glare is serious.
Summary of the invention
Technical problem to be solved by the present invention lies in array substrate is usually set to the outer of display panel in the prior art
Side, color membrane substrates are set to the inboard of display panel, and since array substrate is equipped with metal routing, and the reflectivity of metal routing is remote
Greater than the reflectivity of color membrane substrates, this structure can bring display panel " dazzle " problem.
To solve the above-mentioned problems, the present invention provides a kind of display panel, including array substrate, the array substrate packets
Substrate is included, the substrate is equipped with a display surface；An at least metal routing layer；And anti-reflective layer, it is set on the substrate, institute
The side that metal routing layer deviates from the display surface set on the anti-reflective layer is stated, the anti-reflective layer is to cover an at least gold medal
Belong to routing layer；Wherein, the anti-reflective layer is photovoltaic device.
Further, the metal routing includes grid routing layer；The array substrate further includes buffer layer, is set to described
On substrate and cover the anti-reflective layer；The grid routing layer is set on the buffer layer and is right against the anti-reflective layer；
Insulating layer is overlying on the grid routing layer；Active layer is set on the insulating layer, and source-drain electrode routing layer is set to the insulation
On layer and it is electrically connected to the active layer；Flatness layer has edge layer and the source and drain on the insulating layer and described in covering
Pole routing layer.
Further, the anti-reflective layer includes n type semiconductor layer, is set on the substrate；And p type semiconductor layer, if
In on the n type semiconductor layer, the grid routing layer is set on the p type semiconductor layer.
Further, institute's metal routing includes grid routing layer；The array substrate further includes substrate, the counnter attack
Photosphere is set to the one side of the substrate, and the grid routing layer is set on the another side of the glass substrate and is right against described anti-
Reflective layer；Gate insulating layer is overlying on the grid routing layer；Active layer is set on the gate insulating layer, source-drain electrode cabling
Layer is set on the gate insulating layer and is electrically connected to the active layer；Flatness layer is set on the insulating layer and covers institute
Edge layer and the source-drain electrode routing layer are stated.
Further, the anti-reflective layer includes n type semiconductor layer, is set on the substrate；P type semiconductor layer is set to
On the n type semiconductor layer.
Further, the display panel further includes glass substrate；And color membrane substrates, it is set to the glass substrate and institute
It states between array substrate
The present invention also provides a kind of production methods of display panel, include the following steps array substrate making step, packet
It includes and a substrate is provided, have a display surface on the substrate；Anti-reflective layer is deposited on the substrate, wherein the anti-reflective layer
For photovoltaic device；An at least metal routing layer is made back to the display surface side in the anti-reflective layer.
Further, the array substrate making step further includes being formed on the metal routing layer using silk-screen printing
Insulating layer；It is formed on the insulating layer active layer；It is formed on the insulating layer source and drain grade routing layer, wherein the source and drain
Active layer, the part that the active layer is covered by the source and drain grade routing layer and the source and drain grade described in grade routing layer covering part
Routing layer is electrically connected；It is formed on the insulating layer flatness layer, the flatness layer covers the active layer and the source and drain grade
Routing layer.
Further, in the array substrate making step by the mask plate in the substrate back to the display
Face side forms n type semiconductor layer, and p type semiconductor layer, the N are formed on the n type semiconductor layer by the mask plate
Type semiconductor layer and the p type semiconductor layer form the anti-reflective layer；Buffer layer is formed on the anti-reflective layer, it is described slow
It rushes layer and covers the anti-reflective layer；Described in being formed on the anti-reflective layer described in the buffer layer face by the gate mask plate
Metal routing layer.
Further, pass through the mask plate in the array substrate making step in the display surface of the substrate
Side forms n type semiconductor layer, and p type semiconductor layer, the N-type are formed on the n type semiconductor layer by the mask plate
Semiconductor layer and the p type semiconductor layer form the anti-reflective layer；By the gate mask plate in the substrate back to institute
It states and forms the metal routing layer on display surface side, wherein anti-reflective layer described in the metal routing layer face.
The invention has the advantages that display panel of the invention is anti-by covering one layer at the metal routing in array substrate
Reflective layer only has metal routing in array substrate slowing down environment light and reflects bring " dazzle " problem, and of the invention is anti-
Reflective layer uses photovoltaic device, and the reflectivity of reflectivity not only counnter attack film more common than industry is lower, and due to photovoltaic device
The characteristic of part itself can generate electricity under strong light action, be supplied to display panel electric energy, enhance the continuation of the journey energy of display panel
Power.The production method of display panel of the invention is made anti-reflective layer in metal routing layer of unified gate mask plate, no
It needs individually to deposit anti-reflective layer, reduces production process, save cost of manufacture.
Detailed description of the invention
The present invention is further explained with reference to the accompanying drawings and examples.
Fig. 1 is the display panel schematic diagram in embodiment 1.
Fig. 2 is the array substrate schematic diagram in embodiment 1.
Fig. 3 is the array substrate schematic diagram in embodiment 2.
In figure
10 display panels；110 array substrates；
120 color membrane substrates；130 glass substrates；
111 substrates；112 metal routing layers；
113 insulating layers；114 source-drain electrode metal layers；
1141 source metals；1142 drain metal layers；
115 flatness layers；1101 display surfaces；
1121 anti-reflective layers；11211N type semiconductor layer；
11212P type semiconductor layer；116 buffer layers；
1143 active layers；
Specific embodiment
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.Direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom" etc. are only
With reference to the direction of annexed drawings.Therefore, the direction term used is to illustrate and understand the present invention, rather than to limit this hair
It is bright.
Embodiment 1
As shown in Figure 1, display panel 10 of the invention includes array substrate 110,120 and of color membrane substrates in the present embodiment
Glass substrate 130, wherein the color membrane substrates 120 are set between the array substrate 110 and the glass substrate 130.
As shown in Fig. 2, the array substrate 110 include substrate 111, the substrate 111 be glass substrate or flexible base board,
The substrate 111 is equipped with metal routing layer 112, and the metal routing layer 112 is grid cabling, on the metal routing 112
It is covered with insulating layer 113, the insulating layer 113 is for completely cutting off remaining in the metal routing layer 112 and the array substrate 110
The electric connection of metal routing is equipped with source-drain electrode metal layer 114 and active layer 1143, the source-drain electrode in the insulating layer 113
Metal layer 114 includes source metal 1141 and drain metal layer 1142, the source metal 1141 and the drain metal
Layer 1142 is electrically connected to the active layer 1143, and one layer of flatness layer 115 is also covered on the source-drain electrode metal layer 114,
The flatness layer 115 covers the entire source-drain electrode metal layer 114 and is set on the insulating layer 113.
The color membrane substrates 120 are set to the array substrate 110 close to 112 side of metal routing.
The array substrate 110 further includes a display surface 1101, and the display surface 1101 is set to the substrate 111 back to institute
112 side of metal routing layer is stated, since environment light can be by the display surface 1101 into the array substrate 110 and via institute
The reflection of color membrane substrates 120 is stated, in the prior art, is distributed in the array substrate 110 close to the side of the display surface 1101
The metal routing 112, and the reflectivity of the metal routing 112 is much higher than the reflectivity of the color membrane substrates 120, this can lead
The display panel 10 is caused " dazzle " problem occur, in order to solve this problem, in the present embodiment, in the metal routing layer
112 cover one layer of anti-reflective layer 1121 close to 1101 side of display surface, and the anti-reflective layer 1121 uses photovoltaic device,
Not only luminance factor often uses T-coating low, but also photovoltaic device can be generated electricity under strong light environment and be provided described aobvious
Show that the terminal of panel 10 uses.
Specifically, in the present embodiment, the anti-reflective layer 1121 includes n type semiconductor layer 11211 and p type semiconductor layer
11212, the n type semiconductor layer 11211 is set on the substrate 111 is far from the display surface side and it is in the substrate 111
On projection projection of the metal routing 112 on the substrate 111 is completely covered, the p type semiconductor layer 11212 is set to
On the n type semiconductor layer 11211, wherein the array substrate 110 further includes a buffer layer 116, and the buffer layer 116 covers
The anti-reflective layer 1121 is covered, to completely cut off the anti-reflective layer 1121 and the metal routing 112, prevents it from occurring electrically
Connection.
The n type semiconductor layer 11211 and the p type semiconductor layer 11212 form PN junction, when light and the environment light
When irradiating on the anti-reflective layer 1121 via the display surface 1101, a part of photon is made by semiconductor absorber, the energy of light
Transition has occurred in electronics, becomes free electron in PN junction two sides and forms potential difference, when circuit is connected in outside, in the work of the voltage
Under, it will there is electric current to flow through external circuit and generate certain output power, the essence of this process is: photon energy is converted
For the process of electric energy.
In order to preferably explain the present invention, the present embodiment additionally provides a kind of production method of display panel 10, including battle array
The making step of column substrate 110:
One substrate 111 is provided, there is a display surface 1101 on the substrate 111；Anti-reflective layer is prepared on the substrate 111
1121, wherein the anti-reflective layer 1121 is photovoltaic device；In the anti-reflective layer 1121 back to 1101 side of display surface
Make an at least metal routing layer 112.
Insulating layer 113 is formed using silk-screen printing on the metal routing layer 112；It is formed on the insulating layer 113
Active layer 117；Source and drain grade routing layer 114 is formed on the insulating layer 113, wherein 114 covering part of source and drain grade routing layer
Divide the active layer 117, the part that the active layer 117 is covered by the source and drain grade routing layer 114 and the source and drain grade cabling
Layer 114 is electrically connected；Flatness layer 115 is formed on the insulating layer 114, the flatness layer 115 covers 117 He of active layer
The source and drain grade routing layer 114.
Counnter attack luminescent material is deposited in described by gate mask plate (not shown) in 110 making step of array substrate
On substrate 111, the anti-reflective layer 1121 is formed, including show in the substrate 111 back to described by the gate mask plate
Show that 1101 side of face forms n type semiconductor layer 11211, P is formed on the n type semiconductor layer 11211 by the mask plate
Type semiconductor layer 11212；Buffer layer 116 is formed on the anti-reflective layer 1121, the buffer layer 116 covers the reflection-proof
Layer 1121；The metal is formed on the anti-reflective layer 1121 described in 116 face of buffer layer by the gate mask plate to walk
Line layer 112.
Embodiment 2
As shown in figure 3, the present embodiment and embodiment 1 are the difference lies in that in the present embodiment, the anti-reflective layer 1121 is set
In the array substrate 110 close to 1101 side of display surface, the anti-reflective layer 1121 includes n type semiconductor layer 11211
With p type semiconductor layer 11212, the n type semiconductor layer 11211 be set to the substrate 111 close to the display surface side and its
Projection of the metal routing 112 on the substrate 111 is completely covered in projection on the substrate 111, and the p-type is partly led
Body layer 11212 is set on the n type semiconductor layer 11211.
The n type semiconductor layer 11211 and the p type semiconductor layer 11212 form PN junction, when light and the environment light
When irradiating on the anti-reflective layer 1121 via the display surface 1101, a part of photon is made by semiconductor absorber, the energy of light
Transition has occurred in electronics, becomes free electron in PN junction two sides and forms potential difference, when circuit is connected in outside, in the work of the voltage
Under, it will there is electric current to flow through external circuit and generate certain output power, the essence of this process is: photon energy is converted
For the process of electric energy.
In order to preferably explain the present invention, the present embodiment additionally provides a kind of production method of display panel 10, including battle array
The making step of column substrate 110:
One substrate 111 is provided, there is a display surface 1101 on the substrate 111；Anti-reflective layer is prepared on the substrate 111
1121, wherein the anti-reflective layer 1121 is photovoltaic device；In the anti-reflective layer 1121 back to 1101 side of display surface
Make an at least metal routing layer 112.
Insulating layer 113 is formed using silk-screen printing on the metal routing layer 112；It is formed on the insulating layer 113
Active layer 117；Source and drain grade routing layer 114 is formed on the insulating layer 113, wherein 114 covering part of source and drain grade routing layer
Divide the active layer 117, the part that the active layer 117 is covered by the source and drain grade routing layer 114 and the source and drain grade cabling
Layer 114 is electrically connected；Flatness layer 115 is formed on the insulating layer 114, the flatness layer 115 covers 117 He of active layer
The source and drain grade routing layer 114.
Further, reflection-proof is deposited by gate mask plate (not shown) in 110 making step of array substrate
Material forms the anti-reflective layer 1121 on the substrate 111, including passing through the mask plate in the institute of the substrate 111
State 1101 side of display surface formed n type semiconductor layer 11211, by the mask plate on the n type semiconductor layer 11211 shape
At p type semiconductor layer 11212；By the gate mask plate in the substrate 111 back to shape on 1101 side of display surface
At the metal routing layer 112, wherein anti-reflective layer 1121 described in 112 face of metal routing layer.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all in spirit of the invention and
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within principle.
Claims (10)
1. a kind of display panel, which is characterized in that including
Array substrate, the array substrate include
Substrate, the substrate are equipped with a display surface；
An at least metal routing layer；And
Anti-reflective layer is set on the substrate, and the metal routing layer is set to one that the anti-reflective layer deviates from the display surface
Side, the anti-reflective layer is to cover an at least metal routing layer；Wherein, the anti-reflective layer is photovoltaic device.
2. display panel according to claim 1, which is characterized in that
The metal routing includes grid routing layer；
The array substrate further includes
Buffer layer is set on the substrate and covers the anti-reflective layer；The grid routing layer be set to the buffer layer on and
It is right against the anti-reflective layer；
Insulating layer is overlying on the grid routing layer；
Active layer is set on the insulating layer, and source-drain electrode routing layer is set on the insulating layer and is electrically connected to described active
Layer；
Flatness layer has edge layer and the source-drain electrode routing layer on the insulating layer and described in covering.
3. display panel according to claim 2, which is characterized in that the anti-reflective layer includes
N type semiconductor layer is set on the substrate；With
P type semiconductor layer is set on the n type semiconductor layer, and the grid routing layer is set on the p type semiconductor layer.
4. display panel according to claim 1, which is characterized in that the metal routing includes grid routing layer；
The array substrate further includes
Substrate, the anti-reflective layer are set to the one side of the substrate,
The grid routing layer is set on the another side of the glass substrate and is right against the anti-reflective layer；
Gate insulating layer is overlying on the grid routing layer；
Active layer is set on the gate insulating layer, and source-drain electrode routing layer is set on the gate insulating layer and is electrically connected to
The active layer；
Flatness layer has edge layer and the source-drain electrode routing layer on the insulating layer and described in covering.
5. display panel according to claim 4, which is characterized in that the anti-reflective layer includes
N type semiconductor layer is set on the substrate；
P type semiconductor layer is set on the n type semiconductor layer.
6. display panel according to claim 1, which is characterized in that further include
Glass substrate；And
Color membrane substrates are set between the glass substrate and the array substrate.
7. a kind of production method of display panel, which is characterized in that include the following steps
Array substrate making step, including
One substrate is provided, there is a display surface on the substrate；
Anti-reflective layer is prepared on the substrate, wherein the anti-reflective layer is photovoltaic device；
An at least metal routing layer is made back to the display surface side in the anti-reflective layer.
8. the production method of display panel according to claim 7, which is characterized in that the array substrate making step is also
Including
Insulating layer is formed on the metal routing layer；
It is formed on the insulating layer active layer；
It is formed on the insulating layer source and drain grade routing layer, wherein active layer described in the source and drain grade routing layer covering part, institute
The part that active layer is covered by the source and drain grade routing layer is stated to be electrically connected with the source and drain grade routing layer；
It is formed on the insulating layer flatness layer, the flatness layer covers the active layer and the source and drain grade routing layer.
9. the production method of display panel according to claim 7, which is characterized in that
In the array substrate making step
N type semiconductor layer is formed back to the display surface side in the substrate by the mask plate, passes through the mask plate
P type semiconductor layer is formed on the n type semiconductor layer, the n type semiconductor layer and the p type semiconductor layer form described anti-
Reflective layer；
Buffer layer is formed on the anti-reflective layer, the buffer layer covers the anti-reflective layer；
The metal routing layer is formed on the anti-reflective layer described in the buffer layer face by the gate mask plate.
10. the production method of display panel according to claim 7, which is characterized in that make and walk in the array substrate
In rapid
N type semiconductor layer is formed in the display surface side of the substrate by the mask plate, is existed by the mask plate
P type semiconductor layer is formed on the n type semiconductor layer, the n type semiconductor layer and the p type semiconductor layer form the counnter attack
Photosphere；
By the gate mask plate in the substrate back to forming the metal routing layer on the display surface side, wherein
Anti-reflective layer described in the metal routing layer face.
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| CN201910323645.1A CN110112140A (en) | 2019-04-22 | 2019-04-22 | A kind of display panel and preparation method thereof |
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| CN201910323645.1A CN110112140A (en) | 2019-04-22 | 2019-04-22 | A kind of display panel and preparation method thereof |
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| WO2021233437A1 (en) * | 2020-05-22 | 2021-11-25 | 海信视像科技股份有限公司 | Display device |
| CN114167638A (en) * | 2020-09-11 | 2022-03-11 | 合肥京东方光电科技有限公司 | Display device and manufacturing method of array substrate contained in display device |
| CN114446186A (en) * | 2020-10-30 | 2022-05-06 | 海信视像科技股份有限公司 | Transparent display device |
| CN114913782A (en) * | 2021-02-09 | 2022-08-16 | 海信视像科技股份有限公司 | Display device |
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