CN110391283A - Organic light emitting display panel and organic light-emitting display device - Google Patents
Organic light emitting display panel and organic light-emitting display device Download PDFInfo
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- CN110391283A CN110391283A CN201910703213.3A CN201910703213A CN110391283A CN 110391283 A CN110391283 A CN 110391283A CN 201910703213 A CN201910703213 A CN 201910703213A CN 110391283 A CN110391283 A CN 110391283A
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- 239000010409 thin film Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 55
- 230000000694 effects Effects 0.000 abstract description 15
- 238000004020 luminiscence type Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 193
- 238000010586 diagram Methods 0.000 description 21
- 230000003760 hair shine Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000010010 raising Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Abstract
The embodiment of the invention discloses a kind of organic light emitting display panel and organic light-emitting display devices, by the way that the source electrode of the thin film transistor (TFT) of organic light emitting display panel or drain electrode are extended to form first electrode, and first electrode has engraved structure, without being additionally formed the first electrode of organic luminescence unit, organic light emitting display panel film layer structure can be simplified, organic light emitting display panel is made to realize double-side；Simultaneously, the first electrode of organic light-emitting units is extended to form by the source electrode or drain electrode of thin film transistor (TFT), the source electrode of the thin film transistor (TFT) or drain electrode have lower sheet resistance compared to other film layers of thin film transistor (TFT), can make organic light-emitting units has lesser pressure drop, it can be improved the luminous efficiency of organic light-emitting units, the power consumption for advantageously reducing organic light emitting display panel improves the display effect of organic light emitting display panel.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of organic light emitting display panels and organic light emitting display to fill
It sets.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display device have it is frivolous, from
The feature of luminous, rich in color etc., and have many advantages, such as wide, low in energy consumption, the achievable Flexible Displays of fast response time, visual angle,
Therefore OLED display device is with a wide range of applications.
Although OLED display device have the characteristics that compared to other display devices it is frivolous, it is light in front display device
Under thinning development trend, further decrease the thickness of display device and do not influence display device normally show shine, become OLED
Urgent problem to be solved in display panel development process.
Summary of the invention
The embodiment of the present invention provides a kind of organic light emitting display panel and organic light-emitting display device, so that organic light emission is aobvious
Show that panel there can be superior display illumination effect under the premise of meeting lightening development trend.
In a first aspect, the embodiment of the invention provides a kind of organic light emitting display panels, comprising:
Underlay substrate；
Thin film transistor (TFT) and organic light-emitting units positioned at the underlay substrate side；The thin film transistor (TFT) includes source electrode
And drain electrode；
The organic light-emitting units include the first electrode being stacked, luminescent layer and second electrode, the luminescent layer position
Between the first electrode and the second electrode, the second electrode is located at the first electrode far from the underlay substrate
Side；
Wherein, the source electrode or drain electrode extend to form the first electrode, and the first electrode includes engraved structure, institute
It is overlapping with the engraved structure to state luminescent layer and the second electrode.
Second aspect, the embodiment of the invention provides one kind, including above-mentioned organic light emitting display panel.
The embodiment of the invention provides a kind of organic light emitting display panel and organic light-emitting display device, the organic light emission is aobvious
The thin film transistor (TFT) for showing panel includes source electrode and drain electrode, and the organic light-emitting units of the organic light emitting display panel include first electrode
And second electrode, and the luminescent layer between first electrode and second electrode；Wherein it is remote to be located at first electrode for second electrode
Side from underlay substrate；By the way that the source electrode of thin film transistor (TFT) or drain electrode are extended to form first electrode, without additional shape
At the first electrode of organic light-emitting units, compared to the prior art in organic light emitting display panel luminescence unit film layer with it is thin
The case where film layer of film transistor is respectively formed can simplify organic light emitting display panel film layer structure, be conducive to organic light emission
Display panel it is lightening；Meanwhile the first electrode of organic light-emitting units is extended to form by the source electrode or drain electrode of thin film transistor (TFT),
The source electrode of the thin film transistor (TFT) or drain electrode have lower sheet resistance compared to other film layers of thin film transistor (TFT), can make organic hair
Light unit has lesser pressure drop, can be improved the luminous efficiency of organic light-emitting units, advantageously reduces organic light emitting display
The power consumption of panel improves the display effect of organic light emitting display panel.It is engraved in addition, organic light emitting display panel first electrode has
Hollow structure, the luminescent layer and first electrode of the engraved structure and organic light-emitting units, which have, to be overlapped, so as to make organic hair
Light display panel realizes double-side.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the organic light emitting display panel of the prior art；
Fig. 2 is a kind of structural schematic diagram of organic light emitting display panel provided in an embodiment of the present invention；
Fig. 3 is a kind of overlooking structure diagram of first electrode engraved structure provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention；
Fig. 7 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention；
Fig. 8 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention；
Fig. 9 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention；
Figure 10 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention；
Figure 11 is a kind of structural schematic diagram of organic light-emitting display device provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Organic light emitting display panel generally includes thin film transistor (TFT) and organic light-emitting units, and thin film transistor (TFT) and organic hair
Light unit is stacked, and the source electrode of thin film transistor (TFT) or drain electrode are electrically connected by via hole with the anode of organic light-emitting units, with
Driving signal is provided for organic light-emitting units, is shone so that organic light-emitting units are shown.
In the prior art, to make organic light-emitting units meet lightening development trend, pass through having film crystal light
Active layer extends to form the anode of organic light-emitting units in organic light emitting display panel.Fig. 1 is the organic light emitting display of the prior art
The structural schematic diagram of panel.Such as Fig. 1, organic light emitting display panel includes underlay substrate 11, positioned at the thin of 11 side of underlay substrate
Film transistor T and organic light-emitting units P, thin film transistor (TFT) T may include active layer M, grid G, source S and drain D；Organic hair
Light unit P includes anode P1, cathode P2 and the luminescent layer P3 between anode P1 and cathode P2.By the way that active layer M is prolonged
It stretches, to form the anode P1 of organic light-emitting units P, the film layer of the anode P1 without being additionally provided with machine luminescence unit P, drop
The thickness of low organic light emitting display panel.
Wherein, active layer M material typically metal oxide semiconductor material, and metal oxide semiconductor material
Usual resistivity with higher carries out conducting as the part of anode P1 even if extending active layer M, at this time anode P1 electricity
Resistance rate still has biggish resistivity compared to the anode of metal material.Illustratively, the material of active layer M can be oxidation
Indium gallium zinc will extend the part active layer M for being anode P1 under helium atmosphere, carry out corona treatment and realize indium gallium zinc
Conducting, the sheet resistance of indium gallium zinc (film thickness 70nm) is about 1000 Ω at this time, and metal anode, such as metal silver electrode
The sheet resistance of (film thickness 100nm) is about 0.4 Ω.In this way, active layer M is extended and directly forms anode P1 compared to metal electrode
Scheme, even if carrying out conductive treatment, the resistance at anode P1 is still larger, and picture element signal has biggish pressure here
Drop, influences normally to show, reduces the display effect of display panel.
Based on above-mentioned technical problem, the embodiment of the present invention provides a kind of organic light emitting display panel, the organic light emitting display
Panel includes:
Underlay substrate；
Thin film transistor (TFT) and organic light-emitting units positioned at the underlay substrate side；The thin film transistor (TFT) includes source electrode
And drain electrode；
The organic light-emitting units include the first electrode being stacked, luminescent layer and second electrode, the luminescent layer position
Between the first electrode and the second electrode, the second electrode is located at the first electrode far from the underlay substrate
Side；
Wherein, the source electrode or drain electrode extend to form the first electrode, and the first electrode includes engraved structure, institute
It is overlapping with the engraved structure to state luminescent layer and the second electrode.
By adopting the above technical scheme, in a first aspect, by the way that the source electrode of thin film transistor (TFT) or drain electrode are extended to form organic hair
The first electrode of light unit, without being additionally formed the first electrode of organic luminescence unit, to simplify organic light emitting display panel
Film layer structure, be conducive to the lightening of organic light emitting display panel；The source electrode and drain electrode of second aspect, thin film transistor (TFT) is usual
For metal material, compared to other film layers of thin film transistor (TFT), the source electrode and drain electrode of thin film transistor (TFT) has lesser resistivity,
By the way that the source electrode of film crystal light or drain electrode to be extended to form to the first electrode of organic light-emitting units, be conducive to reduce luminous signal
Pressure drop in transmission process improves the luminous efficiency of organic light-emitting units, reduces the power consumption of organic light emitting display panel, and raising has
The display effect of machine light emitting display panel；In addition, the source electrode of film crystal light or drain electrode are extended to form organic light-emitting units
First electrode, and engraved structure is set at the overlapping place of the first electrode and luminescent layer and second electrode, so that luminescent layer issues
Light can through second electrode realize top shine, while can through first electrode engraved structure realize bottom shine, thus
So that organic light emitting display panel can be realized double-sided display.
It should be noted that organic light-emitting units include first electrode, second electrode and be located at first electrode and second
Luminescent layer between electrode, the organic light-emitting units can be for example an Organic Light Emitting Diode, and first electrode can be to have
The anode of machine light emitting diode, second electrode can be the cathode of Organic Light Emitting Diode；Likewise, first electrode can be to have
The cathode of machine light emitting diode, second electrode can be the anode of Organic Light Emitting Diode, and the embodiment of the present invention, which does not do this, to be had
Body limits.For ease of description, the embodiment of the present invention, using first electrode as anode, second electrode is real to the present invention for cathode
The technical solution for applying example is illustrated.
It is core of the invention thought above, following will be combined with the drawings in the embodiments of the present invention, to the embodiment of the present invention
In technical solution be clearly and completely described.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Under the premise of making creative work, every other embodiment obtained be shall fall within the protection scope of the present invention.
Fig. 2 is a kind of structural schematic diagram of organic light emitting display panel provided in an embodiment of the present invention.As shown in Fig. 2, having
Machine light emitting display panel 100 includes underlay substrate 31, thin film transistor (TFT) 10 and organic light-emitting units positioned at underlay substrate side
20.The thin film transistor (TFT) 10 include source electrode 12 and drain electrode 13, the organic light-emitting units 20 include be stacked first electrode 21,
Luminescent layer 23 and second electrode 22, and luminescent layer 23, between first electrode 21 and second electrode 22, second electrode 22 is located at
Side of the first electrode 21 far from underlay substrate 31.Wherein, the source electrode 12 of thin film transistor (TFT) 10 or drain electrode 13 extend to form organic
20 first electrode 21 of luminescence unit, and the first electrode 21 includes engraved structure 201, luminescent layer 23 and second electrode 21 with engrave
Hollow structure 201 is overlapping.
Illustratively, such as Fig. 2, the organic light-emitting units 20 of organic light emitting display panel 100 include first electrode 21, second
Electrode 22 and the luminescent layer 23 between first electrode 21 and second electrode 22.There are driving electrodes to be applied to organic light emission
When the first electrode 21 and second electrode 22 of unit 20, corresponding carrier can be injected in luminescent layer 23, and carrier can sent out
Recombination luminescence in photosphere 23, to realize that the display of organic light-emitting units shines.Due to including in organic light emitting display panel 100
Multiple organic light-emitting units 20, when showing a frame picture, each organic light-emitting units 20 show that luminous situation has difference, and
23 region of luminescent layer is the light emitting region of organic light-emitting units 20, therefore to can be realized each organic light-emitting units 20
Also pixel confining layer 35 need to be arranged away from the side of underlay substrate 31 in first electrode 21, to limit luminescent layer in individually control
23 forming position.Wherein, the first electrode 21 of organic light-emitting units 100 is by film crystal in organic light emitting display panel 100
The source electrode 12 of pipe 10 or drain electrode 13 extend to form.It is separate that the second electrode 22 of the organic light-emitting units 100 is located at first electrode 21
The source electrode 12 of film crystal light or drain electrode 13 are extended to form first electrode 21 by the side of underlay substrate 31, can be in first electrode
21 sides far from underlay substrate 31 sequentially form luminescent layer 23 and second electrode 22.
The thin film transistor (TFT) 10 of organic light emitting display panel 100 includes source electrode 12 and drain electrode 13, and the thin film transistor (TFT) 10 is also
It may include active layer 11, grid 15 and the gate insulating layer 14 between grid 15 and active layer 11；Meanwhile You Jifa
Light display panel 100 further includes being located at 13 planarization layers 34 far from 11 side of underlay substrate of source electrode 12 and drain electrode.The film is brilliant
The grid 15 of body pipe 10 can be located at side of the active layer 11 far from underlay substrate 31, form top-gate thin-film transistors, and film is brilliant
The grid 15 of body pipe 10 can also be located at the side of the close underlay substrate 31 of active layer, form bottom gate thin film transistor.When thin
When the grid 15 of film transistor is located at side of the active layer 11 far from underlay substrate 31, first it can deviate from underlay substrate in active layer 11
31 side forms insulating layer, then forms gate metal layer, while etching grid away from the side of active layer 11 in the insulating layer
Metal layer and insulating layer, to form gate insulating layer 14 and grid 15, to advantageously reduce the quantity and etching of mask plate
Step reduces cost, improves efficiency.
Wherein, thin film transistor (TFT) 10 can be the driving crystal in pixel-driving circuit corresponding with organic light-emitting units 20
Pipe or other transistors for needing to be electrically connected with organic light-emitting units 20.When thin film transistor (TFT) 10 is and organic light-emitting units
When 20 corresponding driving transistor, the first electrodes 21 of organic light-emitting units 20 need to source electrode 12 with thin film transistor (TFT) 10 or drain electrode
13 electrical connections, i.e., when thin film transistor (TFT) 10 is P-type transistor, the first electrode 21 of organic light-emitting units 20 needs and film crystal
The drain electrode of pipe 10 is electrically connected；When thin film transistor (TFT) 10 is N-type transistor, the first electrodes 21 of organic light-emitting units 20 need to it is thin
The source electrode of film transistor 10 is electrically connected.
By taking thin film transistor (TFT) 10 is P-type transistor as an example, the drain electrode 13 of thin film transistor (TFT) 10 extends to form organic light emission list
The first electrode 21 of member 20, on the one hand, organic light-emitting units 20 can be directly realized by and be electrically connected with the drain electrode 13 of thin film transistor (TFT) 10,
It is not necessarily to be additionally formed the film layer of the first electrode 21 of organic luminescence unit 20 in organic light emitting display panel 100 simultaneously, thus
It is capable of the film layer structure of overall simplification organic light emitting display panel 20, is conducive to the lightening of organic light emitting display panel 20；Separately
On the one hand, the material of the active layer 11 of thin film transistor (TFT) 10 is usually oxide semiconductor material or silicon materials etc., and film is brilliant
The source electrode 12 of body pipe 10 and the material of drain electrode 13 are usually metal material, such as metallic aluminium, Titanium, alloy etc., are usually aoxidized
The resistivity of object semiconductor material is far longer than the resistivity of metal material, therefore passes through the drain electrode 13 of extension film transistor 10
The first electrode 21 for forming organic light-emitting units 20, compared to the active layer of extension film transistor, so that first electrode 21 has
There is lesser sheet resistance, so as to reduce pressure drop when first electrode 21 transmits signal, improves shining for organic light-emitting units 20
Efficiency advantageously reduces the power consumption of organic light emitting display panel 100, improves the display effect of organic light emitting display panel 100.
In addition, the second electrode 22 in organic light-emitting units 20 is usually the higher transparent electrode of light transmittance, and film is brilliant
The light transmittance for the first electrode 21 that the drain electrode of body pipe 10 extends to form is lower.The of organic light-emitting units 20 in the embodiment of the present invention
It is provided with engraved structure 201 on one electrode 21, as shown in figure 3, the engraved structure 201 can be the area surrounded by first electrode 21
Domain (in Fig. 3 (a)), or by the region of 21 semi-surrounding of first electrode (in Fig. 3 (b)), or latticed structure
(not shown) etc..By the way that engraved structure 201 is arranged in first electrode 21, so that the light that luminescent layer 23 issues can penetrate
Second electrode 22 realizes that top shines, while also can realize that bottom shines through the engraved structure 201 of first electrode 21, to make
Organic light emitting display panel 100 realizes double-side, further increases the display effect of organic light emitting display panel.
In addition, organic light emitting display panel 100 can also include encapsulated layer 36, be located at grid 15 and source electrode 12 and drain electrode 13
Between interlayer insulating film 33 and the buffer layer 32 between underlay substrate 31 and active layer 11.
It should be noted that Fig. 2 is only the illustrative attached drawing of the embodiment of the present invention, on the basis of central inventive point of the present invention
On, the film layer structure of organic light emitting display panel 100 can increase and decrease, and the embodiment of the present invention is not specifically limited in this embodiment.Wherein, scheme
2 is merely exemplary by taking the drain electrode 13 of thin film transistor (TFT) 10 extends to form the first electrode 21 of organic light-emitting units 20 as an example；Equally
, the source electrode 12 of thin film transistor (TFT) 10 can also extend to form the first electrode 21 of organic light-emitting units 20.For ease of description, this
Inventive embodiments are carried out so that the drain electrode 13 of thin film transistor (TFT) 10 extends to form the first electrode 21 of organic light-emitting units 20 as an example
Explanation.
Optionally, which further includes insulation in addition to including thin film transistor (TFT) and organic light-emitting units
Layer, the insulating layer are located between the source electrode and/or drain electrode and underlay substrate of thin film transistor (TFT), which has the first opening,
And organic light-emitting units and the first opening are overlapping；The source electrode of thin film transistor (TFT) drains to the first opening extension, and via first
The side wall of opening extends to the inside of the first opening, forms the first electrode of organic light-emitting units.
Illustratively, with continued reference to Fig. 2, the insulation layers of organic light emitting display panel 100 for example source electrode 12 and drain electrode 13
Interlayer insulating film 33 between grid 15.Between underlay substrate 31 and the source electrode 12 and drain electrode 13 of thin film transistor (TFT) 10
The first opening is provided on interlayer insulating film 33, the side wall 331 of first opening can have certain gradient, and first opening
Have with organic light-emitting units 20 it is overlapping, i.e., the first opening can with the first electrodes 21 of organic light-emitting units 20, luminescent layer 23 with
And second electrode 22 is with overlapping.The light that the luminescent layer 23 of the organic light-emitting units 20 issues can pass through the hollow out of first electrode 21
Structure 201 and second electrode 22, and the light that the luminescent layer 23 issues not is a branch of directional light, but one way or another scatters
's.Since the drain electrode 13 of the thin film transistor (TFT) 10 is metal material, by making the drain electrode 13 of thin film transistor (TFT) 10 to the first opening
Extend, and forms the first electrode 21 of organic light-emitting units 20 along the side wall 331 of first opening, it can be in organic light-emitting units
When 20 luminescent layer 23 shines, the light that will be scattered towards the side wall 331 of the first opening can reflect in first electrode 21
Afterwards, it realizes that bottom shines through the engraved structure of first electrode 21, and/or realizes that top shines through second electrode 22, so as to
The utilization rate for improving light, is conducive to the display effect for further increasing organic light emitting display panel 100.
Optionally, the source with continued reference to Fig. 2, in organic light emitting display panel 100, in addition to thin film transistor (TFT) 10 is arranged in
Between pole 12 and/or drain electrode 13 and underlay substrate 31 except insulating layer 33, between thin film transistor (TFT) 10 and underlay substrate 31 also
It is provided with buffer layer 32, the first of insulating layer 33, which is open, exposes the buffer layer 32, and the first electrode of organic light-emitting units 20
21 contact with buffer layer 32.
Specifically, the first electrode 21 of organic light-emitting units 20 is directly contacted with buffer layer 32, so that organic light-emitting units
The light that 20 luminescent layer 23 issues can successively penetrate engraved structure 201, buffer layer 32 and the underlay substrate of first electrode 21
31 realize that bottom shines, other insulating layers compared to the first electrode of organic light-emitting units and buffer layer far from underlay substrate side
The scheme of contact, the first electrode 21 of organic light-emitting units 20 is directly contacted with buffer layer 32 in the embodiment of the present invention, Neng Gou
When bottom shines, the film layer that reducing the light that luminescent layer 23 issues need to penetrate is conducive to 21 raisings so as to improve the transmitance of light
The display effect of display panel.
In embodiments of the present invention, as shown in Fig. 2, organic light emitting display panel 100 includes planarization layer 34, and include
Pixel defining layer 35.The planarization layer 34 can be used for protecting and planarizing thin film transistor (TFT) thereunder and organic light is aobvious
Show other drive circuit layers of panel 100, and pixel defining layer 35 is for preventing or reducing what organic light-emitting units 20 were constituted
Color mixing between pixel.In addition, it is pixel defining layer that the planarization layer 34 of organic light emitting display panel 100, which goes back reusable,.
Optionally, Fig. 4 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention.Fig. 4
In with something in common in Fig. 2, can refer to the description of Fig. 2, be only illustrated herein in Fig. 4 with difference in Fig. 2.Such as Fig. 4
It is shown, in organic light emitting display panel 100, in addition to the source electrode 12 of thin film transistor (TFT) 10 being arranged in and/or drain 13 and substrate
It further include being located at thin film transistor (TFT) 10 far from substrate base between substrate 31 except insulating layer 33, in organic light emitting display panel 100
The side planarization layer 34 of plate 31, the planarization layer 34 include the second opening, and second opening and the first opening are overlapping；It is organic
The second electrode 22 of luminescence unit 20 covers the second opening of planarization layer 34 and planarization layer 34.In this way, without being additionally formed
Pixel defining layer is further thinned the thickness of organic light emitting display panel 100, is conducive to the thin of organic light emitting display panel 100
Type.
For ease of description, being carried out so that the planarization layer of organic light emitting display panel is multiplexed with pixel defining layer as an example below
Explanation.
On that basi of the above embodiments, optionally, Fig. 5 is another organic light emitting display face provided in an embodiment of the present invention
The structural schematic diagram of plate.As shown in figure 5, organic light emitting display panel 100 further includes transparency conducting layer 24；The transparency conducting layer 24
Connect first electrode 21 and luminescent layer 23.
Specifically, the first electrode 21 of organic light-emitting units 20 is extended to form by the drain electrode 13 of thin film transistor (TFT) 10, this is thin
The material of the drain electrode 13 of film transistor 10 is, for example, metal material.It is transparent by being arranged between first electrode 21 and luminescent layer 23
Conductive layer 24 can be matched the work function of luminescent layer 23 and first electrode 21 by transparency conducting layer 24, promote organic light emission list
The luminous efficiency of member 20.Wherein, the material of transparency conducting layer 24 for example may include indium tin oxide, aluminium zinc oxide and indium
At least one of zinc oxide.The light transmission rate with higher of transparency conducting layer 24, even if in first electrode 21 and shining
Transparency conducting layer 24 is set between layer 23, the beam projecting direction of organic light-emitting units 20 will not be influenced, can equally be made organic
Light emitting display panel 100 realizes double-side.
On the basis of the above embodiments, optionally, the active layer of the thin film transistor (TFT) of organic light emitting display panel is located at
Between insulating layer and underlay substrate.The active layer extends to the first opening, contacts with first electrode, and hands over organic light-emitting units
It is folded.
Illustratively, Fig. 6 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention.Such as
Shown in Fig. 6, the drain electrode 13 of thin film transistor (TFT) 10 extends to form the first electrode 21 of organic light-emitting units 20, while by film crystal
The extension of active layer 11 of pipe 10 is contacted with the first electrode 21 of organic light-emitting units 20.In this way, extension film transistor 10 simultaneously
Active layer 11 and drain electrode 13, increase thin film transistor (TFT) 10 active layer 11 and drain electrode 13 contact area, can reduce active
Layer 11 with drain electrode 13 contact resistance, compared to the prior art in only extension film transistor active layer formed organic light emission list
The scheme of the first electrode of member, the embodiment of the present invention can reduce the pressure that organic light-emitting units 20 are transmitted to from thin film transistor (TFT) 10
Drop is conducive to the display effect for improving organic light emitting display panel 100 so as to improve the luminous efficiency of organic light-emitting units 20
Fruit reduces the power consumption of organic light emitting display panel 100.Wherein, the film overlapped with the first electrode 21 of organic light-emitting units 20
The active layer of transistor 10 can pass through conductive treatment, to improve the conductive capability of active layer 11, to improve organic light emission list
The luminous efficiency of member 20 reduces the power consumption of organic light emitting display panel 100.Specifically, channel region can removed to active layer
Except source area and drain region while carry out conducting, the active layer part overlapped with first electrode 21 is carried out conductive
Change, thus, do not have to additional process processing procedure.
Optionally, with continued reference to Fig. 6, the active layer 11 of thin film transistor (TFT) 10 is transparent active layer.
It is overlapped specifically, transparent active layer 11 has with organic light-emitting units 20, and the transparent active layer 11 is positioned at organic
For the luminescent layer 23 of luminescence unit 20 close to the side of underlay substrate 31, which will not influence the sending of luminescent layer 23
Light is emitted towards the side of underlay substrate 31, and organic light emitting display panel can be made to realize double-side.So set, passing through
The first electrode 21 of the formation organic light-emitting units 20 of drain electrode 13 of extension film transistor 10, while extension film transistor 10
Active layer 11 is contacted with first electrode 21, can be reduced on the basis of simplifying the film layer structure of organic light emitting display panel 100
The pressure drop of organic light-emitting units 20 improves the luminous efficiency of organic light-emitting units 20, improves the aobvious of organic light emitting display panel 100
Show effect, reduce the power consumption of organic light emitting display panel 100, while can guarantee that the luminescent layer 23 of organic light-emitting units 20 issues
The transmitance of light makes organic light emitting display panel 100 realize double-side.
In addition, when the drain electrode 13 of extension film transistor 10 forms the first electrode 21 of organic light-emitting units 20, and extend
When the active layer 11 and first electrode 21 of thin film transistor (TFT) 10 contact, which can also be nontransparent active layer.
Fig. 7 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention.Such as Fig. 7, film
The active layer 11 of transistor 10 is nontransparent active layer, and the material of the nontransparent active layer 11 may include monocrystalline silicon, amorphous silicon
And at least one of polysilicon.It shines not influence the bottom of organic light emitting display panel 100, in the non-of thin film transistor (TFT) 10
One hatch frame 201 is set on transparent active layer 11, and the engraved structure 201 of the hatch frame 201 and first electrode 21, which has, to be handed over
It is folded.It so, it is possible to make 20 normal luminous of organic light-emitting units, additionally it is possible to which the light for guaranteeing that organic light-emitting units 20 issue can be towards
The side of underlay substrate 31 is emitted, so that organic light emitting display panel 100 realizes double-sided display.
Wherein, when the drain electrode 13 of thin film transistor (TFT) 10 extends to form the first electrode 21 of organic light-emitting units 20 and extends thin
When the active layer 11 of film transistor 10 and first electrode 21 contact, no matter whether the active layer 11 of thin film transistor (TFT) 10 is transparent to have
Active layer, the settable transparency conducting layer (being not shown in Fig. 6 and Fig. 7) between first electrode 21 and luminescent layer 23, to match
Work function between one electrode 21 and luminescent layer 23 improves the luminous efficiency of organic light-emitting units 20.
Optionally, there are insulation patterns between the source electrode of thin film transistor (TFT) and/or drain electrode and underlay substrate；Wherein, thin
The active layer of film transistor includes source area and drain region, the source electrode and drain electrode of the thin film transistor (TFT) respectively with the source electrode of active layer
Area and drain region contact；And source electrode or drain electrode are contacted via the side wall of layer pattern with source area or drain region, and to organic
Luminescence unit extends to form first electrode.
Illustratively, Fig. 8 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention.Such as
Fig. 8, the insulating layer between the source electrode 12 and/or drain electrode 13 and underlay substrate 31 of thin film transistor (TFT) 10 may include that grid is exhausted
Edge layer 14 and interlayer dielectric layer 33.Wherein, gate insulating layer 14 can be used same mask plate with grid 15 and etch to be formed, and be located at
Interlayer dielectric layer 33 of the grid 15 far from 31 side of underlay substrate can form insulation patterns, the insulation patterns by Patternized technique
33 expose the drain region 131 of active layer 11, and cover other regions of the active layer 11 of thin film transistor (TFT) 11.At this point, film is brilliant
The drain electrode 13 of body pipe 10 extends along the side wall 332 of insulation patterns 33 to be contacted with the drain region 131 of active layer 11, and continues to extend shape
At the first electrode 21 of organic light-emitting units 20.In this way, only by once etching can expose the drain region 131 of active layer 11 with
And the setting position of the first electrode 21 of organic light-emitting units 20, the preparation process of organic light emitting display panel 100 can be simplified；
Meanwhile the via hole that the drain electrode 13 it is not necessary that thin film transistor (TFT) 10 is additionally arranged is electrically connected with the drain region 131 of active layer 11, so as to
Enough reduce the size of thin film transistor (TFT) 10, and then be conducive to improve the area occupied of organic light-emitting units 20, improves organic light emission
The display effect of display panel 100.
In this way, by the drain electrode 13 of thin film transistor (TFT) 10 along the side wall 332 of layer pattern 33 and the drain region of active layer 11
131 contacts, and continue to extend to form the first electrode of organic light-emitting units 20, and the first electrode 11 has engraved structure 201,
The film layer structure of organic light emitting display panel 100 can be simplified, reduce the size of thin film transistor (TFT) 10, and then be conducive to raising to have
The area occupied of machine luminescence unit 20 improves the display effect of organic light emitting display panel 100, makes organic light emitting display panel
100 realize double-sided display；Meanwhile the drain electrode 13 of thin film transistor (TFT) 10 compared to other film layers of thin film transistor (TFT) 10 have it is smaller
Resistivity can reduce organic hair to form the scheme of first electrode compared to other film layers of extension film transistor
The pressure drop of light unit 20 improves the luminous efficiency of organic light-emitting units 20, reduces the power consumption of organic light emitting display panel 100, mentions
The display effect of high organic light emitting display panel 100.
Illustratively, Fig. 9 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention.Figure
Details are not described herein with part identical in Fig. 8 in 9, and only the part different from Fig. 8 to Fig. 9 is illustrated herein.Such as Fig. 9 institute
Show, the drain electrode 13 of thin film transistor (TFT) 10 extends to form the first electrode 21 of organic light-emitting units 20, while extension film transistor
10 active layer 11 is contacted with first electrode 21, can increase the active layer 11 of thin film transistor (TFT) 10 and the contact surface of drain electrode 13
Product reduces the contact resistance of active layer 11 and drain electrode 13, compared to the prior art in only extension film transistor active layer shape
At the scheme of the first electrode of organic light-emitting units, the embodiment of the present invention, which can reduce from thin film transistor (TFT) 10, is transmitted to organic hair
The pressure drop of the voltage signal of light unit 20 is conducive to improve organic so as to improve the luminous efficiency of organic light-emitting units 20
The display effect of light emitting display panel 100 reduces the power consumption of organic light emitting display panel 100.Wherein, with organic light-emitting units 20
The active layer of the overlapping thin film transistor (TFT) 10 of first electrode 21 can pass through conductive treatment, to improve the conductive energy of active layer 11
Power reduces the power consumption of organic light emitting display panel 100 to improve the luminous efficiency of organic light-emitting units 20.Wherein, in Fig. 9
The active layer 11 of thin film transistor (TFT) 10 can be transparent active layer, and the active layer 11 of thin film transistor (TFT) 10 can also in present invention implementation
Think nontransparent active layer.
Illustratively, Figure 10 is the structural schematic diagram of another organic light emitting display panel provided in an embodiment of the present invention.
Details are not described herein with part identical in Fig. 9 in Figure 10, and only the part different from Fig. 9 to Figure 10 is illustrated herein.Such as
It is double to realize organic light emitting display panel 100 when the active layer 11 of thin film transistor (TFT) 10 is nontransparent active layer shown in Figure 10
Face shines, and hatch frame 205 can be arranged at the overlapping position of active layer 11 and the engraved structure 201 of first electrode 21, so that
The light that organic light-emitting units 20 issue can realize that bottom shines through the hatch frame 205 of active layer 11.
Optionally, on the basis of the above embodiments, organic light emitting display panel further includes planarization layer, the planarization layer
Side positioned at thin film transistor (TFT) far from underlay substrate, the planarization layer include the second opening, second opening and organic light emission
The first electrode of unit is overlapping, for limiting the position of organic light-emitting units.
Illustratively, by taking Fig. 8 as an example, organic light emitting display panel 100 further includes planarization layer 34, the planarization layer 34
In side of the thin film transistor (TFT) 10 far from underlay substrate 31, the planarization layer 34 include second opening, this second opening with it is organic
The first electrode 21 of luminescence unit 20 is overlapping, for limiting the position of organic light-emitting units 20.In this way, using organic light emitting display
The planarization layer 34 of panel 100 limits the position of organic light-emitting units 20, i.e., by the planarization layer of organic light emitting display panel 100
34 are multiplexed with the pixel defining layer of organic light emitting display panel 100, without being additionally provided with the picture of machine light emitting display panel 100
Plain definition layer can be further simplified the film layer structure of organic light emitting display panel 100, be conducive to organic light emitting display panel
100 it is lightening.
Certainly, on the basis of not considering to be further simplified the film layer structure of organic light emitting display panel 100, the present invention is real
It applies in example, in the also settable pixel defining layer (not shown) in side of the planarization layer 34 far from underlay substrate 31, the pixel
Definition layer is provided with hatch frame, and the second opening of the hatch frame of pixel defining layer and planarization layer 34 has overlapping, limit
Determine the position of organic light-emitting units 20.
In addition, by the drain electrode 13 of thin film transistor (TFT) 10 along the side wall 332 of layer pattern 33 and the drain electrode of active layer 11
Area 131 contacts, and continues to extend to form in the schemes of first electrode 21 of organic light-emitting units 20, and the of organic light-emitting units 20
Same settable transparency conducting layer (not shown) between one electrode 21 and luminescent layer 23, to match first electrode 21 and shine
Work function between layer 23.
The embodiment of the present invention also provides a kind of organic light-emitting display device, which includes that the present invention is real
Apply example offer organic light emitting display panel, therefore the organic light-emitting display device also have it is provided in an embodiment of the present invention organic
Beneficial effect possessed by light emitting display panel, something in common can refer to understanding above, hereinafter repeat no more.
Illustratively, Figure 11 is a kind of structural schematic diagram of organic light-emitting display device provided in an embodiment of the present invention.Such as
Figure 11, the display device 200 include organic light emitting display panel 100.Wherein, organic light-emitting display device 200 can be mobile phone, put down
Plate computer, intelligent wearable device (for example, smartwatch) and skilled person will appreciate that other kinds of display dress
It sets, the embodiment of the present invention is not construed as limiting this.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (11)
1. a kind of organic light emitting display panel characterized by comprising
Underlay substrate；
Thin film transistor (TFT) and organic light-emitting units positioned at the underlay substrate side；The thin film transistor (TFT) includes source electrode and leakage
Pole；
The organic light-emitting units include the first electrode being stacked, luminescent layer and second electrode, and the luminescent layer is located at institute
It states between first electrode and the second electrode, the second electrode is located at one of the first electrode far from the underlay substrate
Side；
Wherein, the source electrode or drain electrode extend to form the first electrode, and the first electrode includes engraved structure, the hair
Photosphere and the second electrode are overlapping with the engraved structure.
2. organic light emitting display panel according to claim 1, which is characterized in that further include:
Insulating layer is located between the source electrode and/or the drain electrode and the underlay substrate, and the insulating layer has first to open
Mouthful, the organic light-emitting units and first opening are overlapping；
The source electrode drains to the first opening extension, and extends to described first via the side wall of first opening and open
The inside of mouth, forms the first electrode.
3. organic light emitting display panel according to claim 2, which is characterized in that
The thin film transistor (TFT) further includes active layer, and the active layer is between the insulating layer and the underlay substrate, institute
It states active layer and extends to first opening, contacted with the first electrode, and overlapping with the organic light-emitting units.
4. organic light emitting display panel according to claim 2, which is characterized in that further include:
Planarization layer, the side positioned at the thin film transistor (TFT) far from the underlay substrate, the planarization layer are opened including second
Mouthful, second opening and first opening are overlapping；
The second electrode covers the planarization layer and second opening.
5. organic light emitting display panel according to claim 2, which is characterized in that further include:
Transparency conducting layer；
The first electrode is connect by the transparency conducting layer with the luminescent layer.
6. organic light emitting display panel according to claim 2, which is characterized in that
Buffer layer, between the thin film transistor (TFT) and the underlay substrate, the first opening exposure buffer layer, institute
State first electrode and the buffer layer contacts.
7. organic light emitting display panel according to claim 1, which is characterized in that further include:
Layer pattern is located between the source electrode and/or the drain electrode and the underlay substrate；
The thin film transistor (TFT) further includes active layer, and the active layer includes source area and drain region, the source electrode and the leakage
Pole is contacted with the source area of the active layer and drain region respectively；Wherein, the source electrode or drain electrode are via the layer pattern
Side wall contacted with the source area or drain region, and extend to form the first electrode to the organic light-emitting units.
8. organic light emitting display panel according to claim 7, which is characterized in that further include:
Planarization layer, the side positioned at the thin film transistor (TFT) far from the underlay substrate, the planarization layer are opened including second
Mouthful, second opening and the first electrode are overlapping, for limiting the position of the organic light-emitting units.
9. according to organic light emitting display panel described in claim 3 or 7, which is characterized in that
The part that the active layer is overlapped with the first electrode is formed for semiconductor material by conductive treatment.
10. according to organic light emitting display panel described in claim 3 or 7, which is characterized in that
The active layer is transparent active layer.
11. a kind of organic light-emitting display device, which is characterized in that aobvious including the described in any item organic light emissions of claim 1-10
Show panel.
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| CN111489658A (en) * | 2020-04-23 | 2020-08-04 | 上海天马微电子有限公司 | Double-sided display panel, manufacturing method thereof and double-sided display device |
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