WO2020019856A1 - Light panel, backlight module and display apparatus - Google Patents

Light panel, backlight module and display apparatus Download PDF

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Publication number
WO2020019856A1
WO2020019856A1 PCT/CN2019/088545 CN2019088545W WO2020019856A1 WO 2020019856 A1 WO2020019856 A1 WO 2020019856A1 CN 2019088545 W CN2019088545 W CN 2019088545W WO 2020019856 A1 WO2020019856 A1 WO 2020019856A1
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Prior art keywords
light
layer
light source
source chips
emitting layer
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PCT/CN2019/088545
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French (fr)
Chinese (zh)
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李富琳
李潇
宋志成
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青岛海信电器股份有限公司
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Publication of WO2020019856A1 publication Critical patent/WO2020019856A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements

Definitions

  • the present disclosure relates to the field of optoelectronic devices, and in particular, to a light board, a backlight module, and a display device.
  • the size of a single side of a Mini-LED (Mini-Light Emitting Diode) chip is between 100-200 ⁇ m.
  • the Mini-LED chip is used in a direct-lit backlight module, which can achieve area dimming, which will be more side-by-side than normal.
  • the backlight module has better light transmission uniformity, higher contrast and more light and dark details.
  • the distance between two adjacent Mini-LED chips is small and the light is mixed uniformly. It can remove the thick traditional TV backlight film, reduce the light mixing distance, and realize ultra-thin module design.
  • the module thickness is comparable to the thickness of an OLED module.
  • some embodiments of the present disclosure provide a light board, including:
  • some embodiments of the present disclosure provide a backlight module, including: a back plate; a light plate, the light plate is disposed on the back plate, and the light plate is the above-mentioned light plate.
  • some embodiments of the present disclosure provide a display device including the above-mentioned backlight module.
  • FIG. 1 is a schematic structural diagram of a light board according to some embodiments of the present disclosure.
  • FIG. 2 is a schematic structural diagram of an LED chip in the lamp board shown in FIG. 1;
  • FIG. 3 is a first simulation view of light emission uniformity of a lamp board according to some embodiments of the present disclosure
  • FIG. 4 is a light emission uniformity curve diagram I of a lamp board according to some embodiments of the present disclosure.
  • FIG. 5 is a second simulation diagram of the light emission uniformity of a lamp board according to some embodiments of the present disclosure.
  • FIG. 6 is a second light emission uniformity curve diagram 2 of a lamp board according to some embodiments of the present disclosure.
  • FIG. 7 is a third simulation diagram of the light emission uniformity of the lamp board according to some embodiments of the present disclosure.
  • FIG. 8 is a light emission uniformity curve diagram III of a lamp board according to some embodiments of the present disclosure.
  • FIG. 9 is another schematic structural diagram of a light board according to some embodiments of the present disclosure.
  • FIG. 10 is a schematic structural diagram of a backlight module according to some embodiments of the present disclosure.
  • FIG. 11 is a schematic diagram of a display device according to some embodiments of the present disclosure.
  • the lamp board includes a substrate 10, a plurality of light source chips 11, a colloid layer 12, a light emitting layer 13, and a water-oxygen barrier layer 14.
  • the substrate 10 may be made of a material with better water and oxygen barrier properties, such as an aluminum substrate.
  • the plurality of light source chips 11 are arranged on the substrate 10 in an array manner.
  • Each of the plurality of light source chips 11 may be an LED chip, such as a Mini-LED chip, with a rated voltage of about 3V and an operating current of 20-50 mA.
  • the size of a single side of the Mini-LED chip is generally controlled at 100-200 ⁇ m, and the size of a typical Mini-LED chip is length (200 ⁇ m) ⁇ width (100 ⁇ m) ⁇ height (80 ⁇ m).
  • the structure of the LED chip includes: an optical light emitting film system 116, a substrate 111, an epitaxial light emitting layer 112, a DBR reflective layer (distributed Bragg reflection, Distributed Bragg reflectors) 115, and N electrodes 113 and P electrodes 114 located in the same plane.
  • the DBR reflective layer 115 can avoid the loss of backscattered light.
  • the DBR reflective layer 115 is not limited to being disposed under the epitaxial light emitting layer 112, and there are other optional positions for the setting position, such as between the substrate 111 and the epitaxial light emitting layer 112. This disclosure is not limited.
  • the optical light emitting film system 116 has an anti-reflection effect, and the structure of the LED chip may not include the optical light emitting film system 116.
  • the colloid layer 12 covers the plurality of light source chips 11 for protecting the plurality of light source chips 11.
  • the colloid layer 12 is a transparent colloid layer, and can transmit light emitted by the plurality of light source chips 11.
  • the colloid layer 12 is generally made of a material with good light transmission and curability, such as epoxy resin.
  • the light-emitting layer 13 is disposed on a side of the colloid layer 12 remote from the light source chips 11.
  • the light-emitting layer 13 is configured to be excited by light emitted from the light source chips 11 to generate excitation light.
  • Some of the plurality of light source chips 11 are configured to emit light of a first wavelength
  • some of the plurality of light source chips 11 are configured to emit light of a second wavelength.
  • the first wavelength and the second wavelength may be the same or different.
  • both the light of the first wavelength and the light of the second wavelength may be blue light.
  • the first wavelength is different from the second wavelength, the light of the first wavelength is blue and the light of the second wavelength is red; or the light of the first wavelength is blue and the light of the second wavelength is green.
  • the excitation light includes at least one kind of light different from the light of the first wavelength and the light of the second wavelength.
  • the excitation light may include red light and green light; when the light of the first wavelength and light of the second wavelength are both ultraviolet light,
  • the excitation light may include blue light, red light, and green light.
  • the excitation light when the light of the first wavelength is blue light and the light of the second wavelength is red light, the excitation light includes green light; when the light of the first wavelength is blue light and the light of the second wavelength is green light, the The excitation light includes red light.
  • the excitation light is mixed with light of a first wavelength and light of a second wavelength emitted by the plurality of light source chips 11 to form mixed light.
  • the light emitting layer 13 includes a quantum dot material or a fluorescent material.
  • the quantum dot material included in the light emitting layer 13 is a red-green quantum dot mixed material.
  • the red quantum dot material in the blue excitation light emitting layer 13 emits red light having a peak wavelength range of 610 nm to 650 nm; and the green quantum dot material in the blue excitation light emitting layer 13 emits green light having a peak wavelength range of 520 to 550 nm;
  • the red, green, and blue primary colors are mixed to form a mixed light, such as white light.
  • the quantum dot material included in the light emitting layer 13 is a red-green-blue quantum dot mixed material.
  • the quantum dot material is mixed in a colloid (such as epoxy resin), and then the colloid mixed with the quantum dot material is coated on the colloid layer 12 away from the light source chips.
  • a colloid such as epoxy resin
  • the colloid mixed with the quantum dot material is coated on the colloid layer 12 away from the light source chips.
  • One side of 11 that is, the colloid in which the quantum dot material is mixed is coated on the light exit side of the colloid layer 12).
  • the water-oxygen barrier layer 14 is disposed on a side of the light-emitting layer 13 away from the colloid layer 12, that is, the water-oxygen barrier layer 14 is disposed on a light-emitting side of the light-emitting layer 13.
  • the water-oxygen barrier layer 14 protects the light-emitting layer 13 from above the light-emitting layer 13.
  • the water-oxygen barrier layer 14 is a water-oxygen barrier layer deposited on the light-emitting layer 13.
  • the water-oxygen barrier layer 14 can be formed by depositing silicon dioxide or aluminum trioxide on the light-emitting layer 13 by evaporation or sputtering.
  • the water and oxygen barrier film 14 formed by a deposition method has a smaller thickness and a denser material structure, so that the lamp board has a smaller thickness.
  • the water and oxygen barrier layer 14 is provided only on the upper surface of the light emitting layer 13 away from the colloidal layer 12, and there is no need to provide a water and oxygen barrier layer on the upper and lower surfaces of the light emitting layer 13, so further Reduced thickness of light board.
  • the distance between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light-emitting layer 13 is in contact with the transparent colloid layer 12 is h1, in the same row or the same column
  • the distance between two adjacent light source chips 11 is P.
  • the distance P between two adjacent light source chips 11 may be the distance between the centers of two adjacent light source chips.
  • the distance h1 between the surface in contact with the plurality of light source chips 11 and the surface in contact with the light-emitting layer 13 and the colloidal layer 12 may be selected to be a small value, for example, the minimum value of h1 may be 120 ⁇ m.
  • the light intensity of the Mini-LED chip has a Lambertian distribution.
  • the light output angle ⁇ indicates an included angle between the emitted light and a direction perpendicular to the plane where the multiple light source chips are located. As shown in FIG. 1, the light angle is an included angle between the emitted light and the vertical direction. That is, as shown in FIG. 1, when each Mini-LED chip is a blue light LED chip, the quantum dot material located directly above a certain Mini-LED chip is more susceptible to high-intensity blue light, and the material located at a position where the light emission angle is large.
  • the quantum dot material (for example, a quantum dot material at a spaced position between two adjacent Mini-LED chips) is irradiated with a low blue light intensity, so the light received by the light emitting layer 13 also varies with the light intensity of each Mini-LED chip.
  • the Lambertian distribution of ZnO exhibits non-uniformity, which in turn causes non-uniformity of the excitation light.
  • a reasonable ratio of the ratio h1 / P between the distance h1 of each Mini-LED chip and the light-emitting layer 13 and the distance P between the centers of two adjacent Mini-LED chips is set.
  • the light at the space between two adjacent Mini-LED chips can be superimposed in the light-emitting layer 13, thereby increasing the light intensity at the space between two adjacent Mini-LED chips and weakening the Mini-LED.
  • the unevenness of Lambertian distribution of chip light intensity improves the uniformity of excitation light.
  • the distance h1 between each Mini-LED chip and the light-emitting layer 13 is set to be large, or when the distance P between the centers of two adjacent Mini-LED chips is set to be small.
  • the light rays of two adjacent Mini-LED chips have a large overlapping area at the interval position between the two adjacent Mini-LED chips, so the light at the interval positions between two adjacent Mini-LED chips The strength can be increased, which can further improve the light emitting uniformity of the lamp plate.
  • the adjacent The light of the two Mini-LED chips has a small overlapping area at the interval position between the two adjacent Mini-LED chips, so the light intensity at the interval position between the two adjacent Mini-LED chips cannot be It is effectively increased, and it is difficult to improve the uniformity of light emission of the lamp plate.
  • some embodiments of the present disclosure simulate the light emission uniformity of the lamp board under three typical values of h1 / P.
  • the following analyzes the results of simulating the light emission uniformity of the lamp board under three typical values of h1 / P.
  • Obvious illuminance wave peaks there are obvious illuminance wave troughs at the excitation light at 5mm, 15mm, 25mm, 35mm. Among them, there is a large difference in power distribution between the peaks and troughs (the gap is close to 3000W / m2), and the unevenness of the excitation light is serious.
  • the uniformity of the illuminance of the light received by the light receiving surface is greater than 75%, the light passes through the light emitting layer 13 (which may include quantum dots QD (quantum dots)).
  • the display after the material) or the diffusion layer 18 (as shown in FIG. 10 will be described later) will be more uniform, which is basically acceptable to the human eye. Therefore, h1 and P satisfy the following conditions: h1 / P ⁇ 0.6.
  • the light board further includes a packaging structure 15.
  • the packaging structure 15 is disposed on the substrate 10 around the outer sides of the transparent colloid layer 12, the light-emitting layer 13, and the water-oxygen barrier layer 14. In some embodiments, the packaging structure 15 is in direct contact with the outer sides of the transparent colloid layer 12, the light-emitting layer 13, and the water-oxygen barrier layer 14.
  • the packaging structure 15 is a colloid with high water-oxygen barrier properties, and the gap between the molecular chains is small (so as to play the role of water-oxygen barrier).
  • the encapsulation structure 15 includes a water-oxygen barrier material.
  • the colloid of the encapsulation structure 15 is mixed with particles having a water-oxygen barrier function, such as silicon dioxide, and metal particles, such as aluminum, that react with oxygen.
  • the water-oxygen barrier layer 14 and the packaging structure 15 package a plurality of light source chips 11, the colloidal layer 12, and the light-emitting layer 13. Since the package structure 15 includes a water-oxygen barrier material, the water-oxygen barrier layer 14 and the packaging structure 15 achieves a water-oxygen barrier to the light-emitting layer 13.
  • the height of the packaging structure 15 is h3, and the thickness between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light emitting layer 13 is in contact with the water and oxygen barrier layer 14 is h2, h3 And h2 satisfy the following conditions: h3 ⁇ h2. In this way, it is ensured that the light-emitting layer 13 is in a water-oxygen barrier environment sealed by the water-oxygen barrier layer 14, the packaging structure 15, and the substrate 10.
  • the water-oxygen barrier layer 14 is further provided with a protective layer 17, and the packaging structure 15 is disposed around the outer side of the protective layer 17.
  • the protective layer 17 may be formed of epoxy resin or silicone.
  • a light diffusion layer 18 is further provided between the transparent colloid layer 12 and the light-emitting layer 13, and the light diffusion layer 18 is configured to emit light from the multiple light source chips 11. The light diffuses to the light emitting layer 13.
  • the light diffusion layer 18 is made of a transparent material mixed with scattering particles.
  • the transparent material includes any one of the following materials: epoxy resin and colloidal silica; the scattering particles include any one of the following materials: titanium dioxide and Silicon dioxide.
  • the distance between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light diffusion layer 18 and the colloid layer 12 are in contact is h4.
  • Two adjacent ones in the same row or column The distance between the centers of the light source chips is P, and h4 and P satisfy the following conditions: h4 / P ⁇ 0.6.
  • the distance between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light diffusion layer 18 and the light emitting layer 13 are in contact is h4. Since the light emitting layer 13 is disposed on the light diffusion layer 18 Away from the colloidal layer 12, so the distance h3 between each Mini-LED chip and the light-emitting layer 13 is greater than the distance h4.
  • h4 / P ⁇ 0.6 it can be guaranteed that h3 / P> 0.6, so it can guarantee all
  • the uniformity of the light emission of the lamp board is described so that the uniformity can reach a level acceptable to the human eye.
  • some embodiments of the present disclosure further provide a backlight module, including: a back plate 1101;
  • the light plate 1102 is disposed on the back plate 1101.
  • the light plate 1102 is the light plate described above.
  • some embodiments of the present disclosure provide a display device 1000 including the above-mentioned backlight module.
  • a liquid crystal display panel is disposed on a light emitting side of the backlight module.
  • the display device 1000 may be a display device such as an electronic paper, a mobile phone, a television, a digital photo frame, and the like.

Abstract

A light panel, comprising: a substrate; multiple light source chips, the multiple light source chips being arranged on the substrate in an array; an adhesive layer, the adhesive layer covering the multiple light source chips; a light-emitting layer, the light-emitting layer being arranged on a side, away from the multiple light source chips, of the adhesive layer, and the light-emitting layer being configured to be excited by light emitted by the multiple light source chips to generate excitation light; and a water-oxygen barrier layer, the water-oxygen barrier layer being arranged on a side, away from the adhesive layer, of the light-emitting layer.

Description

灯板、背光模组和显示装置Light board, backlight module and display device
本申请要求于2018年07月27日提交中国专利局、申请号为201810845522.X、名称为“一种灯板、背光模组和显示装置”的中国专利申请的优先权和权益,其全部内容通过引用结合在本申请中。This application claims the priority and rights of the Chinese patent application filed with the Chinese Patent Office on July 27, 2018, with application number 201810845522.X, and entitled "A kind of light board, backlight module and display device". Incorporated by reference in this application.
技术领域Technical field
本公开涉及光电器件领域,尤其涉及一种灯板、背光模组和显示装置。The present disclosure relates to the field of optoelectronic devices, and in particular, to a light board, a backlight module, and a display device.
背景技术Background technique
极致发光二极管Mini-LED(Mini-Light Emitting Diode)芯片单个边的大小介于100-200μm之间,Mini-LED芯片用在直下式背光模组中,可实现区域调光,将比一般侧入式背光模组具备更好的透光均匀度以及更高的对比度和更多明暗细节。在使用Mini-LED芯片的背光电视中,相邻两个Mini-LED芯片的间距小,混光均匀,可以去除厚重的传统电视背光膜片,降低混光距离,实现超薄模组设计,其模组厚度可以媲美OLED模组的厚度。The size of a single side of a Mini-LED (Mini-Light Emitting Diode) chip is between 100-200 μm. The Mini-LED chip is used in a direct-lit backlight module, which can achieve area dimming, which will be more side-by-side than normal. The backlight module has better light transmission uniformity, higher contrast and more light and dark details. In a backlit TV using Mini-LED chips, the distance between two adjacent Mini-LED chips is small and the light is mixed uniformly. It can remove the thick traditional TV backlight film, reduce the light mixing distance, and realize ultra-thin module design. The module thickness is comparable to the thickness of an OLED module.
发明内容Summary of the Invention
第一方面,本公开一些实施例提供了一种灯板,包括:In a first aspect, some embodiments of the present disclosure provide a light board, including:
基板;多个光源芯片,所述多个光源芯片以阵列方式设置于所述基板上;胶体层,所述胶体层覆盖所述多个光源芯片;发光层,所述发光层设置于所述胶体层远离所述多个光源芯片的一侧,所述发光层配置为受所述多个光源芯片发出的光的激发而产生激发光;水氧阻隔层,所述水氧阻隔层设置于所述发光层远离所述胶体层的一侧。A substrate; a plurality of light source chips, the plurality of light source chips being arranged on the substrate in an array manner; a colloid layer, the colloid layer covering the plurality of light source chips; a light emitting layer, the light emitting layer being provided on the colloid A side away from the plurality of light source chips, the light emitting layer is configured to generate excitation light by being excited by light emitted from the plurality of light source chips; a water-oxygen barrier layer, the water-oxygen barrier layer is disposed on the The light emitting layer is on a side far from the colloid layer.
第二方面,本公开一些实施例提供了一种背光模组,包括:背板;灯板,所述灯板设置在所述背板上,所述灯板为上述的灯板。In a second aspect, some embodiments of the present disclosure provide a backlight module, including: a back plate; a light plate, the light plate is disposed on the back plate, and the light plate is the above-mentioned light plate.
第三方面,本公开一些实施例提供了一种显示装置,包括上述的背光模组。According to a third aspect, some embodiments of the present disclosure provide a display device including the above-mentioned backlight module.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本公开实施例或相关技术中的技术方案,下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings in the following description are only Some of the disclosed embodiments can be obtained by those skilled in the art based on these drawings without paying any creative work.
图1为根据本公开一些实施例的灯板的一种结构示意图;1 is a schematic structural diagram of a light board according to some embodiments of the present disclosure;
图2为图1所示灯板中的LED芯片的结构示意图;2 is a schematic structural diagram of an LED chip in the lamp board shown in FIG. 1;
图3为根据本公开一些实施例的灯板的发光均匀性模拟图一;FIG. 3 is a first simulation view of light emission uniformity of a lamp board according to some embodiments of the present disclosure; FIG.
图4为根据本公开一些实施例的灯板的发光均匀性曲线图一;FIG. 4 is a light emission uniformity curve diagram I of a lamp board according to some embodiments of the present disclosure; FIG.
图5为根据本公开一些实施例的灯板的发光均匀性模拟图二;FIG. 5 is a second simulation diagram of the light emission uniformity of a lamp board according to some embodiments of the present disclosure; FIG.
图6为根据本公开一些实施例的灯板的发光均匀性曲线图二;FIG. 6 is a second light emission uniformity curve diagram 2 of a lamp board according to some embodiments of the present disclosure; FIG.
图7为根据本公开一些实施例的灯板的发光均匀性模拟图三;FIG. 7 is a third simulation diagram of the light emission uniformity of the lamp board according to some embodiments of the present disclosure; FIG.
图8为根据本公开一些实施例的灯板的发光均匀性曲线图三;FIG. 8 is a light emission uniformity curve diagram III of a lamp board according to some embodiments of the present disclosure; FIG.
图9为根据本公开一些实施例的灯板的另一种结构示意图;FIG. 9 is another schematic structural diagram of a light board according to some embodiments of the present disclosure; FIG.
图10为根据本公开一些实施例的背光模组的结构示意图;10 is a schematic structural diagram of a backlight module according to some embodiments of the present disclosure;
图11为根据本公开一些实施例的一种显示装置的示意图。FIG. 11 is a schematic diagram of a display device according to some embodiments of the present disclosure.
具体实施方式detailed description
下面将结合本公开实施例中的附图,对本公开实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本公开一部分实施例,而不是全部的实施例。基于本公开中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本公开保护的范围。The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, but not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by a person having ordinary skill in the art without making creative efforts fall within the protection scope of the present disclosure.
在本公开的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本公开和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本公开的限制。In the description of this disclosure, it needs to be understood that the terms "center", "up", "down", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inside", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing this disclosure and simplifying the description, and are not intended to indicate or imply The device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.
本公开的一些实施例提供了一种灯板。如图1所示,所述灯板包 括:基板10、多个光源芯片11、胶体层12、发光层13以及水氧阻隔层14。Some embodiments of the present disclosure provide a light board. As shown in FIG. 1, the lamp board includes a substrate 10, a plurality of light source chips 11, a colloid layer 12, a light emitting layer 13, and a water-oxygen barrier layer 14.
所述基板10可以采用水氧阻隔性能较好的材料,例如铝基板。The substrate 10 may be made of a material with better water and oxygen barrier properties, such as an aluminum substrate.
所述多个光源芯片11以阵列方式设置于基板10上。所述多个光源芯片11中的每个光源芯片11可以为LED芯片,例如Mini-LED芯片,其额定电压为3V左右,工作电流为20-50mA。所述Mini-LED芯片单个边的尺寸一般控制在100-200μm,一个典型的Mini-LED芯片的尺寸为长(200μm)×宽(100μm)×高(80μm)。The plurality of light source chips 11 are arranged on the substrate 10 in an array manner. Each of the plurality of light source chips 11 may be an LED chip, such as a Mini-LED chip, with a rated voltage of about 3V and an operating current of 20-50 mA. The size of a single side of the Mini-LED chip is generally controlled at 100-200 μm, and the size of a typical Mini-LED chip is length (200 μm) × width (100 μm) × height (80 μm).
在一些实施例中,如图2所示,所述LED芯片的结构包括:自上至下排布的光学出光膜系统116、衬底111、外延发光层112、DBR反光层(distributed Bragg reflection,分布式布拉格反光层)115、以及位于同一平面内的N电极113和P电极114。DBR反光层115能够避免后向散射的光线损失,DBR反光层115不限于设置在外延发光层112的下方,其设置位置还有其他可选位置,例如衬底111与外延发光层112之间,本公开不做限定。光学出光膜系统116具有增透作用,所述LED芯片的结构也可以不包括光学出光膜系统116。In some embodiments, as shown in FIG. 2, the structure of the LED chip includes: an optical light emitting film system 116, a substrate 111, an epitaxial light emitting layer 112, a DBR reflective layer (distributed Bragg reflection, Distributed Bragg reflectors) 115, and N electrodes 113 and P electrodes 114 located in the same plane. The DBR reflective layer 115 can avoid the loss of backscattered light. The DBR reflective layer 115 is not limited to being disposed under the epitaxial light emitting layer 112, and there are other optional positions for the setting position, such as between the substrate 111 and the epitaxial light emitting layer 112. This disclosure is not limited. The optical light emitting film system 116 has an anti-reflection effect, and the structure of the LED chip may not include the optical light emitting film system 116.
所述胶体层12覆盖所述多个光源芯片11,用于保护所述多个光源芯片11。所述胶体层12为透明胶体层,能够使所述多个光源芯片11发出的光透过。所述胶体层12一般采用透光性好且可固化的材质,如环氧树脂等。The colloid layer 12 covers the plurality of light source chips 11 for protecting the plurality of light source chips 11. The colloid layer 12 is a transparent colloid layer, and can transmit light emitted by the plurality of light source chips 11. The colloid layer 12 is generally made of a material with good light transmission and curability, such as epoxy resin.
所述发光层13设置于所述胶体层12远离所述多个光源芯片11的一侧,所述发光层13配置为受所述多个光源芯片11发出的光的激发而产生激发光。所述多个光源芯片11中的一些光源芯片11配置为发射第一波长的光,所述多个光源芯片11中的另一些光源芯片11配置为发射第二波长的光。第一波长与第二波长可以相同,也可以不同。例如,当第一波长与第二波长相同时,第一波长的光和第二波长的光均可以为蓝光。例如,当第一波长与第二波长不同时,第一波长的光为蓝光、第二波长的光为红光;或者第一波长的光为蓝光、第二波长的光为绿光。The light-emitting layer 13 is disposed on a side of the colloid layer 12 remote from the light source chips 11. The light-emitting layer 13 is configured to be excited by light emitted from the light source chips 11 to generate excitation light. Some of the plurality of light source chips 11 are configured to emit light of a first wavelength, and some of the plurality of light source chips 11 are configured to emit light of a second wavelength. The first wavelength and the second wavelength may be the same or different. For example, when the first wavelength is the same as the second wavelength, both the light of the first wavelength and the light of the second wavelength may be blue light. For example, when the first wavelength is different from the second wavelength, the light of the first wavelength is blue and the light of the second wavelength is red; or the light of the first wavelength is blue and the light of the second wavelength is green.
所述激发光包括至少一种与所述第一波长的光和所述第二波长的 光均不相同的光。例如,当第一波长的光和第二波长的光均为蓝光时,所述激发光可以包括红光和绿光;当第一波长的光和第二波长的光均为紫外光时,所述激发光可以包括蓝光、红光和绿光。例如,当第一波长的光为蓝光、第二波长的光为红光时,所述激发光包括绿光;当第一波长的光为蓝光、第二波长的光为绿光时,所述激发光包括红光。所述激发光和所述多个光源芯片11发出的第一波长的光以及第二波长的光混合形成混合光。The excitation light includes at least one kind of light different from the light of the first wavelength and the light of the second wavelength. For example, when the light of the first wavelength and the light of the second wavelength are both blue light, the excitation light may include red light and green light; when the light of the first wavelength and light of the second wavelength are both ultraviolet light, The excitation light may include blue light, red light, and green light. For example, when the light of the first wavelength is blue light and the light of the second wavelength is red light, the excitation light includes green light; when the light of the first wavelength is blue light and the light of the second wavelength is green light, the The excitation light includes red light. The excitation light is mixed with light of a first wavelength and light of a second wavelength emitted by the plurality of light source chips 11 to form mixed light.
发光层13包含量子点材料或荧光材料。在一些实施例中,当所述多个光源芯片11均产生蓝光时(蓝光的峰值波长范围在440nm~470nm),对应地,发光层13包含的量子点材料为红绿量子点混合材料。蓝光激发发光层13中的红色量子点材料发出峰值波长范围在610nm~650nm的红色光线;并且,蓝光激发发光层13中的绿色量子点材料发出峰值波长范围在520nm~550nm的绿色光线;这样通过红绿蓝三原色的光线混和形成混合光,例如:白光。在一些实施例中,当所述多个光源芯片11产生紫外光时,所述发光层13包含的量子点材料为红绿蓝量子点混合材料。The light emitting layer 13 includes a quantum dot material or a fluorescent material. In some embodiments, when the plurality of light source chips 11 each generate blue light (the peak wavelength range of blue light is in the range of 440 nm to 470 nm), correspondingly, the quantum dot material included in the light emitting layer 13 is a red-green quantum dot mixed material. The red quantum dot material in the blue excitation light emitting layer 13 emits red light having a peak wavelength range of 610 nm to 650 nm; and the green quantum dot material in the blue excitation light emitting layer 13 emits green light having a peak wavelength range of 520 to 550 nm; The red, green, and blue primary colors are mixed to form a mixed light, such as white light. In some embodiments, when the plurality of light source chips 11 generate ultraviolet light, the quantum dot material included in the light emitting layer 13 is a red-green-blue quantum dot mixed material.
在制作发光层13时,所述量子点材料被混合在胶体(如环氧树脂)中,之后混合有所述量子点材料的所述胶体被涂布在胶体层12远离所述多个光源芯片11的一侧(即,混合有所述量子点材料的所述胶体被涂布在胶体层12的出光侧)。When the light emitting layer 13 is manufactured, the quantum dot material is mixed in a colloid (such as epoxy resin), and then the colloid mixed with the quantum dot material is coated on the colloid layer 12 away from the light source chips. One side of 11 (that is, the colloid in which the quantum dot material is mixed is coated on the light exit side of the colloid layer 12).
所述水氧阻隔层14设置于发光层13远离所述胶体层12的一侧,也即所述水氧阻隔层14设置于发光层13的出光侧。所述水氧阻隔层14从所述发光层13的上部保护发光层13。所述水氧阻隔层14为沉积在发光层13上的水氧阻隔层。例如,所述水氧阻隔层14可以通过蒸镀或者溅射的方法在发光层13上沉积二氧化硅或者三氧化二铝而形成。相比于先在PET(Polyethylene terephthalate,聚对苯二甲酸类塑料)基材上制作水氧阻隔膜,之后再将该水氧阻隔膜连同PET基材一起贴附到发光层23上而形成的水氧阻隔层,本公开一些实施例利用沉积方法形成的水氧阻隔层14具有更小的厚度和更致密的材料结构,进而使得所述灯板具有更小的厚度。The water-oxygen barrier layer 14 is disposed on a side of the light-emitting layer 13 away from the colloid layer 12, that is, the water-oxygen barrier layer 14 is disposed on a light-emitting side of the light-emitting layer 13. The water-oxygen barrier layer 14 protects the light-emitting layer 13 from above the light-emitting layer 13. The water-oxygen barrier layer 14 is a water-oxygen barrier layer deposited on the light-emitting layer 13. For example, the water-oxygen barrier layer 14 can be formed by depositing silicon dioxide or aluminum trioxide on the light-emitting layer 13 by evaporation or sputtering. Compared with the method in which a water and oxygen barrier film is firstly fabricated on a PET (Polyethylene terephthalate) substrate, and then the water and oxygen barrier film is attached to the light emitting layer 23 together with the PET substrate. Water and oxygen barrier layer. In some embodiments of the present disclosure, the water and oxygen barrier layer 14 formed by a deposition method has a smaller thickness and a denser material structure, so that the lamp board has a smaller thickness.
在本公开一些实施例中,仅在发光层13远离胶体层12的上表面上设置了水氧阻隔层14,而无需在发光层13的上下两个表面各设置一个水氧阻隔层,因此进一步降低了灯板的厚度。In some embodiments of the present disclosure, the water and oxygen barrier layer 14 is provided only on the upper surface of the light emitting layer 13 away from the colloidal layer 12, and there is no need to provide a water and oxygen barrier layer on the upper and lower surfaces of the light emitting layer 13, so further Reduced thickness of light board.
在一些实施例中,如图1所示,基板10与多个光源芯片11接触的表面到所述发光层13与透明胶体层12接触的表面之间的距离为h1,同一行或者同一列中相邻的两个光源芯片11之间的距离为P,如图1所示相邻两个光源芯片11之间的距离P可以为相邻两个光源芯片的中心之间的距离。h1满足如下条件:120μm≤h1≤6mm;P满足如下条件:200μm≤P≤10mm。其中,由于Mini-LED芯片的发光功率较小(额定电压为3V左右,工作电流20-50mA),其温度较低,对发光层中的量子点材料的热稳定性影响不大,所以基板10与多个光源芯片11接触的表面到所述发光层13与胶体层12接触的表面之间的距离h1可选择较小的数值,例如h1的最小值可以取120μm。In some embodiments, as shown in FIG. 1, the distance between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light-emitting layer 13 is in contact with the transparent colloid layer 12 is h1, in the same row or the same column The distance between two adjacent light source chips 11 is P. As shown in FIG. 1, the distance P between two adjacent light source chips 11 may be the distance between the centers of two adjacent light source chips. h1 satisfies the following conditions: 120 μm ≦ h1 ≦ 6 mm; P satisfies the following conditions: 200 μm ≦ P ≦ 10 mm. Among them, since the light emitting power of the Mini-LED chip is small (the rated voltage is about 3V, the working current is 20-50mA), its temperature is low, and it has little effect on the thermal stability of the quantum dot material in the light-emitting layer. The distance h1 between the surface in contact with the plurality of light source chips 11 and the surface in contact with the light-emitting layer 13 and the colloidal layer 12 may be selected to be a small value, for example, the minimum value of h1 may be 120 μm.
Mini-LED芯片的光强呈朗伯分布,出光角度θ越小,单位面积的光功率也就越高。其中,出光角度θ指出射光线与垂直于所述多个光源芯片所在平面的方向之间的夹角,如图1所示出光角度为出射光线与竖直方向之间的夹角。即,如图1所示,在各个Mini-LED芯片为蓝光LED芯片时,位于某个Mini-LED芯片正上方的量子点材料更容易受到高强度蓝光的照射,而位于出光角度较大位置的量子点材料(例如,两个相邻Mini-LED芯片之间间隔位置处的量子点材料)受到照射的蓝光强度较低,因此发光层13接收的光线也随每个Mini-LED芯片的光强的朗伯分布呈现不均匀性,进而造成激发光的不均匀性。The light intensity of the Mini-LED chip has a Lambertian distribution. The smaller the light exit angle θ, the higher the optical power per unit area. The light output angle θ indicates an included angle between the emitted light and a direction perpendicular to the plane where the multiple light source chips are located. As shown in FIG. 1, the light angle is an included angle between the emitted light and the vertical direction. That is, as shown in FIG. 1, when each Mini-LED chip is a blue light LED chip, the quantum dot material located directly above a certain Mini-LED chip is more susceptible to high-intensity blue light, and the material located at a position where the light emission angle is large. The quantum dot material (for example, a quantum dot material at a spaced position between two adjacent Mini-LED chips) is irradiated with a low blue light intensity, so the light received by the light emitting layer 13 also varies with the light intensity of each Mini-LED chip. The Lambertian distribution of ZnO exhibits non-uniformity, which in turn causes non-uniformity of the excitation light.
为此,在本本公开的一些实施例中,通过设置各个Mini-LED芯片与发光层13的距离h1与相邻的两个Mini-LED芯片中心之间的距离P之比h1/P的合理取值,能够使相邻两个Mini-LED芯片之间间隔位置处的光线在发光层13中进行叠加,从而增加相邻两个Mini-LED芯片之间间隔位置处的光强,削弱Mini-LED芯片光强朗伯分布的不均匀性,提高激发光的均匀性。For this reason, in some embodiments of the present disclosure, a reasonable ratio of the ratio h1 / P between the distance h1 of each Mini-LED chip and the light-emitting layer 13 and the distance P between the centers of two adjacent Mini-LED chips is set. Value, the light at the space between two adjacent Mini-LED chips can be superimposed in the light-emitting layer 13, thereby increasing the light intensity at the space between two adjacent Mini-LED chips and weakening the Mini-LED. The unevenness of Lambertian distribution of chip light intensity improves the uniformity of excitation light.
例如,在将各个Mini-LED芯片与发光层13的距离h1设置得较大 的情况下,或者在将相邻两个Mini-LED芯片的中心之间的距离P设置得较小的情况下,相邻的两个Mini-LED芯片的光线在该相邻两个Mini-LED芯片之间的间隔位置处具有较大的重叠区域,因此相邻两个Mini-LED芯片之间间隔位置处的光强能够得以增加,进而能够提高所述灯板的发光均匀性。在将各个Mini-LED芯片与发光层13的距离h1设置得较小的情况下,或者在将相邻两个Mini-LED芯片的中心之间的距离P设置得较大的情况下,相邻的两个Mini-LED芯片的光线在该相邻两个Mini-LED芯片之间的间隔位置处具有较小的重叠区域,因此相邻两个Mini-LED芯片之间间隔位置处的光强不能得到有效增加,进而难以提高所述灯板的发光均匀性。For example, when the distance h1 between each Mini-LED chip and the light-emitting layer 13 is set to be large, or when the distance P between the centers of two adjacent Mini-LED chips is set to be small, The light rays of two adjacent Mini-LED chips have a large overlapping area at the interval position between the two adjacent Mini-LED chips, so the light at the interval positions between two adjacent Mini-LED chips The strength can be increased, which can further improve the light emitting uniformity of the lamp plate. When the distance h1 between each Mini-LED chip and the light-emitting layer 13 is set to be small, or when the distance P between the centers of two adjacent Mini-LED chips is set to be large, the adjacent The light of the two Mini-LED chips has a small overlapping area at the interval position between the two adjacent Mini-LED chips, so the light intensity at the interval position between the two adjacent Mini-LED chips cannot be It is effectively increased, and it is difficult to improve the uniformity of light emission of the lamp plate.
基于上述的原理,本公开的一些实施例在h1/P的三个典型的取值下对灯板的发光均匀性进行了模拟。Based on the above principles, some embodiments of the present disclosure simulate the light emission uniformity of the lamp board under three typical values of h1 / P.
图3和图4提供了当h1/P=0.4时灯板的发光均匀性的模拟图,其中图3示出了灯板单位面积的功率分布,横轴为X(单位mm),纵轴为Z(单位mm),功率分布单位为W/㎡;图4示出了灯板水平和垂直方向的功率曲线,其中横轴为水平坐标X或垂直坐标Z(单位mm),纵轴为功率(单位W)。Figures 3 and 4 provide simulation diagrams of the light-emitting uniformity of the lamp plate when h1 / P = 0.4, where Figure 3 shows the power distribution per unit area of the lamp plate, the horizontal axis is X (unit mm), and the vertical axis is Z (unit mm), the unit of power distribution is W / ㎡; Figure 4 shows the horizontal and vertical power curves of the lamp panel, where the horizontal axis is the horizontal coordinate X or the vertical coordinate Z (unit mm), and the vertical axis is the power ( Unit W).
图5和图6提供了当h1/P=0.6时灯板的发光均匀性的模拟图,其中图5示出了灯板单位面积的功率分布,横轴为X(单位mm),纵轴为Z(单位mm),功率分布单位为W/㎡;图6示出了灯板水平和垂直方向的功率曲线,其中横轴为水平坐标X或垂直坐标Z(单位mm),纵轴为功率(单位W)。Figures 5 and 6 provide simulation diagrams of the light-emitting uniformity of the lamp board when h1 / P = 0.6, where Figure 5 shows the power distribution per unit area of the lamp board, the horizontal axis is X (unit mm), and the vertical axis is Z (unit mm), the power distribution unit is W / ㎡; Figure 6 shows the horizontal and vertical power curve of the lamp board, where the horizontal axis is the horizontal coordinate X or the vertical coordinate Z (unit mm), and the vertical axis is the power ( Unit W).
如图7和图8提供了当h1/P=0.8时灯板的发光均匀性的模拟图,其中图7示出了灯板单位面积的功率分布,横轴为X(单位mm),纵轴为Z(单位mm),功率分布单位为W/㎡;图8示出了灯板水平和垂直方向的功率曲线,其中横轴为水平坐标X或垂直坐标Z(单位mm),纵轴为功率(单位W)。Figures 7 and 8 provide simulation diagrams of the uniformity of light emission of the lamp board when h1 / P = 0.8, where Figure 7 shows the power distribution per unit area of the lamp board, the horizontal axis is X (unit mm), and the vertical axis Is Z (unit mm), and the power distribution unit is W / ㎡; Figure 8 shows the horizontal and vertical power curves of the lamp panel, where the horizontal axis is the horizontal coordinate X or the vertical coordinate Z (unit mm), and the vertical axis is the power (Unit W).
下面分析在h1/P的三个典型的取值下对灯板的发光均匀性进行模拟的结果。The following analyzes the results of simulating the light emission uniformity of the lamp board under three typical values of h1 / P.
如图3和图4所示,当h1/P=0.4时,h1取值较小,而P取值较大,此时由于相邻的两个光源芯片11距离较远,因此在发光层13中与相邻的两个光源芯片11之间的间隔位置对应的光线交叠区域较小,因此在发光层13中与该相邻的两个光源芯片11之间间隔位置对应的区域中产生的激发光的强度较小。如图4所示,由所述灯板上的经过相应光源芯片中心的垂直截面上的光照强度分布以及水平截面上的光照度分布可以看出,在0mm、10mm、20mm、30mm处的激发光存在明显的光照度波峰,在5mm、15mm、25mm、35mm处的激发光存在明显的光照度波谷。其中,波峰和波谷的功率分布差距较大(差距接近3000W/㎡),激发光的不均匀性严重。As shown in Figures 3 and 4, when h1 / P = 0.4, the value of h1 is small and the value of P is large. At this time, because the two adjacent light source chips 11 are far away, the light emitting layer 13 The light overlapping area corresponding to the spaced position between two adjacent light source chips 11 is relatively small. Therefore, the light emitting layer 13 is generated in the area corresponding to the spaced position between the two adjacent light source chips 11. The intensity of the excitation light is small. As shown in FIG. 4, from the light intensity distribution on the vertical cross section of the light board passing through the center of the corresponding light source chip and the light intensity distribution on the horizontal cross section, it can be seen that the excitation light at 0 mm, 10 mm, 20 mm, and 30 mm exists. Obvious illuminance wave peaks, there are obvious illuminance wave troughs at the excitation light at 5mm, 15mm, 25mm, 35mm. Among them, there is a large difference in power distribution between the peaks and troughs (the gap is close to 3000W / ㎡), and the unevenness of the excitation light is serious.
如图5和图6所示,当h1/P=0.6时,意味着h1取值变大和/或P取值变小,此时在发光层13中与相邻的两个光源芯片11之间的间隔位置对应的光线交叠区域变大,由于激发光的功率叠加的范围变大,因此如图6所示,在0mm、10mm、20mm、30mm处激发光的光照度波峰与在5mm、15mm、25mm、35mm处激发光的光照度波谷差距变小,激发光的不均匀程度减小(差距接近2000W/㎡)。As shown in FIG. 5 and FIG. 6, when h1 / P = 0.6, it means that the value of h1 becomes larger and / or the value of P becomes smaller. At this time, between the light emitting layer 13 and two adjacent light source chips 11 The overlapping area of the light corresponding to the interval position becomes larger, and because the range of the superimposed power of the excitation light becomes larger, as shown in Fig. 6, the illuminance peaks of the excitation light at 0mm, 10mm, 20mm, 30mm and At 25mm and 35mm, the gap between the illumination intensity troughs of the excitation light becomes smaller, and the unevenness of the excitation light is reduced (the difference is close to 2000W / ㎡).
如图7和图8所示,当h1/P=0.8时,相当于h1取值进一步变大和/或P取值进一步变小,此时在发光层13中与相邻的两个光源芯片11之间的间隔位置对应的光线交叠区域进一步变大,由于激发光的功率叠加的范围继续变大,因此如图8所示,在0mm、10mm、20mm、30mm处激发光的光照度波峰与在5mm、15mm、25mm、35mm处激发光的光照度波谷差距进一步变小(差距接近1500W/㎡),激发光的不均匀程度进一步减小,而且在0-30mm的区域内的激发光分布可以等同于均匀分布。As shown in FIG. 7 and FIG. 8, when h1 / P = 0.8, it is equivalent to further increasing the value of h1 and / or further decreasing the value of P. At this time, the two light source chips 11 adjacent to each other in the light-emitting layer 13 The overlapping area of the light corresponding to the spaced position between them is further enlarged. As the range of the superimposed power of the excitation light continues to increase, as shown in Fig. 8, the illuminance peaks of the excitation light at 0mm, 10mm, 20mm, and 30mm and the The gap between the illumination intensity troughs of the excitation light at 5mm, 15mm, 25mm, and 35mm is further reduced (the gap is close to 1500W / ㎡), the unevenness of the excitation light is further reduced, and the excitation light distribution in the region of 0-30mm can be equivalent to Evenly distributed.
由上面对模拟结果的分析可知,h1/P=0.6时,发光层13的光接收面(即发光层13的靠近所述透明胶体层12的表面)的光照度已经较为均匀,光照度的最小值/最大值=7000/9200≈76%>75%,一般而言,光接收面接收到的光的光照度的均匀性大于75%时,光经过发光层13(可以包含量子点QD(quantum dots)材料)或者扩散层18(如图10所示, 将在后文中描述)后的显示会更加均匀,人眼基本可以接受。因此h1与P满足如下条件:h1/P≥0.6。From the analysis of the simulation results above, it can be known that when h1 / P = 0.6, the light intensity of the light receiving surface of the light-emitting layer 13 (that is, the surface of the light-emitting layer 13 near the transparent colloid layer 12) is relatively uniform, and the minimum value of the light intensity is / Maximum = 7000 / 9200≈76%> 75%. In general, when the uniformity of the illuminance of the light received by the light receiving surface is greater than 75%, the light passes through the light emitting layer 13 (which may include quantum dots QD (quantum dots)). The display after the material) or the diffusion layer 18 (as shown in FIG. 10 will be described later) will be more uniform, which is basically acceptable to the human eye. Therefore, h1 and P satisfy the following conditions: h1 / P≥0.6.
在本公开一些实施例中,如图9所示,所述灯板还包括封装结构15。所述封装结构15围绕透明胶体层12、发光层13和水氧阻隔层14的外侧面而设置在基板10上。在一些实施例中,所述封装结构15与透明胶体层12、发光层13和水氧阻隔层14的外侧面直接接触。所述封装结构15为具有较高水氧阻隔特性的胶体,其分子链间的间隙较小(以便起到水氧阻隔作用)。所述封装结构15包含水氧阻隔材料,例如,封装结构15的胶体内部混合有具有水氧阻隔作用的粒子,如二氧化硅,并且混合有与氧气反应的金属粒子,如铝。In some embodiments of the present disclosure, as shown in FIG. 9, the light board further includes a packaging structure 15. The packaging structure 15 is disposed on the substrate 10 around the outer sides of the transparent colloid layer 12, the light-emitting layer 13, and the water-oxygen barrier layer 14. In some embodiments, the packaging structure 15 is in direct contact with the outer sides of the transparent colloid layer 12, the light-emitting layer 13, and the water-oxygen barrier layer 14. The packaging structure 15 is a colloid with high water-oxygen barrier properties, and the gap between the molecular chains is small (so as to play the role of water-oxygen barrier). The encapsulation structure 15 includes a water-oxygen barrier material. For example, the colloid of the encapsulation structure 15 is mixed with particles having a water-oxygen barrier function, such as silicon dioxide, and metal particles, such as aluminum, that react with oxygen.
该水氧阻隔层14与封装结构15一起对多个光源芯片11、胶体层12和发光层13进行封装,由于封装结构15中包含了水氧阻隔材料,因此通过水氧阻隔层14与封装结构15实现了对发光层13的水氧阻隔。The water-oxygen barrier layer 14 and the packaging structure 15 package a plurality of light source chips 11, the colloidal layer 12, and the light-emitting layer 13. Since the package structure 15 includes a water-oxygen barrier material, the water-oxygen barrier layer 14 and the packaging structure 15 achieves a water-oxygen barrier to the light-emitting layer 13.
此外,如图9所示,所述封装结构15的高度为h3,基板10与多个光源芯片11接触的表面到发光层13与水氧阻隔层14接触的表面之间的厚度为h2,h3和h2满足如下条件:h3≥h2。这样保证发光层13处于被水氧阻隔层14、封装结构15以及基板10密封的水氧阻隔的环境中。In addition, as shown in FIG. 9, the height of the packaging structure 15 is h3, and the thickness between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light emitting layer 13 is in contact with the water and oxygen barrier layer 14 is h2, h3 And h2 satisfy the following conditions: h3≥h2. In this way, it is ensured that the light-emitting layer 13 is in a water-oxygen barrier environment sealed by the water-oxygen barrier layer 14, the packaging structure 15, and the substrate 10.
在一些实施例中,如图9所示,所述水氧阻隔层14上还设置有保护层17,所述封装结构15围绕所述保护层17的外侧面设置。所述保护层17可以由环氧树脂或者硅胶形成。In some embodiments, as shown in FIG. 9, the water-oxygen barrier layer 14 is further provided with a protective layer 17, and the packaging structure 15 is disposed around the outer side of the protective layer 17. The protective layer 17 may be formed of epoxy resin or silicone.
在一些实施例中,如图9所示,所述透明胶体层12和发光层13之间还设置有光扩散层18,所述光扩散层18用于将所述多个光源芯片11发出的光线扩散至发光层13。In some embodiments, as shown in FIG. 9, a light diffusion layer 18 is further provided between the transparent colloid layer 12 and the light-emitting layer 13, and the light diffusion layer 18 is configured to emit light from the multiple light source chips 11. The light diffuses to the light emitting layer 13.
所述光扩散层18采用混合有散射粒子的透明材料,所述透明材料包括以下组合中的任一种材料:环氧树脂和硅胶胶体;散射粒子包括以下组合中的任一种材料:二氧化钛和二氧化硅。The light diffusion layer 18 is made of a transparent material mixed with scattering particles. The transparent material includes any one of the following materials: epoxy resin and colloidal silica; the scattering particles include any one of the following materials: titanium dioxide and Silicon dioxide.
在一些实施例中,所述基板10与所述多个光源芯片11接触的表面到光扩散层18与胶体层12接触的表面之间的距离为h4,同一行或者同一列中相邻的两个光源芯片的中心之间的距离为P,h4和P满足如下 条件:h4/P≥0.6。此时所述基板10与所述多个光源芯片11接触的表面到光扩散层18与发光层13接触的表面之间的距离为h4,由于所述发光层13设置在所述光扩散层18的远离所述胶体层12的一侧,因此各个Mini-LED芯片与发光层13之间的距离h3大于距离h4,在h4/P≥0.6时,可以保证h3/P>0.6,因此可以保证所述灯板的发光均匀性,以便该均匀性能够达到人眼所接受的程度。In some embodiments, the distance between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light diffusion layer 18 and the colloid layer 12 are in contact is h4. Two adjacent ones in the same row or column The distance between the centers of the light source chips is P, and h4 and P satisfy the following conditions: h4 / P≥0.6. At this time, the distance between the surface where the substrate 10 is in contact with the plurality of light source chips 11 and the surface where the light diffusion layer 18 and the light emitting layer 13 are in contact is h4. Since the light emitting layer 13 is disposed on the light diffusion layer 18 Away from the colloidal layer 12, so the distance h3 between each Mini-LED chip and the light-emitting layer 13 is greater than the distance h4. When h4 / P≥0.6, it can be guaranteed that h3 / P> 0.6, so it can guarantee all The uniformity of the light emission of the lamp board is described so that the uniformity can reach a level acceptable to the human eye.
参照图10所示,本公开一些实施例还提供了一种背光模组,包括:背板1101;Referring to FIG. 10, some embodiments of the present disclosure further provide a backlight module, including: a back plate 1101;
灯板1102,所述灯板1102设置在所述背板1101上,所述灯板1102为上述的灯板。The light plate 1102 is disposed on the back plate 1101. The light plate 1102 is the light plate described above.
参照图11所示,本公开一些实施例提供了一种显示装置1000,包括上述的背光模组。其中背光模组的出光侧设置有液晶显示面板。该显示装置1000可以为电子纸、手机、电视、数码相框等等显示设备。Referring to FIG. 11, some embodiments of the present disclosure provide a display device 1000 including the above-mentioned backlight module. A liquid crystal display panel is disposed on a light emitting side of the backlight module. The display device 1000 may be a display device such as an electronic paper, a mobile phone, a television, a digital photo frame, and the like.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above is only a specific implementation of the present disclosure, but the scope of protection of the present disclosure is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in the present disclosure. It should be covered by the protection scope of this disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (17)

  1. 一种灯板,包括:A light board includes:
    基板;Substrate
    多个光源芯片,所述多个光源芯片以阵列方式设置于所述基板上;A plurality of light source chips arranged on the substrate in an array manner;
    胶体层,所述胶体层覆盖所述多个光源芯片;A colloidal layer covering the plurality of light source chips;
    发光层,所述发光层设置于所述胶体层远离所述多个光源芯片的一侧,所述发光层配置为受所述多个光源芯片发出的光的激发而产生激发光;A light emitting layer disposed on a side of the colloidal layer remote from the plurality of light source chips, the light emitting layer being configured to be excited by light emitted by the plurality of light source chips to generate excitation light;
    水氧阻隔层,所述水氧阻隔层设置于所述发光层远离所述胶体层的一侧。A water-oxygen barrier layer, which is disposed on a side of the light-emitting layer away from the colloid layer.
  2. 根据权利要求1所述的灯板,其中,The light panel according to claim 1, wherein:
    所述多个光源芯片中的一些光源芯片配置为发射第一波长的光,所述多个光源芯片中的另一些光源芯片配置为发射第二波长的光,所述第一波长与所述第二波长相同或不同;Some light source chips of the plurality of light source chips are configured to emit light of a first wavelength, and other light source chips of the plurality of light source chips are configured to emit light of a second wavelength. The two wavelengths are the same or different;
    所述激发光包括至少一种与所述第一波长的光和所述第二波长的光均不相同的光;The excitation light includes at least one kind of light different from the light of the first wavelength and the light of the second wavelength;
    所述多个光源芯片发射的第一波长的光和第二波长的光、以及所述激发光混合形成混合光。Light of a first wavelength and light of a second wavelength, and the excitation light emitted by the plurality of light source chips are mixed to form mixed light.
  3. 根据权利要求1所述的灯板,其中,所述水氧阻隔层为沉积在所述发光层上的水氧阻隔层。The lamp panel according to claim 1, wherein the water-oxygen barrier layer is a water-oxygen barrier layer deposited on the light-emitting layer.
  4. 根据权利要求1所述的灯板,其中,The light panel according to claim 1, wherein:
    所述基板与所述多个光源芯片接触的表面到所述发光层与所述胶体层接触的表面之间的距离为h1;A distance between a surface where the substrate is in contact with the plurality of light source chips and a surface where the light emitting layer is in contact with the colloid layer is h1;
    相邻的两个光源芯片的中心之间的距离为P;The distance between the centers of two adjacent light source chips is P;
    则h1和P满足如下条件:h1/P≥0.6。Then h1 and P satisfy the following conditions: h1 / P≥0.6.
  5. 根据权利要求4所述的灯板,其中,The light panel according to claim 4, wherein:
    所述h3满足如下条件:120μm≤h1≤6mm;The h3 satisfies the following conditions: 120 μm ≦ h1 ≦ 6mm;
    所述P满足如下条件:200μm≤P≤10mm。The P satisfies the following conditions: 200 μm ≦ P ≦ 10 mm.
  6. 根据权利要求1所述的灯板,还包括封装结构,所述封装结构围绕所述胶体层、所述发光层和所述水氧阻隔层的外侧面而设置在所述基板上。The light board according to claim 1, further comprising a packaging structure provided on the substrate around the outer sides of the colloid layer, the light emitting layer, and the water and oxygen barrier layer.
  7. 根据权利要求6所述的灯板,其中,所述封装结构与所述胶体层、所述发光层和所述水氧阻隔层的外侧面直接接触。The lamp board according to claim 6, wherein the packaging structure is in direct contact with outer sides of the colloid layer, the light-emitting layer, and the water-oxygen barrier layer.
  8. 根据权利要求6或7所述的灯板,其中,所述封装结构包含水氧阻隔材料。The light board according to claim 6 or 7, wherein the packaging structure comprises a water-oxygen barrier material.
  9. 根据权利要求1所述的灯板,还包括:设置于所述水氧阻隔层上的保护层。The lamp board according to claim 1, further comprising: a protective layer disposed on the water-oxygen barrier layer.
  10. 根据权利要求1所述的灯板,还包括:设置于所述胶体层和所述发光层之间的光扩散层,The light board according to claim 1, further comprising: a light diffusion layer disposed between the colloid layer and the light emitting layer,
    其中,所述光扩散层配置为对所述多个光源芯片发出的光线进行扩散,并使扩散后的光线进入所述发光层。Wherein, the light diffusion layer is configured to diffuse light emitted from the plurality of light source chips, and allow the diffused light to enter the light emitting layer.
  11. 根据权利要求10所述的灯板,其中,所述光扩散层采用混合有散射粒子的透明材料。The light board according to claim 10, wherein the light diffusion layer is made of a transparent material mixed with scattering particles.
  12. 根据权利要求11所述的灯板,其中,所述透明材料包括以下组合中的任一种材料:环氧树脂和硅胶胶体。The light board according to claim 11, wherein the transparent material comprises any one of the following combinations: epoxy resin and silicone colloid.
  13. 根据权利要求11所述的灯板,其中,所述散射粒子包括以下组合中的任一种材料:二氧化钛和二氧化硅。The light panel according to claim 11, wherein the scattering particles include any one of the following materials: titanium dioxide and silicon dioxide.
  14. 根据权利要求10所述的灯板,其中,The light panel according to claim 10, wherein:
    所述基板与所述多个光源芯片接触的表面到所述光扩散层与所述胶体层接触的表面之间的距离为h4;The distance between the surface where the substrate is in contact with the plurality of light source chips and the surface where the light diffusion layer is in contact with the colloid layer is h4;
    相邻的两个光源芯片的中心之间的距离为P;The distance between the centers of two adjacent light source chips is P;
    则h4和P满足如下条件:h4/P≥0.6。Then h4 and P satisfy the following conditions: h4 / P≥0.6.
  15. 根据权利要求1-9任一项所述的灯板,每个所述光源芯片单个边的大小为100-200μm。The light board according to any one of claims 1-9, wherein a size of a single side of each of the light source chips is 100-200 μm.
  16. 一种背光模组,包括:A backlight module includes:
    背板;Backplane
    灯板,所述灯板设置在所述背板上,所述灯板为权利要求1-15任一项所述的灯板。The light board is disposed on the back plate, and the light board is the light board according to any one of claims 1-15.
  17. 一种显示装置,包括:A display device includes:
    显示面板;以及Display panel; and
    如权利要求16所述的背光模组。The backlight module according to claim 16.
PCT/CN2019/088545 2018-07-27 2019-05-27 Light panel, backlight module and display apparatus WO2020019856A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150188004A1 (en) * 2013-12-27 2015-07-02 Nichia Corporation Semiconductor light emitting device
CN106410012A (en) * 2015-07-28 2017-02-15 日亚化学工业株式会社 Light emitting device and method of manufacturing the same
US20170054053A1 (en) * 2015-08-21 2017-02-23 Lg Electronics Inc. Light emitting device package assembly and method of fabricating the same
US20180198031A1 (en) * 2017-01-09 2018-07-12 Samsung Electronics Co., Ltd. Light emitting device package, method of manufacturing the same, backlight unit and display device including the same
CN109003967A (en) * 2018-07-27 2018-12-14 青岛海信电器股份有限公司 A kind of lamp plate, backlight module and display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653985A (en) * 2017-02-20 2017-05-10 天津市中环量子科技有限公司 Multi-layer packaged quantum dot LED structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150188004A1 (en) * 2013-12-27 2015-07-02 Nichia Corporation Semiconductor light emitting device
CN106410012A (en) * 2015-07-28 2017-02-15 日亚化学工业株式会社 Light emitting device and method of manufacturing the same
US20170054053A1 (en) * 2015-08-21 2017-02-23 Lg Electronics Inc. Light emitting device package assembly and method of fabricating the same
US20180198031A1 (en) * 2017-01-09 2018-07-12 Samsung Electronics Co., Ltd. Light emitting device package, method of manufacturing the same, backlight unit and display device including the same
CN109003967A (en) * 2018-07-27 2018-12-14 青岛海信电器股份有限公司 A kind of lamp plate, backlight module and display device

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