WO2020029632A1 - Light emitting element, backlight module and display device - Google Patents

Light emitting element, backlight module and display device Download PDF

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Publication number
WO2020029632A1
WO2020029632A1 PCT/CN2019/087267 CN2019087267W WO2020029632A1 WO 2020029632 A1 WO2020029632 A1 WO 2020029632A1 CN 2019087267 W CN2019087267 W CN 2019087267W WO 2020029632 A1 WO2020029632 A1 WO 2020029632A1
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Prior art keywords
light
groove
light emitting
light source
layer
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PCT/CN2019/087267
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French (fr)
Chinese (zh)
Inventor
李富琳
李潇
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青岛海信电器股份有限公司
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Publication of WO2020029632A1 publication Critical patent/WO2020029632A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials

Definitions

  • the present disclosure relates to the field of optoelectronic devices, and in particular, to a light emitting element, a backlight module, and a display device.
  • Mini-LED Fluorescent Light Emitting Diode
  • the size of a single side of the chip is between 100-200 ⁇ m.
  • Mini-LED chips are used as direct-type backlight chips, which can achieve area dimming, which is more than ordinary side-type backlight sources.
  • the chip has better uniformity of light transmission, higher contrast and more light and dark details; in the backlight TV using Mini LED chips, the distance between each Mini LED chip is small and the light is evenly mixed, which can remove the heavy traditional TV
  • the backlight film reduces the mixing distance and realizes the ultra-thin module design. Its module thickness is comparable to that of OLED modules.
  • some embodiments of the present disclosure provide a light emitting element including: a substrate; a plurality of light source chips, the plurality of light source chips being arranged on the substrate in an array manner; and a protective layer covering the multiple Light source chips; and an excited light layer, the excited light layer is disposed on the light emitting surface of the protective layer; wherein a plurality of grooves are arranged on the light emitting surface of the protective layer in a crisscross pattern, and A plurality of crisscrossed grooves define a plurality of light emitting regions, and each of the light emitting regions corresponds to at least one light source chip of the plurality of light source chips; wherein the shape of each of the grooves allows the wall of the groove to reflect The light emitted from the plurality of light source chips to the groove wall of the corresponding groove is refracted to the excited light layer.
  • some embodiments of the present disclosure provide a backlight module including: a back plate; the light-emitting element of the first aspect described above, the light-emitting element is disposed on the back plate.
  • some embodiments of the present disclosure provide a display device including a display panel and the backlight module of the second aspect.
  • FIG. 1 is a schematic structural diagram of a light emitting element provided by the related art
  • FIG. 2 is a schematic structural diagram of a light emitting element according to some embodiments of the present disclosure.
  • FIG. 3 is a schematic plan view of the light-emitting element shown in FIG. 2 according to the present disclosure
  • FIG. 4 is a schematic structural diagram of another light emitting element according to some embodiments of the present disclosure.
  • FIG. 5 is a schematic structural diagram of still another light emitting element according to some embodiments of the present disclosure.
  • FIG. 6 is a schematic structural diagram of a backlight module according to some embodiments of the present disclosure.
  • FIG. 7 is a schematic structural diagram of a display device according to some embodiments of the present disclosure.
  • the direct type backlight module adopts an array-distributed Mini LED as a backlight chip.
  • the direct type backlight module can remove the thick traditional TV backlight film, reduce the light mixing distance, and realize an ultra-thin module design.
  • the module thickness is comparable to the thickness of an OLED module.
  • the packaging method of the LED chip may affect the brightness and light output efficiency of the corresponding positions at the junction of the two LED chips.
  • the packaging method of the LED chip in the related art is: first, a plurality of LED chips 11 are arranged in an array on the substrate 12, and then the substrate 12 is coated with a plurality of LED chips 11 for protection. And a transparent coating 13 supporting the optical film, and an optical film 14 containing a fluorescent powder (or a quantum dot material) is encapsulated on the transparent coating 13, and other optical films 15 are provided on the light-emitting side of the optical film 14.
  • the transparent coating 13 is generally epoxy resin or silica gel, and the refractive index is between 1.4 and 1.5, and the refractive index is greater than the refractive index of the optical film 14.
  • the light emitted by the plurality of LED chips When the light emitted by the plurality of LED chips is emitted to the optical film 14 through the transparent coating layer 13, the light enters the optically sparse medium from the optically dense medium, and the large-angle light that satisfies the condition of total reflection will be totally reflected.
  • n represents the refractive index of the optically dense medium transparent coating layer 13
  • n ' represents the refractive index of the optically sparse medium optical film 14.
  • 43.6 ° can be calculated based on the refractive indices of the materials used in the transparent layer 13 and the optical film 14.
  • the center line perpendicular to the plane of the LED chip and passing through the center of the LED chip is used as a reference.
  • the light emitting angle range of the LED chip is ⁇ 90 ° on both sides of the center line, so the absolute value of the light emitting angle is greater than 43.6 ° light will be totally reflected and cannot be emitted, or it can be emitted after multiple reflections, and large-angle light with an absolute value of the light emission angle greater than 43.6 ° mostly irradiates the position between two adjacent LED chips, making the phase The area between adjacent LED chips is dark, which affects the brightness of the position between adjacent two LED chips and the light output efficiency.
  • the light emitting element includes: a substrate 24, a plurality of light source chips 21, a protective layer 22, and an excited light layer 23; the plurality of light source chips. 21 is arranged on the substrate 24 in an array manner; the protective layer 22 covers the plurality of light source chips 21; the excited light layer 23 is disposed on the light-emitting surface of the protective layer 22, and the excited light layer 23 receives the multiple The light emitted from each light source chip 21 is excited to emit light.
  • a plurality of crisscross grooves 221 are provided on the light-emitting surface of the protective layer 22, and the crisscross grooves 221 define a plurality of light-exiting areas 220, each of which emits light.
  • the region 220 corresponds to at least one light source chip 21 of the plurality of light source chips 21, wherein an opening direction of each groove 221 is directed toward a light emitting direction of the protective layer 22, each groove 221 is hollowed out inside, and each groove 221
  • the shape of the groove wall enables the light beams emitted by the corresponding light source chip 21 to the groove walls 2211 and 2212 of the corresponding groove 221 to be refracted to the excited light layer 23.
  • the large-angle light rays exceeding the critical angle of total reflection emitted by the plurality of light source chips can be irradiated onto the groove wall of the corresponding groove, and because each of the grooves can remove the large-angle light rays exceeding the critical angle of total reflection from the The light-emitting layer is refracted into the air in the corresponding groove, and then refracted by the air into the light-excitation layer. Therefore, large-angle light that exceeds the critical angle of total reflection is prevented from being totally reflected on the light-emitting surface of the protective layer. It can reduce the loss of outgoing light caused by full emission and improve the light emitting efficiency of the light emitting element.
  • each of the plurality of light source chips 21 may be an LED chip, such as a Mini LED chip.
  • the size of the Mini LED chip is generally controlled between 100 and 200 ⁇ m.
  • a typical Mini LED chip Dimensions are length (200 ⁇ m) ⁇ width (100 ⁇ m) ⁇ height (80 ⁇ m), its rated voltage is about 3V, and the working current is 20-50mA.
  • the protective layer 22 may be a transparent colloid, which protects the plurality of light source chips 21.
  • the protective layer 22 is generally made of a material with good light transmission and curability, such as epoxy resin.
  • the excited light layer 23 includes a quantum dot material or a fluorescent material.
  • the substrate 24 may be an aluminum substrate.
  • each of the plurality of light source chips 21 is a blue light or purple light LED chip.
  • the quantum dot material included in the excited light layer 23 is a red-green quantum dot mixed material.
  • the peak wavelength range of blue light is 440 nm to 470 nm; the blue light excites the red quantum dot material to emit red light with a peak wavelength range of 610 nm to 650 nm; blue light The green quantum dot material is excited to emit green light with a peak wavelength in the range of 520nm to 550nm; in this way, the three primary colors of red, green and blue are mixed to form a mixed light, such as white light.
  • the quantum dot material included in the excited light layer 23 is a red-green-blue quantum dot mixed material, and the quantum dot material is mixed in a colloid (such as epoxy resin). Coated on the light exit side of the protective layer 22.
  • an optical film having other functions may be provided on the light-exiting surface of the excited light layer 23, such as a transparent coating, a polarizer, and the like for protecting the excited light layer 23.
  • a distance between two adjacent LED chips 21 is P, and a shape of each of the grooves 221 is symmetrical with respect to a center line of the distance P. .
  • the plurality of light source chips 21 are distributed in a row and column manner.
  • two adjacent rows of light source chips 21 are arranged between two adjacent rows of light source chips 21.
  • the laterally extending grooves 221-a are symmetrical, and the two adjacent rows of light source chips 21 are symmetrical about the vertically extending grooves 221-b between the two adjacent rows of light source chips 21.
  • a direction in which the grooves 221-a extend laterally is parallel to a direction in which the plurality of light source chips 21 are aligned in a row, and a direction in which the grooves 221-2 b extend vertically is in a row direction with the plurality of light source chips 21.
  • the alignments are parallel.
  • the crisscross grooves 221-1a and 221-2b divide the light-emitting surface of the light-emitting layer 22 into four light-emitting regions 220, and a light source chip 21 is disposed in each light-emitting region 220.
  • a light source chip 21 is disposed in each light-emitting region 220.
  • two or more light source chips 21 may be provided in each light emitting area 220.
  • the cross section of the groove 221 has an inverted cone shape, and the groove 221 includes two groove walls 2211 and 2212 inclined with respect to a vertical direction.
  • the two grooves The cross-section of the pattern enclosed by the walls 2211 and 2212 and the excited layer 23 is triangular.
  • the range of the inclination angle ⁇ of each of the two groove walls 2211 and 2212 of the groove 221 is [41.8 °, 45.6 °], that is, 41.8 ° ⁇ ⁇ ⁇ 45.6 °.
  • is the angle between each of the two groove walls 2211 and 2212 of the groove 221 and the vertical direction.
  • the angle between the two groove walls 2211 and 2212 of the groove 221 and the vertical direction may be equal or different.
  • the angles between the two groove walls 2211 and 2212 of the groove 221 and the vertical direction are equal, the two groove walls 2211 and 2212 of the groove 221 are opposite to the bottom of the groove 221 and the light emitting layer 22
  • the light plane is symmetrical to the vertical plane.
  • the light-emitting surface of the protective layer 22 includes groove walls 2211, 2212, and a flat surface 222 of an inversely tapered groove 221.
  • the groove 221 is provided corresponding to one LED chip and another LED chip.
  • the plane 222 is disposed at a position directly above each LED chip.
  • arcsin (1 / n).
  • n the value of the protective layer 22. Refractive index.
  • the groove 221 is not provided, as shown by the dotted arrow in FIG. 2, when the exit angle ⁇ 1 of a ray emitted by a certain light source chip 21 is greater than the above-mentioned critical angle ⁇ , the ray will be totally reflected, Furthermore, it cannot be emitted from the top plane 222 of the protective layer 22.
  • the inverted cone-shaped groove 221 is provided in some implementations of the present disclosure, as shown in FIG. 2, when a light source chip 21 emits a light having an exit angle ⁇ 1, and the exit angle ⁇ 1 is greater than the critical angle ⁇ , the light Total reflection does not occur, but it will irradiate the groove wall 2211 of the inverted tapered groove and further exit from the groove wall 2211.
  • the incident angle of the light at the refracting surface (at the groove wall 2211) is ⁇ .
  • the protective layer 22 is generally epoxy resin or silica gel, and its refractive index is between 1.4 and 1.5.
  • the range of the critical angle for total reflection when light exits from the protective layer 22 into the air in the groove 221 is: 41.8 ° ⁇ ⁇ 45.6.
  • each light source chip 21 In order to ensure that all the light emitted by each light source chip 21 can be emitted from the protective layer 22, it is necessary to make the light having an exit angle ⁇ 1 satisfying the relationship of ⁇ ⁇ ⁇ 1 ⁇ 90 ° to illuminate the groove wall 2211 of the inverted tapered groove 221 , And make the light having the angle ⁇ 1 satisfying the relationship ⁇ 1 ⁇ irradiate on the plane 222 of the protective layer 22.
  • the larger the angle between the groove wall of the inverted tapered groove and the vertical direction the better.
  • ⁇ 1 90 °
  • a cross section enclosed by the groove wall of the groove and the excited layer is rectangular.
  • the groove wall 2211 and the groove wall 2212 of the groove are both parallel to the vertical direction (that is, the inclination angle with respect to the vertical direction is 0)
  • the distance from the light emitting surface of the LED chip to the top light emitting surface of the protective layer 22 is H
  • the height of the LED chip is h2
  • the depth of the groove is h1, H, h1 and h2 satisfy: H ⁇ h1 ⁇ H + h2, then it can be ensured that the light emitted from the LED chip can be irradiated on the groove wall of the groove 221 and refracted on the groove wall.
  • a cross section surrounded by two groove walls 2211, 2212 of the groove 221 of the light-emitting element and the excited light layer 23 is arcuate.
  • a cross section surrounded by two groove walls 2211 and 2212 of the groove 221 and the excited light layer 23 may be semicircular.
  • the range of the inclination angle ⁇ of the outer tangent to each of the two groove walls 2211 and 2212 of the groove 221 is [41.8 °, 45.6 °], that is, 41.8 ° ⁇ ⁇ ⁇ 45.6 °.
  • is the angle between the outer tangent of each of the two groove walls 2211 and 2212 of the groove 221 and the vertical direction.
  • the two groove walls 2211 and 2212 of the groove 221 may be symmetrical or asymmetric with respect to a plane passing through the bottom of the groove 221 and perpendicular to the light emitting surface of the light emitting layer 22.
  • the incident angle ⁇ of the light transmitted to the groove wall 2211 of the arcuate groove 221 gradually increases, so as long as the exit angle of the light emitted by the LED chip is maximized ( 90 °), when the incident angle ⁇ of the light transmitted to the groove wall 2211 of the arcuate groove 221 is smaller than the critical angle ⁇ , the light emitted by the LED can be refracted by the groove wall of the groove 221 without total reflection.
  • H is the distance from the light emitting surface of the LED chip to the top light emitting surface of the protective layer 22
  • h2 is the height of the LED chip
  • h1 is the chord height of the bow-shaped groove (ie, the depth of the groove).
  • a cross section formed by two groove walls 2211, 2212 of the groove 221 of the light-emitting element and the excited light layer 23 is trapezoidal, and the groove 221 further includes a groove. Bottom 2213.
  • the range of the inclination angle ⁇ of each of the two groove walls 2211 and 2212 of the groove 221 is [41.8 °, 45.6 °], that is, 41.8 ° ⁇ ⁇ ⁇ 45.6 °.
  • is the angle between each of the two groove walls 2211 and 2212 of the groove 221 and the vertical direction.
  • the angle between the two groove walls 2211 and 2212 of the groove 221 and the vertical direction may be equal or different.
  • the two groove walls 2211 and 2212 of the groove 221 are relative to the center of the groove bottom 2213 passing through the groove 221 and
  • the light emitting surface of the light-emitting layer 22 is symmetrical in a vertical plane.
  • some embodiments of the present disclosure further provide a backlight module, including: a back plate 51;
  • the light-emitting element 52 provided in the foregoing embodiment is disposed on the back plate 51.
  • some embodiments of the present disclosure provide a display device 6 including the above-mentioned backlight module.
  • a liquid crystal display panel is disposed on a light emitting side of the backlight module.
  • the display device 6 may be a display device such as an electronic paper, a mobile phone, a television, a digital photo frame, or the like.

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
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Abstract

A light emitting element, comprising: a substrate; a plurality of light source chips, arranged on the substrate in an array; a protective layer, covering the plurality of light source chips; and a stimulated luminescence layer, located on a light emitting surface of the protective layer, wherein a plurality of crisscrossing grooves are formed on a light emitting surface of the protective layer, and the plurality of crisscrossing grooves define a plurality of light emitting regions, each of the light emitting regions corresponding to at least one light source chip among the plurality of light source chips; each of the grooves is shaped such that the groove wall thereof may refract light emitted onto the corresponding groove wall of the groove by the plurality of light source chips to the stimulated luminescence layer.

Description

发光元件、背光模组和显示装置Light emitting element, backlight module and display device
本申请要求于2018年08月10日提交中国专利局、申请号为201810910740.7、名称为“一种发光元件、背光模组和显示装置”的中国专利申请的优先权和权益,其全部内容通过引用结合在本申请中。This application claims the priority and rights of the Chinese patent application filed with the Chinese Patent Office on August 10, 2018, with application number 201810910740.7, and entitled "A Light-Emitting Element, Backlight Module and Display Device", the entire contents of which are hereby incorporated by reference Incorporated in this application.
技术领域Technical field
本公开涉及光电器件领域,尤其涉及一种发光元件、背光模组和显示装置。The present disclosure relates to the field of optoelectronic devices, and in particular, to a light emitting element, a backlight module, and a display device.
背景技术Background technique
Mini-LED(英文全称:Mini-Light Emitting Diode)芯片单个边的大小介于100-200μm之间,Mini LED芯片用作直下式背光源芯片,可实现区域调光,比一般侧入式背光源芯片具备更好的透光均匀度以及更高的对比度和更多明暗细节;在使用Mini LED芯片的背光电视中,各Mini LED芯片之间的间距小,混光均匀,可以去除厚重的传统电视背光膜片,降低混光距离,实现超薄模组设计,其模组厚度可以媲美OLED模组的厚度。Mini-LED (Full English name: Mini-Light Emitting Diode) The size of a single side of the chip is between 100-200 μm. Mini-LED chips are used as direct-type backlight chips, which can achieve area dimming, which is more than ordinary side-type backlight sources. The chip has better uniformity of light transmission, higher contrast and more light and dark details; in the backlight TV using Mini LED chips, the distance between each Mini LED chip is small and the light is evenly mixed, which can remove the heavy traditional TV The backlight film reduces the mixing distance and realizes the ultra-thin module design. Its module thickness is comparable to that of OLED modules.
发明内容Summary of the invention
第一方面,本公开一些实施例提供了一种发光元件,包括:基板;多个光源芯片,所述多个光源芯片以阵列方式设置于基板上;保护层,所述保护层覆盖所述多个光源芯片;以及受激发光层,所述受激发光层设置于所述保护层的出光面上;其中,在所述保护层的出光面上设置有纵横交错的多个凹槽,所述纵横交错的多个凹槽限定出多个出光区域,每个所述出光区域对应所述多个光源芯片中的至少一个光源芯片;其中,每个所述凹槽的形状使得其槽壁能够将所述多个光源芯片发射至相应所述凹槽的槽壁上的光线折射至受激发光层。In a first aspect, some embodiments of the present disclosure provide a light emitting element including: a substrate; a plurality of light source chips, the plurality of light source chips being arranged on the substrate in an array manner; and a protective layer covering the multiple Light source chips; and an excited light layer, the excited light layer is disposed on the light emitting surface of the protective layer; wherein a plurality of grooves are arranged on the light emitting surface of the protective layer in a crisscross pattern, and A plurality of crisscrossed grooves define a plurality of light emitting regions, and each of the light emitting regions corresponds to at least one light source chip of the plurality of light source chips; wherein the shape of each of the grooves allows the wall of the groove to reflect The light emitted from the plurality of light source chips to the groove wall of the corresponding groove is refracted to the excited light layer.
第二方面,本公开一些实施例提供了一种背光模组,包括:背板;上述的第一方面的发光元件,所述发光元件设置在所述背板上。In a second aspect, some embodiments of the present disclosure provide a backlight module including: a back plate; the light-emitting element of the first aspect described above, the light-emitting element is disposed on the back plate.
第三方面,本公开一些实施例提供了一种显示装置,包括显示面 板以及上述第二方面的背光模组。In a third aspect, some embodiments of the present disclosure provide a display device including a display panel and the backlight module of the second aspect.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本公开实施例或相关技术中的技术方案,下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings in the following description are only Some of the disclosed embodiments can be obtained by those skilled in the art based on these drawings without paying any creative work.
图1为相关技术提供的一种发光元件的结构示意图;FIG. 1 is a schematic structural diagram of a light emitting element provided by the related art; FIG.
图2为根据本公开一些实施例的一种发光元件的结构示意图;2 is a schematic structural diagram of a light emitting element according to some embodiments of the present disclosure;
图3为根据本公开如图2所示的发光元件的俯视结构示意图;3 is a schematic plan view of the light-emitting element shown in FIG. 2 according to the present disclosure;
图4为根据本公开一些实施例的另一种发光元件的结构示意图;4 is a schematic structural diagram of another light emitting element according to some embodiments of the present disclosure;
图5为根据本公开一些实施例的又一种发光元件的结构示意图;5 is a schematic structural diagram of still another light emitting element according to some embodiments of the present disclosure;
图6为根据本公开一些实施例的一种背光模组的结构示意图;6 is a schematic structural diagram of a backlight module according to some embodiments of the present disclosure;
图7为根据本公开一些实施例的一种显示装置的结构示意图。FIG. 7 is a schematic structural diagram of a display device according to some embodiments of the present disclosure.
具体实施方式detailed description
下面将结合本公开实施例中的附图,对本公开实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本公开一部分实施例,而不是全部的实施例。基于本公开中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本公开保护的范围。The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, but not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by a person having ordinary skill in the art without making creative efforts fall within the protection scope of the present disclosure.
在本公开的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本公开和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本公开的限制。In the description of this disclosure, it needs to be understood that the terms "center", "up", "down", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inside", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing this disclosure and simplifying the description, and are not intended to indicate or imply The device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.
LED芯片一般需要一定的封装保护起来,避免脏污及损害等。相关技术中,直下式背光模组采用阵列式分布的Mini LED作为背光源芯片,该直下式背光模组可以去除厚重的传统电视背光膜片,降低混光距离,实现超薄模组设计,其模组厚度可以媲美OLED模组的厚度。 然而,LED芯片的封装方式可能会影响两颗LED芯片交界处对应位置的亮度以及出光效率。LED chips generally need a certain package to protect them to avoid dirt and damage. In the related technology, the direct type backlight module adopts an array-distributed Mini LED as a backlight chip. The direct type backlight module can remove the thick traditional TV backlight film, reduce the light mixing distance, and realize an ultra-thin module design. The module thickness is comparable to the thickness of an OLED module. However, the packaging method of the LED chip may affect the brightness and light output efficiency of the corresponding positions at the junction of the two LED chips.
如图1所示,相关技术中LED芯片的封装方式为:首先,将多个LED芯片11以阵列方式设置在基板12上,然后在基板12上涂覆覆盖多个LED芯片11的用于保护和支撑光学膜片的透明涂层13,并在透明涂层13上封装包含荧光粉(或者量子点材料)的光学膜片14,光学膜片14的出光侧设置有其他光学膜片15。所述透明涂层13一般为环氧树脂或者硅胶,折射率在1.4~1.5之间,该折射率大于光学膜片14的折射率。所述多个LED芯片发出的光线经透明涂层13出射至光学膜片14时,光线从光密介质进入光疏介质,满足全反射条件的大角度光线会发生全反射。As shown in FIG. 1, the packaging method of the LED chip in the related art is: first, a plurality of LED chips 11 are arranged in an array on the substrate 12, and then the substrate 12 is coated with a plurality of LED chips 11 for protection. And a transparent coating 13 supporting the optical film, and an optical film 14 containing a fluorescent powder (or a quantum dot material) is encapsulated on the transparent coating 13, and other optical films 15 are provided on the light-emitting side of the optical film 14. The transparent coating 13 is generally epoxy resin or silica gel, and the refractive index is between 1.4 and 1.5, and the refractive index is greater than the refractive index of the optical film 14. When the light emitted by the plurality of LED chips is emitted to the optical film 14 through the transparent coating layer 13, the light enters the optically sparse medium from the optically dense medium, and the large-angle light that satisfies the condition of total reflection will be totally reflected.
例如,光线从光密介质进入光疏介质发生全反射的临界角θ为:θ=arcsin(n’/n)。其中,n表示光密介质透明涂层13的折射率,n’表示光疏介质光学膜片14的折射率。在一般的情况下,根据透明图层13和光学膜片14使用的材料所具有的折射率,可计算得到θ=43.6°。针对一个LED芯片而言,以垂直于LED芯片所在平面并通过该LED芯片中心的中心线作为基准,该LED芯片的发光角度范围为中心线两侧的±90°,因此发光角度的绝对值大于43.6°的光线会发生全反射不能出射,或者多次反射后才能出射,并且发光角度的绝对值大于43.6°的大角度光线大部分照射在相邻的两个LED芯片之间的位置,使相邻的LED芯片之间的区域偏暗,影响相邻两个LED芯片之间位置的亮度以及出光效率。For example, the critical angle θ for total reflection of light from a dense medium into a sparse medium is: θ = arcsin (n '/ n). Here, n represents the refractive index of the optically dense medium transparent coating layer 13, and n 'represents the refractive index of the optically sparse medium optical film 14. In general, θ = 43.6 ° can be calculated based on the refractive indices of the materials used in the transparent layer 13 and the optical film 14. For an LED chip, the center line perpendicular to the plane of the LED chip and passing through the center of the LED chip is used as a reference. The light emitting angle range of the LED chip is ± 90 ° on both sides of the center line, so the absolute value of the light emitting angle is greater than 43.6 ° light will be totally reflected and cannot be emitted, or it can be emitted after multiple reflections, and large-angle light with an absolute value of the light emission angle greater than 43.6 ° mostly irradiates the position between two adjacent LED chips, making the phase The area between adjacent LED chips is dark, which affects the brightness of the position between adjacent two LED chips and the light output efficiency.
本公开的一些实施例提供了一种发光元件,如图2所示,所述发光元件包括:基板24、多个光源芯片21、保护层22以及受激发光层23;所述多个光源芯片21以阵列方式设置于基板24上;所述保护层22覆盖所述多个光源芯片21;所述受激发光层23设置于保护层22的出光面上,受激发光层23受所述多个光源芯片21发出的光线的激发而发光。Some embodiments of the present disclosure provide a light emitting element. As shown in FIG. 2, the light emitting element includes: a substrate 24, a plurality of light source chips 21, a protective layer 22, and an excited light layer 23; the plurality of light source chips. 21 is arranged on the substrate 24 in an array manner; the protective layer 22 covers the plurality of light source chips 21; the excited light layer 23 is disposed on the light-emitting surface of the protective layer 22, and the excited light layer 23 receives the multiple The light emitted from each light source chip 21 is excited to emit light.
结合图3所示,在所述保护层22的出光面上设有纵横交错的多个凹槽221,所述纵横交错的多个凹槽221限定出多个出光区域220, 每个所述出光区域220对应所述多个光源芯片21中的至少一个光源芯片21,其中,每个凹槽221的开口方向朝向保护层22的出光方向,每个凹槽221内部镂空,且每个凹槽221的形状使得其槽壁能够将对应的光源芯片21发射至相应凹槽221的槽壁2211、2212上的光线折射至受激发光层23。As shown in FIG. 3, a plurality of crisscross grooves 221 are provided on the light-emitting surface of the protective layer 22, and the crisscross grooves 221 define a plurality of light-exiting areas 220, each of which emits light. The region 220 corresponds to at least one light source chip 21 of the plurality of light source chips 21, wherein an opening direction of each groove 221 is directed toward a light emitting direction of the protective layer 22, each groove 221 is hollowed out inside, and each groove 221 The shape of the groove wall enables the light beams emitted by the corresponding light source chip 21 to the groove walls 2211 and 2212 of the corresponding groove 221 to be refracted to the excited light layer 23.
由于所述多个光源芯片发出的超出全反射临界角度的大角度光线可以照射至相应凹槽的槽壁上,并且由于各个所述凹槽能够将超出全反射临界角度的大角度光线从所述发光层折射至相应凹槽内的空气中,之后再由空气折射至所述受光激发层中,因此避免了超出全反射临界角度的大角度光线在所述保护层的出光面发生全反射,所以能够降低全发射造成的出射光线损失,提高发光元件的出光效率。Because the large-angle light rays exceeding the critical angle of total reflection emitted by the plurality of light source chips can be irradiated onto the groove wall of the corresponding groove, and because each of the grooves can remove the large-angle light rays exceeding the critical angle of total reflection from the The light-emitting layer is refracted into the air in the corresponding groove, and then refracted by the air into the light-excitation layer. Therefore, large-angle light that exceeds the critical angle of total reflection is prevented from being totally reflected on the light-emitting surface of the protective layer. It can reduce the loss of outgoing light caused by full emission and improve the light emitting efficiency of the light emitting element.
在一些实施例中,所述多个光源芯片21中的每个光源芯片21可以为LED芯片,例如Mini LED芯片,所述Mini LED芯片的尺寸一般控制在100~200μm,一个典型的Mini LED芯片的尺寸为长(200μm)×宽(100μm)×高(80μm),其额定电压为3V左右,工作电流为20-50mA。所述保护层22可以采用透明胶体,其作用为保护所述多个光源芯片21,所述保护层22一般采用透光性较好且可固化的材质,如环氧树脂等。所述受激发光层23包含量子点材料或荧光材料。所述基板24可以采用铝基板。In some embodiments, each of the plurality of light source chips 21 may be an LED chip, such as a Mini LED chip. The size of the Mini LED chip is generally controlled between 100 and 200 μm. A typical Mini LED chip Dimensions are length (200 μm) × width (100 μm) × height (80 μm), its rated voltage is about 3V, and the working current is 20-50mA. The protective layer 22 may be a transparent colloid, which protects the plurality of light source chips 21. The protective layer 22 is generally made of a material with good light transmission and curability, such as epoxy resin. The excited light layer 23 includes a quantum dot material or a fluorescent material. The substrate 24 may be an aluminum substrate.
在一些实施例中,所述多个光源芯片21中的每个光源芯片21采用蓝光或紫光LED芯片。例如,当所述多个光源芯片21产生蓝光时,对应的,受激发光层23包含的量子点材料为红绿量子点混合材料。示例性的,当当所述多个光源芯片21采用蓝光LED芯片以发出蓝光时,蓝光的峰值波长范围在440nm~470nm;蓝光激发红色量子点材料发出峰值波长范围在610nm~650nm的红色光线;蓝光激发绿色量子点材料发出峰值波长范围在520nm~550nm的绿色光线;这样红绿蓝三原色的光线混合形成混合光,例如:白光。再例如,当所述多个光源芯片21产生紫外光时,受激发光层23包含的量子点材料为红绿蓝量子点混合材料,其量子点材料混合在胶体(如环氧树脂)中,涂布在保护层22的出光侧。In some embodiments, each of the plurality of light source chips 21 is a blue light or purple light LED chip. For example, when the plurality of light source chips 21 generate blue light, correspondingly, the quantum dot material included in the excited light layer 23 is a red-green quantum dot mixed material. Exemplarily, when the plurality of light source chips 21 adopt blue light LED chips to emit blue light, the peak wavelength range of blue light is 440 nm to 470 nm; the blue light excites the red quantum dot material to emit red light with a peak wavelength range of 610 nm to 650 nm; blue light The green quantum dot material is excited to emit green light with a peak wavelength in the range of 520nm to 550nm; in this way, the three primary colors of red, green and blue are mixed to form a mixed light, such as white light. As another example, when the plurality of light source chips 21 generate ultraviolet light, the quantum dot material included in the excited light layer 23 is a red-green-blue quantum dot mixed material, and the quantum dot material is mixed in a colloid (such as epoxy resin). Coated on the light exit side of the protective layer 22.
此外,在受激发光层23的出光面还可以设置具有其他功能的光学膜片,例如保护受激发光层23的透明涂层、偏光片等等。In addition, an optical film having other functions may be provided on the light-exiting surface of the excited light layer 23, such as a transparent coating, a polarizer, and the like for protecting the excited light layer 23.
如图2和图3所示,在本公开一些实施例提供的发光元件中,相邻两个LED芯片21之间的距离为P,每个所述凹槽221的形状关于距离P的中线对称。所述多个光源芯片21按照行列方式分布,为提高所述发光元件的受激发光层23激发的光线的均匀性,相邻的两行光源芯片21关于相邻的两行光源芯片21之间横向延伸的凹槽221-a对称,相邻的两列光源芯片21关于相邻的两列光源芯片21之间竖向延伸的凹槽221-b对称。参照图3所示,凹槽221-a横向延伸的方向与所述多个光源芯片21行向排列的方向平行,凹槽221-b竖向延伸的方向与所述多个光源芯片21列向排列的方向平行。As shown in FIG. 2 and FIG. 3, in a light-emitting element provided by some embodiments of the present disclosure, a distance between two adjacent LED chips 21 is P, and a shape of each of the grooves 221 is symmetrical with respect to a center line of the distance P. . The plurality of light source chips 21 are distributed in a row and column manner. In order to improve the uniformity of the light excited by the excitation light layer 23 of the light emitting element, two adjacent rows of light source chips 21 are arranged between two adjacent rows of light source chips 21. The laterally extending grooves 221-a are symmetrical, and the two adjacent rows of light source chips 21 are symmetrical about the vertically extending grooves 221-b between the two adjacent rows of light source chips 21. Referring to FIG. 3, a direction in which the grooves 221-a extend laterally is parallel to a direction in which the plurality of light source chips 21 are aligned in a row, and a direction in which the grooves 221-2 b extend vertically is in a row direction with the plurality of light source chips 21. The alignments are parallel.
在图3显示的发光元件中,纵横交错的凹槽221-a和221-b将发光层22的出光面分割成4个出光区域220,且每个出光区域220内均设置一个光源芯片21。但并不限定于此,在本公开一些实施例中也可以在每个出光区域220内设置两个或更多个光源芯片21。In the light-emitting element shown in FIG. 3, the crisscross grooves 221-1a and 221-2b divide the light-emitting surface of the light-emitting layer 22 into four light-emitting regions 220, and a light source chip 21 is disposed in each light-emitting region 220. However, it is not limited to this. In some embodiments of the present disclosure, two or more light source chips 21 may be provided in each light emitting area 220.
如图2所示,在一些实施例中,所述凹槽221的截面呈倒锥形,所述凹槽221包括相对于竖直方向倾斜的两个槽壁2211、2212,所述两个槽壁2211、2212与所述受激发层23围成的图形的截面呈三角形。所述凹槽221的两个槽壁2211、2212中每个槽壁的倾斜角度α的取值范围为[41.8°,45.6°],即41.8°≤α≤45.6°。其中α为凹槽221的两个槽壁2211、2212中的每个槽壁与竖直方向的夹角。当然,凹槽221的两个槽壁2211、2212各自与竖直方向的夹角可以相等或不相等。当凹槽221的两个槽壁2211、2212各自与竖直方向的夹角相等时,凹槽221的两个槽壁2211、2212相对于通过凹槽221的最底部并与所述发光层22的出光面垂直的平面对称。As shown in FIG. 2, in some embodiments, the cross section of the groove 221 has an inverted cone shape, and the groove 221 includes two groove walls 2211 and 2212 inclined with respect to a vertical direction. The two grooves The cross-section of the pattern enclosed by the walls 2211 and 2212 and the excited layer 23 is triangular. The range of the inclination angle α of each of the two groove walls 2211 and 2212 of the groove 221 is [41.8 °, 45.6 °], that is, 41.8 ° ≦ α ≦ 45.6 °. Where α is the angle between each of the two groove walls 2211 and 2212 of the groove 221 and the vertical direction. Of course, the angle between the two groove walls 2211 and 2212 of the groove 221 and the vertical direction may be equal or different. When the angles between the two groove walls 2211 and 2212 of the groove 221 and the vertical direction are equal, the two groove walls 2211 and 2212 of the groove 221 are opposite to the bottom of the groove 221 and the light emitting layer 22 The light plane is symmetrical to the vertical plane.
基于此,参照图2所示,所述保护层22的出光面包括倒锥形的凹槽221的槽壁2211、2212和平面222,凹槽221设置在对应于一个LED芯片与另一个LED芯片之间间隔的位置处,平面222设置在各个LED芯片正上方的位置处。Based on this, referring to FIG. 2, the light-emitting surface of the protective layer 22 includes groove walls 2211, 2212, and a flat surface 222 of an inversely tapered groove 221. The groove 221 is provided corresponding to one LED chip and another LED chip. At the interval, the plane 222 is disposed at a position directly above each LED chip.
所述多个光源芯片21发出光线时,光线从保护层22入射至与各 个光源芯片21对应的凹槽221中。可以以θ作为光线从光密介质(保护层22)进入光疏介质(凹槽221内部的空气)发生全反射的临界角,θ=arcsin(1/n),此时n为保护层22的折射率。When the light source chips 21 emit light, the light is incident from the protective layer 22 into the grooves 221 corresponding to the light source chips 21. You can use θ as the critical angle for the total reflection of the light from the dense medium (the protective layer 22) into the phobic medium (the air inside the groove 221). Θ = arcsin (1 / n). At this time, n is the value of the protective layer 22. Refractive index.
在未设置凹槽221的情况下,参照图2中的虚线箭头所示,当某个光源芯片21发出的一条光线的出射角度θ1大于上述临界角θ时,那么该光线将会发生全反射,进而无法在保护层22的顶部平面222出射。本公开一些实施中设置倒锥形的凹槽221后,如图2所示,当某个光源芯片21发出一条出射角度为θ1的光线,且该出射角度θ1大于上述临界角θ时,该光线不会发生全反射,而是会照射在倒锥形的凹槽的槽壁2211上,并进一步从槽壁2211出射。也就是说,在该光线从保护层22出射到凹槽221内时会发生折射,在折射过程中光线的入射角度为Φ,其中,Φ=θ1-(90°-α),满足:Φ=θ1-(90°-α)=θ1+α-90°≤arcsin(1/n)=θ。In the case where the groove 221 is not provided, as shown by the dotted arrow in FIG. 2, when the exit angle θ1 of a ray emitted by a certain light source chip 21 is greater than the above-mentioned critical angle θ, the ray will be totally reflected, Furthermore, it cannot be emitted from the top plane 222 of the protective layer 22. After the inverted cone-shaped groove 221 is provided in some implementations of the present disclosure, as shown in FIG. 2, when a light source chip 21 emits a light having an exit angle θ1, and the exit angle θ1 is greater than the critical angle θ, the light Total reflection does not occur, but it will irradiate the groove wall 2211 of the inverted tapered groove and further exit from the groove wall 2211. In other words, the light is refracted when it exits the protective layer 22 into the groove 221, and the angle of incidence of the light during the refraction is Φ, where Φ = θ1- (90 ° -α), which satisfies: Φ = θ1- (90 ° -α) = θ1 + α-90 ° ≦ arcsin (1 / n) = θ.
如上所述,在折射面处(槽壁2211处)光线的入射角为Φ。保护层22一般为环氧树脂或者硅胶,其折射率在1.4~1.5之间,那么光线从保护层22出射至凹槽221中的空气中时发生全反射临界角的范围为:41.8°≤θ≤45.6。为了保证各个光源芯片21发出的所有的光线能够都从保护层22出射,需要使得出射角度θ1满足θ≤θ1≤90°这一关系的光线照射在倒锥形的凹槽221的槽壁2211上,并使得出射角度θ1满足θ1<θ这一关系的光线照射在保护层22的平面222上。并且为了避免光线从槽壁2211出射后,再照射在槽壁2212上,倒锥形的凹槽的槽壁与竖直方向的夹角越大越好。As described above, the incident angle of the light at the refracting surface (at the groove wall 2211) is Φ. The protective layer 22 is generally epoxy resin or silica gel, and its refractive index is between 1.4 and 1.5. The range of the critical angle for total reflection when light exits from the protective layer 22 into the air in the groove 221 is: 41.8 ° ≤θ ≤45.6. In order to ensure that all the light emitted by each light source chip 21 can be emitted from the protective layer 22, it is necessary to make the light having an exit angle θ1 satisfying the relationship of θ ≦ θ1 ≦ 90 ° to illuminate the groove wall 2211 of the inverted tapered groove 221 , And make the light having the angle θ1 satisfying the relationship θ1 <θ irradiate on the plane 222 of the protective layer 22. In addition, in order to prevent light from radiating from the groove wall 2211 and then shining on the groove wall 2212, the larger the angle between the groove wall of the inverted tapered groove and the vertical direction, the better.
在一些实施例中,考虑极限情况,当θ1=90°的时候,凹槽的槽壁与所述受激发层围成的截面为矩形。此时,凹槽的槽壁2211和槽壁2212均与竖直方向平行(即相对于竖直方向的倾斜角度为0),则满足Φ=θ1-(90°-α)=90°-(90°-α)≤arcsin(1/n)=θ,即α≤θ,由于41.8°<θ<45.6°;所以的取值范围为α≤45.6°。In some embodiments, considering a limit case, when θ1 = 90 °, a cross section enclosed by the groove wall of the groove and the excited layer is rectangular. At this time, the groove wall 2211 and the groove wall 2212 of the groove are both parallel to the vertical direction (that is, the inclination angle with respect to the vertical direction is 0), then Φ = θ1- (90 ° -α) = 90 °-( 90 ° -α) ≤arcsin (1 / n) = θ, that is, α≤θ, since 41.8 ° <θ <45.6 °; the value range is α≤45.6 °.
在一些实施例中,如图2所示,从LED芯片的发光面到保护层22最顶部出光面的距离为H,该LED芯片的高度为h2,所述凹槽的深度为h1,H、h1和h2满足:H≤h1<H+h2,则可以保证从LED芯 片发出的光线能够照射在所述凹槽221的槽壁上,并在所述槽壁上发生折射。In some embodiments, as shown in FIG. 2, the distance from the light emitting surface of the LED chip to the top light emitting surface of the protective layer 22 is H, the height of the LED chip is h2, and the depth of the groove is h1, H, h1 and h2 satisfy: H ≦ h1 <H + h2, then it can be ensured that the light emitted from the LED chip can be irradiated on the groove wall of the groove 221 and refracted on the groove wall.
在本公开一些实施例中,如图4所示,所述发光元件的凹槽221的两个槽壁2211、2212与受激发光层23围成的截面呈弓形。示例性的,所述凹槽221的两个槽壁2211、2212与受激发光层23围成的截面可以为半圆形。所述凹槽221的两个槽壁2211、2212中每个槽壁各处外切线的倾斜角度α的取值范围为[41.8°,45.6°],即41.8°≤α≤45.6°。其中α为凹槽221的两个槽壁2211、2212中的每个槽壁各处的外切线与竖直方向的夹角。凹槽221的两个槽壁2211、2212相对于通过凹槽221的最底部并与所述发光层22的出光面垂直的平面可以对称、也可以不对称。In some embodiments of the present disclosure, as shown in FIG. 4, a cross section surrounded by two groove walls 2211, 2212 of the groove 221 of the light-emitting element and the excited light layer 23 is arcuate. Exemplarily, a cross section surrounded by two groove walls 2211 and 2212 of the groove 221 and the excited light layer 23 may be semicircular. The range of the inclination angle α of the outer tangent to each of the two groove walls 2211 and 2212 of the groove 221 is [41.8 °, 45.6 °], that is, 41.8 ° ≦ α ≦ 45.6 °. Where α is the angle between the outer tangent of each of the two groove walls 2211 and 2212 of the groove 221 and the vertical direction. The two groove walls 2211 and 2212 of the groove 221 may be symmetrical or asymmetric with respect to a plane passing through the bottom of the groove 221 and perpendicular to the light emitting surface of the light emitting layer 22.
可以理解的是,如图4所示,光线照射至弓形的凹槽的槽壁时,光线的法线角度β是随LED芯片发出的光线的出射角度θ2不断变化的,随着LED芯片发出的光线的出射角度θ2不断增大,光线的法线角度β不断减小。并且随着LED芯片发出的光线的出射角度θ2变大,光线传递至弓形的凹槽221的槽壁2211处的入射角度Φ逐渐变大,因此只要保证在LED芯片发出的光线的出射角度最大(90°)时,光线传递至弓形的凹槽221的槽壁2211处的入射角度Φ小于临界角θ,则LED发出的光线均可以被凹槽221的槽壁折射,不会发生全反射。It can be understood that, as shown in FIG. 4, when the light is irradiated to the groove wall of the arcuate groove, the normal angle β of the light is constantly changing with the exit angle θ2 of the light emitted by the LED chip. The exit angle θ2 of the light keeps increasing, and the normal angle β of the light keeps decreasing. And as the exit angle θ2 of the light emitted by the LED chip becomes larger, the incident angle Φ of the light transmitted to the groove wall 2211 of the arcuate groove 221 gradually increases, so as long as the exit angle of the light emitted by the LED chip is maximized ( 90 °), when the incident angle Φ of the light transmitted to the groove wall 2211 of the arcuate groove 221 is smaller than the critical angle θ, the light emitted by the LED can be refracted by the groove wall of the groove 221 without total reflection.
如图4所示,当LED芯片21发出的出射角度为θ2=90°的光线照射在凹槽221的槽壁上发生折射时,光线的入射角度由原来的θ2变为Φ,且Φ=90°-β,其中β为光线的入射面法线与竖直方向的夹角,因此只要满足:h1≥(H+h2)/cosβ,即弓形弧线的半径足够大即可保证光线在所述凹槽221的槽壁发生折射。其中H为LED芯片的发光面到保护层22最顶部出光面的距离,h2为LED芯片的高度,h1为弓形凹槽的弦高(即凹槽的深度)。As shown in Figure 4, when the light emitted by the LED chip 21 with an angle of θ2 = 90 ° is irradiated on the groove wall of the groove 221 and refracted, the angle of incidence of the light changes from the original θ2 to Φ, and Φ = 90 ° -β, where β is the angle between the normal of the incident surface of the light and the vertical direction, so as long as: h1≥ (H + h2) / cosβ, that is, the radius of the arc of an arc is large enough to ensure that the light is in the The groove wall of the groove 221 is refracted. Among them, H is the distance from the light emitting surface of the LED chip to the top light emitting surface of the protective layer 22, h2 is the height of the LED chip, and h1 is the chord height of the bow-shaped groove (ie, the depth of the groove).
在本公开一些实施例中,如图5所示,所述发光元件的凹槽221的两个槽壁2211、2212与受激发光层23围成的截面呈梯形,且凹槽221还包括槽底2213。所述凹槽221的两个槽壁2211、2212中每个槽壁的倾斜角度α的取值范围为[41.8°,45.6°],即41.8°≤α≤45.6°。其中 α为凹槽221的两个槽壁2211、2212中的每个槽壁与竖直方向的夹角。当然,凹槽221的两个槽壁2211、2212各自与竖直方向的夹角可以相等或不相等。当凹槽221的两个槽壁2211、2212各自与竖直方向的夹角相等时,凹槽221的两个槽壁2211、2212相对于通过凹槽221的槽底2213的中心并与所述发光层22的出光面垂直的平面对称。In some embodiments of the present disclosure, as shown in FIG. 5, a cross section formed by two groove walls 2211, 2212 of the groove 221 of the light-emitting element and the excited light layer 23 is trapezoidal, and the groove 221 further includes a groove. Bottom 2213. The range of the inclination angle α of each of the two groove walls 2211 and 2212 of the groove 221 is [41.8 °, 45.6 °], that is, 41.8 ° ≦ α ≦ 45.6 °. Where α is the angle between each of the two groove walls 2211 and 2212 of the groove 221 and the vertical direction. Of course, the angle between the two groove walls 2211 and 2212 of the groove 221 and the vertical direction may be equal or different. When the angle between the two groove walls 2211 and 2212 of the groove 221 is equal to the vertical direction, the two groove walls 2211 and 2212 of the groove 221 are relative to the center of the groove bottom 2213 passing through the groove 221 and The light emitting surface of the light-emitting layer 22 is symmetrical in a vertical plane.
参照图6所示,本公开一些实施例还提供一种背光模组,包括:背板51;Referring to FIG. 6, some embodiments of the present disclosure further provide a backlight module, including: a back plate 51;
上述实施例提供的发光元件52,所述发光元件52设置在所述背板51上。The light-emitting element 52 provided in the foregoing embodiment is disposed on the back plate 51.
如图7所示,本公开一些实施例提供了一种显示装置6,包括上述的背光模组。As shown in FIG. 7, some embodiments of the present disclosure provide a display device 6 including the above-mentioned backlight module.
其中背光模组的出光侧设置有液晶显示面板。该显示装置6可以为电子纸、手机、电视、数码相框等等显示设备。A liquid crystal display panel is disposed on a light emitting side of the backlight module. The display device 6 may be a display device such as an electronic paper, a mobile phone, a television, a digital photo frame, or the like.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above is only a specific implementation of the present disclosure, but the scope of protection of the present disclosure is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in the present disclosure. It should be covered by the protection scope of this disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (12)

  1. 一种发光元件,包括:A light emitting element includes:
    基板;Substrate
    多个光源芯片,所述多个光源芯片以阵列方式设置于所述基板上;A plurality of light source chips arranged on the substrate in an array manner;
    保护层,所述保护层覆盖所述多个光源芯片;以及,A protective layer covering the plurality of light source chips; and
    受激发光层,所述受激发光层设置于所述保护层的出光面上;An excited light layer, the excited light layer is disposed on a light emitting surface of the protective layer;
    其中,在所述保护层的出光面上设有纵横交错的多个凹槽,所述纵横交错的多个凹槽限定出多个出光区域,每个所述出光区域对应所述多个光源芯片中的至少一个光源芯片;Wherein, the light emitting surface of the protective layer is provided with a plurality of crisscross grooves, the crisscrossed grooves define a plurality of light emitting areas, and each of the light emitting areas corresponds to the plurality of light source chips. At least one of the light source chips;
    其中,每个所述凹槽的形状使得其槽壁能够将所述多个光源芯片发射至相应所述凹槽的槽壁上的光线折射至受激发光层。The shape of each of the grooves enables the groove wall of the grooves to refract the light emitted from the plurality of light source chips onto the groove walls of the corresponding grooves to the excited light layer.
  2. 根据权利要求1所述的发光元件,其中,每个所述凹槽包括相对于与所述保护层的出光面垂直的方向倾斜的两个槽壁,每个所述凹槽的两个槽壁与所述受激发层围成的截面呈三角形、矩形、梯形或弓形。The light emitting element according to claim 1, wherein each of the grooves includes two groove walls inclined with respect to a direction perpendicular to a light emitting surface of the protective layer, and two groove walls of each groove The cross section enclosed with the excited layer is triangular, rectangular, trapezoidal, or arched.
  3. 根据权利要求2所述的发光元件,其中,The light-emitting element according to claim 2, wherein:
    在每个所述凹槽的槽壁与所述受激发层围成的截面呈三角形或梯形时,每个所述凹槽的两个槽壁相对于与所述保护层的出光面垂直的方向的倾斜角度的取值范围为[41.8°,45.6°];When the groove wall of each groove and the excited layer have a triangular or trapezoidal cross-section, the two groove walls of each groove are in a direction perpendicular to the light exit surface of the protective layer. The range of the tilt angle is [41.8 °, 45.6 °];
    在每个所述凹槽的槽壁与所述受激发层围成的截面呈矩形时,每个所述凹槽的槽壁相对于与所述保护层的出光面垂直的方向的倾斜角度为0;When the cross section enclosed by the groove wall of each groove and the excited layer is rectangular, the inclination angle of the groove wall of each groove with respect to the direction perpendicular to the light exit surface of the protective layer is 0;
    在每个所述凹槽的槽壁与所述受激发层围成的截面呈弓形时,每个所述凹槽槽壁各处的外切线相对于与所述保护层的出光面垂直的方向的倾斜角度的取值范围为[41.8°,45.6°]。When the cross section surrounded by the groove wall of the groove and the excited layer is arcuate, the outer tangent lines of the groove wall of each groove are relative to the direction perpendicular to the light exit surface of the protective layer. The range of the tilt angle of is [41.8 °, 45.6 °].
  4. 根据权利要求2所述的发光元件,其中,在每个所述凹槽的两个槽壁与所述受激发层围成的截面呈三角形或弓形时,每个所述凹槽的两个槽壁相对于通过相应凹槽的最底部并与所述发光层的出光面垂直的平面对称。The light-emitting element according to claim 2, wherein when the cross section enclosed by the two groove walls of each of the grooves and the excited layer is triangular or arcuate, the two grooves of each of the grooves The wall is symmetrical with respect to a plane passing through the bottom of the corresponding groove and perpendicular to the light emitting surface of the light emitting layer.
  5. 根据权利要求2所述的发光元件,其中,在每个所述凹槽的两个槽壁与所述受激发层围成的截面呈梯形或矩形时,每个所述凹槽还包括连接所述两个槽壁的槽底,并且每个所述凹槽的两个槽壁相对于通过所述槽底的中心并与所述保护层的出光面垂直的平面对称。The light emitting element according to claim 2, wherein, when a cross section surrounded by the two groove walls of each of the grooves and the excited layer is trapezoidal or rectangular, each of the grooves further includes a connecting The groove bottoms of the two groove walls, and the two groove walls of each groove are symmetrical with respect to a plane passing through the center of the groove bottom and perpendicular to the light exit surface of the protective layer.
  6. 根据权利要求2所述的发光元件,其中,所述多个光源芯片中一个光源芯片的发光面到所述保护层最顶部出光面的距离为H,所述一个光源芯片的高度为h2,所述凹槽的深度为h1,则H、h1以及h2满足:H≤h1<H+h2。The light emitting element according to claim 2, wherein a distance from a light emitting surface of one light source chip to a light emitting surface at the top of the protective layer is H, and a height of the one light source chip is h2. If the depth of the groove is h1, then H, h1, and h2 satisfy: H ≦ h1 <H + h2.
  7. 根据权利要求2所述的发光元件,其中,所述多个光源芯片中一个光源芯片的发光面到所述保护层最顶部出光面的距离为H,所述一个光源芯片的高度为h2,所述凹槽的深度为h1,光线入射的法线与垂直于所述保护层的出光面的方向之间的法线角度为β,则H、h2、β以及h1满足:h1≥(H+h2)/cosβ。The light emitting element according to claim 2, wherein a distance from a light emitting surface of one light source chip to a light emitting surface at the top of the protective layer is H, and a height of the one light source chip is h2. The depth of the groove is h1, and the normal angle between the normal of the light incident and the direction perpendicular to the light exit surface of the protective layer is β, then H, h2, β, and h1 satisfy: h1≥ (H + h2 ) / cosβ.
  8. 根据权利要求1所述的发光元件,其中,所述多个光源芯片按照行列方式设置在所述基板上,相邻的两行所述光源芯片关于所述相邻的两行光源芯片之间横向延伸的凹槽对称;相邻的两列所述光源芯片关于所述相邻的两列光源芯片之间竖向延伸的凹槽对称。The light-emitting element according to claim 1, wherein the plurality of light source chips are arranged on the substrate in a row and column manner, and two adjacent rows of the light source chips are transverse with respect to between the adjacent two rows of the light source chips. The extended grooves are symmetrical; the two adjacent rows of the light source chips are symmetrical about the vertically extending grooves between the two adjacent rows of the light source chips.
  9. 根据权利要求1所述的发光元件,其中,所述受激发光层包含量子点材料或荧光材料。The light emitting element according to claim 1, wherein the excited light layer includes a quantum dot material or a fluorescent material.
  10. 根据权利要求1-9任一项所述的发光元件,其中,每个所述光源芯片的单个边的尺寸为100-200μm。The light emitting element according to any one of claims 1-9, wherein a size of a single side of each of the light source chips is 100-200 μm.
  11. 一种背光模组,包括:A backlight module includes:
    背板;Backplane
    如权利要求1-10任一项所述的发光元件,所述发光元件设置在所述背板上。The light emitting element according to any one of claims 1 to 10, which is provided on the back plate.
  12. 一种显示装置,包括:A display device includes:
    显示面板;以及Display panel; and
    如权利要求11所述的背光模组。The backlight module according to claim 11.
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