CN110828645A - Light-emitting element, backlight module and display device - Google Patents

Light-emitting element, backlight module and display device Download PDF

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Publication number
CN110828645A
CN110828645A CN201810910740.7A CN201810910740A CN110828645A CN 110828645 A CN110828645 A CN 110828645A CN 201810910740 A CN201810910740 A CN 201810910740A CN 110828645 A CN110828645 A CN 110828645A
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light
groove
light source
emitting element
protective layer
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CN110828645B (en
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李富琳
李潇
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Hisense Electric Co Ltd
Qingdao Hisense Electronics Co Ltd
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Hisense Electric Co Ltd
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Priority to PCT/CN2019/087267 priority patent/WO2020029632A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Planar Illumination Modules (AREA)
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Abstract

The embodiment of the invention provides a light-emitting element, a backlight module and a display device, relates to the field of photoelectric devices, and can reduce emergent light loss caused by total emission and improve the light-emitting efficiency of the light-emitting element. The light emitting element includes: the optical chips are arranged on the substrate in an array mode; the protective layer covers the light source chip; grooves are formed between adjacent light source chips on the light-emitting surface of the protective layer; the opening direction of the groove faces to the light emergent direction of the protective layer; the groove is shaped so that the groove wall can refract the light emitted by the light source chip to the groove wall of the groove to the stimulated luminescent layer; the stimulated luminescent layer is arranged on the light-emitting surface of the protective layer and is excited by the light emitted by the light source chip to emit light.

Description

Light-emitting element, backlight module and display device
Technical Field
The invention relates to the field of photoelectric devices, in particular to a light-emitting element, a backlight module and a display device.
Background
The chip size of the Mini-LED (the full name of the Mini-Light Emitting Diode) is between 100 and 200 mu m, the Mini LED is used for direct type design and can be made into area dimming, and compared with the common side Light type backlight chip, the Mini-LED has better Light transmission uniformity, higher contrast and more Light and shade details; the distance between the LEDs of the Mini LED backlight television is small, light mixing is uniform, a thick traditional television backlight film can be removed, the light mixing distance is reduced, the design of an ultrathin module is realized, and the thickness of the thin film can be comparable to that of an OLED.
LED chips generally need to be protected by a certain package to prevent contamination and damage. As shown in fig. 1, a typical packaging method is: the LED chips 11 are distributed on the substrate 12 in an array manner, then the transparent coating 13 covering the LED chips 11 is coated on the substrate 12, the optical film 14 containing fluorescent powder (or quantum dot material) is packaged on the transparent coating 13, and the light-emitting side of the optical film 14 is provided with other optical films 15. A clear coat 13 for protecting and supporting optical diaphragm is epoxy or silica gel generally, the refracting index is between 1.4 ~ 1.5, when the light that the LED chip sent goes out to optical diaphragm through clear coat, get into the light from the optical dense medium and dredge the medium, the total reflection can take place for wide-angle light, and the large part of wide-angle light shines in the LED chip and the junction of LED chip, therefore can lead to the bright dark inequality of being shaded, LED chip and LED chip junction are dark partially, the luminance and the luminous efficiency of two LED chip junctions corresponding position have been influenced.
Disclosure of Invention
Embodiments of the present invention provide a light emitting device, a backlight module and a display device, which can reduce the loss of emergent light caused by total emission and improve the light emitting efficiency of the light emitting device.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in a first aspect, there is provided a light emitting element including: the light source chip, the protective layer and the stimulated luminescent layer;
the light source chips are arranged on the substrate in an array mode;
the protective layer covers the light source chip; grooves are formed between adjacent light source chips on the light-emitting surface of the protective layer; the groove is in a shape that the groove wall can refract the light emitted by the light source chip to the groove wall of the groove to the stimulated luminescent layer;
the stimulated luminescent layer is arranged on the light-emitting surface of the protective layer and is excited by the light emitted by the light source chip to emit light.
In a second aspect, a backlight module is provided, which comprises
A back plate;
the backlight source is arranged on the back plate and comprises the light-emitting element.
In a third aspect, a display device is provided, which includes the backlight module.
The light-emitting element provided in the above aspect includes: the light source chips are arranged on the substrate in an array mode; the protective layer covers the light source chip; wherein, on the light-emitting surface of the protective layer, a groove is arranged between adjacent light source chips; the groove is shaped so that the groove wall can refract the light emitted by the light source chip to the groove wall of the groove to the stimulated luminescent layer; the stimulated luminescent layer is arranged on the light-emitting surface of the protective layer and is excited by the light emitted by the light source chip to emit light. Because the large-angle light emitted by the light source chip can irradiate the groove wall of the groove, and the groove can refract the large-angle light to the light-emitting layer, the total reflection of the large-angle light on the emergent surface of the protective layer is avoided, the emergent light loss caused by total emission can be reduced, and the light-emitting efficiency of the light-emitting element is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a light emitting device provided in the prior art;
fig. 2 is a schematic structural diagram of a light emitting device according to an embodiment of the present invention;
FIG. 3 is a schematic top view of the light emitting device shown in FIG. 2 according to the present invention;
fig. 4 is a schematic structural diagram of a light emitting device according to another embodiment of the present invention;
fig. 5 is a schematic structural diagram of a backlight module according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the backlight module of straight following formula design, adopt array distribution's Mini LED as the light source chip, can get rid of thick heavy traditional TV backlight diaphragm, reduce mixed light distance, realize ultra-thin module design, can compare favourably OLED's thickness. However, the packaging manner of the LED chips may affect the brightness and the light extraction efficiency of the corresponding position at the boundary of the two LED chips. As shown in fig. 1, the LED chips 11 are distributed on the substrate 12 in an array, then the substrate 12 is coated with a transparent coating 13 covering the LED chips 11, an optical film 14 containing phosphor (or quantum dot material) is encapsulated on the transparent coating 13, and another optical film 15 is disposed on the light-emitting surface of the optical film 14. The transparent coating 13 for protecting and supporting the optical film is generally made of epoxy resin or silica gel, the refractive index is 1.4-1.5, when light emitted by the LED chip is emitted to the optical film through the transparent coating, the light enters the optically thinner medium from the optically denser medium, and the light with a large angle is totally reflected, for example, the critical angle θ at which the light enters the optically thinner medium from the optically denser medium and is totally reflected is as follows: θ is arcsin (1/n). Illustratively, the refractive index of the transparent coating layer is 1.45, and θ is 43.6 °. The light emitting angle range of the LED chip is +/-90 degrees, light with the absolute value larger than 43.6 degrees can be totally reflected and can not be emitted, or emitted after being reflected for multiple times, most of light with the large angle with the absolute value larger than 43.6 degrees irradiates the junction of the LED chip and the LED chip, so that the backlight brightness is uneven, the junction of the LED chip and the LED chip is dark, and the brightness and the light emitting efficiency of the corresponding position of the junction of the two LED chips are influenced.
In view of the above technical problems, an embodiment of the present invention provides a light emitting device, as shown in fig. 2 and 3, including:
a light source chip 21, a protective layer 22, and an excited light emitting layer 23;
the light source chips 21 are arranged on the substrate 24 in an array manner;
the protective layer 22 covers the light source chip 21; wherein, on the light-emitting surface of the protective layer, a groove 221 is arranged between adjacent light source chips 21; wherein, the opening direction of the groove 221 faces the light-emitting direction of the protection layer 22; the groove 221 is hollowed out, and the shape of the groove 221 enables the groove wall to refract the light emitted by the light source chip 21 to the groove wall 2211 of the groove 221 to the stimulated light-emitting layer 23;
the stimulated light-emitting layer 23 is disposed on the light-emitting surface of the protection layer 22, and the stimulated light-emitting layer 23 is excited by the light emitted from the light source chip 21 to emit light.
It should be noted that the light source chip 21 may be an LED chip, such as a mini LED chip, and its rated voltage is about 3V and working current is 20-50 mA; the size of the mini LED chip is generally controlled to be 100-200 μm, and the size of a typical mini LED chip is 200 μm long by 100 μm wide by 80 μm high; the substrate 24 may be an aluminum substrate, and the excited light emitting layer 23 includes a quantum dot material or a fluorescent material. Blue light or purple light LED chips are adopted, for example, a light source chip generates blue light, the quantum dot material contained in the stimulated luminescent layer 23 is a red-green quantum dot mixed material, and the peak wavelength of the blue light is in the range of 440nm to 470nm when the LED chips emit the blue light; the blue light excites the red quantum dot material to emit red light with the peak wavelength ranging from 610nm to 650 nm; the blue light excites the green quantum dot material to emit green light with the peak wavelength within the range of 520nm to 550 nm; thus, mixed light is formed by mixing the primary colors of red, green and blue, for example: white light; alternatively, the light source generates ultraviolet light, and the quantum dot material included in the excited light emitting layer 23 is a red-green-blue quantum dot mixed material, and the quantum dot material is mixed in a colloid (such as epoxy resin) and coated on the light emitting side of the protective layer 22. The protective layer 22 may be made of transparent colloid, which is used to protect the light source chip 21 and is generally made of curable material with better light transmittance, such as epoxy resin; in addition, an optical film with other functions, such as a transparent coating layer for protecting the stimulated luminescent layer 23, a polarizer, etc., may be disposed on the light-emitting surface of the stimulated luminescent layer 23.
The light-emitting element provided in the above aspect includes: the light source chips are arranged on the substrate in an array mode and used for emitting light rays with wavelengths in a preset range; the protective layer covers the light source chip; grooves are formed between adjacent light source chips on the light-emitting surface of the protective layer; the groove is in a shape that the groove wall can refract the light emitted by the light source chip to the groove wall of the groove to the stimulated luminescent layer; the stimulated luminescent layer is arranged on the light-emitting surface of the protective layer and is excited by the light emitted by the light source chip to emit light. Because the large-angle light emitted by the light source chip can irradiate the groove wall of the groove, and the groove can refract the large-angle light to the light-emitting layer, the total reflection of the large-angle light on the emergent surface of the protective layer is avoided, the emergent light loss caused by total emission can be reduced, and the light-emitting efficiency of the light-emitting element is improved.
As shown in fig. 3, the light source chips are distributed in rows and columns, and in order to improve the uniformity of the light emitted from the excited light emitting layer of the light emitting element, two adjacent rows of light source chips 21 are symmetrical with respect to the groove 221-a extending transversely between the two adjacent rows of light source chips 21. The two adjacent columns of light source chips 21 are symmetrical with respect to the groove 221-b extending vertically between the two adjacent columns of light source chips 21. Referring to fig. 3, the cross section of the two groove walls of the groove 221-a is perpendicular to the direction in which the groove 221-a extends horizontally, the cross section of the two groove walls of the groove 221-b is perpendicular to the direction in which the groove 221-b extends vertically, the direction in which the groove extends horizontally is perpendicular to the direction in which the groove 221-b extends vertically, and the direction in which the groove extends horizontally is parallel to the direction in which the light source chips are arranged in a row direction; the vertical extending direction is parallel to the direction of the light source chip array.
As shown in fig. 2, P denotes a distance between the LED chips, and the groove 221 is symmetrical about a center line of P.
Referring to fig. 2, a schematic cross-sectional view of a light emitting device is provided, in which a cross section of a groove 221 is an inverted cone, an inclination angle α of two groove walls (2211, 2212) of the groove 221 is [41.8 °, 45.6 ° ], wherein α is an included angle between the two groove walls (2211, 2212) of the groove 221 and a vertical direction, and of course, the included angles between the two groove walls (2211, 2212) of the groove 221 and the vertical direction may be equal or unequal.
Referring to fig. 2, the light-emitting surface of the protective layer 22 includes an inverted-cone-shaped groove 221 and a plane 222, the groove 221 is disposed at a boundary position between the LED chip and the LED chip, and the plane 222 is disposed at a position right above the LED chip.
As shown in fig. 2, however, after the inverted-cone-shaped groove is formed in the implementation of the present invention, the light with the exit angle θ 1 is irradiated on the groove wall of the inverted-cone-shaped groove, and when refraction occurs, the incident angle of the light changes from the original θ 1 to Φ, and θ 1- (90 ° - α), which satisfies the following requirements:
Φ＝θ1+α-90°≤arcsin(1/n)＝θ。
as shown in fig. 2, the incident angle at the refracting surface (the groove wall 2211) is Φ. The protective layer 22 is generally made of epoxy resin or silica gel, the refractive index is 1.4-1.5, and the critical angle of total reflection is: theta is more than 41.8 degrees and less than 45.6 degrees. In order to ensure that all the light rays can be emitted, the light rays with the angle theta less than or equal to theta 1 less than or equal to 90 degrees are required to be irradiated on the groove wall 2211 of the inverted cone-shaped groove, and the light rays with the angle theta 1 less than or equal to theta are required to be irradiated on the plane 222 of the protective layer 22. And in order to avoid the light from being emitted from the groove wall 2211 and then irradiated on the groove wall 2212, the larger the included angle between the groove wall of the inverted cone-shaped groove and the vertical direction is, the better, exemplarily:
considering the limit, when θ 1 is 90 °, the groove is a rectangular groove, and both the groove wall 2211 and the groove wall 2212 are parallel to the vertical direction, then 90 ° - (90 ° - α) ═ θ, that is, α ═ θ, since θ is greater than 41.8 ° < θ < 45.6 °, α has a value range of 41.8 ° ≦ θ ≦ 45.6 °.
The depth H-H2 is not less than H1 and less than H, wherein H is the distance from the light emitting surface of the LED chip to the top of the protective layer 22, H2 is the height of the LED chip, and H1 is the depth of the inverted cone-shaped groove.
Referring to fig. 4, a schematic cross-sectional view of a light emitting device is provided, where the cross-section of the groove 221 is a circular arc, and it can be understood that, when light is irradiated to the groove wall of the circular arc-shaped groove, the normal angle (β) of light incidence varies with the angle of light emitted from the LED chip, and as the angle of light emitted from the LED chip increases, the incident angle Φ of light transmitted to the groove wall of the circular arc-shaped groove gradually increases, so that as long as the angle of light emitted from the LED is maximized (90 °), and the incident angle Φ of light transmitted to the groove wall of the circular arc-shaped groove is smaller than the critical angle θ, it can be ensured that the light emitted from the LED can be refracted by the groove wall of the groove, as shown in fig. 4, the light with the angle θ 2 being 90 ° is irradiated to the groove wall of the groove, and when refraction occurs, the incident angle of light changes from θ 2 to Φ being 90 ° - β, where β is the angle between the normal line and the vertical direction, so that:
h1 is not less than (H-H2)/cos β, that is, the radius of the arc is large enough to ensure the light to be refracted on the groove wall, wherein H is the distance from the luminous surface of the LED chip to the top of the protective layer 22, H2 is the height of the LED chip, and H1 is the radius of the semi-arc groove.
Referring to fig. 5, an embodiment of the present invention provides a backlight module, including: a back plate 51;
and a backlight 52, wherein the backlight 52 is disposed on the back plate 51, and the backlight 52 includes the above light emitting element.
The embodiment of the invention provides a display device, which comprises the backlight module. Wherein, the light-emitting side of the backlight module is provided with a liquid crystal display panel. The display device can be electronic paper, a mobile phone, a television, a digital photo frame and other display equipment.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (9)

1. A light-emitting element characterized by comprising: the light source chip, the protective layer and the stimulated luminescent layer;
the light source chips are arranged on the substrate in an array mode;
the protective layer covers the light source chip; grooves are formed between adjacent light source chips on the light-emitting surface of the protective layer; the groove is in a shape that the groove wall can refract the light emitted by the light source chip to the groove wall of the groove to the stimulated luminescent layer;
the stimulated luminescent layer is arranged on the light-emitting surface of the protective layer and is excited by the light emitted by the light source chip to emit light.
2. The light-emitting element according to claim 1, wherein a cross section of the groove is in an inverted cone shape.
3. The light-emitting element according to claim 2, wherein the inclination angle of the two groove walls of the groove has a value in a range of [41.8 °, 45.6 ° ].
4. The light-emitting element according to claim 1, wherein the groove has a circular arc-shaped cross section.
5. The light-emitting element according to claim 1, wherein the light source chips are distributed in rows and columns, and two adjacent rows of the light source chips are symmetrical with respect to a groove extending laterally between the two adjacent rows of the light source chips; the two adjacent columns of the light source chips are symmetrical about the groove which vertically extends between the two adjacent columns of the light source chips.
6. The light-emitting element according to claim 1, wherein the excited light-emitting layer contains a quantum dot material or a fluorescent material.
7. The light-emitting element according to any one of claims 1 to 6, wherein the size of the light source chip is 100-200 μm.
8. A backlight module, comprising:
a back plate;
a backlight disposed on the back sheet, the backlight comprising the light emitting element of any one of claims 1-7.
9. A display device comprising the backlight module of claim 8.
CN201810910740.7A 2018-08-10 2018-08-10 Light-emitting element, backlight module and display device Active CN110828645B (en)

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CN114253029B (en) * 2021-12-21 2023-12-12 天马微电子股份有限公司 Backlight module and display device
CN114967238B (en) 2022-07-26 2023-01-03 惠科股份有限公司 Display device, backlight module and control method thereof
CN115083302B (en) * 2022-07-27 2023-12-05 Tcl华星光电技术有限公司 LED display panel and display device

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