CN109586797B - Laser emitting assembly and corresponding optical module - Google Patents
Laser emitting assembly and corresponding optical module Download PDFInfo
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- CN109586797B CN109586797B CN201811366990.5A CN201811366990A CN109586797B CN 109586797 B CN109586797 B CN 109586797B CN 201811366990 A CN201811366990 A CN 201811366990A CN 109586797 B CN109586797 B CN 109586797B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
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Abstract
The invention discloses a laser emission assembly and a corresponding optical module, wherein the laser emission assembly comprises a ceramic tube shell, the bottom of the ceramic tube shell is provided with a pin, the ceramic tube shell is also provided with a metallization structure, and the pin is electrically connected with the metallization structure; the laser emission assembly also comprises a transition block, the transition block is arranged in the ceramic tube shell, and one or more laser chips are arranged on the transition block; the laser chip is electrically connected with the pins through the metallization structure to receive the control signal, wherein the distance difference exists between the height of the upper surface of the metallization structure and the height of the upper surface of the transition block, and the distance difference is within a preset range. The invention adopts a metallization structure to establish connection between the laser chip and the base pin of the ceramic tube shell, ensures the performance of the laser emission component in a wider temperature range, improves the high-frequency characteristic of the laser emission component and improves the reliability of the laser emission component.
Description
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to a laser emission assembly and a corresponding optical module.
Background
In recent years, with the development of the internet, the density of the light emitting unit is higher and higher, the requirement for the speed is higher and higher, and a product with better performance is expected to be manufactured at lower cost. Especially, the application of 5G technology has higher requirements on the wide temperature characteristic and the reliability of the laser emitting assembly.
At present, a laser emitting assembly can be manufactured based On a Chip On Board (COB) technology, but the laser emitting assembly manufactured by the method is sensitive to temperature change, poor in wide temperature characteristic and poor in high frequency characteristic. Moreover, the reliability is low, and the service life is limited. The products of the structure can only be applied to short-distance transmission and areas with insignificant environmental changes at present.
In order to overcome the influence of the environment, the laser emitting component can also be manufactured by adopting an airtight packaging technology with a soft tape (FPC). When the laser emitting assembly manufactured by adopting the soft belt technology is adopted, the manufacturing process is complex, the cost is higher and the yield is lower due to the high process requirement of the procedures such as soft belt welding and the like. In addition, in subsequent use, the FPC circuit board is easily broken by external force, and the reliability is low.
In view of this, overcoming the deficiencies of the prior art products is an urgent problem to be solved in the art.
Disclosure of Invention
Aiming at the defects or the improvement requirements of the prior art, the invention provides a laser emitting component and a corresponding optical module, and aims to establish connection between a laser chip and a pin of a ceramic tube shell by adopting a metallization structure, ensure the performance of the laser emitting component in the working process within a wider temperature range, improve the high-frequency characteristic of the laser emitting component and improve the reliability of the laser emitting component, thereby solving the technical problems of poor wide temperature characteristic, poor high-frequency characteristic and poor reliability of the conventional laser emitting component.
In order to achieve the above object, according to one aspect of the present invention, a laser emitting assembly is provided, the laser emitting assembly includes a ceramic package 1, a pin 11 is disposed at a bottom of the ceramic package 1, a metallization structure 12 is further disposed on the ceramic package 1, and the pin 11 is electrically connected to the metallization structure 12;
the laser emission component also comprises a transition block 2, wherein the transition block 2 is arranged in the ceramic tube shell 1, and one or more laser chips 3 are arranged on the transition block 2;
the laser chip 3 is electrically connected with the pins 11 through the transition block 2 to receive a control signal, wherein a distance difference exists between the height of the upper surface of the metallization structure 12 and the height of the upper surface of the transition block 2, and the distance difference is within a preset range.
Preferably, the metallization structure 12 comprises at least one ceramic layer 120;
the ceramic layer 120 includes a first metallization transmission portion 121, a dielectric portion 122, and a second metallization transmission portion 123, the dielectric portion 122 being disposed between the first metallization transmission portion 121 and the second metallization transmission portion 123;
wherein the impedance of the first metallization transmission section 121, the impedance of the dielectric section 122 and the impedance of the second metallization transmission section 123 are matched to each other.
Preferably, the first metalized transmission part 121 is used for signal coupling with a system ground, and the second metalized transmission part 123 is used for transmitting a modulation signal;
each of the ceramic layers 120 includes two of the first metallization transmission portions 121, and the second metallization transmission portions 123 are disposed between the first metallization transmission portions 121.
Preferably, each of said ceramic layers 120 comprises one of said second metallized through portions 123; or
Each of the ceramic layers 120 includes two of the second metallization transmitting portions 123, and the dielectric portion 122 is disposed adjacent to the second metallization transmitting portions 123.
Preferably, the metallization structure 12 comprises N ceramic layers 120;
the second metallization transmission portions 123 in adjacent ceramic layers 120 are offset from each other, and the distance between the second metallization transmission portions 123 in the ceramic layers 120 and the pins 11 of the ceramic package 1 gradually decreases in the direction away from the laser chip 3.
Preferably, the transition block 2 is a high-frequency thin film circuit, and the transition block 2 and the metallization structure 12 are connected by a gold wire or a gold layer.
Preferably, the laser emission assembly further comprises an optical window 4, the optical window 4 is disposed on a side wall of the ceramic package 1, and the optical window 4 is disposed on the light emitting side of the laser chip 3, wherein the optical window (4) allows laser light emitted by at least one or more laser chips (3) to pass through.
Preferably, the laser emitting assembly further comprises a semiconductor cooler 5 and a heat sink 6;
the semiconductor refrigerator 5 is arranged at the bottom of the ceramic tube shell 1, the heat sink 6 is arranged on the semiconductor refrigerator 5, and the transition block 2 is arranged on the heat sink 6.
Preferably, the laser emitting assembly further comprises a plurality of lenses 7, the number of the lenses 7 matching the number of the laser chips 3;
the lens 7 is arranged on the heat sink 6, and the central optical axis of the lens 7 penetrates through the center of the light emitting surface of the corresponding laser chip 3;
the lens 7 is used for shaping the laser light emitted by the laser chip 3.
According to another aspect of the present invention, an optical module is provided, which is characterized in that the optical module includes the laser emission assembly of the present invention, a control module and a circuit board, the control module is disposed on the circuit board, the laser emission assembly is welded on the circuit board through a pin 11 of a ceramic package 1, and the control module is connected with the laser emission assembly;
the control module is used for generating a control signal so as to control the laser emitting assembly to emit corresponding laser.
Generally, compared with the prior art, the technical scheme of the invention has the following beneficial effects: the invention provides a laser emission assembly which comprises a ceramic tube shell, wherein a pin is arranged at the bottom of the ceramic tube shell, a metallization structure is further arranged on the ceramic tube shell, and the pin is electrically connected with the metallization structure. The ceramic tube shell has better heat conductivity, can ensure the performance of the laser emission component in the working process within a wide temperature range, and improves the wide temperature characteristic.
On the other hand, the laser chip is electrically connected with the pin of the ceramic tube shell through the metallization structure to receive the control signal, and the metallization structure has the characteristic of high frequency and low loss and can effectively improve the high-frequency characteristic of the laser emission assembly.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a schematic top view of a laser emitting assembly according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a laser transmitter assembly according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a metallization structure provided by an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another metallization structure provided by an embodiment of the present invention;
FIG. 5 is a schematic top view of another laser emitter assembly provided in accordance with an embodiment of the present invention;
fig. 6 is a schematic top view of another laser emitting assembly according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1:
at present, a laser emitting assembly can be manufactured based On a Chip On Board (COB) technology, but the laser emitting assembly manufactured by the method is sensitive to temperature change, poor in wide temperature characteristic and poor in high frequency characteristic. Moreover, the reliability is low, and the service life is limited. The products of the structure can only be applied to short-distance transmission and areas with insignificant environmental changes at present. In order to overcome the influence of the environment, the laser emitting component can also be manufactured by adopting the packaging technology (FPC) of a soft belt. When the laser emitting assembly manufactured by adopting the soft belt technology is adopted, the manufacturing process is complex, the cost is higher and the yield is lower due to the high process requirement of the procedures such as soft belt welding and the like. In addition, in subsequent use, the FPC circuit board is easily broken by external force, and the reliability is low.
In order to solve the above problem, the present embodiment provides a laser emitting assembly, and one implementation of the laser emitting assembly is specifically described below with reference to fig. 1 to 6.
As shown in fig. 1 and fig. 2, in the present embodiment, the laser emitting assembly includes a ceramic package 1, a pin 11 is disposed at a bottom of the ceramic package 1, a metallization structure 12 is further disposed on the ceramic package 1, and the pin 11 is electrically connected to the metallization structure 12. Wherein the pin 11 is used for connecting with an external circuit.
The laser emission assembly further comprises a transition block 2, the transition block 2 is arranged in the ceramic tube shell 1, and a plurality of laser chips 3 are arranged on the transition block 2. Wherein the transition block 2 is a high-frequency thin-film circuit, for example, a high-frequency thin-film circuit made of an aluminum nitride material, and a plurality of laser chips 3 are disposed on the transition block 2.
In the present embodiment, the laser chip 3 is connected to the pin 11 of the ceramic package 1 through the metallization structure 12 to receive a control signal. In an alternative embodiment, the transition block 2 is electrically connected to the metallization structure 12, and the laser chip 3 is connected to the pin 11 of the ceramic package 1 through the transition block 2 and the metallization structure 12 to receive a control signal, wherein the control signal includes a modulation signal. That is, the laser chip 3 can directly establish a connection with the pins 11 through the metallization structure 12; the laser chip 3 may also be connected to the pins 11 through the transition block 2 and the metallization structure 12, depending on the specific structure of the laser chip 3.
In a specific application scenario, a distance difference exists between a height of an upper surface of the metallization structure 12 and a height of an upper surface of the transition block 2, where the distance difference is within a preset range, where the preset range is determined according to an actual situation, the upper surface of the metallization structure 12 may be flush with the upper surface of the transition block 2, the upper surface of the metallization structure 12 may also be lower than the upper surface of the transition block 2, or the upper surface of the metallization structure 12 may also be higher than the upper surface of the transition block 2, and the distance difference between the height of the upper surface of the metallization structure 12 and the height of the upper surface of the transition block 2 is controlled within the preset range, for example, the preset range is 5mm to 10mm, or other ranges, which are not specifically limited herein. The metallization structure 12 transmits the control signal in a layer-by-layer progressive manner, and for the specific structure of the metallization structure 12, please refer to the following description.
In an alternative embodiment, the transition block 2 is connected to the metallization structure 12 by a gold or gold layer. Because the metallization structure 12 has the characteristics of low loss and high speed vertical radio frequency, the bandwidth of signal transmission can be increased, the bandwidth can reach more than 30G, and the high-frequency characteristic of the laser emitting component can be effectively improved.
As shown in fig. 3 and 4, the metallization structure 12 comprises at least one ceramic layer 120, the ceramic layer 120 comprising a first metallization transmission portion 121, a dielectric portion 122 and a second metallization transmission portion 123, the dielectric portion 122 being disposed between the first metallization transmission portion 121 and the second metallization transmission portion 123; wherein the impedance of the first metallization transmission section 121, the impedance of the dielectric section 122 and the impedance of the second metallization transmission section 123 are matched to each other. Here, it should be noted that the first metallization transfer portion 121 and the first metallization transfer portion 123 are not pure metals, but are formed by plating a metal on a ceramic.
In the present embodiment, the dielectric portion 122 is used to isolate the first metallization transmission portion 121 from the second metallization transmission portion 123; on the other hand, the dielectric portion 122 also functions as an impedance matching, improving the high frequency characteristics of the metallization structure 12. In practical applications, the dielectric portion 122 may be made of a material having a dielectric constant close to that of air, and the first metallization transmission portion 121 and the second metallization transmission portion 123 may be made of a conductive material such as aluminum oxide.
Further, the first metalized transmission part 121 is used for coupling with a system ground signal, and the second metalized transmission part 123 is used for transmitting a modulation signal. Each of the ceramic layers 120 includes two first metallization transmission portions 121, and the second metallization transmission portion 123 is disposed between the first metallization transmission portions 121 to reduce signal interference experienced by the second metallization transmission portion 123.
In a specific application scenario, the metallization structure 12 is generally used for transmitting a modulation signal, and may be modulated in a single-ended manner or in a differential and double-ended manner. When the single-ended modulation is adopted, the ceramic layer 120 is in a GSG transmission mode, and the specific structure of the ceramic layer 120 is shown in fig. 3, where g (ground) represents a ground signal, s (signal) represents a modulation signal, and the GSG transmission mode refers to: in the ceramic layer 120, a second metallization transmission portion 123 is disposed between two first metallization transmission portions 121, wherein the first metallization transmission portions 121 are used for transmitting ground signals, and the second metallization transmission portions 123 are used for transmitting modulation signals, so as to form a GSG transmission mode.
Specifically, each of the ceramic layers 120 includes two first metallization transmission portions 121, one second metallization transmission portion 123, and a dielectric portion 122 disposed between the first metallization transmission portions 121 and the second metallization transmission portion 123, wherein the second metallization transmission portion 123 is disposed between the two first metallization transmission portions 121 to form a GSG transmission mode. In actual operation, the first metalized transmission part 121 is used for transmitting a Ground signal (Ground signal), and the second metalized transmission part 123 is used for modulating a signal.
When the differential double-ended modulation is adopted, the ceramic layer 120 is in the GSSG transmission mode, as shown in fig. 4, where g (ground) represents a ground signal, s (signal) represents a modulation signal, and the GSSG transmission mode refers to: in the ceramic layer 120, two second metallization transmission portions 123 are disposed between the two first metallization transmission portions 121, wherein the first metallization transmission portions 121 are used for transmitting ground signals, and the second metallization transmission portions 123 are used for transmitting modulation signals, so that a GSSG transmission mode is formed.
Specifically, each of the ceramic layers 120 includes two first metallization transmission portions 121, two second metallization transmission portions 123, a dielectric portion 122 disposed between the adjacent second metallization transmission portions 123, and a dielectric portion 122 disposed between the first metallization transmission portions 121 and the second metallization transmission portions 123, wherein the two second metallization transmission portions 123 are disposed between the two first metallization transmission portions 121, forming a GSSG transmission mode. In actual operation, the first metalized transmission part 121 is used for transmitting a Ground signal (Ground signal), and the second metalized transmission part 123 is used for differentially modulating a signal.
In this embodiment, N layers of vertically distributed ceramic layers 120 may be disposed according to the distance from the transition block 2 to the bottom of the ceramic package 1 (the side of the ceramic package 1 on which the pins 11 are disposed), where N is a positive integer. In the actual manufacturing process, the structure corresponding to the ceramic layer 120 is transmitted layer by using the via hole or the medium, and the modulation signal received by the pin 11 can sequentially pass through the multiple ceramic layers 120 and be transmitted to the transition block 2 to modulate the laser chip 3, so that the loss can be effectively reduced, and the high-frequency characteristic is improved.
In order to reduce the transmission loss, in the actual manufacturing process, the metallization structures 12 may be manufactured in a layer-by-layer staggered manner. The second metalized transmission portions 123 in the adjacent ceramic layers 120 are staggered with each other, and at least part of the second metalized transmission portions 123 in the adjacent ceramic layers 120 are overlapped to ensure that signals can be transmitted layer by layer, and the distance between the second metalized transmission portions 123 in the ceramic layers 120 and the pins 11 of the ceramic package 1 is gradually reduced along the direction far away from the laser chip 3, so that the routing between the metalized structure 12 and the laser chip 3 is shorter, and the routing between the metalized structure 12 and the pins 11 is shorter, thereby reducing the transmission loss.
In the metallization structure 12 of the present embodiment, the distance between the second metallization transmission portion 123 in the ceramic layer 120 closer to the laser chip 3 and the laser chip 3 is shorter to reduce the trace length between the ceramic layer 120 and the laser chip 3 and reduce the loss. The longer the distance between the second metallization transfer portion 123 in the ceramic layer 120 that is farther from the laser chip 3 and the laser chip 3, and correspondingly, the shorter the distance between the second metallization transfer portion 123 in the ceramic layer 120 that is closer to the pin 11 and the corresponding pin 11, in order to electrically connect the second metallization transfer portion 123 with the pin 11.
In this embodiment, the ceramic envelope 1 may be made of a valvable alloy, alumina, and tungsten copper. Specifically, the bottom of the ceramic envelope 1 is made of tungsten copper, and the metal part of the ceramic envelope 1 is made of valve alloy. The metal part of the ceramic envelope 1 and the metallization 12 are welded together by high temperature. The valveable alloy material has good thermal conductivity and low thermal expansion coefficient, so that the performance of the laser emitting assembly in working in a wide temperature range can be ensured, and the wide temperature characteristic of the laser assembly is improved. At the same time, the metallization structure 12 may ensure good high-frequency performance of the laser emitting assembly.
In order to achieve better air tightness, with reference to fig. 1, in this embodiment, the laser emitting assembly further includes an optical window 4, the optical window 4 is disposed on a side wall of the ceramic package 1, and the optical window 4 is disposed on the light emitting side of the laser chip 3, wherein the optical window 4 allows laser light emitted by at least one or more laser chips 3 to pass through. Wherein, the optical window 4 is a rectangular glass or sapphire optical window 4. Because this optical window 4 is the rectangle form, effective clear aperture is big enough, can hold the light of multichannel chip simultaneously and pass through, and optical window 4 also can other shapes, for example, oval, guarantee can let multichannel light pass through simultaneously can. Moreover, the optical window 4 can be better coupled with the side wall of the ceramic package 1 and the upper cover, which can improve the airtightness of the package.
Further, the laser emission assembly further comprises a semiconductor refrigerator 5 and a heat sink 6, wherein the semiconductor refrigerator 5 is arranged at the bottom of the ceramic tube shell 1, the heat sink 6 is arranged on the semiconductor refrigerator 5, and the transition block 2 is arranged on the heat sink 6. The semiconductor refrigerator 5 is connected with the bottom of the ceramic tube shell 1 through solder or conductive adhesive, and the semiconductor refrigerator 5 adaptively adjusts the working temperature of the laser chip 3, so that the working temperature of the laser chip 3 is stable, and the temperature drift effect is improved. The heat sink 6 is fixedly connected with the semiconductor refrigerator 5 through solder or epoxy glue. Wherein, the heat sink 6 is made of tungsten copper, nickel or aluminum nitride material.
In the present embodiment, the laser emitting assembly further includes a plurality of lenses 7, and the number of the lenses 7 matches the number of the laser chips 3; the lens 7 is arranged on the heat sink 6, and the central optical axis of the lens 7 penetrates through the center of the light emitting surface of the corresponding laser chip 3; the lens 7 is used for shaping the laser light emitted by the laser chip 3.
In addition, the laser emitting assembly further comprises a light detector, a radio frequency matching circuit and a thermistor, wherein the radio frequency matching circuit enables the impedance of the driving circuit corresponding to the laser chip 3 to keep a specified value so as to achieve the purpose of impedance matching. The optical detector, the radio frequency matching circuit and the thermistor are all correspondingly arranged on the transition block 2. The optical detector is used for monitoring the back power of the laser chip 3 so as to adaptively adjust the transmitting power of the laser chip 3 according to actual requirements; the thermistor is used for detecting the working temperature of the laser chip 3 in real time, so that the semiconductor refrigerator 5 adjusts the working temperature of the laser chip 3 according to the temperature detection result of the thermistor, the temperature drift effect is effectively improved, and the wide temperature characteristic of the laser reflection assembly is improved.
Further, as shown in fig. 5 and 6, the laser emitting assembly further includes a circuit board, a wave combining device 8 and a pigtail assembly 9; the ceramic tube shell 1 is welded on a circuit board through a surface-mount technology, and the wave combining device 8 and the tail fiber assembly 9 are fixed on the circuit board; the wave combining device 8 is arranged outside the ceramic package 1, and the wave combining device 8 is arranged between the ceramic package 1 and the pigtail assembly 9.
In this embodiment, the optical path combining part is placed outside the ceramic tube shell 1 of the laser emitting component, so that the packaging cost is further reduced, the packaging process is simplified, and the performance of the laser emitting component is also improved.
In an actual application scenario, a corresponding wave combiner 8 is selected according to the type of the lens 7, in an optional embodiment, as shown in fig. 5, the lens 7 is a collimating lens, the collimating lens shapes laser light emitted by the laser chip 3 into parallel light, the wave combiner 8 is a TFF wave combiner, and multiple paths of parallel light are combined into one beam by a reflection filtering principle and then coupled into a tail fiber assembly 9. In another alternative embodiment, as shown in fig. 6, the lens 7 is a converging lens, the converging lens shapes the laser light emitted by the laser chip 3 into converging light, the wave combiner 8 is an AWG wave combiner, and the plurality of paths of incident light are combined into one beam by using the waveguide principle and then coupled into the tail fiber assembly 9.
Briefly described below, the fabrication and assembly process for the laser emitting assembly: first, the semiconductor cooler 5 is welded to the bottom of the ceramic package 1, and there is almost no welding gap between the semiconductor cooler 5 and the bottom of the ceramic package 1, which can ensure good heat conduction and reliability of the laser emitting assembly.
In the actual manufacturing process, the heat sink 6 and the components thereon are welded outside the ceramic tube shell 1, specifically, the radio frequency matching circuit, the thermistor, the laser chip 3 and the optical detector are welded on the transition block 2, the transition block 2 is welded on the heat sink 6, and then the lens 7 is fixed on the heat sink 6 through the optical coupling platform, thereby forming the heat sink 6 assembly. Then, the welded heat sink 6 assembly is welded on the semiconductor refrigerator 5, the transition block 2 is electrically connected with the metallization structure 12 through a gold wire or a gold layer, and the ceramic tube shell 1 is welded on the circuit board through a surface mounting technology. Finally, the wave combining device 8 and the pigtail assembly 9 are fixed on a circuit board, so that a laser emitting assembly is formed.
The embodiment of the invention reduces the use of a flexible circuit board, directly welds the laser emission component on the circuit board by using a surface-mount technology, and simultaneously, the ceramic tube shell 1 comprises the metallization structure 12, so that the high-frequency performance of the laser emission component is better. In addition, the manufacturing process is simpler and the cost is lower. In the actual use process, different types of lenses 7 and wave combining devices 8 can be selected according to specific scenes, and the lens can be used in cooperation with an AWG (arrayed waveguide grating) or a TFF (thin film transistor), so that the lens has wide applicability.
In practical use, the laser transmitter assembly of the embodiment of the invention is mainly applied to optical modules with a rate of 100G and above, wherein the package type of the optical module can be CFP, CFP2, QSFP28 or QSFPDD. The laser emitting assembly has good air tightness, good wide temperature characteristic and high reliability, and the service life of the laser emitting assembly is prolonged. And compared with the common air-tight packaged component, the soft belt application is reduced, the manufacturing process is simplified, and the cost is reduced.
The embodiment of the invention also provides an optical module, which comprises the laser emitting component, the control module and the circuit board of any one of the embodiments, wherein the control module is arranged on the circuit board, the laser emitting component is welded on the circuit board through a pin 11 of the ceramic tube shell 1, and the control module is connected with the laser emitting component; the control module is used for generating a control signal so as to control the laser emitting assembly to emit corresponding laser.
For the detailed structure of the laser emitting assembly, please refer to fig. 1 to 6 and the related text description, which are not repeated herein.
Different from the prior art, the laser emission assembly provided by the embodiment of the invention comprises a ceramic tube shell, wherein a pin is arranged on the ceramic tube shell, a metallization structure is further arranged on the ceramic tube shell, and the pin is electrically connected with the metallization structure. The ceramic tube shell has better heat conductivity, can ensure the performance of the laser emission component in the working process within a wide temperature range, and improves the wide temperature characteristic. On the other hand, the laser chip is electrically connected with the pin of the ceramic tube shell through the metallization structure to receive the control signal, and the metallization structure has the characteristic of high frequency and low loss and can effectively improve the high-frequency characteristic of the laser emission assembly. Meanwhile, the laser emitting assembly is high in reliability.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. The laser emission assembly is characterized by comprising a ceramic tube shell (1), wherein a pin (11) is arranged at the bottom of the ceramic tube shell (1), a metallization structure (12) is further arranged on the ceramic tube shell (1), and the pin (11) is electrically connected with the metallization structure (12);
the laser emission assembly further comprises a transition block (2), the transition block (2) is arranged in the ceramic tube shell (1), and one or more laser chips (3) are arranged on the transition block (2);
the laser chip (3) is electrically connected with the pins (11) through the metallization structure (12) to receive a control signal, wherein a distance difference exists between the height of the upper surface of the metallization structure (12) and the height of the upper surface of the transition block (2), and the distance difference is within a preset range;
the metallization structure (12) comprises an N-layer of ceramic layer (120), the ceramic layer (120) comprising a first metallization transmission portion (121), a dielectric portion (122) and a second metallization transmission portion (123), the dielectric portion (122) being arranged between the first metallization transmission portion (121) and the second metallization transmission portion (123);
wherein the impedance of the first metallization transmission section (121), the impedance of the dielectric section (122) and the impedance of the second metallization transmission section (123) are matched to each other;
the second metallization transmission parts (123) in the adjacent ceramic layers (120) are staggered with each other, and the distance between the second metallization transmission parts (123) in the ceramic layers (120) and the pins (11) of the ceramic package (1) is gradually reduced in the direction away from the laser chip (3).
2. The laser emitting assembly according to claim 1, characterized in that the first metallization transmission section (121) is configured to be coupled to a system ground signal and the second metallization transmission section (123) is configured to transmit a modulation signal;
each of the ceramic layers (120) includes two of the first metallization transmission portions (121), and the second metallization transmission portion (123) is disposed between the first metallization transmission portions (121).
3. The laser emitting assembly of claim 2, wherein each of said ceramic layers (120) comprises one of said second metallized through portions (123); or
Each of the ceramic layers (120) includes two of the second metallization transmitting portions (123), and the dielectric portion (122) is disposed adjacent to the second metallization transmitting portions (123).
4. The laser emitter assembly according to claim 1, wherein the transition block (2) is a high frequency thin film circuit, and the transition block (2) and the metallization structure (12) are connected by a gold or gold layer.
5. The laser emitter assembly according to claim 1, further comprising an optical window (4), wherein the optical window (4) is disposed on a side wall of the ceramic package (1), and the optical window (4) is disposed on the light exit side of the laser chip (3), wherein the optical window (4) allows laser light emitted by at least one or more laser chips (3) to pass through.
6. The laser emitter assembly according to claim 1, further comprising a semiconductor cooler (5) and a heat sink (6);
the semiconductor refrigerator (5) is arranged at the bottom of the ceramic tube shell (1), the heat sink (6) is arranged on the semiconductor refrigerator (5), and the transition block (2) is arranged on the heat sink (6).
7. The laser emitting assembly according to claim 6, characterized in that it further comprises a plurality of lenses (7), the number of said lenses (7) matching the number of said laser chips (3);
the lens (7) is arranged on the heat sink (6), and the central optical axis of the lens (7) penetrates through the center of the light emitting surface of the corresponding laser chip (3);
the lens (7) is used for shaping the laser emitted by the laser chip (3).
8. An optical module, characterized in that the optical module comprises the laser emitting assembly of any one of claims 1 to 7, a control module and a circuit board, wherein the control module is arranged on the circuit board, the laser emitting assembly is welded on the circuit board through a pin (11) of a ceramic tube shell (1), and the control module is connected with the laser emitting assembly;
the control module is used for generating a control signal so as to control the laser emitting assembly to emit corresponding laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811366990.5A CN109586797B (en) | 2018-11-16 | 2018-11-16 | Laser emitting assembly and corresponding optical module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811366990.5A CN109586797B (en) | 2018-11-16 | 2018-11-16 | Laser emitting assembly and corresponding optical module |
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| Publication Number | Publication Date |
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| CN109586797A CN109586797A (en) | 2019-04-05 |
| CN109586797B true CN109586797B (en) | 2020-05-12 |
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| CN201811366990.5A Active CN109586797B (en) | 2018-11-16 | 2018-11-16 | Laser emitting assembly and corresponding optical module |
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| CN101017956A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Packaging structure and method for high-speed semiconductor light emitting component |
| CN103018856A (en) * | 2012-12-25 | 2013-04-03 | 武汉电信器件有限公司 | High-speed butterfly-packaged light emitter component with drive IC (integrated circuit) |
| CN108008500A (en) * | 2017-12-26 | 2018-05-08 | 武汉电信器件有限公司 | A kind of wide temperature low-power consumption integrates light emission component |
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| JP6232950B2 (en) * | 2013-11-08 | 2017-11-22 | 住友電気工業株式会社 | Light emitting module |
| TWM554243U (en) * | 2017-09-20 | 2018-01-11 | Luxnet Corp | Light transmitter structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101017956A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Packaging structure and method for high-speed semiconductor light emitting component |
| CN103018856A (en) * | 2012-12-25 | 2013-04-03 | 武汉电信器件有限公司 | High-speed butterfly-packaged light emitter component with drive IC (integrated circuit) |
| CN108008500A (en) * | 2017-12-26 | 2018-05-08 | 武汉电信器件有限公司 | A kind of wide temperature low-power consumption integrates light emission component |
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