CN109545759A - A kind of power module architectures and its manufacturing method - Google Patents
A kind of power module architectures and its manufacturing method Download PDFInfo
- Publication number
- CN109545759A CN109545759A CN201811582533.XA CN201811582533A CN109545759A CN 109545759 A CN109545759 A CN 109545759A CN 201811582533 A CN201811582533 A CN 201811582533A CN 109545759 A CN109545759 A CN 109545759A
- Authority
- CN
- China
- Prior art keywords
- substrate
- chip
- power module
- needle stand
- needle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000004033 plastic Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 239000006071 cream Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 2
- 238000012545 processing Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
Abstract
Present invention discloses a kind of power module architectures and its manufacturing methods, including substrate, chip and Pin needle, the chip to be fixed on substrate, and the position of the fixed Pin needle of the substrate is equipped with the needle stand of tubular structure, and the Pin needle passes through needle stand and is fixed on substrate.The advantage of the invention is that the power module architectures have higher production compatibility, and it can be produced using arrangement mode, it uses manpower and material resources sparingly, furthermore modular structure avoids the design of plastic package die salient point, entire cavity body of mould is more regular, the design difficulty and manufacturing cost for greatly reducing mold, improve production efficiency.
Description
Technical field
The present invention relates to power module field, a kind of power module architectures and its manufacturing method are provided.
Background technique
As National Industrial is fast-developing and the needs of strategic development, important composition portion of the power module as power electronics
Point, more and more extensive to be applied to the industries such as aviation, new-energy automobile, photovoltaic, wind energy, aviation, industrial frequency conversion, market prospects will more
Come more wide, the power module of different function and packing forms also comes into being.
Such module has corresponding extraction Pin arrangement according to different application schemes currently on the market, corresponding,
The type chamber of plastic package die just needs to design different salient points, could form different vacancy when pressing mold forms to place and weld
Pin needle, according to the design and operating feature of plastic package die, a set of plastic package die can only form a kind of colloid of shape, thus
Different plastic package dies is needed to configure to meet the plastic packaging shape demand of different Pin needle arrangements, how to reduce setting for plastic package die
Meter and manufacture difficulty are effectively compatible with a variety of Pin needle arrangements, realize scale and cost effective volume production is entire power module
Design and the key point of manufacture.
The prior art is to design salient point in mold corresponding position, product is corresponding after compression molding when designing plastic package die
Position just has corresponding pit and generates, and then carries out tin and weldering Pin needle in groove position, is directed to different Pin needles in this way
Arrangement matches corresponding plastic package die and carrys out operation, during molded, the flowing of resin and the folding of mold
Deng can all generate certain frictional force, plastic package die is caused to be easy to produce abrasion, the especially this mold with bump design
It is easier to wear compared with common regular mold, and then influence homework precision causes product bad and mold bulk life time shortens,
The increase of die cost is not only caused, while the switching between different molds also results in the waste in working hour, production UPH is low, frequency
Numerous more mold exchange also has certain influence on product with stable quality.
Summary of the invention
The technical problem to be solved by the present invention is to realize a kind of power module architectures that are structurally reasonable, facilitating production and its
Manufacturing method.
To achieve the goals above, the technical solution adopted by the present invention are as follows: a kind of power module architectures, including substrate, core
Piece and Pin needle, the chip are fixed on substrate, and the position of the fixed Pi n needle of the substrate is equipped with the needle stand of tubular structure, institute
Pin needle is stated to be fixed on substrate across needle stand.
The bottom periphery of the needle stand is by the way that on tin cream welding substrate, the Pin needle is fixed on by putting tin in needle stand
On substrate in needle stand.
The substrate has a resin for having one layer of encapsulating on one side of needle stand, chip and Pin needle, in the resin coating cover substrate
All needle stands and chip, the thickness of the resin are equal to or slightly lower than the height of needle stand.
The susceptor edges are fixed with the frame extended laterally for connecting with other power modules.
The frame, chip, needle stand pass through tin cream and are welded on substrate.
It is electrical using aluminum wire bonding realization according to circuit is pre-designed between chip and substrate between the chip and chip
Performance.
The substrate is ceramic copper-clad base plate.
It is a kind of for producing the manufacturing method of the power module architectures:
Step 1 passes through tin cream welding manner fixed frame, chip, needle stand on substrate；
Step 2, basis are pre-designed circuit using aluminum wire bonding chip and chip, chip and substrate, realize power module
Electric property；
Step 3 passes through resin-encapsulate in substrate surface；
Pin needle is inserted into needle stand in needle stand inner hole point tin by step 4.
In the step 3, adhesive-spill-preventing operation is carried out to needle stand before carrying out resin-encapsulate, and go after resin-encapsulate
Except anti-overflow plastic structure.
Muti-piece power module is connected by frame, manufacturing method further include:
Step 5, cutting frame, separate power module.
The advantage of the invention is that power module has higher production compatibility, and can be produced using arrangement mode,
It uses manpower and material resources sparingly, furthermore modular structure avoids the design of plastic package die salient point, and entire cavity body of mould is more regular, drops significantly
The low design difficulty and manufacturing cost of mold.
Detailed description of the invention
Below to width attached drawing every in description of the invention expression content and figure in label be briefly described:
Fig. 1 is power module architectures schematic diagram；
Label in above-mentioned figure is equal are as follows: 1, needle stand；2, Pin needle；3, chip；4, substrate；5, resin；6, frame.
Specific embodiment
As shown in Figure 1, power module architectures are mainly by needle stand 1, Pin needle 2, chip 3,6 structure of substrate 4, resin 5 and frame
At substrate 4 (DBC) can use ceramic copper-clad base plate, and resin 5 is layer structure, general to use for encapsulating entire power module
Epoxy resin.
Chip 3 and needle stand 1 are welded on substrate 4 by tin cream, and the welding position of chip 3 and needle stand 1 is according to being pre-designed
Circuit depending on, electric property passes through aluminum wire bonding and realizes between chip 3 and chip 3 and between chip 3 and substrate 4, needle stand 1
It is fixed on the position that substrate 4 is pre-designed installation Pin needle 2 vertically, needle stand 1 is tubular structure and both ends open, the internal diameter of needle stand 1
Slightly larger than 2 outer diameter of Pin needle, needle stand 1 can be passed through for Pi n needle 2 and be fixed on substrate 4, Pin needle 2 in needle stand 1 by putting tin
It is fixed on the substrate 4 in needle stand 1, by the fixed Pin needle 2 of intermediate needle stand 1, can guarantee the fixed reliability of Pi n needle 2,
The structure can help to reduce die change frequency, improve product with stable quality, improve production UPH.
Substrate 4 has the resin 5 for having one layer of encapsulating on one side of needle stand 1, chip 3 and Pin needle 2, and resin 5 covers on substrate 4
All needle stands 1 and chip 3, the thickness of resin 5 are equal to or slightly lower than the height of needle stand 1, and resin 5 can insulate to device
With sealing, guarantee the reliability of power module work.
Frame 6 is welded on the edge of substrate 4 by tin cream, and frame 6 extends laterally for connecting with other power modules, leads to
It crosses and multiple frames 6 is connected, it can be when processing each process, the multiple modules of simultaneous processing or power module continuously connect
It connects, successively passes through production equipment, made one by one, realize the continuity of production, help to improve production efficiency.In addition, frame
When frame 6 also facilitates production staff hold, power module of taking.
The manufacturing method of above-mentioned power module architectures is as follows:
Step 1 passes through tin cream welding manner fixed frame 6, chip 3, needle stand 1 on substrate 4, and welding position is according to design
Depending on drawing；
Step 2, basis are pre-designed circuit, using aluminum wire bonding chip 3 and chip 3, chip 3 and substrate 4, realize power
The electric property of module；
Step 3 is encapsulated on 4 surface of substrate by resin 5 using equipment, forms Resin Wrappage for all components for needle
Seat 1 seals, and 1 design height of needle stand is consistent with the height that resin 5 seals or needle stand 1 is slightly above the height that resin 5 is encapsulated, into
Row resin 5 carries out adhesive-spill-preventing operation to needle stand 1 before encapsulating, and removes anti-overflow plastic structure after resin 5 is encapsulated, to guarantee
When 5 press mold of resin forms, resin 5 be may not flow into 2 hole of Pin needle, it is ensured that the electrical output of Pi n needle 2；
Pin needle 2 is inserted into needle stand 1 in 1 inner hole point tin of needle stand by step 4；
If step 5, muti-piece power module are connected by frame, need to cut frame, separates power module.
The processing of power module is completed since then.
The present invention is exemplarily described above in conjunction with attached drawing, it is clear that the present invention implements not by aforesaid way
Limitation, as long as the improvement for the various unsubstantialities that the inventive concept and technical scheme of the present invention carry out is used, or without changing
It is within the scope of the present invention into the conception and technical scheme of the invention are directly applied to other occasions.
Claims (10)
1. a kind of power module architectures, including substrate, chip and Pin needle, the chip are fixed on substrate, it is characterised in that:
The position of the fixed Pin needle of the substrate is equipped with the needle stand of tubular structure, and the Pin needle passes through needle stand and is fixed on substrate.
2. power module architectures according to claim 1, it is characterised in that: the bottom periphery of the needle stand is welded by tin cream
It connects on substrate, the Pin needle is fixed on the substrate in needle stand by putting tin in needle stand.
3. power module architectures according to claim 2, it is characterised in that: the substrate has needle stand, chip and Pin needle
The resin for having one layer of encapsulating on one side, all needle stand and chip, the thickness of the resin are equal in the resin coating cover substrate
Or the height of slightly below needle stand.
4. power module architectures according to claim 3, it is characterised in that: the susceptor edges, which are fixed with, extends laterally use
In the frame being connect with other power modules.
5. power module architectures according to claim 4, it is characterised in that: the frame, chip, needle stand pass through tin cream
It is welded on substrate.
6. any power module architectures in -5 according to claim 1, it is characterised in that: between the chip and chip,
Basis is pre-designed circuit and realizes electric property using aluminum wire bonding mode between chip and substrate.
7. power module architectures according to claim 6, it is characterised in that: the substrate is ceramic copper-clad base plate.
8. a kind of for producing the manufacturing method of the power module architectures as described in any in claim 1-7, it is characterised in that:
Step 1 passes through tin cream welding manner fixed frame, chip, needle stand on substrate；
Step 2, basis are pre-designed circuit using aluminum wire bonding chip and chip, chip and substrate, realize the electricity of power module
Gas performance；
Step 3 passes through resin-encapsulate in substrate surface；
Pin needle is inserted into needle stand in needle stand inner hole point tin by step 4.
9. manufacturing method according to claim 8, it is characterised in that: in the step 3, to needle stand before progress resin-encapsulate
Adhesive-spill-preventing operation is carried out, and removes anti-overflow plastic structure after resin-encapsulate.
10. manufacturing method according to claim 8 or claim 9, it is characterised in that: muti-piece power module is connected by frame,
Manufacturing method further include:
Step 5, cutting frame, separate power module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811582533.XA CN109545759A (en) | 2018-12-24 | 2018-12-24 | A kind of power module architectures and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811582533.XA CN109545759A (en) | 2018-12-24 | 2018-12-24 | A kind of power module architectures and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109545759A true CN109545759A (en) | 2019-03-29 |
Family
ID=65856885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811582533.XA Pending CN109545759A (en) | 2018-12-24 | 2018-12-24 | A kind of power module architectures and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109545759A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112271165A (en) * | 2020-09-28 | 2021-01-26 | 华为技术有限公司 | Semiconductor packaging structure, manufacturing method thereof and semiconductor device |
| CN115623665A (en) * | 2022-10-21 | 2023-01-17 | 苏州悉智科技有限公司 | Power module packaging structure and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080104653A (en) * | 2007-05-28 | 2008-12-03 | 세크론 주식회사 | Probe sheet, probe card and method of manufacturing the same |
| TW200905822A (en) * | 2007-07-16 | 2009-02-01 | Phoenix Prec Technology Corp | Method of fabricating pin grid array package substrate |
| KR20090046368A (en) * | 2007-11-06 | 2009-05-11 | 엘에스산전 주식회사 | Apparatus and method for laser soldering and fabricating method of power semiconductor module using the same |
| KR20120057356A (en) * | 2010-11-26 | 2012-06-05 | 주식회사 코디에스 | Probe unit for testing chip on glass panel |
| CN107507808A (en) * | 2017-08-23 | 2017-12-22 | 南京晟芯半导体有限公司 | A kind of New IGBT module encapsulation construction |
| CN209515637U (en) * | 2018-12-24 | 2019-10-18 | 芜湖启迪半导体有限公司 | A kind of power module architectures |
-
2018
- 2018-12-24 CN CN201811582533.XA patent/CN109545759A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080104653A (en) * | 2007-05-28 | 2008-12-03 | 세크론 주식회사 | Probe sheet, probe card and method of manufacturing the same |
| TW200905822A (en) * | 2007-07-16 | 2009-02-01 | Phoenix Prec Technology Corp | Method of fabricating pin grid array package substrate |
| KR20090046368A (en) * | 2007-11-06 | 2009-05-11 | 엘에스산전 주식회사 | Apparatus and method for laser soldering and fabricating method of power semiconductor module using the same |
| KR20120057356A (en) * | 2010-11-26 | 2012-06-05 | 주식회사 코디에스 | Probe unit for testing chip on glass panel |
| CN107507808A (en) * | 2017-08-23 | 2017-12-22 | 南京晟芯半导体有限公司 | A kind of New IGBT module encapsulation construction |
| CN209515637U (en) * | 2018-12-24 | 2019-10-18 | 芜湖启迪半导体有限公司 | A kind of power module architectures |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112271165A (en) * | 2020-09-28 | 2021-01-26 | 华为技术有限公司 | Semiconductor packaging structure, manufacturing method thereof and semiconductor device |
| WO2022063283A1 (en) * | 2020-09-28 | 2022-03-31 | 华为技术有限公司 | Semiconductor encapsulation structure and manufacturing method therefor, and semiconductor device |
| CN115623665A (en) * | 2022-10-21 | 2023-01-17 | 苏州悉智科技有限公司 | Power module packaging structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104934405B (en) | Lead frame based on DIP Duo Ji islands and manufacture the method for packaging part with it | |
| CN106847800A (en) | QFN surface-adhered types RGB LED encapsulation modules and its manufacture method | |
| CN104852089B (en) | Integrated encapsulation molding process for ultra-thin polymer lithium ion battery | |
| CN103985692A (en) | Encapsulating structure for AC-DC power circuit and encapsulating method thereof | |
| CN201466022U (en) | Lead frame and chip connecting structure encapsulated with micro-patch diode | |
| CN109545759A (en) | A kind of power module architectures and its manufacturing method | |
| CN110429075A (en) | The exposed encapsulating structure of the more lateral leads of high density and its production method | |
| CN209515637U (en) | A kind of power module architectures | |
| CN208336207U (en) | A kind of biradical island lead frame frame and its SOT33-5L packaging part | |
| CN103606539A (en) | Frame-based flat package adopting opening-optimization technology and manufacturing process thereof | |
| CN108598254A (en) | Filter package method and encapsulating structure | |
| CN106711098A (en) | IC plastic packaging structure and production method thereof | |
| CN202034361U (en) | Semiconductor packaging structure | |
| CN212587519U (en) | LED wafer packaging structure | |
| CN203260570U (en) | Carrier-free novel package based on frame corrosion bump | |
| CN204596785U (en) | Based on the lead frame on DIP Duo Ji island | |
| CN201629329U (en) | Lead frame | |
| CN202084532U (en) | TO92 model encapsulation box and supporting moulds | |
| CN210429868U (en) | Microminiature SMD TOP LED lead frame | |
| CN203871321U (en) | Packaging structure of integrated drive circuit of brushless direct current motor | |
| CN203103286U (en) | Single chip packaging piece capable of realizing SMT (surface mount technology) on basis of cylindrical inductor | |
| CN203553212U (en) | Composable wafer direct packaging COB support | |
| CN102738009A (en) | Manufacturing process of flat packaging piece of AAQFN framework product based on brushing | |
| CN203254606U (en) | DIP (dual-in-line package) lead frame plastic package mold | |
| CN101447465B (en) | Metal carrier band for packaging noncontact module with large size |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 241000 1803, building 3, service outsourcing park, Wuhu high tech Industrial Development Zone, Anhui Province Applicant after: Anhui Changfei Advanced Semiconductor Co.,Ltd. Address before: 241000 1803, building 3, service outsourcing park, high tech Industrial Development Zone, Yijiang District, Wuhu City, Anhui Province Applicant before: WUHU QIDI SEMICONDUCTOR Co.,Ltd. |
|
| CB02 | Change of applicant information |