CN108598254A - Filter package method and encapsulating structure - Google Patents
Filter package method and encapsulating structure Download PDFInfo
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- CN108598254A CN108598254A CN201810353754.3A CN201810353754A CN108598254A CN 108598254 A CN108598254 A CN 108598254A CN 201810353754 A CN201810353754 A CN 201810353754A CN 108598254 A CN108598254 A CN 108598254A
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- base board
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- microns
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
Abstract
The present invention provides a kind of filter package method and encapsulating structure, the packaging method includes：Substrate strip is provided, with multiple base board units, the front of each base board unit is equipped with multiple conductive welding disks, and conductive salient point is respectively formed on multiple conductive welding disks；Filter chip is provided, with multiple chip units, the front of each chip unit is equipped with weld pad corresponding with multiple conductive salient points, and weld pad is bonded with corresponding conductive salient point；Execute encapsulation process, encapsulating compound is enclosed in the outside of multiple conductive salient points, and the gap at least between the front of filling base board unit and the front of chip unit, to form seal chamber between encapsulating compound and the front of multiple conductive salient points, the front of base board unit and chip unit.The filter package method and encapsulating structure of the embodiment of the present invention can reduce packaging cost, improve encapsulation yield and production efficiency.
Description
Technical field
The present invention relates to SAW filter encapsulation technology field more particularly to a kind of filter package method and encapsulation
Structure.
Background technology
The description of this part is only provided discloses relevant background information with the present invention, without constituting the prior art.
SAW filter (SAWF, surface acoustic wave filter) utilizes the pressure with piezoelectric effect
Its filtering characteristic is propagated and is finished receiving in the excitation of surface acoustic wave on electric material.Due to properties of product and design function demand,
It is generally necessary to ensure that filtering chip functional area cannot contact any substance, i.e. cavity structure designs.
Therefore, in order to form cavity, SAW filter encapsulating structure in the prior art is long usually in bare chip
Go out metal salient point, then upside-down mounting is welded on ceramic substrate, is reused metal cap, top sealing or coating process and is subject to module
Sealing forms cavity structure.
Since surface acoustic wave (wavelength is in the range of 2 to 10 microns) is a kind of machinery very sensitive to propagating surface
Wave, and the piezoelectric materials such as lithium tantalate, lithium phosphate prepare the bare chip to be formed, and are meeting and realizing SAW filter work(
While energy, the characteristic of material itself causes it to have the easy fragmentation similar to glass, defect easy to pollute.
In this way, bare chip hard brittle and fragile the characteristics of splitting so that it is more difficult to grow metal salient point process on it；And it grows
Go out the easily contaminated feature of metal salient point combination bare chip, then so that final encapsulating products yield is low.
In addition, the ceramic substrate cost that the prior art uses is higher, and needs to carry out the design and making of mold, and it is mixed
The technology difficulties such as material, curtain coating, lamination, punching are larger, to which packaging technology is complex.Also, ceramics have shrinkage, finished product
Rate is low.
It should be noted that above to the introduction of technical background be intended merely to it is convenient to technical scheme of the present invention carry out it is clear,
Complete explanation, and facilitate the understanding of those skilled in the art and illustrate.Cannot merely because these schemes the present invention
Background technology part is expounded and thinks that above-mentioned technical proposal is known to those skilled in the art.
Invention content
Based on prior art defect above-mentioned, an embodiment of the present invention provides a kind of filter package method and encapsulation knots
Structure can reduce packaging cost, improve encapsulation yield and production efficiency, and simplify packaging technology.
To achieve the goals above, the present invention provides the following technical solutions.
A kind of filter package method, including：
Substrate strip is provided, the substrate strip has multiple base board units, and the front of each base board unit is equipped with multiple
Conductive welding disk is respectively formed conductive salient point on multiple conductive welding disks；
Filter chip is provided, the filter chip has multiple chip units, the front of each chip unit
Equipped with weld pad corresponding with multiple conductive salient points, the weld pad and the corresponding conductive salient point are bonded；
Execute encapsulation process, encapsulating compound are enclosed in the outside of multiple conductive salient points, and at least fill the substrate list
Gap between the front of the positive and described chip unit of member, to the encapsulating compound and multiple conductive salient points, institute
It states and forms seal chamber between the front of the positive and described chip unit of base board unit.
Preferably, the conductive salient point is to be mixed with scaling powder in the front printing of the base board unit using steel plate or silk screen
The mode of tin cream formed.
Preferably, for the thickness of the tin cream between 30 to 80 microns, optimal is 50 microns.
Preferably, the conductive salient point forms copper post for the front first in the base board unit by the way of plating, then
The mode for being formed tin layers by the way of plating in the copper post is formed.
Preferably, for the thickness of the copper post between 10 to 60 microns, optimal is 30 microns；The tin thickness 10 to
Between 30 microns, optimal is 20 microns.
Preferably, the conductive salient point is first to use chemical nickel plating gold plate or NiPdAu to the front of the base board unit
Coating, then tin ball is planted using machine physical on the nickel gold plate or NiPdAu coating, alternatively, in the nickel gold plate or nickel
It is formed in such a way that steel plate or silk-screen printing tin cream form tin ball on porpezite coating.
Preferably, for the thickness of the nickel gold plate or NiPdAu coating between 2 to 10 microns, optimal is 5 microns；It is described
For the height of tin ball between 30 to 80 microns, optimal is 50 microns.
Preferably, the weld pad realizes bonding with the corresponding conductive salient point by the way of Reflow Soldering.
Preferably, before bonding the step of weld pad is with the corresponding conductive salient point, the method further includes：Institute
State formation scaling powder layer on weld pad and/or the conductive bumps.
Preferably, the step of packaging process is to be bonded a sheet epoxide polymerization at the back side of the filter chip
Object, heat up heating while vacuumizing, and the sheet epoxy polymer softening is full of the sky between the adjacent chip unit
Gap forms the encapsulating compound after the sheet epoxy polymer solidification.
Preferably, the temperature of the heating heating is 30 to 100 degrees Celsius, and optimal is 50 to 60 degrees Celsius.
A kind of filter package structure, including：
The front of base board unit, the base board unit is equipped with multiple conductive welding disks, distinguishes shape on multiple conductive welding disks
At there is conductive salient point；
Chip unit, the front of the chip unit are equipped with weld pad corresponding with multiple conductive salient points, the weldering
Pad is bonding with the corresponding conductive salient point；
The encapsulating compound being enclosed on the outside of multiple conductive salient points, the encapsulating compound are at least filling the base board unit just
Gap between face and the front of the chip unit, to the encapsulating compound and multiple conductive salient points, the substrate
Seal chamber is formed between the front of the positive and described chip unit of unit.
The filter package method and encapsulating structure of the embodiment of the present invention form conductive stud by the front in base board unit
Point is damaged and is contaminated so as to avoid chip unit instead of the mode in the long salient point of filter chip, to improve envelope
Fill yield and production efficiency.
In addition, the filter package method and encapsulating structure of the embodiment of the present invention need not use expensive ceramic substrate,
Instead conventional organic substrate, packaging technology are simplified, and packaging cost is relatively low, and operability is strong.
With reference to following description and accompanying drawings, the particular embodiment of the present invention is disclosed in detail, specifies the principle of the present invention
It can be in a manner of adopted.It should be understood that the embodiment of the present invention is not so limited in range.It is wanted in appended right
In the range of the spirit and terms asked, the embodiment of the present invention includes many changes, modifications and is equal.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
It is used in other embodiments, it is combined with the feature in other embodiments, or substitute the feature in other embodiments.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or component when being used herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, one integral piece, step or component.
Description of the drawings
Attached drawing described here is only used for task of explanation, and is not intended to limit model disclosed by the invention in any way
It encloses.In addition, the shape and proportional sizes etc. of each component in figure are only schematical, it is used to help the understanding of the present invention, and
It is not the specific shape and proportional sizes for limiting each component of the present invention.Those skilled in the art under the teachings of the present invention, can
Implement the present invention to select various possible shapes and proportional sizes as the case may be.In the accompanying drawings：
Fig. 1 is the structural schematic diagram of the base board unit provided；
Fig. 2 is the structural schematic diagram that conductive salient point is formed on base board unit；
Fig. 3 is the positional structure schematic diagram of weld pad and base board unit and chip unit before conductive salient point bonding；
Fig. 4 is the positional structure schematic diagram that weld pad bonds metacoxal plate unit and chip unit with conductive salient point；
Fig. 5 is the filter package structure that the first preferred embodiment to be formed is prepared using filter package method of the present invention
Schematic diagram；
Fig. 6 is the filter package structure that the second preferred embodiment to be formed is prepared using filter package method of the present invention
Schematic diagram.
Specific implementation mode
In order to make those skilled in the art more fully understand the technical solution in the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
The every other embodiment that technical staff is obtained without making creative work, should all belong to guarantor of the present invention
The range of shield.
It should be noted that when element is referred to as " being set to " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement for illustrative purposes only, are not offered as being unique embodiment.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the Listed Items of pass.
An embodiment of the present invention provides a kind of filter package methods, may include steps of：
As depicted in figs. 1 and 2, step S1：Substrate strip is provided, substrate strip has multiple base board units 100, each substrate list
The front 101 of member 100 is equipped with multiple conductive welding disks 103, and conductive salient point 106 is respectively formed on multiple conductive welding disks 103.
In the present embodiment, base board unit 100 can be defined as its front 101 (such as in face of the surface of chip unit 200
The upper surface that Fig. 1 and 2 is illustrated), another side is the back side 102 (lower surface anticipated as illustrated in fig. 1 and 2).
Substrate strip can be organic plates, be specifically as follows pcb board.Also, multiple conductive welding disks 103 can be respectively by each
From conductive column 104 be connected to the back side 102 of base board unit 100, and form outer pin at the back side of base board unit 100 102
105。
According to the difference of encapsulating structure, outer pin 105 may finally be variously formulated, such as BGA (Ball Grid
Array, welded ball array encapsulation), LGA (Land Grid Array, contact array formula encapsulation), QFN (Quad Flat No-
LeadPackage, quad flat non-pin package) etc..Preferably, as shown in fig. 6, could be formed with gold in outer pin 105
Belong to ball 400 or square metal block.
In the first preferred embodiment, the generation type of conductive salient point 106 can be, using steel plate or silk screen in substrate list
Print the tin cream for being mixed with scaling powder in the front 101 of member 100.In this embodiment, the thickness of tin cream is between 30 to 80 microns, most
Excellent is 50 microns.
In the second preferred embodiment, the generation type of conductive salient point 106 can be, first in the front of base board unit 100
101 form copper post by the way of plating, then plating forms tin layers in copper post.In this embodiment, the thickness of copper post is 10
To between 60 microns, optimal is 30 microns.For tin thickness between 10 to 30 microns, optimal is 20 microns.
In third preferred embodiment, the generation type of conductive salient point 106 can be, first to the front of base board unit 100
101 use chemical nickel plating gold plate or NiPdAu coating, then plant tin using machine physical on nickel gold plate or NiPdAu coating
Ball, alternatively, forming tin ball by the way of steel plate or silk-screen printing tin cream on nickel gold plate or NiPdAu coating.In the implementation
In example, for the thickness of nickel gold plate or NiPdAu coating between 2 to 10 microns, optimal is 5 microns.The height of tin ball is 30 to 80
Between micron, optimal is 50 microns.
As shown in Figure 3 and Figure 4, step S2：Filter chip is provided, filter chip has multiple chip units 200,
Front 202 is equipped with weld pad 203 corresponding with multiple conductive salient points 106, and weld pad 203 is bonded with corresponding conductive salient point 106.
In the present embodiment, chip unit 200 can be defined as its front 202 (such as in face of the surface of base board unit 100
The lower surface that Fig. 3 and 4 is illustrated), another side is the back side 201 (upper surface anticipated as shown in Figures 3 and 4).
Filter chip is made of tantalum compound semi-conducting material or/and phosphorus compound semi-conducting material.Weld pad 203 with lead
Electric salient point 106 may be used Reflow Soldering mode and realize bonding.
In addition, according to the difference of 106 material of conductive salient point, may choose whether on weld pad 203 and/or conductive salient point 106
Form scaling powder layer.
Specifically, if conductive salient point 106 is the side according to the tin cream for being mixed with scaling powder of above-mentioned first preferred embodiment
When formula formation, then Reflow Soldering, chip unit 200 and substrate can be directly carried out when weld pad 203 and conductive salient point 106 bond
Unit 100 can be bonded directly together.
If conductive salient point 106 is above-mentioned second and the copper post of third preferred embodiment powers on tin coating, alternatively, for nickel gold
Or NiPdAu coating can then apply one layer of scaling powder when the mode of tin ball being added to be formed on weld pad 203 and/or conductive salient point 106,
Reflow Soldering is carried out again, and chip unit 200 and base board unit 100 is made to be securely bonded together.
In the present embodiment, the main function that scaling powder layer is formed on weld pad 203 and/or conductive salient point 106 is to remove
Solder and by the oxide on weldering base material surface, makes metal surface reach necessary cleannes, the oxygen again on surface when preventing welding
Change, reduce solder surface tension, improves welding performance.After the completion of welding, scaling powder can vapor away.
As shown in Figure 5 and Figure 6, step S3：Execute encapsulation process, encapsulating compound 300 are enclosed in the outer of multiple conductive salient points 106
Side, and the gap at least between the front 101 of filling base board unit 100 and the front 202 of chip unit 200, to encapsulate
It is formed between material 300 and the front 202 of multiple conductive salient points 106, the front 101 of base board unit 100 and chip unit 200 close
Seal chamber 302.
Packaging process is specifically as follows, and a sheet epoxy polymer is bonded at the back side of filter chip, what is vacuumized
Heat up heating simultaneously, and full of the gap between adjacent chips unit 200, sheet epoxy polymer exists the softening of sheet epoxy polymer
The encapsulating compound 300 is formed after solidification.
Conventional machine molding plastic packaging material needs customize special mold, of high cost, complex process according to product characteristic.And
The present embodiment directly fits sheet epoxy polymer at the back side of filter chip 201, and plastic packaging material is moulded instead of conventional machine,
Technique is set more to simplify.
In addition, anaerobic atmosphere can be built by vacuumizing, sheet epoxy polymer is avoided to form encapsulating compound 300 in subsequent cure
During generate bubble.
Also, heat up heating while vacuumizing, and has certain mobility after the softening of sheet epoxy polymer, simultaneously
Apply external force to squeeze, so that chip unit 200 and base board unit 100 be sealed up, conductive salient point 106, chip unit 200,
Seal chamber 302 is formed between base board unit 100.Wherein, the temperature of heating is 30 to 100 degrees Celsius, and optimal is 50 to 60 Celsius
Degree.
It should be noted that the packaging method of the embodiment of the present invention not only can be adapted for the envelope of SAW filter
Dress, can be applicable to the encapsulation of fluid filter.
After completing above-mentioned steps, cutting action can be executed, to obtain single filter package structure.Specific cutting
Any appropriate prior art may be used in process, and the present invention does not repeat this.
Fig. 5 and Fig. 6 show the encapsulating structure obtained using above-mentioned filter package method, the filter package structure packet
Base board unit 100 is included, front 101 is equipped with multiple conductive welding disks 103, conductive stud is respectively formed on multiple conductive welding disks 103
Point 106；Chip unit 200, front 101 be equipped with weld pad 203 corresponding with multiple conductive salient points 106, weld pad 203 with it is corresponding
Conductive salient point 106 it is bonding；It is enclosed in the encapsulating compound 300 in 106 outside of multiple conductive salient points, at least fills base board unit
Gap between 100 front 101 and the front 202 of chip unit 200, to encapsulating compound 300 and multiple conductive salient points
106, seal chamber 302 is formed between the front 101 of base board unit 100 and the front 202 of chip unit 200.
The filter package method and encapsulating structure of the embodiment of the present invention, by being formed in the front 101 of base board unit 100
Conductive salient point 106 is damaged and dirty instead of the mode in 200 long salient point of chip unit so as to avoid chip unit 200
Dye, to improve encapsulation yield and production efficiency.
In addition, the filter package method and encapsulating structure of the embodiment of the present invention need not use expensive ceramic substrate,
Instead conventional organic substrate, packaging technology are simplified, and packaging cost is relatively low, and operability is strong.
The foregoing is merely several embodiments of the present invention, and those skilled in the art is according to invention file disclosure
Various changes or modifications can be carried out without departing from the spirit and scope of the present invention to the embodiment of the present invention.
Claims (12)
1. a kind of filter package method, which is characterized in that including：
Substrate strip is provided, there are the substrate strip multiple base board units, the front of each base board unit to be equipped with multiple conductions
Pad is respectively formed conductive salient point on multiple conductive welding disks；
Filter chip is provided, there are the filter chip multiple chip units, the front of each chip unit to be equipped with
Weld pad corresponding with multiple conductive salient points bonds the weld pad and the corresponding conductive salient point；
Execute encapsulation process, encapsulating compound are enclosed in the outside of multiple conductive salient points, and at least fill the base board unit
Gap between the front of the positive and described chip unit, to the encapsulating compound and multiple conductive salient points, the base
Seal chamber is formed between the front of the positive and described chip unit of plate unit.
2. filter package method as described in claim 1, which is characterized in that the conductive salient point is using steel plate or silk screen
It is formed in the mode for the tin cream that the front printing of the base board unit is mixed with scaling powder.
3. filter package method as claimed in claim 2, which is characterized in that the thickness of the tin cream 30 to 80 microns it
Between, optimal is 50 microns.
4. filter package method as described in claim 1, which is characterized in that the conductive salient point is first in the substrate list
The front of member forms copper post by the way of plating, then forms the mode shape of tin layers by the way of plating in the copper post
At.
5. filter package method as claimed in claim 4, which is characterized in that the thickness of the copper post 10 to 60 microns it
Between, optimal is 30 microns；For the tin thickness between 10 to 30 microns, optimal is 20 microns.
6. filter package method as described in claim 1, which is characterized in that the conductive salient point is first to the substrate list
The front of member uses chemical nickel plating gold plate or NiPdAu coating, then machine is utilized on the nickel gold plate or NiPdAu coating
Physics plants tin ball, alternatively, forming tin ball using steel plate or silk-screen printing tin cream on the nickel gold plate or NiPdAu coating
Mode is formed.
7. filter package method as claimed in claim 6, which is characterized in that the thickness of the nickel gold plate or NiPdAu coating
For degree between 2 to 10 microns, optimal is 5 microns；For the height of the tin ball between 30 to 80 microns, optimal is 50 microns.
8. filter package method as described in claim 1, which is characterized in that the weld pad and the corresponding conductive salient point
Bonding is realized by the way of Reflow Soldering.
9. filter package method as described in claim 1, which is characterized in that described led with corresponding bonding the weld pad
Before the step of electric salient point, the method further includes：Scaling powder layer is formed on the weld pad and/or the conductive bumps.
10. filter package method as described in claim 1, which is characterized in that the step of packaging process is, described
The back side of filter chip is bonded a sheet epoxy polymer, and heat up heating while vacuumizing, the sheet epoxide polymerization
Object softening forms the encapsulating compound full of the gap between the adjacent chip unit after the sheet epoxy polymer solidification.
11. filter package method as claimed in claim 10, which is characterized in that it is described heating heating temperature be 30 to
100 degrees Celsius, optimal is 50 to 60 degrees Celsius.
12. a kind of filter package structure, which is characterized in that including：
The front of base board unit, the base board unit is equipped with multiple conductive welding disks, is respectively formed on multiple conductive welding disks
Conductive salient point；
Chip unit, the front of the chip unit are equipped with weld pad corresponding with multiple conductive salient points, the weld pad with
The corresponding conductive salient point is bonding；
The encapsulating compound being enclosed on the outside of multiple conductive salient points, the encapsulating compound at least fill the base board unit front with
And the gap between the front of the chip unit, to the encapsulating compound and multiple conductive salient points, the base board unit
Positive and described chip unit front between form seal chamber.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109473539A (en) * | 2018-12-14 | 2019-03-15 | 苏州科阳光电科技有限公司 | A kind of filter chip mould group and preparation method thereof |
| CN111669129A (en) * | 2020-06-05 | 2020-09-15 | 中国电子科技集团公司第十三研究所 | Amplifier chip |
| CN113794461A (en) * | 2021-09-13 | 2021-12-14 | 江苏卓胜微电子股份有限公司 | Module chip packaging structure and circuit board |
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