TW515057B - Stackable flip-chip ball grid array package body - Google Patents

Stackable flip-chip ball grid array package body Download PDF

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Publication number
TW515057B
TW515057B TW089109066A TW89109066A TW515057B TW 515057 B TW515057 B TW 515057B TW 089109066 A TW089109066 A TW 089109066A TW 89109066 A TW89109066 A TW 89109066A TW 515057 B TW515057 B TW 515057B
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TW
Taiwan
Prior art keywords
substrate
package
chip
pads
flip
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Application number
TW089109066A
Other languages
Chinese (zh)
Inventor
Chia Chi Chien
Original Assignee
Via Tech Inc
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Application filed by Via Tech Inc filed Critical Via Tech Inc
Priority to TW089109066A priority Critical patent/TW515057B/en
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Publication of TW515057B publication Critical patent/TW515057B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Wire Bonding (AREA)

Abstract

A kind of stackable flip-chip ball grid array package body is disclosed in the present invention. The package body contains an IC chip and a flip-chip substrate that has no recessed die cavity. On the upper surface of the substrate, plural bump pads (closer to the center) and a plurality of the first ball pads (closer to the outer periphery) are disposed. The substrate is provided with plural circuit vias and plural interconnects for electrically connecting with the bump pads, the first ball pads and the second ball pads. The IC chip is provided with plural bonding pads; and plural solder bumps or conductive polymer bumps are disposed between the bonding pads and the corresponding bump pads for electrically connecting the IC chip to the flip-chip substrate. The first ball pad position on the upper side of the package body corresponds to the second ball pad on the lower side of the package body; and plural balls are soldered and connected to each other between the first ball pad and the second ball pad. The first ball pad also can be connected to an attached device or a detecting apparatus. In addition, the second ball pad can be connected to an attached device or a printed circuit board.

Description

五、發明說明(1) 陣列(bal 1 一種可重複堆 本發明k供一種覆晶(^ 1丨p - c h i p )球袼 grid array,BGA)封裝體(package),尤指 疊(stackable)的覆晶球格陣列封裝體。V. Description of the invention (1) Array (bal 1 a repeatable stack) The present invention provides a chip array (BGA) grid array (BGA) package, especially a stackable Flip-chip ball grid array package.

FfKLD in材的發展,各種輕、薄、短小的封 裝體不斷地被開發出來,覆晶BGA封裝體就是复 在覆晶BGA封裝體中,晶片(^㈠不爯县腺拉” ,人μ /· 乃1 坏冉疋將接合墊(bonding pad)、、·生由打金線(Wlre b〇nding)來連接到封 是反轉過來透過焊料凸嫂、兹、土 · <汗了叶ϋ塊holder bump)或導電聚合物凸 塊(conduct ive p〇lymer bump)來連接到封裝基, 此覆晶BGA封裝體可提升電路密度及降低電路的寄生效應 (parasitic effect)。儘管如此,對於更高速度與更高密 度的封裝需求’目前的覆晶BGA封裝體仍感到力有未逮, 因此有必要發展封裝密度更高的覆晶BGA封裝體。 一=參考圖一,圖一為習知覆晶球格陣列封裝體丨〇的剖 面示意圖。圖一所示為一習知兩層(tw〇-layer)板覆晶BGA 封裝體ίο,其主要包含有一封裝基板(substrate) 12及一 I C晶片(d i e ) 1 4固定在封裝基板1 2的表面上。封裝基板1 2 包含有二銅導線層(Cu trace layer) 16、18分別設在封 裝基板1 2的上下兩側,以及複數個電路導通(v丨a) 2 〇用來 連接銅導線層1 6與銅導線層1 8。 覆晶BGA封裝體10另包含有凸塊焊墊(s〇ide]r bumpWith the development of FfKLD materials, various light, thin, and short packages have been continuously developed. Chip-on-chip BGA packages are multiplexed in chip-on-chip BGA packages. The chip (^ ㈠ 不 腺 县 阴 拉 ", person μ /乃 1 Bad Ran 疋 Connected the bonding pad (、) to the seal (Wlre bond) to the seal, which was reversed and passed through the solder bumps, 兹, and soil. ≪ Sweat the leavesϋ Block bump or conductive polymer bump to connect to the package base, this flip-chip BGA package can increase circuit density and reduce parasitic effect of the circuit. However, for more High-speed and higher-density packaging needs' The current flip-chip BGA package still feels powerless, so it is necessary to develop a flip-chip BGA package with a higher packing density. I = Refer to Figure 1. A schematic cross-sectional view of a flip-chip ball grid array package. Figure 1 shows a conventional two-layer (two-layer) flip-chip BGA package, which mainly includes a package substrate 12 and an IC. A die 1 4 is fixed on the surface of the package substrate 12. The package substrate 1 2 includes two copper trace layers (Cu trace layers) 16 and 18 respectively provided on the upper and lower sides of the package substrate 12 and a plurality of circuit conduction (v 丨 a) 2 〇 used to connect the copper conductor layers 1 6 With copper wire layer 18. The flip-chip BGA package 10 further includes a bump pad.

515057 五、發明說明(2) p a d ) 2 2、複數個錫球焊塾(s 0 1 d e r b a 1 1 p a d ) 2 4分別設 在銅導線層1 6、1 8的表面,以及二綠漆層(solder mask) 2 6、2 8分別覆蓋在凸塊焊塾2 2、錫球焊墊2 4之外的銅導線 層16、18表面。凸塊焊墊22、錫球焊墊2 4都是製作在銅導 線層1 6、1 8的表面上,並利用綠漆層2 6、2 8來做為絕緣 層0 1C晶片14表面設有複數個接合墊(bonding pad) 30, 接合墊30的位置則對應於封裝基板12之凸塊焊墊22的位 置。覆晶B G A封裝體1 0在I C晶片1 4之接合墊3 0與封裝基板 12之凸塊焊墊22之間設有複數個焊料凸塊(s〇lde:r bump) 32’用來固定並電連接I C晶片14。封裝基板1 2與I C晶片1 4 之間的空隙可視需要’注入一底部密封層(e ρ 〇 χ y underfill 1&761:)34予以填滿,以保護封裝體1〇免受惡 劣環境的影響,同時消除焊料凸塊3 2連接處的應力。 覆晶BGA封裝體10完成後,再利用複數個錫焊球36將 覆晶BGA封裝體10固定在一印刷電路板(print circuit b^ard,PCB) 38上,使覆晶BGA封裝體1〇與印刷電路板38 件以電連接在一起。 =圖一所示,…曲乃η尸汗榭出的電流經 裝基板12的凸塊焊塾22上,再經由銅層L 书路蛉通20-銅導、線層18的路線傳送到錫球焊墊“上,最515057 V. Description of the invention (2) pad) 2 2. A plurality of solder ball pads (s 0 1 derba 1 1 pad) 2 4 are respectively provided on the surfaces of copper wire layers 16 and 18, and two green paint layers ( solder masks 2 6 and 2 8 respectively cover the surfaces of the copper wire layers 16 and 18 other than the bump pads 2 2 and the solder ball pads 2 4. The bump pads 22 and the solder ball pads 24 are made on the surfaces of the copper wire layers 16 and 18, and the green paint layers 26 and 28 are used as the insulating layer. The surface of the 1C chip 14 is provided with A plurality of bonding pads 30 are formed. The positions of the bonding pads 30 correspond to the positions of the bump pads 22 of the package substrate 12. A flip-chip BGA package 10 is provided with a plurality of solder bumps (solder: r bumps) 32 'between the bonding pads 30 of the IC chip 14 and the bump pads 22 of the package substrate 12. Electrically connected to the IC chip 14. The gap between the package substrate 12 and the IC chip 14 may be filled with a bottom sealing layer (e ρ χ underfill 1 & 761 :) 34 as needed to protect the package body 10 from the influence of harsh environments. At the same time, the stress at the solder bump 3 2 connection is eliminated. After the flip-chip BGA package 10 is completed, a plurality of solder balls 36 are used to fix the flip-chip BGA package 10 on a printed circuit board (print circuit b ^ ard, PCB) 38 to make the flip-chip BGA package 10. 38 pieces of printed circuit board are electrically connected together. = As shown in Figure 1, ... The current from Qu Nai Khan ’s body is transmitted to the solder via the bump soldering pad 22 of the mounting substrate 12, and then to the tin via the copper layer L, the book conductor 20, the copper conductor, and the wire layer 18. Ball pad "on, most

515057 五、發明說明(3) .、、'、、、 後I C晶片1 4所輸出的電流經由錫焊球3 6傳送到印刷電 3 8上。同樣的’印刷電路板3 8也可以經由同樣的路線板 反的方向將電流輸入I C晶片1 4之内。 以相 目前所使用的覆晶BG A封裝體1 〇並不能重複堆疊在 他封裝體上方,使得印刷電路板38上只能設置單層&的其 BGA封裝體1 0。當印刷電路板38設置許多不同功能的产'晶 B G A封裝體1 0時’每一個覆晶B G A封裝體1 〇都需要佔用E曰曰 電路板38的面積,使得配線板層級(b〇ard 1 eve 1 )的甸/刷 雄、度無法進'一步提幵。而在南速電路(high-speed, 以]:(:1^1:1)中,如果多種覆晶30八封裝體1〇散佈在印刷電 路板38上’高頻信號的同步性(synchronization)會受到 電子線路佈局(layout)分佈的影響,而無法取得時序— 的信號。 目前已有若干可重複堆疊的封裝結構被發明且已取得 專利。例如:美國專利案號5,5 9 8,0 3 3—案中提出一種微 型可堆豐的 BGA封裝結構(micro-BGA stacking scheme), 但疋其結構係採用打金線(w i r e b ο n d i n g)的方式來固定I C 晶片。而美國專利案號5,5 9 4,2 7 5—案中則提出另一種可 堆®的BG A封裝結構,同樣採用打金線的技術來固定丨(;晶 片’並應用於S0J(small out - line J-lead )封裝領域之 中0 515057 五、發明說明(4) "—'' '~ --- 因此本發明之主要目的在於 一種 晶球格陣列封裝俨,以,隹丰、/、 重複堆疊的覆 L干町裝體,以進一步提昇配線板層級的封奘金设 度’並提升該封裝體高頻信號的同步性。吸的封裝进 明參考圖一與圖三,圖二為束發明兩s紅费曰 列封裝體40的示意圖,卜為$本晶球格陣 Π η示^圖。本發明為—種可重複堆疊的覆晶球 列(ball grid array,BGA)封裝體40,覆晶BGA基板可為 兩層板(1评〇-1&761〇或多層板(1111111:卜1376;〇的結構,在<本 文中以說明一兩層板覆晶BGA封裝體40的結構為主,但是 本發明同樣可以推廣到四層板或其他多層板之覆晶bga2 板封裝體上。 & 如圖二與圖三所示,覆晶BGA封裝體40主要由一基板 42以及一 1C晶片44所構成。基板42包含有二銅導線層(Cu trace layer) 46、48分別設於基板42的上下兩側,以及 複數個電路導通(v i a ) 5 0用來連接銅導線層4 6與銅導線層 48。1C晶片44是以覆晶(fl iP —chiP)的方式固定在基板42 之上,因此基板42並沒有設置一晶片固定腔(recessed die cavity)0 基板42可以是一多晶片模組(mul七i—chiP module, MCM)的基板(未顯示),也就是說可在同一基板上同時安裝 多個晶片,為了簡化說明’在本文中舉出僅容納一個晶片 515057 五、發明說明(5) 44的基板42做為說明。此外,覆晶BGA封裝體40可以依據 不同的電路設計,在基板4 2的表面或内部裝設被動元件 (passive components),例如在基板42的頂部,底部或内 部安裝電阻器(resistor)或電容器(capacitor)。 基板4 2上的銅導線層4 6、4 8表面分別覆蓋一綠漆層 (solder mask) 52以及一綠漆層54,綠漆層52與54的厚度 通常介於1 5〜3 Ομ m之間,而覆蓋綠漆層5 2、5 4之後的基 板42,總厚度大約介於1 〇〇〜l ooo# m之間。綠漆層52的表 面預留有許多開孔(opening),用來形成複數個凸塊焊塾 (bump pad) 56以及複數個錫球焊墊(solder ball pad) 5 8。同樣的,綠漆層5 4的表面也預留有許多開孔,以做為 複數個錫球焊墊6 0。 凸塊焊墊5 6與錫球焊墊5 8都是位於基板4 2的上側,錫 球焊墊6 0則位於基板4 2的下侧。此外,凸塊焊墊5 6分佈在 一預定區域6 2之内,而錫球焊墊5 8則是分佈在預定區域6 2 之外。凸塊焊墊5 6通常在裸露的銅導線層46表面形成一層 抗腐蝕層(anti-tarnish layer),例如在裸露的銅導線層 4 6表面鍍上一層鎳/金薄膜,錫球焊墊5 8與6 〇也經常在裸 露的銅導線層4 6與4 8表面分別鍍上一層鎳/金薄膜。銅導 線層4 6、4 8的圖案以及電路導通5 0的位置經過適當的設 計’可以使凸塊焊墊5 6電連接至錫球焊墊5 8或錫球焊墊6 0 上。 515057 五、發明說明(6) 一般而言,1C晶片的厚度約在125〜30 0" m之間,且 I C晶片4 4的下側設有複數個接合塾(bonding pad) 64,接 合墊6 4的位置對應於基板4 4上凸塊焊墊5 6的位置。I C晶片 44利用複數個焊料凸塊(solder bump)或導電聚合物凸塊 (conductive polymer bump) 66來固定在基板42的預定區 域6 2上,焊料凸塊或導電聚合物凸塊6 6設在I C晶片44的接 合墊64與基板42的凸塊焊墊56之間,使1C晶片44得以電連 接到基板42上。 基板42與1C晶片44之間的空隙距離(接合後)約在30〜參 8 0/z m之間,此時可視覆晶技術的需求,進行一環氧基密 封製程(epoxy underfill process),注入一底部密封層 (under f i 1 1 layer) 6 8填滿基板42與1C晶片4 4之間的空 隙,以保護覆晶BGA封裝體40免受惡劣環境的影響,同時 消除焊料凸塊6 6連接處的應力。 請參考圖四,圖四為本發明覆晶BGA封裝體相堆疊時 的剖面示意圖。如圖四所示,覆晶B G A封裝體4 0 a上側之錫 球焊墊58a的位置對應於另一覆晶BGA封裝體40b下側的錫 球焊墊60b。當在覆晶BGA封裝體40a上堆疊覆晶BGA封裝體 40b時,先使覆晶BGA封裝體40b (已於錫球焊墊60b上植錫鲁 焊球6 8 )對準下方的覆晶B G A封裝體4 0 a,接著進行迴焊 (solder re- flow),以固定並電連接覆晶BG A封裝體40b。515057 V. Description of the invention (3) The current output by the IC chip 14 after the ... is transmitted to the printed circuit 38 through the solder balls 36. The same 'printed circuit board 38 can also input current into the IC chip 14 through the same direction of the circuit board. For example, the currently used flip-chip BG A package 10 cannot be repeatedly stacked on top of other packages, so that the printed circuit board 38 can only be provided with a single-layer & BGA package 10. When the printed circuit board 38 is provided with many different functions of the "crystalline BGA package 10", each flip-chip BGA package 10 needs to occupy the area of the circuit board 38, so that the wiring board level (bold 1 eve 1) Dian / Baoxiong, Du can't go any further. In a high-speed circuit (in): (: 1 ^ 1: 1), if a variety of flip-chip 30-eight packages 10 are scattered on the printed circuit board 38, the synchronization of high-frequency signals (synchronization) It will be affected by the layout of the electronic circuit layout and cannot obtain the timing signal. At present, several repeatable stacking packaging structures have been invented and patented. For example: US Patent No. 5, 5 9 8, 0 3 3—The case proposes a micro-BGA stacking scheme, but the structure of the structure is to fix the IC chip with a wireb οnding method. US Patent No. 5 , 5 9 4, 2 7 5—In the case, another stackable BG A package structure is proposed, which also uses gold wire technology to fix 丨 (; chip 'and applied to S0J (small out-line J-lead ) In the field of packaging, 0 515057 V. Description of the invention (4) "-'' '~ --- Therefore, the main purpose of the present invention is a crystal ball grid package package. L dry town body to further enhance the seal of the wiring board level Gold setting and improve the synchronization of the high-frequency signal of the package. Refer to Figures 1 and 3 for the package that is sucked. Figure 2 is a schematic diagram of the two 40 s red fee package 40 of the invention. The ball grid array Π η is shown in the figure. The present invention is a re-stackable ball grid array (BGA) package 40. The flip-chip BGA substrate can be a two-layer board (1 Comment 0-1 & 761). 〇 or multi-layer board (1111111: Bu 1376; 〇 structure, in this article to explain the structure of a two-layer board flip-chip BGA package 40, but the invention can also be extended to four-layer board or other multi-layer board On the flip chip bga2 board package. &Amp; As shown in Figures 2 and 3, the flip chip BGA package 40 is mainly composed of a substrate 42 and a 1C wafer 44. The substrate 42 includes two copper wire layers (Cu trace layers) 46, 48 are respectively provided on the upper and lower sides of the substrate 42, and a plurality of circuit vias 50 are used to connect the copper wire layer 46 and the copper wire layer 48. The 1C chip 44 is a flip-chip (fl iP — chiP) method is fixed on the substrate 42, so the substrate 42 is not provided with a recessed die cavity ) 0 The substrate 42 may be a substrate (not shown) of a multi-chip module (mulchi-chiP module, MCM), that is, multiple wafers may be mounted on the same substrate at the same time. In order to simplify the description, The substrate 42 containing only one wafer 515057 is described in V. Description of Invention (5) 44 as an illustration. In addition, the flip-chip BGA package 40 can be equipped with passive components on the surface or inside of the substrate 42 according to different circuit designs, such as a resistor or capacitor on the top, bottom or inside of the substrate 42 (Capacitor). The surfaces of the copper wire layers 4 6 and 4 8 on the substrate 42 are respectively covered with a green paint layer 52 and a green paint layer 54. The thickness of the green paint layers 52 and 54 is usually between 15 and 30 μm. The total thickness of the substrate 42 after covering the green lacquer layers 5 2 and 5 4 is approximately 100˜100 μm. A plurality of openings are reserved on the surface of the green paint layer 52 for forming a plurality of bump pads 56 and a plurality of solder ball pads 5 8. Similarly, many openings are reserved on the surface of the green paint layer 54 to serve as a plurality of solder ball pads 60. Both the bump pads 56 and the solder ball pads 58 are located on the upper side of the substrate 42, and the solder ball pads 60 are located on the lower side of the substrate 42. In addition, the bump pads 56 are distributed within a predetermined area 62, and the solder ball pads 58 are distributed outside the predetermined area 62. The bump pad 5 6 usually forms an anti-tarnish layer on the surface of the exposed copper wire layer 46. For example, the surface of the exposed copper wire layer 4 6 is plated with a nickel / gold film, and the solder ball pad 5 8 and 60 are also often plated with a nickel / gold film on the surfaces of the exposed copper conductor layers 46 and 48, respectively. The pattern of the copper conductor layers 46 and 48 and the position of the circuit conduction 50 are appropriately designed to allow the bump pad 5 6 to be electrically connected to the solder ball pad 58 or the solder ball pad 60. 515057 5. Description of the invention (6) Generally speaking, the thickness of the 1C chip is between 125 and 30 0 " m, and a plurality of bonding pads 64 and bonding pads 6 are provided on the lower side of the IC chip 4 4 The position of 4 corresponds to the position of the bump pad 56 on the substrate 44. The IC chip 44 is fixed on a predetermined area 62 of the substrate 42 by a plurality of solder bumps or conductive polymer bumps 66, and the solder bumps or conductive polymer bumps 66 are provided on The IC pad 44 is electrically connected to the substrate 42 between the bonding pad 64 of the IC chip 44 and the bump pad 56 of the substrate 42. The gap distance (after bonding) between the substrate 42 and the 1C wafer 44 is about 30 to 80 / zm. At this time, an epoxy underfill process may be performed according to the needs of the flip-chip technology. A bottom sealing layer (under fi 1 1 layer) 6 8 fills the gap between the substrate 42 and the 1C chip 4 4 to protect the flip-chip BGA package 40 from the harsh environment and eliminate solder bumps 6 6 connections Where the stress. Please refer to FIG. 4, which is a schematic cross-sectional view of a flip-chip BGA package of the present invention when stacked. As shown in FIG. 4, the position of the solder ball pad 58a on the flip-chip B G A package 40a corresponds to the solder ball pad 60b on the lower side of the other flip-chip BGA package 40b. When the flip-chip BGA package 40b is stacked on the flip-chip BGA package 40a, the flip-chip BGA package 40b (the solder ball 6 8 has been planted on the solder ball pad 60b) is aligned with the flip-chip BGA below The package body 40 a is then subjected to solder re-flow to fix and electrically connect the flip-chip BG A package body 40 b.

第10頁 515057 五、發明說明(7) 利用同樣的方法,覆晶BGA封裝體40可以重複堆疊,例 如,在覆晶BGA封裝體40b上可再堆疊另一覆晶BGA封裝體 4 0 c ° 請參考圖五與圖六,圖五與圖六為圖四之覆晶BGA封 裝體40a的底視圖。一般而言,覆晶BGA封裝體40之凸塊焊 塾5 6及錫球焊塾5 8、6 0的數目與排列方式,可以依據不同 的電路需求來改變。以圖四之覆晶BGA封裝體40a底部的錫 球焊墊6 0 a為例,圖五顯示之錫球焊墊6 0 a的排列方式是較 為典型的一種陣列,圖六所顯示的排列方式則是跟據圖五 的排列方式加以變化而成。 請參考圖七與圖八,圖七為本發明覆晶BGA封裝體4〇 之第一實施例的剖面示意圖,圖八為如圖七之覆晶BGA封 裝體40d的底視圖。如圖七所示,覆晶BGA封裝體40d是固 定在一印刷電路板上(未顯示,在下方),覆晶BGA封裝體 I 40(1再依序堆疊覆晶BGA封裝體40b、40c。為了增加覆晶 BG A封裝體40 d的散熱效果,在基板42 d下方的中央部份可 另外βχ置複數個錫球焊墊7 〇,如此一來,I c晶片4 4 d所產 生的南溫可以經由錫球焊墊7 〇與相連接的錫焊球6 8傳導至 下方的印刷電路板上。圖八顯示錫球焊墊7 〇在基板4 2 d底 部的相對位置之一範例。 請參考圖九至圖十四,圖九至圖十四為本發明覆晶 515057 五、發明說明(8) BGA封裝體與附屬元件相堆疊時的剖面示意圖。覆晶BGA封 裝體4 0本身可相互堆疊之外,亦可在錫球焊墊5 8或錫球焊 塾6 0上开y成锡、4球6 8,以連接一附屬元件(a c c e s s 〇 r y component)或是其他電子元件,以滿足電路設計者不同的 需求。如圖九所示,堆疊在最上方的覆晶BGA封裝體4〇b表 面上可用來堆疊一阻抗終端匹配裝置(impedance terminator) 72。亦可如圖十所示,在覆晶bga封裝體4〇& 與4 0c之間裝設一阻抗匹配裝置(impedance matcher) 74。如圖九至圖十所示,阻抗終端匹配裝置72與阻抗匹配 裝置74皆可被製造成一 BGA基板之外型。 阻抗終端匹配裝置72與阻抗匹配裝置74是將各種電阻 器、電容器、電感器(induetor)等元件及微條導線 (strip-line)分別整合在一電路基板76與一電路基板78 内,或是利用表面黏著技術(surface m〇unt technQlQgy > 的方式,在電路基板76、78的表面裝置電阻器、電容琴、 電感器等元件。阻抗終端匹配裝置72與阻抗匹配裝置^的 阻抗值(impedance value)是依據電路的要求來設計,一 般常為28Ω或50Ω。阻抗匹配裝置74的功能包括信號時 序控制(signal timing control)、降低信號雜訊以及〜 轉之阻抗控制(fine impedance control)。 ^圖十一所示,在最上方的覆晶BGA封裝體4〇b上, 以堆疊各種不同的球格陣列(BG A )封裝體或是有特定功能 515057 五、發明說明(9) ' 的1C電路,圖十一中顯示一種大小不同的BGA封裝體8〇。 除此之外’女裝在最上方的BGA封裝體可以選擇不且堆聂 功能的習知覆晶BGA封裝體1〇,或其他習知打金線= bond) BGA封裝體或是採用其他球格陣 的封裝體,例如堆疊一種開口向下十 / 裝體(未顯示)。 〇下(cavity-down)的BGA封 如圖十二所示,覆晶BGA封裝體4〇b可連接一軟板裝置 (flex-board) 82,以連接其他外部的電路。如圖十三 ,,覆晶BGA封裝體40b還可連接一散熱裝置(heat syug) 4,來改善散熱效果。散熱裝置84可被製造成一 bga基板 ^,型(未顯示),亦可是製作成如圖十三之金屬(銅)散埶 片或其他散熱翼之外型(未顯示)。 如圖十四所示,覆晶BGA封裝體4〇b上的錫球焊墊58b =j用來連接一檢測裝置86,以方便進行電路測試。檢測 =置86包含有一測試探針頭(tester head ) 88,及複數 針(pogo pins) 9〇設在測試探針頭88下,可與錫球焊 登58b接觸形成電連接。 以上所舉出的各種附屬元件,彼此間也可以經由適當 =級合,來應用在覆晶BGA封裝體上。例如圖九中的阻抗 、’、、端匹配裝置72可以安裝在圖十的覆晶bga封裝體40c上, 圖十二的散熱裝置8 4也可以安裝在圖九的阻抗終端匹配 515057 五、發明說明(ίο) 裝置72上。此外,圖九至圖十四中的覆晶BGA封裝體40a下 方可以進一步堆疊其他覆晶BGA封裝體40與附屬元件,最 後再安裝到一印刷電路板(未顯示)上,例如一主機板 (mother board)或一附插卡(daughter card)。為 了簡化 圖示,前述覆晶BG A封裝體40a、40b、40c、40 d堆疊時的 示意圖並沒有繪出覆晶BGA封裝體40a、40b、40c、40d的 内部結構。亦即其内部結構可以是兩層板,四層板或其他 多層板之結構。 請參考圖十五,圖十五為本發明覆晶BGA封裝體之第 二實施例的剖面示意圖。圖十五所示為一四層板覆晶BGA ·| 封裝體92,其外觀與兩層覆晶BGA封裝體4〇相同,但是基 板4 2内另包含有至少一銅導線層94 (在圖十五中為兩層内 層銅導線層9 4 )。基板4 2的銅導線層4 6與4 8、内層銅導線 層94與電路導通5 0經過適當的連接,可電連接基板42的凸 塊焊墊5 6與錫球焊墊58、60。同樣的,以上所提及的兩層 板覆晶BGA封裝體40的應用,也可推廣到四層板的覆晶bgA 封裝體92或是其他多層板的覆晶BGa封裝體上。 一—請參考圖十六,圖十六為本發明覆晶BGA封裝體之第 三實施例的堆疊示意圖。如圖十六所示,本發明第三實施 例之覆晶BG A封裝體9 6主要也是由一基板9 8與一丨c晶片1 〇 〇籲 所構成’覆晶BGA封裝體96與覆晶%A封裝體40不同之處在 於晶片100是固定在基板98的下方。覆晶BGA封裝體96其餘 515057 五、發明說明(11) 的結構、或是其與其他元件連接的方式,都可以比照前述 覆晶B G A封裝體4 0加以應用組合。 BGA封裝體96的基板98與BGA封裝體40的基板42兩者結 構十分相近,兩者皆未設有一晶片固定腔,且基板9 8上下 兩側分別設有二鋼導線層1 〇 2、1 0 4,基板9 8的内部則設有 複數個電路導通(未顯示)甩來連接銅導線層1 〇 2與銅導線 層1 0 4。基板9 8的内部可另外設置至少一内層銅導線層(未 顯示),用來電連接電路導通、銅導線層1 〇 2與銅導線層 104。 銅導線層102、1〇4的表面分別覆蓋二綠漆層1〇6、 I 0 8。基板9 8上側的綠漆層1 〇 6上設有複數個錫球焊墊 II 0,而基板9 8下側的綠漆層1 0 8則設有複數個錫球焊墊 11 2與複數個凸塊焊墊11 4。凸塊焊墊π 4分佈在基板下的 一預定區域(未顯示)内,錫球焊墊n 2則分佈在該預定區 域之外。 I C晶片1 0 0的下側設有複數個接合墊(未顯示),其位 置與基板9 8上凸塊焊墊11 4的位置相對應。丨c晶片i 〇 〇利用 複數個焊料凸塊或導電聚合物凸塊i丨6來固定在基板98的 下側,並使I C晶片1 〇 〇得以電連接到基板9 8上。j c晶片工〇 與基板98之間可另外填充一底部密封層(未顯示),以填滿 I C晶片1 0 0與基板9 8之間的空隙。 、 515057 五、發明說明(12) 覆晶BGA封裝體96上側之錫球焊墊n 一覆晶BGA封裝體96下側之錫球焊塾"2,而H二二 U0與相對應之錫球焊墊112之間形成複數個錫焊J 墊 以重複堆疊覆晶BGA封裝體96。在基板98上側的中 ^外設置複數個錫球焊塾(未顯示),這些錫 塾^ =他封裝體或元件相連接,而是用來增加基板:二::Page 10 515057 V. Description of the invention (7) Using the same method, the flip-chip BGA package 40 can be stacked repeatedly, for example, another flip-chip BGA package can be stacked on the flip-chip BGA package 40b 40 ° Please refer to FIGS. 5 and 6, which are bottom views of the flip-chip BGA package 40 a of FIG. 4. Generally speaking, the number and arrangement of bump bonding pads 56 and solder ball bonding pads 5 8 and 60 of the flip chip BGA package 40 can be changed according to different circuit requirements. Taking the solder ball pad 60a at the bottom of the flip-chip BGA package 40a in FIG. 4 as an example, the arrangement of the solder ball pads 60a shown in FIG. 5 is a typical array, and the arrangement shown in FIG. It is changed according to the arrangement of Figure 5. Please refer to FIG. 7 and FIG. 8. FIG. 7 is a schematic cross-sectional view of the first embodiment of the flip-chip BGA package 40 according to the present invention. FIG. 8 is a bottom view of the flip-chip BGA package 40d as shown in FIG. As shown in FIG. 7, the flip-chip BGA package 40 d is fixed on a printed circuit board (not shown, below), and the flip-chip BGA package I 40 (1 is then sequentially stacked with the flip-chip BGA packages 40 b and 40 c. In order to increase the heat dissipation effect of the flip-chip BG A package 40 d, a plurality of solder ball pads 7 can be placed in the central part below the substrate 42 d. In this way, the IC chip 4 4 d The temperature can be conducted to the lower printed circuit board through the solder ball pad 7 〇 and the connected solder ball pad 6 8. Figure 8 shows an example of the relative position of the solder ball pad 〇 at the bottom of the substrate 4 2 d. Please Referring to Figures 9 to 14, Figures 9 to 14 are flip chip 515057 of the present invention. V. Description of the invention (8) A cross-sectional schematic diagram of a BGA package and an accessory component stacked. The flip chip BGA package 40 itself can be mutually In addition to stacking, it is also possible to open y into tin and 4 balls 6 8 on the solder ball pad 58 or solder ball 60 to connect an accessory component or other electronic components to meet Different needs of circuit designers. As shown in Figure 9, the flip-chip BGA package 40b stacked on top It can be used to stack an impedance termination device 72 on the surface. As shown in Figure 10, an impedance matcher 74 can be installed between the flip-chip bga package 40 and 4c. As shown in FIGS. 9 to 10, both the impedance termination matching device 72 and the impedance matching device 74 can be manufactured outside of a BGA substrate. The impedance termination matching device 72 and the impedance matching device 74 are various resistors, capacitors, and inductors. Components such as industrial devices and strip-lines are integrated into a circuit substrate 76 and a circuit substrate 78, respectively, or by using surface adhesion technology , 78 surface devices such as resistors, capacitors, inductors, etc. The impedance value of the impedance termination matching device 72 and the impedance matching device ^ is designed according to the requirements of the circuit, and is usually 28Ω or 50Ω. Impedance matching The functions of the device 74 include signal timing control, signal noise reduction, and fine impedance control. ^ Figure 11 It is shown that on the uppermost flip-chip BGA package 40b, various different ball grid array (BG A) packages are stacked or have specific functions 515057 V. Description of the invention (9) 1C circuit, Figure 10. One shows a different size BGA package 80. In addition, 'the top BGA package for women's clothing can choose the conventional flip-chip BGA package 10 which does not stack functions, or other conventional type (Gold wire = bond) BGA package or package using other ball grid arrays, such as stacking an opening with ten openings down / mounting (not shown). Cavity-down BGA package As shown in Figure 12, the flip-chip BGA package 40b can be connected to a flex-board 82 to connect other external circuits. As shown in FIG. 13, the flip-chip BGA package 40 b can also be connected with a heat dissipation device 4 to improve the heat dissipation effect. The heat dissipating device 84 can be manufactured as a bga substrate (not shown), or it can be made as a metal (copper) scatter sheet as shown in Figure 13 or other types of heat dissipating wings (not shown). As shown in FIG. 14, the solder ball pads 58b = j on the flip-chip BGA package 40b are used to connect a detection device 86 to facilitate circuit testing. The detection device 86 includes a tester head 88 and a plurality of pogo pins 90. The tester head 88 is provided under the test probe head 88 and can be in contact with the solder ball 58b to form an electrical connection. The various accessory components listed above can also be applied to flip-chip BGA packages through appropriate = cascading. For example, the impedance matching device 72 in FIG. 9 may be installed on the flip-chip bga package 40c in FIG. 10, and the heat dissipation device 84 in FIG. 12 may also be installed in the impedance termination matching in FIG. 515. Instructions (ίο) on device 72. In addition, the flip-chip BGA package 40a in FIGS. 9 to 14 can be further stacked with other flip-chip BGA packages 40 and auxiliary components, and finally mounted on a printed circuit board (not shown), such as a motherboard ( mother board) or a daughter card. In order to simplify the illustration, the above-mentioned schematic diagrams of the flip-chip BG A packages 40a, 40b, 40c, 40d when stacked do not show the internal structure of the flip-chip BGA packages 40a, 40b, 40c, 40d. That is, its internal structure can be a two-layer board, a four-layer board or other multi-layer boards. Please refer to FIG. 15, which is a schematic cross-sectional view of a second embodiment of a flip-chip BGA package according to the present invention. Figure 15 shows a four-layer flip-chip BGA · | package 92, which has the same appearance as the two-layer flip-chip BGA package 40, but the substrate 42 also contains at least one copper wire layer 94 (in the figure The fifteenth middle is two inner copper wire layers 9 4). The copper wire layers 46 and 48 of the substrate 42 and the inner copper wire layer 94 and the circuit conduction 50 can be electrically connected to the bump pads 56 of the substrate 42 and the solder ball pads 58 and 60 through proper connection. Similarly, the application of the two-layer flip-chip BGA package 40 mentioned above can also be extended to the flip-chip bgA package 92 of a four-layer board or the flip-chip BGa package of another multilayer board. I—Please refer to FIG. 16. FIG. 16 is a stacking diagram of a third embodiment of a flip-chip BGA package according to the present invention. As shown in FIG. 16, the flip-chip BG A package 96 according to the third embodiment of the present invention is also mainly composed of a substrate 98 and a c-chip 100. The flip-chip BGA package 96 and flip-chip The% A package 40 is different in that the wafer 100 is fixed below the substrate 98. The rest of the flip-chip BGA package 96 515057 5. The structure of the invention (11), or the way it is connected to other components, can be applied in combination with the aforementioned flip-chip B G A package 40. The structure of the substrate 98 of the BGA package 96 and the substrate 42 of the BGA package 40 are very similar, neither of which is provided with a wafer fixing cavity, and the substrate 98 is provided with two steel wire layers 1 and 2 on the upper and lower sides. 0, 4, the inside of the substrate 98 is provided with a plurality of circuit conduction (not shown) to connect the copper wire layer 10 and the copper wire layer 104. At least one inner copper wire layer (not shown) may be provided inside the substrate 98 to electrically connect the circuit, the copper wire layer 102, and the copper wire layer 104. The surfaces of the copper wire layers 102 and 104 are respectively covered with two green paint layers 106 and 108. The green paint layer 10 on the upper side of the substrate 9 8 is provided with a plurality of solder ball pads II 0, and the green paint layer 1 0 8 on the lower side of the substrate 9 8 is provided with a plurality of solder ball pads 11 2 and a plurality of solder pads. Bump pads 11 4. The bump π 4 is distributed in a predetermined area (not shown) under the substrate, and the solder ball n 2 is distributed outside the predetermined area. A plurality of bonding pads (not shown) are provided on the lower side of the IC chip 100, and the positions thereof correspond to the positions of the bump pads 114 on the substrate 98. The wafer c is fixed on the lower side of the substrate 98 by using a plurality of solder bumps or conductive polymer bumps i6, and the IC wafer 100 is electrically connected to the substrate 98. An additional bottom sealing layer (not shown) may be filled between the wafer chip worker 0 and the substrate 98 to fill the gap between the IC wafer 100 and the substrate 98. 515057 5. Description of the invention (12) The solder ball pad n on the upper side of the flip-chip BGA package 96 a solder ball pad on the lower side of the flip-chip BGA package 96 " 2, and H 22 U0 and the corresponding tin A plurality of solder J pads are formed between the ball pads 112 to repeatedly stack the flip-chip BGA package 96. A plurality of solder balls (not shown) are provided on the upper side of the substrate 98, and these solders are connected to other packages or components, but are used to increase the substrate: 2 ::

捏絲1Μ卜,晶BGA封裝體96上側的錫球焊墊1 1 0可經由姿 知球11 8,來連接一阻抗終端匹配裝置、一阻抗匹配裝 置、一軟板裝置、一散熱裝置或是其他球格陣列封t 沬顯示)。錫球焊墊110也可直接電連接一檢測裝置(未溝 =j,其包含有至少一探針或一測試探針頭,以與錫球 一 1 0相接觸。覆晶BG A封裝體9 6下側的錫球焊墊i丨2也可 ^由錫焊球118,來連接一阻抗匹配裝置或一印刷電路板 (未顯不)。印刷電路板可為一主機板或是一附插卡。 、—^發明覆晶BGA封裝體40、92、9 6的特點在於可以重 ::並可與其他附屬元件相組合。因此在高速記憶模 、q Wigh speed memory module)中,覆晶 BGA封裝體 4〇、 封裝供I 一種高封裝密度的封裝結構。由於覆晶ΜΑ 體40、92、96可以大幅減少在印刷電路板上所佔用的 面積,並縮短信號傳輸的距離。對系統設計者而言,覆晶1Mb, the solder ball pads 1 10 on the top of the crystal BGA package 96 can be connected to an impedance terminal matching device, an impedance matching device, a flexible board device, a heat sink or Other ball grid arrays are shown (t 沬). The solder ball pad 110 can also be directly electrically connected to a detection device (not groove = j, which contains at least one probe or a test probe head to contact the solder ball 10). The flip-chip BG A package 9 6 The solder ball pad i 丨 2 on the lower side can also be connected to an impedance matching device or a printed circuit board (not shown) by solder ball 118. The printed circuit board can be a motherboard or an add-in The characteristics of the invented flip-chip BGA packages 40, 92, and 96 are that they can be combined with other accessory components. Therefore, in the high-speed memory mode, q Wigh speed memory module, the flip-chip BGA Package 40. The package provides a high-density packaging structure. Because the flip-chip MA body 40, 92, 96 can greatly reduce the area occupied on the printed circuit board and shorten the distance of signal transmission. For system designers, flip chip

第16頁 515057 五、發明說明(13) B G A封裝體4 0、9 2、9 6可做為一種高速的硬體平台,而對 I C設計者而言,覆晶BG A封裝體4 0、9 2、9 6則可提供較佳 的時序限制之寬裕度(timing constraint margin), 並 可大量應用在高速記憶晶片(high speed memory chips) 或高速平行微處理器(parallel /z -processors)。 相較於習知覆晶BG A封裝體10,覆晶BG A封裝體40、 9 2、9 6具有可重複堆疊的功能,可利用很少的印刷電路板 面積,安裝多層覆晶BG A封裝體40、92、9 6或其他附屬元 件,以提高配線板層級(board level)的封裝密度 (package density)。同時在高速電路上,覆晶A封裝體 4 0、9 2、9 6是以相互對應的方式連接,因此高頻信號的同 步性(s y n c h r ο n i z a t i 〇 η)不易受到印刷電路板上電子線路 佈局(lay out)的影響,而可改善高頻信號時序上的同步 性。 以上所述僅本發明之較佳實施例,凡依本發明申請專 利範圍所做之均等變化與修飾,皆應屬本發明專利之涵苔 範圍。 叫瓜Page 16 515057 V. Description of the invention (13) BGA package 4 0, 9 2, 9 6 can be used as a high-speed hardware platform. For IC designers, flip chip BG A package 4 0, 9 2.96 can provide a better timing constraint margin, and can be widely used in high speed memory chips or parallel / z-processors. Compared with the conventional flip-chip BG A package 10, the flip-chip BG A package 40, 9 2, 9 6 has a repeatable stacking function, and can use a small printed circuit board area to install a multilayer flip-chip BG A package. The body 40, 92, 96 or other accessory components are used to increase the package density of the board level. At the same time, on high-speed circuits, the flip-chip A packages 40, 9, 2, 9 are connected in a corresponding manner, so the synchronization of high-frequency signals (synchr ο nizati 〇η) is not easily affected by the electronic circuit layout on the printed circuit board. (Lay out), and can improve the synchronization of high-frequency signal timing. The above are only the preferred embodiments of the present invention, and all equivalent changes and modifications made in accordance with the scope of the patent application for the present invention shall fall within the scope of the invention patent. Called melon

515057 圖式簡單說明 圖示之簡單說明 圖一為習知覆晶球格陣列封裝體的剖面示意圖。 圖二為本發明兩層覆晶球格陣列封裝體的示意圖(以 兩層板為例)。 圖三為圖二之覆晶球格陣列封裝體的剖面示意圖(以 兩層板為例)。 圖四為本發明之覆晶BGA封裝體相堆疊時的剖面示意 圖。 圖五與圖六為圖四之覆晶BGA封裝體的底視圖(兩種不 同範例)。 圖七為本發明覆晶BGA封裝體之第一實施例的剖面示 意圖。 圖八為如圖七之覆晶BGA封裝體的底視圖。 圖九至圖十四為本發明覆晶BGA封裝體與附屬元件相 堆疊時的剖面示意圖。 圖十五為本發明覆晶BGA封裝體之第二實施例的剖面 示意圖。 圖十六為本發明覆晶BGA封裝體之第三實施例的堆疊 示意圖。 圖示之符號說明 40、40a、40b、40c、40d 兩層板覆晶BGA封裝體515057 Brief description of the diagrams Brief description of the diagrams Figure 1 is a schematic cross-sectional view of a conventional flip chip array package. Figure 2 is a schematic diagram of a two-layer flip-chip ball grid array package according to the present invention (take two-layer board as an example). Fig. 3 is a schematic cross-sectional view of the flip-chip ball grid array package shown in Fig. 2 (taking a two-layer board as an example). FIG. 4 is a schematic cross-sectional view of a flip-chip BGA package according to the present invention when stacked. Figures 5 and 6 are bottom views of the flip-chip BGA package of Figure 4 (two different examples). FIG. 7 is a schematic cross-sectional view of a first embodiment of a flip-chip BGA package according to the present invention. FIG. 8 is a bottom view of the flip-chip BGA package as shown in FIG. 7. Figures 9 to 14 are schematic cross-sectional views of a flip-chip BGA package according to the present invention when stacked with an accessory component. FIG. 15 is a schematic cross-sectional view of a second embodiment of a flip-chip BGA package according to the present invention. FIG. 16 is a schematic stacking diagram of a third embodiment of a flip-chip BGA package according to the present invention. Explanation of symbols in the figure 40, 40a, 40b, 40c, 40d Two-layer board flip-chip BGA package

第18頁 515057 圖式簡單說明 42' 42a、 40d 4[ 44dIC 46 銅導線層 48 50 電路導通 52 54 綠漆層 56 58^ 58a、58b 60 ^ 6 0 a、6 0 b 62 預定區域 64 66 焊料凸塊 68 70 錫球焊塾 72 74 阻抗匹配裝置 76 78 電路基板 80 82 軟板裝置 84 86 檢測裝置 88 90 探針 92 94 内層銅導電層 96 98 基板 100 102 銅導線層 104 106 綠漆層 108 110 錫球焊墊 112 114 凸塊焊墊 116 基板 5 晶片 銅導線層 綠漆層 凸塊焊墊 錫球焊塾 锡球焊塾 接合墊 錫焊球 阻抗終端匹配裝置 電路基板 2 BGA基板 散熱裝置(散熱BGA基板) 測試探針頭 四層板覆晶BGA封裝體 覆晶BGA封裝體(另一實施 範例) 1C晶片 銅導線層 綠漆層 錫球焊墊 焊料凸塊或導電聚合物凸孀丨 塊 1 1 8錫焊球Page 18 515057 Brief description of the diagram 42 '42a, 40d 4 [44dIC 46 Copper wire layer 48 50 Circuit continuity 52 54 Green paint layer 56 58 ^ 58a, 58b 60 ^ 6 0 a, 6 0 b 62 Predetermined area 64 66 Solder Bump 68 70 Solder ball solder pad 72 74 Impedance matching device 76 78 Circuit board 80 82 Flexible board device 84 86 Detection device 88 90 Probe 92 94 Inner copper conductive layer 96 98 Substrate 100 102 Copper wire layer 104 106 Green paint layer 108 110 solder ball pad 112 114 bump pad 116 substrate 5 chip copper wire layer green paint layer bump pad solder ball solder pad solder ball solder pad impedance terminal matching device circuit board 2 BGA substrate heat sink ( Thermal BGA substrate) Test probe head Four-layer board flip-chip BGA package flip-chip BGA package (another example) 1C chip copper wire layer green paint layer solder ball pad solder bump or conductive polymer bump 1 1 8 solder ball

Claims (1)

515057 六、申請專利範圍 1· 一種可重複堆疊的覆晶(f 1 ip_chip)球格陣列(bal 1 grid array, BGA)封裝體(package),其包含有: 一基板(substrate),其包含有一第一表面與一第二 表面,且未設有一晶片固定腔(recessed die cavity); 複數個凸塊焊塾(solder bump pad),設於該基板之 第一表面上,並分佈於至少一預定區域之内; 複數個第一錫球焊塾(solder ball pad),設於該基 板之第一表面上,並分佈於該預定區域之外; 複數個第二錫球焊墊,設於該基板之第二表面上; 複數個電路導通(via),設於該基板内部,用來電連 接該複數個凸塊焊墊、該複數個第一錫球焊墊與該複數個 第二錫球焊墊;以及 至少一 I C晶片(d i e ),設於該基板之預定區域上,該 1 C曰曰片下側則設有複數個接合塾(匕〇 ^ d i n g p a d),該複數 f接合墊的位置與該複數個凸塊焊墊的位置相對應,且該 複數個接合塾與該相對應之凸塊焊墊之間設有複數個焊料 凸塊(solder bump)或導電聚合物凸塊(conduct ive polymer bump),用來固定該IC晶片; 一其中該封裝體之複數個第一錫球焊墊的位置係對應於 ^ 一該封裝體之複數個第二錫球焊墊,而可於該複數個第 錫球焊墊與該相對應之複數個第二錫球焊墊之間形成複 數個錫焊球,以重複堆疊該封裝體。 2 ·如申請專利範圍第1項之封裝體,其中該基板另包含515057 6. Scope of patent application 1. A repeatable stackable f 1 ip_chip bal 1 grid array (BGA) package, which includes: a substrate, which includes a substrate The first surface and a second surface are not provided with a recessed die cavity; a plurality of solder bump pads are provided on the first surface of the substrate and are distributed on at least one predetermined surface. Within the area; a plurality of first solder ball pads are provided on the first surface of the substrate and are distributed outside the predetermined area; a plurality of second solder ball pads are provided on the substrate On the second surface; a plurality of circuit vias are provided inside the substrate for electrically connecting the plurality of bump pads, the plurality of first solder ball pads and the plurality of second solder ball pads And at least one IC chip (die) is provided on a predetermined area of the substrate, and a plurality of bonding pads (dock ^ padding) are provided on the lower side of the 1 C chip, and the positions of the plurality of f bonding pads and the Corresponding positions of a plurality of bump pads And a plurality of solder bumps or conductive polymer bumps are provided between the plurality of bonding pads and the corresponding bump pads, for fixing the IC chip; Wherein, the positions of the plurality of first solder ball pads of the package body correspond to ^ one of the plurality of second solder ball pads of the package body, and the plurality of first solder ball pads may correspond to the corresponding plural numbers. A plurality of solder balls are formed between the second solder ball pads to repeatedly stack the package. 2 · The package according to item 1 of the patent application scope, wherein the substrate further comprises 第20頁 515057 六、申請專利範圍 至少一内層銅導線層設於該基板内部,該内層銅導線層與 該複數個電路導通係用來電連接該複數個第一錫球焊墊、 該複數個第二錫球焊墊與該複數個凸塊焊墊。 3 · 如申請專利範圍第1項之封裝體,其中該I C晶片與該 基板之間另設有一底部密封層(underf i 1 1 layer),並填 滿§亥I C晶片與該基板之間的空隙。 4 · 如申請專利範圍第1項之封裝體,其中該基板之第二 表面之中央部份另設有複數個第三錫球焊墊,用來增加該 基板的散熱效果。 5. 如申請專利範圍第1項之封裝體,其中該複數個第一 錫球焊墊表面上另設有複數個錫焊球,用來連接一第一附 屬元件(accessory component) ° 6 · 如申請專利範圍第5項之封裝體,其中該第一附屬元 件為一阻抗終端匹配裝置(impedance terminator)。 7. 如申請專利範圍第5項之封裝體,其中該第一附屬元 件為一阻抗匹配裝置(impedance matcher)。 8 · 如申請專利範圍第5項之封裝體,其中該第一附屬元 件為一軟板裝置(flex-board)。Page 20 515057 6. Application scope At least one inner copper wire layer is provided inside the substrate, and the inner copper wire layer and the plurality of circuit continuities are used to electrically connect the plurality of first solder ball pads, the plurality of first Two solder ball pads and the plurality of bump pads. 3 · If the package of the first scope of the patent application, there is an underf i 1 1 layer between the IC chip and the substrate, and fill the gap between the IC chip and the substrate . 4 · For the package of item 1 in the scope of patent application, the central part of the second surface of the substrate is additionally provided with a plurality of third solder ball pads to increase the heat dissipation effect of the substrate. 5. For example, the package of the first scope of the patent application, wherein the surfaces of the plurality of first solder ball pads are further provided with a plurality of solder balls for connecting a first accessory component ° 6 · Such as The package of claim 5 in which the first accessory element is an impedance terminator. 7. The package of claim 5 in which the first accessory element is an impedance matcher. 8 · For the package according to item 5 of the patent application, wherein the first accessory component is a flex-board. 第21頁 M5057 六、申請專利範圍 “====封裝趙’其中該第-附屬元 以項之封裝趙’其中該第-附屬元 該複數個第 11 ·、如申請專利範圍第1項之封裝體,其中 錫球悍墊可連接一檢測裝置。 1 2 ·、如申凊專利範圍第!項之封裝體,其中該複數個第二 錫球焊塾表面上另設有複數個錫焊球,用來連接一第二附 屬元件或一印刷電路板(print circuit b〇ard,pcB)。 13·如申請專利範圍第12項之封裝體,其中該第二附屬元 件為一阻抗匹配裝置(impedance matcher)。 1 4 ·如申清專利範圍第1 2項之封裝體,其中該印刷電路板 為一主機板(mother board)。 15.如申請專利範圍第12項之封裝體,其中該印刷電路板 為一附插卡(daughter card)。 16·如申請專利範圍第1項之封骏體,其中該第一表面為M5057 on page 21 6. The scope of patent application "==== Encapsulation Zhao 'in which the-subordinate element is encapsulation Zhao' in which the-subordinate element is a plurality of eleventh. Package, in which the solder ball pad can be connected to a detection device. 1 2 · The package of item No.! In the scope of patent application, wherein a plurality of solder balls are provided on the surface of the plurality of second solder balls. , Used to connect a second accessory component or a printed circuit board (pcB). 13. The package according to item 12 of the patent application, wherein the second accessory component is an impedance matching device (impedance matcher). 1 4 · If the package of item 12 of the patent scope is claimed, wherein the printed circuit board is a mother board. 15. If the package of item 12 of the patent scope is applied, the printed circuit The board is a daughter card. 16. If the seal body of item 1 of the patent application scope, wherein the first surface is 515057 六、申請專利範圍 該基板上側之表面,該第二表面為該基板下側之表面。 1 7.如申請專利範圍第1項之封裝體,其中該第一表面為 該基板下側之表面,該第二表面為該基板上側之表面。515057 6. Scope of patent application The surface on the upper side of the substrate, and the second surface is the surface on the lower side of the substrate. 1 7. The package of claim 1, wherein the first surface is a surface on a lower side of the substrate, and the second surface is a surface on an upper side of the substrate.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598254A (en) * 2018-04-19 2018-09-28 嘉盛半导体(苏州)有限公司 Filter package method and encapsulating structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598254A (en) * 2018-04-19 2018-09-28 嘉盛半导体(苏州)有限公司 Filter package method and encapsulating structure

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