JPH0823047A - Bga type semiconductor device - Google Patents

Abstract

PURPOSE:To obtain the title semiconductor device which is corresponded with a multipin formation and high speed operation of LSI chip by a method wherein a wiring pad, formed on one surface of a substrate, and a ball pad, formed on the other surface of the substrate, are electrically connected. CONSTITUTION:A through hole 12 is perforated in a substrate 11, a wiring pad 14 and a wiring pattern, extended from the wiring pads 14, are formed on one side of the substrate 11, and ball pads 16 are formed on the other side of the substrate 11. Also, ring-like bumps 20 are formed on the ball pads 16, and the wiring pads 14, formed on one side of the substrate 11, and the ball pads 16, formed on the other side of the substrate 11, are electrically connected with each other by filling conductive resin 18 in the through hole perforated on the substrate 11. As above-mentioned, multipin formation and high-speed operation of an LSI chip can be accomplished.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a BGA (ball grid array) type semiconductor device, and more particularly to an LSI chip or a VLSI chip incorporated in a computer or electronic equipment widely used for industrial or consumer use. The present invention relates to an applied BGA type semiconductor device.

[0002]

2. Description of the Related Art As LSI chips are highly integrated,
The package mounting this LSI chip has a large number of pins, and the speed of signals transmitted is increasing. Conventionally, QFP and PGA type packages have been widely used as packages for such multi-terminal LSI chips.

However, the lead frame used in the above-mentioned QFP has a pin pitch of at least 0.3 m.
There is a limit to the miniaturization up to m, and therefore considering the practical external size of the QFP, it is considered that the upper limit is about 300 to 400 pins. Therefore, in the near future, studies should be started for packages of about 400 to 700 pins, but as mentioned above, it is difficult for QFP to deal with this. Also, LS
Since the processing speed of the I chip is increasing year by year, it is required that the signal waveform transmitted through the lead portion of the package is not distorted. However, as the QFP becomes multi-pin, Since the length from the electrode pad of the LSI chip to the external connection terminal of the package becomes long, there is a problem that the transmission characteristic of the signal waveform deteriorates as the speed increases.

On the other hand, the PGA type package has been studied mainly for a package incorporated in a large computer. This PGA type package has many structural common points with the BGA type package, but the most different point from the BGA type package is that the external connection terminals of the BGA type package are solder balls and the like, whereas the PGA type package is The external connection terminal of is that it is a pin. Further, in order to mount this PGA type package on a printed circuit board or the like, the PGA package is usually placed in a socket prepared on the printed circuit board side.
The pins of the die package are inserted to make electrical connection. Therefore, the socket for mounting the PGA package has a very fine structure, and the pin pitch of the PGA package is determined from the manufacturing limit of the socket. QFP
As with the above, there was a problem that the pin pitch was limited.

[0005]

SUMMARY OF THE INVENTION The object of the present invention is to solve various problems based on the above-mentioned prior art, and to cope with the increase in the number of pins, particularly in the range of 300 to 700 pins, and to achieve LSI. It is an object of the present invention to provide a BGA type semiconductor device that can handle high-speed chip operation.

[0006]

In order to achieve the above object, a BGA type semiconductor device according to the first aspect of the present invention comprises an insulating substrate having a plurality of through holes formed in an array, and A conductive resin filled inside a through hole formed in a substrate, a wiring pad formed on the outer peripheral portion of the through hole on one side of the substrate, a wiring pattern extending from the wiring pad, and A ball pad formed on the outer peripheral portion of the through hole on the other surface of the substrate, and a ring-shaped bump formed on the ball pad or a ball-shaped bump formed on the ball pad including the through hole. The present invention provides a BGA type semiconductor device characterized by the above.

In the BGA type semiconductor device according to the second aspect of the present invention, a substrate having an insulating property in which a plurality of through holes are opened in an array, and a wall surface of the through holes formed in the substrate are formed. Plating, the wiring pad formed on the outer peripheral portion of the through hole on one side of the substrate, the wiring pattern extending from the wiring pad, and the outer peripheral portion of the through hole on the other surface side of the substrate. Ball pad and a ring-shaped bump formed on this ball pad,
Alternatively, a ball-shaped bump formed on a ball pad including the through hole is provided.
An A-type semiconductor device is provided.

In the BGA type semiconductor device according to the third aspect of the present invention, a substrate having an insulating property in which a plurality of through holes are opened in an array form and a wall surface of the through holes formed in the substrate are formed. Plating, the conductive resin filled in the through hole formed with the plating, the wiring pad formed on the outer peripheral portion of the through hole on one side of the substrate, and extending from the wiring pad A wiring pattern, a ball pad formed on the outer peripheral portion of the through hole on the other side of the substrate, a ring-shaped bump formed on the ball pad, or a ball formed on the ball pad including the through hole. And a bump-shaped bump.

Further, in the BGA type semiconductor device according to the fourth aspect of the present invention, a plurality of through holes are formed in an insulating substrate in an array, and an insulating substrate is formed on the wall surface of the through holes. Plating, a conductive resin filled inside the through hole formed with this plating, a wiring pad formed immediately above the through hole filled with the conductive resin on one side of the substrate, and A wiring pattern extending from the wiring pad, a ball pad formed immediately below a through hole filled with a conductive resin on the other surface of the substrate, and a ball-shaped bump formed on the ball pad. The present invention provides a BGA type semiconductor device characterized by the above.

[0010]

The BGA type semiconductor device of the present invention is an LSI
As an external connection terminal of a package on which a chip is mounted, that is, a connection terminal with a printed circuit board or an MCM (multi-chip module) board, a BGA (ball grid,
Array) is applied, and on one surface of the substrate, only a wiring pad is formed immediately above the through hole opened in the substrate, and only a wiring pattern for connecting the wiring pad and the electrode pad of the LSI chip is formed. On the other surface of the substrate, a ball pad and a bump to be an external connection terminal are formed on the ball pad immediately below the through hole opened in the substrate, and through the through hole opened in the substrate, A wiring pad formed on one surface of the substrate and a ball pad formed on the other surface of the substrate are electrically connected to each other.

In the BGA type semiconductor device according to the first aspect of the present invention, the wiring pad formed on one surface of the substrate and the ball pad formed on the other surface of the substrate are electrically connected to each other. Further, the through hole is filled with a conductive resin, for example, a copper paste mixed with copper powder. Similarly, in the BGA type semiconductor device according to the second aspect of the present invention, the wall surface of the through hole is plated, and the third aspect of the present invention is provided.
In the BGA type semiconductor device of the fourth aspect, the wall surface of the through hole is plated, and the plated through hole is filled with a conductive resin. Further, in the BGA type semiconductor device of the fourth aspect of the present invention, when the wiring pad and the ball pad described above are formed, the conductive resin filled in the through hole is plated to flatten the wiring pad and the ball pad. It is an improved version.

Therefore, since the through holes are formed in a grid pattern on the substrate, the ball pads are formed immediately below the through holes, and the bumps serving as the external connection terminals are formed on the ball pads. It can be minimized and the size of the substrate can be minimized. Also, only a wiring pattern for connecting the electrodes of the LSI chip and the wiring pad formed directly above the through hole is formed on one surface of the substrate, and a ball pad is formed immediately below the through hole on the other surface of the substrate. Since the bumps are formed on the ball pads, the degree of freedom in designing the wiring pattern is high, and the distance from the electrode pads of the LSI chip to the bumps can be minimized. The signal transmission characteristics can be improved, and the deterioration of the signal transmission characteristics due to noise can be prevented.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The BGA type semiconductor device of the present invention will be described in detail below with reference to the preferred embodiments shown in the accompanying drawings.

FIG. 1A shows a BGA according to the first embodiment of the present invention.
FIG. 3 is a partial cross-sectional view of an example of a semiconductor device. In the BGA type semiconductor device 10 shown in the same figure, a through hole 12 is opened in a substrate 11, a wiring pad 14 is formed on one side of the substrate 11, and a wiring pattern extending from the wiring pad 14 (not shown). ) Is formed, and similarly, a ball pad 16 is formed on the other surface side of the substrate 11.
Further, the ring-shaped bumps 20 are provided on the ball pad 16.
Wiring pads 14 formed on one side of the substrate 11 and the ball pad 1 formed on the other side of the substrate 11.
6 is electrically connected to each other by filling the through hole 12 formed in the substrate 11 with the conductive resin 18.

FIG. 1B is a partial sectional view of another embodiment of the BGA type semiconductor device of the first aspect of the present invention.
The BGA type semiconductor device 22 shown in the figure is different from the BGA type semiconductor device 10 shown in FIG. 1A only in that the ball-shaped bumps 24 are formed instead of the ring-shaped bumps 20. The same symbols are attached to the components,
The description is omitted. That is, in the BGA type semiconductor device 22 shown in FIG. 1B, the ball-shaped bump 24 is formed on the ball pad 16 including the through hole 12 filled with the conductive resin 18.

Here, the substrate 11 is not particularly limited as long as it has an insulating property. For example, a polyimide film or a glass epoxy film formed in a tape shape is used, and the above-mentioned holes, pattern formation and It is preferable that bump formation can be performed continuously. Although not shown in FIG. 1A, the through holes 12 formed in the substrate 11 are in accordance with the required minimum number, for example, the number of electrode pads (the number of terminals) of the LSI chip to be mounted. The quantity is set at a predetermined position on the substrate 11, for example, in a grid pattern,
It is preferable to open holes by punching, dissolving with hydrazine alkali, ablation with excimer laser or the like. The conductive resin 18 may be any resin as long as it has conductivity, but for example, it is preferable that the conductive resin 18 be a copper paste mixed with copper powder. The ring-shaped bumps 20 or the ball-shaped bumps 24 formed on the ball pad 16 are preferably formed by a solder paste printing method or a ball transfer method.

The wiring pad 14 is formed in a ring shape on the outer peripheral portion of the through hole 12 on one side of the substrate 11.
The wiring pattern is extended from this wiring pad 14 to LS.
It is to be electrically connected to the I electrode pad or the like. Similarly, the ball pad 16 is formed in a ring shape on the outer peripheral portion of the through hole 12 on the other surface side of the substrate 11. That is,
Only a wiring pattern for electrical connection with an LSI chip is formed on one side of the substrate 11, and a bump serving as an external connection terminal is formed immediately below the through hole 12 on the other side of the substrate 11. Therefore, on one side of the substrate 11, the LSI
The wiring pattern can be designed so that the distance from the chip electrode to the wiring pad 14 is minimized. On the other surface side of the substrate 11, the ball pad 16 has the through hole 1
Since it is formed immediately below 2, the distance from the wiring pad 14 to the bump is shortest, and the size of the substrate 11 can be minimized. The wiring pad 14, the wiring pattern and the ball pad 16 are, for example, a copper foil attached to the surface of the substrate 11 via an adhesive such as an epoxy type or a polyimide type, or vapor-deposited on the surface of the substrate 11. It is preferable that the copper foil is directly formed by sputtering, plating or the like, or that the polyimide is directly varnish-coated and attached on the copper foil to form a pattern on the copper foil.

Next, one embodiment of the method for forming the BGA type semiconductor device according to the first aspect of the present invention described above will be described with reference to the flow chart shown in FIG. 5, but the BGA type semiconductor device of the present invention is described below. The formation method is not limited, and any formation method may be used. First, as shown in FIG.
Copper foils 13 are attached to both surfaces of the insulating substrate 11. Next, as shown in FIG. 5 (b), copper foil 1
Through holes 12 are opened in the substrate 11 to which 3 is attached. Subsequently, as shown in FIG. 5C, the conductive resin 18 is filled in the through holes 12 that have been opened. Subsequently, as shown in FIG. 5D, the copper foils 13 attached to both surfaces of the substrate 11 are etched to form a ring-shaped wiring pad 1 on the outer peripheral portion of the through hole 12 on one surface side of the substrate 11.
4 and a wiring pattern extending from the wiring pad 14 are formed, and at the same time, the through hole 12 on the other surface side of the substrate 11 is formed.
A ring-shaped ball pad 16 is formed on the outer peripheral portion of. Then, as shown in FIG. 5E, the ring-shaped bumps 20 are formed on the ring-shaped ball pad 16, or as shown in FIG. 5F, the through holes filled with the conductive resin 18 are formed. The ball-shaped bumps 24 are formed on the ball pads 16 including 12.

Next, FIG. 2A is a partial sectional view of an embodiment of the BGA type semiconductor device of the second aspect of the present invention. Compared to the BGA type semiconductor device 10 shown in FIG. 1A, the BGA type semiconductor device 26 shown in the figure has wiring pads 14 formed on one side of the substrate 11 and another side formed on the other side of the substrate 11. Instead of filling the through holes 12 formed in the substrate 11 with the conductive resin 18 and electrically connecting them to each other, the wiring pads 14 and the ball pads 16 are connected to each other. By plating 28 on the wall surface of the through hole 12 that is opened, the two are electrically connected to each other. 2B is a partial cross-sectional view of another embodiment of the BGA type semiconductor device of the second aspect of the present invention. The BGA type semiconductor device 30 shown in FIG.
Compared with the BGA type semiconductor device 26 shown in FIG.
Instead of forming the ring-shaped bumps 20 on the ball pads 16 except the through-holes 12 having the wall surfaces plated, the ball-shaped bumps 24 are formed on the ball pads 16 including the through-holes 12 having the wall surfaces plated. .

Next, one embodiment of the method for forming the BGA type semiconductor device according to the second aspect of the present invention described above will be described with reference to the flow chart shown in FIG. First, as shown in FIG. 6A, copper foils 13 are attached to both surfaces of the insulating substrate 11. Next, as shown in FIG. 6B, the through hole 1 is formed in the substrate 11 having the copper foils 13 attached to both surfaces thereof.
Open 2 Subsequently, as shown in FIG. 6C, plating 28 is applied to the wall surface of the opened through hole 12. Subsequently, as shown in FIG. 6D, the copper foils 13 attached to both surfaces of the substrate 11 are etched to form a ring-shaped wiring pad 1 on the outer peripheral portion of the through hole 12 on one side of the substrate 11.
4 and a wiring pattern extending from the wiring pad 14 are formed, and at the same time, the through hole 12 on the other surface side of the substrate 11 is formed.
A ring-shaped ball pad 16 is formed on the outer peripheral portion of. Then, as shown in FIG. 6E, a ring-shaped bump 20 is formed on the ring-shaped ball pad 16, or as shown in FIG. 6F, a through hole filled with a conductive resin 18 is formed. The ball-shaped bumps 24 are formed on the ball pads 16 including 12.

Next, FIG. 3A is a partial sectional view of an embodiment of the BGA type semiconductor device of the third aspect of the present invention. As compared with the BGA type semiconductor device 26 shown in FIG. 2A, the BGA type semiconductor device 32 shown in FIG. 2 has wiring pads 14 formed on one side of the substrate 11 and another side formed on the other side of the substrate 11. Instead of electrically connecting the formed ball pad 16 to the wall surface of the through hole 12 formed in the substrate 11 by plating 28, the wiring pad 14 and the ball pad 16 are provided on the substrate 11. Plating 28 is applied to the wall surface of the opened through hole 12, and this plating 2
Conductive resin 18 inside the through hole 12
Are electrically connected to each other by filling. Further, FIG. 3B shows a BGA according to the third aspect of the present invention.
FIG. 6 is a partial cross-sectional view of another example of the semiconductor device. The BGA type semiconductor device 34 shown in the figure is a BG shown in FIG.
Compared to the A-type semiconductor device 32, the wall surface is plated, and instead of forming the ring-shaped bump 20 on the ball pad 16 excluding the through hole 12 filled with the conductive resin 18, the wall surface is plated, The ball-shaped bumps 24 are formed on the ball pad 16 including the through holes 12 filled with the conductive resin 18.

Next, an embodiment of the method for forming the BGA type semiconductor device according to the third aspect of the present invention described above will be described with reference to the flow chart shown in FIG. First, as shown in FIG. 7A, copper foils 13 are attached to both surfaces of the insulating substrate 11. Next, as shown in FIG. 7B, the through hole 1 is formed in the substrate 11 having the copper foils 13 attached to both surfaces thereof.
Open 2 Subsequently, as shown in FIG. 7C, the wall surface of the opened through hole 12 is plated. Subsequently, as shown in FIG. 7D, the conductive resin 18 is filled in the through hole 12 having the wall surface plated 28. Subsequently, as shown in FIG. 7E, the copper foils 13 attached to both surfaces of the substrate 11 are etched to form the substrate 11
A ring-shaped wiring pad 14 and a wiring pattern extending from the wiring pad 14 are formed on the outer peripheral portion of the through hole 12 on one surface of the substrate 11, and at the same time, a ring is formed on the outer peripheral portion of the through hole 12 on the other surface of the substrate 11. The ball-shaped ball pad 16 is formed. Then, the ring-shaped bumps 20 are formed on the ring-shaped ball pad 16 as shown in FIG. 7F, or the wall surface is plated as shown in FIG. Through hole 1 filled with 18
The ball-shaped bumps 24 are formed on the ball pads 16 including 2.

Next, FIG. 4 shows a BGA according to a fourth aspect of the present invention.
FIG. 3 is a partial cross-sectional view of an example of a semiconductor device. The BGA type semiconductor device 36 shown in the figure is the BGA type shown in FIG.
In comparison with the type semiconductor device 32, in the conductive resin 18 filled in the through holes 12, the surface of the conductive resin 18 exposed from the openings of the through holes 12 on both surfaces of the substrate 11 is plated 38 in advance. First, the wiring pad 14 and the wiring pattern are formed from the copper foil formed on one surface of the substrate 11, and the ball pad 16 is formed from the copper foil formed on the other surface of the substrate 11. Therefore, the BG of this embodiment
In the A-type semiconductor device 36, the wiring pad 14 can be formed flat just above the through hole 12 on one side of the substrate 11, and the ball pad 16 can be formed flat just below the through hole 12 on the other side of the substrate 11. The shape and size of the ball-shaped bump 24 formed on the pad 16 can be made accurate. In this aspect, the ball pad 16
Are formed in a flat and circular shape, the ball-shaped bumps 24 are inevitably formed on the ball pad 16 instead of the ring-shaped bumps 20.

Next, one embodiment of the method for forming the BGA type semiconductor device of the above-mentioned fourth aspect of the present invention will be described with reference to the flow chart shown in FIG. First, as shown in FIG. 8A, copper foils 13 are attached to both surfaces of the insulating substrate 11. Next, as shown in FIG. 8B, the through hole 1 is formed in the substrate 11 having the copper foils 13 attached to both surfaces thereof.
Open 2 Subsequently, as shown in FIG. 8C, plating 28 is applied to the wall surface of the opened through hole 12. Subsequently, as shown in FIG. 8D, the conductive resin 18 is filled in the through holes 12 having the wall surfaces plated 28. Subsequently, as shown in FIG. 8E, the conductive resin 1 exposed from the openings of the through holes 12 on both surfaces of the substrate 11.
Plating 38 is applied to the surface of No. 8. Subsequently, as shown in FIG. 8F, the copper foils 13 attached to both sides of the substrate 11 are etched to form the through holes 12 on one side of the substrate 11.
A circular wiring pad 14 directly above the wiring pad 14
A wiring pattern extending from the substrate 11 is formed at the same time.
A circular ball pad 16 is formed immediately below the through hole 12 on the other surface side. Then, as shown in FIG.
The ball-shaped bumps 24 are formed on the circular ball pad 16 formed flat.

Next, the BGA type semiconductor device of the present invention will be described more concretely by showing more concrete examples.

9 (a) and 9 (b) show the BG of the present invention.
FIG. 3 is a partial plan view of an example of an A-type semiconductor device and a cross-sectional view thereof. The BGA type semiconductor device 40 shown in FIGS. 1A and 1B has a wiring pattern 42 designed to minimize the distance from the electrode pad of the LSI chip to the wiring pad 14 formed immediately above the through hole 12. It is a specific example of the semiconductor package which it has. As shown in FIG. 9A, from the electrode pad of the LSI chip to the through hole 12
In order to design the shortest distance to the wiring pad 14 formed immediately above, the number of through holes 12 formed in the substrate 11 is limited to the necessary minimum number, preferably the number of electrode pads of the LSI chip. To do. The positions of the through holes 12 formed in the substrate 11 are preferably arranged at predetermined positions, for example, in a grid pattern.

Further, it is preferable that the wiring pattern 42 is not formed on the surface of the substrate 11 on which the bumps are formed. As shown in FIG. 9B, the position where the ball pads 16 are formed is the bumps. The position to form is through hole 1
It is preferable to be directly under 2. This is because if the center positions of the through holes 12 and the ball pads 16 are displaced, it becomes difficult to arrange the bumps, which leads to an increase in the pitch of the bumps. In other words, through hole 1
2 that the center positions of the ball pad 16 and the ball pad 16 are displaced from each other means that the wiring pattern 4 is formed on the surface of the substrate 11 on which the bumps are formed.
In order to form the wiring pattern 42, the area for forming the wiring pattern 42 is required, the formation area of the ball pad 16 for forming the bump is limited, and the limitation for securing the number of pins is eventually imposed. Because you will be born.

Next, FIG. 10 is a sectional view of an embodiment in which the BGA type semiconductor device of the present invention is applied to the MCM substrate 44. As shown in the figure, if the BGA type semiconductor device of the present invention is applied to the semiconductor package 43 mounting the LSI chip and the MCM board 44 mounting the semiconductor package 43, the size of the entire system can be reduced. Further, the distance from the electrode pad of the LSI chip to the external connection terminal can be minimized, and the signal transmission characteristics can be optimized.

[0029]

As described in detail above, the BG of the present invention
The A-type semiconductor device uses BGA as an external connection terminal of a package on which an LSI chip is mounted. On one surface of a substrate, a wiring pad is provided directly above a through hole formed in the substrate, and this wiring pad Only a wiring pattern for connecting to the electrode pads of the LSI chip is formed, and on the other surface of the substrate, a ball pad is provided directly below the through hole opened in the substrate, and a bump serving as an external connection terminal is provided on this ball pad. Through the through hole that is formed and opened in the substrate,
A wiring pad formed on one surface of the substrate and a ball pad formed on the other surface of the substrate are electrically connected to each other.

Therefore, according to the BGA type semiconductor device of the present invention, through holes are formed in a grid pattern in the substrate, ball pads are formed immediately below the through holes, and external connection terminals are formed on the ball pads. Since it will form bumps,
The bump pitch can be minimized and the substrate size can be minimized. Further, according to the BGA type semiconductor device of the present invention, only the wiring pattern for connecting the electrode of the LSI chip and the wiring pad formed immediately above the through hole is formed on one surface of the substrate and the other surface of the substrate is formed. Since a ball pad is formed directly under the through hole and a bump is formed on this ball pad, there is a high degree of freedom in wiring pattern design and the distance from the electrode pad of the LSI chip to the bump should be minimized. Because you can
It is possible to improve the signal transmission characteristics associated with the high speed operation of the I-chip, and prevent the deterioration of the signal transmission characteristics due to noise.

[Brief description of drawings]

1 (a) and (b) are respectively the first of the present invention.
FIG. 3 is a partial cross-sectional view of one embodiment of the BGA type semiconductor device of the aspect, and a partial cross-sectional view of another embodiment.

2 (a) and (b) are respectively the second aspect of the present invention.
FIG. 3 is a partial cross-sectional view of one embodiment of the BGA type semiconductor device of the aspect, and a partial cross-sectional view of another embodiment.

3 (a) and (b) are respectively the third of the present invention.
FIG. 3 is a partial cross-sectional view of one embodiment of the BGA type semiconductor device of the aspect, and a partial cross-sectional view of another embodiment.

FIG. 4 is a partial cross-sectional view of an example of a BGA type semiconductor device according to a fourth aspect of the present invention.

FIG. 5 is a flowchart of an example of a method for forming a BGA type semiconductor device according to the first aspect of the present invention.

FIG. 6 is a flowchart of an example of a method for forming a BGA type semiconductor device according to the first aspect of the present invention.

FIG. 7 is a flowchart of an example of a method for forming a BGA type semiconductor device according to the first aspect of the present invention.

FIG. 8 is a flowchart of an example of a method for forming a BGA type semiconductor device according to the first aspect of the present invention.

9A and 9B are BGs of the present invention, respectively.
FIG. 3 is a partial plan view of an embodiment in which an A-type semiconductor device is applied to a semiconductor package, and a sectional view thereof.

FIG. 10 is a sectional view of an example in which the BGA type semiconductor device of the present invention is applied to an MCM substrate.

[Explanation of symbols]

10, 22, 26, 30, 32, 34, 36, 40 B
GA type semiconductor device 11 substrate 12 through hole 14 wiring pad 16 ball pad 18 conductive resin 20 ring bump 24 ball bump 28, 38 plating 42 wiring pattern 43 semiconductor package 44 MCM substrate

Claims (4)

[Claims] 1. A substrate having an insulating property in which a plurality of through holes are opened in an array, a conductive resin filled in the through holes formed in the substrate, and one side surface of the substrate. A wiring pad formed on the outer peripheral portion of the through hole, a wiring pattern extending from the wiring pad, a ball pad formed on the outer peripheral portion of the through hole on the other surface side of the substrate, and a ball pad formed on the ball pad BGA type semiconductor device comprising: a ring-shaped bump formed on the ball pad; or a ball-shaped bump formed on a ball pad including the through hole. 2. A substrate having an insulating property in which a plurality of through holes are opened in an array, a plating formed on a wall surface of the through holes formed in the substrate, and a through hole on one side of the substrate. A wiring pad formed on the outer peripheral portion of the substrate, a wiring pattern extending from the wiring pad, a ball pad formed on the outer peripheral portion of the through hole on the other surface of the substrate, and a ball pad formed on the ball pad A BGA type semiconductor device comprising a ring-shaped bump or a ball-shaped bump formed on a ball pad including the through hole. 3. A substrate having an insulating property in which a plurality of through holes are opened in an array, a plating formed on a wall surface of the through holes formed in the substrate, and a through hole formed with the plating. Conductive resin filled inside,
A wiring pad formed on the outer peripheral portion of the through hole on one side of the substrate, a wiring pattern extending from the wiring pad, and a ball pad formed on the outer peripheral portion of the through hole on the other side of the substrate, A BGA type semiconductor device comprising a ring-shaped bump formed on the ball pad or a ball-shaped bump formed on the ball pad including the through hole. 4. An insulating substrate having a plurality of through holes formed in an array, a plating formed on a wall surface of the through holes formed in the substrate, and a through hole formed with the plating. Conductive resin filled inside,
A wiring pad formed directly above a through hole filled with a conductive resin on one side of the substrate, a wiring pattern extending from the wiring pad, and a conductive resin on the other side of the substrate were filled. A BGA type semiconductor device comprising a ball pad formed immediately below a through hole and a ball-shaped bump formed on the ball pad.