CN1095283C - 用于具有低相位噪声的数字高级电视信号的振荡器 - Google Patents

用于具有低相位噪声的数字高级电视信号的振荡器 Download PDF

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CN1095283C
CN1095283C CN98100731A CN98100731A CN1095283C CN 1095283 C CN1095283 C CN 1095283C CN 98100731 A CN98100731 A CN 98100731A CN 98100731 A CN98100731 A CN 98100731A CN 1095283 C CN1095283 C CN 1095283C
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sensing element
oscillator
paper tinsel
phase noise
transistor
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CN1202070A (zh
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皮埃尔·多布罗沃尔尼
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LG Electronics Inc
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0088Reduction of noise
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02Varying the frequency of the oscillations by electronic means
    • H03B2201/0208Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/04Reduction of undesired oscillations originated from outside noise or interferences, e.g. from parasitic couplings with circuit elements outside the oscillator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/08Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator
    • H03B2202/082Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements
    • H03B2202/084Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator by avoiding coupling between these circuit elements through shielding

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

本发明涉及可在千兆赫兹频率范围内工作的振荡器,包括具有与振荡回路和附加反馈路径耦合的具有发射极的晶体管,附加反馈路径将振荡回路耦合回晶体管的基极。振荡回路的感应元件以与提供附加反馈路径的传输线同样的方式,以印刷箔图形形式提供。这种设置改善了振荡器的相位噪音特征,同时扩展了其工作频率范围。

Description

用于具有低相位噪声的数字高级 电视信号的振荡器
本发明涉及可工作在千兆赫兹频率范围的高频振荡器,特别涉及这样的振荡器用于数字ATV(高级电视)信号方面。
当处理数字ATV信号时,由调谐器振荡器引入的相位噪声是严重的。特别是当该振荡器工作在1或2千兆赫兹或更高频率下时,它常常是机械不稳定的,即它对由于机械刺激所致的颤声或铃声十分敏感。本发明的振荡器使用了来自振荡回路的一个附加的反馈以改善振荡器的相位噪声(其也可以扩展其工作频率),并使用印刷箔感应元件(传输线)以改进其机械稳定性。
本发明的主要目的是提供一种新颖的高频振荡器。
本发明的另一目的是提供一种用于数字ATV信号的高频振荡器。
本发明的再一目的是提供一种可工作在千兆赫兹频率范围内并且是稳定的、廉价且展示低相位噪声的振荡器。
为了实现上述目的,本发明提供了一种可在千兆赫频率范围内工作的振荡器,包括:具有基极和发射极的振荡器晶体管;包括与所述晶体管的所述发射极耦合的第一感应元件的可调振荡回路;包括与所述可调谐振荡回路中所述第一感应元件耦合以在所述可调振荡回路的电流回路中产生电压的第二感应元件的耦合传输线;将所述第二感应元件与所述第一感应元件以负互耦合系数关系设置的装置;绝缘基底;包含所述绝缘基底上经一箔图形的所述第一感应元件;包含与所述第一箔图形并置的所述绝缘基底相应侧上第二箔图形的所述第二感应元件;以及以正反馈方式将所述电压施加到所述晶体管的所述基极上,以扩展所述振荡器晶体管频率响应特征的装置。
本发明的上述目的和其它目的通过参照以下对附图的说明及附图可以变得明显。
图1是本发明的振荡器示意图;
图2和3是本发明的印刷电路板振荡器相对两侧的图。
参见图1,一个NPN振荡器晶体管Q1的集电极经一电阻R6连接到DC工作电压源上。Vcc由电容器C10旁路接地。作为振荡器反馈电路一部分的电容器C3连接到晶体管的基板和发射极,发射极经并联的电阻R7和电容器C4接到振荡回路上。该振荡回路包括一对初级感应元件L2A和L2B,其与一对相互并联的变抗器二极管D1和D2连接。变抗器二极管的连接点经串联的电阻R2和感应元件L1接到调谐电压上。振荡器晶体管Q1的输出经其集电极提供到串联的DC去耦合电容器C2和一对电阻R8和R9上,其与电阻R6一起形成一个ACPI型衰减器以改善振荡器的上拉特性。振荡器的输出经电容器C5从电阻R8和R9的连接点输出。
附加的反馈电路设置在振荡回路和晶体管Q1的基极之间(除此之外由晶体管Q1的本征电容和电容C1提供)。Vcc和地之间串联着的三个电阻R3、R4和R1所形成的DC分压器为Q1的基极提供偏置。电容C1与电阻R1并联,其一端接地以减少Vcc引起的任何噪声。与L2A耦合的感应元件L3A连接到R1和C1的结点,电阻R5(大约10欧姆)将L3的另一端接到振荡器Q1的基极从而闭合附加的反馈路径。
根据本发明,感应元件L2A、L2B和L3被耦合,印制的传输线包括制成在绝缘基底上的箔图形,例如印刷电路板。进一步说,感应元件L3被定位以与振荡回路的感应元件L2A具有互耦合,其连接方式使得在振荡回路和感应元件L3之间可以获得负的互耦合系数。图2和3说明了印刷电路板上振荡器的实际布局。
图2和3所示的印刷电路板有一个顶面10a和一个底面10b,顶面上有一个箔图形,其包括两个相对较长的互连条12和14(只能承载DC)和多个连线及互连焊盘或台,如焊盘16,18,20和22。多个镀制的通孔30分布在电路板上,用于使顶面10a的元件与底面上的元件或地相连接,这是众所周知的。晶体管、变抗器二极管及多个电阻、电容和感应元件如图所示连接在箔图形上。特别值得注意的是感应元件由电路板上的传导箔形成。通过沿着线0-0将图对折,图3将位于图2的下方,且各个图上的A、B、C和D分别各自对齐。感应元件L3相对于振荡回路的感应元件L2A和L2B的取向使L2A和L3之间建立了负性互耦合系数,其结果是将电压加到振荡器晶体管Q1的基极上。要注意的是底面10b的主要部分是金属基板。还须指出的是正如本领域普通技术人员对工作在千兆赫兹频率范围内的振荡器的设计应公知的那样,所述电路板和元件要封装在一个屏蔽环境下,并且要适当地进行引线布置和采用接地技术。
本发明所述的新颖振荡器可以工作在千兆赫兹频率范围内用于处理数字ATV信号。该振荡器展示了低的相位噪声,扩展的频率范围,并相对地摆脱了不可校正的颤声。对本专业人员而言不背离本发明精神和范围的各种改型是显而易见的,本发明由所附的权利要求书限定。

Claims (1)

1.可在千兆赫频率范围内工作的振荡器,包括:
具有基极和发射极的振荡器晶体管;
包括与所述晶体管的所述发射极耦合的第一感应元件的可调振荡回路;
包括与所述可调谐振荡回路中所述第一感应元件耦合以在所述可调振荡回路的电流回路中产生电压的第二感应元件的耦合传输线;
将所述第二感应元件与所述第一感应元件以负互耦合系数关系设置的装置;
绝缘基底;
包含所述绝缘基底上经一箔图形的所述第一感应元件;
包含与所述第一箔图形并置的所述绝缘基底相应侧上第二箔图形的所述第二感应元件;以及
以正反馈方式将所述电压施加到所述晶体管的所述基极上,以扩展所述振荡器晶体管频率响应特征的装置。
CN98100731A 1997-03-12 1998-03-12 用于具有低相位噪声的数字高级电视信号的振荡器 Expired - Fee Related CN1095283C (zh)

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US815,560 1997-03-12
US815560 1997-03-12
US08/815,560 US5923221A (en) 1997-03-12 1997-03-12 Oscillator for digital ATV signals having low phase noise

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US7098750B2 (en) * 2004-08-16 2006-08-29 Mikhail Morkovich Wide frequency range agile voltage controlled oscillator
CN101273523B (zh) * 2005-09-27 2015-04-22 艾利森电话股份有限公司 振荡器电路
CN108417191B (zh) * 2018-02-28 2022-04-05 湖南城市学院 一种适用于乐谱识别的电钢琴即兴伴奏调配管理系统

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GB1593723A (en) * 1977-03-14 1981-07-22 Lignes Telegraph Telephon Ultra high frequency oscillators
DE3405683A1 (de) * 1984-02-17 1985-08-22 Blaupunkt-Werke Gmbh, 3200 Hildesheim Hochfrequenz-oszillator
US5564100A (en) * 1992-06-03 1996-10-08 Motorola, Inc. Frequency modulator having a modulation varactor coupled to output of a VCO
GB2280323B (en) * 1993-06-02 1998-01-28 Vtech Communications Ltd Voltage controlled oscillator apparatus
EP0778994A2 (en) * 1995-06-30 1997-06-18 Koninklijke Philips Electronics N.V. Tunable crystal oscillator with harmonic output

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DE19810618B4 (de) 2004-10-07
KR100317364B1 (ko) 2002-02-19
CA2231841C (en) 2000-05-30
US5923221A (en) 1999-07-13
CA2231841A1 (en) 1998-09-12
KR19980080177A (ko) 1998-11-25
DE19810618A1 (de) 1998-10-08

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