CN109507561B - Semiconductor characteristic stability measuring system based on variable magnetic field and free electrode - Google Patents
Semiconductor characteristic stability measuring system based on variable magnetic field and free electrode Download PDFInfo
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- CN109507561B CN109507561B CN201811375308.9A CN201811375308A CN109507561B CN 109507561 B CN109507561 B CN 109507561B CN 201811375308 A CN201811375308 A CN 201811375308A CN 109507561 B CN109507561 B CN 109507561B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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Abstract
The invention discloses a semiconductor characteristic stability measuring system based on a variable magnetic field and a free electrode, which comprises a magnet positioner, a free sample stage and a magnet-analyzer separation module, wherein the magnet positioner, the free sample stage and the magnet-analyzer separation module are made of diamagnetic materials such as PLA plastics and copper metal materials, and the magnet is far away from a probe of a testing system, so that the system is separated from the magnet in the aspect of magnetism, the stability of magnet control and sample property measurement is ensured, and the blank that the existing semiconductor parameter measuring system cannot integrate the magnetic field and the optical field is filled. On the other hand, the magnet has high deflection freedom, can provide a magnetic field with continuously adjustable size, angle and direction, and can support the experiment to research the uniform change of independent variables.
Description
Technical Field
The invention relates to the field of semiconductor materials, in particular to a semiconductor characteristic stability measuring system based on a variable magnetic field and a free electrode.
Background
The general purpose of the semiconductor parameter measurement system does not relate to a magnetism module, generally, the hardware of the semiconductor parameter measurement system is mostly composed of magnetic metal materials, and in a magnetic field, the hardware is easy to deviate from a set position, the stability of data measurement is seriously influenced, and even the set function is lost, so that only functional accessories such as temperature, light intensity and the like are provided. For example, most of the test platforms (including the base, the measuring arm, the probe, etc.) of the semiconductor parameter analyzer on the market at present are made of magnetic alloy materials, and when an external magnetic field is needed in an experiment, a magnetic field source (a magnet) is close to a sample and has strong attraction to the magnetic alloy part of the apparatus, so that the test probe is attracted by the magnet at a deviated position, cannot measure data, and is easy to cause serious scratch to the sample. With the development of multiferroic materials in recent years, ferroelectric photovoltaic materials with magnetoelectric coupling effect and abnormal photovoltaic effect are gradually becoming research hotspots of people, and for the magnetoelectric coupling materials, an external magnetic field is an extremely important research factor, so that the invention of a device capable of providing a uniformly-changed magnetic field without causing adverse effect on a photovoltaic effect measurement system is an urgent need for research in the field of multifunctional materials.
Disclosure of Invention
The invention aims to provide a semiconductor characteristic stability measuring system based on a variable magnetic field and a free electrode, which makes up the blank that a semiconductor parameter measuring system cannot integrate a magnetic field and an optical field.
The technical scheme adopted by the invention is as follows:
a semiconductor characteristic stability measuring system based on variable magnetic field and free electrode comprises a magnet position changer, a free sample stage and a magnet-analyzer separation module, wherein the magnet position changer comprises a magnet space frame, a magnet, a plastic lining disc, a first copper wire, a second copper wire and a Tesla meter,
the free sample platform is placed on the upper surface of the magnet space frame, vertically arranged channels are respectively arranged in two sides of the magnet space frame, the plastic lining disc is placed in the magnet space frame, the magnet is placed on the plastic lining disc, a first rotating copper rod and a second rotating copper rod which can rotate are arranged above the plastic lining disc in the magnet space frame, one end of the first copper wire is fixed on the first rotating copper rod, the other end of the first copper wire is fixed on the first rotating copper rod after bypassing the bottom of one side of the plastic lining disc, one end of the second copper wire is fixed on the second rotating copper rod, the other end of the second copper wire is fixed on the second rotating copper rod after bypassing the bottom of the other side of the plastic lining disc, and two ends of the first rotating copper rod and the second rotating copper rod both penetrate through the side surface of the magnet space frame,
the free sample table comprises a porous plate, agate balls, a first indium electrode and a second indium electrode, the porous plate is arranged on the magnet space frame, the upper surface of the porous plate is provided with at least 3 round holes, and the two round holes are respectively used for arranging the first indium electrode and the second indium electrode; the agate balls are placed in any other round hole, and form a triangular array with the positions of the first indium electrode and the second indium electrode; the sample is placed on the plane formed by the triangular array and is arranged in parallel to the porous plate, the sample is fully contacted with the first indium electrode and the second indium electrode, and the position of the hole in the porous plate is changed by the agate ball to balance the sample;
a test probe of a teslameter and the upper surface of the sample, the teslameter being used for detecting the magnetic field strength at the sample;
the magnet-analyzer separation module comprises two wires, a first indium electrode and a second indium electrode are respectively and correspondingly connected with one end of one wire, the other ends of the two wires respectively penetrate through a channel in the corresponding side face of the magnet space frame and horizontally extend to the outside from a hole in the bottom of the magnet space frame by a distance of L length, and the magnetic field intensity H generated by the magnet at the tail ends of the other ends of the two wires is less than 1 Oe. The other ends of the two wires are respectively connected with a detection channel of the semiconductor parameter analyzer 21.
Furthermore, the tail ends of the first rotating copper rod and the second rotating copper rod, which penetrate through one end of the side face of the magnet space frame, are relatively fixed through a fixing rod matched with the dovetail clamp.
Furthermore, the side parts of the first rotating copper rod and the second rotating copper rod, which correspond to the magnet space frame, are provided with limiting blocks, and the first rotating copper rod and the second rotating copper rod are prevented from falling off by fixing the relative positions of the limiting blocks through distortion deformation.
Furthermore, the plastic lining disc, the magnet space frame and the porous plate are formed by PLA plastics.
Furthermore, the first rotating copper rod and the second rotating copper rod are formed by cold-processing copper plastic deformation.
Furthermore, the magnet space frame is designed by AutoCAD drawing software and processed by Cura slicing software, and has obvious shape characteristics and complete originality. The porous plate is designed by AutoCAD drawing software and processed by Cura slicing software, has obvious shape characteristics and is completely original.
Further, the distance between the center of the first indium electrode and the center of the second indium electrode is 1 cm.
Furthermore, the relative positions of the agate ball, the first indium electrode and the second indium electrode can be adjusted freely by the free sample stage, so that a sample can be directly placed on the free sample stage without any other operation.
Furthermore, the size of the magnetic field of the magnet positioner is adjustable within the range of 0-Hmax, and Hmax is the magnetic field intensity of the magnet at a position 1cm away from the magnet. The size of Hmax is adjusted by replacing magnet materials or increasing or decreasing the number of magnets. The magnetic field intensity of the magnet positioner within the adjustable range is continuous.
Furthermore, the magnetic field direction of the magnet positioner is adjustable.
Furthermore, the magnetic field angle of the magnet position changer is adjustable within the range of 0-45 degrees. The setting angle of the magnetic field angle of the magnet positioner in the adjustable range is continuous.
Further, the lead of the magnet-analyzer separation module is made of a diamagnetic conductor material.
According to the technical scheme, diamagnetic materials such as PLA plastics and copper metal materials are used as a system main body, the magnet is far away from a probe of a test system, the system is separated from the magnet under the action of magnetic force, the stability of magnet control and sample property measurement is ensured, and the blank that the existing semiconductor parameter measurement system cannot integrate a magnetic field and an optical field is made up; on the other hand, the magnet has high deflection freedom, can provide a magnetic field with continuously adjustable size, angle and direction, and can support the experiment to research the uniform change of independent variables.
Drawings
The invention is described in further detail below with reference to the accompanying drawings and the detailed description;
FIG. 1 is a schematic structural diagram of a semiconductor property stability measurement system based on a variable magnetic field and a free electrode according to the present invention;
FIG. 2 is a schematic diagram of the working principle of the magnet positioner, the free sample stage and the magnet-analyzer separation module of the semiconductor characteristic stability measurement system based on the variable magnetic field and the free electrode according to the present invention;
FIG. 3 is a schematic diagram of a structure of a liner disk of a semiconductor characteristic stability measuring system based on a variable magnetic field and a free electrode according to the present invention;
FIG. 4 is a schematic top view of a multi-well plate of a semiconductor property stabilization measurement system based on a variable magnetic field and a free electrode according to the present invention;
FIG. 5 is a schematic diagram of the bottom structure of a multi-hole plate of a semiconductor characteristic stability measurement system based on a variable magnetic field and a free electrode according to the present invention;
FIG. 6 is a schematic diagram of a magnet space frame structure of a semiconductor characteristic stability measurement system based on a variable magnetic field and a free electrode according to the present invention;
FIG. 7 is a schematic bottom view of a magnet space frame of a semiconductor characteristic stability measurement system based on a variable magnetic field and a free electrode according to the present invention.
Detailed Description
As shown in one of figures 1-7, the invention discloses a semiconductor characteristic stability measuring system based on a variable magnetic field and a free electrode, which comprises a magnet positioner 1, a free sample stage 2 and a magnet-analyzer separation module 3, wherein the magnet positioner 1 comprises a magnet space frame 13, a magnet 4, a plastic lining disc 5, a first copper wire 6, a second copper wire 7 and a teslameter 14,
the free sample table 2 is placed on the upper surface of the magnet space frame 13, vertically arranged channels are respectively arranged in two sides of the magnet space frame 13, the plastic lining disc 5 is arranged between two sides of the magnet space frame 13, and the magnet 4 can be placed on the plastic lining disc 5 in a positive direction and a negative direction so as to control the N/S pole direction of the magnet and further provide the magnetic field direction of the magnetic field environment of the sample 22; the magnet space frame 13 is provided with a first rotating copper rod 8 and a second rotating copper rod 9 corresponding to the upper part of the plastic lining disc 5 in a rotating way, one end of a first copper wire 6 is fixed on the first rotating copper rod 8, the other end of the first copper wire 6 is fixed on the first rotating copper rod 8 after bypassing the bottom of one side of the plastic lining disc 5, one end of a second copper wire 7 is fixed on the second rotating copper rod 9, the other end of the second copper wire 7 is fixed on the second rotating copper rod 9 after bypassing the bottom of the other side of the plastic lining disc 5, both ends of the first rotating copper rod 8 and the second rotating copper rod 9 pass through the side surface of the magnet space frame 13,
specifically, the length of the first copper wire 6 in the vertical direction of the second copper wire 7 is synchronously changed by adjusting the first rotating copper rod 8 and the second rotating copper rod 9 to lift the plastic lining disc 5, and the distance between the magnet 4 and the sample 22 is changed, so that the magnetic field intensity borne by the sample 22 is changed; the relative length of the vertical parts of the first copper wire 6 and the second copper wire 7 is changed by adjusting the first rotating copper rod 8 and the second rotating copper rod 9 to rotate the plastic lining disc 5, so that the angle between the magnet 4 and the sample 22 is changed, and the direction of the magnetic field borne by the sample 22 is changed; the first rotating copper rod 8 and the second rotating copper rod 9 are adjusted each time and are fixed with the dovetail clips 10 at two ends through the fixed rod 12 at the tail ends.
The free sample table 2 is used for horizontally placing the sample 22, can freely select a test area in the sample 22, and can be directly placed and taken down, so that the test is convenient. The free sample table 2 comprises a porous plate 15, an agate ball 16, a first indium electrode 17 and a second indium electrode 18, the porous plate 15 is arranged on the magnet space frame 13, the upper surface of the porous plate 15 is provided with at least 3 circular holes, and the two circular holes are respectively used for arranging the first indium electrode 17 and the second indium electrode 18; the agate balls 16 are placed in any other round hole, and the positions of the agate balls 16, the first indium electrode 17 and the second indium electrode 18 form a triangular array by changing the placement positions of the agate balls 16 in the holes; the sample 22 is placed on the plane formed by the triangular array and is arranged in parallel to the porous plate 15, the sample 22 is fully contacted with the first indium electrode 17 and the second indium electrode 18, and the agate ball 16 balances the sample 22 by changing the positions of the holes on the porous plate 15;
the test probe of the teslameter 14 is attached to the upper surface of the sample 22 and the teslameter 14 is used to detect the magnetic field strength at the sample 22 for manual feedback field adjustment.
The magnet-analyzer separation module 3 is used for separating the magnet from the test probe and other metal materials of the semiconductor analyzer, and preventing the magnet and the test probe from mutually attracting to damage a system test structure and influence the test of the sample 22. The magnet-analyzer separation module 3 comprises two wires 19, the first indium electrode 17 and the second indium electrode 18 are respectively and correspondingly connected with one end of one wire 19, the other ends of the two wires 19 respectively penetrate through channels in the corresponding side faces of the magnet space frame 13 and horizontally extend to the outside from a hole in the bottom of the magnet space frame 13 by a distance of L, and the magnetic field intensity H generated by the magnet 4 at the tail end of the other end of the two wires 19 is less than 1 Oe. The other ends of the two wires 19 are respectively connected to the detection channels of the semiconductor parameter analyzer 21.
The magnet-analyzer separation module 3 has the function of keeping the magnet 4 away from the probe of the test system, so that the semiconductor parameter analyzer 21 is separated from the magnet 4 in magnetism, the tail ends of the two leads are connected with the test channel of the semiconductor parameter analyzer 21, the magnetic field intensity H generated by the magnet 4 at the tail end is less than 1Oe, the field intensity is not enough to enable the magnet 4 to change the probe position of the semiconductor parameter analyzer 21, the control of the magnet 4 and the stability of the property measurement of the sample 22 are ensured, and the blank that the existing semiconductor parameter measurement system cannot integrate the magnetic field and the optical field is made up. On the other hand, the magnet 4 has high displacement freedom, can provide a magnetic field with continuously adjustable size, angle and direction, and can support the experiment to research the uniform change of independent variables.
Further, the ends of the first rotary copper rod 8 and the second rotary copper rod 9, which penetrate through one end of the side surface of the magnet space frame 13, are relatively fixed through the fixing rod 12 and the dovetail clip 10.
Further, the first rotating copper rod 8 and the second rotating copper rod 9 are provided with a limiting block 20 at the side corresponding to the magnet space frame 13, and the first rotating copper rod 8 and the second rotating copper rod 9 are prevented from falling off by fixing the relative positions through the limiting block 20 deformed by twisting.
Further, the plastic lining disc 5, the magnet space frame 13 and the porous plate 15 are formed by PLA plastics.
Further, the first rotating copper rod 8 and the second rotating copper rod 9 are formed by cold-working copper plastic deformation.
Furthermore, the magnet space frame 13 is designed by AutoCAD drawing software and processed by Cura slicing software, so that the magnet space frame has obvious shape characteristics and is completely original. The porous plate 15 is designed by AutoCAD drawing software and processed by Cura slicing software, has obvious shape characteristics and is completely original. And printing PLA plastic by using a 3D printing technology for molding, wherein the softening temperature Tmax is more than or equal to 70 ℃, so that the temperature T of the system working environment is less than or equal to 60 ℃.
Further, the distance between the center of the first indium electrode 17 and the center of the second indium electrode 18 is 1 cm. Therefore, the adjustable distance between the testing electrodes of the sample 22 is about 1cm, but the position of the sample 22 can be freely adjusted because the placement position of the agate balls 16 in the holes of the free sample table 2 can be changed, and the matching adaptability of the distance D between the two electrodes of the sample 22 and the distance D is improved.
Furthermore, the relative positions of the agate ball 16, the first indium electrode 17 and the second indium electrode 18 can be adjusted freely by the free sample stage 2, and the sample 22 can be directly placed on the free sample stage without any other operation.
The magnet positioner 1, the free sample stage 2 and the magnet-analyzer separation module 3 are made of diamagnetic materials such as PLA plastics and copper metal materials, the PLA (polylactic acid) plastics is a novel bio-based and renewable biodegradable material, is made of starch raw materials provided by renewable plant resources (such as husks of cereals, straws and wheat straws) and is a green high polymer material, it has good biodegradability, can be completely degraded by microorganisms in the nature under specific conditions after use, finally generates carbon dioxide and water, does not pollute the environment, is very beneficial to environmental protection, is a well-known environment-friendly material, the melting point is 155 ℃ to 185 ℃, and the system material is subjected to high-temperature experiments in a laboratory to prove that the softening temperature is 80 ℃, therefore, the temperature of the system working environment can be below 60 ℃, and the system covers a common working environment temperature zone.
Furthermore, the size of the magnetic field of the magnet positioner 1 is adjustable within the range of 0-Hmax, and Hmax is the magnetic field intensity of the magnet 4 at the position 1cm away from the magnet 4. The size of Hmax is adjusted by replacing the material of the magnet 4 or increasing or decreasing the number of the magnets 4. The magnetic field intensity of the magnet positioner 1 is continuously set within an adjustable range.
Further, the magnetic field direction of the magnet positioner 1 is adjustable.
Further, the magnetic field angle of the magnet position changer 1 is adjustable within the range of 0-45 degrees. The setting angle of the magnetic field angle of the magnet positioner 1 in the adjustable range is continuous.
Further, the lead wire 19 of the magnet-analyzer separation module 3 is made of a diamagnetic conductor material.
By adopting the technical scheme, diamagnetic materials such as PLA plastics and copper metal materials are used as a system main body, the magnet 4 is far away from a probe of a test system, the system is separated from the magnet 4 under the action of magnetic force, the stability of controlling the magnet 4 and measuring the properties of the sample 22 is ensured, and the blank that the existing semiconductor parameter measuring system cannot integrate a magnetic field and an optical field is made up; on the other hand, the magnet 4 has high displacement freedom, can provide a magnetic field with continuously adjustable size, angle and direction, and can support the experiment to research the uniform change of independent variables.
Claims (10)
1. A semiconductor characteristic stability measuring system based on a variable magnetic field and a free electrode is characterized in that: which comprises a magnet positioner, a free sample stage and a magnet-analyzer separation module, wherein the magnet positioner comprises a magnet space frame, a magnet, a plastic lining disc, a first copper wire, a second copper wire and a Tesla meter,
the free sample stage is placed on the upper surface of the magnet space frame, vertically arranged channels are respectively arranged in two sides of the magnet space frame, the plastic lining disc is arranged between two sides of the magnet space frame, the magnet is arranged on the plastic lining disc, the magnet space frame is rotatably provided with a first rotating copper rod and a second rotating copper rod corresponding to the upper part of the plastic lining disc, one end of the first copper wire is fixed on the first rotating copper rod, the other end of the first copper wire is fixed on the first rotating copper rod after bypassing the bottom of one side of the plastic lining disc, one end of the second copper wire is fixed on the second rotating copper rod, the other end of the second copper wire is fixed on the second rotating copper rod after bypassing the bottom of the other side of the plastic lining disc, and two ends of the first rotating copper rod and the second rotating copper rod both penetrate through the side surface of the magnet space frame,
the free sample table comprises a porous plate, agate balls, a first indium electrode and a second indium electrode, the porous plate is arranged on the magnet space frame, the upper surface of the porous plate is provided with at least 3 round holes, and the two round holes are respectively used for arranging the first indium electrode and the second indium electrode; the agate balls are placed in any other round hole, and form a triangular array with the positions of the first indium electrode and the second indium electrode; the sample is placed on the plane formed by the triangular array and is arranged in parallel to the porous plate, the sample is fully contacted with the first indium electrode and the second indium electrode, and the position of the hole in the porous plate is changed by the agate ball to balance the sample;
a test probe of a teslameter and the upper surface of the sample, the teslameter being used for detecting the magnetic field strength at the sample;
the magnet-analyzer separation module comprises two wires, a first indium electrode and a second indium electrode are respectively and correspondingly connected with one end of one wire, the other ends of the two wires respectively penetrate through a channel in the corresponding side face of the magnet space frame and horizontally extend for a distance of L length from a hole in the bottom of the magnet space frame to the outside, the magnetic field intensity H generated by the magnet at the tail end of the other ends of the two wires is less than 1Oe, and the other ends of the two wires are respectively connected with a detection channel of the semiconductor parameter analyzer.
2. The system of claim 1, wherein the system comprises: the tail ends of the first rotating copper rod and the second rotating copper rod, which penetrate through one end of the side face of the magnet space frame, are relatively fixed through the fixing rod matched with the dovetail clamp.
3. The system of claim 1, wherein the system comprises: the side positions of the first rotating copper rod and the second rotating copper rod, which correspond to the magnet space frame, are provided with limiting blocks, and the first rotating copper rod and the second rotating copper rod are prevented from falling off through the fixed relative positions of the limiting blocks in torsional deformation.
4. The system of claim 1, wherein the system comprises: the plastic lining disc, the magnet space frame and the porous plate are formed by PLA plastics.
5. The system of claim 1, wherein the system comprises: the first rotating copper rod and the second rotating copper rod are formed by cold-processing copper plastic deformation.
6. The system of claim 1, wherein the system comprises: the distance between the center of the first indium electrode and the center of the second indium electrode is 1 cm.
7. The system of claim 1, wherein the system comprises: the size of the magnetic field of the magnet positioner is adjustable within the range of 0-Hmax, Hmax is the magnetic field intensity of the magnet at the position 1cm away from the magnet, Hmax is adjusted by replacing magnet materials or increasing or decreasing the number of the magnets, and the magnetic field intensity of the magnet positioner within the adjustable range is continuous.
8. The system of claim 1, wherein the system comprises: the magnetic field direction of the magnet positioner is adjustable.
9. The system of claim 1, wherein the system comprises: the magnetic field angle of the magnet position changer is adjustable within the range of 0-45 degrees, and the setting angle of the magnetic field angle within the adjustable range is continuous.
10. The system of claim 1, wherein the system comprises: the wires of the magnet-analyzer separation module are made of a diamagnetic conductor material.
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| CN112285452B (en) * | 2020-09-10 | 2023-03-03 | 河北工业大学 | Device and method for measuring low-temperature characteristics of electrical parameters |
| CN113067549A (en) * | 2021-03-26 | 2021-07-02 | 福建师范大学 | Physical characteristic comprehensive test system for electromagnetic and optical integrated test |
| CN113118635A (en) * | 2021-04-21 | 2021-07-16 | 深圳信息职业技术学院 | Magnetic field laser polishing device and method |
| CN113193836A (en) * | 2021-04-30 | 2021-07-30 | 福建师范大学 | Method for modulating photovoltaic effect of thin film by magnetic field |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3932809A (en) * | 1974-05-28 | 1976-01-13 | Eastman Kodak Company | Deflector galvanometer |
| US6583617B2 (en) * | 2000-08-24 | 2003-06-24 | Kemp Corporation | Barkhausen noise measurement probe with magnetoresistive sensor and cylindrical magnetic shield |
| CN101446627A (en) * | 2008-12-18 | 2009-06-03 | 中国科学院微电子研究所 | Vertical variable magnetic field device |
| CN202256022U (en) * | 2011-09-28 | 2012-05-30 | 兰州大学 | Multipoint test system for magnetic field and heat distribution on superconductor dynamic surface |
| CN105355714A (en) * | 2015-11-06 | 2016-02-24 | 南京理工大学 | Double-layer perovskite film with ferroelectric and semiconductor photovoltaic effects |
| CN106006867A (en) * | 2016-06-27 | 2016-10-12 | 南京师范大学 | Non-membrane electrodialysis capacitance desalting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090148729A1 (en) * | 1999-01-06 | 2009-06-11 | Blacklight Power Company | Inorganic-hydrogen-polymer and hydrogen-polymer compounds and applications thereof |
| US10610294B2 (en) * | 2012-04-22 | 2020-04-07 | Newuro, B.V. | Devices and methods for transurethral bladder partitioning |
-
2018
- 2018-11-19 CN CN201811375308.9A patent/CN109507561B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3932809A (en) * | 1974-05-28 | 1976-01-13 | Eastman Kodak Company | Deflector galvanometer |
| US6583617B2 (en) * | 2000-08-24 | 2003-06-24 | Kemp Corporation | Barkhausen noise measurement probe with magnetoresistive sensor and cylindrical magnetic shield |
| CN101446627A (en) * | 2008-12-18 | 2009-06-03 | 中国科学院微电子研究所 | Vertical variable magnetic field device |
| CN202256022U (en) * | 2011-09-28 | 2012-05-30 | 兰州大学 | Multipoint test system for magnetic field and heat distribution on superconductor dynamic surface |
| CN105355714A (en) * | 2015-11-06 | 2016-02-24 | 南京理工大学 | Double-layer perovskite film with ferroelectric and semiconductor photovoltaic effects |
| CN106006867A (en) * | 2016-06-27 | 2016-10-12 | 南京师范大学 | Non-membrane electrodialysis capacitance desalting device |
Non-Patent Citations (3)
| Title |
|---|
| A SEPIC fed inductive charging device for electric vehicles;Faical Turki 等;《4th International Conference on Power Engineering, Energy and Electrical Drives》;20130517;第906-910页 * |
| 二元掺杂系列La-（Ca，Ba）-Mn-O材料巨磁电阻特性研究;陈水源 等;《稀有金属材料与工程》;20030831;第32卷(第8期);第615-620页 * |
| 积分方程法在埋弧炉三维磁场计算中的应用;戈宝军 等;《哈尔滨电工学院学报》;19930331;第16卷(第1期);第26-33页 * |
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