CN203811124U - Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor - Google Patents
Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor Download PDFInfo
- Publication number
- CN203811124U CN203811124U CN201420111688.6U CN201420111688U CN203811124U CN 203811124 U CN203811124 U CN 203811124U CN 201420111688 U CN201420111688 U CN 201420111688U CN 203811124 U CN203811124 U CN 203811124U
- Authority
- CN
- China
- Prior art keywords
- sensor
- radio frequency
- thin film
- monocrystalline silicon
- silicon thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model belongs to the strain measurement field, and specifically relates to a flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor. The flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor comprises a substrate, a sensor and an input terminal and output terminals which are used for test. The sensor is formed by two common-anode flexible radio frequency monocrystalline silicon thin film PIN type transistors which are vertically connected. Anodes of the two PIN type transistors are connected with the input terminal of the sensor through interconnected metal in a common-anode connection manner, and cathodes of the two PIN type transistors are respectively connected with the output terminals of the sensor through interconnected metal. Changes of S parameters of the two transistors under different strain can be simultaneously detected by the sensor, and then dynamic strain values at the horizontal direction and the vertical direction are respectively obtained according to a relationship between the S parameters and the dynamic strain. Detection efficiency is improved, cost is effectively reduced, and the flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor is a flexible radio frequency strain sensor with better performance.
Description
Technical field
The utility model belongs to strain measurement technique field, is specifically related to the two-way type of dynamic strain sensor of a kind of flexible radio frequency monocrystalline silicon thin film.
Background technology
Dynamic strain measurement is generally the deformation monitoring of research work frequency at tens KHz or hundreds of KHz, not only will detect the generation of mechanical deformation, and will detect in real time the variation of mechanical deformation.Traditional dynamic strain measurement mode is to utilize resistance strain gage composition measuring bridge form substantially, in conjunction with corresponding peripheral circuit, adopts the mode of frequency modulation to form dynamic one direction strain measurement system.The dynamic strain measurement system forming based on this basic sensitive element of resistance strain gage, due to the mechanical hysteresis characteristic of resistance strain gage itself and the design of peripheral circuit, all can affect precision and the scope of kinetic measurement.Strain measurement is mainly used in Dynamic Signal fields of measurement, and therefore the analysis ability of the dynamic perfromance to sensor is had relatively high expectations.In design when measuring equipment, sensor designs corresponding follow-up data processing in dynamic disturbance situation, and to carry out the dynamic disturbance impact of abatement apparatus particularly important.One direction strain measurement system once obtains the data that only can obtain a direction of horizontal or vertical direction, not only measures inconvenience, but also can affect precision and the scope of kinetic measurement.
Summary of the invention
The purpose of this utility model is to provide a kind of sensor of the high frequency dynamic strain that can simultaneously measure horizontal direction and vertical direction both direction, realizes flexible strain dynamic monitoring, improves precision, the scope of detection efficiency and kinetic measurement, effectively reduces costs.
The technical solution adopted in the utility model is:
The utility model comprises substrate, sensor and input end and output terminal for testing.Described substrate comprises plastic base PET and the SU8 material layer for bonding sensor and plastic base, described sensor is made up of the flexible radio frequency monocrystalline silicon thin film PIN transistor npn npn of the extremely vertical connected mode of two common anodes, PIN transistor npn npn main body is one deck flexible radio frequency monocrystalline silicon thin film, this film is not by P type doped region, HeNXing doped region in doped region forms, doped region, between HeNXing doped region, P type doped region, does not form PIN knot.P type doped region is the positive pole of PIN transistor npn npn, the positive pole of two PIN transistor npn npns adopts the extremely vertical connected mode of common anode to connect together with sensor input end by interconnected metal, N-type doped region is the negative pole of PIN transistor npn npn, two PIN transistor npn npn negative poles are connected by the output terminal of interconnected metal and sensor respectively, and interconnected metal is made up of titanium laminar metal.
The utility model beneficial effect is for using flexible radio frequency monocrystalline silicon thin film PIN transistor npn npn as type of dynamic strain sensor part, adopt the frequency sweep method of input in real time, be the variation of S parameter according to flexible radio frequency monocrystalline silicon thin film PIN transistor npn npn its scattering parameter under dynamic load bending condition of two orthogonal placements, and then according to the relation between S parameter and dynamic strain, obtain respectively the size of the dynamic strain of horizontal direction and vertical direction both direction, improve detection efficiency, effectively reduce cost, precision and the scope of kinetic measurement are improved, it is a kind of flexible radio frequency strain transducer of better performances.Because flexible radio frequency monocrystalline silicon thin film PIN transistor npn npn itself belongs to high-frequency element, frequency of operation is at megahertz (MHz) to 20 GHzs (GHz), and therefore foot goes for the dynamic strain measurement of KHz (KHz).
Brief description of the drawings
Fig. 1 is the front view of the two-way type of dynamic strain sensor structure of flexible radio frequency monocrystalline silicon thin film, and description of reference numerals is as follows:
Fig. 2 is the upward view of the two-way type of dynamic strain sensor structure of flexible radio frequency monocrystalline silicon thin film.
Fig. 3 is the equivalent circuit diagram of the two-way type of dynamic strain sensor of flexible radio frequency monocrystalline silicon thin film.
Fig. 4 is the dynamic strain measurement schematic diagram of the two-way type of dynamic strain sensor of flexible radio frequency monocrystalline silicon thin film
1, PET plastic base, 2, SU8 material layer, 3 and 8 monocrystalline silicon thin film P type doped regions, 4 and 9 not doped regions of monocrystalline silicon thin film, 5 and 10 monocrystalline silicon thin film N-type doped regions, 6, interconnected metal, 7, the input end of sensor, the output terminal of 11,12 sensors, 13, equivalent inductance, 14, equivalent resistance, 15, equivalent capacity, 16, flexible radio frequency strain transducer, 17, flexible parent metal, 18, external dynamic load, 19, radio-frequency cable, 20, network analyzer.
Embodiment
Below in conjunction with Fig. 1, Fig. 2, Fig. 3, Fig. 4 and embodiment, the present invention is further described.
The utility model comprises substrate, sensor and input end and output terminal for testing.Substrate is used for the main part of supporting flexible radio frequency dynamic bidirectional strain transducer, and it comprises PET plastic base 1 and SU8 bonding coat 2.The two-way strain transducer of flexible radio frequency monocrystalline silicon thin film is just produced on PET plastic base 1, has one deck SU8 material layer 2, as the bonding coat between PET plastic base 1 and sensor at PET plastic base 1 upper surface.Sensor comprises two flexible radio frequency monocrystalline silicon thin film PIN transistor npn npns that adopt the extremely vertical connected modes of common anodes, and PIN transistor npn npn is not by P type doped region 3 and 8, doped region 4 and 9, N-type doped region 5 and 10 3 parts form.The P type doped region 3 and 8 of two PIN transistor npn npns is positive poles of two PIN transistor npn npns, they adopt the extremely vertical connected mode of common anode to connect together with sensor input end 7 by interconnected metal 6, N-type doped region 5 and 10 is negative poles of two PIN transistor npn npns, they are connected with 12 by the output terminal 11 of interconnected metal 6 and sensor respectively, and interconnected metal 6 is made up of titanium laminar metal.Sensor has an input end and two output terminals, network analyzer is the input end 7 at sensor by a positivity shorting pin loaded, two negativity probes are carried in respectively on the output terminal 11 and 12 of sensor, by the mode of frequency sweep, sensor is carried out the measurement of S parameter, and then two S parameters that film PIN transistor npn npn is corresponding that obtain, according to the relation between S parameter and bending strain, realize the measurement of two-way dynamic strain.
PET plastic base 1 also can replace with other types common plastics or flexible material.
Fig. 3 is the equivalent circuit diagram of the two-way type of dynamic strain sensor of flexible radio frequency monocrystalline silicon thin film.Shown in Fig. 3 that its circuit can form by equivalent inductance 13, equivalent resistance 14, equivalent capacity 15, circuit illustrates.
When measurement, two-way flexible radio frequency monocrystalline silicon thin film type of dynamic strain sensor 16 is fixed on object under test, flexible parent metal 17 for the test in figure, applies dynamic load by external dynamic load 18 to flexible parent metal 17.The input end 7 of the two-way type of dynamic strain sensor of flexible radio frequency monocrystalline silicon thin film is connected with network analyzer 20 by radio-frequency cable 19 respectively with output terminal 11,12.Adopt the i.e. input of three probes, two outputs, measure input signal and input from the input end 7 of sensor, measure output signal and export from two output terminals 11 and 12 of sensor respectively.Three probes are connected to network analyzer 20 by three RF cables 19 respectively.The two-way type of dynamic strain sensor of network analyzer 20 flexible radio frequency monocrystalline silicon thin film provides direct current biasing, makes two PIN manage equal forward conduction work.After calibration network analyser 20, produce from the output terminal of network analyzer the input end 7 that enters sensor from 45 megahertzes to the radiofrequency signal of 20 GHzs, then export from the output terminal 11 and 12 of sensor respectively, be back to again the input end of network analyzer 20, network analyzer can be processed the signal of the two-way strain transducer output of the flexible radio frequency receiving like this, and the form that is S parameter with scattering parameter shows.
Flexible radio frequency type of dynamic strain sensor is attached on flexible parent metal 17, makes flexible parent metal produce two-way dynamic strain by loading external dynamic load 18.Network analyzer 20 is to the two-way type of dynamic strain sensor of flexible radio frequency monocrystalline silicon thin film input live signal, the mechanical deformation that the S parameter of the two-way type of dynamic strain sensor of the two-way monocrystalline silicon thin film of flexible radio frequency produces with load and synchronously changing.Real-time change by the two-way type of dynamic strain sensor S parameter of flexible radio frequency monocrystalline silicon thin film with strain, sets up strain-S parameter model, and then obtains strain-time relationship, realizes the measurement of flexible radio frequency dynamic strain.
Note: flexible radio frequency monocrystalline silicon thin film PIN transistor npn npn is called for short PIN type crystal.
Claims (1)
1. the two-way type of dynamic strain sensor of flexible radio frequency monocrystalline silicon thin film, comprise substrate, sensor and input end and output terminal for testing, wherein: substrate comprises plastic base, for the material layer of bonding sensor and plastic base, it is characterized in that described sensor is made up of the flexible radio frequency monocrystalline silicon thin film PIN transistor npn npn of the extremely vertical connected mode of two common anodes, PIN transistor npn npn main body is one deck flexible radio frequency monocrystalline silicon thin film, this film is by P type doped region, HeNXing doped region in doped region does not form, doped region is not between HeNXing doped region, P type doped region, form PIN knot, P type doped region is the positive pole of PIN transistor npn npn, the positive pole of two PIN transistor npn npns adopts common anode utmost point connected mode to connect together with sensor input end by interconnected metal, N-type doped region is the negative pole of PIN transistor npn npn, two PIN transistor npn npn negative poles are connected by the output terminal of interconnected metal and sensor respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420111688.6U CN203811124U (en) | 2014-03-12 | 2014-03-12 | Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420111688.6U CN203811124U (en) | 2014-03-12 | 2014-03-12 | Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203811124U true CN203811124U (en) | 2014-09-03 |
Family
ID=51449862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420111688.6U Expired - Fee Related CN203811124U (en) | 2014-03-12 | 2014-03-12 | Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203811124U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449764A (en) * | 2016-11-23 | 2017-02-22 | 天津大学 | Flexible thin-film bottom-gate dual-channel transistor |
| CN106452408A (en) * | 2016-11-23 | 2017-02-22 | 天津大学 | Flexible thin film radio frequency switch |
-
2014
- 2014-03-12 CN CN201420111688.6U patent/CN203811124U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449764A (en) * | 2016-11-23 | 2017-02-22 | 天津大学 | Flexible thin-film bottom-gate dual-channel transistor |
| CN106452408A (en) * | 2016-11-23 | 2017-02-22 | 天津大学 | Flexible thin film radio frequency switch |
| CN106449764B (en) * | 2016-11-23 | 2023-07-18 | 天津大学 | Flexible thin film bottom gate double-channel transistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104792255B (en) | A kind of film thickness test device and film thickness test method | |
| CN203811124U (en) | Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor | |
| CN103529299B (en) | For studying the four lines measuring method of conductive polymer composite pressure drag characteristic | |
| CN101982731B (en) | Flexible film microwave strain sensor | |
| CN106353589A (en) | Coupling detector | |
| CN104977331A (en) | Cereal moisture detector | |
| CN108180820A (en) | A kind of omnidirectional's strain detecting method based on Circular microstrip patch antenna | |
| CN202256503U (en) | Blood impedance analysis instrument | |
| CN104678339B (en) | Calibration device, system and method for probe type microwave voltage measurement system | |
| CN203930003U (en) | A kind of simulating signal excitation system for chip detection | |
| CN203224510U (en) | Wind direction sensor | |
| CN101995235B (en) | Microwave diode-based dynamic strain measuring device | |
| CN102353699A (en) | Method for sampling of humidity sensors by using square waves | |
| CN107945533B (en) | Detection method for sensitivity and stability of geomagnetic vehicle detector | |
| CN204129211U (en) | A kind of base passive and wireless multi-parameter sensor intelligent electric energy meter temperature rise detecting device | |
| CN103698661A (en) | Cable breakage detection device | |
| CN202903883U (en) | Device of testing piezoresistive performance of material | |
| CN203069744U (en) | Semiconductor triode parameter tester | |
| CN206096256U (en) | A power sensor for RF power reflectometer | |
| CN206096254U (en) | Coupling wave detector | |
| CN202543208U (en) | Device for monitoring behaviors and states of cells in real time | |
| CN201732110U (en) | Multimeter | |
| CN206710501U (en) | A kind of two-way load sense circuitry for square-wave generator | |
| CN204214970U (en) | The automatic test device of high-efficiency and precision Switching Power Supply sensor assembly | |
| CN103728351A (en) | Novel soil moisture sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140903 Termination date: 20160312 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |