CN106452408A - Flexible thin film radio frequency switch - Google Patents
Flexible thin film radio frequency switch Download PDFInfo
- Publication number
- CN106452408A CN106452408A CN201611047627.8A CN201611047627A CN106452408A CN 106452408 A CN106452408 A CN 106452408A CN 201611047627 A CN201611047627 A CN 201611047627A CN 106452408 A CN106452408 A CN 106452408A
- Authority
- CN
- China
- Prior art keywords
- thin film
- pin diode
- silicon thin
- monocrystalline silicon
- metal interconnection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000012790 adhesive layer Substances 0.000 claims abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 41
- 239000010408 film Substances 0.000 claims description 21
- 229920003023 plastic Polymers 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention relates to a flexible thin film radio frequency switch which comprises a substrate. The substrate is a flexible substrate, a SU8 adhesive layer is arranged on the substrate, and a first PIN diode, a second PIN diode, an input end, an output end and a ground terminal are respectively arranged on the upper surface of the SU8 adhesive layer, wherein one end of the first PIN diode is connected with the input end by a metal interconnection line; the other end of the first PIN diode is respectively connected with the output end and one end of the second PIN diode by metal interconnection lines; and the other end of the second PIN diode is connected with the ground terminal by a metal interconnection line. The invention provides the switch which is developed by combining a thin film transfer process and utilizing the flexible PIN diodes and can be applied to the field of flexible radio frequency. A production process of the flexible thin film radio frequency switch disclosed by the invention is completely compatible to a flexible thin film diode, the PIN diodes and the like. The flexible thin film radio frequency can be applied to numerous wireless portable devices, such as a mobile phone and a radar system. By combined use of the monocrystal silicon thin film transfer process, the switch with a low parasitic resistance and a high radio frequency characteristic is implemented.
Description
Technical field
The present invention relates to a kind of radio-frequency (RF) switch.A kind of more particularly to fexible film based on fexible film PIN diode
Radio-frequency (RF) switch.
Background technology
In the past ten years, flexible electronic device quickly grows, and many research staff are put in the research to which.Respectively
The electronic product for planting various kinds is developed, including Flexible Displays, electronic tag and some low cost integrated circuits.Remove and take second place
Outward, some electronic products need normally to run under microwave radio, such as portable radio machine, communication antenna, space remote sensing and
Military Application etc..Flexible electronic product is lighter compared with based on hard circuit, more resistant to impact.By today, with the PET of low cost
May apply in some amplifier blocks for the high-speed flexible thin film transistor (TFT) of substrate.Traditional opening with hard silicon as substrate
Pass is not flexible, incompatible with flexiblesystem.
Content of the invention
The technical problem to be solved is to provide a kind of fexible film radio frequency that can be applicable to flexible radio frequency field
Switch.
The technical solution adopted in the present invention is：A kind of fexible film radio-frequency (RF) switch, including substrate, described substrate is soft
Property substrate, is provided with SU8 adhesive layer, is respectively arranged with above the SU8 adhesive layer on the substrate：First PIN diode,
Second PIN diode, input, output and ground, wherein, one end of first PIN diode passes through metal interconnection
The described input of line connection, the other end of first PIN diode connects outfan and the respectively by metal interconnection wire
One end of two PIN diodes, the other end of second PIN diode connects earth terminal by metal interconnection wire.
The first described PIN diode includes successively connected first monocrystalline silicon thin film, the second monocrystalline silicon thin film side by side
With the 3rd monocrystalline silicon thin film, wherein, the first described monocrystalline silicon thin film is p-type doped region and is input into by metal interconnection wire connection
End, described the second monocrystalline silicon thin film undoped region, the 3rd described monocrystalline silicon thin film is n-type doping area by metal interconnection
Line connects outfan and the second PIN diode respectively.
The second described PIN diode includes successively connected 4th monocrystalline silicon thin film, the 5th monocrystalline silicon thin film side by side
With the 6th monocrystalline silicon thin film, wherein, the 4th described monocrystalline silicon thin film is p-type doped region and is connected by metal interconnection wire respectively
First PIN diode and outfan, described the 5th monocrystalline silicon thin film undoped region, the 6th described monocrystalline silicon thin film is N-type
Doped region simultaneously connects earth terminal by metal interconnection wire.
Described flexible substrate is PET or PEN plastics or PI plastics.
Described metal interconnection wire is constituted by titanium and gold metal layer are folded.
A kind of fexible film radio-frequency (RF) switch of the present invention, is combination film shifting process, is developed using flexible PIN diode
The switch that can be applicable to flexible radio frequency field for going out.Processing technology of the present invention is complete with flexible thin-film transistor, PIN diode etc.
Compatible.Which can be applicable to many wireless portable devices, such as mobile phone and radar system.Work is shifted by being used in combination monocrystalline silicon thin film
Skill realizes the switch of low dead resistance, radio frequency characteristics.
Description of the drawings
Fig. 1 is a kind of side view of fexible film radio-frequency (RF) switch of the present invention；
Fig. 2 is a kind of top view of fexible film radio-frequency (RF) switch of the present invention；
Fig. 3 is a kind of equivalent circuit diagram of fexible film radio-frequency (RF) switch of the present invention.
In figure
1：Substrate 2：SU8 adhesive layer
3：First monocrystalline silicon thin film 4：Second monocrystalline silicon thin film
5：3rd monocrystalline silicon thin film 6：4th monocrystalline silicon thin film
7：5th monocrystalline silicon thin film 8：6th monocrystalline silicon thin film
9：Input 10：Outfan
11：Earth terminal 12：Metal interconnection wire
Specific embodiment
With reference to embodiment and accompanying drawing, a kind of fexible film radio-frequency (RF) switch of the present invention is described in detail.
A kind of fexible film radio-frequency (RF) switch of the present invention, is mainly made up of the PIN diode of two series connection.Combination film turns
Technique is moved, and the switch that can be applicable to flexible radio frequency field, processing technology and fexible film crystalline substance is developed using flexible PIN diode
Body pipe, PIN diode etc. are completely compatible.
As shown in Figure 1 and Figure 2, a kind of fexible film radio-frequency (RF) switch of the present invention, including substrate 1, for supporting flexible radio frequency
The main part of switch.Described substrate 1 is flexible substrate, and described flexible substrate 1 is PET or PEN plastics or PI modeling
Material.SU8 adhesive layer 2 is provided with the substrate 1, is respectively arranged with above the SU8 adhesive layer 2：The first of two series connection
PIN diode A and the second PIN diode B, input 9, outfan 10 and earth terminal 11, wherein, the first PIN diode A
One end by the described input 9 of metal interconnection wire connection, the other end of the first PIN diode A passes through metal interconnection
Line connects one end of outfan 10 and the second PIN diode B respectively, and the other end of the second PIN diode B is mutual by metal
On line 12 connects earth terminal 11.Described metal interconnection wire 12 is constituted by titanium and gold metal layer are folded.
The first described PIN diode A includes successively side by side that connected first monocrystalline silicon thin film 3, the second monocrystal silicon are thin
Film 4 and the 3rd monocrystalline silicon thin film 5, wherein, the first described monocrystalline silicon thin film 3 is p-type doped region and passes through metal interconnection wire 12
Connection input 9, described 4 undoped region of the second monocrystalline silicon thin film, the 3rd described monocrystalline silicon thin film 5 be n-type doping area simultaneously
Outfan 10 and the second PIN diode B are connected respectively by metal interconnection wire 12.
The second described PIN diode B includes successively side by side that connected 4th monocrystalline silicon thin film 6, the 5th monocrystal silicon are thin
Film 7 and the 6th monocrystalline silicon thin film 8, wherein, the 4th described monocrystalline silicon thin film 6 is p-type doped region and passes through metal interconnection wire 12
Connect the first PIN diode A and outfan 10 respectively, described 7 undoped region of the 5th monocrystalline silicon thin film, described the 6th monocrystalline
Silicon thin film 8 is n-type doping area and connects earth terminal 11 by metal interconnection wire 12.
A kind of equivalent circuit of fexible film radio-frequency (RF) switch of the present invention is as shown in Figure 3.
Claims (5)
1. a kind of fexible film radio-frequency (RF) switch, including substrate (1), it is characterised in that described substrate (1) is flexible substrate, institute
State and SU8 adhesive layer (2) on substrate (1), is provided with, be respectively arranged with above SU8 adhesive layer (2)：First PIN diode
(A), the second PIN diode (B), input (9), outfan (10) and earth terminal (11), wherein, first PIN diode
(A) one end is by the described input (9) of metal interconnection wire connection, and the other end of the first PIN diode (A) is by gold
Category interconnection line connects one end of outfan (10) and the second PIN diode (B) respectively, and the second PIN diode (B's) is another
End connects earth terminal (11) by metal interconnection wire (12).
2. a kind of fexible film radio-frequency (RF) switch according to claim 1, it is characterised in that the first described PIN diode
(A) connected first monocrystalline silicon thin film (3), the second monocrystalline silicon thin film (4) and the 3rd monocrystalline silicon thin film side by side successively are included
(5), wherein, described the first monocrystalline silicon thin film (3) is p-type doped region and connects input (9) by metal interconnection wire (12),
Described the second monocrystalline silicon thin film (4) undoped region, the 3rd described monocrystalline silicon thin film (5) is n-type doping area and passes through metal
Interconnection line (12) connects outfan (10) and the second PIN diode (B) respectively.
3. a kind of fexible film radio-frequency (RF) switch according to claim 1, it is characterised in that the second described PIN diode
(B) connected 4th monocrystalline silicon thin film (6), the 5th monocrystalline silicon thin film (7) and the 6th monocrystalline silicon thin film side by side successively are included
(8), wherein, the 4th described monocrystalline silicon thin film (6) is p-type doped region and connects first respectively by metal interconnection wire (12)
PIN diode (A) and outfan (10), described the 5th monocrystalline silicon thin film (7) undoped region, described the 6th monocrystalline silicon thin film
(8) for n-type doping area and by metal interconnection wire (12) connection earth terminal (11).
4. a kind of fexible film radio-frequency (RF) switch according to claim 1, it is characterised in that described flexible substrate (1) is
PET or PEN plastics or PI plastics.
5. a kind of fexible film radio-frequency (RF) switch according to claim 1, it is characterised in that described metal interconnection wire (12)
It is to be constituted by titanium and gold metal layer are folded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611047627.8A CN106452408A (en) | 2016-11-23 | 2016-11-23 | Flexible thin film radio frequency switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611047627.8A CN106452408A (en) | 2016-11-23 | 2016-11-23 | Flexible thin film radio frequency switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106452408A true CN106452408A (en) | 2017-02-22 |
Family
ID=58219321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611047627.8A Pending CN106452408A (en) | 2016-11-23 | 2016-11-23 | Flexible thin film radio frequency switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106452408A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571277A (en) * | 2019-08-23 | 2019-12-13 | 天津大学 | Flexible indium zinc oxide thin film transistor and preparation method thereof |
| CN110911497A (en) * | 2019-11-20 | 2020-03-24 | 天津大学 | Flexible indium gallium oxide thin film transistor and manufacturing method thereof |
| CN110931567A (en) * | 2019-11-20 | 2020-03-27 | 天津大学 | Flexible zinc magnesium oxide thin film transistor and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203811124U (en) * | 2014-03-12 | 2014-09-03 | 徐州集光电子科技有限公司 | Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor |
-
2016
- 2016-11-23 CN CN201611047627.8A patent/CN106452408A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203811124U (en) * | 2014-03-12 | 2014-09-03 | 徐州集光电子科技有限公司 | Flexible radio frequency monocrystalline silicon thin film bidirectional dynamic strain sensor |
Non-Patent Citations (1)
| Title |
|---|
| 徐艳蒙;秦国轩;: "柔性螺旋电感的射频特性分析及建模表征", 电子测量技术, no. 06, pages 5 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110571277A (en) * | 2019-08-23 | 2019-12-13 | 天津大学 | Flexible indium zinc oxide thin film transistor and preparation method thereof |
| CN110911497A (en) * | 2019-11-20 | 2020-03-24 | 天津大学 | Flexible indium gallium oxide thin film transistor and manufacturing method thereof |
| CN110931567A (en) * | 2019-11-20 | 2020-03-27 | 天津大学 | Flexible zinc magnesium oxide thin film transistor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106452408A (en) | Flexible thin film radio frequency switch | |
| CN102104363B (en) | Tera-hertz silica-based quadrupler and frequency multiplier | |
| Zhang et al. | Fast flexible electronics using transferrable silicon nanomembranes | |
| CN105281689B (en) | Hybrid power amplifier comprising heterojunction bipolar transistors (hbts) and complementary metal oxide semiconductor (cmos) devices | |
| US9312221B2 (en) | Variable capacitance devices | |
| EP2654001A3 (en) | RFID circuit and method | |
| Chasin et al. | An integrated a-IGZO UHF energy harvester for passive RFID tags | |
| CN106449764A (en) | Flexible thin-film bottom-gate dual-channel transistor | |
| CN103986449A (en) | Body-biased switching device | |
| ATE469402T1 (en) | RFID LABEL WITH FOLDED DIPOL | |
| CN105793795A (en) | Display module and system applications | |
| CN106463533A (en) | Monolithic integration of high voltage transistors & low voltage non-planar transistors | |
| CN104517957B (en) | Static discharge (ESD) circuit | |
| US8279020B2 (en) | Units for analog signal processing | |
| Meister et al. | Flexible electronics for wireless communication: A technology and circuit design review with an application example | |
| CN102034801B (en) | Semiconductor package structure | |
| CN104810406A (en) | Silicon-on-insulator radio frequency switching device structure | |
| CN103384139A (en) | Mixer circuit with bias voltage | |
| CN109545797B (en) | Flexible two-input NOR gate circuit based on flexible substrate | |
| Ishida et al. | 3–5 V, 3–3.8 MHz OOK modulator with a-IGZO TFTs for flexible wireless transmitter | |
| RU2016137645A (en) | REMOTE KEYCHAIN DUE TO ELECTRIC COMMUNICATION BETWEEN HAND AND ANTENNA | |
| CN205039152U (en) | TVS device based on CMOS technology | |
| Cho et al. | Oxide thin film transistor circuits for transparent RFID applications | |
| CN205545156U (en) | Face down chip power amplifier of high yield and mobile terminal thereof | |
| CN205028073U (en) | Electronic equipment with radio frequency function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170222 |