CN109449078A - A kind of particle minimizing technology suitable for copper wiring technique - Google Patents
A kind of particle minimizing technology suitable for copper wiring technique Download PDFInfo
- Publication number
- CN109449078A CN109449078A CN201811408980.3A CN201811408980A CN109449078A CN 109449078 A CN109449078 A CN 109449078A CN 201811408980 A CN201811408980 A CN 201811408980A CN 109449078 A CN109449078 A CN 109449078A
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- China
- Prior art keywords
- double
- current device
- nitrogen
- cleaned
- copper wiring
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
Abstract
The invention discloses a kind of particle minimizing technologies suitable for copper wiring technique, include the following steps: step S1, and the double-current device for being used for cleaning silicon chip surface particles is placed in the top position of silicon wafer to be cleaned；Step S2 is mixed to form mixed solvent in double-current device and mixed solvent is injected on silicon wafer to be cleaned eventually by the jet port of double-current device to the first input port of double-current device and the second input port input nitrogen and organic solvent, nitrogen and organic solvent respectively；Step S3, by mixed solvent injection at the different location of silicon chip surface to be cleaned, until completing cleaning process；Step S4, stop inputting organic solvent to double-current device, only nitrogen is inputted to double-current device, jet port of the nitrogen through double-current device purges silicon chip surface to be cleaned clean, the present invention not only increases Wafer Cleaning effect, and solves and be easy to corrode the defect of metal in integrated circuit fabrication in the prior art using silicon chip surface particle cleaning method.
Description
Technical field
The present invention relates to integrated electronic technical field more particularly to a kind of copper-connection works suitable for IC manufacturing
Particle minimizing technology in skill.
Background technique
In the copper wiring technique of IC manufacturing, the particle minimizing technology generallyd use is, by nitrogen and deionization
Water is mixed to form mixing drop, and by common spraying equipment will mix drop be ejected into higher jet velocity it is to be cleaned
Silicon wafer on, little particle present on silicon wafer to be cleaned mixing drop high-speed impact under fall off, to reach removal silicon wafer
The effect of surface particles.
But if the metals such as exposed copper are needed, since the metals such as copper are easily rotten under water environment in logical interconnection process
Erosion, so at this time just cleaning silicon chip can not be removed using the mixture that nitrogen commonly used in the prior art and deionized water are mixed to form
Surface particles.
Summary of the invention
In view of above-mentioned technical problem, have being applicable in for preferable cleaning effect the purpose of the present invention is to provide a kind of
In the particle minimizing technology of copper wiring technique, to solve the above technical problems.
The present invention solves its technical problem and adopts the technical scheme that, provides a kind of particle minimizing technology, is suitable for integrated
In the copper wiring technique of circuit manufacture, the particle minimizing technology specifically comprises the following steps:
The double-current device for being used for cleaning silicon chip surface particles is placed in the top position of silicon wafer to be cleaned by step S1；
Step S2 inputs nitrogen to the first input port of the double-current device, and simultaneously to the second of the double-current device
Input port inputs organic solvent,
The nitrogen and the organic solvent are mixed to form mixed solvent eventually by described double in the double-current device
The mixed solvent is injected on the silicon wafer to be cleaned by the jet port of stream device；
Step S3 moves back and forth the jet port of the double-current device, so that the jet port of the double fluid device
By mixed solvent injection at the different location of the silicon chip surface to be cleaned, until completing cleaning process；
Step S4, second input port stopped into the double-current device inputs the organic solvent, only to described
Double-current device inputs the nitrogen, and the nitrogen blows the silicon chip surface to be cleaned through the jet port of the double-current device
It sweeps clean.
As a preferred solution of the present invention, the organic solvent includes isopropanol.
As a preferred solution of the present invention, the isopropanol input the input flow rate of the double-current device be 10~
500ml/min。
As a preferred solution of the present invention, the input flow rate of the nitrogen is 10~120L/min.
As a preferred solution of the present invention, the mixing ejected in the jet port of the double-current device is molten
The droplet size of agent is 10~120um.
As a preferred solution of the present invention, in the step S2, the jet port of the double fluid device sprays institute
The jet velocity for stating mixed solvent is 20~100m/s.
Compared with prior art, the invention has the advantages that using organic solvent, such as isopropanol etc., it is mixed with nitrogen
Conjunction forms droplet particles, and by the jet velocity of the size of control droplet particles and droplet particles, droplet particles are acted on
On silicon wafer to be cleaned, the cleaning effect to silicon wafer is improved, simultaneously because the volatile that isopropanol itself has, it can't
Corrode the metals such as copper, the method for solving the deionized water used in the prior art and nitrogen mixture cleaning silicon chip particle is easy
Corrode the defect of exposed metal in integrated circuit fabrication.
Detailed description of the invention
Fig. 1 is double-current device described in the particle minimizing technology provided in an embodiment of the present invention suitable for copper wiring technique
Structural schematic diagram；
Fig. 2 is using double fluid described in the particle minimizing technology provided in an embodiment of the present invention suitable for copper wiring technique
Device carries out the schematic diagram of particle removal to silicon face；
Fig. 3 is using double fluid described in the particle minimizing technology provided in an embodiment of the present invention suitable for copper wiring technique
Device is to the withering schematic diagram of silicon face；
The step of Fig. 4 is the particle minimizing technology provided in an embodiment of the present invention suitable for copper wiring technique figure.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art without creative labor it is obtained it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The present invention will be further explained below with reference to the attached drawings and specific examples, but not as the limitation of the invention.
Particle minimizing technology provided in an embodiment of the present invention suitable for copper wiring technique, referring to figure 4., specifically include as
Lower step:
The double-current device 100 for being used for cleaning silicon chip surface particles is placed in silicon wafer 200 to be cleaned referring to figure 2. by step S1
Top position；
Step S2, referring to Fig.1 and 2, input nitrogen to the first input port 1 of the double-current device 100, and simultaneously to
Second input port 2 of the double fluid device 100 inputs organic solvent,
The nitrogen and the organic solvent are mixed to form mixed solvent eventually by described in the double-current device 100
The mixed solvent is injected on the silicon wafer to be cleaned 200 by the jet port 3 of double-current device 100；
In order to enhance the cleaning effect to the silicon wafer 200 to be cleaned, the organic solvent preferably uses isopropanol, also
It is to say, the mixed solvent is preferably the mixture of nitrogen and isopropanol.Certainly according to actual needs, it also can be used
The organic solvent or inorganic solvent of his type.
Step S3 moves back and forth the jet port 3 of the double-current device 100, so that the double fluid device 100 is described
Jet port 3 sprays the mixed solvent at the different location on 100 surface of silicon wafer to be cleaned, until completing to clean
Journey；
Step S4, referring to figure 3., stop second input port 2 into the double-current device 100 input it is described organic
Solvent, only inputs the nitrogen to the double-current device 100, and the nitrogen will through the jet port 3 of the double-current device 100
200 surface of the silicon wafer to be cleaned purging is clean.
In order to ensure the mixed solvent has preferable cleaning effect, the isopropanol input double-current device 100
Input flow rate be preferably 10~500ml/min；The input flow rate of the nitrogen is preferably 10~120L/min.
In order to ensure cleaning effect, it is preferable that described in being ejected in the jet port 3 of the double-current device 100
The droplet size of mixed solvent controls between 10~120um；The jet port 3 of the double-current device 100 is sprayed described
The jet velocity of mixed solvent controls between 20~100m/s.
In conclusion the present invention is mixed to form droplet particles with nitrogen, and lead to using organic solvent, such as isopropanol etc.
The size of control droplet particles and the jet velocity of droplet particles are crossed, droplet particles are acted on silicon wafer 200 to be cleaned, not only
Has cleaning effect well, simultaneously because the volatile that isopropanol itself has, can't corrode the metals such as copper, solve
The method of the deionized water and nitrogen mixture cleaning silicon chip particle that use in the prior art is easy rotten in integrated circuit fabrication
Lose the defect of exposed metal.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (6)
1. a kind of particle minimizing technology suitable for copper wiring technique, which comprises the steps of:
The double-current device for being used for cleaning silicon chip surface particles is placed in the top position of silicon wafer to be cleaned by step S1；
Step S2 inputs nitrogen to the first input port of the double-current device, and the second input to the double-current device simultaneously
Mouth input organic solvent,
The nitrogen and the organic solvent are mixed to form mixed solvent in the double-current device and fill eventually by the double fluid
The mixed solvent is injected on the silicon wafer to be cleaned by the jet port set；
Step S3 moves back and forth the jet port of the double-current device, so that the jet port of the double fluid device is by institute
Mixed solvent injection is stated at the different location of the silicon chip surface to be cleaned, until completing cleaning process；
Step S4, second input port stopped into the double-current device inputs the organic solvent, only to the double fluid
Device inputs the nitrogen, and the jet port of the nitrogen through the double-current device purges the silicon chip surface to be cleaned dry
Only.
2. being suitable for the particle minimizing technology of copper wiring technique as described in claim 1, which is characterized in that the organic solvent
Including isopropanol.
3. being suitable for the particle minimizing technology of copper wiring technique as claimed in claim 2, which is characterized in that the isopropanol is defeated
The input flow rate for entering the double-current device is 10~500ml/min.
4. being suitable for the particle minimizing technology of copper wiring technique as claimed in claim 1 or 2, which is characterized in that the nitrogen
Input flow rate be 10~120L/min.
5. being suitable for the particle minimizing technology of copper wiring technique as claimed in claim 2, which is characterized in that in the double fluid dress
The droplet size for the mixed solvent that the jet port set ejects is 10~120um.
6. being suitable for the particle minimizing technology of copper wiring technique as described in claim 1, which is characterized in that the step S2
In, the jet velocity that the jet port of the double fluid device sprays the mixed solvent is 20~100m/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811408980.3A CN109449078A (en) | 2018-11-23 | 2018-11-23 | A kind of particle minimizing technology suitable for copper wiring technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811408980.3A CN109449078A (en) | 2018-11-23 | 2018-11-23 | A kind of particle minimizing technology suitable for copper wiring technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109449078A true CN109449078A (en) | 2019-03-08 |
Family
ID=65554800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811408980.3A Pending CN109449078A (en) | 2018-11-23 | 2018-11-23 | A kind of particle minimizing technology suitable for copper wiring technique |
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| Country | Link |
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| CN (1) | CN109449078A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030178047A1 (en) * | 2002-03-25 | 2003-09-25 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate cleaning method |
| CN1975585A (en) * | 2005-12-02 | 2007-06-06 | 大日本网目版制造株式会社 | Substrate processing method and substrate processing apparatus |
| JP2007150375A (en) * | 2007-03-19 | 2007-06-14 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP2013179341A (en) * | 2008-03-31 | 2013-09-09 | Toshiba Corp | Semiconductor wafer cleaning method |
| CN105742155A (en) * | 2014-12-26 | 2016-07-06 | 株式会社思可林集团 | Substrate processing method |
-
2018
- 2018-11-23 CN CN201811408980.3A patent/CN109449078A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030178047A1 (en) * | 2002-03-25 | 2003-09-25 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate cleaning method |
| CN1975585A (en) * | 2005-12-02 | 2007-06-06 | 大日本网目版制造株式会社 | Substrate processing method and substrate processing apparatus |
| JP2007150375A (en) * | 2007-03-19 | 2007-06-14 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP2013179341A (en) * | 2008-03-31 | 2013-09-09 | Toshiba Corp | Semiconductor wafer cleaning method |
| CN105742155A (en) * | 2014-12-26 | 2016-07-06 | 株式会社思可林集团 | Substrate processing method |
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Application publication date: 20190308 |
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| RJ01 | Rejection of invention patent application after publication |