CN109412538A - A kind of high-output power radio-frequency power amplifier of stability enhancing - Google Patents

A kind of high-output power radio-frequency power amplifier of stability enhancing Download PDF

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Publication number
CN109412538A
CN109412538A CN201811077908.7A CN201811077908A CN109412538A CN 109412538 A CN109412538 A CN 109412538A CN 201811077908 A CN201811077908 A CN 201811077908A CN 109412538 A CN109412538 A CN 109412538A
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CN
China
Prior art keywords
cmos
cmos transistor
transistor
transistors
cmos transistors
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Application number
CN201811077908.7A
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Chinese (zh)
Inventor
马建国
张蕾
傅海鹏
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Tianjin University
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Tianjin University
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Priority to CN201811077908.7A priority Critical patent/CN109412538A/en
Publication of CN109412538A publication Critical patent/CN109412538A/en
Priority to LU101197A priority patent/LU101197B1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45028—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are folded cascode coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45031—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are compositions of multiple transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45128—Indexing scheme relating to differential amplifiers the folded cascode stage of the folded cascode dif amp contains a reactive element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45148—At least one reactive element being added at the input of a dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45201—Indexing scheme relating to differential amplifiers the differential amplifier contains one or more reactive elements, i.e. capacitive or inductive elements, in the load

Abstract

The invention discloses a kind of high-output power radio-frequency power amplifiers of stability enhancing, including No.1 CMOS transistor, No. two CMOS transistors, No. three CMOS transistors, No. four CMOS transistors, No.1 CMOS transistor and No. three CMOS transistors are in same branch, No. two CMOS transistors and No. four CMOS transistors are in same branch, No.1 CMOS transistor and No. two CMOS transistors are common source configuration, No. three CMOS transistors and No. four CMOS transistors are common gate structure, No.1 cross coupling capacitor is connected between No. three CMOS transistor source electrodes and No. four CMOS transistor drain electrodes, No. two cross coupling capacitors are connected between No. three CMOS transistor drain electrodes and No. four CMOS transistor source electrodes.The present invention can guarantee the stabilization of radio-frequency power amplifier in the case where realizing high output power, do not need additional stabilizing measures, reduce cost.

Description

A kind of high-output power radio-frequency power amplifier of stability enhancing
Technical field
The invention belongs to wireless communication power amplifier technique field more particularly to CMOS complementary metal-oxide-semiconductors (CMOS) radio-frequency power amplifier field, more specifically, it relates to a kind of high-output power radio-frequency powers of stability enhancing Amplifier.
Background technique
Nowadays, the fast development of wireless communication industry has become the maximum bright spot of information industry, is for wireless communication The design requirement of system is also higher and higher.Power amplifier is located at the end of transmitter in wireless communication system, and output power is determined The length of transmitting range is determined, therefore power amplifier is very important a part in communication system.Radio-frequency power amplifier It is widely used in the fields such as satellite communication, radar and various industrial equipments, along with wireless telecommunications and military field new standard The development of new technology, wireless communication system also correspondingly increase the performance requirement of radio-frequency power amplifier.Therefore, people are more Focus be placed on the promotion of the frequency of power amplifier, output power and efficiency in terms of, but with the rising of frequency, function The problems such as output power of rate amplifier is low and parasitic parameter is big increasingly occupies leading position.
At present realize high-output power power amplifier in terms of, frequently with technique be GaAs or GaN technique, but this The shortcomings that kind of technique is that higher cost, production capacity are unstable.For the industry demand for the fast-developing radio-frequency front-end that follows up, the present invention It is lower using cost, be more suitable the more mature CMOS technology of large-scale production, technology.Due to CMOS technology substrate loss Greatly, more and more documents realize bigger gain and high output power using the method for multiple strings of transistors parallel connections, but It is as frequency increases and number of transistors purpose increases, the channel of various parasitic capacitances and Distribution Effect becomes more, is particularly easy to draw It plays the unstable of circuit and vibrates.In the design process, the stability that should fully consider power amplifier, prevents power from putting Big device vibrates.Stabilization is all amplifier premises, is the necessary condition for guaranteeing equipment safety reliability service.In practical application In, it is usually present signal source impedance and load impedance and the unmatched situation of radio frequency amplifier network, reflection is generated, in certain frequencies It may be positive feedback under rate, so as to cause radio frequency amplifier self-excitation, cause equipment damage.Therefore, it realizes under high output power Guarantee that the stabilization of radio-frequency power amplifier is particularly important.
Realize that stable effective way is roughly divided into two kinds: the first is to introduce certain to have consumption device in the power amplifiers Low reactance-resistance ratio drops in part, sacrifices the gain of a part to improve the stability of entire power amplifier, such as the grid in transistor Series resistance etc..Second is to introduce certain negative-feedback, because unstable root is positive feedback, being suitably introduced into negative-feedback can To improve the stability of entire power amplifier, but the bandwidth of operation of entire power amplifier may be reduced.Both are done Method is all that the raising of stability is obtained to sacrifice the performance of radio-frequency power amplifier as cost.
Shown in sum up, in order to solve stability and performance existing for the radio-frequency power amplifier realized based on CMOS technology it Between compromise problem, the parasitism for overcoming the radio-frequency power amplifier based on CMOS technology to introduce when realizing high power causes entirely The unstable problem of circuit just has to the structure for proposing some new radio-frequency power amplifiers, is not reducing circuit performance Under the premise of improve system stability.
Summary of the invention
Purpose of the invention is to overcome the shortcomings in the prior art, provides a kind of high-output power of stability enhancing Radio-frequency power amplifier is a kind of penetrating for cascade of the new circuit structure-based on cross-coupling technique compensation parasitic capacitance The topological structure of frequency power amplifier can guarantee the stabilization of radio-frequency power amplifier in the case where realizing high output power, be not required to Additional stabilizing measures are wanted, cost is reduced.
The purpose of the present invention is what is be achieved through the following technical solutions.
The high-output power radio-frequency power amplifier of stability enhancing of the invention, including No.1 CMOS transistor, No. two CMOS transistor, No. three CMOS transistors, No. four CMOS transistors, No.1 CMOS transistor and No. three CMOS transistors are in same One branch, No. two CMOS transistors and No. four CMOS transistors are in same branch, the No.1 CMOS transistor grid difference It is connected with No.1 input capacitance and No.1 resistance, No. two CMOS transistor grids is connected separately with No. two input blockings Capacitor and No. two resistance, No.1 CMOS transistor and No. two CMOS transistors are common source configuration, the drain electrode of No.1 CMOS transistor Connect No. three CMOS transistor source electrodes, No. two CMOS transistor drain electrode No. four CMOS transistor source electrodes of connection, No. three CMOS crystal Pipe drain electrode is connected separately with No.1 output capacitance and No.1 inductance, No. four CMOS transistors drain electrodes be connected separately with No. two it is defeated Capacitance and No. two inductance out, No. three CMOS transistors and No. four CMOS transistors are common gate structure, No. three CMOS No.1 cross coupling capacitor, No. three CMOS transistors leakage are connected between transistor source and No. four CMOS transistor drain electrodes No. two cross coupling capacitors are connected between pole and No. four CMOS transistor source electrodes.
Compared with prior art, the beneficial effects brought by the technical solution of the present invention are as follows:
Invention realizes that power is put by using the transistor cascode structure based on CMOS technology of difference The high-power output of big device.And it is improved according to the transistor cascode structure to difference, passes through the total grid in difference Two transistors between introduce cross coupling capacitor (i.e. between No. three CMOS transistor source electrodes and the drain electrode of No. four CMOS transistors No.1 cross coupling capacitor is connected, connects No. two intersection couplings between No. three CMOS transistor drain electrodes and No. four CMOS transistor source electrodes Close capacitor), the characteristics of counteracting in combination with the intrinsic common-mode point parasitic parameter of differential configuration, realizing low cost and high output The stability of entire circuit is improved under the requirement of power.
Detailed description of the invention
Fig. 1 is the cascode structure for not using the difference of cross coupling capacitor commonly.
Fig. 2 is cascode structure of the present invention using the difference of cross coupling capacitor.
Appended drawing reference: M1 No.1 CMOS transistor, No. bis- CMOS transistors of M2, No. tri- CMOS transistors of M3, M4 tetra- CMOS transistor, C1 No.1 input capacitance, No. bis- input capacitances of C2, and C3 No.1 exports capacitance, and C4 bis- defeated Capacitance out, C5 AC earth capacitor, VG1No.1 bias supply, VG2No. two bias supplies, VG3No. three bias supplies, VD1One Number voltage source, VD2No. two voltage sources, RG1No.1 resistance, RG2No. two resistance, RG3No. three resistance, L1 No.1 inductance, No. bis- electricity of L2 Sense, CM1No.1 parasitic capacitance, CM2No. two parasitic capacitances, CS1No.1 cross coupling capacitor, CS2No. two cross coupling capacitors, GND Ground, AINFirst via signal input port, AOUTFirst via signal output port, BINSecond road signal input port, BOUTSecond tunnel Signal output port.
Specific embodiment
The present invention realizes the radio-frequency power amplifier of high-output power because of parasitic parameter to overcome based on CMOS technology Caused circuit is unstable, proposes to introduce between two transistors of the total grid of the circuit of the cascade of difference and intersects coupling Close capacitor.Illustrate technical solution of the present invention in order to clearer, the present invention will be further explained below with reference to the attached drawings.
Fig. 1 is the cascode structure of conventional differential, wherein a routing No.1 CMOS transistor M1 and No. three CMOS crystal Pipe M3 composition, another way are made of No. two CMOS transistor M2 and No. four CMOS transistor M4.Wherein, No.1 CMOS transistor M1 It is common source configuration, No.1 bias supply V with No. two CMOS transistor M2G1With No.1 resistance RG1, No. two bias supply VG2With two Number resistance RG2Respectively No.1 CMOS transistor M1 and No. two CMOS transistor M2 provide gate bias.No. three CMOS transistor M3 It is common gate structure, No. three bias supply V with No. four CMOS transistor M4G3With No. three resistance RG3It is simultaneously No. three CMOS crystal Pipe M3 and No. four CMOS transistor M4 provide gate bias.No.1 inductance L1, No. two inductance L2 and No.1 voltage source VD1, No. two electricity Potential source VD2Group be combined into the cascode structure of entire difference and be powered biasing.In No. three CMOS transistor M3 of total grid and four Number CMOS transistor M4 is respectively present No.1 parasitic capacitance CM1With No. two parasitic capacitance CM1, it is not the component in circuit. The presence of the two parasitic capacitances becomes unstable for will lead to traditional cascode structure, although the parasitic capacitance of this part The counteracting of part can be carried out by difference common-source amplifier, but not exclusively, it can only partial offset.Therefore, the present invention is total in difference No.1 cross coupling capacitor C is introduced between two transistors of gridS1With No. two cross coupling capacitor CS2。
As shown in Fig. 2, the high-output power radio-frequency power amplifier that stability of the invention enhances, including No.1 CMOS are brilliant Body pipe M1, No. two CMOS transistor M2, No. three CMOS transistor M3, No. four CMOS transistor M4, No.1 CMOS transistor M1 and No. three CMOS transistor M3 are in same branch, and No. two CMOS transistor M2 and No. four CMOS transistor M4 are in same branch. The No.1 CMOS transistor M1 grid is connected separately with No.1 input capacitance C1 and No.1 resistance RG1, wherein No.1 is defeated Enter the one end capacitance C1 to connect with No.1 CMOS transistor M1 grid, the other end and first via signal input port AINConnection； No.1 resistance RG1One end is connect with No.1 CMOS transistor M1 grid, the other end and No.1 bias supply VG1Connection.Described No. two CMOS transistor M2 grid is connected separately with No. two input capacitance C2 and No. two resistance RG2, wherein No. two input blocking electricity Hold the one end C2 to connect with No. two CMOS transistor M2 grids, the other end and second road signal input port BINConnection；No. two resistance RG2One end is connect with No. two CMOS transistor M2 grids, the other end and No. two bias supply VG2Connection.
The No.1 CMOS transistor M1 and No. two CMOS transistor M2 is common source configuration, it is, No.1 CMOS is brilliant The source electrode of body pipe M1 and No. two CMOS transistor M2 are grounded GND jointly.No.1 CMOS transistor M1 drain electrode connection three CMOS transistor M3 source electrode, No. two CMOS transistor M2 drain electrode No. four CMOS transistor M4 source electrodes of connection.No. three CMOS crystalline substances Body pipe M3 and No. four CMOS transistor M4 is common gate structure, the grid of No. three CMOS transistor M3 and No. four CMOS transistor M4 It is connected separately with AC earth capacitor C5 and No. three resistance R jointlyG3, AC earth one end capacitor C5 and No. three CMOS transistor M3 Grid connection, the other end are grounded GND；No. three resistance RG3One end is connect with No. three CMOS transistor M3 grids, the other end and No. three Bias supply VG3Connection.
No. three CMOS transistor M3 drain electrode is connected separately with No.1 output capacitance C3 and No.1 inductance L1, In, No.1 exports the one end capacitance C3 and connects with No. three CMOS transistor M3 drain electrodes, the other end and first via signal output end Mouth AOUTConnection；No.1 one end inductance L1 is connected with No. three CMOS transistor M3 drain electrodes, the other end and No.1 voltage source VD1Connection. No. four CMOS transistor M4 drain electrode is connected separately with No. two output capacitance C4 and No. two inductance L2, wherein No. two defeated The one end capacitance C4 drains with No. four CMOS transistor M4 out, the other end and second road signal output port BOUTConnection；No. two The one end inductance L2 is connected with No. four CMOS transistor M4 drain electrodes, the other end and No. two voltage source VD2Connection.No. three CMOS crystalline substances No.1 cross coupling capacitor C is connected between body pipe M3 source electrode and No. four CMOS transistor M4 drain electrodesS1, No. three CMOS crystal No. two cross coupling capacitor C are connected between pipe M3 drain electrode and No. four CMOS transistor M4 source electrodesS2, it is not completely counterbalanced by for compensating Parasitic capacitance, thus to realizing that the stability of cascode structure of high-power output is further improved.
The present invention utilizes the arranged in series form of transistor, uses the CMOS transistor cascode structure of difference.In difference Separation structure all the way in the source electrode of field effect transistor is attached with drain electrode, thus by the optimal load of integrated circuit structure Impedance increases.In transistor cascode structure, transistor gate capacitance and the external capacitor of grid are for adjusting stacked structure Drain voltage phase, guarantee that the phase of the drain voltage of each transistor is consistent, realize high-output power.Using the knot of difference Structure can be in the partial offset of common-mode point realization parasitic parameter.Meanwhile it introducing and intersecting between two transistors that difference is total to grid Coupled capacitor reduces because miller capacitance not exclusively offsets caused unstable factor, improves the stability of entire circuit.
Although function and the course of work of the invention are described above in conjunction with attached drawing, the invention is not limited to Above-mentioned concrete function and the course of work, the above mentioned embodiment is only schematical, rather than restrictive, ability The those of ordinary skill in domain under the inspiration of the present invention, is not departing from present inventive concept and scope of the claimed protection situation Under, many forms can also be made, all of these belong to the protection of the present invention.

Claims (1)

1. a kind of high-output power radio-frequency power amplifier of stability enhancing, including No.1 CMOS transistor (M1), No. two CMOS transistor (M2), No. three CMOS transistors (M3), No. four CMOS transistors (M4), No.1 CMOS transistor (M1) and No. three CMOS transistor (M3) is in same branch, and No. two CMOS transistors (M2) and No. four CMOS transistors (M4) are in same branch Road, No.1 CMOS transistor (M1) grid are connected separately with No.1 input capacitance (C1) and No.1 resistance (RG1), institute It states No. two CMOS transistor (M2) grids and is connected separately with No. two input capacitances (C2) and No. two resistance (RG2), No.1 CMOS Transistor (M1) and No. two CMOS transistors (M2) are common source configuration, No. three CMOS of No.1 CMOS transistor (M1) drain electrode connection Transistor (M3) source electrode, No. two CMOS transistor (M2) drain electrode No. four CMOS transistor (M4) source electrodes of connection, No. three CMOS crystal Pipe (M3) drain electrode is connected separately with No.1 output capacitance (C3) and No.1 inductance (L1), No. four CMOS transistor (M4) drain electrodes It is connected separately with No. two output capacitances (C4) and No. two inductance (L2), No. three CMOS transistors (M3) and No. four CMOS crystal Managing (M4) is common gate structure, which is characterized in that
No.1 cross-coupling is connected between No. three CMOS transistors (M3) source electrode and No. four CMOS transistor (M4) drain electrodes Capacitor (CS1), No. two intersections are connected between No. three CMOS transistors (M3) drain electrode and No. four CMOS transistor (M4) source electrodes Coupled capacitor (CS2)。
CN201811077908.7A 2018-09-16 2018-09-16 A kind of high-output power radio-frequency power amplifier of stability enhancing Pending CN109412538A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201811077908.7A CN109412538A (en) 2018-09-16 2018-09-16 A kind of high-output power radio-frequency power amplifier of stability enhancing
LU101197A LU101197B1 (en) 2018-09-16 2019-04-30 A high-output-power RF power amplifier with enhanced stability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811077908.7A CN109412538A (en) 2018-09-16 2018-09-16 A kind of high-output power radio-frequency power amplifier of stability enhancing

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105281678A (en) * 2014-05-27 2016-01-27 安华高科技通用Ip(新加坡)公司 Neutralization of parasitic capacitance using MOS device
US9621110B1 (en) * 2014-11-03 2017-04-11 Acco Capacitive cross-coupling and harmonic rejection

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105281678A (en) * 2014-05-27 2016-01-27 安华高科技通用Ip(新加坡)公司 Neutralization of parasitic capacitance using MOS device
US9621110B1 (en) * 2014-11-03 2017-04-11 Acco Capacitive cross-coupling and harmonic rejection

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HONG GUL HAN: "A 2.88 mW + 9.06 dBm IIP3 Common-Gate LNA With Dual Cross-Coupled Capacitive Feedback", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 》 *

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