CN109401631A - 用于铜和硅通孔（tsv）应用的化学机械平面化（cmp）组合物及其方法 - Google Patents

用于铜和硅通孔（tsv）应用的化学机械平面化（cmp）组合物及其方法 Download PDF

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Publication number
CN109401631A
CN109401631A CN201810940445.6A CN201810940445A CN109401631A CN 109401631 A CN109401631 A CN 109401631A CN 201810940445 A CN201810940445 A CN 201810940445A CN 109401631 A CN109401631 A CN 109401631A
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CN
China
Prior art keywords
weight
chemical mechanical
composition
copper
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810940445.6A
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English (en)
Chinese (zh)
Inventor
史晓波
L·M·马兹
C·K-Y·李
M-S·蔡
P·C·潘
C·C-T·谢
R-J·杨
B·J·卢
M·L·奥尼尔
A·德雷克斯凯-科瓦奇
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Versum Materials US LLC
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Versum Materials US LLC
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Filing date
Publication date
Application filed by Versum Materials US LLC filed Critical Versum Materials US LLC
Publication of CN109401631A publication Critical patent/CN109401631A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201810940445.6A 2017-08-17 2018-08-17 用于铜和硅通孔（tsv）应用的化学机械平面化（cmp）组合物及其方法 Pending CN109401631A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762546914P 2017-08-17 2017-08-17
US62/546,914 2017-08-17
US16/101,869 US11401441B2 (en) 2017-08-17 2018-08-13 Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US16/101,869 2018-08-13

Publications (1)

Publication Number Publication Date
CN109401631A true CN109401631A (zh) 2019-03-01

Family

ID=63311834

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810940445.6A Pending CN109401631A (zh) 2017-08-17 2018-08-17 用于铜和硅通孔（tsv）应用的化学机械平面化（cmp）组合物及其方法

Country Status (8)

Country Link
US (1) US11401441B2 (https=)
EP (1) EP3444309B1 (https=)
JP (2) JP6995716B2 (https=)
KR (2) KR102323303B1 (https=)
CN (1) CN109401631A (https=)
IL (1) IL261161B2 (https=)
SG (1) SG10201806977YA (https=)
TW (2) TWI678402B (https=)

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CN113789127A (zh) * 2021-10-20 2021-12-14 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
CN114466909A (zh) * 2019-09-30 2022-05-10 弗萨姆材料美国有限责任公司 低凹陷铜化学机械平面化
CN116249754A (zh) * 2020-07-29 2023-06-09 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术
CN116438267A (zh) * 2020-10-29 2023-07-14 富士胶片电子材料美国有限公司 研磨组成物及其使用方法
CN116745375A (zh) * 2020-12-14 2023-09-12 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)

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US20200277514A1 (en) * 2019-02-28 2020-09-03 Versum Materials Us, Llc Chemical Mechanical Polishing For Copper And Through Silicon Via Applications
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
JP7596928B2 (ja) * 2021-05-24 2024-12-10 信越化学工業株式会社 研磨用組成物
KR102867479B1 (ko) * 2022-09-06 2025-10-14 한국전자기술연구원 선택적 연마특성이 향상된 실리콘관통전극의 구리 연마용 슬러리 조성물
WO2025111136A1 (en) 2023-11-21 2025-05-30 Versum Materials Us, Llc Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025111138A1 (en) 2023-11-22 2025-05-30 Versum Materials Us, Llc Biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025122389A1 (en) 2023-12-07 2025-06-12 Versum Materials Us, Llc Chemical additives for chemical mechanical planarization (cmp) polishing compositions
TW202546158A (zh) 2024-02-16 2025-12-01 美商慧盛材料美國責任有限公司 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114466909A (zh) * 2019-09-30 2022-05-10 弗萨姆材料美国有限责任公司 低凹陷铜化学机械平面化
CN116249754A (zh) * 2020-07-29 2023-06-09 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术
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CN116745375A (zh) * 2020-12-14 2023-09-12 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)
CN113789127A (zh) * 2021-10-20 2021-12-14 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液

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Publication number Publication date
EP3444309B1 (en) 2025-07-16
IL261161B2 (en) 2024-03-01
SG10201806977YA (en) 2019-03-28
TWI678402B (zh) 2019-12-01
IL261161A (en) 2019-01-31
EP3444309A1 (en) 2019-02-20
US20190055430A1 (en) 2019-02-21
KR102323303B1 (ko) 2021-11-08
JP2019052295A (ja) 2019-04-04
IL261161B1 (en) 2023-11-01
KR20190019875A (ko) 2019-02-27
KR20200125564A (ko) 2020-11-04
TW201920533A (zh) 2019-06-01
TW202003732A (zh) 2020-01-16
JP2020164877A (ja) 2020-10-08
JP6995716B2 (ja) 2022-01-17
US11401441B2 (en) 2022-08-02

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