JP6995716B2 - 銅及びシリカ貫通電極（ｔｓｖ）用途のための化学機械平坦化（ｃｍｐ）組成物並びにその方法 - Google Patents

銅及びシリカ貫通電極（ｔｓｖ）用途のための化学機械平坦化（ｃｍｐ）組成物並びにその方法 Download PDF

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JP6995716B2
JP6995716B2 JP2018153625A JP2018153625A JP6995716B2 JP 6995716 B2 JP6995716 B2 JP 6995716B2 JP 2018153625 A JP2018153625 A JP 2018153625A JP 2018153625 A JP2018153625 A JP 2018153625A JP 6995716 B2 JP6995716 B2 JP 6995716B2
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chemical mechanical
amino acid
mechanical polishing
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JP2019052295A (ja
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シー シアオボー
エム．マッツ ローラ
ケ－ユアン リー クリス
ツァイ ミン－シー
チァ パン パオ
チャン－ツォ シェ チャド
ヤン ルン－チェ
ジェイ．ルー ブレイク
レオナルド オニール マーク
デレクスキー－コバックス アグネス
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バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2018153625A 2017-08-17 2018-08-17 銅及びシリカ貫通電極（ｔｓｖ）用途のための化学機械平坦化（ｃｍｐ）組成物並びにその方法 Active JP6995716B2 (ja)

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US201762546914P 2017-08-17 2017-08-17
US62/546,914 2017-08-17
US16/101,869 US11401441B2 (en) 2017-08-17 2018-08-13 Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US16/101,869 2018-08-13

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JP2020107244A Withdrawn JP2020164877A (ja) 2017-08-17 2020-06-22 銅及びシリカ貫通電極（ｔｓｖ）用途のための化学機械平坦化（ｃｍｐ）組成物並びにその方法

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US (1) US11401441B2 (https=)
EP (1) EP3444309B1 (https=)
JP (2) JP6995716B2 (https=)
KR (2) KR102323303B1 (https=)
CN (1) CN109401631A (https=)
IL (1) IL261161B2 (https=)
SG (1) SG10201806977YA (https=)
TW (2) TWI678402B (https=)

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JP7817256B2 (ja) 2020-10-29 2026-02-18 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 研磨組成物及びその使用方法
EP4259736A4 (en) * 2020-12-14 2024-11-20 Versum Materials US, LLC Chemical mechanical planarization (cmp) for copper and through-silicon via (tsv)
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
JP7596928B2 (ja) * 2021-05-24 2024-12-10 信越化学工業株式会社 研磨用組成物
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TW202546158A (zh) 2024-02-16 2025-12-01 美商慧盛材料美國責任有限公司 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑

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EP3444309B1 (en) 2025-07-16
IL261161B2 (en) 2024-03-01
SG10201806977YA (en) 2019-03-28
TWI678402B (zh) 2019-12-01
IL261161A (en) 2019-01-31
EP3444309A1 (en) 2019-02-20
US20190055430A1 (en) 2019-02-21
KR102323303B1 (ko) 2021-11-08
JP2019052295A (ja) 2019-04-04
IL261161B1 (en) 2023-11-01
KR20190019875A (ko) 2019-02-27
KR20200125564A (ko) 2020-11-04
TW201920533A (zh) 2019-06-01
TW202003732A (zh) 2020-01-16
JP2020164877A (ja) 2020-10-08
CN109401631A (zh) 2019-03-01
US11401441B2 (en) 2022-08-02

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