CN109360593B - 感测放大装置 - Google Patents
感测放大装置 Download PDFInfo
- Publication number
- CN109360593B CN109360593B CN201811591518.1A CN201811591518A CN109360593B CN 109360593 B CN109360593 B CN 109360593B CN 201811591518 A CN201811591518 A CN 201811591518A CN 109360593 B CN109360593 B CN 109360593B
- Authority
- CN
- China
- Prior art keywords
- sense amplifier
- terminal
- switch
- memory
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0045—Read using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811591518.1A CN109360593B (zh) | 2018-12-25 | 2018-12-25 | 感测放大装置 |
US16/361,199 US10679681B1 (en) | 2018-12-25 | 2019-03-21 | Sensing-amplifying device |
US16/820,686 US20200219543A1 (en) | 2018-12-25 | 2020-03-16 | Sensing-amplifying device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811591518.1A CN109360593B (zh) | 2018-12-25 | 2018-12-25 | 感测放大装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109360593A CN109360593A (zh) | 2019-02-19 |
CN109360593B true CN109360593B (zh) | 2023-09-22 |
Family
ID=65329370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811591518.1A Active CN109360593B (zh) | 2018-12-25 | 2018-12-25 | 感测放大装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US10679681B1 (zh) |
CN (1) | CN109360593B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10872644B2 (en) | 2018-07-13 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Boost bypass circuitry in a memory storage device |
US11056208B1 (en) * | 2020-02-26 | 2021-07-06 | Globalfoundries U.S. Inc. | Data dependent sense amplifier with symmetric margining |
US11710519B2 (en) * | 2021-07-06 | 2023-07-25 | Macronix International Co., Ltd. | High density memory with reference memory using grouped cells and corresponding operations |
US20230009065A1 (en) * | 2021-07-06 | 2023-01-12 | Macronix International Co., Ltd. | High density memory with reference cell and corresponding operations |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW564426B (en) * | 2002-07-09 | 2003-12-01 | Macronix Int Co Ltd | Circuit and method of sensing amplifier with adjustable reference terminal bit line load |
TW200719348A (en) * | 2005-11-11 | 2007-05-16 | Ind Tech Res Inst | Load-balnaced apparatus of memory |
TW200805393A (en) * | 2006-07-06 | 2008-01-16 | Ind Tech Res Inst | Multiple state sense amplifier for memory architecture |
CN101178927A (zh) * | 2006-11-06 | 2008-05-14 | 财团法人工业技术研究院 | 应用于存储器的多稳态感测放大器 |
TW201401288A (zh) * | 2012-06-21 | 2014-01-01 | Ememory Technology Inc | 具有參考字元線之快閃記憶體裝置 |
CN104217744A (zh) * | 2013-06-04 | 2014-12-17 | 力旺电子股份有限公司 | 电流感测放大器及其感测方法 |
TW201629964A (zh) * | 2014-09-30 | 2016-08-16 | 台灣積體電路製造股份有限公司 | 記憶體裝置與其控制方法 |
CN107958688A (zh) * | 2016-10-17 | 2018-04-24 | 旺宏电子股份有限公司 | 非易失性存储装置的感测电路及方法 |
CN209103822U (zh) * | 2018-12-25 | 2019-07-12 | 江苏时代全芯存储科技股份有限公司 | 感测放大装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7259982B2 (en) * | 2005-01-05 | 2007-08-21 | Intel Corporation | Reading phase change memories to reduce read disturbs |
US10586832B2 (en) * | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
IT201700114539A1 (it) * | 2017-10-11 | 2019-04-11 | St Microelectronics Srl | Circuito e metodo di lettura con migliorate caratteristiche elettriche per un dispositivo di memoria non volatile |
IT201800000632A1 (it) * | 2018-01-09 | 2019-07-09 | St Microelectronics Srl | Dispositivo per commutare tra diverse modalita' di lettura di una memoria non volatile e metodo di lettura di una memoria non volatile |
US10867653B2 (en) * | 2018-04-20 | 2020-12-15 | Micron Technology, Inc. | Access schemes for protecting stored data in a memory device |
-
2018
- 2018-12-25 CN CN201811591518.1A patent/CN109360593B/zh active Active
-
2019
- 2019-03-21 US US16/361,199 patent/US10679681B1/en active Active
-
2020
- 2020-03-16 US US16/820,686 patent/US20200219543A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW564426B (en) * | 2002-07-09 | 2003-12-01 | Macronix Int Co Ltd | Circuit and method of sensing amplifier with adjustable reference terminal bit line load |
TW200719348A (en) * | 2005-11-11 | 2007-05-16 | Ind Tech Res Inst | Load-balnaced apparatus of memory |
TW200805393A (en) * | 2006-07-06 | 2008-01-16 | Ind Tech Res Inst | Multiple state sense amplifier for memory architecture |
CN101178927A (zh) * | 2006-11-06 | 2008-05-14 | 财团法人工业技术研究院 | 应用于存储器的多稳态感测放大器 |
TW201401288A (zh) * | 2012-06-21 | 2014-01-01 | Ememory Technology Inc | 具有參考字元線之快閃記憶體裝置 |
CN104217744A (zh) * | 2013-06-04 | 2014-12-17 | 力旺电子股份有限公司 | 电流感测放大器及其感测方法 |
TW201629964A (zh) * | 2014-09-30 | 2016-08-16 | 台灣積體電路製造股份有限公司 | 記憶體裝置與其控制方法 |
CN107958688A (zh) * | 2016-10-17 | 2018-04-24 | 旺宏电子股份有限公司 | 非易失性存储装置的感测电路及方法 |
CN209103822U (zh) * | 2018-12-25 | 2019-07-12 | 江苏时代全芯存储科技股份有限公司 | 感测放大装置 |
Also Published As
Publication number | Publication date |
---|---|
US10679681B1 (en) | 2020-06-09 |
US20200219543A1 (en) | 2020-07-09 |
US20200202904A1 (en) | 2020-06-25 |
CN109360593A (zh) | 2019-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109360593B (zh) | 感测放大装置 | |
US7852665B2 (en) | Memory cell with proportional current self-reference sensing | |
US7440314B2 (en) | Toggle-type magnetoresistive random access memory | |
US11869588B2 (en) | Three-state programming of memory cells | |
US8036015B2 (en) | Resistive memory | |
TW201316338A (zh) | 電阻式記憶體裝置、佈局結構與其感測電路 | |
JP5093234B2 (ja) | 磁気ランダムアクセスメモリ | |
JP2020047317A (ja) | 不揮発性記憶装置 | |
TWI623939B (zh) | 記憶體裝置與其控制方法 | |
US11527276B2 (en) | Semiconductor storage device | |
JP4863157B2 (ja) | 半導体記憶装置及び半導体記憶装置の動作方法 | |
JP3853199B2 (ja) | 半導体記憶装置及び半導体記憶装置の読み出し方法 | |
JP5288103B2 (ja) | 磁気ランダムアクセスメモリ及びデータ読み出し方法 | |
US8045367B2 (en) | Phase change memory | |
US11521679B2 (en) | Memory device for canceling sneak current | |
US11495278B2 (en) | Memory device | |
CN209103822U (zh) | 感测放大装置 | |
CN113436663A (zh) | 存储装置 | |
US11823738B2 (en) | Resistive memory apparatus | |
CN109448771B (zh) | 记忆体装置 | |
US20240071489A1 (en) | Cascoded sense amplifiers for self-selecting memory | |
US20200202929A1 (en) | Memory device | |
CN113539317A (zh) | 存储器及存储器的读写方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Applicant after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Applicant after: QUANXIN TECHNOLOGY Co.,Ltd. Address before: 223300 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Applicant before: Jiangsu times all core storage technology Co.,Ltd. Applicant before: QUANXIN TECHNOLOGY Co.,Ltd. |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Applicant after: Beijing times full core storage technology Co.,Ltd. Applicant after: QUANXIN TECHNOLOGY Co.,Ltd. Address before: 223300 No. 601 East Changjiang Road, Huaiyin District, Huaian City, Jiangsu Province Applicant before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Applicant before: QUANXIN TECHNOLOGY Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20221201 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Applicant after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant before: Beijing times full core storage technology Co.,Ltd. Applicant before: QUANXIN TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |