CN1093335C - 一种可补偿由环境温度变化所引起的失真的半导体电路 - Google Patents
一种可补偿由环境温度变化所引起的失真的半导体电路 Download PDFInfo
- Publication number
- CN1093335C CN1093335C CN98125135A CN98125135A CN1093335C CN 1093335 C CN1093335 C CN 1093335C CN 98125135 A CN98125135 A CN 98125135A CN 98125135 A CN98125135 A CN 98125135A CN 1093335 C CN1093335 C CN 1093335C
- Authority
- CN
- China
- Prior art keywords
- temperature
- circuit
- resistance
- thermistor
- ambient temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP326444/97 | 1997-11-27 | ||
JP32644497 | 1997-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1219024A CN1219024A (zh) | 1999-06-09 |
CN1093335C true CN1093335C (zh) | 2002-10-23 |
Family
ID=18187882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98125135A Expired - Fee Related CN1093335C (zh) | 1997-11-27 | 1998-11-26 | 一种可补偿由环境温度变化所引起的失真的半导体电路 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6437634B1 (zh) |
EP (1) | EP0920123B1 (zh) |
KR (1) | KR100330954B1 (zh) |
CN (1) | CN1093335C (zh) |
DE (1) | DE69836308T2 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001026216A1 (en) * | 1999-10-01 | 2001-04-12 | Koninklijke Philips Electronics N.V. | Amplifier |
JP3790704B2 (ja) * | 2001-12-18 | 2006-06-28 | 三菱電機株式会社 | 高周波信号用トランジスタの位相調整回路、及び、半導体集積回路 |
CN100407572C (zh) * | 2004-08-02 | 2008-07-30 | 阎跃军 | 场效应管偏置电路 |
US7443225B2 (en) * | 2006-06-30 | 2008-10-28 | Alpha & Omega Semiconductor, Ltd. | Thermally stable semiconductor power device |
JP4425262B2 (ja) * | 2006-12-07 | 2010-03-03 | 株式会社日立国際電気 | フィードフォワード増幅器 |
CN101345512B (zh) * | 2008-07-08 | 2010-09-29 | 无锡友达电子有限公司 | 利用集电极穿透电流监测功率管结温进行过温保护的方法 |
TW201003356A (en) * | 2008-07-10 | 2010-01-16 | Mobien Corp | Resistor device and circuit using the same |
US9667063B1 (en) * | 2016-02-19 | 2017-05-30 | Wilsun Xu | Harmonic filter for multipulse converter systems |
US10003322B2 (en) * | 2016-10-06 | 2018-06-19 | Psemi Corporation | Temperature compensated digital step attenuator |
CN108287587B (zh) * | 2018-01-16 | 2021-01-26 | 成都京东方光电科技有限公司 | 温度补偿电路及显示装置 |
KR20240085420A (ko) | 2022-12-08 | 2024-06-17 | 한화오션 주식회사 | 전기 배관 내부의 케이블 설치장치 |
CN116526985B (zh) * | 2023-03-13 | 2023-09-01 | 成都天成电科科技有限公司 | 一种温度补偿电路及射频功率放大器芯片 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1098571A (zh) * | 1993-06-14 | 1995-02-08 | 夸尔柯姆股份有限公司 | 具有宽广线性动态范围的温度补偿增益控制放大器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4011518A (en) | 1975-10-28 | 1977-03-08 | The United States Of America As Represented By The Secretary Of The Navy | Microwave GaAs FET amplifier circuit |
US4207538A (en) | 1978-08-29 | 1980-06-10 | Rca Corporation | Temperature compensation circuit |
JPS5564405A (en) | 1978-11-08 | 1980-05-15 | Seiko Instr & Electronics Ltd | Receiver circuit with temperature compensating function |
EP0039215B1 (en) | 1980-04-28 | 1985-08-07 | Fujitsu Limited | Temperature compensating voltage generator circuit |
JPS56153810A (en) | 1980-04-28 | 1981-11-28 | Fujitsu Ltd | Electric circuit having temperature compensating function |
JPS57157606A (en) | 1981-03-24 | 1982-09-29 | Nec Corp | Fet amplifier |
JPS6291008A (ja) | 1985-10-17 | 1987-04-25 | Nec Corp | Fet増幅器 |
DE3612809A1 (de) * | 1986-04-16 | 1987-10-22 | Bosch Gmbh Robert | Schaltungsanordnung zur erzeugung eines von der temperatur nichtlinear abhaengigen ausgangssignals |
US4760285A (en) * | 1987-03-30 | 1988-07-26 | Honeywell Inc. | Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity |
US4853646A (en) | 1988-07-19 | 1989-08-01 | Fairchild Semiconductor Corporation | Temperature compensated bipolar circuits |
US4905056A (en) * | 1988-09-30 | 1990-02-27 | Berndt Dale F | Superlattice precision voltage reference |
FR2641127B1 (zh) * | 1988-12-23 | 1993-12-24 | Thomson Hybrides Microondes | |
JPH03283458A (ja) | 1990-03-30 | 1991-12-13 | Hitachi Ltd | Icの温度補償回路 |
JPH0746082A (ja) * | 1993-07-30 | 1995-02-14 | Nippondenso Co Ltd | フィルタ回路 |
CA2150502A1 (en) * | 1994-08-05 | 1996-02-06 | Michael F. Mattes | Method and apparatus for measuring temperature |
US5742205A (en) | 1995-07-27 | 1998-04-21 | Scientific-Atlanta, Inc. | Field effect transistor cable television line amplifier |
EP0827649A1 (en) * | 1996-03-20 | 1998-03-11 | Koninklijke Philips Electronics N.V. | Predistortion circuit for an analog signal in a video communication network |
-
1998
- 1998-11-19 US US09/195,410 patent/US6437634B1/en not_active Expired - Fee Related
- 1998-11-26 CN CN98125135A patent/CN1093335C/zh not_active Expired - Fee Related
- 1998-11-26 KR KR1019980051009A patent/KR100330954B1/ko not_active IP Right Cessation
- 1998-11-26 DE DE69836308T patent/DE69836308T2/de not_active Expired - Fee Related
- 1998-11-26 EP EP98122434A patent/EP0920123B1/en not_active Expired - Lifetime
-
2000
- 2000-06-12 US US09/592,280 patent/US6278313B1/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1098571A (zh) * | 1993-06-14 | 1995-02-08 | 夸尔柯姆股份有限公司 | 具有宽广线性动态范围的温度补偿增益控制放大器 |
Also Published As
Publication number | Publication date |
---|---|
DE69836308D1 (de) | 2006-12-14 |
EP0920123B1 (en) | 2006-11-02 |
US6278313B1 (en) | 2001-08-21 |
KR100330954B1 (ko) | 2002-06-20 |
CN1219024A (zh) | 1999-06-09 |
KR19990045611A (ko) | 1999-06-25 |
US6437634B1 (en) | 2002-08-20 |
EP0920123A2 (en) | 1999-06-02 |
DE69836308T2 (de) | 2007-06-06 |
EP0920123A3 (en) | 2001-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC COMPUND SEMICONDUCTOR DEVICES CO LTD Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030110 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20030110 Address after: Kanagawa, Japan Patentee after: NEC Compund semiconductor Devices Co., Ltd. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NEC COMPUND SEMICONDUCTOR DEVICES CO LTD Effective date: 20060512 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060512 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Kanagawa, Japan Patentee before: NEC Compund semiconductor Devices Co., Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20021023 Termination date: 20131126 |