CN109326660B - 太阳电池单晶硅基绒面生成工艺 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
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- 239000010703 silicon Substances 0.000 claims abstract description 20
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- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
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- 239000013530 defoamer Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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Abstract
本发明涉及太阳电池制造工艺，公开一种太阳电池单晶硅基绒面生成工艺，该工艺采用以下步骤：首先，单晶硅太阳电池片在生成绒面之前，使用氢氧化钾溶液，去除硅基表面切割损伤层，使硅基表面平整；其次，使用氢氧化钾与双氧水混合溶液，在光滑平整的该硅基上形成二氧化硅氧化层；最后，使用氢氧化钾、山梨酸钾、乙酸钠、消泡剂、表面活性剂混合溶液，在形成氧化层的该硅基上生成致密、均匀的绒面结构。
Description
技术领域
本发明涉及一种太阳电池制造工艺，尤其是涉及一种太阳电池单晶硅基绒面生成工艺。
背景技术
在太阳电池生产流程中，源硅片需要经过清洗制绒去除在切割过程中的表面损伤层，并且形成陷光结构的绒面，增加光在太阳能电池片表面的折射反射次数，增加光的吸收。目前常用的制绒方法为化学腐蚀法。
目前行业内主要使用的是氢氧化钠、抗坏血酸、苯甲酸钠、消泡剂、表面活性剂的疏水性混合溶液进行单晶硅基绒面的生成。使用此类溶液生成的“金字塔”型绒面的塔基大小在4~6微米，且绒面成型率较低。
发明内容
有鉴于此，本发明的目的是解决上述现有技术的不足，提供一种使用新型的混合溶液，改善单晶硅基绒面生成的工艺。
本发明解决上述现有技术的不足所采用的技术方案是：该工艺采用以下步骤：
步骤（1）：单晶硅太阳电池片在生成绒面之前，使用氢氧化钾溶液，去除硅基表面切割损伤层，使硅基表面平整；
步骤（2）：使用氢氧化钾与双氧水混合溶液，在光滑平整的该硅基上形成二氧化硅氧化层；
步骤（3）：使用氢氧化钾、山梨酸钾、乙酸钠、消泡剂、表面活性剂混合溶液，在形成氧化层的该硅基上生成致密、均匀的绒面结构。
特别地，该氢氧化钾溶液的氢氧化钾与纯水的体积比为100:1~1:100，处理时温度为40-90℃，处理时间为10-300s。
特别地，该氢氧化钾与该双氧水的体积比为100:1~1:100，处理温度为40-90℃，处理时间为10-300s。
特别地，该氢氧化钾与该山梨酸钾、该乙酸钠、该消泡剂、该表面活性剂的体积比为100:1:1:1:1~1:100:1:1:1~1:1:100:1:1~1:1:1:100:1~1:1:1:1:100，处理温度为40-180℃，处理时间为100-900s。
相较于现有技术，本发明的太阳电池单晶硅基绒面生成工艺，在生成绒面前，使用氢氧化钾溶液，去除硅基表面切割损伤层，使硅基表面更加平整，利于绒面的生成；利用氢氧化钾与双氧水混合溶液，在光滑平整的硅基上形成二氧化硅氧化层，为之后清水性溶液制造绒面创造吸附条件，使得单晶硅基上能够迅速高效的生成致密的“金字塔”型绒面结构；使用氢氧化钾与山梨酸钾、乙酸钠、消泡剂、表面活性剂的混合溶液生成的绒面，“金字塔”塔基大小在2~4微米，且成型率高，增加了光的吸收。
具体实施方式
以下描述用于揭露本发明以使本领域技术人员能够实现本发明。以下描述中的优选实施例只作为举例，本领域技术人员可以想到其他显而易见的变型。在以下描述中界定的本发明的基本原理可以应用于其他实施方案、变形方案、改进方案、等同方案以及没有背离本发明的精神和范围的其他技术方案。
本发明提供一种太阳单晶硅基绒面生成工艺，该工艺包括如下步骤：
步骤（1）：粗抛工序，单晶硅太阳电池片在生成绒面之前，使用氢氧化钾溶液，去除硅基表面切割损伤层，使硅基表面平整；
步骤（2）：预清洗工序，使用氢氧化钾与双氧水混合溶液，在光滑平整的该硅基上形成二氧化硅氧化层；
步骤（3）：制绒工序，使用氢氧化钾、山梨酸钾、乙酸钠、消泡剂、表面活性剂混合溶液，在形成氧化层的该硅基上生成致密、均匀的“金字塔”型绒面结构。
于上述粗抛工序中，该氢氧化钾溶液的氢氧化钾与纯水的体积比为100:1~1:100，处理时温度为40-90℃，处理时间为10-300s，预清洗工序中，该氢氧化钾与该双氧水的体积比为100:1~1:100，处理温度为40-90℃，处理时间为10-300s，制绒工序中，该氢氧化钾与该山梨酸钾、该乙酸钠、该消泡剂、该表面活性剂的体积比为100:1:1:1:1~1:100:1:1:1~1:1:100:1:1~1:1:1:100:1~1:1:1:1:100，处理温度为40-180℃，处理时间为100-900s。
下面表格所示，分别为较佳实施例中各个工序的配方表：
按照上述配比制得的太阳能电池的电性能如下：
本领域的技术人员应理解，上述描述的本发明的实施例只作为举例而并不限制本发明。本发明的目的已经完整并有效地实现。本发明的功能及结构原理已在实施例中展示和说明，在没有背离所述原理下，本发明的实施方式可以有任何变形或修改。
Claims (1)
1.一种太阳电池单晶硅基绒面生成工艺，其特征在于，该工艺采用以下步骤：
步骤（1）：单晶硅太阳电池片在生成绒面之前，使用氢氧化钾溶液，去除硅基表面切割损伤层，使硅基表面平整；
步骤（2）：使用氢氧化钾与双氧水混合溶液，在光滑平整的该硅基上形成二氧化硅氧化层；
步骤（3）：使用氢氧化钾、山梨酸钾、乙酸钠、消泡剂、表面活性剂混合溶液，在形成氧化层的该硅基上生成致密、均匀的绒面结构；
步骤（1）中该氢氧化钾溶液的氢氧化钾与纯水的体积比为100:1~1:100，处理时温度为40-90℃，处理时间为10-300s；
步骤（2）中该氢氧化钾与该双氧水的体积比为100:1~1:100，处理温度为40-90℃，处理时间为10-300s；
步骤（3）中该氢氧化钾与该山梨酸钾、该乙酸钠、该消泡剂、该表面活性剂的体积比为100:1:1:1:1~1:100:1:1:1~1:1:100:1:1~1:1:1:100:1~1:1:1:1:100，处理温度为40-180℃，处理时间为100-900s。
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