CN109314043A - 在石墨烯薄片上沉积钝化层 - Google Patents
在石墨烯薄片上沉积钝化层 Download PDFInfo
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Abstract
所公开技术的实施例包含将钝化层沉积到可以包含石墨烯层的晶片的表面上。所述钝化层可以保护且隔离所述石墨烯层与可能损坏所述石墨烯层的电和化学条件。因此,所述钝化层可以进一步保护石墨烯传感器免于损坏和影响其既定用途。另外,可以图案化所述钝化层以暴露所述钝化层下方的所述石墨烯层的选择区域,因此产生石墨烯凹孔且将所述石墨烯层暴露于适当的化学品和溶液。
Description
技术领域
所公开技术大体上涉及在石墨烯薄片上产生凹孔。更具体地,所公开技术涉及通过在石墨烯薄片之上沉积钝化层而在石墨烯薄片上产生凹孔。
背景技术
石墨烯包括按六边形的重复图案结合在一起的碳原子的单个薄层。石墨烯具有许多非凡的性质,包含高机械强度、高电子迁移率和优良的热导率。因为石墨烯是优良的热和电导体,所以石墨烯可以耦合到生物传感器和各种诊断装置中的金属触点或引线以提供化学和生物样本的准确分析测量。
然而,制备石墨烯且将其并入于生物传感器或其它诊断装置中可能是困难的任务,尤其是在大规模制造方面。这是因为当在石墨烯上产生凹孔时石墨烯可能经常被污染或损坏。
为了在处置和制备石墨烯薄片时防止石墨烯薄片的污染和短接,当前方法经常以光致抗蚀剂层或以用作抗蚀剂膜的聚甲基丙烯酸甲酯(下文为“PMMC”)层直接处理石墨烯薄片的表面和其金属触点。然而,这导致许多不合意的继发效应。举例来说,当将光致抗蚀剂或PMMC层直接施加到石墨烯上时,此直接接触污染石墨烯薄片的表面,且当并入到生物传感器或电子装置中时可能甚至使石墨烯的性能降级。因此,当前需要在制备和产生石墨烯凹孔时保护石墨烯层而不污染或损坏石墨烯层。
附图说明
根据一个或多个各种实施例,参考附图详细地描述本文公开的技术。附图是仅出于说明的目的而提供,且仅描绘所公开技术的典型或实例实施例。提供这些附图以促进读者对所公开技术的理解,且不应视为对所公开技术的广度、范围或适用性的限制。应注意,为了说明的清楚性和简易性起见,这些图式未必按比例绘制。
图1图示了根据一个实施例的将钝化层沉积到晶片上以用于产生石墨烯凹孔的不同进展。
图1A图示了根据一个实施例的具有金属涂层的石墨烯薄片。
图1B图示了根据一个实施例的沉积到具有石墨烯薄片的晶片上的钝化层。
图1C图示了根据一个实施例的施加到钝化层的表面上的光致抗蚀剂层。
图1D图示了根据一个实施例的对光致抗蚀剂层的图案化。
图1E图示了根据一个实施例的根据暴露区域来图案化钝化层。
图1F图示了根据一个实施例的光致抗蚀剂层的移除。
图2图示了根据一个实施例的在顶部上具有两个不同金属涂层的石墨烯薄片。
图3是根据一个实施例的说明用于将钝化层沉积到晶片上的方法的流程图。
附图并不希望为穷尽性的或将本发明限于所公开的精确形式。应理解,本发明可以用修改和更改来实践,且所公开技术仅由权利要求书及其等效物限制。
具体实施方式
以下描述不应以限制性意义来理解,而是仅仅出于描述所公开实施例的一般原理的目的。本发明的实施例解决背景技术中描述的问题,同时也解决从以下详细描述将要看到的其它额外问题。阐述许多具体细节以提供本公开的各种方面的完整理解。然而,所属领域的技术人员将了解,可以在无这些具体细节中的一些具体细节的情况下实践本公开的各种方面。在其它情况下,未详细示出众所周知的结构和技术以免不必要地混淆本公开。
所公开技术的实施例包含通过在含有石墨烯的晶片之上沉积钝化层而产生石墨烯凹孔。应注意,将层沉积到石墨烯薄片上可以包含如所属领域的技术人员理解的广泛范围的技术,仅借助于实例,例如涂层技术、聚焦离子束、长丝蒸发、溅镀沉积和电解。
一些实施例包含沉积均匀钝化层以涂覆电耦合到石墨烯的金属引线,以使得钝化层可以防止通过金属引线的电流的泄漏。仅借助于实例,钝化层可以是电介质层,例如二氧化硅层。然而,钝化层无需限于二氧化硅,而是还可包含氮化硅、氧化硅、非晶硅、多晶硅及类似物。
另外,其它实施例还可包含通过图案化钝化层的区域以暴露石墨烯传感器而暴露石墨烯传感器表面的选择区域。为了图案化钝化层,仅借助于实例,可首先将光致抗蚀剂层添加到钝化层的顶部表面,以使得光致抗蚀剂层充当用于将选择图案转移到钝化层上的模板。下文详细解释此图案化过程的更多内容。
在钝化层恰当地图案化的情况下,金属引线现在暴露且因此允许发生化学或生物感测。此外,这随后暴露紧邻于钝化层下方的石墨烯层。通过转移从光致抗蚀剂层和钝化层蚀刻的图案,可以相应地图案化石墨烯层以产生石墨烯凹孔。
图1大体上图示了根据一个实施例的将钝化层沉积到晶片上以用于产生石墨烯凹孔的不同进展。如所说明,图1A描绘具有第一金属涂层120的石墨烯薄片115,使得石墨烯薄片115可以放置在薄半导体材料的表面上,例如晶片105。晶片105可以充当衬底基础,恰当的电子集成电路可应用于所述衬底基础上。举例来说,晶片105可为硅衬底或二氧化硅衬底。然而,应注意,晶片还可包含例如石英、蓝宝石或塑料等材料。另外,晶片105可以涂覆有铂110,由此铂110充当底部电极。
另外,第一金属涂层120可以沉积到石墨烯薄片115的表面上,其中第一金属涂层120可以充当掩模或障壁以保护石墨烯免于污染或降级。仅借助于实例,第一金属涂层120可以包含金。因为金是具有耐腐蚀和氧化的特性性质的惰性金属,所以在顶部上以金层涂覆石墨烯薄片可以保护石墨烯薄片115。另外,由于金的在特性上惰性的质量,因此在石墨烯薄片115的表面上的金涂层可以进一步提供热保护且防止氧化,特别是当石墨烯在环氧树脂固化、烘炉烘焙和燃烧测试期间暴露于高温处理时。此外,仅借助于实例,在准备石墨烯薄片115以在传感器或装置内安装时的线接合、囊封、晶片切割和清洁期间,金涂层也可以保护石墨烯免于潜在地被污染。
然而,也可以使用其它惰性金属来涂覆石墨烯薄片,可包含(但不限于)包含钌、铑、钯、银、锇、铱、铂及类似物的金属。
为了以第一金属涂层120恰当地涂覆石墨烯薄片115,通过将具有石墨烯薄片115的晶片105放置在电子束蒸发腔室中,可以初始地准备石墨烯薄片115的表面。电子束蒸发是物理蒸汽安置技术,由此从长丝产生密集电子束且经由电场和磁场进行操控以冲击源材料,例如金球粒,且使其在真空环境内蒸发。因此,通过使用电子束蒸发技术,薄第一金属涂层120可以缓慢沉积到石墨烯薄片115上,其中第一金属涂层120的厚度可以在从10纳米到1微米的范围内。借助于另一实例,通过将石墨烯薄片115浸渍到金电镀液中可以将第一金属涂层120施加到石墨烯薄片115上。另外,沉积金属涂层的其它方法还可包含利用聚焦离子束、长丝蒸发、溅镀沉积、电解及类似方法。
此外,第二金属层(图1中未示出)可以沉积于第一金属涂层120之上。图2中示出第二金属层220。此处,石墨烯薄片210可以沉积于晶片之上,其中第一金属涂层215沉积于石墨烯薄片210之上。另外,第二金属涂层220可以沉积于第一金属涂层215之上。如上文所论述,第一金属涂层可以是金金属涂层以在线接合、囊封、晶片切割和清洁期间保护石墨烯免于潜在污染。然而,也可以使用不会与石墨烯不利地反应的其它惰性金属来涂覆石墨烯薄片,可包含(但不限于)钌、铑、钯、银、锇、铱、铂及类似物。
另外,第二金属涂层220可以沉积于第一金属涂层215之上。仅借助于实例,第二金属涂层220可为比第一金属涂层215更容易氧化的金属。第二金属涂层220也可被称作“粘附层”,因为第二金属涂层220充当充分粘到第一金属涂层215上并且还粘到正上方的光致抗蚀剂层225上的粘合剂。因此,第二金属涂层220可为具有特性性质的金属涂层,所述特性性质允许其粘附到下方的第一金属涂层215和正上方的钝化层225的表面上。仅借助于实例,第二金属涂层220可以包含金属层,所述金属层包含钛、铝、铬、镍和氮化钛中的至少一种。下文提供关于钝化层225的更详细信息。
返回参看图1和具体来说图1B,图1B图示了根据一个实施例的沉积到具有石墨烯薄片115的晶片105上的钝化层125。举例来说,钝化层125可以包含均匀的二氧化硅层,其涂覆到以电子方式耦合到在晶片105上的石墨烯薄片115的金属连接器引线上。在一些实施例中,石墨烯薄片115可以与第一金属涂层120分层,以使得钝化层125沉积于第一金属涂层120之上。然而,应注意钝化层125可以沉积于第一金属涂层120或第二金属涂层(此处未图示)上,如上文参考图2所描述。另外,钝化层125无需限于二氧化硅层,而是还可包含氮化硅、氧化硅、非晶硅、多晶硅及类似物。
为了将钝化层125均匀地沉积到晶片105上,可以利用等离子增强化学气相沉积技术。等离子增强化学气相沉积(下文为“PECVD”)可以在比其它常规沉积技术低的温度下在晶片105上沉积薄膜,例如薄二氧化硅膜。举例来说,所述温度可以在从100℃到200℃的范围。这允许利用较平稳的沉积技术,这也不大可能损坏石墨烯和正制造的传感器或装置。在PECVD工艺中,通过引入反应气体且接着将反应气体激发为等离子,所述等离子随后引发化学反应以使得产物的薄层沉积到晶片105上,而实现沉积。然而,也可利用其它沉积技术将均匀钝化层125沉积到晶片105上,仅借助于实例,例如感应耦合等离子PECVD、溅镀和电子束蒸发。
通过利用所属领域的技术人员已知的任何已知沉积技术,钝化层125的厚度可以在从100纳米到1微米的范围内。在钝化层125涂覆到晶片上的情况下,钝化层125还对位于晶片105的表面上的金属触点引线提供经涂覆层。因此,钝化层125可以有效地减少任何反向电流泄漏,增加击穿电压,且甚至升高功耗额定值。然而,因为金属触点引线形成于晶片105上且现在当前涂覆有钝化层125,所以可以图案化钝化层125以产生凹孔,以便使下方的金属触点引线的部分暴露于化学环境。
为了准备钝化层125的图案化,光致抗蚀剂层130可以沉积于晶片105上,如图1C中所图示。光致抗蚀剂层130可以包含光敏材料,其当暴露于辐射源时经历其物理性质的改变。通过以辐射选择性暴露光致抗蚀剂层130,可以蚀刻掉光致抗蚀剂层130的这些暴露区域,因此暴露光致抗蚀剂层130下方的钝化层125的部分,如图1D中所示出。换句话说,在光致抗蚀剂层130上的蚀刻图案充当蚀刻模板,以使得蚀刻图案随后适当地转移到光致抗蚀剂层130下方的钝化层125。
在图案恰当地蚀刻到光致抗蚀剂层130上的情况下,钝化层125可以现在前进到还根据蚀刻到光致抗蚀剂层130上的图案进行图案化,如图1E中所图示。因此,当蚀刻光致抗蚀剂层时光致抗蚀剂层130不受辐射影响是重要的,以使得仅光致抗蚀剂层被蚀刻和图案化,而钝化层130保持完整。
因此,为了蚀刻掉钝化层125的部分,钝化层125自身可以经由反应性离子蚀刻进行蚀刻。反应性离子蚀刻是干式蚀刻的方法,其利用化学反应性等离子来移除钝化层125的所选择部分。因此,光致抗蚀剂层130仍剩余的区域将继续充当障壁或保护层,因为光致抗蚀剂层130对反应性离子蚀刻是非作用的。另外,因为还以金金属涂层125保护和覆盖石墨烯薄片115,所以也保护石墨烯薄片115免于反应性离子蚀刻。换句话说,反应性离子蚀刻将仅蚀刻掉暴露的钝化层125。
在钝化层125现在相应地经图案化的情况下,金属引线或连接现在暴露,因此通过在具有石墨烯薄片115的晶片105上产生这些凹孔而允许金属引线或连接进行适当的传感器测量。因为钝化层125现在也已图案化,所以现在可以移除光致抗蚀剂层130,如图1F中所图示。举例来说,为了移除光致抗蚀剂层130,可以用丙酮冲洗具有光致抗蚀剂层130的晶片105达2到10分钟,随后用异丙醇再冲洗1到5分钟,因此有效地且完全地移除光致抗蚀剂层130。
图3是根据一个实施例的说明用于将钝化层沉积到晶片上的方法300的流程图。示例性方法300包含在步骤310将金金属涂层沉积到石墨烯薄片上。然而,应注意,石墨烯薄片不限于金金属涂层,而是也可以涂覆有广泛范围的其它惰性金属。实例可包含(但不限于)钌、铑、钯、银、锇、铱、铂及类似物。
金金属涂层可以充当保护性障壁或掩模,其被配置成在制备石墨烯以供在基于石墨烯的装置内使用时保护石墨烯免于污染或损坏。由于金的惰性性质,金金属涂层可以保护石墨烯免于损坏或降级,仅借助于实例,特别是当在环氧树脂固化、焊接和燃烧测试期间将石墨烯处理和暴露于高温时。另外,金金属涂层可以进一步防止石墨烯被污染,特别是当通过焊料蒸汽、苛刻的化学品、线接合、切割和清洁而暴露和处理石墨烯时。
接下来,示例性方法300可以前进到在步骤320在第一金属涂层之上沉积第二金属涂层。用于第二金属涂层的金属可以包含钛、铝、铬、镍和氮化钛中的任一种。
接下来,示例性方法300可以包含在步骤330在第二金属涂层之上沉积钝化层。因为用以产生金属触点引线的大多数金属是导体,所以在石墨烯晶片上的金属连接上方沉积钝化层以帮助防止电流泄漏和损坏基于石墨烯的装置。钝化层可以是电介质层,例如二氧化硅。然而,也可以使用其它材料,例如氮化硅、氧化硅、非晶硅和多晶硅。
因为在晶片上沉积钝化层完全覆盖晶片上的所有金属触点引线,所以钝化层可以经图案化以使得金属引线暴露。换句话说,这允许产生石墨烯凹孔。然而,在直接图案化钝化层之前,可首先在步骤340在钝化层上方沉积光致抗蚀剂层。可以在钝化层上方涂覆光致抗蚀剂层,因为光致抗蚀剂层可以充当临时掩模,当经由蚀刻技术图案化钝化层时所述临时掩模充当图案化模板。
举例来说,在步骤350,可以将光致抗蚀剂层的选择区域暴露于辐射源,以使得将那些暴露的区域蚀刻掉以产生所需图案。因为光致抗蚀剂层的一些部分被蚀刻掉,所以在光致抗蚀剂层下方的钝化层的一些部分现在暴露于环境。随后可以在步骤360蚀刻钝化层的暴露区域,以使得根据光致抗蚀剂层的蚀刻图案模板来图案化钝化层。
一旦钝化层经图案化和相应地蚀刻,金属触点引线现在就恰当地暴露于环境。因此,必要的化学和生物感测可以经由暴露的金属触点引线发生。随后可以在步骤370从钝化层移除整个光致抗蚀剂层。
尽管上文已描述所公开技术的各种实施例,但应理解,它们仅通过举例而非限制的方式呈现。同样,各种图可以描绘所公开技术的实例架构或其它配置,这有助于理解所公开技术中可包含的特征和功能性。所公开技术并不限于所说明的示例架构或配置,而是所希望的特征可以使用多种替代架构和配置实施。实际上,所属领域的技术人员将了解可以如何实施替代的功能、逻辑或物理分割和配置以实施本文公开的技术的所需特征。并且,除本文中所描绘的那些模块名称外的众多不同组成的模块名称可以应用于各种分区。另外,关于流程图、操作描述和方法权利要求项,除非上下文另外指定,否则在本文中呈现步骤的次序将不要求各种实施例被实施成以相同次序执行所叙述的功能性。
尽管上文就各种示例性实施例和实施方案而言描述所公开技术,但应理解,个别实施例中的一个或多个中所描述的各种特征、方面和功能性的适用性并不限于与其一起描述的特定实施例,而是可单独或以各种组合应用于所公开技术的其它实施例中的一个或多个,无论是否描述此类实施例且无论是否将此类特征呈现为所描述实施例的一部分。因此,本文公开的技术的宽度和范围不应受到任何上述示例性实施例限制。
除非另有明确陈述,否则在本文档中使用的术语和短语及其变体都应该被解释为与限制性相反的开放性。作为上述内容的实例:术语“包含”应该被理解为意味着“包含但不限于”等;术语“实例”用于提供论述的物品的示例性实例,而非其详尽的或限制性的列表;术语“一个”应该被理解为意味着“至少一个”、“一个或多个”等;以及形容词例如“常规的”、“传统的”、“通常的”、“标准的”、“已知的”以及类似含义的术语不应被解释将描述的物品限制到给定时间周期或在给定时间内可用的物品,而是实际上应该被理解为涵盖现在已知的或在将来任何时间可用的常规的、传统的、通常的或标准的技术。类似地,虽然本文档参照对于所属领域的一般技术人员将是显而易见或已知的技术,但是此类技术涵盖现在或在将来任何时间对于所属领域的技术人员是显而易见或已知的那些技术。
在一些情况下拓宽词语和短语的存在例如一个或多个、至少、但不限于,或其它类似短语不应被理解为意味着在可能不存在此类拓宽短语的实例中意图或需要较狭窄的情况。术语“模块”的使用并不暗示所描述的或所主张的作为所述模块的一部分的组件或功能都配置在一个共同的封装中。实际上,模块的各种组件中的任何一个或所有的,无论是否是控制逻辑或其它组件都可以组合在单个封装中或单独地维持并且可以进一步被分配在多个分组或封装中或跨越多个位置。
另外,本文中阐述的各个实施例是就示例性框图、流程图和其它图示而言描述的。如本领域的技术人员在阅读此文档之后将明白,可以实施所示出的实施例和其各种替代方案而不限于所示出的实例。举例来说,框图和它们的随附的描述不应被解释为要求特定的架构或配置。
Claims (18)
1.一种用于产生石墨烯凹孔的方法,其包括:
在衬底上放置石墨烯薄片;
在所述石墨烯薄片之上沉积第一金属层;
在所述第一金属层之上沉积钝化层;以及
在所述钝化层之上沉积光致抗蚀剂层。
2.根据权利要求1所述的方法,其进一步包括在所述第一金属层与所述钝化层之间沉积第二金属层。
3.根据权利要求1所述的方法,其中所述第一金属层包括金。
4.根据权利要求1所述的方法,其中所述第一金属层包括钌、铑、钯、银、锇、铱或铂。
5.根据权利要求2所述的方法,其中所述第二金属层包括钛、铝、铬、镍或氮化钛。
6.根据权利要求1所述的方法,其中所述钝化层包括电介质层。
7.根据权利要求6所述的方法,其中所述电介质层包括二氧化硅、氮化硅、氧化硅、非晶硅或多晶硅。
8.根据权利要求1所述的方法,其进一步包括蚀刻所述光致抗蚀剂层以暴露所述钝化层的表面。
9.根据权利要求1所述的方法,其中所述光致抗蚀剂层的所述蚀刻包括施加丙酮冲洗和施加异丙醇冲洗。
10.根据权利要求1所述的方法,其进一步包括通过干式蚀刻技术移除所述钝化层。
11.根据权利要求1所述的方法,其中沉积所述钝化层包括应用等离子增强化学气相沉积工艺。
12.根据权利要求1所述的方法,其中所述沉积所述钝化层包括利用范围从100℃到200℃的温度的沉积工艺。
13.一种用于产生石墨烯凹孔的方法,其包括:
在衬底上放置石墨烯薄片;
在所述石墨烯薄片之上沉积第一金属层;
在所述第一金属层之上沉积钝化层;
在所述钝化层之上沉积光致抗蚀剂层;以及
在所述光致抗蚀剂层上蚀刻图案以暴露所述钝化层的表面。
14.根据权利要求13所述的方法,其进一步包括在所述第一金属层与所述钝化层之间沉积第二金属层。
15.根据权利要求13所述的方法,其中所述第一金属层包括金、钌、铑、钯、银、锇、铱或铂。
16.根据权利要求14所述的方法,其中所述第二金属层包括钛、铝、铬、镍或氮化钛。
17.根据权利要求13所述的方法,其中所述钝化层包括二氧化硅、氮化硅、氧化硅、非晶硅或多晶硅。
18.根据权利要求13所述的方法,其中所述钝化层包括利用范围从100℃到200℃的温度的沉积工艺。
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