CN109312213B - 研磨液、化学机械研磨方法 - Google Patents

研磨液、化学机械研磨方法 Download PDF

Info

Publication number
CN109312213B
CN109312213B CN201780034712.7A CN201780034712A CN109312213B CN 109312213 B CN109312213 B CN 109312213B CN 201780034712 A CN201780034712 A CN 201780034712A CN 109312213 B CN109312213 B CN 109312213B
Authority
CN
China
Prior art keywords
polishing
acid
group
polishing liquid
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780034712.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN109312213A (zh
Inventor
上村哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of CN109312213A publication Critical patent/CN109312213A/zh
Application granted granted Critical
Publication of CN109312213B publication Critical patent/CN109312213B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201780034712.7A 2016-06-06 2017-05-15 研磨液、化学机械研磨方法 Active CN109312213B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016112944 2016-06-06
JP2016-112944 2016-06-06
PCT/JP2017/018151 WO2017212874A1 (ja) 2016-06-06 2017-05-15 研磨液、化学的機械的研磨方法

Publications (2)

Publication Number Publication Date
CN109312213A CN109312213A (zh) 2019-02-05
CN109312213B true CN109312213B (zh) 2021-11-30

Family

ID=60578571

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780034712.7A Active CN109312213B (zh) 2016-06-06 2017-05-15 研磨液、化学机械研磨方法

Country Status (5)

Country Link
JP (1) JP6808731B2 (ja)
KR (2) KR102340528B1 (ja)
CN (1) CN109312213B (ja)
TW (1) TWI727052B (ja)
WO (1) WO2017212874A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7002354B2 (ja) * 2018-01-29 2022-02-04 ニッタ・デュポン株式会社 研磨用組成物
CN109746771B (zh) * 2019-02-14 2020-11-20 南京航空航天大学 一种CsPbX3无机钙钛矿晶体材料的抛光方法
KR102261822B1 (ko) * 2019-05-23 2021-06-08 에스케이씨솔믹스 주식회사 결함 발생이 감소된 cmp 슬러리 조성물 및 이의 제조방법
KR20220046561A (ko) * 2019-08-08 2022-04-14 바스프 에스이 텅스텐 에칭 억제용 조성물
CN114507478B (zh) * 2022-02-24 2023-05-09 北京通美晶体技术股份有限公司 一种砷化镓晶片加工用抛光液及其制备方法
CN115044299B (zh) * 2022-07-04 2023-11-17 浙江奥首材料科技有限公司 一种水溶性高比重大尺寸磨料悬浮助剂、制备方法、用途及包含其的研磨液

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3430733B2 (ja) * 1994-09-30 2003-07-28 株式会社日立製作所 研磨剤及び研磨方法
TW274625B (ja) * 1994-09-30 1996-04-21 Hitachi Seisakusyo Kk
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
KR20100123678A (ko) * 2008-02-18 2010-11-24 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
KR100982870B1 (ko) * 2008-08-22 2010-09-16 주식회사 케이티 단말기 ｕｉ 저작 방법, 단말기 ｕｉ 저작 장치 및 단말기 ｕｉ 저작 방법을 구현하기 위한 프로그램이 기록된 기록매체
JP6038640B2 (ja) * 2012-12-17 2016-12-07 株式会社フジミインコーポレーテッド 基板濡れ性促進組成物、並びにこれを含む研磨用組成物およびこれを用いた基板の製造方法
WO2015004567A2 (en) * 2013-07-11 2015-01-15 Basf Se Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors

Also Published As

Publication number Publication date
KR20210104161A (ko) 2021-08-24
JPWO2017212874A1 (ja) 2019-05-16
CN109312213A (zh) 2019-02-05
TWI727052B (zh) 2021-05-11
JP6808731B2 (ja) 2021-01-06
TW201742899A (zh) 2017-12-16
WO2017212874A1 (ja) 2017-12-14
KR102340528B1 (ko) 2021-12-20
KR20190005918A (ko) 2019-01-16

Similar Documents

Publication Publication Date Title
CN109312213B (zh) 研磨液、化学机械研磨方法
JP6023125B2 (ja) 化学的機械的研磨スラリー組成物およびそれを使用した銅のための方法およびシリコン貫通ビア適用
TWI744337B (zh) 研磨液、化學機械研磨方法
US8034252B2 (en) Metal-polishing liquid and chemical-mechanical polishing method using the same
KR20080016934A (ko) 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
JP2003124160A (ja) 研磨用組成物およびそれを用いた研磨方法
KR20080069537A (ko) 금속 연마액 및 그것을 이용한 연마방법
JP7330966B2 (ja) 化学機械研磨組成物
JP7300030B2 (ja) 研磨液および化学的機械的研磨方法
KR102500452B1 (ko) 연마액, 화학적 기계적 연마 방법
TW201536904A (zh) 硏磨用組成物
JP2008227098A (ja) 金属用研磨液
KR102492098B1 (ko) 연마제, 연마제용 저장액 및 연마 방법
KR102609113B1 (ko) 연마액, 연마액의 제조 방법, 연마액 원액, 및 화학적 기계적 연마 방법
JP2008244316A (ja) 金属用研磨液及び研磨方法
KR102499989B1 (ko) 연마액 및 화학적 기계적 연마 방법
KR20130121721A (ko) 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
TW201718793A (zh) 研磨用組成物
TW202115224A (zh) 低淺盤效應銅化學機械平坦化
TW202101568A (zh) 研磨液及化學機械研磨方法
TW202108733A (zh) 研磨液及化學機械研磨方法
TW202100682A (zh) 研磨液及化學機械研磨方法
TW202031825A (zh) 研磨用組合物及研磨方法
JPWO2017208667A1 (ja) 研磨液、及び化学的機械的研磨方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant