CN109155193A - 发电机 - Google Patents
发电机 Download PDFInfo
- Publication number
- CN109155193A CN109155193A CN201780024300.5A CN201780024300A CN109155193A CN 109155193 A CN109155193 A CN 109155193A CN 201780024300 A CN201780024300 A CN 201780024300A CN 109155193 A CN109155193 A CN 109155193A
- Authority
- CN
- China
- Prior art keywords
- conductive plate
- encapsulation
- ferroelectric material
- different
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 26
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000005538 encapsulation Methods 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 14
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004317 sodium nitrate Substances 0.000 claims abstract description 5
- 235000010344 sodium nitrate Nutrition 0.000 claims abstract description 5
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910000809 Alumel Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910000570 Cupronickel Inorganic materials 0.000 claims description 3
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 2
- PEEDYJQEMCKDDX-UHFFFAOYSA-N antimony bismuth Chemical compound [Sb].[Bi] PEEDYJQEMCKDDX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000010955 niobium Substances 0.000 description 9
- 230000005611 electricity Effects 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910001422 barium ion Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000013074 reference sample Substances 0.000 description 2
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- YTOPFCCWCSOHFV-UHFFFAOYSA-N 2,6-dimethyl-4-tridecylmorpholine Chemical compound CCCCCCCCCCCCCN1CC(C)OC(C)C1 YTOPFCCWCSOHFV-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-L Phosphate ion(2-) Chemical compound OP([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 230000000181 anti-adherent effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- XDFCIPNJCBUZJN-UHFFFAOYSA-N barium(2+) Chemical compound [Ba+2] XDFCIPNJCBUZJN-UHFFFAOYSA-N 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 108010028309 kalinin Proteins 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- VZOPRCCTKLAGPN-ZFJVMAEJSA-L potassium;sodium;(2r,3r)-2,3-dihydroxybutanedioate;tetrahydrate Chemical compound O.O.O.O.[Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O VZOPRCCTKLAGPN-ZFJVMAEJSA-L 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229940074446 sodium potassium tartrate tetrahydrate Drugs 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GZXOHHPYODFEGO-UHFFFAOYSA-N triglycine sulfate Chemical compound NCC(O)=O.NCC(O)=O.NCC(O)=O.OS(O)(=O)=O GZXOHHPYODFEGO-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/003—Titanates
- C01G23/006—Alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/06—Influence generators
- H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/008—Alleged electric or magnetic perpetua mobilia
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/42—Magnetic properties
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Geology (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Secondary Cells (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Hybrid Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
一种发电机包括外壳(1),其具有两个符号的导电板的封装,所述封装包括至少一个单元电池,所述单元电池由一层铁电材料(3)和两个相异导电板构成,它们按照下述顺序放置:导电板(2)‑铁电材料(3)‑不同于第一个导电板(2)的导电板。所述封装内的所有层相互紧密配合,并且所述导电板(2)由具有不同自由电子浓度的相异导体构成。被用作铁电材料的铁电半导体可以选自由亚销酸钠、基于钛酸钡、铌酸锂、铌酸钾、钛酸铅的半导体陶瓷等构成的列表。
Description
本发明涉及电气工程,并且能够用于发电。
连同广泛使用的传统动态发电机,还有普及度差一些的不包含移动细节的静态装置,在这类装置中使用化学反应的能量、热能、磁场能量等。
存在一种使用有源电介质材料-铁电体和驻极体-的内部能量发电的装置(参考2008年9月10日公开的发明专利UA No.84117,IPC(2006)H01M 6/00;H01G 4/00)。
这一用于发电的装置由具有两种符号的板的封装的外壳构成,所述两种符号的板被铁电材料层隔开并且配备有电荷板,该电荷板通过铁电层与其余部分隔开,其中,所述电荷板由诸如聚四氟乙烯、聚碳酸酯、钛酸钙、玻璃等的双极驻极体构成,并且采用稳定的单晶铁电体作为铁电材料,例如,钛酸钡、聚偏二氟乙烯、硫酸三甘肽、酒石酸钾钠、磷酸二氢钾、铌酸锂、ammonium ftorberilat及其他,其中所述板的封装包括至少一个基本电池,所述基本电池由一个驻极体、两个由铁电材料构成的板以及两个金属板构成,同时所有层都相互抵靠,并且按照下述顺序布置:金属板-铁电材料-驻极体-铁电材料-金属板,并且在具有多于一个的基本电池的封装的情况下,它们按照使得每一后续基本电池被布置为通过类似的导电部分的电荷与前一基本单元邻接的方式交替。
自发极化的铁电材料的有序极化是所述装置成功运转所必需的。这样的极化发生在受到恒定电磁场影响的所述装置内,所述电磁场是通过对驻极体所代表的板充电而建立的。
所提及的装置的主要缺陷在于驻极体的短寿命预期、它们在操作过程中的低稳定性以及制造驻极体的复杂性并且因而自然涉及到的它们的高成本。
静态电能发电机是已知的(参考2009年12月1日公开的发明专利UA No.85360,IPC(2006)H01G 4/12;H01G 4/008;H01G 4/018),在所述发电机中排除了对驻极体的应用,并且利用通过相异导体构成的金属板建立的恒定电磁场实现自发极化铁电材料的极化有序化,其中,所述相异导体具有自由电子浓度方面的显著差异。
静态电能发电机包括具有两种符号的金属板的封装的外壳,所述两种符号的金属板由稳定的单晶铁电体层隔开,并且在所述封装中所有层都相互密切接触,所述金属板由具有自由电子浓度的显著差异的相异导体构成,即,所述金属板由以下各项构成:两种不同金属,例如,锑-铋、铁-镍、钛-铝;各种合金,例如,铬镍合金-铝镍合金、铬镍合金-铜镍合金;或者金属-合金组合,例如,铁-铜镍合金、锑-铝镍合金、铬镍合金-铋,其中所述板的封装包括至少一个基本电池,所述基本电池由一层铁电材料和两个相异导电板构成,它们按照下述顺序放置:导电板-铁电材料-不同于第一个导电板的导电板,如果所述封装包含多于一个的单元电池,那么将它们串联或者并联连接至电能源或者以混合方式连接至电能源,即,一些单元电池并联连接,一些单元电池并联连接。
这种静态发电机的缺陷是小的比电功率(specific electric power),其原因在于单元电池内的高内部电阻。高内部电阻是由铁电材料的使用引起的,铁电材料实质上是明显的绝缘体,其比电阻可高达1016欧姆·厘米。
所述静态发电机被选择作为原型。所述原型和所要求保护的发电机具有下述共同特征:
-具有两种符号的导电板的封装的外壳,所述两种符号的导电板通过稳定的单晶铁电体层隔开,其中,所述封装内的所有层相互紧密抵靠;
-所述板的封装包括至少一个由铁电材料和两个金属板一层挨一层地构成的单元电池,所述两个金属板由具有显著的自由电子浓度差异的相异导体构成,按照下述顺序布置:导电板-铁电材料-不同于第一个导电板的导电板;
-单元电池以串联或者并联或者混合方式(一些单元电池串联连接,并且一些单元电池并联连接)连接至电能源。
已知,还存在具有半导体特性的铁电材料,即,所谓的铁电体半导体,其具有处于导体和绝缘体之间的中间位置的比电阻值(10-2-107欧姆·厘米)。例如,亚销酸钠(NaNO2)、基于铌酸锂、铌酸钾、钛酸铅、钛酸钡的半导体陶瓷材料以及很多其他材料(参考V.M.Fridkin Ferroelectric semiconductors.-M.:Nauka,1976.-408p.V.V.Ivanov,A.A.Bogomolov,Ferroelectric semiconductors.Kalinin.Kalinin University Press,1978.96p)。
具体而言,铁电材料钛酸钡BaTiO3是一种具有超过1012欧姆·厘米的比电阻的电介质,但是有可能利用强制恢复(参考2001年1月27日公布的专利RU 2162457,IPC(7)C04B35/468,C04B35/64)或者通过控制其化合价(参考Solid-state chemistry andmodern micro-and nanotechnology VI International Conference.KislovodskStavropol:NCSTU,2006.510p.the sol-gel method for producing semiconductorbarium titanate doped with lanthanum oxide Bal-XLaXTiO3 and tungsten oxideBaTil-XWXO3(x=0.001,0.002).G.G.Emello,T.A.Shichkova)而将其转化为具有10-103欧姆·厘米的比电阻的铁电半导体。
为了获得基于钛酸钡的半导体陶瓷,对其进行掺杂。采用离子W6+、Sb5+、Nb5+、Ta5+等代替钛离子Ti4+。采用Mn4+、La3+、Nd3+、Y3+、Gd3+等代替钡离子Ba2+。掺杂元素的浓度通常低于0.3原子百分比。
本发明的基本目的在于通过利用所使用物质的内部能量来产生电力。
所述问题在由具有两种符号的导电板的封装的外壳构成的发电机中得以解决,所述两种符号的导电板通过稳定的单晶铁电体层隔开,其中,所述封装内的所有层都紧密地相互抵靠,其中,所述板的封装包括至少一个由铁电材料和两个金属板一层挨一层地构成的单元电池,所述两个金属板由具有显著的自由电子浓度差异的相异导体构成,所述构成层是按照下述顺序排列的:导电板-铁电材料-不同于第一个导电板的导电板,并且各单元电池以串联或者并联或者混合方式(一些单元电池串联连接,并且一些单元电池并联连接)连接至电能源,所述问题的解决利用了这样的事实,即,采用稳定的铁电半导体的单晶代替了稳定的铁电材料的单晶,例如,所述铁电半导体为亚销酸钠、基于钛酸钡、铌酸锂、铌酸钾、钛酸铅的半导体陶瓷等,其降低了单元电池的内部电阻,并且在所述单元电池连接至电功率源时提高了所述单元电池的比电功率(specific electric power)。
所要求保护的装置中的新特征是采用稳定的铁电半导体的单晶对稳定的铁电材料的单晶的替代,例如,所述铁电体半导体是亚销酸钠、基于钛酸钡、铌酸锂、铌酸钾、钛酸铅的半导体陶瓷等,其降低了单元电池的内部电阻,并且在所述单元电池连接至电功率源时提高了所述单元电池的比电功率。
所要求保护的该组所存在差异与可获得技术结果之间的因果关系如下:
-采用具有低于107欧姆·厘米的电阻的铁电半导体而非具有可高达1016欧姆·厘米的比电阻的显著电介质作为活性单元电池元件将允许降低单元电池的内部电阻,并且在单元电池的相同成对集流器处获得更高的比电流。
恒定电势差上的比电流的提高将带来单元电池的比功率的相对于原型的两倍以上的自然增长。
-单元电池的比功率的提高允许在技术和经济方面均拓展所要求保护的发电机的实际使用的可能性。
图1中示出了由至少一个单元电池构成的发电机。这一发电机由外壳1构成,在外壳1内放置有一对由具有不同的自由电子浓度的相异导体构成的导体2,在导体2之间具有铁电半导体3,导体2通过绝缘体4连接至电功率源。
作为用于制造所述发电机元件的铁电半导体的示例,给出了下述基于钛酸钡的半导体陶瓷:
-以0.220%的原子浓度掺杂了铌(Nb)的钛酸钡,其具有6470欧姆·厘米的比电阻;
-以0.125%的原子浓度掺杂了镧(La)的钛酸钡,其具有883500欧姆·厘米的比电阻。
作为原型的参考样本是采用具有2710000000欧姆·厘米的比电阻的钛酸钡制成的。
采用铁-镍作为一对相异导体。发电机由至少一个单元电池构成。所述单元电池是通过在具有1dm2的表面的抗粘附基础涂层上依次进行真空淀积而制造的。
形成具有9-10微米厚度的多个导体层,形成具有小于1微米厚度的铁电半导体层,以提供连续的无孔隙均匀涂层。
示例1
通过钛酸钡的原型制作所述单元电池的参考样本。将具有1dm2的表面面积的图案放置到采用聚甲基处理过的经抛光的聚四氟乙烯基础涂层上,并且喷涂具有9-10微米厚度的铁层。去除所述图案并且喷涂另一层钛酸钡,从而提供具有可达1微米厚度的连续均匀无孔隙涂层。
之后,将所述图案放回,并喷涂具有9-10微米厚度的镍层。去除所述图案,并采用真空吸盘将完成的元件与基础涂层分离。使用乙醚将聚甲基硅氧烷迹线从铁的表面层去除,并且通过干燥空气吹掉剩余的乙醚。之后,将所述单元电池置于分别由铁和镍构成的接线柱之间。将所获得的发电机连接至电源。
示例2
制作掺有铌的钛酸钡的单元电池。
所述单元电池是通过在示例1中描述的技术制作的,这里将采用掺有铌的钛酸钡以取代钛酸钡。
示例3
通过在示例1中描述的技术制作单元电池,这里将采用掺有镧的钛酸钡以取代钛酸钡。
表1示出了相较于由钛酸钡构成的作为原型的参照样本,在来自铁电材料半导体的1000欧姆的外部负载下一个单元电池的电功率(mW)与电压值(V)和电流值(mA)之间的关系。
我们研究了作为单个单元电池的部分的铁电半导体的每者的工作持续时间。在从-20到+110摄氏度的温度范围内,每一单元电池连续工作18000个小时以上。
表1
铁电材料 | 电功率(mW) | 电压(V) | 电流(mA) |
钛酸钡 | 1.129 | 1.062 | 1.063 |
掺有铌(Nb)的钛酸钡 | 2.358 | 1.060 | 2.225 |
掺有镧(La)的钛酸钡 | 2.111 | 1.061 | 1.990 |
根据该表格可以看出,在使用铁电半导体的情况下,电功率显著提高。在采用掺有铌(Nb)的钛酸钡时,发电机单元电池的电功率相对于原型有2,088倍的提高。在采用掺有镧(La)的钛酸钡时,发电机单元电池的电功率相对于原型有1,869倍的提高。根据其实际应用,所要求保护的发电机相对于原型具有显著的优势。
Claims (1)
1.一种由具有两种符号的导电板的封装的外壳构成的发电机,所述两种符号的导电板由铁电体层隔开,其中,所述封装中所有层都相互密切配合,并且所述导电板由具有不同自由电子浓度的相异导体构成,即所述导电板由以下各项构成:两种不同金属,例如,锑-铋、铁-镍、钛-铝;各种合金,例如,铬镍合金-铝镍合金、铬镍合金-铜镍合金;或者金属-合金组合,例如,铁-铜镍合金、锑-铝镍合金、铬镍合金-铋,其中所述板的封装包括至少一个单元电池,所述单元电池由一层铁电材料和两个相异导电板构成,它们按照下述顺序放置:导电板-铁电材料-不同于第一个导电板的导电板,如果所述封装包含多于一个的单元电池,那么它们以串联或并联方式或者以混合方式,即一些单元电池串联连接并且一些单元电池并联连接的方式,连接至电能源。所要求保护的发电机的主要差异在于使用铁电半导体作为铁电材料,例如,亚销酸钠、基于钛酸钡、铌酸锂、铌酸钾、钛酸铅的半导体陶瓷等。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAA201604279 | 2016-04-18 | ||
UAA201604279A UA115716C2 (uk) | 2016-04-18 | 2016-04-18 | Генератор електроенергії |
PCT/UA2017/000038 WO2017184102A1 (en) | 2016-04-18 | 2017-04-11 | Electrical power generator |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109155193A true CN109155193A (zh) | 2019-01-04 |
CN109155193B CN109155193B (zh) | 2022-02-08 |
Family
ID=60116257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780024300.5A Active CN109155193B (zh) | 2016-04-18 | 2017-04-11 | 发电机 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20190044457A1 (zh) |
EP (1) | EP3446321A4 (zh) |
JP (1) | JP7096165B2 (zh) |
KR (1) | KR102466906B1 (zh) |
CN (1) | CN109155193B (zh) |
EA (1) | EA036556B1 (zh) |
UA (1) | UA115716C2 (zh) |
WO (1) | WO2017184102A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020172499A1 (en) * | 2019-02-22 | 2020-08-27 | Massachusetts Institute Of Technology | Resistive switching devices containing lithium titanate, and associated systems and methods |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1276629A (zh) * | 1999-06-04 | 2000-12-13 | 国际商业机器公司 | 具有内部氧源的铁电随机存储单元及释放氧的方法 |
JP2006108290A (ja) * | 2004-10-04 | 2006-04-20 | Seiko Epson Corp | 電極膜、圧電素子、強誘電体キャパシタ及び半導体装置 |
US20060214204A1 (en) * | 2005-03-23 | 2006-09-28 | Dong-Chul Yoo | Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same |
UA85360C2 (uk) * | 2008-10-03 | 2009-01-12 | Генрик Генрикович Шуминский | Статичний генератор електричної енергії |
CN101558510A (zh) * | 2006-09-26 | 2009-10-14 | Tti联合有限责任公司 | 发电机 |
CN101860261A (zh) * | 2010-03-26 | 2010-10-13 | 辽宁师范大学 | 一种逆压电纳米半导体发电机 |
CN102751094A (zh) * | 2011-04-22 | 2012-10-24 | 中国科学院微电子研究所 | 一种基于欧姆接触的铁电薄膜电容及其制备方法 |
CN102832266A (zh) * | 2012-09-07 | 2012-12-19 | 苏州大学 | 铁电光伏器件及其制备方法 |
CN104992992A (zh) * | 2015-06-08 | 2015-10-21 | 常熟苏大低碳应用技术研究院有限公司 | 一种铁电薄膜太阳能电池 |
US20150364682A1 (en) * | 2013-01-16 | 2015-12-17 | Helmholtz-Zentrum Dresden-Rossendorf E.V. | Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3299332A (en) * | 1961-07-10 | 1967-01-17 | Murata Manufacturing Co | Semiconductive capacitor and the method of manufacturing the same |
JPS5437289B1 (zh) * | 1965-09-17 | 1979-11-14 | ||
US3268783A (en) * | 1965-10-05 | 1966-08-23 | Murata Manufacturing Co | Capacitor comprising an nu-type semiconductor metallic oxide and a layer of compensated material |
US3426250A (en) * | 1966-08-01 | 1969-02-04 | Sprague Electric Co | Controlled reduction and reoxidation of batio3 capacitors and resulting capacitor |
US5087533A (en) * | 1989-10-12 | 1992-02-11 | Brown Paul M | Contact potential difference cell |
JPH03145108A (ja) * | 1989-10-30 | 1991-06-20 | Sumitomo Metal Ind Ltd | コンデンサ及びその製造方法 |
RU2047925C1 (ru) * | 1990-12-07 | 1995-11-10 | Научно-исследовательский институт "ГИРИКОНД" | Сегнетокерамический полупроводниковый чип-конденсатор |
JPH0521265A (ja) * | 1991-05-24 | 1993-01-29 | Sumitomo Metal Ind Ltd | コンデンサの製造方法 |
JP3125481B2 (ja) * | 1992-11-19 | 2001-01-15 | 松下電器産業株式会社 | 粒界絶縁層型半導体磁器組成物 |
JP2934387B2 (ja) * | 1994-10-20 | 1999-08-16 | 太陽誘電株式会社 | 半導体磁器の製造方法 |
RU2162457C1 (ru) | 1999-05-13 | 2001-01-27 | Белорусский государственный технологический университет | Способ изготовления полупроводниковой керамики на основе титаната бария |
JP4888418B2 (ja) * | 2008-02-29 | 2012-02-29 | ソニー株式会社 | 可変容量素子とその制御方法、電子デバイス及び通信モバイル機器 |
UA84117C2 (ru) | 2008-04-17 | 2008-09-10 | Генрик Генрикович Шуминский | Устройство для получения электрической энергии |
JP2009263166A (ja) * | 2008-04-25 | 2009-11-12 | Kyocera Corp | 誘電体磁器およびその製造方法 |
WO2011091709A1 (zh) * | 2010-01-28 | 2011-08-04 | 复旦大学 | 铁电阻变存储器及其操作方法、制备方法 |
KR101769459B1 (ko) * | 2011-08-10 | 2017-08-21 | 삼성전자주식회사 | 나노 발전 소자 및 그 제조 방법 |
CN203800041U (zh) | 2014-01-28 | 2014-08-27 | 天津师范大学 | 一种多层膜结构的多源调控的阻变存储器 |
-
2016
- 2016-04-18 UA UAA201604279A patent/UA115716C2/uk unknown
-
2017
- 2017-04-11 EP EP17786267.9A patent/EP3446321A4/en active Pending
- 2017-04-11 EA EA201800571A patent/EA036556B1/ru not_active IP Right Cessation
- 2017-04-11 US US16/077,393 patent/US20190044457A1/en not_active Abandoned
- 2017-04-11 WO PCT/UA2017/000038 patent/WO2017184102A1/en active Application Filing
- 2017-04-11 JP JP2018555529A patent/JP7096165B2/ja active Active
- 2017-04-11 CN CN201780024300.5A patent/CN109155193B/zh active Active
- 2017-04-11 KR KR1020187033248A patent/KR102466906B1/ko active IP Right Grant
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1276629A (zh) * | 1999-06-04 | 2000-12-13 | 国际商业机器公司 | 具有内部氧源的铁电随机存储单元及释放氧的方法 |
JP2006108290A (ja) * | 2004-10-04 | 2006-04-20 | Seiko Epson Corp | 電極膜、圧電素子、強誘電体キャパシタ及び半導体装置 |
US20060214204A1 (en) * | 2005-03-23 | 2006-09-28 | Dong-Chul Yoo | Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same |
CN101558510A (zh) * | 2006-09-26 | 2009-10-14 | Tti联合有限责任公司 | 发电机 |
UA85360C2 (uk) * | 2008-10-03 | 2009-01-12 | Генрик Генрикович Шуминский | Статичний генератор електричної енергії |
CN101860261A (zh) * | 2010-03-26 | 2010-10-13 | 辽宁师范大学 | 一种逆压电纳米半导体发电机 |
CN102751094A (zh) * | 2011-04-22 | 2012-10-24 | 中国科学院微电子研究所 | 一种基于欧姆接触的铁电薄膜电容及其制备方法 |
CN102832266A (zh) * | 2012-09-07 | 2012-12-19 | 苏州大学 | 铁电光伏器件及其制备方法 |
US20150364682A1 (en) * | 2013-01-16 | 2015-12-17 | Helmholtz-Zentrum Dresden-Rossendorf E.V. | Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence |
CN104992992A (zh) * | 2015-06-08 | 2015-10-21 | 常熟苏大低碳应用技术研究院有限公司 | 一种铁电薄膜太阳能电池 |
Non-Patent Citations (3)
Title |
---|
朱建国等: "《电子与光电子材料》", 31 August 2007, 国防工业出版社 * |
李标荣等编著: "《无机介电材料》", 31 December 1980, 国防工业出版社 * |
罗绍华等: "《材料科学研究与工程技术系列丛书 功能材料》", 31 December 2014, 东北大学出版社 * |
Also Published As
Publication number | Publication date |
---|---|
EP3446321A4 (en) | 2019-12-25 |
EA201800571A1 (ru) | 2019-03-29 |
CN109155193B (zh) | 2022-02-08 |
UA115716C2 (uk) | 2017-12-11 |
JP2019520695A (ja) | 2019-07-18 |
KR102466906B1 (ko) | 2022-11-11 |
WO2017184102A1 (en) | 2017-10-26 |
US20190044457A1 (en) | 2019-02-07 |
JP7096165B2 (ja) | 2022-07-05 |
EA036556B1 (ru) | 2020-11-23 |
KR20180129956A (ko) | 2018-12-05 |
EP3446321A1 (en) | 2019-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6297754B2 (ja) | ドープされたバッファ領域を有する遷移金属酸化物抵抗スイッチングデバイス | |
Wijeratne et al. | Poly (3, 4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) electrodes in thermogalvanic cells | |
JP6854100B2 (ja) | 二次電池 | |
CN100533783C (zh) | 特征在于氧化还原电极的电子连接设备 | |
Sun et al. | Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor | |
US9997777B2 (en) | Electrochemical device electrode including cobalt oxyhydroxide | |
Matsushita et al. | Redox reactions by thermally excited charge carriers: towards sensitized thermal cells | |
CN109155193A (zh) | 发电机 | |
JP6735568B2 (ja) | セルスタックの製造方法 | |
JPH11219710A (ja) | 固体電解質型燃料電池の電極およびその製造方法 | |
KR100734060B1 (ko) | LiPON을 보호막으로 갖는 LLT계 고체 전해질 및 그제조방법 | |
KR20200100741A (ko) | 활성물질 및 이를 함유하는 전력 발생기 | |
US2821490A (en) | Titanate rectifiers | |
US11848423B2 (en) | Semi-solid battery with recharging capability | |
US11302967B2 (en) | Low-voltage microbattery | |
JP2018045909A (ja) | アルカリ二次電池の正極用基板、アルカリ二次電池の正極用基板の製造方法及びアルカリ二次電池 | |
JP2021089901A (ja) | 二次電池 | |
KR20180009966A (ko) | 나노다이아몬드 유래 양파모양탄소를 이용한 레독스 흐름 전지용 전극, 이를 포함하는 레독스 흐름 전지 및 이의 제조 방법 | |
KR100614680B1 (ko) | 전지용 집전체-양극 일체형 금속-금속황화물 소자 | |
CN116023808A (zh) | 一种防护涂层及其制备方法 | |
EP4167462A1 (en) | Chemo-electronic converter based on zro2 - 3 mol% y2o3 nanopowders | |
CN112736281A (zh) | 固体电解质-正极组件和其制造方法、二次电池和其制造方法、及二次电池的电解质层 | |
KR101056045B1 (ko) | 리튬/니켈 전지 | |
Wang et al. | Influence of Process Parameters on Resistive Switching in MOCVD NiO Films | |
JPH0536437A (ja) | アルカリ蓄電池の初期充放電の方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 40001569 Country of ref document: HK |
|
GR01 | Patent grant | ||
GR01 | Patent grant |