CN1090089A - The method for making of passivated double polar body crystal grain of cylinder glass - Google Patents
The method for making of passivated double polar body crystal grain of cylinder glass Download PDFInfo
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- CN1090089A CN1090089A CN 93120319 CN93120319A CN1090089A CN 1090089 A CN1090089 A CN 1090089A CN 93120319 CN93120319 CN 93120319 CN 93120319 A CN93120319 A CN 93120319A CN 1090089 A CN1090089 A CN 1090089A
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Abstract
The present invention relates to a kind of method for making of passivated double polar body crystal grain of cylinder glass.The operation sequence of method for making of the present invention is: diffusion wafer lining photoresist, exposure and development, etched trench, removal photoresist, the cleaning of grid layer, the lining of glass dust grid layer, high temp glassization, nickel plating and sintering, liner and round iron sheet location gummed, sandblast and separation circle crystal grain promptly obtain passivated double polar body crystal grain of cylinder glass.The inventive method need not hindered plane of crystal through the immersion of multiple repeatedly chemical agent, obtains stable, the circular diode crystal grain that does not have the tip of electrical characteristics.
Description
The present invention relates to semiconductor applications, particularly the method for making of passivated double polar body crystal grain of cylinder glass.
Method for making by general traditional diode crystal grain is to adopt the straight line interlace mode to cut into some grid-like crystal grain with the wafer that laser is finished circuit design, and then uses various chemical medicaments just to finish through repeatedly soaking.The method for making of this kind diode crystal grain has following shortcoming:
1) crystal grain finished of cutting must can be finished the making of diode, not only complex procedures, and serious environment pollution through the immersion of various chemical medicaments repeatedly;
2) again because the crystal grain finished of cutting must can be finished making through the immersion of various chemical medicaments repeatedly, therefore, make the grain surface that completes injured easily, and diode finished product bad order rate is heightened;
3) cutting the crystal grain of finishing is the square shape, and therefore, discharge process takes place its four the top of the horns end easily, thereby makes it electrically unstable, can't use on the high electric equipment of precision requirement.
For improving the various shortcomings of above-mentioned traditional diode crystal grain method for making, the inventor has this industry experience for many years of being engaged in, and through repeatedly constantly studying intensively and testing, the inventive method is designed in development finally.
The object of the invention is: the method for making that a kind of passivated double polar body crystal grain of cylinder glass is provided, this method for making makes need not be through the immersion of multiple repeatedly chemical agent in back segment assembling manufacture process, do not hinder plane of crystal, obtain that electrical characteristics are stable, circular no most advanced and sophisticated diode crystal grain, and attenuating is to the pollution of environment.
The present invention seeks to reach like this: after expanding one deck photoresist that is covered on the number wafer, dry; Be covered with the light shield that one deck is provided with some transparent ring in the top in the P of said wafer face upper end, this wafer that is covered with light shield is placed on the sheet glass clamps, send in the exposure machine sensitization and with developing liquid developing; Wafer after developing partly is etched to the N of wafer lower floor with acid solution erosion agent in sensitization not
+Part forms groove; The wafer that etching is finished immerses in the mixed liquor of hydrogen peroxide and sulfuric acid, removes photoresist; The wafer of removing photoresist changed in the deionized water clean, remove the mixed liquor on surface, the grid layer is manifested, dewater then, dry; Fully tamp in the circular groove that etching is finished with glass paste; In quartz ampoule, 720 ℃ of following sintering 1 hour clean; In electroless-plating liquid after the nickel plating, in quartz ampoule, sintering under 650 ℃ and the logical blanket of nitrogen, nickel plating is once again; The glass liner that the upper end is equipped with one deck Chinese wax places on the electric hot plate, make Chinese wax be molten, wafer 1N face after the secondary nickel plating is cemented in melt surface to be had on the glass liner of Chinese wax, and make whole of Chinese wax cover wafers, to glue the adhesive tape that is provided with some roundlet iron plates more in advance and correctly paste driving fit on wafer by Chinese wax, this adhesive tape side is stained with area and is slightly larger than the roundlet iron plate that wafer 1 is not inserted each end face of glass paste, when making the sticking adhesive tape sticking driving fit that is provided with some roundlet iron plates on wafer respectively this roundlet iron plate just can closely connectedly one by one not insert on the end face of glass paste in wafer P face, taking off this upper end cementation from electric hot plate has round iron sheet and lower end cementation that the wafer of glass liner is arranged, move on the flat board of natural cooling and cool off, tear cooled wafer off adhesive tape, send into sandblast in the sand-blasting machine; Sandblast is for the sticking one side sandblast that is provided with the roundlet iron plate of wafer, after finishing, sandblast on the glass liner, forms many small circular crystal grain, this glass liner is immersed in the trichloroethanes with many small circular crystal grain cleans, separate, dewater, and with magnet with the sucking-off of roundlet iron plate, promptly get passivated double polar body crystal grain of cylinder glass, thereby the object of the invention has just reached fully.
The present invention is described in detail below in conjunction with accompanying drawing.
Accompanying drawing 3 is the schematic diagram of diffusion wafer behind exposure imaging.
Accompanying drawing 4 is the schematic perspective view of diffusion wafer after etching.
Accompanying drawing 5 fills up the schematic diagram of glass paste for the diffusion wafer in the formed grid layer after etching.
Accompanying drawing 6 is the schematic diagram after the nickel plating of diffusion wafer.
Schematic perspective view when accompanying drawing 7 sticks on diffusion wafer on the tram each roundlet iron plate for desire.
Accompanying drawing 8 is for spreading the generalized section after glue together wafer and glass liner and each small circular iron plate location.
Accompanying drawing 9 by through after the sandblast the generalized section of the cylindric crystal grain of formation.
Relevant parts corresponding as follows among label and the present invention in the accompanying drawing:
The inventive method operation sequence can be consulted calcspar shown in the accompanying drawing 1.Its operation sequence is: the etched trench of a) exposure of diffusion wafer lining photoresist → b) and developing → c) → d) removes the grid layer of photoresist → e) and cleans → f) glass dust grid layer lining → and the g) sandblast of the liner of the nickel plating of high temp glassization → h) and sintering → i) and round iron sheet location gummed → j) and separate circle crystal grain, following division is as follows:
A) diffusion wafer lining photoresist
Preestablish the rotary speed of baking box and photoresist is ready for, the diffusion wafer 1 that cleaning is finished places on the wafer basket support, putting into baking box oven dry (half an hour is until 100 ℃) back again takes out, with this diffusion wafer 1 that toasted photoresist 2 that is covered piecewise, but the P face and the N face of wafer all need have obvious mark, as a means of identification.The habitual photoresist of used photoresist system is made up of the two-fold nitride of polyisoprene, ethylbenzene and aromatic series of dimethylbenzene, cyclisation.First-class photoresistance is carved 2 wafer place in about 75 ℃ baking box baking to take out after half an hour approximately, can change next step over to: exposure and developing, the wafer of gained lining photoresist is as shown in Figure 2;
B) exposure and development
C) etched trench
Ready mixed acid is inserted in the acid tank, and this mixed acid is mixed by 9 parts of nitric acid, 9 parts of glacial acetic acid, 14 parts of hydrofluoric acid and 4 parts of sulfuric acid and forms, and makes mixed acid remain on about 10 ℃; Take out being placed on the wafer 1 that finishes that developed on the basket support, and whole basket is put into 10 ℃ acid tank, about 5 minutes of etching moulding, take out subsequently and bath in time, after promptly soaking 5～10 minutes in the tank that flows, the part outside these transparent ring 5 sensitization positions at light shield 3, wafer 1 upper end after bath is soaked promptly presents etched groove 6, as shown in Figure 4, the sampling and testing etch depth reaches the N of wafer lower floor up to the degree of depth of this groove 6
+Part, wafer i.e. no longer etching, enters subsequently to remove the photoresist step;
D) remove photoresist
The wafer 1 that etching is finished immerses in hydrogen peroxide and the sulfuric acid mixture liquid, and sulfuric acid is 37: 1 to the hydrogen peroxide ratio in this intermixture, removes the photoresist that is covered on this wafer 1 surface;
E) the grid layer cleans
The wafer 1 of removing photoresist is washed in deionized water to remove its surperficial mixed liquor, the grid layer is manifested, this wafer 1 was shaken 5 minutes in high-frequency ultrasonic wave, go up appended moisture content so that remove wafer 1 surface, do 5 minutes dehydration concussion later on again with isopropyl alcohol, wafer 1 after the dehydration with 100 ℃ of temperature oven dry, is finished the grid layer and is cleaned on electric hot plate;
F) glass dust grid layer lining
As shown in Figure 5, get ready in advance and add appropriate amount of deionized water by glass dust and add 5% binding agent again and fully stir and form glass paste 7, behind supine wafer 1 cleaning, drying of P, the scraping blade made from flexible plastic (polyurethanes) fully tamps glass paste in the circular groove 6 that etching is finished, and the surface of wafer 1 is kept clean, the wafer 1 of filling in glass paste 7 is placed on the wafer basket support, changes next step over to;
G) high temp glassization
At first make diffusion quartz tube be in 720 ℃ of states, and after the control program that will toast the automatic push-and-pull time configures, the quartzy frame that is placed with wafer 1 is put into this quartz ampoule carry out sintering, start push button after buckling automatic pull bar, logical nitrogen in this quartz ampoule, influence its electrical characteristic to prevent the wafer oxidation, when wafer sintering after about 1 hour, glass paste 7 can be finished high temp glassization, this wafer 1 of finishing after the high temp glassization is taken out, and clean with wiping after, can carry out nickel plating and sintering program;
H) nickel plating and sintering
In advance known electroless-plating liquid is prepared, and be heated to 75 ℃; After the wafer 1 surperficial activation processing in advance of having finished high temp glassization season, be placed on the nickel plating basket support, in electroless-plating liquid, carry out the 1st nickel plating, taking out the back cleans in water, in isopropanol bath, dewater again, on electric hot plate, dry again, again with its folded be sandwiched on the wafer basket support after, inserting the interior logical nitrogen sintering of about 650 ℃ sintered quartz pipe takes out after about 1 hour, again with the wafer behind this sintering 1 again nickel plating once (secondary nickel plating) form nickel coating 8, see accompanying drawing 6, can carry out subsequent processing: liner and round iron sheet location gummed;
I) liner and round iron sheet location gummed
Shown in accompanying drawing 7 and 8, glass liner 10 is placed on about 120 ℃ electric hot plate 9, and make Chinese wax 11 be fused to the surface of this liner 10 in right amount, and the wafer 1N face after the secondary nickel plating cemented on the glass liner 10 of surperficial melting Chinese wax 11, also make Chinese wax 11 dissolve the surface that covers monoblock wafer 1 simultaneously, in addition, make at the sticking adhesive tape 13 that is provided with some roundlet iron plates 12 of bottom side and pass through Chinese wax 11 cementation driving fit correctly in wafer 1 upper end, this adhesive tape 13 is provided with area and is slightly larger than the roundlet iron plate 12 that wafer 1 is not inserted glass paste 7 each end face in that bottom side is sticking, so that the sticking adhesive tape 13 that is provided with some roundlet iron plates 12 is pasted driving fits on wafer 1 time, respectively this roundlet iron plate 12 just can closely connectedly one by one not inserted on the end face of glass paste 7 in wafer 1P face, like this, can increase the weight of in each roundlet iron plate 12 upper end, make each roundlet iron plate 12 closer with the bonding of wafer 1, take off the wafer 1 that round iron sheet 12 that this upper end cementation has and lower end cementation have glass liner 10 from heating plate subsequently, move on the flat board of natural cooling and cool off, tear the wafer 1 of cooling off adhesive tape 13, send into sandblast in the sand-blasting machine;
J) sandblast and separation circle crystal grain
The sticking one side that is provided with roundlet iron plate 12 in wafer 1 surface is carried out sandblast; after sandblast is finished; should check whether the be not sticked position of roundlet iron plate 12 of this wafer 1 has been blown spray and worn; when wearing as spraying; can obviously see many wafer 1 parts that are subjected to 12 protections of roundlet iron plate and do not fallen from glass liner 10 by spray; to wear the wafer that is small cylindrical that stays partly be exactly the passivated double polar body crystal grain of cylinder glass 14 that the present invention desires to make through blowing for these; (as shown in Figure 9); after treating that the sandblast step is finished; left glass liner 10 is finished in sandblast to be immersed in the trichloroethanes with many crystal grain 14 and cleans; separate; re-using supersonic oscillations removes the moisture content on crystal grain 14 surfaces; and with magnet roundlet iron plate 12 is inhaled and to be gone, what stay is the circular crystal grain 14 that periphery is coated with glass.
The invention provides a kind of method for making of passivated double polar body crystal grain of cylinder glass, method for making of the present invention need not hindered the crystal top layer, and can reduce environmental pollution through the immersion of multiple repeatedly chemical agent, and the rounded nothing of crystal grain is most advanced and sophisticated, thereby the electrical characteristic of crystal grain is stable.Features simple and practical process has value on the industry.
Claims (5)
1, a kind of method for making of circular slab glassivation diode crystal grain is characterized in that having the following step:
A) drying behind lining one deck photoresist on the diffusion wafer;
B) exposure and develop: be covered with the light shield that one deck is provided with some transparent ring in the top in the P of said wafer face upper end, this wafer that is covered with light shield is placed on the sheet glass clamps, send into exposure machine sensitization and with developing liquid developing;
C) etched trench: the wafer after will developing is etched in not sensitization with acid solution and partly is etched to the N of wafer lower floor
+Part forms groove;
D) remove photoresist: the wafer that etching is finished immerses in hydrogen peroxide and the sulfuric acid mixture liquid, removes photoresist;
E) the grid layer cleans: the wafer that will remove photoresist cleans in deionized water, removes its surperficial mixed liquor, and the grid layer is manifested, and dewaters then, dries;
F) glass dust grid layer lining: fully tamp in the circular groove that etching is finished with glass paste;
G) high temp glassization: in quartz ampoule, about 1 hour of 720 ℃ of following sintering clean;
H) nickel plating and sintering: in electroless-plating liquid after the nickel plating, in quartz ampoule, sintering under 650 ℃ and the logical blanket of nitrogen, nickel plating is once again;
I) liner and round iron sheet location gummed: the glass liner that the upper end is equipped with one deck Chinese wax places on the electric hot plate, make Chinese wax be molten, wafer 1N face after the secondary nickel plating is cemented in melt surface to be had on the glass liner of Chinese wax, and make whole of Chinese wax cover wafers, to glue the adhesive tape that is provided with some roundlet iron plates more in advance and correctly paste driving fit on wafer by Chinese wax, taking off this upper end cementation from electric hot plate has round iron sheet and lower end cementation that the wafer of glass liner is arranged, move on the flat board of natural cooling and cool off, cooled wafer is torn out adhesive tape, send into sandblast in the sand-blasting machine;
J) sandblast and separation circle crystal grain: the sticking one side that is provided with the roundlet iron plate of wafer surface is carried out sandblast, after sandblast is finished, on the glass liner, form many small circular crystal grain, this glass liner and a lot of small circular crystal grain is immersed in the trichloroethanes cleans, separate, and with magnet with the sucking-off of roundlet iron plate, promptly get the peripheral rod-like crystal that is coated with glass.
2, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at c) used etching acid solution is mixed by 9 parts of nitric acid, 9 parts of glacial acetic acid, 14 parts of hydrofluoric acid and 4 parts of sulfuric acid in the step.
3, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at d) remove that sulfuric acid and hydrogen peroxide ratio are 37: 1 in the mixed liquor that photoresist uses in the step.
4, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at f) said glass paste adds deionized water by glass dust and adds 5% bonding agent again and fully stir and form in the step.
5, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at i) this adhesive tape is provided with some areas and is slightly larger than the roundlet iron plate that wafer is not inserted each end face of glass paste in that bottom side is sticking in the step, so that the sticking adhesive tape sticking driving fit that is provided with some roundlet iron plates is on wafer the time, respectively this roundlet iron plate just can closely connectedly one by one not inserted on the end face of glass paste in wafer P face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93120319 CN1032887C (en) | 1993-06-26 | 1993-12-03 | Method for making passivated double polar body crystal grain of cylinder glass |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN93107505.X | 1993-06-26 | ||
| CN 93107505 CN1082253A (en) | 1993-06-26 | 1993-06-26 | The method for making of passivated double polar body crystal grain of cylinder glass |
| CN93107505,X | 1993-06-26 | ||
| CN 93120319 CN1032887C (en) | 1993-06-26 | 1993-12-03 | Method for making passivated double polar body crystal grain of cylinder glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1090089A true CN1090089A (en) | 1994-07-27 |
| CN1032887C CN1032887C (en) | 1996-09-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93120319 Expired - Fee Related CN1032887C (en) | 1993-06-26 | 1993-12-03 | Method for making passivated double polar body crystal grain of cylinder glass |
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| Country | Link |
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| CN (1) | CN1032887C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320405C (en) * | 2003-12-29 | 2007-06-06 | 中芯国际集成电路制造(上海)有限公司 | Light shield processor and method for processing light shield using same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100338742C (en) * | 2004-07-29 | 2007-09-19 | 上海华虹Nec电子有限公司 | Method for increasing evenness of etching channels in semiconductor |
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1993
- 1993-12-03 CN CN 93120319 patent/CN1032887C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320405C (en) * | 2003-12-29 | 2007-06-06 | 中芯国际集成电路制造(上海)有限公司 | Light shield processor and method for processing light shield using same |
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| Publication number | Publication date |
|---|---|
| CN1032887C (en) | 1996-09-25 |
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