CN108911728A - 一种具有低介电常数的钙钴硅微波介质陶瓷 - Google Patents

一种具有低介电常数的钙钴硅微波介质陶瓷 Download PDF

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CN108911728A
CN108911728A CN201810798144.4A CN201810798144A CN108911728A CN 108911728 A CN108911728 A CN 108911728A CN 201810798144 A CN201810798144 A CN 201810798144A CN 108911728 A CN108911728 A CN 108911728A
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microwave
medium ceramics
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cobalt silicon
calcium cobalt
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肖谧
韦艳双
娄捷
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Tianjin University
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
    • C04B35/22—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay rich in calcium oxide, e.g. wollastonite
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
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    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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Abstract

本发明公开了一种具有低介电常数的钙钴硅微波介质陶瓷及其制备方法，其原料组成为CaCoSi2O6。按照配料、一次球磨、干燥、过筛、1100℃预烧、二次球磨、造粒、压制成型为坯体，坯体于在排蜡时于550℃保温90～300min，然后升温到1125～1200℃烧结2小时，制得低介电常数的钙钴硅微波介质陶瓷。本发明成功地获得了介电常数约为4.6～7.2、Q×f最高可达到12456.9GHz、谐振频率温度系数接近于0的低介电常数微波介质陶瓷。本发明制备工艺简单，过程无污染，是一种很有前途的微波介质材料。

Description

一种具有低介电常数的钙钴硅微波介质陶瓷
技术领域
本发明属于一种以成分为特征的陶瓷组合物，特别涉及一种在不同的温度下烧结、最后获得具有低介电常数的钙钴硅微波介电陶瓷及其制备方法。
背景技术
随着微波通信技术和雷达系统的发展，以往的通信频带已不能满足现代通信的需要。微波技术正朝着毫米波、亚毫米波等更高频率的方向发展。低介电常数微波介质陶瓷材料可广泛应用于卫星通讯，导弹遥控和全球卫星定位系统天线等，这些领域要求陶瓷具有较小的介电常数和较低的谐振频率温度系数。为了减少毫米波、亚毫米波中的信号延迟现象，提高信息的传输速率，具有低的介电常数的微波介质陶瓷的发展和研究受到越来越多的关注。
硅酸盐系微波介质陶瓷由于具有正四面体([SiO4]4-)的框架结构，在此框架结构中，离子键占45％，共价键占55％，受强度大的共价键的影响，材料的介电常数很低，因而引起了大家广泛的研究。本发明采用传统固相法来制备纯相的钙钴硅微波介质陶瓷，获得了很低的介电常数的微波介电性能。
发明内容
本发明的目的，是在现有技术的基础上，以CaCO3、CoCO3、SiO2作为原料，制备出更低介电常数的钙钴硅微波介质陶瓷。
本发明通过如下技术方案予以实现：
一种具有低介电常数的钙钴硅微波介质陶瓷，其组成为CaCoSi2O6。
上述钙钴硅微波介质陶瓷的制备方法，具有以下步骤：
(1)将CaCO3、CoCO3、SiO2作为原料，按化学式CaCoSi2O6进行配料，将粉料放入球磨罐中，加入去离子水及氧化锆球，球磨8小时；
(2)将步骤(1)球磨后的原料置于110℃烘干，待原料烘干后过40目筛，获得颗粒均匀的粉料；
(3)将步骤(2)混合均匀的粉料装入坩埚后在1100℃下预烧2小时；
(4)在步骤(3)预烧后的陶瓷粉料放入球磨罐中，加入去离子水与氧化锆球，二次球磨8小时，并于110℃温度烘干；烘干后在陶瓷粉料中外加15％重量百分比的石蜡进行造粒，过60目筛，再压制成坯体；
(5)将步骤(4)的坯体缓慢升温至550℃排蜡，然后在550℃下保温90～300min，于1125～1200℃烧结，保温2小时，制得钙钴硅微波介质陶瓷。
所述步骤(1)的CaCO3、CoCO3、SiO2原料的质量纯度大于99.9％。
所述步骤(4)采用粉末压片机压制成坯体，压力为6Mpa。
所述步骤(5)中在550℃下保温180min,于1175℃烧结。
本发明以CaCO3、CoCO3、SiO2为原料，成功地获得了低介电常数微波介电性能的微波介质陶瓷：在1175℃下烧结2小时，其品质因数达到12456.9GHz，介电常数为5～6，谐振频率温度系数为-18.91ppm/℃。本发明的制备工艺简单，过程无污染，微波介电性能优异，是一种很有前途的低介微波介质材料。
具体实施方式
本发明采用纯度大于99.9％的化学原料CaCO3、CoCO3、SiO2，制备CaCoSi2O6微波介质陶瓷。具体步骤如下。
1.依照微波介质陶瓷组分CaCoSi2O6，称CaCO3-5.9013g、CoCO3-7.0128g、SiO2-7.0859g配料，共20g；混合粉料加入球磨罐中，加入160ml去离子水和150g锆球后，在行星式球磨机上球磨8小时，球磨机转速为1000转/分；
2.将球磨后的原料置于110℃温度条件下烘干，过40目筛，获得颗粒均匀的粉料；
3.将颗粒均匀的粉料于1100℃予烧2小时；
4.将煅烧后的粉料放入球磨罐中，加入去离子水和氧化锆球，二次球磨8小时，出料后在110℃温度条件下烘干，然后加入15％重量百分比的石蜡进行造粒，并过60目筛；再用粉末压片机以6Mpa的压力压成直径为15mm，厚度为7.5mm的坯体；
5.将坯体缓慢升温至550℃排蜡，然后在550℃下保温90～300min，于1125～1200℃烧结，保温2小时，制得钙钴硅微波介质陶瓷。
最后，通过网络分析仪及相关测试夹具测试所得制品微波特性。
本发明具体实施例的检测方法如下：
1.样品的直径和厚度使用千分尺进行测量。
2.借助Agilent 8720ES网络分析仪，采用开始抢平行板法测量所制备圆柱形陶瓷材料的介电常数，将测试夹具放入ESPEC MC-710F型高低温循环温箱进行谐振频率温度系数的测量，温度范围为25-85℃测试频率在6-15GHz范围内。
3.采用闭式腔法测量所制备圆柱形陶瓷样品的品质因数，测试频率在5-15GHz范围内。
本发明具体实施例的各项关键参数及介电性能检测结果详见表1。
表1

Claims (4)

1.一种具有低介电常数的钙钴硅微波介质陶瓷，其组成为CaCoSi2O6。
上述钙钴硅微波介质陶瓷的制备方法，具有以下步骤：
(1)将CaCO3、CoCO3、SiO2作为原料，按化学式CaCoSi2O6进行配料，将粉料放入球磨罐中，加入去离子水及氧化锆球，球磨8小时；
(2)将步骤(1)球磨后的原料置于110℃烘干，待原料烘干后过40目筛，获得颗粒均匀的粉料；
(3)将步骤(2)混合均匀的粉料装入坩埚后在1100℃下预烧2小时；
(4)在步骤(3)预烧后的陶瓷粉料放入球磨罐中，加入去离子水与氧化锆球，二次球磨8小时，并于110℃温度烘干；烘干后在陶瓷粉料中外加15％重量百分比的石蜡进行造粒，过60目筛，再压制成坯体；
(5)将步骤(4)的坯体缓慢升温至550℃排蜡，然后在550℃下保温90～300min，于1125～1200℃烧结，保温2小时，制得钙钴硅微波介质陶瓷。
2.根据权利要求1的一种具有低介电常数的钙钴硅微波介质陶瓷，其特征在于，所述步骤(1)的CaCO3、CoCO3、SiO2原料的质量纯度大于99.9％。
3.根据权利要求1的一种具有低介电常数的钙钴硅微波介质陶瓷，其特征在于，所述步骤(4)采用粉末压片机压制成坯体，压力为6Mpa。
4.根据权利要求1的一种具有低介电常数的钙钴硅微波介质陶瓷，其特征在于，所述步骤(5)中在550℃下保温180min,于1175℃烧结。
CN201810798144.4A 2018-07-19 2018-07-19 一种具有低介电常数的钙钴硅微波介质陶瓷 Pending CN108911728A (zh)

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Citations (2)

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Publication number Priority date Publication date Assignee Title
CN101215160A (zh) * 2007-12-29 2008-07-09 天津大学 一种超高介、低损耗的高频介质陶瓷及其制备方法
CN103864418A (zh) * 2014-02-27 2014-06-18 天津大学 高介电常数超宽工作温度的陶瓷电容器介质的制备方法

Patent Citations (2)

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CN101215160A (zh) * 2007-12-29 2008-07-09 天津大学 一种超高介、低损耗的高频介质陶瓷及其制备方法
CN103864418A (zh) * 2014-02-27 2014-06-18 天津大学 高介电常数超宽工作温度的陶瓷电容器介质的制备方法

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