CN108886363B - 静电放电(esd)隔离输入/输出(i/o)电路 - Google Patents

静电放电(esd)隔离输入/输出(i/o)电路 Download PDF

Info

Publication number
CN108886363B
CN108886363B CN201780019706.4A CN201780019706A CN108886363B CN 108886363 B CN108886363 B CN 108886363B CN 201780019706 A CN201780019706 A CN 201780019706A CN 108886363 B CN108886363 B CN 108886363B
Authority
CN
China
Prior art keywords
transistor
driver
circuit
coupled
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780019706.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN108886363A (zh
Inventor
E·R·沃莱
R·贾里泽纳里
S·邓迪加
W-Y·陈
K·C·奇拉拉
T·康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN108886363A publication Critical patent/CN108886363A/zh
Application granted granted Critical
Publication of CN108886363B publication Critical patent/CN108886363B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H03K19/018528—Interface arrangements of complementary type, e.g. CMOS with at least one differential stage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018592—Coupling arrangements; Interface arrangements using field effect transistors only with a bidirectional operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M9/00—Parallel/series conversion or vice versa

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201780019706.4A 2016-03-31 2017-01-25 静电放电(esd)隔离输入/输出(i/o)电路 Active CN108886363B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/088,035 US10298010B2 (en) 2016-03-31 2016-03-31 Electrostatic discharge (ESD) isolated input/output (I/O) circuits
US15/088,035 2016-03-31
PCT/US2017/014949 WO2017172002A1 (en) 2016-03-31 2017-01-25 Electrostatic discharge (esd) isolated input/output (i/o) circuits

Publications (2)

Publication Number Publication Date
CN108886363A CN108886363A (zh) 2018-11-23
CN108886363B true CN108886363B (zh) 2022-01-14

Family

ID=58010398

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780019706.4A Active CN108886363B (zh) 2016-03-31 2017-01-25 静电放电(esd)隔离输入/输出(i/o)电路

Country Status (10)

Country Link
US (1) US10298010B2 (https=)
EP (1) EP3437193B1 (https=)
JP (1) JP6687753B2 (https=)
KR (1) KR102057111B1 (https=)
CN (1) CN108886363B (https=)
BR (1) BR112018069912B1 (https=)
CA (1) CA3016016C (https=)
ES (1) ES2883349T3 (https=)
TW (1) TWI672905B (https=)
WO (1) WO2017172002A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10936333B2 (en) 2018-02-28 2021-03-02 Forcepoint Llc System and method for managing system configuration data models
CN110504251B (zh) * 2018-05-18 2021-12-24 世界先进积体电路股份有限公司 集成电路以及静电放电保护电路
US11088541B2 (en) 2018-09-07 2021-08-10 Vanguard International Semiconductor Corporation Integrated circuit and electrostatic discharge protection circuit thereof
CN110137171B (zh) * 2019-05-16 2024-07-19 北京集创北方科技股份有限公司 指纹传感装置及电子设备
TWI706619B (zh) * 2019-05-16 2020-10-01 大陸商北京集創北方科技股份有限公司 具增強靜電放電保護的指紋感測模塊及電子裝置
DE102020132568A1 (de) * 2020-03-31 2021-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Esd-schutzschaltung zum und zugehöriges betriebsverfahren
JP7408595B2 (ja) * 2021-03-30 2024-01-05 株式会社東芝 保護回路
CN113985163B (zh) * 2021-10-15 2024-04-30 深圳市爱协生科技股份有限公司 Esd检测电路、集成电路及电子设备
CN116203308B (zh) * 2021-11-30 2025-10-31 澜起科技股份有限公司 静电放电和电过载的探测电路
US12439702B2 (en) * 2022-05-09 2025-10-07 Nxp B.V. Electrostatic discharge protection for wireless device
US11923764B1 (en) * 2022-08-10 2024-03-05 Texas Instruments Incorporated Electrostatic discharge circuit for switching mode power supply
US20260066646A1 (en) * 2024-09-04 2026-03-05 Taiwan Semiconductor Manufacturing Company Ltd. Electrostatic discharge (esd) protection circuit using tie-cell technique

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0482336A1 (en) * 1990-09-25 1992-04-29 National Semiconductor Corporation Switchable transceiver interface device
CN1145143A (zh) * 1994-03-28 1997-03-12 英特尔公司 采用偏置和端接的pnp晶体管链的静电放电保护电路
US5780897A (en) * 1995-11-13 1998-07-14 Digital Equipment Corporation ESD protection clamp for mixed voltage I/O stages using NMOS transistors
US6624992B1 (en) * 2000-10-06 2003-09-23 Qualcomm, Incorporated Electro-static discharge protection circuit
CN101097917A (zh) * 2006-06-28 2008-01-02 大塚宽治 静电放电保护电路和终端电阻电路
US8339757B2 (en) * 2010-04-19 2012-12-25 Faraday Technology Corp. Electrostatic discharge circuit for integrated circuit with multiple power domain
CN105047663A (zh) * 2014-02-28 2015-11-11 英飞凌科技股份有限公司 具有静电放电保护结构和光子源的集成电路
CN105391041A (zh) * 2012-02-07 2016-03-09 联发科技股份有限公司 静电放电保护电路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785109B1 (en) 2000-01-10 2004-08-31 Altera Corporation Technique for protecting integrated circuit devices against electrostatic discharge damage
US6552583B1 (en) 2001-10-11 2003-04-22 Pericom Semiconductor Corp. ESD-protection device with active R-C coupling to gate of large output transistor
US7026848B2 (en) * 2004-05-18 2006-04-11 Rambus Inc. Pre-driver circuit
US7221551B2 (en) * 2004-06-11 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Cascaded gate-driven ESD clamp
US7102380B2 (en) * 2004-07-07 2006-09-05 Kao Richard F C High speed integrated circuit
JP4986459B2 (ja) 2006-01-24 2012-07-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR20070115093A (ko) 2006-05-30 2007-12-05 삼성전자주식회사 정전 방전 감지회로를 구비한 반도체 장치
US7679878B2 (en) * 2007-12-21 2010-03-16 Broadcom Corporation Capacitor sharing surge protection circuit
JP5363879B2 (ja) * 2009-06-03 2013-12-11 ルネサスエレクトロニクス株式会社 ドライバ回路
US20130010266A1 (en) * 2011-07-05 2013-01-10 Projectiondesign As Compact Projector Head
US8837564B2 (en) * 2011-10-14 2014-09-16 Broadcom Corporation Multi gigabit modem for mmWave point to point links
US8760828B2 (en) 2012-03-08 2014-06-24 Taiwan Semiconductor Manufacturing Co., Ltd. Electro-static discharge clamp (ESD) for NxVDD power rail
US8724271B2 (en) * 2012-03-08 2014-05-13 Globalfoundries Singapore Pte. Ltd. ESD-robust I/O driver circuits
US9219055B2 (en) 2012-06-14 2015-12-22 International Business Machines Corporation Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers
CN105099419B (zh) * 2014-04-16 2018-06-22 钰太芯微电子科技（上海）有限公司 具有静电放电保护功能的功率芯片
KR102140734B1 (ko) * 2014-05-14 2020-08-04 삼성전자주식회사 정전 보호 회로를 포함하는 반도체 장치 및 그것의 동작 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0482336A1 (en) * 1990-09-25 1992-04-29 National Semiconductor Corporation Switchable transceiver interface device
CN1145143A (zh) * 1994-03-28 1997-03-12 英特尔公司 采用偏置和端接的pnp晶体管链的静电放电保护电路
US5780897A (en) * 1995-11-13 1998-07-14 Digital Equipment Corporation ESD protection clamp for mixed voltage I/O stages using NMOS transistors
US6624992B1 (en) * 2000-10-06 2003-09-23 Qualcomm, Incorporated Electro-static discharge protection circuit
CN101097917A (zh) * 2006-06-28 2008-01-02 大塚宽治 静电放电保护电路和终端电阻电路
US8339757B2 (en) * 2010-04-19 2012-12-25 Faraday Technology Corp. Electrostatic discharge circuit for integrated circuit with multiple power domain
CN105391041A (zh) * 2012-02-07 2016-03-09 联发科技股份有限公司 静电放电保护电路
CN105047663A (zh) * 2014-02-28 2015-11-11 英飞凌科技股份有限公司 具有静电放电保护结构和光子源的集成电路

Also Published As

Publication number Publication date
US20170288398A1 (en) 2017-10-05
TW201810949A (zh) 2018-03-16
CA3016016C (en) 2021-02-16
BR112018069912A2 (pt) 2019-02-05
EP3437193A1 (en) 2019-02-06
KR20180127374A (ko) 2018-11-28
JP2019517127A (ja) 2019-06-20
WO2017172002A1 (en) 2017-10-05
CA3016016A1 (en) 2017-10-05
JP6687753B2 (ja) 2020-04-28
KR102057111B1 (ko) 2019-12-18
EP3437193B1 (en) 2021-07-28
BR112018069912B1 (pt) 2023-12-26
CN108886363A (zh) 2018-11-23
US10298010B2 (en) 2019-05-21
TWI672905B (zh) 2019-09-21
ES2883349T3 (es) 2021-12-07

Similar Documents

Publication Publication Date Title
CN108886363B (zh) 静电放电(esd)隔离输入/输出(i/o)电路
KR101885334B1 (ko) 정전기 방전 보호 회로
US9401594B2 (en) Surge protection for differential input/output interfaces
US8189308B2 (en) Integrated circuit
US8958186B2 (en) Mitigating cross-domain transmission of electrostatic discharge (ESD) events
KR20230028300A (ko) 향상된 esd(electrostatic discharge) 강건성을 위한 회로 기법들
US20150043113A1 (en) Esd clamp circuit
EP3683965B1 (en) Switch control circuit for a power switch with electrostatic discharge (esd) protection
KR20230029658A (ko) 향상된 esd(electrostatic discharge) 강건성을 위한 회로 기법들
US9362739B2 (en) Protective circuit, electronic device, and method of driving a protective circuit
US20150084161A1 (en) Mixed mode rc clamps
CN105790753A (zh) 输出缓冲器
US7564665B2 (en) Pad ESD spreading technique
US11322935B2 (en) High speed ESP protection circuit
CN116613158A (zh) 静电放电保护电路及其操作方法
US7477497B2 (en) Apparatus for electrostatic discharge protection of bipolar emitter follower circuits
US20250158390A1 (en) Full-functionality back power protection (bpp) input/output (i/o) circuit with overvoltage protection including electrostatic discharge
WO2011050977A1 (en) Electrostatic discharge protection

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant