CN108886014A - 基座支撑件 - Google Patents

基座支撑件 Download PDF

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CN108886014A
CN108886014A CN201780018465.1A CN201780018465A CN108886014A CN 108886014 A CN108886014 A CN 108886014A CN 201780018465 A CN201780018465 A CN 201780018465A CN 108886014 A CN108886014 A CN 108886014A
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plate
support
support component
equipment
component
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CN108886014B (zh
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理查德·O·柯林斯
埃罗尔·安东尼奥·C·桑切斯
戴维·K·卡尔森
穆罕默德·图鲁尔·萨米尔
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN202310042592.2A priority Critical patent/CN116200821A/zh
Priority to CN202310911111.7A priority patent/CN117107221A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract

本文描述的实施方式一般涉及用于在沉积工艺中支撑基座的基座支撑件。所述基座支撑件包括轴杆；板，所述板具有耦合到轴杆的第一主要表面；和支撑元件，所述支撑元件从板的第二主要表面延伸。所述板可由对来自设置在板下方的多个能量源的辐射能量光学透明的材料制成。所述板可具有足够小以将辐射传输损耗最小化并且足够大以在处理期间热稳定并且机械稳定地支撑基座的厚度。所述板的厚度范围可为约2mm至约20mm。

Description

基座支撑件
背景
技术领域
本文公开用于半导体处理的设备。更具体而言，本文中公开的实施方式涉及一种用于在沉积工艺中支撑基座的基座支撑件。
背景技术
在集成电路的制造中，诸如化学气相沉积(CVD)或外延工艺的沉积工艺被用于在半导体基板上沉积各种材料的膜。外延是在半导体处理中广泛使用以在半导体基板上形成非常薄的材料层的工艺。这些层经常限定半导体装置的一些最小的特征，并且如果需要晶体材料的电特性，那么这些层可具有高品质的晶体结构。通常将沉积前驱物提供至设置有基板的工艺腔室，所述基板被加热到有利于具有特定性质的材料层生长的温度。
传统地，基板设置在基座上，并且基座由三个或更多个臂支撑，这些臂从轴杆延伸。诸如灯的多个能量源可设置在基板下方以加热基板的背侧。基座通常用于将来自能量源的辐射中的任何不均匀性分散出去。来自能量源的辐射被基座支撑臂阻挡，导致基座无法充分地去除不均匀性，造成基板的不均匀加热。
因此，需要用于支撑基座的改进的设备。
发明内容
本文公开的实施方式涉及用于在沉积工艺中支撑基座的基座支撑件。在一个实施方式中，一种设备包括轴杆和板，所述板具有耦合到轴杆的第一主要表面。板包含石英、熔融石英、氧化铝、蓝宝石或氧化钇，并且所述板具有范围是从约2mm至约20mm的厚度。所述设备进一步包括支撑元件，所述支撑元件从板的第二主要表面延伸。
在另一个实施方式中，一种设备包括轴杆和板，所述板具有耦合到轴杆的第一主要表面。板包含石英、熔融石英、氧化铝、蓝宝石或氧化钇。所述设备进一步包括支撑元件，所述支撑元件从板的第二主要表面延伸，并且所述支撑元件具有范围是从约30mm至约60mm的高度。
在另一个实施方式中，工艺腔室包括第一外壳构件、第二外壳构件和基座支撑件。基座支撑件的至少一部分设置在第一外壳构件和第二外壳构件之间。基座支撑件包括轴杆和板，所述板具有耦合到轴杆的第一主要表面。板包含石英、熔融石英、氧化铝、蓝宝石或氧化钇，并且所述板具有范围是从约2mm至约20mm的厚度。所述设备进一步包括支撑元件，所述支撑元件从板的第二主要表面延伸。所述工艺腔室进一步包括多个能量源，这些能量源面向第二外壳构件设置。
附图说明
为了使本公开内容的上述特征可被详细理解，以上简要总结的本公开内容的更具体描述可参考实施方式，其中一些实施方式在附图中图示。然而应注意到，附图仅图示本公开内容的典型实施方式，因此不被认为限制本公开内容的范围，因为本公开内容可允许其他等效的实施方式。
图1是根据本文描述的一个实施方式的工艺腔室的示意性横截面图。
图2A是根据本文描述的一个实施方式的基座支撑件的透视图。
图2B是图2A的基座支撑件的示意性横截面图。
图2C是根据本文描述的一个实施方式的支撑元件的示意性横截面图。
图2D是根据本文描述的一个实施方式的支撑元件的示意性横截面图。
图2E是根据本文描述的一个实施方式的支撑元件的示意性横截面图。
图3A是根据本文描述的另一个实施方式的基座支撑件的透视图。
图3B是根据本文描述的另一个实施方式的基座支撑件的透视图。
图4A是根据本文描述的另一个实施方式的基座支撑件的透视图。
图4B是根据本文描述的另一个实施方式的基座支撑件的透视图。
为了促进理解，已尽可能使用相同的参考数字指定附图共有的相同元件。此外，一个实施方式的元件可有利地适用于本文描述的其他实施方式中。
具体实施方式
本文描述的实施方式一般涉及用于在沉积工艺中支撑基座的基座支撑件。基座支撑件包括轴杆、板和支撑元件，所述板具有耦合到轴杆的第一主要表面，所述支撑元件从所述板的第二主要表面延伸。所述板可由对来自设置在板下方的多个能量源的辐射能量光学透明的材料制成。所述板可具有足够小以将辐射传输损耗最小化并且足够大以在处理期间热稳定并且机械稳定地支撑基座。所述板的厚度范围可为约2mm至约20mm。支撑元件可设置在板上或与板一体成形，并且所述支撑元件可设在基板处理直径之外的板上的一个或多个位置，所述基板处理直径是板在处理期间被设置在基座上的基板大致覆盖的直径。
图1是根据一个实施方式的工艺腔室100的示意性横截面图。工艺腔室100可用于处理一个或多个基板，包括在基板108的沉积表面116上沉积材料。工艺腔室100包括多个能量源102，这些能量源用于加热设置在工艺腔室100内的基板108的背侧104以及其他部件。多个能量源102可以是多个加热灯。基板108可由基座105支撑，基座105由基座支撑件150支撑。基座105可由碳化硅或具有碳化硅涂层的石墨制成。基座支撑件150包括轴杆170、耦合到轴杆170的板172和从板172延伸的支撑元件174。轴杆170在中心耦合到板的第一主要表面171，并且支撑元件174从与第一主要表面171相对的板的第二主要表面173延伸。板172可以是圆盘(disk)，并且板172由对来自设置在板172下方的多个能量源102的辐射能量光学透明的材料制成。光学透明意味着材料使大部分的辐射能量透射，而非常少的辐射能量被反射和/或吸收。在一个实施方式中，板由石英制成，例如熔融石英。在其他实施方式中，板172由氧化铝、蓝宝石或氧化钇制成。
板172可具有足够小以将辐射传输损耗最小化并且足够大以在处理期间热稳定并且机械稳定地支撑基座的厚度。板的厚度范围可为约2mm至约20mm，例如约4mm至约8mm。支撑元件174可在板172的基板处理直径之外的一个或多个位置处设于板172上，所述基板处理直径是板172在处理期间被设置在基座105上的基板108大致覆盖的直径。换言之，支撑元件174不是直接位于基板108下。在一个实施方式中，基板108具有约300mm的直径，支撑元件174在直径大于300mm处位于板172上，例如在直径约310mm至约360mm处位于板172上。板172可具有类似于或大于基座105的直径的直径。在一个实施方式中，板172具有约370mm的直径。相较于传统的基座支撑件，板172提供均匀介质给辐射能量穿过。此外，支撑元件174不直接位于基板108下，因此支撑元件174不阻挡来自多个能量源102的辐射能量到基板108的背侧104。基座105和板172之间的距离D可提供基板108的更均匀的加热。距离D的范围可为约10mm至约60mm，例如约30mm至约60mm，例如约40mm。
基座支撑件150的至少一部分在第一外壳构件128和第二外壳构件114之间位于工艺腔室100内。基板108可通过装载口103被带入工艺腔室100并定位在基座105上。在位于处理位置时，基座105和板172将工艺腔室100的内部空间划分为工艺气体区域156(在基板108和第一外壳构件128之间)和净化气体区域158(在板172和第二外壳构件114之间)。基座支撑件150可在处理期间绕着基座支撑件150的中心轴旋转，以将工艺腔室100内的热和工艺气流的空间异常的影响最小化，并因此有助于基板108的均匀处理。基座支撑件150在装载和卸载期间(并且在一些情况中，在基板108的处理期间)于轴向方向134中移动基座105。
一般而言，第一外壳构件128和第二外壳构件114由光学透明的材料形成，例如石英。第一外壳构件128和第二外壳构件114是薄的，以将热存储(thermal memory)最小化，第一外壳构件128和第二外壳构件114通常具有约3mm和约10mm之间的厚度，例如约4mm。第一外壳构件128可通过将热控制流体(例如冷却气体)通过入口126引入至热控制空间136中并通过出口130排出(withdraw)热控制流体以进行热控制。在一些实施方式中，循环通过热控制空间136的冷却流体可减少第一外壳构件128的内表面上的沉积。第二外壳构件114可具有圆锥形状，以承受工艺腔室100内的真空条件。在一个实施方式中，第二外壳构件114由石英制成，石英是对来自多个能量源102的辐射能量光学透明的。
反射体122可选择性地放置在第一外壳构件128以外，以将从基板108放射的辐射反射回到基板108上。由于反射的辐射，加热的效率将通过包含在其他情况下会离开工艺腔室100的热来改善。反射体122可由金属制成，例如铝、黄铜或不锈钢。
多个能量源102可经适配以将基板108加热至在约200摄氏度至约1400摄氏度的范围内的温度，例如约300摄氏度至约1350摄氏度。多个能量源102可定位在分隔成间的壳体145内。每个能量源102可设置在管143内。可以是高温计的多个热辐射传感器140可设置在壳体145中以用于测量基板108的热发射(thermal emission)。传感器140通常设置在壳体145中的不同位置处，以有助于在处理期间检查基板108的不同位置。从基板108的不同位置感测热辐射有助于比较基板108不同位置处的热能含量，例如温度，以确定是否存在温度异常或不均匀。此类不均匀性可造成膜形成中的不均匀性，例如厚度和组成。通常使用至少两个传感器140，然而可使用两个以上的传感器。不同的实施方式可使用三个、四个、五个、六个、七个或更多个传感器140。
热传感器118可设置在反射体122中来监测第一外壳构件128的热状态，或从相对于传感器140的视点来监测基板108的热状态。此类监测可有助于比较从传感器140接收的数据，例如，以确定从传感器140接收的数据中是否存在错误。热传感器118在一些情况下可以是传感器的组件，呈现具有多于一个的独立传感器。因此，工艺腔室100可呈现经设置以接收从基板的第一侧发射的辐射的一个或多个传感器和经设置以接收来自相对于第一侧的基板的第二侧的辐射的一个或多个传感器。
控制器160从传感器140接收数据，并基于所述数据分别调整传递到每个能量源102或传递到能量源102的独立群组的功率。控制器160可包括电源162，电源162独立地供电给各种能量源102。控制器160可以特定温度分布配置，并且基于比较从传感器140接收的数据，控制器160调整到能量源102的功率，以使所观察到的热数据符合特定的温度分布。
图2A是根据一个实施方式的基座支撑件200的透视图。基座支撑件200可用于图1的工艺腔室100中以代替基座支撑件150。如图2A所示，基座支撑件200包括轴杆170、耦合到轴杆170的板172和从板172延伸的多个支撑元件203。在一个实施方式中，支撑元件203是多个圆柱支柱，并且所述支柱位于板172上的基板处理直径之外。多个通孔201可形成于板172中以允许多个升降杆穿过。对应的通孔可形成于基座105中以允许多个升降杆穿过。
支撑元件203可由任何合适的材料制成，例如石英、熔融石英、碳化硅、氮化硅、碳化硅涂覆的石墨、玻璃碳涂覆的石墨、氮化硅涂覆的石墨、玻璃碳、石墨、碳化硅涂覆的石英或玻璃碳涂覆的石英。每个支撑元件203可具有范围为约4mm至约60mm的高度，例如约30mm至约60mm，并且可具有范围为约5mm至约15mm的直径220，例如约10mm。基座105(图1)可直接由支撑元件203支撑，或可由设置在支撑元件203中或支撑元件203上的杆(pin)或帽支撑。在一个实施方式中，板172由熔融石英制成，支撑元件203由熔融石英制成，杆由固态碳化硅制成。
轴杆170可包括第一部分202、第二部分204、间隔垫206和连接件208。第一部分202和第二部分204可由熔融石英制成，间隔垫206可由不透明石英制成。
图2B是图2A的基座支撑件200的示意性横截面图。如图2B所示，支撑元件203可熔合到板172。每个支撑元件203可包括开口210以在开口210中放置杆，并且基座105可由设置在开口210中的杆支撑。每个支撑元件203可包括壁213和具有渐缩形状的部分212。渐缩部分212可连接到壁213，并且可具有平坦的顶表面222。部分212可与形成于基座105的背侧上的对应的凹部接合，以用于固定基座105。可使用其他合适的方法将基座105固定到支撑元件203。
部分212的渐缩形状可以具有直线渐缩、分段渐缩或弯曲渐缩。例如，渐缩形状可以是圆锥形的，并且渐缩部分可与支撑元件203的壁213形成恒定的角度，所述角度在约1°和约30°之间，例如约15°，朝向支撑元件203的中心轴215。作为另一个范例，如图2C所示，渐缩形状可以是弯曲部分224，弯曲部分224大体上与壁213相切，弯曲部分224与壁213在相切处会合，并且弯曲部分朝支撑元件203的中心轴215弯曲。因此，弯曲部分224可以是支撑元件203的圆形端部，或者弯曲部分224可具有如上所述的弯曲渐缩与平坦顶表面222，如图2C所示。
渐缩部分可具有单一曲率半径，或多个曲率半径。在一个实施方式中，部分212具有直的渐缩形状，所述直的渐缩形状在弯曲结合部分226处与平坦顶表面222会合，如图2D所示。平坦顶表面222可具有小于支撑元件203的直径220的直径228，例如介于支撑元件203的直径220的约30％和约80％之间。结合部分226可具有小于平坦顶表面222的直径228的曲率半径，例如介于平坦顶表面222的直径的约5％和约20％之间。应注意到，如上方所描述的弯曲结合部分226也可用来将弯曲部分224(图2C)结合至平坦顶表面222。弯曲结合部分226也可用于结合具有弯曲的或直的渐缩部分212与弯曲顶部部分，意味着顶部部分不是平坦的。
也可使用其他渐缩形状。例如，在一些实施方式中，渐缩形状可包括螺纹以将端部部分，例如碳化硅末端附接至支撑元件203。在一个实施方式中，部分212可从形成在支撑元件203中的阶梯234上升，如图2E所示。阶梯234可具有横向尺寸230，横向尺寸230在支撑元件203的直径220的1％和25％之间，例如约5％。阶梯234可包括部分232，部分232大体上垂直于横向尺寸230，并且部分232可连接到顶表面222。横向尺寸230在图2E中被示出为大体上垂直于壁213，尽管在其他实施方式中，横向尺寸230可不与壁213垂直。在另一个实施方式中，从支撑元件203结合板172的位置到大体上靠近支撑元件203的端部的位置，整个支撑元件203在外形上可以是圆锥的或截头圆锥的，具有任何所需的端部特征以与基座105接合。最后，如上所述，渐缩可被分段。在一个范例中，部分212可具有第一部分和第二部分，第一部分具有截头圆锥形状，第一部分的截头圆锥形状具有与壁213形成第一角度的轮廓，第二部分具有截头圆锥形状，第二部分的截头圆锥形状具有与第一部分形成第二角度的轮廓，使得部分212是以直线轮廓渐缩的，但与壁213形成的角度不是恒定的。对于分段渐缩，可使用任何数量的区段。
图3A是根据本文描述的另一个实施方式的基座支撑件300的透视图。如图3A所示，基座支撑件300包括轴杆170、在第一主要表面171处耦合到轴杆170的板172和从板172的第二主要表面上173延伸的支撑元件302。支撑元件302可以是中空圆柱，并且可具有比基板108(图1)的直径大的内径304。在一个实施方式中，基板108具有约300mm的直径，支撑元件302具有大于300mm的内径304，例如约310mm至约360mm的内径304。板172可具有类似于或大于基座105的直径的直径306。在一个实施方式中，板172具有约370mm的直径306。基座105可由支撑元件302支撑。或者，基板108可由支撑元件302直接支撑。支撑元件302可被焊接或熔合到板172、与板172一体成形或放置在形成于板172中的槽中，以固定支撑元件302。支撑元件302可由任何合适的材料制成，例如石英、熔融石英、碳化硅、氮化硅、碳化硅涂覆的石墨、玻璃碳涂覆的石墨、氮化硅涂覆的石墨、玻璃碳、石墨、碳化硅涂覆的石英或玻璃碳涂覆的石英。支撑元件302可具有范围为约30mm至约60mm的高度，以具有约30mm至约60mm的距离D(图1)。
支撑元件302可具有范围为约2mm至约50mm的厚度308。所述厚度可以是恒定的，或者可随着高度、方位或两者而变化。在一个实施方式中，支撑元件302的径向横截面具有矩形形状，在另一个实施方式中，支撑元件302的径向横截面具有梯形形状。径向横截面可以是恒定的，或可随着方位变化。
图3B是根据本文描述的另一个实施方式的基座支撑件320的透视图。如图3B所示，基座支撑件320包括轴杆170、在第一主要表面171耦合到轴杆170的板172和从板172的第二主要表面173延伸的多个支撑元件322。多个支撑元件322的每一个可具有遵循板172的曲率的曲率。换言之，每个支撑元件322可具有外表面326，外表面326大体上平行于板172的厚度表面328。多个支撑元件322的外表面326的长度可为相同的或不同的。相邻的支撑元件322可由间隔324分开，并且这些间隔324可具有相同的尺寸或不同的尺寸。支撑元件322的数量范围可为2个至10个，例如3个至6个。
支撑元件322可由任何合适的材料制成，例如石英、熔融石英、碳化硅、氮化硅、碳化硅涂覆的石墨、玻璃碳涂覆的石墨、氮化硅涂覆的石墨、玻璃碳、石墨、碳化硅涂覆的石英或玻璃碳涂覆的石英。每个支撑元件322可具有范围为约30mm至约60mm的高度，以具有约30mm至约60mm的距离D(图1)。多个支撑元件322位于板172上的基板处理直径之外。
图4A是根据本文描述的另一个实施方式的基座支撑件400的透视图。如图4A所示，基座支撑件400包括轴杆170、在第一主要表面171处耦合到轴杆170的板172、从第二主要表面173延伸的多个支撑元件203和从第二主要表面173延伸的支撑元件302。基座105可由支撑元件203支撑，而支撑元件302用于屏蔽来自支撑元件203的辐射能量。结果，基板108所接收到的辐射能量是来自穿过被支撑元件302围绕的板172的部分的辐射能量。支撑元件302可具有大于基板108的直径的直径，并且支撑元件203设置在板172上的支撑元件302之外。每个支撑元件203与支撑元件302之间的距离可为约1mm至约10mm。当基座105直接由支撑元件203支撑时，支撑元件302的高度可小于每个支撑元件203的高度。当基座105由设置在支撑元件203中的杆支撑时，支撑元件302的高度可大于每个支撑元件203的高度。
图4B是根据本文描述的另一个实施方式的基座支撑件410的透视图。如图4B所示，基座支撑件410包括轴杆170、在第一主要表面171处耦合到轴杆170的板172、从第二主要表面173延伸的多个支撑元件203和从第二主要表面173延伸的多个支撑元件322。基座105可由支撑元件203支撑，而支撑元件322用于屏蔽来自支撑元件203的辐射能量。结果，基板108所接收的辐射能量是来自穿过被支撑元件322围绕的板172的部分的辐射能量。支撑元件322可邻近支撑元件203定位，以阻挡来自支撑元件203的辐射能量。在一个实施方式中，有三个支撑元件203和临近支撑元件203定位的三个支撑元件322。每个支撑元件203和对应的支撑元件322之间的距离的范围可为约1mm至约10mm。当基座105直接由支撑元件203支撑时，每个支撑元件322的高度可小于每个支撑元件203的高度。当基座105由设置在支撑元件203中的杆支撑时，每个支撑元件322的高度可大于每个支撑元件203的高度。
尽管前述内容针对本公开内容的实施方式，在不脱离本公开内容的基本范围的情况下，可设计本公开内容的其他和进一步的实施方式，并且本公开内容的范围由随附的权利要求书确定。

Claims (15)

1.一种设备，包括：
轴杆；
板，所述板具有耦合到所述轴杆的第一主要表面，其中所述板包含石英、熔融石英、氧化铝、蓝宝石或氧化钇，并且所述板具有范围为约2mm至约20mm的厚度；和
支撑元件，所述支撑元件从所述板的第二主要表面延伸。
2.如权利要求1所述的设备，其中所述板具有范围为约4mm至约8mm的厚度。
3.如权利要求1所述的设备，其中所述支撑元件包括中空圆柱。
4.如权利要求1所述的设备，其中所述支撑元件包括多个圆柱支柱。
5.如权利要求4所述的设备，其中所述多个圆柱支柱的圆柱支柱包括壁和连接到所述壁的渐缩部分。
6.如权利要求5所述的设备，其中所述渐缩部分包括直线渐缩。
7.如权利要求5所述的设备，其中所述渐缩部分包括弯曲渐缩。
8.如权利要求4所述的设备，进一步包括中空圆柱，所述中空圆柱从所述板的所述第二主要表面延伸，其中所述多个圆柱支柱位于所述中空圆柱之外。
9.一种设备，包括：
轴杆；
板，所述板具有耦合到所述轴杆的第一主要表面，其中所述板包含石英、熔融石英、氧化铝、蓝宝石或氧化钇；和
支撑元件，所述支撑元件从所述板的第二主要表面延伸，其中所述支撑元件具有范围为约10mm至约60mm的高度。
10.如权利要求9所述的设备，其中所述支撑元件包括多个圆柱支柱。
11.如权利要求10所述的设备，其中所述多个圆柱支柱的圆柱支柱包括壁和连接到所述壁的渐缩部分。
12.如权利要求11所述的设备，其中所述渐缩部分包括直线渐缩。
13.一种工艺腔室，包括：
第一外壳构件；
第二外壳构件；
基座支撑件，其中所述基座支撑件的至少一部分设置在所述第一外壳构件和所述第二外壳构件之间，其中所述基座支撑件包括：
轴杆；
板，所述板具有耦合到所述轴杆的第一主要表面，其中所述板包含石英、熔融石英、氧化铝、蓝宝石或氧化钇，并且所述板具有范围为约2mm至约20mm的厚度；和
支撑元件，所述支撑元件从所述板的第二主要表面延伸；和
多个能量源，所述多个能量源面向所述第二外壳构件而设置。
14.如权利要求13所述的设备，进一步包括基座，所述基座设置在所述基座支撑件上，其中所述基座和所述基座支撑件之间的距离的范围为约10mm至约60mm。
15.如权利要求13所述的设备，其中所述支撑元件包括多个圆柱支柱。
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