TWI725127B - 承載盤支座 - Google Patents
承載盤支座 Download PDFInfo
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- TWI725127B TWI725127B TW106106598A TW106106598A TWI725127B TW I725127 B TWI725127 B TW I725127B TW 106106598 A TW106106598 A TW 106106598A TW 106106598 A TW106106598 A TW 106106598A TW I725127 B TWI725127 B TW I725127B
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- plate
- supporting element
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- shaft
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 239000010453 quartz Substances 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 19
- 239000005350 fused silica glass Substances 0.000 claims description 16
- 229910021397 glassy carbon Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 17
- 230000005855 radiation Effects 0.000 abstract description 14
- 238000005137 deposition process Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 45
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
本文所揭示的實施例一般涉及用於在沉積處理中支撐承載盤的承載盤支座。該承載盤支座包括軸桿；板材，該板材具有耦合到軸桿的第一主要表面；及支撐元件，該支撐元件從板材的第二主要表面延伸。該板材可由對輻射能量透光的材料製成，該輻射能量是來自於設置在板材底下的複數個能量源。該板材可具有厚度，該厚度小到足以將輻射傳輸損耗最小化，且大到足以在處理期間熱穩定且機械穩定地支撐承載盤。該板材的厚度範圍可為約2 mm至約20 mm。
Description
本文揭示用於半導體處理的設備。更具體而言，本文中揭示的實施例涉及一種用於在沉積處理中支撐承載盤的承載盤支座。
在積體電路的製造中，諸如化學氣相沉積(CVD)或磊晶處理的沉積處理被用於在半導體基板上沉積各種材料的薄膜。磊晶是廣泛使用在半導體處理中以在半導體基板上形成非常薄的材料層的處理。該等層經常定義一些半導體裝置的最小特徵，且若需要晶體材料的電特性，則該等層可具有高品質的晶體結構。沉積前驅物通常被提供至處理腔室，其中基板被設置在該處理腔室中，該基板被加熱到有利於具有特定性質的材料層生長的溫度。
傳統上，基板被設置在承載盤上，且承載盤由三個或更複數個臂支撐，該等臂從軸桿延伸。複數個能量源，例如燈，可被設置在基板下方以加熱基板的背側。承載盤通常用於將來自能量源的輻射中的任何非均勻性分散出去。來自能量源的輻射被承載盤支撐臂所阻擋，導致承載盤無法充分地移除不均勻性，造成基板的非均勻加熱。
因此，需要用於支撐承載盤的改進設備。
本文所揭示的實施例涉及用於在沉積處理中支撐承載盤的承載盤支座。在一個實施例中，一種設備包括軸桿及板材，該板材具有耦合到軸桿的第一主要表面。板材包括石英、熔融石英、氧化鋁、藍寶石，或氧化釔，且該板材具有範圍是從約2 mm至約20 mm的厚度。該設備進一步包括支撐元件，該支撐元件從板材的第二主要表面延伸。
在另一個實施例中，一種設備包括軸桿及板材，該板材具有耦合到軸桿的第一主要表面。板材包括石英、熔融石英、氧化鋁、藍寶石，或氧化釔。該設備進一步包括支撐元件，該支撐元件從板材的第二主要表面延伸，且該支撐元件具有範圍是從約30 mm至約60 mm的高度。
在另一個實施例中，處理腔室包括第一外殼構件、第二外殼構件，及承載盤支座。承載盤支座的至少一部分被設置在第一外殼構件及第二外殼構件之間。承載盤支座包括軸桿及板材，該板材具有耦合到軸桿的第一主要表面。板材包括石英、熔融石英、氧化鋁、藍寶石，或氧化釔，且該板材具有範圍是從約2 mm至約20 mm的厚度。該設備進一步包括支撐元件，該支撐元件從板材的第二主要表面延伸。該處理腔室進一步包括複數個能量源，該等能量源經設置以面向該第二外殼構件。
本文描述的實施例一般涉及用於在沉積處理中支撐承載盤的承載盤支座。承載盤支座包括軸桿、板材及支撐元件，該板材具有耦合到軸桿的第一主要表面，且該支撐元件從該板材的第二主要表面延伸。該板材可由對輻射能量透光的材料製成，該輻射能量是來自於設置在板材底下的複數個能量源。該板材可具有厚度，該厚度小到足以將輻射傳輸損耗最小化，且大到足以在處理期間熱穩定且機械穩定地支撐承載盤。該板材的厚度範圍可為約2 mm至約20 mm。支撐元件可設置在板材上或與板材一體成形，且該支撐元件可被提供在基板處理直徑之外的板材上之一或更多個位置，該基板處理直徑是板材在處理期間被設置在承載盤上的基板所大致覆蓋的直徑。
圖1是根據一個實施例的處理腔室100的示意剖面圖。處理腔室100可用於處理一或更多個基板，包括在基板108的沉積表面116上沉積材料。處理腔室100包括複數個能量源102，該等能量源用於加熱設置在處理腔室100內的基板108的背側104以及其他部件。複數個能量源102可為複數個加熱燈。基板108可由承載盤105所支撐，該承載盤由承載盤支座150所支撐。承載盤105可由碳化矽或具有碳化矽塗層的石墨所製成。承載盤支座150包括軸桿170、耦合到軸桿170的板材172及從板材172延伸的支撐元件174。軸桿170中心耦合到板材的第一主要表面171，且支撐元件174從與第一主要表面171相對的板材之第二主要表面173延伸。板材172可為圓盤，且該板材是由對輻射能量透光的材料所製成，該輻射能量是來自設置在板材172下方的複數個能量源102。透光意味著材料傳輸了大部分的輻射能量，且非常少被反射及/或吸收。在一個實施例中，板材由石英製成，例如熔融石英。在其他實施例中，板材172由氧化鋁、藍寶石，或氧化釔製成。
板材172可具有厚度，該厚度小到足以將輻射傳輸損耗最小化，且大到足以在處理期間熱穩定且機械穩定地支撐承載盤。該板材的厚度範圍可為約2 mm至約20 mm，例如約4 mm至約8 mm。支撐元件174可在板材172的基板處理直徑之外的一或更多個位置而被提供於板材172上，該基板處理直徑是板材172在處理期間被設置在承載盤105上的基板108所大致覆蓋的直徑。換言之，支撐元件174不是直接位於基板108下方。在一個實施例中，基板108具有約300 mm的直徑，且支撐元件174在直徑大於300 mm處位於板材172上，例如約310 mm至約360 mm。板材172可具有類似於或大於承載盤105的直徑之直徑。在一個實施例中，板材172的具有約370 mm的直徑。相較於習知的承載盤支座，板材172提供均勻介質給輻射能量穿過。此外，支撐元件174不直接位於基板108下方，因此支撐元件174不對基板108的背側104阻擋來自複數個能量源102的輻射能量。承載盤105及板材172之間的距離D可提供更均勻的基板108加熱。距離D的範圍可為約10 mm至約60 mm，例如約30 mm至約60 mm，例如約40 mm。
承載盤支座150的至少一部分位於處理腔室100內的第一外殼構件128及第二外殼構件114之間。基板108可透過裝載口103被帶入處理腔室100並定位在承載盤105上。在位於處理位置時，承載盤105及板材172將處理腔室100的內部體積劃分為處理氣體區域156(基板108及第一外殼構件128之間)及淨化氣體區域158(板材172及第二外殼構件114之間)。承載盤支座150可在處理期間繞著其中心軸旋轉，以將處理腔室100內的熱及處理氣流的空間異常之影響最小化，並因此促進基板108的均勻處理。承載盤支座150在裝載及卸載期間(且在一些情況中，於基板108的處理期間)於軸向方向134中移動承載盤105。
一般而言，第一外殼構件128及第二外殼構件114由透光材料形成，例如石英。第一外殼構件128及第二外殼構件114是薄的，以將熱儲存最小化，該第一外殼構件及該第二外殼構件通常具有約3 mm及約10 mm之間的厚度，例如約4 mm。第一外殼構件128可藉由引入熱控制流體(例如冷卻氣體)透過入口端126進入熱控制空間136，並透過出口端130抽出熱控制流體以進行熱控制。在一些實施例中，循環透過熱控制空間136的冷卻流體可減少第一外殼構件128的內表面上之沉積。第二外殼構件114可具有圓漸縮狀，以承受處理腔室100內的真空狀態。在一個實施例中，第二外殼構件114由石英製成，石英是對來自複數個能量源102的輻射能量透光的。
反射器122可選擇性地放置在第一外殼構件128以外，以將從基板108放射的輻射反射回基板108上。由於反射的輻射，加熱的效率將藉由包含反之會逃脫處理腔室100的熱來改善。反射器122可由金屬製成，例如鋁、黃銅或不銹鋼。
複數個能量源102可經適配以將基板108加熱至範圍為約攝氏200度至約攝氏1400度內的溫度，例如約攝氏300度至約攝氏1350度。複數個能量源102可定位在隔間之外殼145內。每個能量源102可被設置在管143內。可為高溫計的複數個熱輻射感測器140可被設置在外殼145中以用於量測基板108的熱排放。感測器140通常設置在外殼145中的不同位置，以在處理期間促成觀看基板108的不同位置。從基板108的不同位置感測熱輻射可促成比較基板108不同位置的熱能含量，例如溫度，以判定溫度異常或不均勻是否存在。此類非均勻性可造成薄膜形成的非均勻性，例如厚度及組成。通常使用至少兩個感測器140，但可使用兩個以上的感測器。不同的實施例可使用三個、四個、五個、六個、七個，或更多個感測器140。
熱感測器118可被設置在反射器122中來監測第一外殼構件128的熱狀態，或從相對於感測器140的視點來監測基板108的熱狀態。此類監測可有助於比較從感測器140接收的資料，例如，判定從感測器140接收的資料中是否存在故障。熱感測器118在一些情況下可為感測器組件，呈現具有一個以上的獨立感測器。因此，處理腔室100可呈現經設置以接收從基板的第一側發射的輻射之一或更多個感測器，及經設置以接收來自相對於第一側的基板之第二側的輻射的一或更多個感測器。
控制器160從感測器140接收資料，並基於該資料分別地調整傳遞到每個能量源102或能量源102的獨立群組的功率。控制器160可包括電源162，該電源獨立地供電給各種能量源102。控制器160可以特定溫度分佈配置，且基於比較從感測器140接收的資料，控制器160調整對能量源102的供電，以使所觀察到的熱資料符合特定的溫度分佈。
圖2A是根據一個實施例的承載盤支座200的透視圖。承載盤支座200可用於圖1的處理腔室100中以代替承載盤支座150。如圖2A所顯示，承載盤支座200包括軸桿170、耦合到軸桿170的板材172，及複數個從板材172延伸的支撐元件203。在一個實施例中，支撐元件203是複數個圓柱支柱，且支柱位於板材172上的基板處理直徑之外。複數個通孔201可形成於板材172中以允許複數個升舉銷穿過。對應的通孔可形成於承載盤105中以允許複數個升舉銷穿過。
支撐元件203可由任何合適的材料製成，例如石英、熔融石英、碳化矽、氮化矽、碳化矽塗覆的石墨、玻璃碳塗覆的石墨、氮化矽塗覆的石墨、玻璃碳、石墨、碳化矽塗覆的石英，或玻璃碳塗覆的石英。每個支撐元件203可具有範圍為約4 mm至約60 mm的高度，例如約30 mm至約60 mm，且可具有範圍為約5 mm至約15 mm的直徑220，例如約10 mm。承載盤105(圖1)可直接由支撐元件203支撐，或可由設置在支撐元件203之中或之上的銷或帽來支撐。在一個實施例中，板材172由熔融石英製成，支撐元件203由熔融石英，且銷由固態碳化矽製成。
軸桿170可包括第一部分202、第二部分204、間隔墊206及連接器208。第一部分202及第二部分204可由熔融石英製成，且間隔墊206可由不透明石英製成。
圖2B是圖2A的承載盤支座200的示意剖面圖。如圖2B所顯示，支撐元件203可熔合到板材172。每個支撐元件203可包括開口210以在其中放置銷，且承載盤105可由設置在開口210中的銷來支撐。每個支撐元件203可包括壁213及具有漸縮形狀的部分212。漸縮部分212可被連接到壁213，且可具有平坦的頂表面222。部分212可與形成於承載盤105之背側上的對應凹部銜接，以用於固定承載盤105。其他合適的方法可用於將承載盤105固定到支撐元件203。
部分212的漸縮形狀可以具有線性漸縮、區段漸縮，或彎曲漸縮。例如，漸縮形狀可為圓錐形的，且漸縮部分可與支撐元件203的壁213形成恆定的角度，該角度為約1˚及約30˚之間，例如約15˚，朝向支撐元件203的中心軸215。作為另一個範例，如圖2C所顯示，漸縮形狀可為彎曲部分224，該彎曲部分幾乎與壁213正切，其中該正切處為彎曲部分224與壁213會合的地方，且該彎曲部分朝支撐元件203的中心軸215彎曲。因此，彎曲部分224可為支撐元件203的圓形端部，或彎曲部分224可具有彎曲漸縮，如上所述，及平坦頂表面222，如圖2C所顯示。
漸縮部分可具有單一個曲率半徑，或多個曲率半徑。在一個實施例中，部分212具有直的漸縮形狀，該直的漸縮形狀在彎曲接合部分226處與平坦頂表面222會合，如圖2D所顯示。平坦頂表面222可具有小於支撐元件203之直徑220的直徑228，例如介於支撐元件203的直徑220的約30％及約80％之間。接合部分226可具有小於平坦頂表面222的直徑228的曲率半徑，例如介於平坦頂表面222之直徑的約5％及約20％之間。應注意到，如上方所描述的彎曲接合部分226亦可用來將彎曲部分224(圖2C)接合至平坦頂表面222。彎曲接合部分226亦可用於接合具有彎曲或直線漸縮、具有彎曲頂部部分的部分212，意味著頂部部分不是平坦的。
亦可使用其他漸縮形狀。例如，在一些實施例中，漸縮形狀可包括螺紋以將端部部分，例如碳化矽末端附接至支撐元件203。在一個實施例中，部分212可從形成在支撐元件203中的階梯234上升，如圖2E所顯示。階梯234可具有橫向維度230，該橫向維度在支撐元件203的直徑220的1％及25％之間，例如約5％。階梯234可包括部分232，該部分232幾乎垂直於橫向維度230，且部分232可被連接到頂表面222。橫向維度230被顯示為幾乎垂直於圖2E中的壁213，儘管在其他實施例中，橫向維度230可不與壁213垂直。在另一個實施例中，整個支撐元件203可為錐形或截頭圓錐的形狀，其中從該錐形或截頭圓錐處，支撐元件203將板材172接合到幾乎靠近支撐元件203的端部，且具有任何所需的端部特徵以便與承載盤105銜接。最後，如上所述，漸縮可被分區段。在一個範例中，部分212可具有第一部分及第二部分，該第一部分具有截頭圓錐形狀，該截頭圓錐形狀具有與壁213形成第一角度的輪廓，且該第二部分具有截頭圓錐形狀，該截頭圓錐形狀具有與第一部分形成第二角度的輪廓，使得部分212是以線性輪廓漸縮的，但與壁213形成非固定的角度。對於區段漸縮，可使用任何數量的區段。
圖3A是根據本文描述的另一個實施例的承載盤支座300的透視圖。如圖3A所顯示，承載盤支座300包括軸桿170、在第一主要表面171處耦合到軸桿170的板材172，及從板材172的第二主要表面上173延伸的支撐元件302。支撐元件302可為中空圓柱體，且可具有內徑304，該內徑比基板108(圖1)的直徑大。在一個實施例中，基板108具有為約300 mm的直徑，且支撐元件302具有大於300 mm的內徑304，例如約310 mm至約360 mm。板材172可具有直徑306，該直徑306類似於或大於承載盤105的直徑。在一個實施例中，板材172具有約370 mm的直徑306。承載盤105可由支撐元件302支撐。替代地，基板108可由支撐元件302直接支撐。支撐元件302可被焊接或熔合到板材172、與板材172一體成形，或放置在形成於板材172中的凹槽中，以固定支撐元件302。支撐元件302可由任何合適的材料製成，例如石英、熔融石英、碳化矽、氮化矽、碳化矽塗覆的石墨、玻璃碳塗覆的石墨、氮化矽塗覆的石墨、玻璃碳、石墨、碳化矽塗覆的石英，或玻璃碳塗覆的石英。支撐元件302可具有範圍為約30 mm至約60 mm的高度，以便具有約30 mm至約60 mm的距離D(圖1)。
支撐元件302可具有範圍為約2 mm至約50 mm的厚度308。該厚度可為恆定的，或者可隨著高度、方位，或兩者而變化。在一個實施例中，支撐元件302的徑向橫截面具有矩形形狀，且在另一個實施例中，支撐元件302的徑向橫截面具有梯形形狀。徑向橫截面可為恆定的，或可隨著方位角變化。
圖3B是根據本文描述的另一個實施例的承載盤支座320的透視圖。如圖3B所顯示，承載盤支座320包括軸桿170、在第一主要表面171耦合到軸桿170的板材172，及複數個從板材172的第二主要表面173延伸的支撐元件322。複數個支撐元件322的每一者可具有曲率，該等曲率跟隨著板材172的曲率。換言之，每個支撐元件322可具有外表面326，該等外表面幾乎平行於板材172的厚度表面328。複數個支撐元件322的外表面326的長度可為相同的或不同的。相鄰的支撐元件322可由空間324分開，且空間324可具有相同的維度或不同的維度。支撐元件322的數量範圍可為2個至10個，例如3個至6個。
支撐元件322可由任何合適的材料製成，例如石英、熔融石英、碳化矽、氮化矽、碳化矽塗覆的石墨、玻璃碳塗覆的石墨、氮化矽塗覆的石墨、玻璃碳、石墨、碳化矽塗覆的石英，或玻璃碳塗覆的石英。每個支撐元件322可具有範圍為約30 mm至約60 mm的高度，以便有約30 mm至約60 mm的距離D(圖1)。複數個支撐元件322位於板材172上的基板處理直徑之外。
圖4A是根據本文描述的另一個實施例的承載盤支座400的透視圖。如圖4A所顯示，承載盤支座400包括軸桿170、在第一主要表面171耦合到軸桿170的板材172、複數個從第二主要表面173延伸的支撐元件203，及從第二主要表面173延伸的支撐元件302。承載盤105可由支撐元件203支撐，且支撐元件302用於遮蔽來自支撐元件203的輻射能量。作為結果，基板108所接收到的輻射能量是來自透過板材172之一部分的輻射能量，該板材被支撐元件302所包圍。支撐元件302可具有直徑，該直徑大於基板108的直徑，且支撐元件203被設置在板材172上的支撐元件302之外。每個支撐元件203與支撐元件302之間的距離可為約1 mm至約10 mm。當承載盤105直接由支撐元件203支承時，支撐元件302的高度可小於每個支撐元件203的高度。當承載盤105由設置在支撐元件203中的銷所支撐時，支撐元件302的高度可大於每個支撐元件203的高度。
圖4B是根據本文描述的另一個實施例的承載盤支座410的透視圖。如圖4B所顯示，承載盤支座410包括軸桿170、在第一主要表面171耦合到軸桿170的板材172、複數個從第二主要表面173延伸的支撐元件 203，及複數個從第二主要表面173延伸的支撐元件322。承載盤105可由支撐元件203支撐，且支撐元件322被用於遮蔽來自支撐元件203的輻射能量。作為結果，基板108所接收的輻射能量是來自於透過板材172之一部分的輻射能量，該板材由支撐元件322所包圍。支撐元件322可位於鄰近支撐元件203處，以阻擋來自支撐元件203的輻射能量。在一個實施例中，有三個支撐元件203及三個支撐元件322位於鄰近支撐元件203處。每個支撐元件203及相對應的支撐元件322之間的距離之範圍可為約1 mm至約10 mm。當承載盤105直接由支撐元件203支承時，每個支撐元件322的高度可小於每個支撐元件203的高度。當承載盤105由設置在支撐元件203中的銷所支撐時，每個支撐元件322的高度可大於每個支撐元件203的高度。
儘管前述內容是針對本揭示內容的實施例，但本揭示內容的其他及進一步的實施例可在不脫離其基本範疇的情況下設計，且其範疇是由隨後的請求項來判定。
100‧‧‧處理腔室
102‧‧‧能量源
103‧‧‧裝載口
104‧‧‧背側
105‧‧‧承載盤
108‧‧‧基板
114‧‧‧第二外殼構件
116‧‧‧沉積表面
118‧‧‧熱感測器
122‧‧‧反射器
126‧‧‧入口端
128‧‧‧第一外殼構件
130‧‧‧出口端
134‧‧‧軸向方向
136‧‧‧熱控制空間
140‧‧‧熱輻射感測器
143‧‧‧管
145‧‧‧外殼
150‧‧‧承載盤支座
156‧‧‧處理氣體區域
158‧‧‧淨化氣體區域
160‧‧‧控制器
162‧‧‧電源
170‧‧‧軸桿
171‧‧‧第一主要表面
172‧‧‧板材
173‧‧‧第二主要表面
174‧‧‧支撐元件
200‧‧‧承載盤支座
201‧‧‧通孔
202‧‧‧第一部分
203‧‧‧支撐元件
204‧‧‧第二部分
206‧‧‧間隔墊
208‧‧‧連接器
210‧‧‧開口
212‧‧‧部分
213‧‧‧壁
215‧‧‧中心軸
220‧‧‧直徑
222‧‧‧平坦頂表面
224‧‧‧彎曲部分
226‧‧‧彎曲接合部分
228‧‧‧直徑
230‧‧‧橫向維度
232‧‧‧部分
234‧‧‧階梯
300‧‧‧承載盤支座
302‧‧‧支撐元件
304‧‧‧內徑
306‧‧‧直徑
308‧‧‧厚度
320‧‧‧承載盤支座
322‧‧‧支撐元件
324‧‧‧空間
326‧‧‧外表面
328‧‧‧厚度表面
400‧‧‧承載盤支座
410‧‧‧承載盤支座
D‧‧‧距離
為了使本揭示內容的上述特徵可被詳細理解，以上簡要總結的本揭示內容的更具體描述可參考實施例，其中某些實施例繪示在附圖中。然而應注意到，附圖僅繪示本揭示內容的典型實施例，且因此不應被認定為限制其範疇，因為本揭示內容可允許其他等效的實施例。
圖1是根據本文描述的一個實施例的處理腔室的示意剖面圖。
圖2A是根據本文描述的一個實施例的承載盤支座的透視圖。
圖2B是圖2A的承載盤支座的示意剖面圖。
圖2C是根據本文描述的一個實施例的支撐元件的示意剖面圖。
圖2D是根據本文描述的一個實施例的支撐元件的示意剖面圖。
圖2E是根據本文描述的一個實施例的支撐元件的示意剖面圖。
圖3A是根據本文描述的另一個實施例的承載盤支座的透視圖。
圖3B是根據本文描述的另一個實施例的承載盤支座的透視圖。
圖4A是根據本文描述的另一個實施例的承載盤支撐的透視圖。
圖4B是根據本文描述的另一個實施例的承載盤支撐的透視圖。
為了促進理解，相同的參考符號在所有可能的地方被用來指定圖式共有的相同元件。此外，一個實施例的元件可有利地適用於本文描述的其他實施例中。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
170‧‧‧軸桿
171‧‧‧第一主要表面
172‧‧‧板材
173‧‧‧第二主要表面
200‧‧‧承載盤支座
201‧‧‧通孔
202‧‧‧第一部分
203‧‧‧支撐元件
204‧‧‧第二部分
206‧‧‧間隔墊
208‧‧‧連接器
220‧‧‧直徑
Claims (25)
- 一種承載盤支座設備，包括：一軸桿；一板材，該板材具有耦合到該軸桿的一第一主要表面，其中該板材包括石英、熔融石英、氧化鋁、藍寶石，或氧化釔，且該板材具有一厚度，該厚度範圍為約2mm至約20mm；及一支撐元件，該支撐元件從該板材的一第二主要表面延伸，其中該支撐元件包括複數個圓柱支柱，且該複數個圓柱支柱的每一個圓柱支柱包括一壁以及連接到該壁的一漸縮部分。
- 如請求項1所述之設備，其中該板材具有一厚度，該厚度範圍為約4mm至約8mm。
- 如請求項1所述之設備，其中該漸縮部分包括一線性漸縮。
- 如請求項1所述之設備，其中該漸縮部分包括一彎曲漸縮。
- 如請求項1所述之設備，進一步包括一中空圓柱，該中空圓柱從該板材的該第二主要表面延伸，其中該複數個圓柱支柱位於該中空圓柱之外。
- 如請求項1所述之設備，其中該支撐元件包括石英、熔融石英、碳化矽、氮化矽、碳化矽塗覆的 石墨、玻璃碳塗覆的石墨、氮化矽塗覆的石墨、玻璃碳、石墨、碳化矽塗覆的石英，或玻璃碳塗覆的石英。
- 一種承載盤支座設備，包括：一軸桿；一板材，該板材具有耦合到該軸桿的一第一主要表面，其中該板材包括石英、熔融石英、氧化鋁、藍寶石，或氧化釔；及一支撐元件，該支撐元件從該板材的一第二主要表面延伸，其中該支撐元件具有一高度，該高度範圍為約10mm至約60mm。
- 如請求項7所述之設備，其中該板材具有一厚度，該厚度範圍為約2mm至約20mm。
- 如請求項8所述之設備，其中該板材具有一厚度，該厚度範圍為約4mm至約8mm。
- 如請求項7所述之設備，其中該支撐元件包括一中空圓柱。
- 如請求項7所述之設備，其中該支撐元件包括複數個圓柱支柱。
- 如請求項11所述之設備，其中該複數個圓柱支柱的一圓柱支柱包括一壁，及連接到該壁的一漸縮部分。
- 如請求項12所述之設備，其中該漸縮部分 包括一線性漸縮。
- 如請求項12所述之設備，其中該漸縮部分包括一彎曲漸縮。
- 如請求項11所述之設備，進一步包括一中空圓柱，該中空圓柱從該板材的該第二主要表面延伸，其中該複數個圓柱支柱位於該中空圓柱之外。
- 一種處理腔室，包括：一第一外殼構件；一第二外殼構件；一承載盤支座，其中該承載盤支座的至少一部分設置在該第一外殼構件及該第二外殼構件之間，其中該承載盤支座包括：一軸桿；一板材，該板材具有耦合到該軸桿的一第一主要表面，其中該板材包括石英、熔融石英、氧化鋁、藍寶石，或氧化釔，且該板材具有一厚度，該厚度範圍為約2mm至約20mm；及一支撐元件，該支撐元件從該板材的一第二主要表面延伸；及複數個能量源，該複數個能量源經設置以面向該第二外殼構件。
- 如請求項16所述之處理腔室，進一步包括 一承載盤，該承載盤設置在該承載盤支座上，其中該承載盤及該承載盤支座之間的一距離的範圍為約10mm至約60mm。
- 如請求項16所述之處理腔室，其中該支撐元件包括複數個圓柱支柱。
- 如請求項16所述之處理腔室，其中該支撐元件包括複數個圓柱支柱，且該複數個圓柱支柱的每一個圓柱支柱包括一壁以及連接到該壁的一漸縮部分。
- 一種承載盤支座設備，包括：一軸桿；一板材，該板材具有耦合到該軸桿的一第一主要表面，其中該板材包括石英、熔融石英、氧化鋁、藍寶石，或氧化釔，且該板材具有一厚度，該厚度範圍為約2mm至約20mm；及一支撐元件，該支撐元件從該板材的一第二主要表面延伸，其中該支撐元件包括一中空圓柱，該中空圓柱具有一內徑及一厚度，且該內徑與該厚度的一加總係小於該板材的一直徑。
- 如請求項20所述之設備，其中該支撐元件包括石英、熔融石英、碳化矽、氮化矽、碳化矽塗覆的石墨、玻璃碳塗覆的石墨、氮化矽塗覆的石墨、玻 璃碳、石墨、碳化矽塗覆的石英，或玻璃碳塗覆的石英。
- 如請求項20所述之設備，進一步包括複數個圓柱支柱，該複數個圓柱支柱從該板材的該第二主要表面延伸。
- 如請求項22所述之設備，其中該複數個圓柱支柱設置在該中空圓柱的徑向向外處。
- 如請求項22所述之設備，其中該複數個圓柱支柱的每一個圓柱支柱包括一壁以及連接到該壁的一漸縮部分。
- 如請求項24所述之設備，其中該漸縮部分包括一線性漸縮。
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| WO2023112607A1 (ja) * | 2021-12-13 | 2023-06-22 | 東海カーボン株式会社 | ウエハリフトピン及びＳｉＣ膜被覆ガラス状炭素材 |
| CN114156227B (zh) * | 2022-02-10 | 2022-07-08 | 上海隐冠半导体技术有限公司 | 夹持装置 |
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| KR101704159B1 (ko) * | 2012-01-26 | 2017-02-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 상부 기판 지지 어셈블리를 갖는 열 처리 챔버 |
| US9532401B2 (en) * | 2013-03-15 | 2016-12-27 | Applied Materials, Inc. | Susceptor support shaft with uniformity tuning lenses for EPI process |
| KR102202406B1 (ko) * | 2013-05-23 | 2021-01-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 처리 챔버를 위한 코팅된 라이너 어셈블리 |
-
2017
- 2017-02-23 CN CN202310042592.2A patent/CN116200821A/zh active Pending
- 2017-02-23 DE DE112017001577.4T patent/DE112017001577T5/de active Pending
- 2017-02-23 KR KR1020187030870A patent/KR20180122023A/ko not_active Application Discontinuation
- 2017-02-23 CN CN201780018465.1A patent/CN108886014B/zh active Active
- 2017-02-23 JP JP2018550464A patent/JP7175766B2/ja active Active
- 2017-02-23 WO PCT/US2017/019102 patent/WO2017172131A1/en active Application Filing
- 2017-02-23 CN CN202310911111.7A patent/CN117107221A/zh active Pending
- 2017-03-01 TW TW106106598A patent/TWI725127B/zh active
- 2017-03-27 US US15/470,268 patent/US10837121B2/en active Active
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2022
- 2022-11-09 JP JP2022179255A patent/JP2023025016A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6893507B2 (en) * | 1997-11-03 | 2005-05-17 | Asm America, Inc. | Self-centering wafer support system |
| US20040211365A1 (en) * | 2001-08-14 | 2004-10-28 | Eiichi Yamaguchi | Chemical vapor phase epitaxial device |
| US20140290573A1 (en) * | 2013-03-27 | 2014-10-02 | Epicrew Corporation | Susceptor Support Portion and Epitaxial Growth Apparatus Including Susceptor Support Portion |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112017001577T5 (de) | 2018-12-06 |
| CN108886014B (zh) | 2023-08-08 |
| TW201801153A (zh) | 2018-01-01 |
| US20170275777A1 (en) | 2017-09-28 |
| CN108886014A (zh) | 2018-11-23 |
| KR20180122023A (ko) | 2018-11-09 |
| CN116200821A (zh) | 2023-06-02 |
| US10837121B2 (en) | 2020-11-17 |
| CN117107221A (zh) | 2023-11-24 |
| WO2017172131A1 (en) | 2017-10-05 |
| JP2023025016A (ja) | 2023-02-21 |
| JP7175766B2 (ja) | 2022-11-21 |
| JP2019511841A (ja) | 2019-04-25 |
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