CN108880206A - A kind of bootstrap power supply formula SiC MOSFET driving circuit inhibiting bridge arm crosstalk - Google Patents
A kind of bootstrap power supply formula SiC MOSFET driving circuit inhibiting bridge arm crosstalk Download PDFInfo
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- CN108880206A CN108880206A CN201810797124.5A CN201810797124A CN108880206A CN 108880206 A CN108880206 A CN 108880206A CN 201810797124 A CN201810797124 A CN 201810797124A CN 108880206 A CN108880206 A CN 108880206A
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- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 claims description 6
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 claims description 3
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 claims description 3
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 111
- 229910010271 silicon carbide Inorganic materials 0.000 description 110
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- 238000010586 diagram Methods 0.000 description 4
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- 239000003381 stabilizer Substances 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
A kind of bootstrap power supply formula SiC MOSFET driving circuit inhibiting bridge arm crosstalk disclosed by the invention, including power supply module PM1, power supply module PM1 is connected with bootstrapping power supply circuit in turn, upper bridge arm high-speed isolated driving chip U1, upper bridge arm SiC MOSFET driving circuit and upper bridge arm SiC switch mosfet pipe S1, power supply module PM1 is also connected with lower bridge arm high-speed isolated driving chip U2 in turn, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC switch mosfet pipe S2, S1 connects load with the midpoint bridge arm of S2, S1 drain electrode connection half-bridge bus DC_BUS+, S2 source electrode connects half-bridge bus DC_BUS-；It further include thering is logic gate level translation circuit U T1, UT1 to connect respectively with U1 and U2.
Description
Technical field
The invention belongs to power electronics driving circuit technical fields, are related to a kind of bootstrap power supply formula for inhibiting bridge arm crosstalk
SiC MOSFET driving circuit.
Background technique
The wide bandgap semiconductor power electronic devices with silicon carbide (SiC) for representative achieves booming in recent years, with
Silicon (Si) device is compared, and is saturated mobility with higher carrier, therefore have higher critical field strength, higher thermal conductivity
And the advantages that lower on-state loss.SiC MOSFET, can be significant since conducting resistance is small, switching speed is fast, high pressure resistant
Improve switching loss and on-state loss, be conducive to improve transducer effciency, thus is widely used in each type high temp, high pressure and height
Switching frequency occasion.But there are still more problems at present for the design of SiC MOSFET driving circuit.Due to SiC device characterisitic parameter
Difference, result in this way the threshold voltage of the grid of SiC MOSFET and grid voltage can power limit value compare Si MOSFET and
IGBT is lower, if being applied under high-speed switch state, the high du/dt of hourglass source electrode can be in the feedback capacity of its grid leak interpolar
Feedback current is generated in (Miller capacitance), the circuit formed in this way with gate electrode resistance can generate pressure drop, if this value is higher than its grid
Threshold voltage can be easy to cause misleading for SiC MOSFET.For problems, the scheme being usually taken is to driving circuit
Power supply provides certain negative voltage, guarantees with can guarantee grid in down tube SiC switch mosfet stateful switchover process on bridge arm
Interference rejection ability.But since the negative pressure ability to bear of SiC MOSFET is weaker, switch shape is connected in high speed complementation with bridge arm switching tube
The grid source electrode of di/dt meeting and circuit parasitic capacitance in SiC MOSFET under state generates biggish due to voltage spikes, is easy in this way
Puncture its grid oxic horizon, leads to device failure.
In addition to this, for half-bridge SiC MOSFET driving circuit, usually used mode is that upper and lower bridge arm driving is double
Power supply power supply, reliability and the power device grid source electrode to guarantee driving output voltage are reliably open-minded.But multiple power supplies are single-phase
And it will increase the complexity of power supply design in three-phase system.
Summary of the invention
The purpose of the present invention is to provide a kind of bootstrap power supply formula SiC MOSFET driving circuits for inhibiting bridge arm crosstalk.
The technical scheme adopted by the invention is that a kind of bootstrap power supply formula SiC MOSFET for inhibiting bridge arm crosstalk drives electricity
Road, including power supply module PM1, power supply module PM1 is connected with bootstrapping power supply circuit in turn, upper bridge arm high-speed isolated is driven
Dynamic chip U1, upper bridge arm SiC MOSFET driving circuit and upper bridge arm SiC switch mosfet pipe S1, power supply module PM1 is also
It is connected with lower bridge arm high-speed isolated driving chip U2, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC MOSFET in turn
Switching tube S2, upper bridge arm SiC switch mosfet pipe S1 connect negative with the midpoint bridge arm of lower bridge arm SiC switch mosfet pipe S2
It carries, upper bridge arm SiC switch mosfet pipe S1 drain electrode connection half-bridge bus DC_BUS+, the source lower bridge arm SiC switch mosfet pipe S2
Pole connects half-bridge bus DC_BUS-；It further include having logic gate level translation circuit U T1, logic gate level translation circuit U T1 difference
It is connect with upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2；
Power supply module PM1 uses B2424S chip, and the reference ground of power supply module PM1 is GND-2；
Upper bridge arm SiC MOSFET driving circuit is identical with lower bridge arm SiC MOSFET driving circuit structure.
The features of the present invention also characterized in that
Logic gate level translation circuit U T1 uses 74LVX4245 chip, and the reference ground of logic power is GND.
Upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2 are all made of 1EDI20N12AF high
Fast Magnetic isolation chip, in upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2：Pin VCC1 connects
Logic power is connect, pin GND1 is connect with GND, and pin GND2 is connected with GND-2, pin IN- connection GND；
The outlet side Uo+ of the pin VCC2 connection power supply module PM1 of lower bridge arm high-speed isolated driving chip U2, upper bridge
The pin VCC2 of arm high-speed isolated driving chip U1 is connect with bootstrapping power supply circuit；Upper bridge arm high-speed isolated driving chip U1's draws
The output terminals A 0 of foot IN+ connection logic gate level translation circuit U T1；The pin IN+ of lower bridge arm high-speed isolated driving chip U2 connects
Connect 1 end of output terminals A of logic gate level translation circuit U T1.
Power supply circuit of booting includes the diode DS1, resistance R2 and bootstrap capacitor Cb1 being sequentially connected in series, diode DS1 anode
Connect with the outlet side Uo+ of power supply module PM1, the both ends bootstrap capacitor Cb1 respectively with upper bridge arm high-speed isolated driving chip
The pin GND2 of U1 is connected with the pin VCC2 of upper bridge arm high-speed isolated driving chip U1.
Upper bridge arm SiC MOSFET driving circuit includes negative voltage generating circuit and driving output circuit.
Negative voltage generating circuit includes zener diode ZD2, electrolytic capacitor CT1 and resistance R3, zener diode ZD2 cathode with
The source electrode of upper bridge arm SiC switch mosfet pipe S1 connects, and zener diode ZD2 anode is connect with GND-2, and electrolytic capacitor CT1 is simultaneously
It is associated on zener diode ZD2, the one end resistance R3 is connected on the node between resistance R2 and bootstrap capacitor Cb1, and resistance R3 is another
One end is connect with electrolytic capacitor CT1, forms charge circuit.
Driving output circuit includes triode Q1, gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode
ZD1, triode Q1 base stage are connect by resistance R5 with the OUT- of upper bridge arm high-speed isolated driving chip U1, triode Q1 emitting stage
It is connected with lower bridge arm SiC switch mosfet pipe S2 grid, triode Q1 collector accesses upper bridge arm SiC switch mosfet pipe S1
Source electrode；Gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode ZD1 are connected in parallel on bridge arm SiC MOSFET respectively
Between the grid and source electrode of switching tube S1.
Upper bridge arm SiC switch mosfet pipe S1 grid is also connected with open resistance Rg1 and shutdown resistance Rg2, open resistance
The Rg1 other end connect the pin OUT+ of upper bridge arm high-speed isolated driving chip U1, shutdown one end resistance Rg2 and upper bridge arm high speed every
Pin OUT- connection from driving chip U1, the shutdown resistance Rg2 other end are connected to bridge arm SiC switch mosfet pipe S1 grid
Between pole and open resistance Rg1.
The beneficial effects of the present invention are：
(1) the bootstrap power supply formula SiC MOSFET driving circuit of inhibition bridge arm crosstalk of the invention, is opened in SiC MOSFET
Triode is added in the grid source electrode for closing pipe, when triode B, E pole tension is less than its threshold voltage by grid active clamp to SiC
Switch mosfet pipe source electrode can increase the turn-off speed of SiC MOSFET, and effectively half-bridge cells can be inhibited to be caused due to crosstalk
Upper bridge arm negative pressure spike and lower bridge arm positive pressure spike；
(2) the bootstrap power supply formula SiC MOSFET driving circuit of inhibition bridge arm crosstalk of the invention, using bootstrapping power supply
Mode is the power supply of half-bridge SiC MOSFET driving chip, reduces the quantity of driving power supply, reduces system cost；
(3) the bootstrap power supply formula SiC MOSFET driving circuit of inhibition bridge arm crosstalk of the invention, is produced using passive device
Raw negative pressure, can enhance the anti-interference ability of grid source electrode, inhibit switching tube caused by Miller effect to mislead, while can be reduced negative pressure
Generate the use of power supply, save the cost.
Detailed description of the invention
Fig. 1 is a kind of structural representation for the bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention
Figure；
Fig. 2 is power supply mould in a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention
The structural schematic diagram of block PM1；
Fig. 3 is logic gate level in a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention
The structural schematic diagram of conversion circuit UT1；
Fig. 4 is half-bridge driven electricity in a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention
The structural schematic diagram on road；
Fig. 5 is a kind of a kind of embodiment of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention
Structural schematic diagram；
Fig. 6 is upper bridge arm SiC in a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention
Circuit working state figure when switch mosfet pipe S1 is opened；
Fig. 7 is lower bridge arm SiC in a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention
Circuit working state figure when switch mosfet pipe S2 is opened.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk of the present invention, as shown in Figure 1, including supplying
Power supply module PM1, power supply module PM1 be connected in turn bootstrapping power supply circuit, upper bridge arm high-speed isolated driving chip U1,
Upper bridge arm SiC MOSFET driving circuit and upper bridge arm SiC switch mosfet pipe S1, power supply module PM1 are also sequentially connected
There are lower bridge arm high-speed isolated driving chip U2, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC switch mosfet pipe
S2, upper bridge arm SiC switch mosfet pipe S1 connect load, upper bridge with the midpoint bridge arm of lower bridge arm SiC switch mosfet pipe S2
Arm SiC switch mosfet pipe S1 drain electrode connection half-bridge bus DC_BUS+, the connection of lower bridge arm SiC switch mosfet pipe S2 source electrode
Half-bridge bus DC_BUS-；Further include having logic gate level translation circuit U T1, logic gate level translation circuit U T1 respectively with upper bridge
Arm high-speed isolated driving chip U1 is connected with lower bridge arm high-speed isolated driving chip U2.
As shown in Fig. 2, power supply module PM1 uses B2424S chip, the reference ground of power supply module PM1 is GND-
2, power supply circuit PM1 provide+24V for upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2
Driving voltage, with the SiC MOSFET gate turn-on voltage of satisfaction.
As shown in figure 3, logic gate level translation circuit U T1 uses 74LVX4245 chip, the reference ground of logic power is
GND, logic level conversion circuit UT1 are used to receive the driving signal from control chip, and main purpose is controller is defeated
Amplitude out is that the pulse of+3.3V is converted into and upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip
+ 5V the logic power that U2 matches, input side possess enable signal PWM/EN control 0E pin protection through high level pull down resistor
It is identical as input side pulse signal to export 8 tunnels by 5V power supply power supply after level conversion by rear class main power circuit, outlet side VCCA
Pwm signal distinguish the end IN+ of supreme bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2.
As shown in figure 4, upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2 are all made of
1EDI20N12AF high speed magnetic isolation drive chip, for receiving the PWM driving issued from logic gate level translation circuit U T1
Signal, and with bridge arm SiC switch mosfet pipe S1 and lower bridge arm SiC in power supply signal VCC2 driving after signal isolation is amplified
Switch mosfet pipe S2 switching tube, chip interior use the structure of push-pull output, to guarantee enough driving currents, accelerate SiC
MOSFET is open-minded；In upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2：Pin VCC1 connection
Logic power, pin GND1 are connect with GND, and pin GND2 is connected with GND-2, pin IN- connection GND, to guarantee single ended input
Driving pulse；Decoupling capacitor C2 is connected between GND-2 and+24V driving voltage, the effect of decoupling capacitor C2 is removal pin
The noise of VCC2；
The pin VCC2 of upper bridge arm high-speed isolated driving chip U1 is connect with bootstrapping power supply circuit, and lower bridge arm high-speed isolated is driven
The outlet side Uo+ of the pin VCC2 connection power supply module PM1 of dynamic chip U2；Upper bridge arm high-speed isolated driving chip U1's draws
The output terminals A 0 of foot IN+ connection logic gate level translation circuit U T1, pin IN+ receive the level signal PWM1A from UT1；Under
1 end of output terminals A of the IN+ connection logic gate level translation circuit U T1 of bridge arm high-speed isolated driving chip U2, pin IN+ are received
Level signal PWM1B from UT1.
Power supply circuit of booting includes the diode DS1, resistance R2 and bootstrap capacitor Cb1 being sequentially connected in series, to guarantee in Xia Qiao
Cut-in voltage, diode DS1 sun are provided when arm SiC switch mosfet pipe S2 is turned off for upper bridge arm SiC switch mosfet pipe S1
Pole is connect with the outlet side Uo+ of power supply module PM1, and the both ends bootstrap capacitor Cb1 drive core with upper bridge arm high-speed isolated respectively
The pin VCC2 of piece U1 is connected with the pin GND2 of upper bridge arm high-speed isolated driving chip U1.
In lower bridge arm SiC switch mosfet pipe S2 conducting, bridge arm midpoint potential can be by upper bridge arm SiC switch mosfet
High potential DC_BUS+ when pipe S1 is connected is pulled down to the drain potential DC_BUS- of lower bridge arm SiC switch mosfet pipe S2, in height
In fast switching process, the current potential at bridge arm midpoint can float between DC_BUS+ and DC_BUS-, and in lower bridge arm SiC MOSFET
When switching tube S2 is connected, the out-put supply side of upper bridge arm high-speed isolated driving chip U1 can from pin VCC2 through current-limiting resistance R2 to
Bootstrap capacitor Cb1 charging, the potential difference at bootstrap capacitor Cb1 capacitor both ends can make the grid source of lower bridge arm SiC switch mosfet pipe S2
Pole generates potential difference, so that upper bridge arm SiC switch mosfet pipe S1 effectively be connected.Diode DS1 is for obstructing due in bridge arm
The ELECTROMOTIVE FORCE FEEDBACK AND LOAD FEED that point floating current potential generates is to power circuit.
Upper bridge arm SiC MOSFET driving circuit includes negative voltage generating circuit and driving output circuit.
Negative voltage generating circuit includes zener diode ZD2, electrolytic capacitor CT1 and resistance R3, zener diode ZD2 cathode with
The source electrode of upper bridge arm SiC switch mosfet pipe S1 connects, and zener diode ZD2 anode is connect with GND-2, generates negative pressure, uses
Dual power supply mode, to enhance the vulnerability to jamming after upper bridge arm SiC switch mosfet pipe S1 shutdown, electrolytic capacitor CT1 is connected in parallel on
On zener diode ZD2, for keeping the stabilization of zener diode ZD2 both end voltage, the one end resistance R3 be connected to resistance R2 and
On node between bootstrap capacitor Cb1, the resistance R3 other end is connect with electrolytic capacitor CT1, is charged back with electrolytic capacitor CT1 formation
Road.
According to the upper bridge arm SiC of potential difference offer between zener diode ZD2/ZD4 anode and cathode due to zener effect generation
The negative voltage of switch mosfet pipe S1 and lower bridge arm SiC switch mosfet pipe S2 when off, to guarantee the anti-interference of grid source electrode
Property, preventing SiC MOSFET grid voltage as caused by Miller effect is more than the threshold voltage of SiC MOSFET, so as to cause
Upper and lower bridge arm switching tube misleads.
For the above bridge arm, driving output circuit include triode Q1, gate pole bleed-off circuit resistance R4, low value capacitance C3 and
Zener diode ZD1, triode Q1 base stage are connect by resistance R5 with the OUT- of upper bridge arm high-speed isolated driving chip U1, resistance
R5 is the base resistance of triode Q1 common collector working method, triode Q1 emitting stage and lower bridge arm SiC switch mosfet pipe
S2 grid is connected, as shown in figure 5, when work, in triode Q1 collector through bridge arm SiC MOSFET in low resistance R10 access
The source electrode of switching tube S1, low resistance R10 are the collector load resistor of triode Q1；Gate pole bleed-off circuit resistance R4, low value
Capacitor C3 and zener diode ZD1 is connected in parallel on respectively between the grid and source electrode of bridge arm SiC switch mosfet pipe S1.Pressure stabilizing
Diode ZD1 is for promoting gate-source voltage stability.
Low value capacitance C3/C6 shakes for suppressor grid, and high value resistor R4/R9 releases for accelerating gate charge, pressure stabilizing
Diode ZD1/ZD3 is used to enhance the interference rejection ability of grid.For upper bridge arm driving circuit, resistance R4 and upper bridge arm SiC
The grid sources connected in parallel of switch mosfet pipe S1, gate charge when turning off for upper bridge arm SiC switch mosfet pipe S1 provide electric discharge
Its velocity of discharge is accelerated in circuit；And zener diode ZD1 mainly absorbs the raising of grid grid potential due to caused by crosstalk etc.,
When the +/- potential of grid is more than set voltage-stabiliser tube Zener voltage, voltage-stabiliser tube can be punctured, gate-source voltage is made to be maintained at pressure stabilizing
In the voltage stabilized range of pipe, the danger that protection grid is punctured by positive/negative-pressure promotes grid robustness.
When system works, when the drain-source voltage that down tube SiC MOSFET S2 shutdown generates changes duCE/ dt and circuit
Parasitic inductance collective effect can generate the source electrode that negative voltage feeds back to upper tube SiC MOSFET S1, and when upper tube is opened, grid are penetrated
Pole can generate negative voltage spike, due to the presence of PNP triode Q1, grid potential can be made to be pulled down to the source electrode of switching tube, i.e.,
By the current potential of the grid active clamp of upper bridge arm SiC switch mosfet pipe S1 to S1 source electrode, bridge-arm tube SiC in guarantee
When MOSFETS1 is opened, lower bridge arm SiC switch mosfet pipe S2 can not receive interference.
Upper bridge arm SiC switch mosfet pipe S1 grid is also connected with open resistance Rg1 and shutdown resistance Rg2, open resistance
The Rg1 other end connect the pin OUT+ of upper bridge arm high-speed isolated driving chip U1, shutdown one end resistance Rg2 and upper bridge arm high speed every
Pin OUT- connection from driving chip U1, the shutdown resistance Rg2 other end are connected to bridge arm SiC switch mosfet pipe S1 grid
Between pole and open resistance Rg1.
Upper bridge arm SiC MOSFET driving circuit is identical with lower bridge arm SiC MOSFET driving circuit structure.
The half-bridge circuit working principle of the bootstrap power supply formula SiC MOSFET driving circuit of inhibition bridge arm crosstalk of the invention
It is as follows：
Fig. 6 is circuit working state figure when upper bridge arm SiC switch mosfet pipe S1 is opened.PWM1A input high level,
Then the outlet side OUT+ of upper bridge arm high-speed isolated driving chip U1 is exported using VCC2 as the driving pulse of amplitude, by grid electricity
The grid of bridge arm SiC switch mosfet pipe S1 in Rg1 inflow is hindered, after upper bridge arm SiC switch mosfet pipe S1 conducting, source electrode
Electric current Is is flowed through, since the service time of SiC MOSFET is short, then can accordingly generate biggish dis/ dt, with lower bridge arm SiC
The Ls2 voltage drop that parasitic inductance around switch mosfet pipe S2 generates can change lower bridge arm SiC switch mosfet pipe S2 grid
Potential, and due to the electric discharge of the Miller capacitance of S1 easily cause its mislead and, and Q2 can be effectively by lower bridge arm SiC
Source electrode of the grid clamping of switch mosfet pipe S2 to lower bridge arm SiC switch mosfet pipe S2, i.e. DC_BUS-, and due to
The presence of ZD2 and CT1, grid source electrode can be maintained at negative pressure state, so that it be inhibited to mislead.
Fig. 7 is circuit working state figure when lower bridge arm SiC switch mosfet pipe S2 is opened.With upper bridge arm SiC
The difference that switch mosfet pipe S1 is opened is that the crosstalk generated by lower bridge arm SiC switch mosfet pipe S2 occurs in upper bridge arm
The source electrode of SiC switch mosfet pipe S1, the di generated by high-speed switch state and drain current Idd/ dt can be with upper bridge arm
Parasitic inductance around SiC switch mosfet pipe S1 source electrode generates a potential difference, and negative pressure circuit ZD2 and CT1 are produced in addition
Raw negative pressure, it is easy to cause the negative pressure of grid source electrode to puncture, but due to the presence of concatenated voltage-stabiliser tube ZD1 and Q1, can have
Effect ground inhibits the breakdown of its grid source electrode negative pressure due to caused by crosstalk.
In addition, when lower bridge arm SiC switch mosfet pipe S2 is opened, since bridge arm midpoint potential is clamped at the leakage of S2
Pole, i.e. DC_BUS-, then bootstrap power supply circuit VCC2 is charged by bootstrap diode DS1, R2 to bootstrap capacitor Cb1, charging two
End voltage can be superimposed upon on the grid source electrode of bridge arm SiC switch mosfet pipe S1, and generating pressure drop can when S2 shutdown S1 is opened
Reliable conducting S1.
In the above manner, the bootstrap power supply formula SiC MOSFET driving circuit of inhibition bridge arm crosstalk of the invention, in SiC
PNP triode is added in the grid source electrode of switch mosfet pipe, when triode B, E pole tension is less than its threshold voltage that grid is active
Grid potential active clamp to source electrode can effectively be inhibited half-bridge cells due to string by clamper to SiC switch mosfet pipe source electrode
Upper bridge arm negative pressure spike and lower bridge arm positive pressure spike caused by disturbing；The bootstrap power supply formula SiC of inhibition bridge arm crosstalk of the invention
MOSFET driving circuit, the mode for using bootstrapping to power reduce driving power supply electricity for the power supply of half-bridge SiC MOSFET driving chip
The quantity in source reduces system cost；The bootstrap power supply formula SiC MOSFET driving circuit of inhibition bridge arm crosstalk of the invention, utilizes
Passive device generates negative pressure, can enhance the anti-interference ability of grid source electrode, inhibits switching tube caused by Miller effect to mislead, simultaneously
It can be reduced the use that negative pressure generates power supply, save the cost.
Claims (8)
1. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk, which is characterized in that including power supply
Module PM1, the power supply module PM1 be connected in turn bootstrapping power supply circuit, upper bridge arm high-speed isolated driving chip U1, on
Bridge arm SiC MOSFET driving circuit and upper bridge arm SiC switch mosfet pipe S1, the power supply module PM1 also successively connect
It is connected to lower bridge arm high-speed isolated driving chip U2, lower bridge arm SiC MOSFET driving circuit and lower bridge arm SiC switch mosfet pipe
S2, the upper bridge arm SiC switch mosfet pipe S1 connect load with the midpoint bridge arm of lower bridge arm SiC switch mosfet pipe S2,
The upper bridge arm SiC switch mosfet pipe S1 drain electrode connection half-bridge bus DC_BUS+, the lower bridge arm SiC switch mosfet
Pipe S2 source electrode connects half-bridge bus DC_BUS-；It further include having logic gate level translation circuit U T1, the logic gate level translation
Circuit U T1 is connect with upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2 respectively；
The power supply module PM1 uses B2424S chip, and the reference ground of the power supply module PM1 is GND-2；
The upper bridge arm SiC MOSFET driving circuit is identical with lower bridge arm SiC MOSFET driving circuit structure.
2. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk as described in claim 1, feature
It is, the logic gate level translation circuit U T1 uses 74LVX4245 chip, and the reference ground of the logic power is GND.
3. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk as claimed in claim 2, feature
It is, the upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2 are all made of 1EDI20N12AF
High speed magnetic isolating chip, in the upper bridge arm high-speed isolated driving chip U1 and lower bridge arm high-speed isolated driving chip U2：It is described
Pin VCC1 connection logic power, the pin GND1 are connect with GND, and the pin GND2 is connected with GND-2, the pin
IN- connection GND；
The outlet side Uo+ of the pin VCC2 connection power supply module PM1 of the lower bridge arm high-speed isolated driving chip U2, it is described
The pin VCC2 of upper bridge arm high-speed isolated driving chip U1 is connect with bootstrapping power supply circuit；The upper bridge arm high-speed isolated drives core
The output terminals A 0 of the pin IN+ connection logic gate level translation circuit U T1 of piece U1；The lower bridge arm high-speed isolated driving chip U2
Pin IN+ connection logic gate level translation circuit U T1 1 end of output terminals A.
4. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk as claimed in claim 3, feature
It is, the bootstrapping power supply circuit includes the diode DS1 being sequentially connected in series, resistance R2 and bootstrap capacitor Cb1, the diode
DS1 anode is connect with the outlet side Uo+ of power supply module PM1, the both ends the bootstrap capacitor Cb1 respectively with upper bridge arm high speed every
Pin GND2 from driving chip U1 is connected with the pin VCC2 of upper bridge arm high-speed isolated driving chip U1.
5. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk as claimed in claim 4, feature
It is, the upper bridge arm SiC MOSFET driving circuit includes negative voltage generating circuit and driving output circuit.
6. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk as claimed in claim 5, feature
It is, the negative voltage generating circuit includes zener diode ZD2, electrolytic capacitor CT1 and resistance R3, the zener diode ZD2
Cathode is connect with the source electrode of upper bridge arm SiC switch mosfet pipe S1, and the zener diode ZD2 anode is connect with GND-2, institute
Electrolytic capacitor CT1 is stated to be connected in parallel on zener diode ZD2, the one end the resistance R3 be connected to resistance R2 and bootstrap capacitor Cb1 it
Between node on, the resistance R3 other end is connect with electrolytic capacitor CT1, formed charge circuit.
7. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk as claimed in claim 6, feature
It is, the driving output circuit includes triode Q1, gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode
ZD1, the triode Q1 base stage are connect by resistance R5 with the OUT- of upper bridge arm high-speed isolated driving chip U1, the triode
Q1 emitting stage is connected with lower bridge arm SiC switch mosfet pipe S2 grid, and the triode Q1 collector accesses upper bridge arm SiC
The source electrode of switch mosfet pipe S1；The gate pole bleed-off circuit resistance R4, low value capacitance C3 and zener diode ZD1 are in parallel respectively
Between the grid and source electrode of upper bridge arm SiC switch mosfet pipe S1.
8. a kind of bootstrap power supply formula SiC MOSFET driving circuit for inhibiting bridge arm crosstalk as claimed in claim 5, feature
It is, the upper bridge arm SiC switch mosfet pipe S1 grid is also connected with open resistance Rg1 and turns off resistance Rg2, described to open
The resistance Rg1 other end that is powered connects the pin OUT+ of upper bridge arm high-speed isolated driving chip U1, described shutdown one end resistance Rg2 with it is upper
The pin OUT- connection of bridge arm high-speed isolated driving chip U1, the shutdown resistance Rg2 other end are connected to bridge arm SiC
Between switch mosfet pipe S1 grid and open resistance Rg1.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810797124.5A CN108880206B (en) | 2018-07-19 | 2018-07-19 | Bootstrap power supply type SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit for inhibiting bridge arm crosstalk |
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| CN201810797124.5A CN108880206B (en) | 2018-07-19 | 2018-07-19 | Bootstrap power supply type SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit for inhibiting bridge arm crosstalk |
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| CN108880206A true CN108880206A (en) | 2018-11-23 |
| CN108880206B CN108880206B (en) | 2020-03-27 |
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| CN201810797124.5A Expired - Fee Related CN108880206B (en) | 2018-07-19 | 2018-07-19 | Bootstrap power supply type SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit for inhibiting bridge arm crosstalk |
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